CN205105135U

CN205105135U - Brushless DC motor driver topological structure

Info

Publication number: CN205105135U
Application number: CN201520498861.7U
Authority: CN
Inventors: 何健; 魏佳丹; 周勇
Original assignee: Jiangsu Triumphant Electric Science And Technology Ltd Of Unit
Current assignee: Wuxi Yidong Electronics Co., Ltd.
Priority date: 2015-07-13
Filing date: 2015-07-13
Publication date: 2016-03-23
Anticipated expiration: 2025-07-13

Abstract

The utility model relates to a brushless DC motor drive control technical field specifically is a brushless DC motor driver topological structure, and its requirement that can satisfy current high voltage, high speed, high -efficient operation motor drive system improves operating efficiency, and is with low costs, and it includes brushless DC motor, brushless DC motor connects through the drive converter, a serial communication port, the power transistor of a bridge arm of drive converter is MOSFET, another power transistor is three IGBT.

Description

Brushless direct current motor driver topological structure

Technical field

The utility model relates to brshless DC motor Drive Control Technique field, is specially a kind of brushless direct current motor driver topological structure.

Background technology

Along with the maturation gradually of the technology of rare-earth permanent-magnet electric machine, brshless DC motor is simple as a kind of structure, control technology is ripe, and the brushless structure motor that operational efficiency is higher, start gradually to become and drive application to substitute traditional to have brushless motor, asynchronous machines etc. drive the high-efficiency motor of the occasion of application, especially require higher at some rotation speed requirements, and the application scenario that power supply voltage is higher, as industrial drives application, aviation high-speed electric expreess locomotive drives occasion, traditional brushless motor that has is difficult to meet high-speed applications, although Induction Motor-Driven system associative transformation device can realize effective drived control, but in high-speed applications, the control system of high rotating speed to frequency converter proposes strict requirement, Vector Control System of Induction Motor, direct torque control due to complexity higher, high-speed applications is caused to be difficult to obtain good driving effect.

Brshless DC motor is simple as a kind of structure, control mode, and the permanent-magnet structure form motor that operational efficiency is high, along with tending towards stability gradually of rare-earth permanent magnet price, it is efficient, reliably operation characteristic be especially applicable to at a high speed, high-voltage operation occasion.But, traditional high speed, high-voltage operation occasion, usual employing IGBT topology formation converter topology, to tolerate the high working voltage requirement of system, but the restriction of the intrinsic switching frequency of high pressure IGBT, make brshless DC motor in high-speed applications, due to the restriction of switching frequency, cause closed-loop current control to be difficult to reach required effect, directly make its Driving Torque pulse comparatively large, affect output characteristic, adopting MOSFET to substitute IGBT, to there is the Costco Wholesale of high-voltage MOSFET higher, and the problem that the choice of device is less, although MOSFET can by the raising of switching frequency, effective control current of electric, improve motor and drive effect, but because the reverse recovery characteristic of MOSFET body diode is poor, brshless DC motor needs to carry out afterflow by this diode, because its Reverse recovery speed ratio is lower, QRR is also larger, the switching loss of diode is not only caused to increase, the efficiency of reduction system, also due to voltage spikes can be produced in reversely restoring process, affect the trouble free service of power MOSFET, therefore demands such as meeting afterflow process rapidity is generally in the converter applications brshless DC motor driving process that MOSFET is formed, need on the basis of MOSFET, the fast recovery diode of Same Efficieney grade in parallel, or increase extra device and carry out the switching of freewheel current and the absorbing circuit of consequent due to voltage spikes, these all make the complexity of system converter increase, and add the volume of system, weight and cost.

The patent No. is that the patent " DC-to-AC converter and cycle refrigerating plant " of ZL200680027846.8 gives a kind of motor driving transducer topology by IGBT and MOSFET combination, circuit is applied by being equipped with extra reverse voltage to MOSFET, to suppress to produce reverse current in a mosfet in turn-on logic handoff procedure in motor driven systems, its object is to the combination by IGBT and MOSFET, under low carrier strip part, utilize the low loss characteristic of MOSFET, the operational efficiency of raising system, under high loading conditions, increase the ON time ratio of IGBT, with the loss of balance power device, target makes the converter be made up of IGBT and MOSFET, loss is minimum in various load conditions, to seek the raising of system effectiveness.Namely this patent utilizes the differential loss of MOSFET and IGBT under Switching Condition, combination forms motor driving transducer topology, the loss characteristic that circuit reduces MOSFET is applied by increasing reverse voltage, and in conjunction with the ON time of IGBT and MOSFET, the loss of balance converter, to improve the operational efficiency of changer system.Although patent also relates to the drive system of brshless DC motor, but the turn-on logic that the control mode of converter is not intrinsic with brshless DC motor, afterflow characteristic is associated, and do not consider MOSFET, the property difference of parasitic diode in IGBT device, wherein the characteristic of the body diode of MOSFET is poor, there is obvious reverse recovery characteristic problem, the converter causing it to form at pipe in switching process, because the afterflow characteristic of brshless DC motor exists obvious due to voltage spikes, especially in high voltage applications occasion, MOSFET is existed to the danger of voltage breakdown, and the body diode of IGBT is generally fast recovery diode, in brshless DC motor afterflow process, there is good switching characteristic, under but the restriction of the switching frequency that IGBT exists makes again it be difficult to meet high-speed cruising condition, the Current Control demand of brshless DC motor.

Summary of the invention

In order to solve the problem, the utility model provides a kind of brushless direct current motor driver topological structure, its can meet current high voltage, at a high speed, the requirement of Effec-tive Function motor driven systems, improve operational efficiency, cost is low.

Its technical scheme is such: a kind of brushless direct current motor driver topological structure, it comprises brshless DC motor, described brshless DC motor connects power supply by driving transducer, it is characterized in that, a power transistor of a brachium pontis of described driving transducer is MOSFET, another power transistor is IGBT.

It is further characterized in that, the upper arm power transistor of described brachium pontis is three MOSFET, underarm power transistor is three IGBT, the three-phase bridge topological structure of pipe IGBT under pipe MOSFET in formation;

The upper arm power transistor of described brachium pontis is three IGBT, underarm power transistor is the three-phase bridge topological structure that three MOSFET form pipe MOSFET under pipe IGBT;

After adopting topological structure of the present utility model, the power transistor adopting an arm is MOSFET, another power transistor is the three-phase bridge inverter topological structure of IGBT, without the need to increasing extra device, make structure compacter, MOSFET element and IGBT device jointly coordinate and realize making driving transducer can either meet the high switching frequency requirement of high-speed applications Current Control demand, system cost is increased again without the need to increasing extra power device, and adopt suitable on-off mode to improve the operational efficiency of BLDCM Drive System, meet current high voltage, at a high speed, the requirement of Effec-tive Function motor driven systems.

Accompanying drawing explanation

The three-phase bridge topological structure of pipe IGBT under pipe MOSFET on Fig. 1;

The three-phase bridge topological structure of pipe MOSFET under pipe IGBT on Fig. 2;

On Fig. 3, under pipe MOSFET, the three-phase bridge topological structure PWM-ON of pipe IGBT opens pattern diagram;

The three-phase bridge topological structure PWM-ON freewheeling mode schematic diagram of pipe IGBT under pipe MOSFET on Fig. 4;

On Fig. 5, under pipe IGBT, the three-phase bridge topological structure PWM-ON of pipe MOSFET opens pattern diagram;

The three-phase bridge topological structure PWM-ON freewheeling mode schematic diagram of pipe MOSFET under pipe IGBT on Fig. 6.

Embodiment

As shown in Figure 1, upper arm power transistor is three MOSFET, underarm power transistor is the three-phase bridge topological structure that three IGBT form pipe IGBT under pipe MOSFET, three MOSFET are respectively transistor T1, transistor T3, transistor T5, three IGBT correspondences are respectively transistor T4, transistor T6, transistor T2, in figure, diode is its body diode carried, the transistor T1 of upper arm, transistor T3, transistor T5 works in copped wave state, the transistor T1 of underarm, transistor T3, transistor T5 works in normal open state according to the commutation logic of brshless DC motor, in switch periods, the MOSFET of upper arm carries out afterflow by the parasitic fast recovery diode of the IGBT of underarm when turning off, freewheel current does not flow through the MOSEFT of upper arm, therefore the MOSFET of upper arm is without the need to extra fast recovery diode device in parallel, driving transducer topological structure is comparatively simple.

As shown in Figure 2, upper arm power transistor is three IGBT, underarm power transistor is the three-phase bridge topological structure that three MOSFET form pipe MOSFET under pipe IGBT, now three IGBT are respectively transistor T1, transistor T3, transistor T5, and its parasitic diode, three MOSFET correspondences are respectively transistor T4, transistor T6, transistor T2, in figure, diode is its body diode carried, now the IGBT of upper arm works in normal open state according to the commutation logic of brshless DC motor, the MOSFET of underarm works in copped wave state, in switch periods, the MOSEFT of underarm turns off, afterflow is carried out by the parasitic diode of upper arm IGBT, freewheel current does not flow through the MOSEFT of underarm, therefore the MOSFET of underarm is also without the need to fast recovery diode in parallel, similarly, driving transducer topological structure is also comparatively simple.

Under the above pipe MOSFET of the concrete implementation step of brushless direct current motor driver topology merging method, the PWM-ON control model of the three-phase bridge topological structure of pipe IGBT is that example illustrates:

Fig. 3 for shown in, what adopt PWM-ON control model opens pattern,---T5, T6---T4, T5---T3, T4---T2, T3---T1, T2---T1, T6 according to commutation conduction mode T1, T6 of brshless DC motor ... it is now T1, T6 conduction mode, transistor T1 works in high-frequency PWM pattern, utilize the HF switch characteristic of MOSFET, effectively can improve the chopping frequency of PWM, under making high-speed cruising condition, enough on-off times are possessed, to realize the effective control to winding current in a current cycle.Such as two to pole motor, under 12000r/min condition, current cycle is 400Hz, adopt traditional IGBT device, be limited to the switching frequency of its 20kHz, under this rotating speed, for brshless DC motor, in its one-period, current chopping number of times mostly is 50 times most, corresponding half period electric current copped wave number of times is about 16 times, comparatively significantly ripple will be there is in phase current, and along with rotating speed continues to rise, as under 24000r/min condition, winding current only copped wave about 8 times in half period of brshless DC motor, be difficult to realize the effective control to machine winding current, obvious current ripples will be caused, motor is exported and there is the pulsation of obvious steady state torque, affect the drive characteristic under its high-speed cruising condition.

As shown in Figure 4, adopt the shutdown mode under PWM-ON control mode, transistor T1 turns off, transistor T6 continues conducting, brshless DC motor winding current carries out afterflow by the parasitic diode of the transistor T4 of the A phase brachium pontis of converter, this parasitic diode effectively can reduce the due to voltage spikes owing to causing due to the reverse recovery characteristic of lower tube body diode when not existing and adopt MOSFET in commutation process, and without the need to the anti-also diode that parallel connection is extra, make the topological structure of driving transducer comparatively compact.

Under upper pipe MOSFET pipe IGBT three-phase bridge topology in, transistor T1 adopts PWM control mode, due to the switching frequency characteristics of MOSFET self, its HF switch process breaker in middle loss is relatively low, and transistor T6 works in normal open state, there is not switching loss, the IGBT loss under normal open state is also lower, namely this converter topology opens in conjunction with PWM-ON the loss that mode effectively can reduce converter, realizes the high efficiency drive operation that brshless DC motor drives.In the MOSFET chopping process of upper arm, in T1, T6 conduction mode, transistor T1 closes and has no progeny, the parasitic diode afterflow of transistor T4, when transistor T1 opens again, the parasitic diode freewheel current change of current of transistor T4, because this diode possesses fast recovery characteristics, reverse current value is very little, makes the voltage spikes of transistor T4 very little, can adapt to high voltage occasion.If but underarm is MOSFET, because its body diode reverse is long for recovery time, recovery charge is larger, to cause now for the MOSFET at transistor T4 place produces obvious due to voltage spikes, limit the application in high voltage occasion, therefore by the composite type topology of MOSFET and IGBT, effectively can solve high tension voltage spike Problems existing, adapt to the demand of high voltage applications occasion.

In correspondence under pipe IGBT the three-phase bridge topology of pipe MOSFET in conjunction with ON-PWM conduction mode, the similar MOSFET to underarm adopts PWM control mode, the IGBT of upper arm carries out open-minded according to turn-on logic, as Fig. 5, shown in Fig. 6, also can realize the high speed of brshless DC motor under high voltage condition, Effec-tive Function.

Claims

1. a brushless direct current motor driver topological structure, it comprises brshless DC motor, described brshless DC motor connects power supply by driving transducer, it is characterized in that, a power transistor of a brachium pontis of described driving transducer is MOSFET, another power transistor is IGBT.

2. a kind of brushless direct current motor driver topological structure according to claim 1, it is characterized in that, the upper arm power transistor of described brachium pontis is three MOSFET, underarm power transistor is three IGBT, the three-phase bridge topological structure of pipe IGBT under pipe MOSFET in formation.

3. a kind of brushless direct current motor driver topological structure according to claim 1, it is characterized in that, the upper arm power transistor of described brachium pontis is three IGBT, underarm power transistor is the three-phase bridge topological structure that three MOSFET form pipe MOSFET under pipe IGBT.