CN204680434U - Integral type dry type insulating tube type busbar - Google Patents

Abstract

The utility model belongs to the technical field of a tubular busbar and a manufacturing method thereof, and discloses an integrated dry insulating tubular busbar. Its main technical features are: it includes a hollow conductive tube, and the first insulating layer, the first shielding layer, the second insulating layer, the second shielding layer, the third insulating layer, and the third shielding layer are sequentially wound on the outside of the hollow conductive tube , the fourth insulating layer, and the fourth shielding layer. The polytetrafluoroethylene material has good insulating properties, and the semiconductor polytetrafluoroethylene film containing carbon powder has the performance of a conductive shielding layer. The above polytetrafluoroethylene film and the semiconductive polytetrafluoroethylene film containing carbon powder The spacer is used as an insulating layer and a shielding layer, and is sintered at high temperature to form an integrated structure. It has large carrying capacity, low skin effect, small power loss, large allowable strain force, high mechanical strength, good heat dissipation conditions, low temperature rise and strong weather resistance , Completely maintenance-free, corrosion-resistant advantages.

Description

Integral dry insulated tubular busbar

technical field

The utility model belongs to the technical field of tubular busbars and manufacturing methods thereof, in particular to an integrated dry insulating tubular busbar.

Background technique

In power engineering, the conductor connection between the power grid transmission wire and the substation transformer, the jumper wire in the transmission line, the connecting conductor in the power equipment and the overcurrent conductor in the high-current DC ice-melting device all use tubular busbars. For substations, substations for subways or substations with special requirements, in order to reduce the floor area and make the substations more compact, it is required that the insulation performance and corrosion resistance of tubular busbars be greatly improved.

The currently used tubular busbars include oil-filled polytetrafluoroethylene tape-wrapped fully insulated busbars and dry-type integrated dry-insulated tubular busbars. Due to structural reasons, there are the following defects: First, oil-filled polytetrafluoroethylene Fluoroethylene tape wraps fully insulated busbars, because the PTFE tape is very smooth, it cannot achieve the purpose of complete fixation. In the process of production, transportation, installation and operation, it is inevitable that the polytetrafluoroethylene tape and the shielding layer move along the axis of the busbar, resulting in uneven distribution of the electric field and deterioration; , epoxy resin is used as the insulating layer, and there is a shielding layer between the insulating layers. Due to the material, the busbar has a long processing cycle and poor control of the process. During the drying process, the epoxy resin is easy to crack and the yield is low. , The insulating layer and the shielding layer are easy to separate due to loose combination, which reduces the performance of the product and shortens the service life of the product.

Utility model content

The technical problem to be solved by the utility model is to provide a kind of weather-resisting machine with short processing cycle, large carrying capacity, low skin effect, small power loss, large allowable strain force, high mechanical strength, good heat dissipation conditions, and low temperature rise. Permanent, completely maintenance-free, corrosion-resistant one-piece dry-type insulated tubular busbar.

In order to solve the above-mentioned technical problems, the technical solution adopted by the utility model is: comprising a hollow conductive tube, characterized in that: a polytetrafluoroethylene film is wound on the outside of the hollow conductive tube to form a first insulating layer; A semiconductor polytetrafluoroethylene film containing carbon powder is wound outside the layer to form a first shielding layer; a polytetrafluoroethylene film is wound outside the first shielding layer to form a second insulating layer, and a polytetrafluoroethylene film containing The semiconductor polytetrafluoroethylene film with carbon powder forms the second shielding layer; the polytetrafluoroethylene film is wound outside the second shielding layer to form the third insulating layer, and the polytetrafluoroethylene film containing carbon powder is wound outside the third insulating layer The semiconductor polytetrafluoroethylene film forms the third shielding layer; the polytetrafluoroethylene film is wound outside the third shielding layer to form the fourth insulating layer, and the semiconducting polytetrafluoroethylene film containing carbon powder is wound outside the fourth insulating layer Vinyl film constitutes the fourth shielding layer.

Its additional technical features are:

Winding a polytetrafluoroethylene film outside the fourth shielding layer to form a fifth insulating layer, and winding a semiconductor polytetrafluoroethylene film containing carbon powder outside the fifth insulating layer to form a fifth shielding layer;

A sheath layer is provided outside the fifth shielding layer;

The thickness of the polytetrafluoroethylene film is 0.05-0.15mm, and the width is 25-55mm; the thickness of the semiconductor polytetrafluoroethylene film is 0.05-0.15mm, and the width is 25-55mm; the first insulation layer, the second insulating layer, the third insulating layer and the fourth insulating layer are composed of four layers of polytetrafluoroethylene film, and the fifth insulating layer is composed of three layers of polytetrafluoroethylene film; the first shielding layer, the second shielding layer The second shielding layer, the third shielding layer and the fourth shielding layer are one layer of semiconducting polytetrafluoroethylene film, and the fifth shielding layer is two layers of semiconducting polytetrafluoroethylene film;

The first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer, the first shielding layer, the second shielding layer, the third shielding layer and the fourth shielding layer have a helix angle of 30-45 degrees Wrapping with half-fold bag;

A semiconductor polytetrafluoroethylene film containing carbon powder is arranged between the first insulating layer and the hollow conductive tube to form a uniform electric field layer.

Compared with the prior art, the integrated dry-type insulated tubular bus provided by the utility model has the following advantages: First, because it includes a hollow conductive tube, the polytetrafluoroethylene film is wound outside the hollow conductive tube to form the second An insulating layer, a semiconductor polytetrafluoroethylene film containing carbon powder is wound outside the first insulating layer to form a first shielding layer; a polytetrafluoroethylene film is wound outside the first shielding layer to form a second insulating layer, A semiconductive polytetrafluoroethylene film containing carbon powder is wound outside the second insulating layer to form a second shielding layer; a polytetrafluoroethylene film is wound outside the second shielding layer to form a third insulating layer. A semiconductor polytetrafluoroethylene film containing carbon powder is wound outside the three insulating layers to form a third shielding layer; a polytetrafluoroethylene film is wound outside the third shielding layer to form a fourth insulating layer, and outside the fourth insulating layer The fourth shielding layer is formed by winding the semiconducting polytetrafluoroethylene film containing carbon powder; the polytetrafluoroethylene material has good insulating properties, and the semiconducting polytetrafluoroethylene film containing carbon powder has conductive shielding properties. The above-mentioned polytetrafluoroethylene film and the semiconductor polytetrafluoroethylene film containing carbon powder are used as insulating layer and shielding layer, and are sintered at high temperature to form an integrated structure, which has large current carrying capacity, low skin effect, small power loss, and allowable strain large, high mechanical strength, good heat dissipation conditions, low temperature rise, strong weather resistance, complete maintenance-free, and corrosion resistance; second, because the fourth shielding layer is wound outside the fourth shielding layer to form the fifth Insulation layer, the semiconductor polytetrafluoroethylene film that contains carbon powder is wrapped around the outside of the fifth insulation layer to form the fifth shielding layer, which further improves the electrical performance of the busbar for some busbars with larger currents; thirdly, due to the There is a sheath layer on the outside of the fifth shielding layer, which prolongs the service life of the product; Fourth, because the thickness of the polytetrafluoroethylene film is 0.05-0.15mm and the width is 25-55mm; The thickness of the tetrafluoroethylene film is 0.05-0.15mm, and the width is 25-55mm; the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer are composed of four layers of polytetrafluoroethylene film, The fifth insulating layer is composed of three layers of polytetrafluoroethylene film; the first shielding layer, the second shielding layer, the third shielding layer and the fourth shielding layer are a layer of semiconductor polytetrafluoroethylene film, and the first The fifth shielding layer is two layers of semiconductor polytetrafluoroethylene film, which can not only ensure the thickness and insulation performance of the insulating layer, but also ensure the shielding performance of the shielding layer; five, due to the first insulating layer, the second insulating layer, The third insulating layer and the fourth insulating layer, the first shielding layer, the second shielding layer, the third shielding layer and the fourth shielding layer are wrapped with a helix angle of 30-45 degrees and half folded; the resulting product is more flat, Sixth, since the semiconductor polytetrafluoroethylene film containing carbon powder is arranged between the first insulating layer and the hollow conductive tube to form a uniform electric field layer, the surface of the conductor is smoother, the electric field is evenly distributed, and arcs are not easily generated.

The manufacturing method of the integrated dry insulating tubular busbar described in the utility model has the following characteristics:

First, the process is simple and the production cycle is short. It only needs to wind the insulating layer and the shielding layer on the hollow conductive tube in turn, and then sinter in the sintering furnace. Compared with the current resin used as an insulating layer, the production cycle is greatly shortened.

Second, use polytetrafluoroethylene film as the insulating layer, and use semiconductor polytetrafluoroethylene film with carbon powder. Since they all contain polytetrafluoroethylene materials, they can be sintered into an integrated structure during high-temperature sintering, making this method produce The integrated dry-type insulated tubular bus has large carrying capacity, low skin effect, small power loss, large allowable strain force, high mechanical strength, good heat dissipation conditions, low temperature rise, strong weather resistance, completely maintenance-free, The advantage of corrosion resistance.

Description of drawings

Fig. 1 is the structural schematic diagram of the cross-section of the utility model integrated dry-type insulated tubular bus bar;

Fig. 2 is a structural schematic diagram of a cross-section of an integrated dry-type insulating tubular busbar with a fifth insulating layer, a fifth shielding layer and a protective sleeve on the outside;

Fig. 3 is a structural schematic diagram of a cross-section of an integrated dry-type insulated tubular bus bar with a uniform electric field layer on the outside of the hollow conductive tube.

Detailed ways

The structure and operating principle of the integrated dry-type insulated tubular busbar of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

As shown in Figure 1, the integrated dry-type insulated tubular busbar of the utility model includes a hollow conductive tube 1, which is generally a copper tube or an aluminum tube, and a polytetrafluoroethylene film is wound on the outside of the hollow conductive tube 1 to form the second An insulating layer 2, a semiconducting polytetrafluoroethylene film containing carbon powder is wound on the outside of the first insulating layer 2 to form a first shielding layer 3; a polytetrafluoroethylene film is wound on the outside of the first shielding layer 3 to form a second insulating layer 4. Wrap a semiconductor polytetrafluoroethylene film containing carbon powder outside the second insulating layer 4 to form the second shielding layer 5; wrap the polytetrafluoroethylene film outside the second shielding layer 5 to form the third insulating layer 6. The third shielding layer 7 is formed by winding the semiconductor polytetrafluoroethylene film that contains carbon powder on the outside of the three insulating layers 6; the fourth insulating layer 8 is formed by winding the polytetrafluoroethylene film on the outside of the third shielding layer 7; A semiconductor polytetrafluoroethylene film containing carbon powder is wound outside to form the fourth shielding layer 9 . The semiconductor polytetrafluoroethylene film includes the following components by weight: polytetrafluoroethylene: 100 parts; carbon powder 3-10 parts, the polytetrafluoroethylene material has good insulation properties, and the semiconductive polytetrafluoroethylene containing carbon powder The fluoroethylene film also has the performance of a conductive shielding layer. The above-mentioned polytetrafluoroethylene film and the semiconducting polytetrafluoroethylene film containing carbon powder are used as the insulating layer and the shielding layer, and are sintered at high temperature to form an integrated structure. It has a large carrying capacity, It has the advantages of low skin effect, small power loss, large allowable strain force, high mechanical strength, good heat dissipation conditions, and low temperature rise. The insulating material has the characteristics of high heat resistance coefficient, easy installation and strong anti-vibration ability.

As shown in Figure 2, a polytetrafluoroethylene film is wound outside the fourth shielding layer 9 to form the fifth insulating layer 10, and a semiconductor polytetrafluoroethylene film containing carbon powder is wound outside the fifth insulating layer 10 to form the fifth shielding layer 11. For some buses with large current, the electrical performance of the bus is further improved.

There is a sheath layer 13 on the outside of the fifth shielding layer 11, and the sheath layer 13 includes the following components by weight: 100 parts of polytetrafluoroethylene, 3-10 parts of red, green and blue organic pigments, which prolongs the service life of the product , but also facilitates the distinction of phase lines.

The thickness of the polytetrafluoroethylene film is 0.05-0.15mm, and the width is 25-55mm; the thickness of the semiconductor polytetrafluoroethylene film is 0.05-0.15mm, and the width is 25-55mm; the first insulating layer 2, the second insulating layer Layer 4, the third insulating layer 6 and the fourth insulating layer 8 are composed of four layers of polytetrafluoroethylene film, the fifth insulating layer 10 is composed of three layers of polytetrafluoroethylene film; the first shielding layer 3, the second shielding layer 5 , the third shielding layer 7 and the fourth shielding layer 9 are one layer of semiconducting polytetrafluoroethylene film, and the fifth shielding layer 11 is two layers of semiconducting polytetrafluoroethylene film, which can not only ensure the thickness and insulation performance of the insulating layer, but also The shielding performance of the shielding layer is guaranteed. Of course, the first insulating layer 2, the second insulating layer 4, the third insulating layer 6 and the fourth insulating layer 8 may be composed of two, three, five or more layers of polytetrafluoroethylene films as required, The fifth insulating layer 10 can be made of two layers, four layers or more layers of polytetrafluoroethylene film; the first shielding layer 3, the second shielding layer 5, the third shielding layer 7 and the fourth shielding layer 9 can be two One or more layers of semiconducting polytetrafluoroethylene films, the fifth shielding layer 11 can be more than two layers of semiconducting polytetrafluoroethylene films.

The first insulating layer 2, the second insulating layer 4, the third insulating layer 6 and the fourth insulating layer 8, the first shielding layer 3, the second shielding layer 5, the third shielding layer 7 and the fourth shielding layer 9 are spiral angles 30-degree half-fold wrapping; the resulting product is more flat.

As shown in Figure 3, between the first insulating layer 2 and the hollow conductive tube 1, a semiconductor polytetrafluoroethylene film containing carbon powder is arranged to form a uniform electric field layer 12, the surface of the conductor is smoother, the electric field is evenly distributed, and arcs are not easy to occur .

The scope of protection of the utility model is not limited to the above-mentioned embodiments, as long as the structure is the same as that of the integrated dry-type insulated tubular busbar of the utility model, it falls within the scope of protection of the utility model.

Claims (6)

1. An integrated dry-type insulated tubular busbar, including a hollow conductive tube, characterized in that a polytetrafluoroethylene film is wound on the outside of the hollow conductive tube to form a first insulating layer, and a polytetrafluoroethylene film is wound on the outside of the first insulating layer. The semiconductor polytetrafluoroethylene film with carbon powder forms the first shielding layer; the polytetrafluoroethylene film is wound outside the first shielding layer to form the second insulating layer, and the carbon powder is wound outside the second insulating layer. The semiconductor polytetrafluoroethylene film forms the second shielding layer; the polytetrafluoroethylene film is wound outside the second shielding layer to form a third insulating layer, and the semiconducting polytetrafluoroethylene film containing carbon powder is wound outside the third insulating layer The vinyl film forms the third shielding layer; the polytetrafluoroethylene film is wound outside the third shielding layer to form the fourth insulating layer, and the semiconductor polytetrafluoroethylene film containing carbon powder is wound outside the fourth insulating layer to form the fourth insulating layer. Four shielding layers. 2. The integrated dry-type insulated tubular busbar according to claim 1, characterized in that: a polytetrafluoroethylene film is wound outside the fourth shielding layer to form a fifth insulating layer, and outside the fifth insulating layer A fifth shielding layer is formed by winding a semiconductive polytetrafluoroethylene film containing carbon powder. 3. The integrated dry-type insulated tubular busbar according to claim 2, characterized in that: a sheath layer is provided outside the fifth shielding layer. 4. The integrated dry-type insulated tubular busbar according to claim 2, characterized in that: the thickness of the polytetrafluoroethylene film is 0.05-0.15mm, and the width is 25-55mm; the semiconductor polytetrafluoroethylene The thickness of the vinyl film is 0.05-0.15mm, and the width is 25-55mm; the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer are composed of four layers of polytetrafluoroethylene film, and the The fifth insulating layer is composed of three layers of polytetrafluoroethylene film; the first shielding layer, the second shielding layer, the third shielding layer and the fourth shielding layer are a layer of semiconductor polytetrafluoroethylene film, and the fifth shielding layer The layer is two layers of semiconducting polytetrafluoroethylene film. 5. The integrated dry-type insulated tubular busbar according to claim 1, characterized in that: a semiconductor polytetrafluoroethylene film containing carbon powder is arranged between the first insulating layer and the hollow conductive tube Form a uniform electric field layer. 6. The integrated dry-type insulated tubular busbar according to claim 1, characterized in that: the first insulating layer, the second insulating layer, the third insulating layer and the fourth insulating layer, the first shielding layer , The second shielding layer, the third shielding layer and the fourth shielding layer are wrapped by a half-folded package with a helix angle of 30-45 degrees.