CN204625834U - Reaction tubes and adopt the silicon core growth furnace of this reaction tubes - Google Patents

Abstract

The utility model proposes a reaction tube for setting in a silicon core growth furnace. The reaction tube is a silicon nitride tube, which includes a first tube body, an end part arranged at the top of the tube body and a The second pipe body at the bottom end of the first pipe body, the end is connected to the top of the first pipe body, and is a funnel-shaped structure, there is at least one second pipe body, and each second pipe body has two ports A convex portion and a concave portion that cooperate with each other are formed respectively. In the reaction tube of the present invention, due to the setting of its end, the placed silicon material is also arranged in the end in addition to being filled with the inside of the tube. The silicon material melts into a liquid in the tube and becomes smaller in volume. The silicon material in the end Make up in the tube body, and finally make the silicon material melted into liquid completely in the tube body, so as to prevent the shortage of silicon material in the tube body and affect the product.

Description

Reaction tube and silicon core growth furnace using the reaction tube

technical field

The utility model relates to the industrial technical field of silicon material production, in particular to a reaction tube and a silicon core growth furnace using the reaction tube.

Background technique

Polysilicon is the raw material for the preparation of semiconductor devices and solar cells, and is the cornerstone of the global electronics industry and photovoltaic industry. At present, the preparation of polysilicon mainly uses chemical vapor deposition technology, adopts reaction tube, uses silicon core as heating element and silicon deposition carrier, uses trichlorosilane as reaction gas, and hydrogen as reducing gas. After the silicon core rises to a certain temperature, Trichlorosilane reacts with hydrogen to generate silicon on the surface of the silicon core and deposits on the surface of the silicon core to finally obtain the desired polysilicon. However, the existing reaction tube is usually a straight cylindrical tube body, and since the volume of the silicon material becomes smaller after melting, the silicon material is often insufficient to affect the product quality.

Utility model content

The utility model provides a reaction tube and a silicon core growth furnace adopting the reaction tube, which solves the problem of insufficient silicon material in the prior art.

The technical scheme of the utility model is achieved in that:

A reaction tube for setting in a silicon core growth furnace, the reaction tube is a silicon nitride tube, which includes a first tube body, an end part arranged at the top of the tube body and a bottom part of the first tube body The second pipe body at the end, the end is connected to the top of the first pipe body, and is a funnel-shaped structure, the second pipe body is at least one, and the two ports of each second pipe body form a mutually matched Convex and concave.

Preferably, a layer of silicon nitride coating can also be provided in the reaction tube.

A preferred solution is that the inner diameter of the end gradually decreases from the top end to the bottom end, and the inner diameter of the bottom end is the same as the inner diameter of the tube body, and the inner diameter of the tube body is equal from top to bottom.

A silicon core growth furnace, comprising a base, a holding furnace arranged on the base, and a reaction tube arranged in the holding furnace, the holding furnace is respectively provided with an air inlet and an air outlet, and the reaction tube includes a tube body And the end portion arranged at the top of the pipe body, the bottom of the pipe body is in a closed state, and the top is in an open state, and the end portion is connected to the top of the pipe body and has a funnel-shaped structure.

The preferred solution is that the lining board, the first limiting plate and the second limiting plate are arranged in sequence from bottom to top in the holding furnace, and the first limiting plate and the second limiting plate are respectively provided with a number of limiting plates. Positioning holes, the reaction tubes are sequentially set in the limiting holes of the first limiting plate and the second limiting plate, and make their bottom ends lean against the lining plate.

A preferred solution is that the inner wall of the holding furnace is vertically arranged with a plurality of heating elements independent of each other.

The beneficial effects of the utility model are:

In the reaction tube of the utility model, due to the setting of its end, the placed silicon material is also arranged in the end in addition to being filled with the inside of the tube. The silicon material melts into a liquid in the tube and becomes smaller in volume. The silicon in the end The material is filled in the tube body, and finally the silicon material melted into liquid is completely in the tube body, so as to prevent the shortage of silicon material in the tube and affect the product.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description These are only some embodiments of the utility model, and those skilled in the art can also obtain other drawings based on these drawings without creative work.

Fig. 1 is the sectional view of reaction tube of the present utility model;

Fig. 2 is a cross-sectional view of the silicon core growth furnace provided with the reaction tube shown in Fig. 1 .

In the picture:

10. Reaction tube; 11. First tube body; 13. End; 15. Second tube body; 110. Card slot; 20. Silicon core growth furnace; 21. Base; 22. Holding furnace; 23. Lining plate; 24, the first limiting plate; 25, the second limiting plate; 26, the air inlet; 27, the air outlet; 28, the heating element; 29, the limiting hole.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. example. Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model.

As shown in Figure 1, the reaction tube 10 is used to be arranged in a silicon core growth furnace 20, and includes a first tube body 11, an end portion 13 arranged at the top of the first tube body 11 and a 11 the second pipe body 15 of bottom end. The reaction tube 10 is a silicon nitride tube.

The cross-section of the first pipe body 11 is "U"-shaped, and its top is open. The inner diameter of the first pipe body 11 is equal from top to bottom. An engaging groove 110 is formed on the outer peripheral surface of the bottom end of the first tube body 11 .

The end portion 13 is connected to the top of the first pipe body 11 and is integrated with the first pipe body 11 . The end portion 13 is a funnel-shaped structure, that is, the inner diameter of the end portion 13 gradually decreases from the top end to the bottom end, and the inner diameter of the bottom end is the same as the inner diameter of the first pipe body 11 .

The second pipe body 15 is located at the bottom end of the first pipe body 11 and is fixedly connected with the first pipe body 11 . The second tube body 15 can be one, two or more, which can be determined according to the length of the specific reaction tube 10 to be manufactured. The two ports of each second tube body 15 respectively form a protruding part 150 and a concave part 151 that cooperate with each other, so as to realize the mutual connection between the second tube bodies 15 .

A layer of silicon nitride coating can also be provided inside the reaction tube 10 to facilitate subsequent separation of the reaction tube 10 from the silicon core.

In the process of preparing the silicon core, silicon material needs to be placed in the reaction tube 10. The placed silicon material is not only filled inside and outside the tube body 11, but also placed in the end 13. When the reaction tube 10 reacts in the silicon core growth furnace 20 , the silicon material melts into a liquid in the reaction tube 10 and the volume becomes smaller, and the silicon material in the end 13 is filled in the tube body 11, and finally the silicon material melted into a liquid state is completely in the tube body 11, thereby preventing the reaction tube Insufficient silicon material in 10 affects the product.

As shown in Figure 2, the silicon core growth furnace 20 includes a base 21, a holding furnace 22 arranged on the base 21, a lining plate 23 arranged in the holding furnace 22, a first limiting plate 24, a second limiting plate The plate 25 and the reaction tubes 10 disposed on the first limiting plate 24 and the second limiting plate 25 .

The holding furnace 22 is a hollow cavity structure made of an insulating layer, an air inlet 26 is arranged on the top, and an air outlet 27 is arranged on the side wall near the bottom. The inner wall of the holding furnace 22 is vertically provided with a plurality of heating elements 28 arranged and independent from each other. The liner 23 is horizontally arranged at the bottom of the holding furnace 22 . The first limiting plate 24 and the second limiting plate 25 are arranged in the middle of the holding furnace 22 at intervals parallel to each other. connected, the first limiting plate 24 and the second limiting plate 25 are respectively provided with a plurality of limiting holes 29, and the limiting holes 29 are used to fix the reaction tube 10 so that the reaction tube 10 is in a vertical state And make its bottom abut against the liner 23 , and also can be clamped in the liner 23 through the slot 110 . The silicon core growth furnace 20 can produce a large number of silicon cores at one time, thereby improving the production efficiency of the silicon cores, and the production process of the silicon cores is simple and does not cause waste of silicon materials.

The above descriptions are only preferred embodiments of the present utility model, and are not intended to limit the present utility model. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present utility model shall be included in the Within the protection scope of the present utility model.

Claims (6)

1. a reaction tubes, for being located in a silicon core growth furnace, it is characterized in that: this reaction tubes is nitrogenize silicone tube, it the second body comprising one first body, be located at the end on this body top and be located at the first body bottom, described end is connected at the top of the first body, and be funnel-shaped structure, described second body is at least one, and the two-port of each second body forms the protuberance and recess that cooperatively interact respectively.

2. reaction tubes as claimed in claim 1, is characterized in that: also can be provided with one deck silicon nitride coating in described reaction tubes.

3. reaction tubes as claimed in claim 1, it is characterized in that: the internal diameter of described end is reduced to its bottom gradually by its top, and the internal diameter of bottom is identical with the internal diameter of body, the internal diameter of described body is all equal everywhere from top to bottom.

4. a silicon core growth furnace, the reaction tubes comprising base, be located at the holding furnace on this base and be located in this holding furnace, this holding furnace is respectively equipped with inlet mouth and air outlet, it is characterized in that: this reaction tubes is the reaction tubes in claims 1 to 3 described in any one.

5. silicon core growth furnace as claimed in claim 4, it is characterized in that: in described holding furnace, be provided with liner plate, the first limiting plate and the second limiting plate from bottom to top successively, described first limiting plate is provided with some spacing holes with corresponding respectively on the second limiting plate, described reaction tubes is arranged in the spacing hole of the first limiting plate and the second limiting plate successively, and its bottom is resisted against on liner plate.

6. silicon core growth furnace as claimed in claim 4, is characterized in that: described holding furnace inwall is arranged with the multiple and heating element be mutually independent at vertical direction.