CN204316443U - A kind of radio-frequency (RF) power amplifier circuit - Google Patents
A kind of radio-frequency (RF) power amplifier circuit Download PDFInfo
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- CN204316443U CN204316443U CN201420511525.7U CN201420511525U CN204316443U CN 204316443 U CN204316443 U CN 204316443U CN 201420511525 U CN201420511525 U CN 201420511525U CN 204316443 U CN204316443 U CN 204316443U
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- matching network
- power amplifier
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- radio
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- 230000003321 amplification Effects 0.000 claims abstract description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 9
- 239000003990 capacitor Substances 0.000 claims description 10
- 101150015217 FET4 gene Proteins 0.000 claims description 3
- 101150079361 fet5 gene Proteins 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- Y02B60/50—
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Abstract
The utility model discloses a kind of radio-frequency (RF) power amplifier circuit, this circuit structure is realized by input matching network, drive circuit, internal matching network, power amplification and output matching network.The utility model can be widely used in WCDMA frequency range front end, antenna preamble part etc. to the strict place of performance requirement.Effectively reduce the progression of power amplifier, and passband external noise can be reduced, improve stability.This radio frequency amplifying circuit can reduce the sensitiveness of circuit to temperature, strong adaptability.Meanwhile, compare the power amplifier circuit of other structures, the utility model can realize amplifying and less signal attenuation compared with large-signal, and can apply in different frequency ranges.The utility model can ensure that the linearity of system in passband is better, in order to meet system high performance requirements.
Description
Technical field
The utility model belongs to radio-frequency (RF) power amplifier circuit, particularly electronics and communication field.
Background technology
In the last few years, a series of research about radio-frequency (RF) power amplifier circuit had been carried out both at home and abroad.In specific frequency range, achieve many achievements, especially be used in WCDMA technology, be used in power-amplifier front-end and antenna feed part, but its project organization can only use in specific frequency range, and bandwidth is less, signal attenuation is larger, make system bulk comparatively large, versatility is not strong.Simultaneously traditional rf power amplifier circuit is due to the problem of its circuit structure, and make temperature sensitivity extremely strong, applicability is very limited.The utility model, for above problem, can effectively solve, to meet system requirements, and there is adjustability, stability is high, volume is little, processing is simple, applied widely.
Summary of the invention
The utility model object is to provide a kind of and utilizes CMOS transistor and lump type mixed form components and parts to build, have power amplification effect, structure is simple, multiband, volume are little, stability is high, temperature sensitivity is relatively little tunable radio frequency power amplification circuit.
The technical scheme realizing the utility model object is: a kind of radio-frequency (RF) power amplifier circuit: comprise input port, input matching network, CMOS drive circuit, internal matching network, power amplification and output matching network, output port, input matching network by tunable capacitor C
1and inductance L
1composition, drive circuit are formed by CMOS tube (FET1 ~ FET4) connection in series-parallel; Internal matching network is by tunable capacitor C
2and inductance L
2composition; Power amplifying part is made up of CMOS tube (FET5 ~ FET8) connection in series-parallel; Internal matching network is by electric capacity C
3, C
4, C
5, C
6and inductance L
3, L
4composition, wherein C
3, C
4for tunable capacitor; Input port 1 and output port 2 all connect 50 ohmages.
Compared with prior art, because the utility model adopts CMOS transistor series parallel structure and the mixing of lump structural components to form, the remarkable advantage brought is: (1) signal attenuation is less; (2) bandwidth is adjustable; (3) structure is simple, small volume; (4) out-of-band noise suppresses good; (6) good stability; (7) temperature-insensitive is strong; (8) applicability is extensive, is applicable in the various system higher to performance requirement.
Accompanying drawing explanation
Fig. 1 is a kind of radio-frequency (RF) power amplifier circuit structural representation of the utility model.
Fig. 2 is a kind of radio-frequency (RF) power amplifier circuit figure of the utility model.
Fig. 3 is a kind of radio-frequency power amplifier output matching network of the utility model circuit diagram.
Fig. 4 is a kind of radio-frequency power amplifier output matching network of the utility model response curve.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Composition graphs 1, Fig. 2, the utility model is a kind of radio-frequency (RF) power amplifier circuit, the example choosing certain wave band is described in detail, and comprises input port, input matching network, CMOS drive circuit, internal matching network, power amplification and output matching network, output port, input matching network by tunable capacitor C
1and inductance L
1composition, drive circuit are formed by CMOS tube (FET1 ~ FET4) connection in series-parallel; Internal matching network is by tunable capacitor C
2and inductance L
2composition; Power amplifying part is made up of CMOS tube (FET5 ~ FET8) connection in series-parallel; Internal matching network is by electric capacity C
3, C
4, C
5, C
6and inductance L
3, L
4composition, wherein C
3, C
4for tunable capacitor; Input port 1 and output port 2 all connect 50 ohmages.
Composition graphs 3, can find out by simulation result Fig. 4, this output matching network has wider bandwidth, and bandwidth is adjustable.And to meet the requirement of system linearity degree.
A kind of radio-frequency (RF) power amplifier circuit of the utility model, composition graphs 1, its operation principle is summarized as follows: comprise input port, input matching network, CMOS drive circuit, internal matching network, power amplification and output matching network, output port composition.After signal enters input main circuit, by regulating the size of the electric capacity in matching network, signal can be amplified to output port, thus achieve the effect of power amplification.
Main circuit in the utility model rf power amplifier circuit is made up of CMOS transistor structure and lamped element, and structure is simple, functional, meets the requirement of system linear degree, can meet the requirements of system.
Claims (3)
1. a radio-frequency (RF) power amplifier circuit, is characterized in that: comprise input port, input matching network, CMOS drive circuit, internal matching network, power amplification and output matching network, output port, input matching network by tunable capacitor C
1and inductance L
1composition, drive circuit are formed by CMOS tube (FET1 ~ FET4) connection in series-parallel; Internal matching network is by tunable capacitor C
2and inductance L
2composition; Power amplifying part is made up of CMOS tube (FET5 ~ FET8) connection in series-parallel; Internal matching network is by electric capacity C
3, C
4, C
5, C
6and inductance L
3, L
4composition, wherein C
3, C
4for tunable capacitor; Input port 1 and output port 2 all connect 50 ohmages.
2., according to a kind of radio-frequency (RF) power amplifier circuit described in claim 1, it is characterized in that drive circuit is made up of four CMOS tube transistors; Power amplifying part is made up of four CMOS tube transistors; Matching network realizes by passive component tunable capacitor, inductance, and wherein input matching network adopts Γ shape structure to realize; Intermediate match network adopts T-shaped network configuration to realize; Output matching network adopts pin network structure to realize.
3. a kind of radio-frequency (RF) power amplifier circuit according to claim 1 or 2, is characterized in that: its circuit structure can realize the power amplification of different bandwidth in 10MHz-10GHz frequency range.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420511525.7U CN204316443U (en) | 2014-09-08 | 2014-09-08 | A kind of radio-frequency (RF) power amplifier circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420511525.7U CN204316443U (en) | 2014-09-08 | 2014-09-08 | A kind of radio-frequency (RF) power amplifier circuit |
Publications (1)
Publication Number | Publication Date |
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CN204316443U true CN204316443U (en) | 2015-05-06 |
Family
ID=53138737
Family Applications (1)
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CN201420511525.7U Expired - Fee Related CN204316443U (en) | 2014-09-08 | 2014-09-08 | A kind of radio-frequency (RF) power amplifier circuit |
Country Status (1)
Country | Link |
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CN (1) | CN204316443U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104184419A (en) * | 2014-09-08 | 2014-12-03 | 王少夫 | Radio frequency power amplifier circuit |
-
2014
- 2014-09-08 CN CN201420511525.7U patent/CN204316443U/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104184419A (en) * | 2014-09-08 | 2014-12-03 | 王少夫 | Radio frequency power amplifier circuit |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150506 Termination date: 20150908 |
|
EXPY | Termination of patent right or utility model |