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CN204316443U - A kind of radio-frequency (RF) power amplifier circuit - Google Patents

A kind of radio-frequency (RF) power amplifier circuit Download PDF

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Publication number
CN204316443U
CN204316443U CN201420511525.7U CN201420511525U CN204316443U CN 204316443 U CN204316443 U CN 204316443U CN 201420511525 U CN201420511525 U CN 201420511525U CN 204316443 U CN204316443 U CN 204316443U
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CN
China
Prior art keywords
matching network
power amplifier
frequency
radio
circuit
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420511525.7U
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Chinese (zh)
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不公告发明人
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Individual
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Individual
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Priority to CN201420511525.7U priority Critical patent/CN204316443U/en
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Publication of CN204316443U publication Critical patent/CN204316443U/en
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Expired - Fee Related legal-status Critical Current

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    • Y02B60/50

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  • Amplifiers (AREA)

Abstract

The utility model discloses a kind of radio-frequency (RF) power amplifier circuit, this circuit structure is realized by input matching network, drive circuit, internal matching network, power amplification and output matching network.The utility model can be widely used in WCDMA frequency range front end, antenna preamble part etc. to the strict place of performance requirement.Effectively reduce the progression of power amplifier, and passband external noise can be reduced, improve stability.This radio frequency amplifying circuit can reduce the sensitiveness of circuit to temperature, strong adaptability.Meanwhile, compare the power amplifier circuit of other structures, the utility model can realize amplifying and less signal attenuation compared with large-signal, and can apply in different frequency ranges.The utility model can ensure that the linearity of system in passband is better, in order to meet system high performance requirements.

Description

A kind of radio-frequency (RF) power amplifier circuit
Technical field
The utility model belongs to radio-frequency (RF) power amplifier circuit, particularly electronics and communication field.
Background technology
In the last few years, a series of research about radio-frequency (RF) power amplifier circuit had been carried out both at home and abroad.In specific frequency range, achieve many achievements, especially be used in WCDMA technology, be used in power-amplifier front-end and antenna feed part, but its project organization can only use in specific frequency range, and bandwidth is less, signal attenuation is larger, make system bulk comparatively large, versatility is not strong.Simultaneously traditional rf power amplifier circuit is due to the problem of its circuit structure, and make temperature sensitivity extremely strong, applicability is very limited.The utility model, for above problem, can effectively solve, to meet system requirements, and there is adjustability, stability is high, volume is little, processing is simple, applied widely.
Summary of the invention
The utility model object is to provide a kind of and utilizes CMOS transistor and lump type mixed form components and parts to build, have power amplification effect, structure is simple, multiband, volume are little, stability is high, temperature sensitivity is relatively little tunable radio frequency power amplification circuit.
The technical scheme realizing the utility model object is: a kind of radio-frequency (RF) power amplifier circuit: comprise input port, input matching network, CMOS drive circuit, internal matching network, power amplification and output matching network, output port, input matching network by tunable capacitor C 1and inductance L 1composition, drive circuit are formed by CMOS tube (FET1 ~ FET4) connection in series-parallel; Internal matching network is by tunable capacitor C 2and inductance L 2composition; Power amplifying part is made up of CMOS tube (FET5 ~ FET8) connection in series-parallel; Internal matching network is by electric capacity C 3, C 4, C 5, C 6and inductance L 3, L 4composition, wherein C 3, C 4for tunable capacitor; Input port 1 and output port 2 all connect 50 ohmages.
Compared with prior art, because the utility model adopts CMOS transistor series parallel structure and the mixing of lump structural components to form, the remarkable advantage brought is: (1) signal attenuation is less; (2) bandwidth is adjustable; (3) structure is simple, small volume; (4) out-of-band noise suppresses good; (6) good stability; (7) temperature-insensitive is strong; (8) applicability is extensive, is applicable in the various system higher to performance requirement.
Accompanying drawing explanation
Fig. 1 is a kind of radio-frequency (RF) power amplifier circuit structural representation of the utility model.
Fig. 2 is a kind of radio-frequency (RF) power amplifier circuit figure of the utility model.
Fig. 3 is a kind of radio-frequency power amplifier output matching network of the utility model circuit diagram.
Fig. 4 is a kind of radio-frequency power amplifier output matching network of the utility model response curve.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Composition graphs 1, Fig. 2, the utility model is a kind of radio-frequency (RF) power amplifier circuit, the example choosing certain wave band is described in detail, and comprises input port, input matching network, CMOS drive circuit, internal matching network, power amplification and output matching network, output port, input matching network by tunable capacitor C 1and inductance L 1composition, drive circuit are formed by CMOS tube (FET1 ~ FET4) connection in series-parallel; Internal matching network is by tunable capacitor C 2and inductance L 2composition; Power amplifying part is made up of CMOS tube (FET5 ~ FET8) connection in series-parallel; Internal matching network is by electric capacity C 3, C 4, C 5, C 6and inductance L 3, L 4composition, wherein C 3, C 4for tunable capacitor; Input port 1 and output port 2 all connect 50 ohmages.
Composition graphs 3, can find out by simulation result Fig. 4, this output matching network has wider bandwidth, and bandwidth is adjustable.And to meet the requirement of system linearity degree.
A kind of radio-frequency (RF) power amplifier circuit of the utility model, composition graphs 1, its operation principle is summarized as follows: comprise input port, input matching network, CMOS drive circuit, internal matching network, power amplification and output matching network, output port composition.After signal enters input main circuit, by regulating the size of the electric capacity in matching network, signal can be amplified to output port, thus achieve the effect of power amplification.
Main circuit in the utility model rf power amplifier circuit is made up of CMOS transistor structure and lamped element, and structure is simple, functional, meets the requirement of system linear degree, can meet the requirements of system.

Claims (3)

1. a radio-frequency (RF) power amplifier circuit, is characterized in that: comprise input port, input matching network, CMOS drive circuit, internal matching network, power amplification and output matching network, output port, input matching network by tunable capacitor C 1and inductance L 1composition, drive circuit are formed by CMOS tube (FET1 ~ FET4) connection in series-parallel; Internal matching network is by tunable capacitor C 2and inductance L 2composition; Power amplifying part is made up of CMOS tube (FET5 ~ FET8) connection in series-parallel; Internal matching network is by electric capacity C 3, C 4, C 5, C 6and inductance L 3, L 4composition, wherein C 3, C 4for tunable capacitor; Input port 1 and output port 2 all connect 50 ohmages.
2., according to a kind of radio-frequency (RF) power amplifier circuit described in claim 1, it is characterized in that drive circuit is made up of four CMOS tube transistors; Power amplifying part is made up of four CMOS tube transistors; Matching network realizes by passive component tunable capacitor, inductance, and wherein input matching network adopts Γ shape structure to realize; Intermediate match network adopts T-shaped network configuration to realize; Output matching network adopts pin network structure to realize.
3. a kind of radio-frequency (RF) power amplifier circuit according to claim 1 or 2, is characterized in that: its circuit structure can realize the power amplification of different bandwidth in 10MHz-10GHz frequency range.
CN201420511525.7U 2014-09-08 2014-09-08 A kind of radio-frequency (RF) power amplifier circuit Expired - Fee Related CN204316443U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420511525.7U CN204316443U (en) 2014-09-08 2014-09-08 A kind of radio-frequency (RF) power amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420511525.7U CN204316443U (en) 2014-09-08 2014-09-08 A kind of radio-frequency (RF) power amplifier circuit

Publications (1)

Publication Number Publication Date
CN204316443U true CN204316443U (en) 2015-05-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420511525.7U Expired - Fee Related CN204316443U (en) 2014-09-08 2014-09-08 A kind of radio-frequency (RF) power amplifier circuit

Country Status (1)

Country Link
CN (1) CN204316443U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104184419A (en) * 2014-09-08 2014-12-03 王少夫 Radio frequency power amplifier circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104184419A (en) * 2014-09-08 2014-12-03 王少夫 Radio frequency power amplifier circuit

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Legal Events

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150506

Termination date: 20150908

EXPY Termination of patent right or utility model