CN204230284U - A kind of LED chip improving luminous efficiency - Google Patents
A kind of LED chip improving luminous efficiency Download PDFInfo
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- CN204230284U CN204230284U CN201420572054.0U CN201420572054U CN204230284U CN 204230284 U CN204230284 U CN 204230284U CN 201420572054 U CN201420572054 U CN 201420572054U CN 204230284 U CN204230284 U CN 204230284U
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Abstract
The utility model discloses a kind of LED chip improving luminous efficiency, it is characterized in that: comprise substrate, be located at described suprabasil N-type GaN layer, be arranged at the P type GaN layer in described N-type GaN layer, described N-type GaN layer is provided with N electrode, and described P type GaN layer is provided with P electrode, is provided with ITO conductive layer between described P electrode and described P type GaN layer, described P electrode and described P type GaN layer realize ohmic contact by described ITO conductive layer, and the thickness of described ITO conductive layer is 2300A.By being provided with the ITO conductive layer and ohmic contact that thickness is 2300A between described P electrode and described P type GaN layer, simplify the operation while can improving LED luminance technique, reduces production cost.
Description
Technical field
The utility model belongs to semiconductor electronic component field, particularly a kind of LED chip improving luminous efficiency.
Background technology
In lighting field, the application of power LED luminous product is very the sight attracting people, the new type light source lighting technology taking LED as representative is growing, it is long that LED has energy-saving and environmental protection, life-span, the features such as the response time is fast, can be widely used in the illumination occasion in various field, the Hair light rate Will Hui Prepare Off that more Come is more with Time LED notes and takes notice of.
In existing LED chip technique usually in the following way, P-GaN does high anti-layer, then does electric current CBL barrier layer, TCL current extending and electrode.The optical efficiency that this structure only improves is good not, and manufacture craft is comparatively complicated, and cost is relatively high.
Therefore, be necessary to relate to a kind of new LED chip, to overcome above-mentioned technical problem.
Summary of the invention
The object of this invention is to provide a kind of LED chip improving luminous efficiency, simplify the operation while improving LED luminance technique, reduces production cost.
The technical scheme realizing above-mentioned purpose is: a kind of LED chip improving luminous efficiency, comprise substrate, be located at described suprabasil N-type GaN layer, be arranged at the P type GaN layer in described N-type GaN layer, described N-type GaN layer is provided with N electrode, and described P type GaN layer is provided with P electrode, is provided with ITO conductive layer between described P electrode and described P type GaN layer, described P electrode and described P type GaN layer realize ohmic contact by described ITO conductive layer, and the thickness of described ITO conductive layer is 2300A.
In technique scheme, the material of described substrate is one of sapphire, silicon, carborundum.
In technique scheme, the Inner contracting width of described ITO conductive layer is 2um-5um.
In technique scheme, described ITO conductive layer is arranged with SiO2 barrier layer outside described P electrode, described SiO2 barrier layer thickness is 2300A.
In technique scheme, the width that inside contracts of described SiO2 is 1um-5um.
The utility model improves the LED chip of luminous efficiency, and by being provided with the ITO conductive layer and ohmic contact that thickness is 2300A between described P electrode and described P type GaN layer, simplify the operation while can improving LED luminance technique, reduces production cost.
Accompanying drawing explanation
Fig. 1 is the LED chip structure schematic diagram that the utility model improves luminous efficiency.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly understand, those skilled in the art better understand the technical solution of the utility model, below in conjunction with embodiment also with reference to accompanying drawing, further describe the utility model.Should be appreciated that, these describe just exemplary, and do not really want to limit scope of the present utility model.In addition, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring concept of the present utility model.
Refer to shown in accompanying drawing 1, show the LED chip structure schematic diagram that the utility model improves luminous efficiency, the utility model improves the LED chip of luminous efficiency, comprise N-type GaN layer 1, described N-type GaN layer 1 is provided with N electrode 2, be arranged at the P type PaN layer 3 in described N-type GaN layer 1, described P type PaN layer 3 is provided with P electrode 4, described N electrode 3 and P electrode 4 are all chromium platinums of evaporation, described LED chip also comprises the substrate 5 being arranged on described N-type GaN layer 1 bottom surface, in this embodiment preferably sapphire as substrate.
Between described P electrode 4 and described P type PaN layer 3, be provided with ITO conductive layer 6, described P electrode 4 realizes ohmic contact with described P type PaN layer 3 by described ITO conductive layer 6, and the thickness of described ITO conductive layer 6 is 2300A.Can better ensure conductivity and the transparency, and the width that inside contracts of described ITO conductive layer is 2um-5um.Described ITO conductive layer 6 is arranged with SiO2 barrier layer 7 outside described P electrode 4, and the Inner contracting width of described SiO2 is 1um-5um.Can current spread be improved, improve luminance.
The utility model improves the LED chip of luminous efficiency, and by being provided with the ITO conductive layer 6 and ohmic contact that thickness is 2300A between described P electrode 4 and described P type GaN3 layer, simplify the operation while can improving LED luminance technique, reduces production cost.In addition, current spread can be improved in SiO2 barrier layer, improves luminance.
Should be understood that, above-mentioned embodiment of the present utility model only for exemplary illustration or explain principle of the present utility model, and is not formed restriction of the present utility model.Therefore, any amendment made when not departing from spirit and scope of the present utility model, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.In addition, the utility model claims be intended to contain fall into claims scope and border or this scope and border equivalents in whole change and modification.
Claims (5)
1. one kind is improved the LED chip of luminous efficiency, it is characterized in that: comprise substrate, be located at described suprabasil N-type GaN layer, be arranged at the P type GaN layer in described N-type GaN layer, described N-type GaN layer is provided with N electrode, and described P type GaN layer is provided with P electrode, is provided with ITO conductive layer between described P electrode and described P type GaN layer, described P electrode and described P type GaN layer realize ohmic contact by described ITO conductive layer, and the thickness of described ITO conductive layer is 2300A.
2. the LED chip of raising luminous efficiency according to claim 1, is characterized in that: the material of described substrate is one of sapphire, silicon, carborundum.
3. the LED chip of raising luminous efficiency according to claim 1, is characterized in that:
The Inner contracting width of described ITO conductive layer is 2um-5um.
4. the LED chip of raising luminous efficiency according to claim 1, is characterized in that: described ITO conductive layer is arranged with SiO2 barrier layer outside described P electrode, and described SiO2 barrier layer thickness is 2300A.
5. the LED chip of raising luminous efficiency according to claim 4, is characterized in that: the Inner contracting width of described SiO2 is 1um-5um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420572054.0U CN204230284U (en) | 2014-09-30 | 2014-09-30 | A kind of LED chip improving luminous efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420572054.0U CN204230284U (en) | 2014-09-30 | 2014-09-30 | A kind of LED chip improving luminous efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204230284U true CN204230284U (en) | 2015-03-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420572054.0U Expired - Lifetime CN204230284U (en) | 2014-09-30 | 2014-09-30 | A kind of LED chip improving luminous efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204230284U (en) |
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2014
- 2014-09-30 CN CN201420572054.0U patent/CN204230284U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wu Weidong Inventor after: Gao Junmin Inventor after: Cheng Tao Inventor after: Wang Zhanwei Inventor after: Yu Hailian Inventor before: Gao Junmin Inventor before: Xu Jian Inventor before: Wu Weidong Inventor before: Li Ailing Inventor before: Cheng Tao Inventor before: Wang Zhanwei Inventor before: Yu Hailian |
|
| COR | Change of bibliographic data | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170203 Address after: Dongsi road 257091 Shandong city of Dongying province Dongying District No. 1 photoelectric building Patentee after: SHANDONG CHENGLIN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Patentee after: SHANDONG JUXIN PHOTOELECTRIC TECHNOLOGY CO.,LTD. Address before: 257091 Shandong Province, Dongying City Dongcheng East Road and north two road intersection south west 100 meters Patentee before: SHANDONG CHENGLIN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20150325 |
|
| CX01 | Expiry of patent term |