CN204119015U - The gate drive circuit of mesohigh power semiconductor convertor equipment - Google Patents
The gate drive circuit of mesohigh power semiconductor convertor equipment Download PDFInfo
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- CN204119015U CN204119015U CN201420678810.8U CN201420678810U CN204119015U CN 204119015 U CN204119015 U CN 204119015U CN 201420678810 U CN201420678810 U CN 201420678810U CN 204119015 U CN204119015 U CN 204119015U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 239000000835 fiber Substances 0.000 claims abstract 2
- 239000013307 optical fiber Substances 0.000 claims description 10
- 230000002457 bidirectional effect Effects 0.000 claims description 7
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 238000001914 filtration Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000004804 winding Methods 0.000 description 7
- 239000007858 starting material Substances 0.000 description 6
- 238000009413 insulation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005032 impulse control Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
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Abstract
本实用新型涉及一种中高压功率半导体变流设备控制技术。一种中高压功率半导体变流设备的门极驱动电路，低压中频电源（1）接在通用工业电源上，低压中频电源输出接中频降压变压器（2）输入初级端，中频降压变压器输出次级端接高压电缆（3），在高压电缆上套装有多个中频电流互感器（4），中频电流互感器输出接整流滤波电路（5），整流滤波电路输出接脉冲功率放大电路（7）输入端，脉冲功率放大电路输入端同时接门极驱动信号光纤输入电路（6），脉冲功率放大电路输出接中高压功率半导体器件的门极。本实用新型的门极驱动电路能对变流设备中处于各个不同高电压水平下的功率半导体器件门极进行触发控制。
The utility model relates to a control technology for medium and high voltage power semiconductor converter equipment. A gate drive circuit for medium and high voltage power semiconductor converter equipment, the low-voltage intermediate frequency power supply (1) is connected to a general industrial power supply, the output of the low-voltage intermediate frequency power supply is connected to the primary end of the intermediate frequency step-down transformer (2), and the output of the intermediate frequency step-down transformer is secondary The stage is connected to a high-voltage cable (3), and a plurality of medium-frequency current transformers (4) are set on the high-voltage cable. The output of the medium-frequency current transformer is connected to the rectification and filtering circuit (5), and the output of the rectification and filtering circuit is connected to the pulse power amplifier circuit (7). The input end of the pulse power amplifier circuit is simultaneously connected to the gate drive signal fiber input circuit (6), and the output of the pulse power amplifier circuit is connected to the gate of the medium and high voltage power semiconductor device. The gate electrode drive circuit of the utility model can trigger and control the gate electrodes of power semiconductor devices under various high voltage levels in the converter equipment.
Description
Technical field
The utility model relates to a kind of mesohigh power semiconductor convertor equipment control technology, particularly relates to a kind of gate drive circuit of mesohigh power semiconductor convertor equipment.
Background technology
Mesohigh power semiconductor (such as thyristor, bidirectional thyristor, gate level turn-off thyristor, integrated gate commutated thyristor) convertor equipment, such as mesohigh thyristor alternating-current voltage adjusting device, mesohigh thyristor soft-starter or mesohigh thyristor rectifier contravariant equipment etc., all take microprocessor as the low-voltage system of core due to its automation control system, and thyristor is all in high voltage appearance circuit, so its phase-shifting trigger pulse, usually be all produce phase shifting control trigger impulse through Optical Fiber Transmission by Control System of Microcomputer, the signal of telecommunication is become again through opto-electronic conversion, be added between the gate pole of thyristor and negative electrode by semiconductor power amplification circuit, make IGBT group conducting.This one or two light signal become can control IGBT group conducting circuit (gate drive circuit) although voltage is not high, but between tens volts to three, 40 volts, but it is in high voltage environment, its control signal comes from optical fiber, can meet the insulation request in high pressure forceful electric power loop and low pressure vulnerabilities scan loop.The isolating problem in the high pressure forceful electric power loop that another will solve and low pressure vulnerabilities scan loop is its power supply, and also namely circuits for triggering power supply (triggering voltage) also will meet the insulation request of high-low voltage.
Existing solution has following three kinds:
1, so-called " self-powered thyristor gate drive circuit ".See Fig. 1, Fig. 1 is the phase in a 6KV thyristor solid-state soft starter, power to thyristor gate drive circuit by the other resitstance voltage divider in parallel of the thyristor in 6KV forceful electric power loop takes out voltage, and its phase-shift pulse control signal is sent here by optical fiber, so thyristor gate drive circuit here and light-current system are isolated.But there is fatal shortcoming in this method: 1) power consumption is large.Simply calculate, if thyristor gate drive circuit needs 20V 10W power, for the 6KV circuit of three Thyristors in series, each divider resistance will increase the power consumption of 2KW.2) check very inconvenient.Thyristor gate drive circuit is because under being in High Voltage electrical environment, and if after high-voltage power voltage reduces, this circuit just can not work, so can not simply replace high pressure to carry out work with low pressure 380V power supply, so be provided with the attaching plug for checkout facility on the board all in addition.3) because this gate drive circuit after the voltage drop of thyristor two end is with regard to cisco unity malfunction, so also need to provide other independent power supply under a few thing state.Such as adopting can be specially dated on the mesohigh thyristor solid-state soft starter operation instructions of this gate drive circuit: " noting: if use pump to control or stop controlling, gate-drive plate uses independent current source power supply board to power continuously ".
So newly-designed product does not generally adopt the 1st kind of method, there are two kinds of circuit structures improved below at present.
2, the thyristor gate drive circuit of power current transformer for supplying power is adopted.In a high-pressure thyristor device, a such as 6KV thyristor soft-starter, each thyristor gate drive circuit is powered by the secondary winding of an independently current transformer, the secondary current of instrument transformer then comes from a high-tension cable through them, and high-tension cable two end is received on a low voltage heavy current transformer.So, this root high-tension cable is just shouldered the buffer action of low voltage heavy current transformer from the current transformer winding in the gate drive circuit be under different level high; Each current transformer has suitable distance simultaneously, is also isolation mutually between them, thus ensures that each gate drive circuit being in different voltage levvl can be mutually isolated.The shortcoming of which is that the elementary exciting current of instrument transformer is larger, controls power ratio comparatively large, and the high-tension electricity cable core through each instrument transformer is also relatively thicker, and each current transformer volume is larger.
3, the semiconductor power device gate drive circuit of high-voltage pulse power source transformer-supplied is adopted.In mesohigh power semiconductor (such as thyristor) convertor equipment, a such as 10KV thyristor soft-starter, each thyristor gate drive circuit is powered by each auxiliary winding of several high-voltage pulse power source transformer, and a high-voltage pulse power source transformer is powered to four thyristor gate drive circuit.Because thyristor gate drive circuit is in the high voltage environment of 10KV, and also there is very high voltage between each thyristor, so very high to the insulating requirements of high-voltage pulse power source transformer, each winding all will examine it to insulate by 10KV operating voltage, and their output lead also uses the high-tension bus-bar of silicon rubber insulation.If each such high-voltage pulse power source transformer is with too many thyristor, volume will be very huge.
Summary of the invention
The purpose of this utility model is the gate drive circuit providing a kind of mesohigh power semiconductor convertor equipment, and this gate drive circuit can carry out trigging control to the power semiconductor be in convertor equipment under each different level high (such as thyristor, bidirectional thyristor, gate level turn-off thyristor, integrated gate commutated thyristor) gate pole.
In order to realize above-mentioned technical purpose, the utility model adopts following technical scheme:
A gate drive circuit for mesohigh power semiconductor convertor equipment, comprises low pressure intermediate frequency power supply, intermediate frequency step-down transformer, high-tension cable, electric current of intermediate frequency instrument transformer, current rectifying and wave filtering circuit, gate electrode drive signals optical fiber input circuit, pulse power amplifier circuit;
Described low pressure intermediate frequency power supply is connected on universal industrial power supply, low pressure intermediate frequency power supply exports and connects intermediate frequency step-down transformer input (elementary) end, intermediate frequency step-down transformer exports (secondary) terminated high voltage electrical cables, high-tension cable is set with multiple electric current of intermediate frequency instrument transformer, electric current of intermediate frequency instrument transformer exports and connects current rectifying and wave filtering circuit, current rectifying and wave filtering circuit exports and connects pulse power amplifier circuit input, pulse power amplifier circuit input connects gate electrode drive signals optical fiber input circuit simultaneously, and pulse power amplifier circuit exports the gate pole connecing mesohigh power semiconductor.
Described intermediate frequency is 400 to 1000Hz.
Described mesohigh power semiconductor is thyristor, bidirectional thyristor, gate level turn-off thyristor, integrated gate commutated thyristor.
Described high-tension cable is high voltage-small current single-core cable.
Described each electric current of intermediate frequency instrument transformer is mutually isolated.
The gate drive circuit of the utility model mesohigh power semiconductor convertor equipment makes the gate drive circuit energy being in different voltage levvl mutually isolated, and isolates with low pressure microcomputer control circuit.Gate drive circuit of the present utility model can carry out trigging control to the power semiconductor be in convertor equipment under each different level high (such as thyristor, bidirectional thyristor, gate level turn-off thyristor, integrated gate commutated thyristor) gate pole.Compared with the scheme such as employing power current transformer for supplying power, power consumption and the components and parts volume of whole gate drive circuit all greatly reduce.
Accompanying drawing explanation
Fig. 1 is the self-powered gate drive circuit electrical schematic diagram of a phase thyristor in 6KV thyristor soft-starter;
Fig. 2 is the gate drive circuit electrical schematic diagram of the utility model mesohigh power semiconductor convertor equipment.
In figure: 1 low pressure intermediate frequency power supply, 2 intermediate frequency step-down transformers, 3 high-tension cables (single core), 4 electric current of intermediate frequency instrument transformers, 5 current rectifying and wave filtering circuits, 6 gate electrode drive signals optical fiber input circuits, 7 pulse power amplifier circuits.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
See Fig. 2, a gate drive circuit for mesohigh power semiconductor convertor equipment, comprises low pressure intermediate frequency power supply 1, intermediate frequency step-down transformer 2, high-tension cable 3, electric current of intermediate frequency instrument transformer 4, current rectifying and wave filtering circuit 5, gate electrode drive signals optical fiber input circuit 6, pulse power amplifier circuit 7, described low pressure intermediate frequency power supply 1 is connected on universal industrial power supply, low pressure intermediate frequency power supply 1 output connects intermediate frequency step-down transformer 2 and inputs (elementary) end, intermediate frequency step-down transformer 2 exports (secondary) terminated high voltage electrical cables 3, high-tension cable 3 is set with multiple electric current of intermediate frequency instrument transformer 4, electric current of intermediate frequency instrument transformer 4 exports and connects current rectifying and wave filtering circuit 5, current rectifying and wave filtering circuit 5 exports and connects pulse power amplifier circuit 7 input, pulse power amplifier circuit 7 input connects gate electrode drive signals optical fiber input circuit 6 simultaneously, pulse power amplifier circuit 7 exports the gate pole connecing mesohigh power semiconductor.Described universal industrial power supply is the single-phase 220V of power frequency; Intermediate frequency is 400 to 1000Hz; Mesohigh power semiconductor is thyristor, bidirectional thyristor, gate level turn-off thyristor, integrated gate commutated thyristor; High-tension cable 3 is high voltage-small current single-core cable; Each electric current of intermediate frequency instrument transformer 4 is mutually isolated.
The gate drive circuit of the utility model mesohigh power semiconductor convertor equipment is powered by the electric current of intermediate frequency instrument transformer 4 that each locus be enclosed within a high voltage-small current single-core cable is mutually isolated, electric current of intermediate frequency instrument transformer 4 is low voltage mutual inductor, therefore the power supply provided by each instrument transformer secondary is mutually isolated, and mutually isolated with its primary current, adapt with the electric pressure of mesohigh semiconductor variable flow device withstand voltage can be born.Because electric current of intermediate frequency instrument transformer 4 armature winding is in low voltage control system, and its body and secondary winding thereof are in high-voltage power convertor circuit system, utilize high-tension cable 3 to realize the isolation of electric current of intermediate frequency instrument transformer 4 primary and secondary winding here.
High-tension cable 3 in the utility model is high voltage-small current single-core cable, and the electric current flow through in high-tension cable is small area analysis.High-tension cable is provided through a step-down transformer 2 by a low pressure intermediate frequency power supply 1.This low pressure intermediate frequency power supply 1 is connected on public control power supply, i.e. the single-phase 220V of power frequency.
Described electric current of intermediate frequency instrument transformer 4 is operated in 400 ~ 1000Hz intermediate frequency, so small volume, its current rectifying and wave filtering circuit is also smaller.
Described gate pole control signal comes from optical fiber, after light-to-current inversion, then is applied to through pulse power amplifier circuit 7 on the gate pole of power semiconductor (such as thyristor, bidirectional thyristor, gate level turn-off thyristor, integrated gate commutated thyristor).
The gate drive circuit of the utility model mesohigh power semiconductor convertor equipment is applicable to the mesohigh convertor equipment of mesohigh power semiconductor composition, applies trigger impulse control the power device be under each different high-pressure horizontal.This power device is thyristor or multiple types seemingly semiconductor power device, and power device can have multiple.
These are only preferred embodiment of the present utility model; be not intended to limit protection range of the present utility model; therefore, all do within spirit of the present utility model and principle any amendment, equivalent replacement, improvement etc., all should be included within protection range of the present utility model.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420678810.8U CN204119015U (en) | 2014-11-14 | 2014-11-14 | The gate drive circuit of mesohigh power semiconductor convertor equipment |
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| CN201420678810.8U CN204119015U (en) | 2014-11-14 | 2014-11-14 | The gate drive circuit of mesohigh power semiconductor convertor equipment |
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| CN204119015U true CN204119015U (en) | 2015-01-21 |
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| CN201420678810.8U Expired - Lifetime CN204119015U (en) | 2014-11-14 | 2014-11-14 | The gate drive circuit of mesohigh power semiconductor convertor equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112542957A (en) * | 2020-11-11 | 2021-03-23 | 中国长江三峡集团有限公司 | Average value equivalence-based IGCT-MMC loss analysis method |
-
2014
- 2014-11-14 CN CN201420678810.8U patent/CN204119015U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112542957A (en) * | 2020-11-11 | 2021-03-23 | 中国长江三峡集团有限公司 | Average value equivalence-based IGCT-MMC loss analysis method |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160817 Address after: 200949 Baoshan District, Shanghai, Shanghai Road, No. 9088, No. Patentee after: SHANGHAI JIEYI GENERAL ELECTRIC Inc. Address before: 200031 Shanghai city Xuhui District High Road 69 Lane C Lane 1 room 2 Patentee before: Li Wujiu |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170712 Address after: 200031 Shanghai city Xuhui District High Road 69 Lane C Lane 1 room 2 Patentee after: Li Wujiu Address before: 200949 Baoshan District, Shanghai, Shanghai Road, No. 9088, No. Patentee before: SHANGHAI JIEYI GENERAL ELECTRIC Inc. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20150121 |