CN203965572U - Based on the system of flexible piezoelectric membraneous material monitoring GIS partial discharge position - Google Patents
Based on the system of flexible piezoelectric membraneous material monitoring GIS partial discharge position Download PDFInfo
- Publication number
- CN203965572U CN203965572U CN201420341199.XU CN201420341199U CN203965572U CN 203965572 U CN203965572 U CN 203965572U CN 201420341199 U CN201420341199 U CN 201420341199U CN 203965572 U CN203965572 U CN 203965572U
- Authority
- CN
- China
- Prior art keywords
- transport
- placing device
- resistance
- capacitor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title claims abstract description 23
- 230000036961 partial effect Effects 0.000 title claims abstract description 21
- 238000012544 monitoring process Methods 0.000 title claims abstract description 17
- 238000012545 processing Methods 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims description 64
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 27
- 239000002033 PVDF binder Substances 0.000 claims description 20
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 20
- 230000003321 amplification Effects 0.000 claims description 18
- 238000001914 filtration Methods 0.000 claims description 6
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 description 32
- 238000001514 detection method Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 229910000838 Al alloy Inorganic materials 0.000 description 9
- 238000009826 distribution Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000011160 research Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910018503 SF6 Inorganic materials 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
Description
技术领域technical field
本实用新型涉及电力监测领域,具体地,涉及一种基于柔性压电薄膜材料监测GIS局部放电位置的系统。The utility model relates to the field of electric power monitoring, in particular to a system for monitoring the partial discharge position of a GIS based on a flexible piezoelectric film material.
背景技术Background technique
随着GIS在电力系统中的大量应用,近几年公司新建的变电站几乎全是GIS设备。With the extensive application of GIS in the power system, almost all of the company's new substations in recent years are GIS equipment.
当GIS内部产生局部放电的时候,放电过程中产生的高温,使气体分子发生剧烈的热运动,并通过相邻气体媒质一直传播下去,形成声波,由于放电的时间非常短,因此产生的声波频谱很宽,可以从几十赫兹至几兆赫兹。这表明GIS内部放电时会产生冲击振动及声音,因此可以通过在腔体外壁上安装超声波传感器来测量局部放电信号。When partial discharge occurs inside the GIS, the high temperature generated during the discharge process causes the gas molecules to undergo violent thermal motion, and propagates through the adjacent gas medium to form sound waves. Since the discharge time is very short, the sound wave spectrum generated Very wide, from tens of hertz to several megahertz. This shows that shock vibration and sound will be generated when the internal discharge of GIS, so the partial discharge signal can be measured by installing an ultrasonic sensor on the outer wall of the cavity.
如图1所示当内部发生放电时,声波与结构双向耦合,声压信号作为激励源垂直作用在GIS壳体、盆式绝缘子的内表面及导电金属杆的外表面引起结构的振动,同时振动又会对内声场产生反作用,其相互作用的效果引起铝合金金属圆柱桶在气体中的振动。因此,通过测量铝合金金属圆柱体的振动,可以监测到GIS内部发生的放电。As shown in Figure 1, when the internal discharge occurs, the sound wave and the structure are bidirectionally coupled, and the sound pressure signal acts vertically on the GIS shell, the inner surface of the pot insulator and the outer surface of the conductive metal rod as an excitation source to cause the structure to vibrate, and the vibration at the same time It will also have a reaction to the internal sound field, and the interaction effect will cause the aluminum alloy metal cylindrical barrel to vibrate in the gas. Therefore, by measuring the vibration of the aluminum alloy metal cylinder, the discharge occurring inside the GIS can be monitored.
耐压试验作为GIS交接试验的重要步骤,为确保设备正常投运具有非常重要的意义。但交接试验耐压过程中,经常出现GIS击穿或闪络的情况,现在一般采用人耳去听的办法来确定是哪一个间隔发生击穿。由于耐压时间短,并且GIS击穿后声音在金属筒壁中传播,很难准确的判断具体是哪个位置发生放电。As an important step of the GIS handover test, the withstand voltage test is of great significance to ensure the normal operation of the equipment. However, during the handover test withstand voltage process, GIS breakdown or flashover often occurs, and now the method of listening with human ears is generally used to determine which interval has breakdown. Due to the short withstand voltage time and the sound propagation in the metal cylinder wall after GIS breakdown, it is difficult to accurately determine where the discharge occurs.
GIS闪络击穿定位技术的研究,国内外做过许多的基础研究工作。多数是采用多通道超声传感器进行监测,或采用超高频局放仪进行监测。The research on GIS flashover breakdown positioning technology has done a lot of basic research work at home and abroad. Most of them are monitored by multi-channel ultrasonic sensors, or by ultra-high frequency partial discharge instruments.
而多通道超声传感器进行监测,采用监测点受到仪器通道数目的限制,最多为12-16通道。而且信号有衰减,最大距离也就20米。对于间隔多,母线距离较长的GIS,远远不能满足现场的要求。而采用分解物测试,由于击穿后SF6的分解产物的产生需要一段时间,不能立即测试,并且逐个气室去测量,也不适合现场要求。For monitoring with multi-channel ultrasonic sensors, the number of monitoring points used is limited by the number of instrument channels, with a maximum of 12-16 channels. Moreover, the signal is attenuated, and the maximum distance is only 20 meters. For GIS with many intervals and long bus distance, it is far from meeting the requirements of the site. However, the decomposition product test is not suitable for on-site requirements because it takes a period of time for the decomposition product of SF6 to be produced after breakdown, and it cannot be tested immediately, and it is measured one by one.
近几年,国内外一些电力科研机构正在开发研究更为有效、便捷的适用于GIS缺陷定位的技术和设备。主要的研究方法有以下几种:超声波检测法、特高频检测法、分解气检测法,各类检测技术的特点如表1所示。In recent years, some electric power scientific research institutions at home and abroad are developing and researching more effective and convenient technologies and equipment suitable for GIS defect location. The main research methods are as follows: ultrasonic detection method, ultra-high frequency detection method, and decomposition gas detection method. The characteristics of various detection technologies are shown in Table 1.
表1、GIS局部放电故障定位技术研究方法:Table 1. Research methods of GIS partial discharge fault location technology:
实用新型内容Utility model content
本实用新型的目的在于,针对上述问题,提出一种基于柔性压电薄膜材料监测GIS局部放电位置的系统,以实现快速准确的找到放电位置的优点。The purpose of this utility model is to solve the above problems and propose a system for monitoring the partial discharge position of GIS based on the flexible piezoelectric film material, so as to realize the advantage of quickly and accurately finding the discharge position.
为实现上述目的,本实用新型采用的技术方案是:For realizing above-mentioned object, the technical scheme that the utility model adopts is:
一种基于柔性压电薄膜材料监测GIS局部放电位置的系统,包括紧贴在GIS外壁上的声发射传感器、信号检测电路、信号处理电路、电源管理电路及报警电路,所述声发射传感器信号经信号检测电路传递给信号处理电路,所述电源管理电路提供直流电源,所述报警电路与信号处理电路电连接;A system for monitoring the partial discharge position of a GIS based on a flexible piezoelectric film material, comprising an acoustic emission sensor, a signal detection circuit, a signal processing circuit, a power management circuit and an alarm circuit that are closely attached to the outer wall of the GIS, and the signal of the acoustic emission sensor is passed through The signal detection circuit transmits to the signal processing circuit, the power management circuit provides a DC power supply, and the alarm circuit is electrically connected to the signal processing circuit;
所述信号检测电路包括电荷变换单元、预放大单元、滤波单元、后置放大单元和有效值转换单元;所述电荷变换单元、预放大单元、滤波单元、后置放大单元和有效值转换单元依次串联。The signal detection circuit includes a charge conversion unit, a pre-amplification unit, a filter unit, a post-amplification unit and an effective value conversion unit; the charge conversion unit, the pre-amplification unit, the filter unit, the post-amplification unit and the effective value conversion unit in turn in series.
进一步的,所述声发射传感器采用PVDF压电薄膜材料。Further, the acoustic emission sensor uses PVDF piezoelectric film material.
进一步的,所述电荷变换单元,包括运放器U8、电阻R8、电容C8、电阻R18、电容C7和电阻R6,所述电阻R8、电容C8和电阻R18串联在运放器U8的反相输入端,所述电阻R6一端连接到a节点上,电阻R6的另一端与运放器U8的输出端连接,所述电容C7一端连接到b节点上,该电容C7的另一端与运放器U8的输出端连接。Further, the charge conversion unit includes an operational amplifier U8, a resistor R8, a capacitor C8, a resistor R18, a capacitor C7 and a resistor R6, and the resistor R8, capacitor C8 and resistor R18 are connected in series to the inverting input of the operational amplifier U8 One end of the resistor R6 is connected to the a node, the other end of the resistor R6 is connected to the output terminal of the operational amplifier U8, one end of the capacitor C7 is connected to the b node, and the other end of the capacitor C7 is connected to the operational amplifier U8 output connection.
进一步的,所述预放大单元包括运放器U7、电阻R26、电阻R7和可调电阻R29,所述电阻R26串联在运放器U7的反相输入端,所述电阻R7一端与运放器U7的反相输入端连接,该电阻R7的另一端与运放器U7的输出端连接,所述可调电阻R29为失调电压补偿变阻器,该可调电阻R29的两个固定端与运放器U7的两个电位调节端连接,该可调电阻R29的可调端与运放器U7的正相电压端连接。Further, the pre-amplification unit includes an op amp U7, a resistor R26, a resistor R7 and an adjustable resistor R29, the resistor R26 is connected in series with the inverting input terminal of the op amp U7, and one end of the resistor R7 is connected to the op amp The inverting input terminal of U7 is connected, and the other end of this resistor R7 is connected with the output terminal of operational amplifier U7, and described adjustable resistor R29 is offset voltage compensation rheostat, and the two fixed ends of this adjustable resistor R29 are connected with operational amplifier The two potential adjustment terminals of U7 are connected, and the adjustable terminal of the adjustable resistor R29 is connected with the positive-phase voltage terminal of the operational amplifier U7.
进一步的,所述滤波单元采用高通滤波电路和低通滤波电路叠加的电路,所述高通滤波电路包括运放器U6B、电容C41、电容C42和电阻R21,所述电容C41和电容C42串联在运放器U6B的同相输入端,所述电阻R21串联在运放器U6B的反相输入端和运放器U6B的输出端之间;Further, the filter unit adopts a superimposed circuit of a high-pass filter circuit and a low-pass filter circuit, and the high-pass filter circuit includes an operational amplifier U6B, a capacitor C41, a capacitor C42 and a resistor R21, and the capacitor C41 and the capacitor C42 are connected in series in the operational The non-inverting input terminal of the amplifier U6B, the resistor R21 is connected in series between the inverting input terminal of the operational amplifier U6B and the output terminal of the operational amplifier U6B;
所述低通滤波电路包括运放器U6A、电容C39、电容C37、电容C40和电阻R5,所述电容C39和电容C37串联在运放器U6A的同相输入端和运放器U6A的输出端之间,所述电容C40与运放器U6A的输出端串联,所述电阻R5串联在运放器U6A的反相输入端和运放器U6A的输出端之间。The low-pass filter circuit includes an operational amplifier U6A, a capacitor C39, a capacitor C37, a capacitor C40 and a resistor R5, and the capacitor C39 and the capacitor C37 are connected in series between the non-inverting input terminal of the operational amplifier U6A and the output terminal of the operational amplifier U6A Between, the capacitor C40 is connected in series with the output terminal of the operational amplifier U6A, and the resistor R5 is connected in series between the inverting input terminal of the operational amplifier U6A and the output terminal of the operational amplifier U6A.
进一步的,所述后置放大单元包括运放器U10、电阻R62和电阻R61、所述电阻R62串联在运放器U10的反相输入端与运放器U10的输出端间,所述电阻R61与运放器U10的反相输入端串联。Further, the post-amplification unit includes an operational amplifier U10, a resistor R62 and a resistor R61, the resistor R62 is connected in series between the inverting input terminal of the operational amplifier U10 and the output terminal of the operational amplifier U10, and the resistor R61 Connect in series with the inverting input of op amp U10.
进一步的,所述有效值转换单元采用AD637有效值转换芯片。Further, the effective value conversion unit adopts AD637 effective value conversion chip.
进一步的,所述信号处理电路采用单片机。Further, the signal processing circuit adopts a single-chip microcomputer.
本实用新型的技术方案具有以下有益效果:The technical solution of the utility model has the following beneficial effects:
本实用新型的技术方案采用声发射传感器、信号检测电路、信号处理电路、电源管理电路及报警电路、信号处理电路对GIS局部放电位置进行检测,实现快速准确的找到放电位置的目的。The technical scheme of the utility model adopts acoustic emission sensor, signal detection circuit, signal processing circuit, power management circuit, alarm circuit, and signal processing circuit to detect the partial discharge position of GIS, so as to realize the purpose of quickly and accurately finding the discharge position.
PVDF压电薄膜材料制成的超声波探头具有灵敏度高,抗过载,抗干扰性好、操作简便、体积小、重量轻等优点。The ultrasonic probe made of PVDF piezoelectric film material has the advantages of high sensitivity, anti-overload, good anti-interference, easy operation, small size and light weight.
下面通过附图和实施例,对本实用新型的技术方案做进一步的详细描述。The technical solutions of the present utility model will be further described in detail through the drawings and embodiments below.
附图说明Description of drawings
图1为现有GIS气隔单元结构原理示意图;Figure 1 is a schematic diagram of the structure principle of the existing GIS air separation unit;
图2为GIS圆桶结构分析模型中探针放置位置示意图;Fig. 2 is a schematic diagram of the placement position of the probe in the GIS cylinder structural analysis model;
图3a至图3g为图中中探针A点至G点的声压与频率关系变化图;Fig. 3 a to Fig. 3 g are the sound pressure and the frequency change diagram of the middle probe A point to G point in the figure;
图4为本实用新型实施例所述的基于柔性压电薄膜材料监测GIS局部放电位置的系统原理框图;Fig. 4 is the functional block diagram of the system based on flexible piezoelectric film material monitoring GIS partial discharge position described in the embodiment of the present invention;
图5为GIS局部放电位置检测示意图;Fig. 5 is a schematic diagram of GIS partial discharge position detection;
图6为本实用新型实施例所述的电荷变换单元的电子电路图;6 is an electronic circuit diagram of the charge conversion unit described in the embodiment of the present invention;
图7为本实用新型实施例所述的预放大单元的电子电路图;7 is an electronic circuit diagram of the pre-amplification unit described in the embodiment of the present invention;
图8为本实用新型实施例所述的高通滤波电路的电子电路图;8 is an electronic circuit diagram of the high-pass filter circuit described in the embodiment of the present invention;
图9为本实用新型实施例所述的低通滤波电路的电子电路图;9 is an electronic circuit diagram of the low-pass filter circuit described in the embodiment of the present invention;
图10为本实用新型实施例所述的后置放大单元的电子电路图;Fig. 10 is an electronic circuit diagram of the rear amplification unit described in the embodiment of the present invention;
图11为本实用新型实施例所述的有效值转换单元的电子电路图;Fig. 11 is the electronic circuit diagram of the effective value conversion unit described in the embodiment of the present invention;
图12为本实用新型实施例所述的5v电源转换电路的电子电路图;Fig. 12 is the electronic circuit diagram of the 5v power conversion circuit described in the embodiment of the present invention;
图13为本实用新型实施例所述的3.3v电源转换电路的电子电路图;Fig. 13 is the electronic circuit diagram of the 3.3v power conversion circuit described in the embodiment of the present invention;
图14为本实用新型实施例所述的-5v电源转换电路的电子电路图;Fig. 14 is the electronic circuit diagram of the -5v power conversion circuit described in the embodiment of the present invention;
图15为本实用新型实施例所述的报警电路的电子电路图。Fig. 15 is an electronic circuit diagram of the alarm circuit described in the embodiment of the present invention.
结合附图,本实用新型实施例中附图标记如下:In conjunction with the accompanying drawings, reference signs are as follows in the utility model embodiment:
1-导电杆;2-盆式绝缘子;3-GIS外壳;4-故障气室;5-环氧盘式绝缘子;6-铝合金圆柱桶;7-金属导电杆;8-六氟化硫气体;9-声源。1-conductive rod; 2-basin insulator; 3-GIS shell; 4-fault chamber; 5-epoxy disc insulator; 6-aluminum alloy cylindrical barrel; 7-metal conductive rod; 8-sulfur hexafluoride gas ; 9 - sound source.
具体实施方式Detailed ways
以下结合附图对本实用新型的优选实施例进行说明,应当理解,此处所描述的优选实施例仅用于说明和解释本实用新型,并不用于限定本实用新型。The preferred embodiments of the present utility model are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present utility model, and are not intended to limit the present utility model.
为了详细研究GIS圆桶结构内外的声场分布特性,在分析模型中放置探针计算该点的声压,在频率范围内,计算不同测量位置的声压分布。探针放置位置如图2所示。其中A、C、G位于铝合金圆桶的外表面,而且A、G位于点声源的上下方,C位于远离声源的左上方。E、F分别位于绝缘子的内外表面,B位于密闭铝合金圆桶内表面。D位于靠近声源与导电杆的位置。In order to study the sound field distribution characteristics inside and outside the GIS cylinder structure in detail, a probe is placed in the analysis model to calculate the sound pressure at this point, and the sound pressure distribution at different measurement positions is calculated within the frequency range. The location of the probe is shown in Figure 2. Among them, A, C, and G are located on the outer surface of the aluminum alloy drum, and A, G are located above and below the point sound source, and C is located on the upper left far away from the sound source. E and F are respectively located on the inner and outer surfaces of the insulator, and B is located on the inner surface of the airtight aluminum alloy drum. D is located close to the sound source and the conductive rod.
通过上图3a和图3g可以看出,GIS内外部声信号分布规律如下:From Figure 3a and Figure 3g above, it can be seen that the distribution of internal and external acoustic signals in GIS is as follows:
1)GIS壳体内外声压分布1) Sound pressure distribution inside and outside the GIS shell
对比A、B两点的声压值,A点的声压比B点的小,在低频范围内(10-30kHz)相差很大(80-100dB),而在高频(40-200kHz)A点的声压与B点的声压相差减小到20-40dB,这表明铝合金外壳内表面的声强比铝合金外壳外表面的大,相对于在内部直接测量放电的声压强,在GIS外壳中测量放电需要更高灵敏度的传感器,或者需要将外壳表面的信号放大,才能获得与内部测量的声强在同一数量级。Comparing the sound pressure values of points A and B, the sound pressure of point A is smaller than that of point B, and there is a large difference (80-100dB) in the low frequency range (10-30kHz), while in the high frequency (40-200kHz) A The difference between the sound pressure at point B and the sound pressure at point B is reduced to 20-40dB, which indicates that the sound intensity on the inner surface of the aluminum alloy shell is greater than that on the outer surface of the aluminum alloy shell. Measuring the discharge in the enclosure requires a sensor with higher sensitivity, or the signal on the surface of the enclosure needs to be amplified to obtain the same order of magnitude as the sound intensity measured inside.
2)GIS壳体表面声压分布2) Sound pressure distribution on the surface of the GIS shell
对比A、C、G三点的声压值,可以看出A点的声压比C点大(约2-10dB),这说明声波在固体铝合金外壳中传播发生衰减。通过超声波传感器的信号大小可以沿GIS桶壁定性确认传感器距离放电声源的远近。其次A点的声压与G点相比,基本相近,这说明在GIS铝合金外壳上同一位置的半径方向上,传感器获取的信号基本相等,不能区别放电声源的位置。Comparing the sound pressure values at points A, C, and G, it can be seen that the sound pressure at point A is higher than that at point C (about 2-10dB), which means that the sound wave is attenuated when propagating in the solid aluminum alloy shell. The signal size of the ultrasonic sensor can be used to qualitatively confirm the distance between the sensor and the discharge sound source along the wall of the GIS barrel. Secondly, the sound pressure at point A is basically similar to that at point G, which means that in the radial direction of the same position on the GIS aluminum alloy shell, the signals acquired by the sensor are basically equal, and the position of the discharge sound source cannot be distinguished.
3)绝缘盆子两侧声压分布3) Sound pressure distribution on both sides of the insulating basin
对比E、F两点的声压值,在低频(1-20kHz)范围内,可以看出F点的声压远比E点小(衰减接近120dB),但在超声(20-200kHz)范围内,F点的声压尽管比E点小,但仅衰减了大约50dB,这表明放电发出的音频声波经过环氧绝缘子后,衰减十分严重。Comparing the sound pressure values of points E and F, in the range of low frequency (1-20kHz), it can be seen that the sound pressure of point F is much smaller than that of point E (the attenuation is close to 120dB), but in the range of ultrasonic (20-200kHz) , although the sound pressure at point F is smaller than that at point E, it only attenuates by about 50dB, which shows that the audio sound waves emitted by the discharge are attenuated very seriously after passing through the epoxy insulator.
4)GIS内部声压分布4) GIS internal sound pressure distribution
对比同样位于密闭声场内的D、E两点的声压值,可以看出D点的声压远比E点大(约3-5dB),这表明放电发出的声波在六氟化硫气体中传播,有一定衰减。Comparing the sound pressure values of points D and E, which are also located in the closed sound field, it can be seen that the sound pressure of point D is much higher than that of point E (about 3-5dB), which shows that the sound waves emitted by the discharge are in the sulfur hexafluoride gas. propagation with some attenuation.
如图4所示,一种基于柔性压电薄膜材料监测GIS局部放电位置的系统,包括紧贴在GIS外壁上的声发射传感器、信号检测电路、信号处理电路、电源管理电路及报警电路,声发射传感器信号经信号检测电路传递给信号处理电路,电源管理电路提供直流电源,报警电路与信号处理电路电连接;As shown in Fig. 4, a system based on flexible piezoelectric film material to monitor the partial discharge position of GIS, including acoustic emission sensor, signal detection circuit, signal processing circuit, power management circuit and alarm circuit, which is closely attached to the outer wall of GIS, The transmitting sensor signal is transmitted to the signal processing circuit through the signal detection circuit, the power management circuit provides DC power, and the alarm circuit is electrically connected to the signal processing circuit;
信号检测电路包括电荷变换单元、预放大单元、滤波单元、后置放大单元和有效值转换单元;电荷变换单元、预放大单元、滤波单元、后置放大单元和有效值转换单元依次串联。The signal detection circuit includes a charge conversion unit, a pre-amplification unit, a filter unit, a post-amplification unit and an effective value conversion unit; the charge conversion unit, the pre-amplification unit, the filter unit, the post-amplification unit and the effective value conversion unit are connected in series in sequence.
声发射传感器采用PVDF压电薄膜材料。分布在GIS的多个气室内。该PVDF压电薄膜的是一种3层结构的薄膜,PVDF感芯的上下表面已覆盖了很薄的铝电极,厚度为230微米,在实际运用中,PVDF压电薄膜的形状根据需要而裁剪,这势必会引起薄膜边缘有瑕疵,而且也容易受到外界的电子干扰从而造成测量的不准确,影响其检测的效果。因此,为了提高压电薄膜的耐久性与稳定性,PVDF压电薄膜必须经过封装。The acoustic emission sensor uses PVDF piezoelectric film material. Distributed in multiple gas chambers of the GIS. The PVDF piezoelectric film is a three-layer film. The upper and lower surfaces of the PVDF sensing core have been covered with very thin aluminum electrodes, with a thickness of 230 microns. In practical applications, the shape of the PVDF piezoelectric film can be tailored according to needs. , which will inevitably cause flaws on the edge of the film, and it is also susceptible to external electronic interference, which will cause inaccurate measurement and affect the detection effect. Therefore, in order to improve the durability and stability of the piezoelectric film, the PVDF piezoelectric film must be encapsulated.
利用PVDF压电薄膜制作传感器的主要工艺流程主要分为:确定所需形状、切割、边缘处理、非金属化边缘、引出电极和加保护层。The main technological process of making sensors with PVDF piezoelectric film is mainly divided into: determining the required shape, cutting, edge treatment, non-metallized edge, extracting electrodes and adding a protective layer.
(1)边缘处理(1) Edge processing
把PVDF压电薄膜裁剪成3cm*1cm的长方形形状,而在裁剪过程中,铝电极的边缘上很容易留下许多的金属毛刺,这样会导致PVDF压电薄膜在厚度方向上发生短路,继而影响了传感器的工作效果。所以,在对PVDF压电薄膜进行裁剪的时候,边缘的平整度是很重要的。为了防止毛刺对检测效果产生影响,采用丙酮和酒精作为腐蚀剂,腐蚀掉薄膜边缘可能连通的电极毛刺,这样就完成了对PVDF压电薄膜的边缘做非金属化处理,最后用万用表检测薄膜在厚度上是否发生短路,以保证腐蚀的效果。Cut the PVDF piezoelectric film into a rectangular shape of 3cm*1cm, and during the cutting process, many metal burrs are easily left on the edge of the aluminum electrode, which will cause a short circuit in the thickness direction of the PVDF piezoelectric film, and then affect the the working effect of the sensor. Therefore, when cutting the PVDF piezoelectric film, the flatness of the edge is very important. In order to prevent the burrs from affecting the detection effect, acetone and alcohol are used as corrosive agents to corrode the electrode burrs that may be connected to the edge of the film. This completes the non-metallization of the edge of the PVDF piezoelectric film. Finally, a multimeter is used to detect the thickness of the film. Whether there is a short circuit on the circuit to ensure the effect of corrosion.
(2)引出导线(2) lead wire
因为PVDF压电薄膜的厚度非常小,而且柔性很大,表面的电极很薄,所以常规的焊接等方式并不适用于PVDF压电薄膜。本技术方案中,为了防止由于引线接点的影响使得传感器出现问题,是把传感器的上下两个极面同向同面引出,这样,可以方便引出导线和屏蔽线的连接,继而能保障电荷信号在最大限度上不受干扰地进入调理电路。采用的方式是实验室中容易做到的穿透式,即用压接端子压接和空心的小铆钉铆接的两种方式。Because the thickness of the PVDF piezoelectric film is very small, and it is very flexible, and the electrodes on the surface are very thin, so conventional methods such as welding are not suitable for PVDF piezoelectric films. In this technical solution, in order to prevent the sensor from having problems due to the influence of the lead wire contact, the upper and lower poles of the sensor are drawn out in the same direction, so that the connection of the lead wire and the shielding wire can be facilitated, and then the charge signal can be guaranteed. Maximum uninterrupted access to conditioning circuits. The method adopted is the penetrating type that is easy to do in the laboratory, that is, two methods of crimping with crimping terminals and riveting with small hollow rivets.
(3)加保护层(3) Add protective layer
为了避免电极被破坏,而且防止传感器受到外界噪声的干扰,为传感器加上保护层是十分必要的。由于PVDF压电薄膜是弹性极好的薄膜材料,而且压电材料在受到较大应变时会产生较强的信号,这样便于接收,所以封装的材料必须具有足够的弹性,才不会影响传感器的性能,保证传感器能够最大限度地传递传感的信息;再者,PVDF压电薄膜是属于高内阻弱信号的传感器,因其灵敏度非常高,所以对外界的干扰反应的非常明显,例如人说话的声音信号、工频信号等等。所以这也要求了封装材料的绝缘性能要良好;最后,由于PVDF压电薄膜的厚度非常小,那么对薄膜封装的材料也不能厚,要保证传感器的优越性能。通过上述分析,本技术方案对传感器的封装材料选取的是UV树脂,在薄膜材料上下粘贴一层厚度为8微米的聚乙烯薄膜,然后用紫外灯光进行照射,固化之后效果很好。另一方面,为了防止表面引出的导线发生损坏而导致传感器接触不良和为了保证PVDF压电薄膜传感器在弯曲的时候也能够输出稳定的信号,在电极和引线的连接处用硅胶覆盖。对于薄膜的有效面积与引出电极部分,选择分开封装,因为两者的厚度不同,为了最大限度的减少外部的干扰,保证输出信号的稳定性,分开封装的效果更好。In order to prevent the electrodes from being damaged and to prevent the sensor from being disturbed by external noise, it is very necessary to add a protective layer to the sensor. Since the PVDF piezoelectric film is a film material with excellent elasticity, and the piezoelectric material will generate a strong signal when it is subjected to a large strain, which is easy to receive, so the packaging material must have sufficient elasticity so as not to affect the sensor. performance, to ensure that the sensor can transmit the sensing information to the maximum; moreover, PVDF piezoelectric film is a sensor with high internal resistance and weak signal, because of its high sensitivity, it responds very obviously to external interference, such as people talking sound signals, power frequency signals, etc. Therefore, this also requires good insulation performance of the packaging material; finally, since the thickness of the PVDF piezoelectric film is very small, the material for the film packaging should not be thick, so as to ensure the superior performance of the sensor. Through the above analysis, this technical solution selects UV resin as the packaging material of the sensor, pastes a layer of polyethylene film with a thickness of 8 microns on the top and bottom of the film material, and then irradiates with ultraviolet light, and the effect is very good after curing. On the other hand, in order to prevent the wires drawn from the surface from being damaged and cause poor sensor contact and to ensure that the PVDF piezoelectric film sensor can output a stable signal when it is bent, the connection between the electrodes and the leads is covered with silicone. For the effective area of the film and the lead-out electrode part, choose to package separately, because the thickness of the two is different, in order to minimize external interference and ensure the stability of the output signal, the effect of separate packaging is better.
(4)电磁屏蔽问题(4) Electromagnetic shielding problem
由于压电薄膜的本性是容性的,所以抗电磁干扰的能力不强,在输出信号很高或者在数据精度要求不高的情况下可以不予考虑。但是,本技术方案中,通过实验得知,测得的超声波信号的数量级为毫伏级,所以对于电磁干扰需要采取措施来屏蔽。采取的措施是加屏蔽器件和使用同轴电缆。需要主要的是,引线和同轴电缆的连接必须要加固,防止因为振动而给传感器带来声音干扰。Since the nature of the piezoelectric film is capacitive, the ability to resist electromagnetic interference is not strong, and it can be ignored when the output signal is very high or the data accuracy is not high. However, in this technical solution, it is known through experiments that the magnitude of the measured ultrasonic signal is at the millivolt level, so measures need to be taken to shield electromagnetic interference. The measures taken are to add shielding devices and use coaxial cables. The main thing is that the connection between the lead wire and the coaxial cable must be reinforced to prevent the sensor from causing acoustic interference due to vibration.
所制作的传感器的基本性能指标见表二,The basic performance indicators of the fabricated sensors are shown in Table 2.
表二、传感器主要性能指标表:Table 2. The main performance indicators of the sensor:
如图6所示,电荷变换单元,包括运放器U8、电阻R8、电容C8、电阻R18、电容C7和电阻R6,电阻R8、电容C8和电阻R18串联在运放器U8的反相输入端,电阻R6一端连接到a节点上,电阻R6的另一端与运放器U8的输出端连接,电容C7一端连接到b节点上,该电容C7的另一端与运放器U8的输出端连接。As shown in Figure 6, the charge conversion unit includes an operational amplifier U8, a resistor R8, a capacitor C8, a resistor R18, a capacitor C7 and a resistor R6, and the resistor R8, capacitor C8 and resistor R18 are connected in series at the inverting input terminal of the operational amplifier U8 , one end of the resistor R6 is connected to node a, the other end of the resistor R6 is connected to the output end of the operational amplifier U8, one end of the capacitor C7 is connected to the node b, and the other end of the capacitor C7 is connected to the output end of the operational amplifier U8.
PVDF压电薄膜传感器属于电容性传感器,其输出信号为与输入超声波振动信号成比例的电荷量,实际电路中,电荷量由于阻抗过高而无法直接检测。只有将电荷量转换为相应的电压量才能进一步检测,为此设计了此电荷变换电路。此电荷变换电路由运算放大器LF356N、精密电阻、聚苯乙烯电容等组成,其中,LF356N运算放大器具有高输入阻抗、低失调和偏置电压、高共模抑制比、高增益带宽积和大的直流电压增益等优点。非常适合用于电荷变换电路。The PVDF piezoelectric film sensor is a capacitive sensor, and its output signal is a charge proportional to the input ultrasonic vibration signal. In the actual circuit, the charge cannot be directly detected because the impedance is too high. Only by converting the amount of charge into the corresponding voltage can it be further detected, and this charge conversion circuit is designed for this purpose. This charge conversion circuit is composed of operational amplifier LF356N, precision resistors, polystyrene capacitors, etc. Among them, the LF356N operational amplifier has high input impedance, low offset and bias voltage, high common mode rejection ratio, high gain bandwidth product and large DC Advantages such as voltage gain. Ideal for use in charge conversion circuits.
为了保证电荷变换电路转换精度,选用相应的反馈电容和电阻时必须选取高精度的电容电阻。这里选用金属薄膜电阻和精密聚苯乙烯电容,精度为0.5%。In order to ensure the conversion accuracy of the charge conversion circuit, high-precision capacitance and resistance must be selected when selecting the corresponding feedback capacitance and resistance. Here we use metal film resistors and precision polystyrene capacitors with an accuracy of 0.5%.
其中,电阻R18的取值决定电路对高频信号的响应;电阻R6的取值决定电路对低频信号的响应特点。电容C7为反馈电容。Among them, the value of resistor R18 determines the response of the circuit to high-frequency signals; the value of resistor R6 determines the response characteristics of the circuit to low-frequency signals. Capacitor C7 is a feedback capacitor.
如图7所示,预放大单元包括运放器U7、电阻R26、电阻R7和可调电阻R29,电阻R26串联在运放器U7的反相输入端,电阻R7一端与运放器U7的反相输入端连接,该电阻R7的另一端与运放器U7的输出端连接,可调电阻R29为失调电压补偿变阻器,该可调电阻R29的两个固定端与运放器U7的两个电位调节端连接,该可调电阻R29的可调端与运放器U7的正相电压端连接。As shown in Figure 7, the pre-amplification unit includes operational amplifier U7, resistor R26, resistor R7 and adjustable resistor R29. The resistor R26 is connected in series with the inverting input terminal of the operational amplifier U7, and one end of the resistor R7 is connected to the negative input terminal of the operational amplifier U7. The other end of the resistor R7 is connected to the output terminal of the op amp U7, the adjustable resistor R29 is an offset voltage compensation rheostat, the two fixed ends of the adjustable resistor R29 are connected to the two potentials of the op amp U7 The adjustable end of the adjustable resistor R29 is connected to the positive phase voltage end of the operational amplifier U7.
经过电荷变换之后,完成了信号的阻抗变换和信号变换,将电荷信号转换为对应的电压信号。但由于变换之后的信号较弱,为了获得较高的信噪比,需对该信号进行一定的预放大处理。将有用信号放大,为后续滤波处理奠定基础。After the charge transformation, the impedance transformation and signal transformation of the signal are completed, and the charge signal is converted into a corresponding voltage signal. However, since the converted signal is weak, in order to obtain a higher signal-to-noise ratio, the signal needs to be pre-amplified to a certain extent. Amplify useful signals to lay the foundation for subsequent filtering.
预放大电路设计主要应考虑运放特性。本技术方案设计选取的运放芯片为LF356N,其具有增益带宽积5MHZ,高输入阻抗,低偏置和失调电压等优点。特别是增益带宽积满足预放大电路的实际要求。故而选取此运放为预放大电路芯片。在电路设计上,采用标准的反向比例放大电路,放大倍数为2倍。中,电阻R7为反馈电阻,可调电阻R29为失调电压补偿变阻器,调节零位输出。电容C36,电容C38为电源滤波电容。The design of the pre-amplification circuit should mainly consider the characteristics of the operational amplifier. The operational amplifier chip selected in this technical solution design is LF356N, which has the advantages of gain bandwidth product 5MHZ, high input impedance, low bias and offset voltage, etc. In particular, the gain-bandwidth product meets the actual requirements of the pre-amplification circuit. Therefore, this operational amplifier is selected as the pre-amplification circuit chip. In the circuit design, a standard inverse proportional amplification circuit is adopted, and the amplification factor is 2 times. Among them, the resistor R7 is the feedback resistor, and the adjustable resistor R29 is the offset voltage compensation rheostat to adjust the zero output. Capacitor C36 and capacitor C38 are power filter capacitors.
信号采集电路时,不仅要考虑如何采集到有用的信号,也要考虑如何滤除来自现场和电路本身的杂波干扰等问题。GIS设备使用现场工作环境复杂,各种噪声如机械振动、冲击、人员活动声响以及来自电路的工频干扰等无不对设备正常、准确工作造成影响。为了消除来自现场的高频和低频干扰,特别设计信号滤波电路。When signal acquisition circuit, we should not only consider how to acquire useful signals, but also how to filter out the clutter interference from the scene and the circuit itself. The on-site working environment of GIS equipment is complex, and various noises such as mechanical vibration, impact, sound of personnel activities, and power frequency interference from circuits all affect the normal and accurate operation of the equipment. In order to eliminate high-frequency and low-frequency interference from the scene, a signal filter circuit is specially designed.
滤波电路在设计时主要考虑一下内容:When designing the filter circuit, the main considerations are as follows:
首先,滤波电路对低频干扰的有效滤除。由于GIS设备既有在室内的也有在室外安装的,GIS工作时周围环境噪声无法屏蔽,如果不在检测电路中将这些环境干扰信号有效滤除,就会影响到GIS闪络故障定位检测器的工作,进而引起GIS闪络故障定位器误动作。First of all, the filter circuit effectively filters out low-frequency interference. Since GIS equipment is installed both indoors and outdoors, the ambient noise cannot be shielded when GIS is working. If these environmental interference signals are not effectively filtered out in the detection circuit, it will affect the work of the GIS flashover fault location detector. , And then cause the GIS flashover fault locator to malfunction.
其次,滤波电路对电磁波信号的有效滤除。GIS闪络故障发生时不仅产生大量低频信号分量,也产生了大量高频电磁波分量。在实际试验探究过程中发现,检测传感器引出的线缆犹如一根天线,将电磁波信号引入到了检测电路中,对此干扰信号也要有效的滤除才可避免信号采集的失真。Secondly, the filter circuit effectively filters out the electromagnetic wave signal. When a GIS flashover fault occurs, not only a large number of low-frequency signal components, but also a large number of high-frequency electromagnetic wave components are generated. During the actual experiment and exploration process, it was found that the cable leading out of the detection sensor is like an antenna, which introduces the electromagnetic wave signal into the detection circuit, and the interference signal must be effectively filtered to avoid the distortion of signal acquisition.
综上所述,在滤波电路设计中选用了高通滤波电路和低通滤波电路叠加而形成带通滤波电路。每一级滤波电路阶数设计为二阶电路,以使滤波电路衰减倍数在40dB,有效滤除信号干扰,滤波电路设计如下:To sum up, in the filter circuit design, a high-pass filter circuit and a low-pass filter circuit are superimposed to form a band-pass filter circuit. The order of each filter circuit is designed as a second-order circuit, so that the attenuation factor of the filter circuit is 40dB, and the signal interference is effectively filtered out. The filter circuit design is as follows:
滤波单元采用高通滤波电路和低通滤波电路叠加的电路,如图8所示,高通滤波电路包括运放器U6B、电容C41、电容C42和电阻R21,电容C41和电容C42串联在运放器U6B的同相输入端,电阻R21串联在运放器。The filter unit adopts a superimposed circuit of a high-pass filter circuit and a low-pass filter circuit, as shown in Figure 8, the high-pass filter circuit includes an operational amplifier U6B, a capacitor C41, a capacitor C42 and a resistor R21, and the capacitor C41 and capacitor C42 are connected in series in the operational amplifier U6B The non-inverting input terminal, the resistor R21 is connected in series with the op amp.
运放选取TL062C,该运放为高速运放,摆率3.5V/us,适合作为滤波电路运放。The op amp is TL062C, which is a high-speed op amp with a slew rate of 3.5V/us, suitable for use as a filter circuit op amp.
如图9所示,低通滤波电路包括运放器U6A、电容C39、电容C37、电容C40和电阻R5,电容C39和电容C37串联在运放器U6A的同相输入端和运放器U6A的输出端之间,电容C40与运放器U6A的输出端串联,电阻R5串联在运放器U6A的反相输入端和运放器U6A的输出端之间。As shown in Figure 9, the low-pass filter circuit includes an operational amplifier U6A, a capacitor C39, a capacitor C37, a capacitor C40 and a resistor R5, and the capacitor C39 and capacitor C37 are connected in series at the non-inverting input terminal of the operational amplifier U6A and the output of the operational amplifier U6A Between terminals, the capacitor C40 is connected in series with the output terminal of the operational amplifier U6A, and the resistor R5 is connected in series between the inverting input terminal of the operational amplifier U6A and the output terminal of the operational amplifier U6A.
其中,C2,C3为低通滤波电路中不同阻值的网络标号。代表数值为30K,20K,10K,6.2K,3K。对应信号截止频率为:995.2Hz,4.9KHz,9.6KHz,19.6KHz,30KHz。Among them, C2 and C3 are network labels of different resistance values in the low-pass filter circuit. Representative values are 30K, 20K, 10K, 6.2K, 3K. The corresponding signal cut-off frequencies are: 995.2Hz, 4.9KHz, 9.6KHz, 19.6KHz, 30KHz.
反向输入端信号放大倍数: Signal magnification at the reverse input terminal:
C35,C37为电源滤波电路。滤除电源杂波干扰。C35 and C37 are power filter circuits. Filter out power clutter interference.
经过滤波之后的信号幅度较小,为了提高检测信号的量程,需对信号进一步放大。放大倍数确定需要考虑运放增益带宽积。LF356N运放增益带宽积在5MHZ,对于信号10倍放大完全没有问题,故而此处确定后置放大电路放大倍数为10倍。The amplitude of the signal after filtering is relatively small. In order to increase the range of the detection signal, the signal needs to be further amplified. The determination of the amplification factor needs to consider the gain-bandwidth product of the op amp. The LF356N operational amplifier gain-bandwidth product is 5MHZ, and there is no problem with the 10-fold amplification of the signal, so the magnification of the post-amplification circuit is determined to be 10 times here.
如图10所示,后置放大单元包括运放器U10、电阻R62和电阻R61、电阻R62串联在运放器U10的反相输入端与运放器U10的输出端间,电阻R61与运放器U10的反相输入端串联。As shown in Figure 10, the post-amplification unit includes an operational amplifier U10, a resistor R62 and a resistor R61, and the resistor R62 is connected in series between the inverting input terminal of the operational amplifier U10 and the output terminal of the operational amplifier U10, and the resistor R61 and the operational amplifier The inverting input of device U10 is connected in series.
电阻R62为反馈电阻,电阻R63为零位输出调节电位器,电容C44,电容C43为电源滤波电容。Resistor R62 is a feedback resistor, resistor R63 is a zero output adjustment potentiometer, capacitor C44, and capacitor C43 are power filter capacitors.
如图11所示,经过后置放大电路之后的信号仍为双极性信号,为了便于单片机采集和处理,同时对信号进行有效值转换处理,选用AD637有效值转换芯片构成有效值转换电路。As shown in Figure 11, the signal after the post-amplification circuit is still a bipolar signal. In order to facilitate the acquisition and processing of the single-chip microcomputer, and at the same time perform effective value conversion processing on the signal, the AD637 effective value conversion chip is selected to form the effective value conversion circuit.
电容C17为外部电容,用以设定信号平均时间的长短。本技术方案选用1nF的小电容,便于捕捉到瞬时变化的信号。电容C14为隔直电容,隔除后置放大之后产生的直流偏置信号。Capacitor C17 is an external capacitor, which is used to set the average time of the signal. This technical solution selects a small capacitor of 1nF, which is convenient for capturing instantaneously changing signals. The capacitor C14 is a DC blocking capacitor, which blocks the DC bias signal generated after the post-amplification.
电阻R16,电容C16为无源低通滤波单元。对AD637输出信号进行低通滤波处理。使输出信号更平滑。The resistor R16 and the capacitor C16 are passive low-pass filter units. Perform low-pass filtering on the AD637 output signal. Make the output signal smoother.
信号处理电路主要由单片机构成。主要完成的功能有:信号A/D转换、采集数据的处理等。并连接显示单元。The signal processing circuit is mainly composed of a single-chip computer. The main functions are: signal A/D conversion, processing of collected data, etc. And connect the display unit.
电源管理电路power management circuit
信号处理电路采用充电电池供电,供电电压在7.2V。由于内部集成芯片工作电压为+5V、+3.3V等,所以需要对输入电源进行电压转换,如图12所示,LM2940具有电源转换的功能,可以实现将输入6.25V~26V范围的电压转换为+5V的电压输出。同时输出电流超过1A,足可以满足本电路要求。而且其工作温度和储存温度都在-40oC~85oC,满足工业要求。需要注意的是,此处通过电阻R14,电阻R15将模拟地和数字地分开,避免了相互之间的干扰。电容在这里起滤波的作用。The signal processing circuit is powered by a rechargeable battery, and the power supply voltage is 7.2V. Since the working voltage of the internal integrated chip is +5V, +3.3V, etc., it is necessary to perform voltage conversion on the input power supply. As shown in Figure 12, the LM2940 has the function of power conversion, which can convert the input voltage range from 6.25V to 26V to +5V voltage output. At the same time, the output current exceeds 1A, which is sufficient to meet the requirements of this circuit. And its working temperature and storage temperature are -40oC ~ 85oC, meet the industrial requirements. It should be noted that the analog ground and the digital ground are separated by resistors R14 and R15 to avoid mutual interference. The capacitor acts as a filter here.
如图13所示,ASM1117芯片和LM2940芯片的功能相似,起到了电源转换的作用。由于C8051工作电压范围在2.7V~3.6V,需要将+5V的电压转换为+3.3V,电容在这里起滤波作用。通过电阻R16将模拟地和数字地相区分。LED0为电路工作状态指示灯,LED亮表示电路正常工作,不亮则表明电路存在问题,需要检查。As shown in Figure 13, the ASM1117 chip and the LM2940 chip have similar functions and play the role of power conversion. Since the operating voltage range of C8051 is 2.7V to 3.6V, it is necessary to convert the voltage of +5V to +3.3V, and the capacitor acts as a filter here. The analog ground and digital ground are distinguished by resistor R16. LED0 is the working status indicator of the circuit. When the LED is on, it means that the circuit is working normally. If it is not on, it means that there is a problem with the circuit and needs to be checked.
如图14所示,由于前端模拟运放采用双电源供电,需要-5V电压。故采用LMC7660IM电压转换芯片,实现将+5V电压转换为-5V电压。电容的作用也是滤波。As shown in Figure 14, since the front-end analog op amp is powered by dual power supplies, a -5V voltage is required. Therefore, the LMC7660IM voltage conversion chip is used to realize the conversion of +5V voltage into -5V voltage. The role of the capacitor is also filtering.
报警电路,如图15所示,在被检信号达到一定幅度后,需要采点亮用LED,输出光报警的方式,提示工作人员对被检段进行检查,图中的p2.3为单片机的I/O接口。The alarm circuit, as shown in Figure 15, after the detected signal reaches a certain level, it needs to light up the LED and output a light alarm to remind the staff to check the detected section. The p2.3 in the figure is the single chip microcomputer I/O interface.
最后应说明的是:以上所述仅为本实用新型的优选实施例而已,并不用于限制本实用新型,尽管参照前述实施例对本实用新型进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换。凡在本实用新型的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本实用新型的保护范围之内。Finally, it should be noted that: the above is only a preferred embodiment of the utility model, and is not intended to limit the utility model, although the utility model has been described in detail with reference to the foregoing embodiments, for those skilled in the art , it is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present utility model shall be included in the protection scope of the present utility model.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420341199.XU CN203965572U (en) | 2014-06-24 | 2014-06-24 | Based on the system of flexible piezoelectric membraneous material monitoring GIS partial discharge position |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420341199.XU CN203965572U (en) | 2014-06-24 | 2014-06-24 | Based on the system of flexible piezoelectric membraneous material monitoring GIS partial discharge position |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203965572U true CN203965572U (en) | 2014-11-26 |
Family
ID=51926135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201420341199.XU Expired - Lifetime CN203965572U (en) | 2014-06-24 | 2014-06-24 | Based on the system of flexible piezoelectric membraneous material monitoring GIS partial discharge position |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203965572U (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104792535A (en) * | 2015-04-13 | 2015-07-22 | 成都诚邦动力测试仪器有限公司 | Comprehensive performance testing system based on engine power testing |
CN110865284A (en) * | 2019-11-12 | 2020-03-06 | 云南电网有限责任公司临沧供电局 | Magnetic attraction type capacitance probe based on polyvinylidene fluoride film |
CN114509651A (en) * | 2022-04-15 | 2022-05-17 | 湖北工业大学 | GIS partial discharge external ultrasonic and ultrahigh frequency integrated sensor and detection method |
CN116381430A (en) * | 2023-04-06 | 2023-07-04 | 北京西能电子科技发展有限公司 | Novel ultrahigh frequency-piezoelectric ultrasonic integrated sensing device and application thereof |
-
2014
- 2014-06-24 CN CN201420341199.XU patent/CN203965572U/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104792535A (en) * | 2015-04-13 | 2015-07-22 | 成都诚邦动力测试仪器有限公司 | Comprehensive performance testing system based on engine power testing |
CN110865284A (en) * | 2019-11-12 | 2020-03-06 | 云南电网有限责任公司临沧供电局 | Magnetic attraction type capacitance probe based on polyvinylidene fluoride film |
CN114509651A (en) * | 2022-04-15 | 2022-05-17 | 湖北工业大学 | GIS partial discharge external ultrasonic and ultrahigh frequency integrated sensor and detection method |
CN114509651B (en) * | 2022-04-15 | 2022-07-19 | 湖北工业大学 | GIS partial discharge external ultrasonic and UHF integrated sensor and detection method |
CN116381430A (en) * | 2023-04-06 | 2023-07-04 | 北京西能电子科技发展有限公司 | Novel ultrahigh frequency-piezoelectric ultrasonic integrated sensing device and application thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN201373895Y (en) | Zinc Oxide Arrester (MOA) Online Monitoring Device | |
CN203965572U (en) | Based on the system of flexible piezoelectric membraneous material monitoring GIS partial discharge position | |
CN103217571B (en) | Differential type D-dot voltage transformer and voltage detecting method thereof | |
CN106643929A (en) | Electrostatic sensor measuring circuit based on charge amplifier | |
CN101762355B (en) | On-line monitoring device and method for vacuum degree of vacuum tube of high-voltage power distribution device | |
CN105372483B (en) | A kind of radio-frequency voltage current sensing means | |
CN110361606A (en) | Leakage conductor on-line monitoring system | |
CN209264895U (en) | Partial discharge of switchgear monitoring device | |
CN106872795A (en) | A kind of system and method for being measured to transient state space electric field | |
CN102445608B (en) | Monitoring device and calibration method for electric energy quality | |
CN112083235A (en) | Power transmission line lower power frequency electric field strength measuring system | |
CN104062564A (en) | System for monitoring GIS partial discharge position based on flexible piezoelectric thin-film material | |
CN104678262A (en) | GIS (gas insulated switchgear) breakdown flashover fault gas chamber positioning method and instrument | |
CN2718591Y (en) | Dielectric loss on-line monitoring device for capacitive electric equipment | |
CN111856345A (en) | A broadband magnetic field sensor device and method for measuring impulse current | |
KR101130260B1 (en) | System for measuring ground impedance in high frequency band | |
Jun et al. | Design of a flexible rogowski coil with active integrator applied in lightning current collection | |
CN104391209A (en) | Device for measuring line status | |
CN102654530A (en) | High-voltage electrode discharge current measuring device | |
CN211718374U (en) | Current detection circuit and current detection equipment | |
CN205229289U (en) | Radio frequency voltage current detection device | |
Wang et al. | The measurement method for corona discharge current under high-voltage environment | |
Wang et al. | A portable industrial acoustic detection system with multiband resonant amplification | |
CN108061845B (en) | GIS partial discharge data acquisition device | |
CN207557052U (en) | A kind of plane capacitance array measurement device of Dual-Phrase Distribution of Gas olid Particle velocity |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term |
Granted publication date: 20141126 |
|
CX01 | Expiry of patent term |