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CN203896314U - L waveband radio-frequency power amplification module - Google Patents

L waveband radio-frequency power amplification module Download PDF

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Publication number
CN203896314U
CN203896314U CN201420220514.3U CN201420220514U CN203896314U CN 203896314 U CN203896314 U CN 203896314U CN 201420220514 U CN201420220514 U CN 201420220514U CN 203896314 U CN203896314 U CN 203896314U
Authority
CN
China
Prior art keywords
band
branch
amplification module
power amplification
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420220514.3U
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Chinese (zh)
Inventor
贾延波
卫波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harxon Corp
Original Assignee
Harxon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harxon Corp filed Critical Harxon Corp
Priority to CN201420220514.3U priority Critical patent/CN203896314U/en
Application granted granted Critical
Publication of CN203896314U publication Critical patent/CN203896314U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses an L waveband radio-frequency power amplification module. The L waveband radio-frequency power amplification module comprises single-pole double-throw switching switches SP2T1 and SP2T2, band-pass filters BPF1, BPF2, BPF3 and BPF4 and power amplifiers PA1, PA2, PA3 and PA4. A first branch of the SP2T1, the BPF1, the PA1, the PA2, the BPF2 and a first branch of the SP2T2 are connected in sequence. A second branch of the SP2T1, the BPF3, the PA3, the PA4, the BPF4 and a second branch of the SP2T2 are connected in sequence. The L waveband radio-frequency power amplification module is small in size and flexible in structure.

Description

L-band radio frequency power amplification module
Technical Field
The utility model relates to a signal processing field especially relates to a L wave band radio frequency power amplification module for big dipper navigation system transmitter.
Background
The power amplifier is a necessary module at the front end of the transmitter of the Beidou navigation system, the performance of the power amplifier directly influences the acting distance and the positioning function of the transmitter, the existing power amplifier is a Beidou single-frequency point amplifier, three-stage amplification is adopted to enable the gain to reach 40dB, the volume of the whole amplifier part is large, circuits are cascaded more, and the traditional amplifier chip has low self input and output impedance, complex peripheral matching circuit and difficult debugging, the complexity is enhanced after multi-stage cascade, and the instability of the system in a long-term working state is increased. Does not meet the requirements of new product universality and reliability.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a L wave band radio frequency power amplification module to improve the current power amplifier module bulky, the complicated problem of peripheral circuit.
The utility model discloses a L wave band radio frequency power amplification module, including single-pole double-throw change over switch SP2T1, SP2T2, band-pass filter BPF1, BPF2, BPF3, BPF4 to and power amplifier PA1, PA2, PA3, PA 4; as described above
The first branch of the single-pole double-throw switch SP2T1, the first branch of the band-pass filter BPF1, the power amplifiers PA1, PA2, the first branch of the band-pass filter BPF2 and the first branch of the single-pole double-throw switch SP2T2 are connected in sequence;
the second branch of the single-pole double-throw switch SP2T1, the band-pass filter BPF3, the power amplifiers PA3, PA4, the band-pass filter BPF4 and the second branch of the single-pole double-throw switch SP2T2 are connected in sequence.
Preferably, the band pass filters BPF1 and BPF3 are acoustic surface band pass filters.
Preferably, the band pass filters BPF2 and BPF4 are dielectric band pass filters.
Preferably, the power amplifiers PA1 and PA3 are driver-stage power amplifiers.
Preferably, the power amplifiers PA1 and PA3 are MMIC (Monolithic Microwave Integrated Circuit) power amplifier chips with a gain of 20dB from RFMD corporation.
Preferably, the power amplifiers PA2 and PA4 are MMIC power amplifier chips from the company innovation.
The utility model provides two independent amplifying links, any one path of fault can be automatically switched to the other path immediately; the two amplification links can meet the gain requirement of the Beidou navigation system transmitter by adopting two-stage amplification, and a special impedance matching circuit is not needed, so that the volume is reduced integrally, the structure is more flexible, the system is suitable for various application occasions, particularly for the situations needing real-time monitoring such as aerospace, navigation and positioning, and the like, and the high reliability of the system is ensured.
Drawings
The accompanying drawings, which are described herein, serve to provide a further understanding of the invention and constitute a part of this specification, and the exemplary embodiments and descriptions thereof are provided for explaining the invention without unduly limiting it. In the drawings:
fig. 1 is a schematic circuit diagram of the L-band rf power amplifying module of the present invention.
Detailed Description
In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention clearer and more obvious, the following description of the present invention with reference to the accompanying drawings and embodiments is provided for further details. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention.
As shown in fig. 1, the circuit schematic diagram of the preferred embodiment of the L-band rf power amplifying module according to the present invention; the power amplifier comprises single-pole double-throw switching switches SP2T1 and SP2T2, band-pass filters BPF1, BPF2, BPF3 and BPF4, and power amplifiers PA1, PA2, PA3 and PA 4; wherein,
a first branch of the single-pole double-throw switch SP2T1, a band-pass filter BPF1, power amplifiers PA1, PA2, a band-pass filter BPF2 and a first branch of the single-pole double-throw switch SP2T2 are sequentially connected to form an amplification link; in the link, the band-pass filter BPF1 adopts a sound meter band-pass filter with small volume and high frequency selection, and the band-pass filter BPF2 adopts a medium band-pass filter with high center frequency, low insertion loss and high power capacity; the power amplifier PA1 is a first-stage power amplifier of the link, namely a driving-stage power amplifier, and an MMIC power amplification chip with the gain of 20dB of an RFMD company is adopted; the power amplifier PA2 is a second-stage power amplifier of the link and adopts an MMIC power amplification chip of Intion company;
the second branch of the single-pole double-throw switch SP2T1, the second branch of the band-pass filter BPF3, the power amplifiers PA3, PA4, the second branch of the band-pass filter BPF4 and the second branch of the single-pole double-throw switch SP2T2 are connected in sequence to form another path of amplification link; in the link, the band-pass filter BPF3 adopts a sound meter band-pass filter with small volume and high frequency selection, and the band-pass filter BPF4 adopts a medium band-pass filter with high center frequency, low insertion loss and high power capacity; the power amplifier PA3 is a first-stage power amplifier of the link, namely a driving-stage power amplifier, and an MMIC power amplification chip with the gain of 20dB of an RFMD company is adopted; the power amplifier PA4 is a second-stage power amplifier of the link and adopts an MMIC power amplification chip of Intion company; because the matching circuit part is integrated in the power amplifier chip adopted by the embodiment, the two stages of amplification chips can be directly cascaded, the circuit is simple, and the chip gain is high.
The working principle of the L-band radio frequency power amplification module is as follows: the method comprises the following steps that a radio frequency input signal is input through a selector switch, clutter and interference signals are filtered through a sound surface band-pass filter, an obtained useful signal enters a two-stage power amplification chip to be amplified, the gain of the obtained radio frequency signal can reach more than 37dBm, and out-of-band harmonic waves and stray waves are filtered through a dielectric filter to ensure the purity of the radio frequency signal; the output power of the Signal can be detected in real time according to the output RSSI (Received Signal Strength Indicator) level; in a default state, only one path of amplification link works, the other path only performs hot backup, if any abnormality exists, the change-over switch can be immediately started to automatically switch to the other path, so that normal communication is ensured, and the reliability of signals is improved.
While the foregoing description shows and describes the preferred embodiments of the present invention, it is to be understood, as noted above, that the invention is not limited to the forms disclosed herein, but is not intended to be exhaustive or to exclude other embodiments and may be used in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. But that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention, which is to be limited only by the claims appended hereto.

Claims (6)

1. An L-band radio frequency power amplification module is characterized by comprising single-pole double-throw change-over switches SP2T1 and SP2T2, band-pass filters BPF1, BPF2, BPF3 and BPF4, power amplifiers PA1, PA2, PA3 and PA 4; the above-mentioned
The first branch of the single-pole double-throw switch SP2T1, the first branch of the band-pass filter BPF1, the power amplifiers PA1, PA2, the first branch of the band-pass filter BPF2 and the first branch of the single-pole double-throw switch SP2T2 are connected in sequence;
the second branch of the single-pole double-throw switch SP2T1, the band-pass filter BPF3, the power amplifiers PA3, PA4, the band-pass filter BPF4 and the second branch of the single-pole double-throw switch SP2T2 are connected in sequence.
2. The L-band radio frequency power amplification module of claim 1, wherein the band pass filters BPF1, BPF3 are acoustic surface band pass filters.
3. The L-band radio frequency power amplification module of claim 1, wherein the band pass filters BPF2, BPF4 are dielectric band pass filters.
4. The L-band radio frequency power amplification module of claim 1, wherein the power amplifiers PA1, PA3 are driver stage power amplifiers.
5. The L-band RF power amplification module of claim 1 or 4, wherein the power amplifiers PA1, PA3 are Monolithic Microwave Integrated Circuit (MMIC) amplification chips with RFMD company gain of 20 dB.
6. The L-band radio frequency power amplification module of claim 1, wherein the power amplifiers PA2, PA4 employ MMIC amplification chips from the company Innotion.
CN201420220514.3U 2014-04-30 2014-04-30 L waveband radio-frequency power amplification module Expired - Fee Related CN203896314U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420220514.3U CN203896314U (en) 2014-04-30 2014-04-30 L waveband radio-frequency power amplification module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420220514.3U CN203896314U (en) 2014-04-30 2014-04-30 L waveband radio-frequency power amplification module

Publications (1)

Publication Number Publication Date
CN203896314U true CN203896314U (en) 2014-10-22

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Family Applications (1)

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CN201420220514.3U Expired - Fee Related CN203896314U (en) 2014-04-30 2014-04-30 L waveband radio-frequency power amplification module

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109560832A (en) * 2019-01-24 2019-04-02 广西芯百特微电子有限公司 A kind of radio circuit and terminal for 5G communication
CN111293996A (en) * 2020-03-05 2020-06-16 芯朴科技(上海)有限公司 Balanced amplifier and power amplification method of radio frequency signal
CN111969969A (en) * 2020-08-28 2020-11-20 佛山市音箭电子科技有限公司 Three-level power amplifying circuit system
CN114389638A (en) * 2020-10-19 2022-04-22 Oppo广东移动通信有限公司 Power amplifier module, control method, terminal and computer storage medium

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109560832A (en) * 2019-01-24 2019-04-02 广西芯百特微电子有限公司 A kind of radio circuit and terminal for 5G communication
CN111293996A (en) * 2020-03-05 2020-06-16 芯朴科技(上海)有限公司 Balanced amplifier and power amplification method of radio frequency signal
CN111969969A (en) * 2020-08-28 2020-11-20 佛山市音箭电子科技有限公司 Three-level power amplifying circuit system
CN114389638A (en) * 2020-10-19 2022-04-22 Oppo广东移动通信有限公司 Power amplifier module, control method, terminal and computer storage medium
CN114389638B (en) * 2020-10-19 2024-03-12 Oppo广东移动通信有限公司 Power amplifier module, control method, terminal and computer storage medium

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20141022

Termination date: 20200430

CF01 Termination of patent right due to non-payment of annual fee