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CN203552780U - High voltage insulating bus connection shielding layer structure - Google Patents

High voltage insulating bus connection shielding layer structure Download PDF

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Publication number
CN203552780U
CN203552780U CN201320631268.6U CN201320631268U CN203552780U CN 203552780 U CN203552780 U CN 203552780U CN 201320631268 U CN201320631268 U CN 201320631268U CN 203552780 U CN203552780 U CN 203552780U
Authority
CN
China
Prior art keywords
semi
conductive layer
conductive
shielding layer
conduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201320631268.6U
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Chinese (zh)
Inventor
章银龙
傅裕
罗焱杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Golden Phoenix Electrical Technology Co ltd
Original Assignee
ZHEJIANG GOLDEN PHOENIX ELECTRICAL TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZHEJIANG GOLDEN PHOENIX ELECTRICAL TECHNOLOGY Co Ltd filed Critical ZHEJIANG GOLDEN PHOENIX ELECTRICAL TECHNOLOGY Co Ltd
Priority to CN201320631268.6U priority Critical patent/CN203552780U/en
Application granted granted Critical
Publication of CN203552780U publication Critical patent/CN203552780U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

This utility model discloses a high voltage insulating bus connection shielding layer structure, comprising a bus connection part shielding layer wrapping a conductive core connection member. The bus connection part shielding layer possesses an insulation layer and a conductive/semiconductive layer. The conductive/semiconductive layer of the bus connection part shielding layer comprises an inner conductive/semiconductive layer and an outer conductive/semiconductive layer, the inner conductive/semiconductive layer is positioned inside the insulation layer, and the outer conductive/ semiconductive layer are outside of the insulation layer and extends to the outside of the shielding layer of the high voltage insulating bus. Two ends of the inner conductive/semiconductive rubber layer are respectively provided with two rounds of inner stress cones, and outer stress cones are arranged between the bus connection part shielding layer and the high voltage insulation bus shielding layer. The outer conductive/semiconductive rubber layer extends to the outer stress cones. The high voltage insulating bus connection shielding layer structure optimizes the high voltage insulating bus connection shielding layer structure, simplifies the capacitive shielding layer structure and has good insulation performance.

Description

The shielding layer structure that a kind of high-voltage insulated bus connects
Technical field
The utility model relates to a kind of high-voltage insulated bus syndeton, is more specifically the shielding layer structure that a kind of high-voltage insulated bus connects, and belongs to power equipment technical field.
Background technology
High-voltage insulated bus is generally used for the transmission of high-tension electricity, and existing isolated bus is comprised of conductive cores and screen, and screen overlays on conductive cores outer insulation, conduction or semi-conductive layer by alternating packets and forms.Conductive cores adopts conductive metal pipe conventionally, as copper pipe etc.
Initial fiber or the organic insulation film strip of epoxy resin dipping of mostly adopting of the insulating barrier of screen made, and capacitor plate is directly by conducting electricity or semiconductive material is made.State Intellectual Property Office's on October 20th, 2010 disclosed " a kind of manufacture method of isolated bus of bending " (publication number: 101866723A), the document is introduced in the manufacture method of crooked isolated bus, insulating barrier adopts electrically insulating silicone rubber or insulation ethylene-propylene rubber to make, conduction or semiconductive material adopt conductive silicon rubber or conduction ethylene-propylene rubber or partly lead silicon rubber or semiconductive ethylene-propylene rubber is made, the making of this screen of making of rubber and install all very simple.At present more and more as the material of insulating barrier, conduction or semi-conductive layer, except the elastomeric materials such as silicon rubber and ethylene-propylene rubber, the material such as available plastics, sizing material also.
Conventionally high-voltage insulated bus connects and comprises the mechanical connection of conductive cores and the screen outside syndeton.State Intellectual Property Office's on October 27th, 2010 disclosed " a kind of high-voltage insulated bus connector and attaching method thereof " patent documentation (publication number: 101872907A), the high-voltage insulated bus connector of Introduction of Literatures, the connection of conductive cores adopts conduction tube connector, adapter sleeve (screen) comprises insulating barrier and several capacitance plates lengthening gradually from the inside to the outside, and the insulating barrier of adapter sleeve and capacitance plate are elastomeric materials.Adapter sleeve adopts elastomeric material, has facilitated its making and installation, but the capacitance plate lengthening gradually from the inside to the outside for several, make again the complex structure of adapter sleeve, and insulation property also awaits further raising.
Utility model content
For above-mentioned situation, the problem that the utility model quasi-solution is determined is to provide the shielding layer structure that a kind of high-voltage insulated bus simple in structure, good insulation preformance connects.
For achieving the above object, the utility model has adopted following technical scheme: the shielding layer structure that a kind of high-voltage insulated bus connects, it comprises the bus junction screen that is coated on conductive cores connector, described bus junction screen has insulating barrier and conduction or semi-conductive layer, the conduction of described bus junction screen or semi-conductive layer comprise interior conduction or semi-conductive layer and outer conduction or semi-conductive layer, and described interior conduction or semi-conductive layer are in insulating barrier inner side and cover whole conductive cores connector; Described outer conduction or semi-conductive layer are in insulating barrier outside and extend to the outside of the screen of high-voltage insulated bus.Two ends of described interior conduction or semi-conductive layer are respectively equipped with a circle internal stress cone, between described bus junction screen and the screen of high-voltage insulated bus and near two end positions of bus junction screen, are respectively provided with a circle external carbuncle and bore; Described outer conduction or semi-conductive layer extend to external carbuncle cone place.
Described internal stress cone and external carbuncle cone are elliptic cone or straight line cone.
Adopt such scheme, the shielding layer structure that high-voltage insulated bus of the present utility model connects, the conduction of screen or semi-conductive layer comprise interior conduction or semi-conductive layer and outer conduction or semi-conductive layer, and interior conduction or semi-conductive layer are in insulating barrier inner side and cover whole conductive cores tube connector; Outer conduction or semi-conductive layer are in insulating barrier outside and extend to the outside of the screen of high-voltage insulated bus.Two ends at interior conduction or semi-conductive layer are respectively equipped with a circle internal stress wimble structure, between described screen and the screen of high-voltage insulated bus and near two end positions of screen, respectively be provided with a circle external carbuncle wimble structure, described outer conduction or semi-conductive layer extend to external carbuncle cone place.Near field strength distribution stress cone setting makes is even, thereby near the electric field that can greatly reduce screen is concentrated.In addition, what also need here to emphasize is that the distance between the size of stress cone is bored with external carbuncle according to the conveying voltage of isolated bus, internal stress cone, the actual conditions such as thickness of screen are determined, high-voltage insulated bus syndeton of the present invention has been optimized the structure of screen, makes simple in structure, the good insulation preformance of screen.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the shielding layer structure of the utility model high-voltage insulated bus connection.
In figure: 1-conductive cores tube connector connector, 2-internal stress cone, 3-insulating barrier, 4-external carbuncle cone, conduction or semi-conductive layer in 5-, 6-conducts electricity outward or semi-conductive layer, the screen of 7-high-voltage insulated bus.
Embodiment
As shown in Figure 1, the shielding layer structure that high-voltage insulated bus of the present utility model connects, it comprises the bus junction screen that is coated on conductive cores connector 1, described bus junction screen has insulating barrier 3 and conduction or semi-conductive layer, and the material that described insulating barrier 3 adopts is electrically insulating silicone rubber or insulation ethylene-propylene rubber; The material that described conduction or semi-conductive layer adopt is conductive silicon rubber or semiconductive silicon rubber or conduction ethylene-propylene rubber or semiconductive ethylene-propylene rubber, certainly the material such as available plastics, sizing material also.These conductions or semiconductive elastomeric material can directly be buied from market.
The conduction of described bus junction screen or semi-conductive layer comprise interior conduction or semi-conductive layer 5 and outer conduction or semi-conductive layer 6, and described interior conduction or semi-conductive layer 5 are in insulating barrier 3 inner sides and cover whole conductive cores connector 1.Described outer conduction or semi-conductive layer 6 are in insulating barrier 3 outsides and extend to the outside of the screen 7 of high-voltage insulated bus.Two ends of described interior conduction or semi-conductive layer 5 are respectively equipped with a circle internal stress cone 2, between described bus junction screen and the screen 7 of high-voltage insulated bus and near two end positions of bus junction screen, respectively be provided with a circle external carbuncle cone 4, described outer conduction or semi-conductive layer 6 extend to external carbuncle and bore 4 places.Described internal stress cone 2 and external carbuncle cone 4 are elliptic cone or straight line cone.The size of stress cone is determined according to the distance between the conveying voltage of isolated bus, internal stress cone 2 and external carbuncle cone 4, the actual conditions such as thickness of screen, high-voltage insulated bus syndeton of the present invention has been optimized the structure of screen, makes simple in structure, the good insulation preformance of screen.

Claims (2)

1. the shielding layer structure that a high-voltage insulated bus connects, it comprises the bus junction screen that is coated on conductive cores connector (1), described bus junction screen has insulating barrier (3) and conduction or semi-conductive layer, the conduction or the semi-conductive layer that it is characterized in that described bus junction screen comprise interior conduction or semi-conductive layer (5) and outer conduction or semi-conductive layer (6), and described interior conduction or semi-conductive layer (5) are in insulating barrier (3) inner side and cover whole conductive cores connector (1); Described outer conduction or semi-conductive layer (6) are in insulating barrier outside and extend to the outside of the screen (7) of high-voltage insulated bus; Two ends of described interior conduction or semi-conductive layer (5) are respectively equipped with a circle internal stress cone (2), between described bus junction screen and the screen of high-voltage insulated bus and near two end positions of bus junction screen, be respectively provided with a circle external carbuncle cone (4); Described outer conduction or semi-conductive layer (6) extend to external carbuncle cone (4) and locate.
2. the shielding layer structure that high-voltage insulated bus according to claim 1 connects, is characterized in that described internal stress cone (2) and external carbuncle cone (4) are elliptic cone or straight line cone.
CN201320631268.6U 2013-10-14 2013-10-14 High voltage insulating bus connection shielding layer structure Expired - Fee Related CN203552780U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320631268.6U CN203552780U (en) 2013-10-14 2013-10-14 High voltage insulating bus connection shielding layer structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320631268.6U CN203552780U (en) 2013-10-14 2013-10-14 High voltage insulating bus connection shielding layer structure

Publications (1)

Publication Number Publication Date
CN203552780U true CN203552780U (en) 2014-04-16

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Family Applications (1)

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CN201320631268.6U Expired - Fee Related CN203552780U (en) 2013-10-14 2013-10-14 High voltage insulating bus connection shielding layer structure

Country Status (1)

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CN (1) CN203552780U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105261418A (en) * 2015-11-10 2016-01-20 江苏士林电气设备有限公司 A three-layer co-extrusion ethylene-propylene high-voltage insulating tube bus
CN107534248A (en) * 2014-12-01 2018-01-02 欧玛嘉宝(珠海)开关设备有限公司 It is electrically connected the adapter of cable sleeve

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107534248A (en) * 2014-12-01 2018-01-02 欧玛嘉宝(珠海)开关设备有限公司 It is electrically connected the adapter of cable sleeve
CN107534248B (en) * 2014-12-01 2020-01-14 欧玛嘉宝(珠海)开关设备有限公司 Adapter for electrical connection of cable bushings
CN105261418A (en) * 2015-11-10 2016-01-20 江苏士林电气设备有限公司 A three-layer co-extrusion ethylene-propylene high-voltage insulating tube bus

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20170825

Address after: 312300 Zhejiang, Shangyu Economic Development Zone (Cao E Street) Dongshan Road, No. 188

Patentee after: GOLDEN PHOENIX HOLDING GROUP CO.,LTD.

Address before: 312300 Shangyu City, Zhejiang Province Economic Development Zone, East Hill Road, No. 188

Patentee before: ZHEJIANG GOLDEN PHOENIX ELECTRICAL TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20180613

Address after: 312300 188 Dongshan Road, Cao E Street, Shangyu District, Shaoxing, Zhejiang

Patentee after: ZHEJIANG GOLDEN PHOENIX ELECTRICAL TECHNOLOGY Co.,Ltd.

Address before: 312300 Dongshan Road, Shangyu District Economic Development Zone (Cao E Street), Shaoxing, Zhejiang 188

Patentee before: GOLDEN PHOENIX HOLDING GROUP CO.,LTD.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140416

Termination date: 20211014