CN203513831U - Silicon carbide epitaxial furnace compatible small disk base - Google Patents
Silicon carbide epitaxial furnace compatible small disk base Download PDFInfo
- Publication number
- CN203513831U CN203513831U CN201320640651.8U CN201320640651U CN203513831U CN 203513831 U CN203513831 U CN 203513831U CN 201320640651 U CN201320640651 U CN 201320640651U CN 203513831 U CN203513831 U CN 203513831U
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- Prior art keywords
- silicon carbide
- epitaxy
- diameter
- spacing annulus
- disk
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- Expired - Lifetime
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 96
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000000407 epitaxy Methods 0.000 claims description 68
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 33
- 230000012010 growth Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010020880 Hypertrophy Diseases 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a silicon carbide epitaxial furnace compatible small disk base by which the multisize compatible growth of a silicon carbide epitaxial crystal wafer is realized on the same small disk base. The silicon carbide epitaxial furnace compatible small disk base comprises a disk base and an outer limiting ring, wherein the middle of the disk base is raised to form a disk platform for epitaxially growing the silicon carbide epitaxial crystal wafer; the outer limiting ring is sleeved at the edge of the disk platform, and the upper surface of the outer limiting ring is higher than that of the disk platform; the silicon carbide epitaxial furnace compatible small disk base also comprises an inner limiting ring which is separated and independent, and the inner limiting ring can be placed on the disk platform; the diameter of the excircle of the inner limiting platform is equal to or slightly smaller than the diameter of the disk platform, the diameter of the inner circle of the inner limiting ring is equal to or slightly larger than the diameter of a silicon carbide substrate for epitaxially growing the silicon carbide epitaxial crystal wafer, and the thickness of the inner limiting ring is equal to or slightly smaller than that of the silicon carbide substrate for epitaxially growing the silicon carbide epitaxial crystal wafer.
Description
Technical field
The utility model relates to a kind of silicon carbide epitaxy wafer manufacture device, particularly the compatible shallow bid pedestal of silicon carbide epitaxy stove.
Background technology
Manufacturing silicon carbide semiconductor has the good characteristics such as large energy gap, good stability, high heat conductance, high critical breakdown strength, high saturated electron drift velocity, is the ideal semiconductor material of making high temperature, high frequency, high-power and severe radiation power electronic devices.Compare with traditional silicon device, silicon carbide device can normally be worked at 10 times under the strength of electric field of silicon device.For making the carbofrax material of silicon carbide device, be normally grown in the silicon carbide epitaxy wafer in silicon carbide substrates.At present silicon carbide epitaxial growth has been realized commercialization, conventionally adopts CVD(chemical vapour deposition) the method silicon carbide epitaxy wafer of growing.
Along with the progress of manufacturing silicon carbide semiconductor technology, industry application is more and more higher to the requirement of silicon carbide power device performance, and cost requirement is more and more lower.Along with device for high-power power electronic proposes higher requirement and demand to carborundum crystals and epitaxial material, increase the task of top priority that wafer size becomes carborundum crystals development.
In business silicon carbide epitaxy stove, in order to tackle the growth of different size silicon carbide epitaxy wafer, conventionally adopt the mode of changing shallow bid pedestal to carry out.As 2400 or 2800 serial silicon carbide epitaxy stoves of German Aixtron company, adopt independent 3 inches of shallow bids and 4 inches of shallow bids, while growing 3 inch silicon carbide epitaxial wafer, use 3 inches of corresponding shallow bids, during growth 4 inch silicon carbide epitaxial wafer, adopt 4 inches of shallow bids.After each shallow bid replacing, all to carry out the baking of equipment to remove the impurity such as steam of surface attachment, this has brought very large inconvenience to production, the production cost simultaneously also increasing.In addition, the shallow bid pedestal of plurality of specifications is used simultaneously, also to maintenance of the equipment, brings very large difficulty.
Utility model content
The utility model proposes the compatible shallow bid pedestal of silicon carbide epitaxy stove, solve existing silicon carbide epitaxy stove and changed different size shallow bid pedestal at the silicon carbide epitaxy wafer growth needs for different size, to production, bring problem constant and increase production cost, realized the many size compatibilities growths that realize silicon carbide epitaxy wafer on same shallow bid pedestal.
The technical solution of the utility model is achieved in that
The compatible shallow bid pedestal of silicon carbide epitaxy stove, comprises disk pedestal and outer spacing annulus, and described disk pedestal middle part convexes to form one for the disk platform of epitaxy silicon carbide epitaxy wafer; Described outer spacing annulus is set in described disk platform edges edge, and the upper surface of outer spacing annulus is higher than the upper surface of disk platform, also comprises separately independently interior spacing annulus, and this interior spacing annulus can be positioned on described disk platform; The outside diameter of described interior spacing annulus is equal to or slightly less than the diameter of described disk platform, the interior circular diameter of described interior spacing annulus equals or is slightly larger than the diameter for the silicon carbide substrates of epitaxy silicon carbide epitaxy wafer, and the thickness of described interior spacing annulus is equal to or slightly less than the thickness for the silicon carbide substrates of epitaxy silicon carbide epitaxy wafer.
Preferably, described outer spacing annulus is silicon carbide annulus.
Preferably, described interior spacing annulus is silicon carbide annulus.
Known by above description, the utility model compared with prior art, the utlity model has following advantage:
The utility model has designed interior spacing annulus, when wanting the diameter of epitaxially grown silicon carbide epitaxy wafer to be less than the diameter of disk platform, can select the interior spacing annulus that an interior circular diameter is suitable with the diameter that should want the corresponding silicon carbide substrates of epitaxially grown silicon carbide epitaxy wafer, this interior spacing annulus is placed on disk platform, then the silicon carbide substrates of correspondingly-sized is placed in this interior spacing annulus, without changing whole shallow bid pedestal.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is decomposing state structural representation of the present utility model;
Fig. 2 is assembled state structural representation of the present utility model;
Fig. 3 is the structural representation of shallow bid pedestal of the present utility model while being placed in the deep bid pedestal of silicon carbide epitaxy stove.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Embodiment based in the utility model, those of ordinary skills are not making the every other embodiment obtaining under creative work prerequisite, all belong to the scope of the utility model protection.
See figures.1.and.2, the compatible shallow bid pedestal of silicon carbide epitaxy stove, spacing annulus 3 in comprising disk pedestal 1 and outer spacing annulus 2 and separating independently, described disk pedestal 1 middle part convexes to form one for the disk platform 11 of epitaxy silicon carbide epitaxy wafer; Described outer spacing annulus 2 is set in described disk platform 11 edges, and the upper surface of outer spacing annulus 2 is higher than the upper surface of disk platform 11, and described interior spacing annulus 3 can be positioned on described disk platform 11; The outside diameter of described interior spacing annulus 3 is equal to or slightly less than the diameter of described disk platform 11, the interior circular diameter of described interior spacing annulus 3 equals or is slightly larger than the diameter for the silicon carbide substrates 4 of epitaxy silicon carbide epitaxy wafer, and the thickness of described interior spacing annulus 3 is equal to or slightly less than the thickness for the silicon carbide substrates 4 of epitaxy silicon carbide epitaxy wafer.
Because the thermal conductivity of carbofrax material is high, can improve temperature homogeneity, therefore outer spacing annulus 2 of the present utility model and interior spacing annulus 3 are all preferably used silicon carbide annulus, utilize the high heat conductance of silicon carbide to make silicon carbide wafer epitaxy more even.
With reference to Fig. 1-Fig. 3, interior spacing annulus 3 of the present utility model can be used in combination with disk pedestal 1 and outer spacing annulus 2 according to actual needs, concrete, use the method for the compatible shallow bid pedestal of above-mentioned silicon carbide epitaxy stove epitaxy silicon carbide epitaxy wafer, comprise the following steps:
Step 1, choose the shallow bid pedestal 1 that the diameter of disk platform is a and be placed on the deep bid pedestal 5 of silicon carbide epitaxy stove;
When in step 2, the diameter b of silicon carbide substrates equals the diameter a of disk platform, directly silicon carbide substrates is positioned on the disk platform of shallow bid pedestal; Now, the silicon carbide epitaxy wafer interior epitaxy of spacing annulus limited range outside;
At present, on market, the silicon carbide epitaxy wafer size of main flow is 3 inches and 4 inches, in order better to understand the utility model, the present embodiment take that to utilize the compatible epitaxy 3 inch silicon carbide epitaxial wafers of shallow bid pedestal for epitaxy 4 inch silicon carbide epitaxial wafers be example:
Select the shallow bid pedestal for epitaxy 4 inch silicon carbide epitaxial wafers, the diameter of its disk platform is 4 inches, for epitaxy 3 inch silicon carbide epitaxial wafers, selecting the diameter of silicon carbide substrates is 3 inches, the optimal selection of described interior spacing annulus is: outside diameter is 4 inches, and interior circular diameter is 3 inches.Interior spacing annulus can make the epitaxy in the scope of interior spacing annulus restriction of silicon carbide epitaxy wafer, avoids silicon carbide epitaxy wafer hypertrophy on the disk platform of 4 inches, and size exceeds, and uncontrollable problem.
In like manner, if epitaxially grown silicon carbide epitaxy wafer is 2 inches, the diameter of selecting silicon carbide substrates is 2 inches, and the interior circular diameter of interior spacing annulus is 2 inches.If the silicon carbide epitaxy wafer of growth is greater than 4 inches, the shallow bid pedestal that should selector disc platform diameter be greater than 4 inches, the selection of silicon carbide substrates and interior spacing annulus is selected according to the silicon carbide epitaxy wafer that will grow with reference to above-mentioned case.
In addition, existing silicon carbide epitaxy stove one stove is the silicon carbide epitaxy wafer of a plurality of same sizes of epitaxy simultaneously only, on the big disk pedestal 5 of same silicon carbide epitaxy stove, place the shallow bid pedestal of the same specification that a plurality of disk platform diameter are identical, realize a plurality of unidimensional silicon carbide epitaxy wafers of epitaxy, and the utility model can be realized the silicon carbide epitaxy wafer of the multiple different size specification of mixed growth in a silicon carbide epitaxy stove, only need on the disk platform of the shallow bid pedestal of a plurality of same specifications, place spacing annulus in several different sizes.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (3)
1. the compatible shallow bid pedestal of silicon carbide epitaxy stove, comprises disk pedestal and outer spacing annulus, and described disk pedestal middle part convexes to form one for the disk platform of epitaxy silicon carbide epitaxy wafer; Described outer spacing annulus is set in described disk platform edges edge, and the upper surface of outer spacing annulus is higher than the upper surface of disk platform, it is characterized in that:
Also comprise and separate independently interior spacing annulus, this interior spacing annulus can be positioned on described disk platform; The outside diameter of described interior spacing annulus is equal to or slightly less than the diameter of described disk platform, the interior circular diameter of described interior spacing annulus equals or is slightly larger than the diameter for the silicon carbide substrates of epitaxy silicon carbide epitaxy wafer, and the thickness of described interior spacing annulus is equal to or slightly less than the thickness for the silicon carbide substrates of epitaxy silicon carbide epitaxy wafer.
2. the compatible shallow bid pedestal of silicon carbide epitaxy stove as claimed in claim 1, is characterized in that: described outer spacing annulus is silicon carbide annulus.
3. the compatible shallow bid pedestal of silicon carbide epitaxy stove as claimed in claim 1 or 2, is characterized in that: described interior spacing annulus is silicon carbide annulus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320640651.8U CN203513831U (en) | 2013-10-15 | 2013-10-15 | Silicon carbide epitaxial furnace compatible small disk base |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320640651.8U CN203513831U (en) | 2013-10-15 | 2013-10-15 | Silicon carbide epitaxial furnace compatible small disk base |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203513831U true CN203513831U (en) | 2014-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320640651.8U Expired - Lifetime CN203513831U (en) | 2013-10-15 | 2013-10-15 | Silicon carbide epitaxial furnace compatible small disk base |
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| CN (1) | CN203513831U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103510158A (en) * | 2013-10-15 | 2014-01-15 | 瀚天天成电子科技（厦门）有限公司 | Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof |
| CN106948002A (en) * | 2017-03-15 | 2017-07-14 | 南京国盛电子有限公司 | The two-sided base construction of electromagnetic induction heating epitaxial furnace |
-
2013
- 2013-10-15 CN CN201320640651.8U patent/CN203513831U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103510158A (en) * | 2013-10-15 | 2014-01-15 | 瀚天天成电子科技（厦门）有限公司 | Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof |
| CN106948002A (en) * | 2017-03-15 | 2017-07-14 | 南京国盛电子有限公司 | The two-sided base construction of electromagnetic induction heating epitaxial furnace |
| CN106948002B (en) * | 2017-03-15 | 2019-07-09 | 南京国盛电子有限公司 | The two-sided base construction of electromagnetic induction heating epitaxial furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiang'an) Industrial Zone, Xiamen, Fujian Patentee after: EPIWORLD INTERNATIONAL CO.,LTD. Address before: 361000 room 425, entrepreneurship building, entrepreneurship Park, torch high tech Zone, Xiamen, Fujian Patentee before: EPIWORLD INTERNATIONAL CO.,LTD. |
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| CP02 | Change in the address of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiang'an) Industrial Zone, Xiamen, Fujian Patentee after: Hantiantiancheng Electronic Technology (Xiamen) Co.,Ltd. Address before: 361000 first floor, building B, Jianye Building, No. 96, Xiangxing Road, Xiamen Torch High tech Zone (Xiang'an) Industrial Zone, Xiamen, Fujian Patentee before: EPIWORLD INTERNATIONAL CO.,LTD. |
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| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140402 |
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| CX01 | Expiry of patent term |