CN203434148U - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- CN203434148U CN203434148U CN201320085424.3U CN201320085424U CN203434148U CN 203434148 U CN203434148 U CN 203434148U CN 201320085424 U CN201320085424 U CN 201320085424U CN 203434148 U CN203434148 U CN 203434148U
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- Prior art keywords
- semiconductor chip
- distribution
- semiconductor device
- semiconductor
- chip
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Abstract
The utility model provides a semiconductor device. The semiconductor device is provided with a semiconductor chip, a circuit base board which is configured opposite to the semiconductor chip and a resin layer which is arranged between the semiconductor chip and the circuit base board; opposite surfaces of the semiconductor chip and the circuit base board are provided with arranged wires respectively; the arranged wires of the semiconductor chip are in flip-chip bonding with the arranged wires of the circuit base board.
Description
Technical field
The utility model relates to semiconductor device.
Background technology
In the past, for semiconductor chip is connected with substrate, the wire-bonded mode of the metal fines such as gold thread was used in extensive use.On the other hand, in order to tackle the requirements such as multifunction for semiconductor device, highly integrated, high speed, on semiconductor chip or substrate, form the conductivity projection that is known as projection, semiconductor chip and the direct-connected flip-chip connected mode of substrate (FC connected mode) are being popularized to (for example, patent documentation 1).
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2008-294382 communique
Utility model content
The problem that utility model will solve
The purpose of this utility model is, the semiconductor device of a kind of reflux-resisting welded property and connection reliability excellence is provided.
The method of dealing with problems
A mode of the present utility model provides a kind of semiconductor device, it possesses circuit substrate and the resin bed between above-mentioned semiconductor chip and foregoing circuit substrate of semiconductor chip, configuration relative to above-mentioned semiconductor chip, above-mentioned semiconductor chip and foregoing circuit substrate have distribution on respect to one another, and the above-mentioned distribution of above-mentioned semiconductor chip and the above-mentioned distribution of foregoing circuit substrate have carried out flip-chip connection mutually.
In the manner, the thickness of above-mentioned semiconductor chip can be made as 30~750 μ m.
In addition in the manner, above-mentioned semiconductor chip can have the essentially rectangular shape that the length on each limit is 1~40mm.
In the manner, foregoing circuit substrate can be organic substrate in addition, and now in the face of foregoing circuit substrate, the thermal coefficient of expansion of direction is preferably 2~20(1/K).
In addition in the manner, the above-mentioned distribution of foregoing circuit substrate can comprise at least one metal being selected from the group that silver, copper and scolding tin forms.
In addition in the manner, it can be to have used the connection that connects projection that above-mentioned flip-chip connects, and above-mentioned connection projection can comprise at least one metal being selected from the group that silver, copper and scolding tin forms.
In the manner, the spacing of the above-mentioned distribution of foregoing circuit substrate can be made as 5~200 μ m in addition.
In the manner, the gap of the above-mentioned distribution of foregoing circuit substrate can be made as 5~100 μ m in addition.
In the manner, foregoing circuit substrate can have resist pattern in addition.
In addition in the manner, the bonding force slip at 260 ℃ between the above-mentioned semiconductor chip while placing 48 hours under 80 ℃ of temperature, relative humidity 60% condition and foregoing circuit substrate is preferably below 30%.The reflux-resisting welded property of such semiconductor device is excellent.In addition, such slip can be realized by the bonding agent that comprises specific solder flux by aftermentioned.
In the manner, above-mentioned resin bed is preferably selected from 2-methylglutaric acid, dimethyl succinic acid, 2 by containing in addition, and the solidfied material of the bonding agent of at least one solder flux in the group that 2-dimethylated pentanedioic acid and 3,3-dimethylated pentanedioic acid form forms.By adopting such resin bed, can meet the regulation of above-mentioned bonding force slip, can obtain the semiconductor device of reflux-resisting welded property excellence.
Other modes of the present utility model provide a kind of semiconductor device, it possesses the second semiconductor chip and the resin bed between above-mentioned the first semiconductor chip and above-mentioned the second semiconductor chip of the first semiconductor chip, configuration relative to above-mentioned the first semiconductor chip, above-mentioned the first semiconductor chip and above-mentioned the second semiconductor chip have distribution on respect to one another, and the above-mentioned distribution of above-mentioned the first semiconductor chip and the above-mentioned distribution of above-mentioned the second semiconductor chip have carried out flip-chip connection mutually.
In the manner, the thickness of above-mentioned the first semiconductor chip and above-mentioned the second semiconductor chip can be made as 30~750 μ m.
In addition in the manner, above-mentioned the first semiconductor chip and above-mentioned the second semiconductor chip can have the essentially rectangular shape that the length on each limit is 1~40mm.
In addition in the manner, it can be to have used the connection that connects projection that above-mentioned flip-chip connects, and above-mentioned connection projection can comprise at least one metal being selected from the group that silver, copper and scolding tin forms.
In the manner, the spacing of the above-mentioned distribution of above-mentioned the first semiconductor chip and the above-mentioned distribution of above-mentioned the second semiconductor chip can be respectively 5~200 μ m in addition.
In the manner, the gap of the above-mentioned distribution of above-mentioned the first semiconductor chip and the above-mentioned distribution of above-mentioned the second semiconductor chip can be respectively 5~100 μ m in addition.
In addition in the manner, the bonding force slip at 260 ℃ between above-mentioned the first semiconductor chip while placing 48 hours under 80 ℃ of temperature, relative humidity 60% condition and above-mentioned the second semiconductor chip is preferably below 30%.The reflux-resisting welded property of such semiconductor device is excellent.Such slip can be realized by the bonding agent that comprises specific solder flux by aftermentioned in addition.
In the manner, above-mentioned resin bed is preferably selected from 2-methylglutaric acid, dimethyl succinic acid, 2 by containing in addition, and the solidfied material of the bonding agent of at least one solder flux in the group that 2-dimethylated pentanedioic acid and 3,3-dimethylated pentanedioic acid form forms.By adopting such resin bed, can meet the regulation of above-mentioned bonding force slip, can obtain the semiconductor device of reflux-resisting welded property excellence.
Other mode of the present utility model provides a kind of semiconductor device, it possesses the intermediary substrate (Interposer Substrate) on interarea with distribution, on above-mentioned intermediary substrate across the first stacked semiconductor chip of the first resin bed, and on above-mentioned the first semiconductor chip across the second stacked semiconductor chip of the second resin bed, above-mentioned the first semiconductor chip has the first distribution arranging on the interarea relative with above-mentioned intermediary substrate, the second distribution arranging on the face of the opposition side of this interarea, and the through electrode that connects above-mentioned the first distribution and above-mentioned the second distribution, above-mentioned the second semiconductor chip has the 3rd distribution arranging on the interarea relative with above-mentioned the first semiconductor chip, the 4th distribution arranging on the face of the opposition side of this interarea, and the through electrode that connects above-mentioned the 3rd distribution and above-mentioned the 4th distribution, above-mentioned first distribution of the above-mentioned distribution of above-mentioned intermediary substrate and above-mentioned the first semiconductor chip has carried out flip-chip connection mutually, above-mentioned the 3rd distribution of above-mentioned second distribution of above-mentioned the first semiconductor chip and above-mentioned the second semiconductor chip has carried out flip-chip connection mutually.
In the manner, on above-mentioned the second semiconductor chip, can further be laminated with one or more semiconductor chips.
In the manner, the thickness of above-mentioned the first semiconductor chip and above-mentioned the second semiconductor chip can be 30~750 μ m in addition.
In addition in the manner, above-mentioned the first semiconductor chip and above-mentioned the second semiconductor chip can have the essentially rectangular shape that the length on each limit is 1~40mm.
In addition in the manner, it can be to have used the connection that connects projection that above-mentioned flip-chip connects, and above-mentioned connection projection can comprise at least one metal being selected from the group that silver, copper and scolding tin forms.
In the manner, the spacing of the above-mentioned distribution of above-mentioned the first semiconductor chip and the above-mentioned distribution of above-mentioned the second semiconductor chip can be respectively 5~200 μ m in addition.
In the manner, the gap of the above-mentioned distribution of above-mentioned the first semiconductor chip and the above-mentioned distribution of above-mentioned the second semiconductor chip can be respectively 5~100 μ m in addition.
In addition in the manner, the bonding force slip at 260 ℃ between the above-mentioned intermediary substrate while placing 48 hours under 80 ℃ of temperature, relative humidity 60% condition and above-mentioned the first semiconductor chip is preferably below 30%.The reflux-resisting welded property of such semiconductor device is excellent.Such slip can be realized by forming the first resin bed with the bonding agent that contains specific solder flux described later in addition.
In the manner, above-mentioned the first semiconductor chip while placing 48 hours under 80 ℃ of temperature, relative humidity 60% condition and the bonding force slip between above-mentioned the second semiconductor chip are preferably below 30% in addition.The reflux-resisting welded property of such semiconductor device is excellent.Such slip can be realized by forming the first resin bed with the bonding agent that contains specific solder flux described later in addition.
In addition in the manner, above-mentioned the first resin bed and/or above-mentioned the second resin bed are preferably selected from 2-methylglutaric acid, dimethyl succinic acid, 2 by containing, the solidfied material of the bonding agent of at least one solder flux in the group that 2-dimethylated pentanedioic acid and 3,3-dimethylated pentanedioic acid form forms.By adopting such resin bed, can meet the regulation of above-mentioned bonding force slip, can obtain the semiconductor device of reflux-resisting welded property excellence.
The effect of utility model
According to the utility model, can provide the semiconductor device of reflux-resisting welded property and connection reliability excellence.
Accompanying drawing explanation
Fig. 1 means the constructed profile of the semiconductor device of the first execution mode.
Fig. 2 means the constructed profile of the semiconductor device of the second execution mode.
Fig. 3 means the constructed profile of the semiconductor device of the 3rd execution mode.
Symbol description
1: semiconductor chip, 2: distribution, 3: circuit substrate, 4: distribution, 5: resin bed, 6: electrode pad, 7: solder ball, 11: the first semiconductor chips, 12: distribution, 13: the second semiconductor chips, 14: distribution, 15: resin bed, 21: intermediary substrate, 22: distribution, 23: electrode pad, 24: solder ball, 25: the first resin beds, 31: the first semiconductor chips, 32: the first distributions, 33: the second distributions, 34: through electrode, 35: the second resin beds, 41: the second semiconductor chips, 42: the three distributions, 43: the four distributions, 44: through electrode, 45: the three resin beds, 51: the three semiconductor chips, 52: the five distributions, 100, 110, 120: semiconductor device.
Embodiment
Below, optionally with reference to accompanying drawing, on one side preferred implementation of the present utility model is elaborated on one side.In addition, in accompanying drawing, to identical or considerable part, give same-sign, and omit repeat specification.In addition, the dimensional ratios of accompanying drawing is not limited to illustrated ratio.
The first execution mode of the present utility model relates to a kind of semiconductor device, and it possesses circuit substrate and the resin bed between semiconductor chip and circuit substrate of semiconductor chip, configuration relative to semiconductor chip.In the semiconductor device of the first execution mode, semiconductor chip and circuit substrate have distribution on respect to one another, and the distribution of semiconductor chip and the distribution of circuit substrate have carried out flip-chip connection mutually.
Fig. 1 means the constructed profile of the semiconductor device of the first execution mode.The semiconductor device 100 of Fig. 1 possesses circuit substrate 3 and the resin bed 5 between semiconductor chip 1 and circuit substrate 3 of semiconductor chip 1, configuration relative to semiconductor chip 1.In semiconductor device 100, semiconductor chip 1 has respectively distribution 2 and distribution 4 on relative face with circuit substrate 3, and the distribution 2 of semiconductor chip 1 has carried out flip-chip with the distribution of circuit substrate 34 and has been connected.
The thickness of semiconductor chip 1 can be for example 30~750 μ m, can be also 30~400 μ m.In addition, semiconductor chip 1 can have the essentially rectangular shape that the length on each limit is 1~40mm.
Circuit substrate 3 can be for example organic substrate.As organic substrate, the flat board forming such as materials such as can enumerating the fiberglass reinforced plastics such as high-molecular organic material, glass fiber reinforced epoxy resin such as adopting polyimide resin, BT resin (bismaleimide-triazine resin), stereoscopic article, film etc.In addition, when circuit substrate 3 is organic substrate, in the face of circuit substrate, the thermal coefficient of expansion of direction is preferably 2~20.
The distribution 4 of circuit substrate 3 for example can comprise at least one metal being selected from the group that silver, copper and scolding tin forms.
The spacing of the distribution 4 of circuit substrate 3 can be for example 5~200 μ m, can be also 5~150 μ m.The gap of the distribution 4 of circuit substrate 3 can be for example 5~100 μ m, can be also 5~80 μ m.
The solder ball 7 that circuit substrate 3 has electrode pad 6 and arranges on electrode pad 6 on the face of the contrary side of the face with being equipped with semiconductor chip 1 in addition, can be connected with other circuit member.
In the semiconductor device 100 of Fig. 1, be shown as the distribution 2 of semiconductor chip 1 and the distribution 4 of circuit substrate 3 is directly connected, but in present embodiment, the distribution 2 of semiconductor chip 1 can be also the connection being situated between by connecting projection with being connected of the distribution 4 of circuit substrate 3.
Connect projection and for example can comprise at least one metal being selected from the group that silver, copper and scolding tin forms.Connect in addition projection before semiconductor device is manufactured, can be arranged on the distribution 2 of semiconductor chip 1, also can be arranged on the distribution 4 of circuit substrate 3.
Circuit substrate 3 can have resist pattern, although not shown in Fig. 1.
Resin bed 5 is layers that the solidfied material by bonding agent forms, and semiconductor chip 1 and circuit substrate 3 are engaged.Resin bed 5 is preferably the solidfied material of the bonding agent that comprises specific solder flux (for example, being selected from 2-methylglutaric acid, dimethyl succinic acid, 2, at least one solder flux in the group that 2-dimethylated pentanedioic acid and 3,3-dimethylated pentanedioic acid form) described later.Thus, can realize bonding force slip described later is the semiconductor device below 30%.
The slip of bonding force (bonding forces at 260 ℃) when semiconductor device 100 is placed 48 hours under 80 ℃ of temperature, relative humidity 60% condition, between semiconductor chip 1 and circuit substrate 3 is preferably below 30%.The reflux-resisting welded property of such semiconductor device 100 is more excellent.
The second execution mode of the present utility model relates to a kind of semiconductor device, and it possesses the second semiconductor chip and the resin bed between the first semiconductor chip and the second semiconductor chip of the first semiconductor chip, configuration relative to the first semiconductor chip.In the semiconductor device of the second execution mode, the first semiconductor chip and the second semiconductor chip have distribution on respect to one another, and the distribution of the distribution of the first semiconductor chip and the second semiconductor chip has carried out flip-chip connection mutually.
Fig. 2 means the constructed profile of the semiconductor device of the second execution mode.The semiconductor device 110 of Fig. 2 possesses: on interarea, have the first semiconductor chip 11 of distribution 12, second semiconductor chip 13 on interarea with distribution 14 and the resin bed 15 between the first semiconductor chip 11 and the second semiconductor chip 13.The first semiconductor chip 11 is configured according to the mode relative with the interarea with distribution 14 of the interarea with distribution 12 with the second semiconductor chip 13, and distribution 12 and distribution 14 have carried out flip-chip connection.
The thickness of the first semiconductor chip 11 and the second semiconductor chip 13 can be roughly the same also can be different, can be for example 30~750 μ m, can be also 30~400 μ m.In addition, the flat shape of the first semiconductor chip 11 need not be necessarily identical with the flat shape of the second semiconductor chip 13.The first semiconductor chip 11 and the second semiconductor chip 13 for example can have the essentially rectangular shape that the length on each limit is 1~40mm.
The spacing of the distribution 12 of the first semiconductor chip 11 and the distribution 14 of the second semiconductor chip 13 can be respectively 5~200 μ m, can be also 5~150 μ m.In addition, the gap of the distribution 12 of the first semiconductor chip 11 and the distribution 14 of the second semiconductor chip 13 can be respectively 5~100 μ m, can be also 5~80 μ m.
In the semiconductor device 110 of Fig. 2, be shown as the distribution 12 of the first semiconductor chip 11 and the distribution 14 of the second semiconductor chip 13 is directly connected, but in present embodiment, distribution 12 can be also the connection being situated between by connecting projection with being connected of distribution 14.
Connect projection and for example can comprise at least one metal being selected from the group that silver, copper and scolding tin forms.Connect in addition projection before semiconductor device is manufactured, can be arranged on the distribution 12 of the first semiconductor chip 11, also can be arranged on the distribution 14 of the second semiconductor chip 13.
The slip of bonding force (bonding forces at 260 ℃) when semiconductor device 110 is placed 48 hours under 80 ℃ of temperature, relative humidity 60% condition, between the first semiconductor chip 11 and the second semiconductor chip 13 is preferably below 30%.The reflux-resisting welded property of such semiconductor device 110 is more excellent.
The 3rd execution mode of the present utility model relates to a kind of semiconductor device, possesses: on interarea, there is the intermediary substrate of distribution, on intermediary substrate across the first stacked semiconductor chip of the first resin bed and on the first semiconductor chip across the second stacked semiconductor chip of the second resin bed.In the semiconductor device of the 3rd execution mode, the first semiconductor chip has the first distribution of arranging on the interarea relative with intermediary substrate, the second distribution arranging on the face of the opposition side of this interarea and connects the first distribution and the through electrode of above-mentioned the second distribution.In addition, the second semiconductor chip has the 3rd distribution that arranges on the interarea relative with the first semiconductor chip, the 4th distribution arranging on the face of the opposition side of this interarea and the through electrode that connects the 3rd distribution and the 4th distribution.And the first distribution of the distribution of intermediary substrate and the first semiconductor chip has carried out flip-chip connection mutually, the 3rd distribution of the second distribution of the first semiconductor chip and the second semiconductor chip has carried out flip-chip connection mutually.
Fig. 3 means the constructed profile of the semiconductor device of the 3rd execution mode.The semiconductor device 120 of Fig. 3 possesses: on interarea, there is the intermediary substrate 21 of distribution 22, on intermediary substrate 21 across the first stacked semiconductor chip 31 of the first resin bed 25, on the first semiconductor chip 31 across the second stacked semiconductor chip 41 of the second resin bed 35 and on the second semiconductor chip 41 across the 3rd stacked semiconductor chip 51 of the 3rd resin bed 45.
The first semiconductor chip 31 has the first distribution 32 of arranging on the interarea relative with intermediary substrate 21, the second distribution 33 arranging on the face of the opposition side of this interarea and the through electrode 34 that connects the first distribution 32 and the second distribution 33.In addition, the second semiconductor chip 41 has the 3rd distribution 42 that arranges on the interarea relative with the first semiconductor chip 31, the 4th distribution 43 arranging on the face of the opposition side of this interarea and the through electrode 44 that connects the 3rd distribution 42 and the 4th distribution 43.In addition, the 3rd semiconductor chip 51 has the 5th distribution 52 arranging on the interarea relative with the second semiconductor chip 41.
And distribution 22 and the first distribution 32, the second distribution 33 and the 3rd distribution 42 and the 4th distribution 43 and the 4th distribution 52 have carried out respectively flip-chip connection.
In the semiconductor device 120 of Fig. 3, on intermediary substrate 21, be laminated with 3 semiconductor chips, but the stacked number of semiconductor chip is not limited thereto.
The first semiconductor chip 31, the second semiconductor chip 41 and the 3rd semiconductor chip 51 can be respectively roughly the same shapes, can be also different shapes.For example, the thickness of each semiconductor chip 31,41,51 can be 30~750nm, can be also 30~400 μ m.In addition, the essentially rectangular shape that the length that each semiconductor chip 31,41,51 can have each limit is 1~40mm.
The spacing of the distribution of each semiconductor chip 31,41,51 can be for example 5~200 μ m, can be also 5~150 μ m.In addition, the gap of the distribution of each semiconductor chip 31,41,51 can be for example 5~100 μ m, can be also 5~80 μ m.
The distribution of each semiconductor chip 31,41,51 and the distribution of intermediary substrate 21 for example can comprise at least one metal being selected from the group that silver, copper and scolding tin forms.
The solder ball 24 that intermediary substrate 21 has electrode pad 23 and arranges on electrode pad 23 on the face of the contrary side of the face with being equipped with the first semiconductor chip 31, can be connected with other circuit member.
In the semiconductor device 120 of Fig. 3, be shown as each semiconductor chip and be directly connected to obtain by distribution with intermediary substrate and conduct, but in present embodiment, the connection of each distribution can be also the connection being situated between by connecting projection.
Connect projection and for example can comprise at least one metal being selected from the group that silver, copper and scolding tin forms.Connect in addition projection before semiconductor device is manufactured, can be arranged on the distribution of each semiconductor chip, also can be arranged on the distribution 22 of intermediary substrate 21.
Resin bed the 25,35, the 45th, the layer consisting of the solidfied material of bonding agent, engages intermediary substrate 21 and each semiconductor chip.Resin bed 25,35,45 is preferably and described laterly (for example comprises specific solder flux, be selected from 2-methylglutaric acid, dimethyl succinic acid, 2, the solidfied material of bonding agent at least one solder flux in the group that 2-dimethylated pentanedioic acid and 3,3-dimethylated pentanedioic acid form).Thus, can realize bonding force slip described later below 30%.
The slip of the intermediary substrate 21 when semiconductor device 120 is placed 48 hours under 80 ℃ of temperature, relative humidity 60% condition and the bonding force (bonding forces at 260 ℃) between the first semiconductor chip 31 is preferably below 30%.The reflux-resisting welded property of such semiconductor device is excellent.Such slip for example can be realized by forming the first resin bed 25 with the bonding agent that comprises specific solder flux described later in addition.
The slip of the first semiconductor chip 31 when semiconductor device 120 is placed 48 hours under 80 ℃ of temperature, relative humidity 60% condition in addition and the bonding force (bonding forces at 260 ℃) between the second semiconductor chip 41 is preferably below 30%.The reflux-resisting welded property of such semiconductor device is excellent.Such slip for example can be realized by forming the first resin bed 35 with the bonding agent that comprises specific solder flux described later in addition.
The slip of the second semiconductor chip 41 when semiconductor device 120 is placed 48 hours under 80 ℃ of temperature, relative humidity 60% condition in addition and the bonding force (bonding forces at 260 ℃) between the second semiconductor chip 51 is preferably below 30%.The reflux-resisting welded property of such semiconductor device is excellent.Such slip for example can be realized by forming the first resin bed 45 with the bonding agent that comprises specific solder flux described later in addition.
Below, the optimal way that shows the adhesive composite that is used to form resin bed in first, second, and third execution mode of the present utility model.
Utilize the solidfied material of the adhesive composite of following optimal way, form resin bed, thereby can fully reduce the caused bonding force slip of fuchsin(e)test.
The adhesive composite > of < first method
The adhesive composite of first method contains epoxy resin and (below, is optionally called " (a) composition ".), curing agent (following, be optionally called " (b) composition ".) and have the represented group of following formula (1) compound (following, be optionally called " (c1) composition ".)。In addition, in formula (1), R
1expression is to electronics group.
Change 1
The adhesive composite of first method is used in combination above-mentioned specific solder flux ((c1) composition) and epoxy resin, therefore the solidfied material by the adhesive composite by first method forms resin bed, can easily realize the semiconductor device of reflux-resisting welded property and connection reliability excellence.
In order to improve reflux-resisting welded property, the bonding force that need to suppress after the moisture absorption under high temperature reduces.In the past, use carboxylic acid as solder flux, but during solder flux before using, the inventor etc. think, because following reason has produced bonding force reduction.
Conventionally, epoxy resin reacts with curing agent and is cured and reacts, and now as the carboxylic acid of solder flux, is introduced into this curing reaction.That is, the epoxy radicals of epoxy resin and the carboxyl of solder flux react sometimes, thereby form ester bond.Easily there is the hydrolysis that moisture absorption etc. causes etc. in this ester bond, the decomposition of this ester bond is considered to the reason that the bonding force after moisture absorption reduces.
On the other hand, the adhesive composite of first method contains (1) the represented group that has formula, possesses the compound to the carboxyl of electronics group nearby.Therefore, use the adhesive composite of first method, can fully obtain flux activity by carboxyl, even and if in the situation that having formed above-mentioned ester bond, by giving electronics group, the electron density of ester bond portion also raises, and can suppress the decomposition of ester bond.Also can think in addition, owing to there is substituting group (to electronics group) near carboxyl, therefore due to steric hindrance, carboxyl is suppressed with reacting of epoxy resin, and ester bond is difficult to generate.
Based on these reasons, if use the adhesive composite of first method, be difficult for producing the composition that moisture absorption etc. causes and change, can maintain excellent bonding force.In addition, above-mentioned effect also can be said to, and the curing reaction of epoxy resin and curing agent is difficult to be hindered by solder flux, by this effect, also can expect that the brought connection reliability that fully carries out of the curing reaction of epoxy resin and curing agent improves such effect.
The adhesive composite of first method can contain as required weight average molecular weight be more than 10000 macromolecule component (following, be optionally called " (d) composition ".)。In addition, the adhesive composite of first method can contain as required filler and (below, optionally be called " (e) composition ".)。
The adhesive composite > of < second method
The adhesive composite of second method contains epoxy resin and (below, is optionally called " (a) composition ".), curing agent (following, be optionally called " (b) composition ".) and have following formula (1-1) or (1-2) compound of represented group (following, be optionally called " (c2) composition ".)。In addition, formula (1-1) and (1-2) in, R
1to electronics group, there is a plurality of R in expression
1mutually can be the same or different.
Change 2
The adhesive composite of second method is used in combination above-mentioned specific solder flux ((c2) composition) and epoxy resin, therefore the solidfied material by the adhesive composite by second method forms resin bed, can easily realize the semiconductor device of reflux-resisting welded property and connection reliability excellence.
In order to improve reflux-resisting welded property, the bonding force that need to suppress after the moisture absorption under high temperature reduces.In the past, use carboxylic acid as solder flux, but during solder flux before using, the inventor etc. think, because following reason has produced bonding force reduction.
Conventionally, epoxy resin reacts with curing agent and is cured and reacts, and now as the carboxylic acid of solder flux, is introduced into this curing reaction.That is, the epoxy radicals of epoxy resin and the carboxyl of solder flux react sometimes, thereby form ester bond.Easily there is the hydrolysis that moisture absorption etc. causes etc. in this ester bond, the decomposition of this ester bond is considered to the reason that the bonding force after moisture absorption reduces.
On the other hand, the adhesive composite of second method contain there is formula (1-1) or (1-2) represented group, possess 2 nearby to the compound of the carboxyl of electronics group.Therefore can think, use the adhesive composite of second method, can fully obtain flux activity by carboxyl, even and if in the situation that having formed above-mentioned ester bond, to electronics group, the electron density of ester bond portion also raises, and can suppress the decomposition of ester bond by 2.Also can think in addition, due near 2 substituting groups of existence carboxyl (giving electronics group), therefore due to steric hindrance, carboxyl is suppressed with reacting of epoxy resin, is difficult to generate ester bond.
Based on these reasons, if use the adhesive composite of second method, be difficult for producing the composition that moisture absorption etc. causes and change, can maintain excellent bonding force.In addition, above-mentioned effect also can be said to, and the curing reaction of epoxy resin and curing agent is difficult to be hindered by solder flux, by this effect, also can expect that the brought connection reliability that fully carries out of the curing reaction of epoxy resin and curing agent improves such effect.
The adhesive composite of second method can contain as required weight average molecular weight be more than 10000 macromolecule component (following, be optionally called " (d) composition ".)。In addition, the adhesive composite of second method can contain as required filler and (below, optionally be called " (e) composition ".)。
Below, to forming each composition of the adhesive composite of aforesaid way, describe.In addition, in the following description, sometimes by (c1) composition and (c2) composition be referred to as " (c) composition ".
(a) composition: epoxy resin
As epoxy resin, so long as there is the epoxy resin of 2 above epoxy radicals in molecule, just can use without particular limitation.As (a) composition, for example, can use bisphenol A type epoxy resin, bisphenol f type epoxy resin, naphthalene type epoxy resin, phenol novolak type epoxy resin, cresols phenolic resin varnish type epoxy resin, phenol aralkyl-type epoxy resin, biphenyl type epoxy resin, triphenyl methane type epoxy resin, dicyclopentadiene type epoxy resin and various polyfunctional epoxy resin.They can use separately or use as mixture of more than two kinds.
(a) composition, when at high temperature connecting, inhibition decomposes and the viewpoint of generation volatile ingredient, temperature during connection is in the situation of 250 ℃, preferably using the thermogravimetric amount minimizing dose rate in the time of 250 ℃ is the epoxy resin below 5%, in the situation of 300 ℃, preferably using the thermogravimetric amount minimizing dose rate in the time of 300 ℃ is the epoxy resin below 5%.
(a) content of composition in the total amount benchmark of adhesive composite, for example, can be made as 5~75 quality %, is preferably 10~50 quality %, more preferably 15~35 quality %.
(b) composition: curing agent
As (b) composition, for example, can enumerate phenolic resins is that curing agent, acid anhydrides are that curing agent, amine are that curing agent, imidazoles are that curing agent and phosphine are curing agent.(b), when composition comprises phenolic hydroxyl group, acid anhydrides, amine or imidazoles, flux activity further improves, and can further improve connection reliability, insulating reliability.Below, each curing agent is described.
(i) phenolic resins is curing agent
As phenolic resins, it is curing agent, so long as there is the material of 2 above phenolic hydroxyl groups in molecule, be just not particularly limited, for example, can use phenol novolac resin, cresols novolac resin, phenol aralkyl resin, cresol naphthol formaldehyde condensation products, the multifunctional phenolic resins of triphenyl methane type and various multifunctional phenolic resins.They can use separately or use as mixture of more than two kinds.
Phenolic resins is that curing agent is with respect to the equivalent proportion (phenolic hydroxyl group/epoxy radicals, mol ratio) of above-mentioned (a) composition, viewpoint from good curability, cementability and storage stability, preferably 0.3~1.5, more preferably 0.4~1.0, further preferably 0.5~1.0.Equivalent proportion is 0.3 when above, has curability and improves, and the tendency that bonding force improves, is 1.5 when following, and having unreacted phenolic hydroxyl group can be excessive not remaining, and water absorption rate is suppressed to lower, the tendency of insulating reliability raising.
(ii) acid anhydrides is curing agent
As acid anhydrides, be curing agent, for example, can use hexahydrotoluene tetracarboxylic dianhydride, trimellitic anhydride, PMA acid anhydride, benzophenone tetracarboxylic dianhydride and ethylene glycol bis dehydration trimellitate.They can use separately or use as mixture of more than two kinds.
Acid anhydrides be curing agent with respect to the equivalent proportion (anhydride group/epoxy radicals, mol ratio) of above-mentioned (a) composition, from the viewpoint of good curability, cementability and storage stability, preferably 0.3~1.5, more preferably 0.4~1.0, further preferably 0.5~1.0.Equivalent proportion is 0.3 when above, has curability and improves, and the tendency that bonding force improves, is 1.5 when following, and having unreacted acid anhydrides can be excessive not remaining, and water absorption rate is suppressed to lower, the tendency of insulating reliability raising.
(iii) amine is curing agent
As amine, be curing agent, for example, can use dicyandiamide.
Amine be curing agent with respect to the equivalent proportion (amine/epoxy radicals, mol ratio) of above-mentioned (a) composition, from the viewpoint of good curability, cementability and storage stability, preferably 0.3~1.5, more preferably 0.4~1.0, further preferably 0.5~1.0.Equivalent proportion is 0.3 when above, has curability and improves, and the tendency that bonding force improves, is 1.5 when following, and having unreacted amine can be excessive not remaining, the tendency of insulating reliability raising.
(iv) imidazoles is curing agent
As imidazoles, be curing agent, for example, can enumerate 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1 benzyl 2 methyl imidazole, 1-benzyl-2-phenylimidazole, 1-cyano ethyl-2-undecyl imidazole, 1-cyano group-2-phenylimidazole, 1-cyano ethyl-2-undecyl imidazole trimellitate, 1-cyano ethyl-2-phenylimidazole trimellitate, 2,4-diaminourea-6-[ 2 '-methylimidazolyl-(1 ') ]-ethyl-s-triazine, 2,4-diaminourea-6-[ 2 '-undecyl imidazole base-(1 ') ]-ethyl-s-triazine, 2,4-diaminourea-6-[ 2 '-ethyl-4 '-methylimidazolyl-(1 ') ]-ethyl-s-triazine, 2,4-diaminourea-6-[ 2 '-methylimidazolyl-(1 ') ]-ethyl-s-triazine isocyanuric acid addition product, 2-phenylimidazole isocyanuric acid addition product, 2-phenyl-4,5-dihydroxy methylimidazole, 2-phenyl-4-methyl-5-hydroxymethyl imidazoles, addition product with epoxy resin and imidazoles.Wherein, from excellent curability, the viewpoint of storage stability and connection reliability is set out, preferred 1-cyano ethyl-2-undecyl imidazole, 1-cyano group-2-phenylimidazole, 1-cyano ethyl-2-undecyl imidazole trimellitate, 1-cyano ethyl-2-phenylimidazole trimellitate, 2, 4-diaminourea-6-[ 2 '-methylimidazolyl-(1 ') ]-ethyl-s-triazine, 2, 4-diaminourea-6-[ 2 '-ethyl-4 '-methylimidazolyl-(1 ') ]-ethyl-s-triazine, 2, 4-diaminourea-6-[ 2 '-methylimidazolyl-(1 ') ]-ethyl-s-triazine isocyanuric acid addition product, 2-phenylimidazole isocyanuric acid addition product, 2-phenyl-4, 5-dihydroxy methylimidazole and 2-phenyl-4-methyl-5-hydroxymethyl imidazoles.They may be used singly or in combination of two or more kinds and use.In addition, also they can be made to the potentiality curing agent that has carried out microencapsulation.
Imidazoles is that the content of curing agent is with respect to (a) composition 100 mass parts, preferably 0.1~20 mass parts, more preferably 0.1~10 mass parts.Imidazoles is that the content of curing agent is 0.1 mass parts when above, has the tendency that curability improves, and is 20 mass parts when following, has and can not solidify forming metal bond front attachment agent composition, is difficult for the tendency of generation bad connection.
(v) phosphine is curing agent
As phosphine, be curing agent, for example, can enumerate triphenylphosphine, tetraphenylphosphonium tetraphenyl borate, tetraphenylphosphonium four (4-aminomethyl phenyl) borate and tetraphenylphosphonium (4-fluorophenyl) borate.
Phosphine is that the content of curing agent is with respect to (a) composition 100 mass parts, preferably 0.1~10 mass parts, more preferably 0.1~5 mass parts.Phosphine is that the content of curing agent is 0.1 mass parts when above, has the tendency that curability improves, and is 10 mass parts when following, has and can not solidify forming metal bond front attachment agent composition, is difficult for the tendency of generation bad connection.
Phenolic resins is that curing agent, acid anhydrides are that curing agent and amine are that curing agent can be used separately respectively a kind or use as mixture of more than two kinds.Imidazoles is that curing agent and phosphine are that curing agent can be distinguished use separately, can be also that curing agent, acid anhydrides are that curing agent or amine are that curing agent shares with phenolic resins.
From storage stability, further improve, be difficult for there is the caused decomposition of moisture absorption, deteriorated viewpoint is set out, (b) to be preferably from phenolic resins be that curing agent, amine are that curing agent, imidazoles are that curing agent and phosphine are the curing agent of selecting the group that forms of curing agent to composition.In addition, from the viewpoint of the easiness of curing rate adjustment with utilize the voltinism of tachy steroling can realize with productivity ratio to rise to the viewpoint that short time of object is connected, (b) composition is more preferably that curing agent, amine are that curing agent and imidazoles are the curing agent of selecting the group that forms of curing agent from phenolic resins.
It is that curing agent, acid anhydrides are that curing agent or amine are in the situation of curing agent as (b) composition that adhesive composite comprises phenolic resins, can demonstrate the flux activity of removing oxide-film, more improves connection reliability.
(c1) composition: the compound with the represented group of formula (1)
(c1) composition is that the compound with the represented group of formula (1) (is optionally called " flux compounds (c1) " below.)。(c1) composition is the compound with flux activity, in the adhesive composite of first method, as solder flux, works.As (c1) composition, can use separately a kind of flux compounds (c1), flux compounds that also two or more kinds may be used (c1).
Change 3
In formula (1), R
1expression is to electronics group.
As giving electronics group, for example, can enumerate alkyl, hydroxyl, amino, alkoxyl and alkyl amino.As giving electronics group, the group that preferably for example, is difficult to reaction with other compositions (, (a) epoxy resin of composition), particularly, preferred alkyl, hydroxyl or alkoxyl, more preferably alkyl.
Give electronics group to electronics grow time, there is the tendency that easily obtains the effect that above-mentioned inhibition ester bond decomposes.In addition, while giving the steric hindrance of electronics group large, easily obtain the effect that above-mentioned inhibition carboxyl reacts with epoxy resin.Have well to electronics and steric hindrance to the preferred balance of electronics group.
As alkyl, the alkyl of preferred carbon number 1~10, the more preferably alkyl of carbon number 1~5.The carbon number of alkyl is more, more has to electronics and steric hindrance and becomes large tendency.Carbon number is the alkyl of above-mentioned scope, gives the balance of electronics and steric hindrance excellent, if therefore use this alkyl, effect of the present utility model can be brought into play more significantly.
In addition, alkyl can be that straight chain shape can be also chain, but preferred straight chain shape wherein.When alkyl is straight chain shape, from giving the viewpoint of the balance of electronics and steric hindrance, the carbon number of alkyl is preferably below the carbon number of main chain of flux compounds (c1).For example, flux compounds (c1) is for the represented compound of following formula (2), while being the alkyl of straight chain shape to electronics group, and the carbon number of this alkyl is preferably below the carbon number (n+1) of main chain of flux compounds (c1).
As alkoxyl, the alkoxyl of preferred carbon number 1~10, the more preferably alkoxyl of carbon number 1~5.The carbon number of alkoxyl is more, more has to electronics and steric hindrance and becomes large tendency.Carbon number is the alkoxyl of above-mentioned scope, gives the balance of electronics and steric hindrance excellent, if therefore use this alkoxyl, effect of the present utility model can be brought into play more significantly.
In addition, the moieties of alkoxyl can be that straight chain shape can be also a chain, wherein preferred straight chain shape.When alkoxyl is straight chain shape, from giving the viewpoint of the balance of electronics and steric hindrance, the carbon number of alkoxyl is preferably below the carbon number of main chain of flux compounds (c1).For example, flux compounds (c1) is for the represented compound of following formula (2), while being the alkoxyl of straight chain shape to electronics group, and the carbon number of this alkoxyl is preferably below the carbon number (n+1) of main chain of flux compounds (c1).
As alkyl amino, can enumerate alkyl monosubstituted amino, dialkyl amido.As alkyl monosubstituted amino, the alkyl monosubstituted amino of preferred carbon number 1~10, the more preferably alkyl monosubstituted amino of carbon number 1~5.The moieties of alkyl monosubstituted amino can be that straight chain shape can be also a chain, is preferably straight chain shape.
As dialkyl amido, the dialkyl amido of preferred carbon number 2~20, the more preferably dialkyl amido of carbon number 2~10.The moieties of dialkyl amido can be that straight chain shape can be also a chain, is preferably straight chain shape.
Flux compounds (c1) is preferably the compound (dicarboxylic acids) with 2 carboxyls.The compound with 2 carboxyls is compared with the compound (monocarboxylic acid) with 1 carboxyl, even if the high temperature when connecting is not volatile yet, can further suppress the generation in space.In addition, when use has the compound of 2 carboxyls, compare with having used the situation of the compound with 3 above carboxyls, the viscosity rise of the adhesive composite in the time of can further suppressing keeping, during attended operation etc., can further improve the connection reliability of semiconductor device.
As flux compounds (c1), can preferably use the represented compound of following formula (2).If use the represented compound of following formula (2), can further improve reflux-resisting welded property and the connection reliability of semiconductor device.
Change 4
In formula (2), R
1expression is to electronics group, R
2represent hydrogen atom or to electronics group, n represents more than 0 or 1 integer, has a plurality of R
2mutually can be the same or different.
N in formula (2) is preferably more than 1.N is 1 when above, compares with the situation that n is 0, even the high temperature when connecting, flux compounds (c1) is not volatile yet, can further suppress the generation in space.In addition, the n in formula (2) is preferably below 15,, below 11, can be more preferably also below 6 or below 4.N is 15 when following, can obtain more excellent connection reliability.
In addition, as flux compounds (c1), the represented compound of following formula (3) more preferably.If use the represented compound of following formula (3), can further improve reflux-resisting welded property and the connection reliability of semiconductor device.
Change 5
In formula (3), R
1expression is to electronics group, R
2represent hydrogen atom or to electronics group, m represents more than 0 or 1 integer.
M in formula (3) is preferably below 10, more preferably below 5, more preferably below 3.M is 10 when following, can obtain more excellent connection reliability.
In formula (3), R
2can be that hydrogen atom can be also to electronics group.R
2during for hydrogen atom, there is the tendency of fusing point step-down, sometimes can more improve the connection reliability of semiconductor device.In addition, R
1with R
2for different while giving electronics group, with R
1with R
2for the identical situation of giving electronics group, compare, there is the tendency of fusing point step-down, sometimes can more improve the connection reliability of semiconductor device.
In the represented compound of formula (3), as R
2for the compound of hydrogen atom, can enumerate dimethyl succinic acid, 2-methylglutaric acid, 2-methyl adipic acid, 2-methyl pimelic acid, 2-methyl suberic acid etc.If use these compounds, can further improve the connection reliability of semiconductor device.In addition, in these compounds, particularly preferably dimethyl succinic acid and 2-methylglutaric acid.
In addition, in formula (3), R
1with R
2for identical, while giving electronics group, become symmetrical structure, there is the tendency that fusing point uprises, but in this case, also can fully obtain effect of the present utility model.At fusing point, be particularly below 150 ℃, the in the situation that of fully low, even R
1with R
2for identical group, also can obtain and R
1with R
2connection reliability for not isoplastic situation same degree.
As flux compounds (c1), for example, can use 2 replacements at the dicarboxylic acids of selecting from succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, decanedioic acid, heneicosanedioic acid and dodecanedioic acid to have the compound to electronics group.
(c2) composition: there is formula (1-1) or (1-2) compound of represented group
(c2) composition for have formula (1-1) or (1-2) compound of represented group (following, be optionally called " flux compounds (c2) ".)。(c2) composition is the compound with flux activity, in the adhesive composite of second method, as solder flux, works.As (c2) composition, can use separately a kind of flux compounds (c2), flux compounds that also two or more kinds may be used (c2).
Change 6
Formula (1-1) and (1-2) in, R
1to electronics group, there is a plurality of R in expression
1mutually can be the same or different.
As giving electronics group, for example, can enumerate alkyl, hydroxyl, amino, alkoxyl and alkyl amino.As giving electronics group, the group that preferably for example, is difficult to reaction with other compositions (, (a) epoxy resin of composition), particularly, preferred alkyl, hydroxyl or alkoxyl, more preferably alkyl.
Give electronics group to electronics grow time, there is the tendency that easily obtains the effect that above-mentioned inhibition ester bond decomposes.In addition, while giving the steric hindrance of electronics group large, easily obtain the effect that above-mentioned inhibition carboxyl reacts with epoxy resin.Have well to electronics and steric hindrance to the preferred balance of electronics group.
As alkyl, the alkyl of preferred carbon number 1~10, the more preferably alkyl of carbon number 1~5.The carbon number of alkyl is more, more has to electronics and steric hindrance and becomes large tendency.Carbon number is the alkyl of above-mentioned scope, gives the balance of electronics and steric hindrance excellent, if therefore use this alkyl, effect of the present utility model can be brought into play more significantly.
In addition, alkyl can be that straight chain shape can be also a chain, wherein preferred straight chain shape.When alkyl is straight chain shape, from giving the viewpoint of the balance of electronics and steric hindrance, the carbon number of alkyl is preferably below the carbon number of main chain of flux compounds (c2).For example, flux compounds (c2) for following formula (2-1) or (2-2) represented compound, while being the alkyl of straight chain shape to electronics group, the carbon number of this alkyl is preferably the carbon number (n of the main chain of flux compounds (c2)
1+ 1 or n
2+ 2) below.
As alkoxyl, the alkoxyl of preferred carbon number 1~10, the more preferably alkoxyl of carbon number 1~5.The carbon number of alkoxyl is more, more has to electronics and steric hindrance and becomes large tendency.Carbon number is the alkoxyl of above-mentioned scope, gives the balance of electronics and steric hindrance excellent, if therefore use this alkoxyl, effect of the present utility model can be brought into play more significantly.
In addition, the moieties of alkoxyl can be that straight chain shape can be also a chain, wherein preferred straight chain shape.When alkoxyl is straight chain shape, from giving the viewpoint of the balance of electronics and steric hindrance, the carbon number of alkoxyl is preferably below the carbon number of main chain of flux compounds (c2).For example, flux compounds (c2) for following formula (2-1) or (2-2) represented compound, while being the alkoxyl of straight chain shape to electronics group, the carbon number of this alkoxyl is preferably the carbon number (n of the main chain of flux compounds (c2)
1+ 1 or n
2+ 2) below.
As alkyl amino, can enumerate alkyl monosubstituted amino, dialkyl amido.As alkyl monosubstituted amino, the alkyl monosubstituted amino of preferred carbon number 1~10, the more preferably alkyl monosubstituted amino of carbon number 1~5.The moieties of alkyl monosubstituted amino can be that straight chain shape can be also a chain, is preferably straight chain shape.
As dialkyl amido, the dialkyl amido of preferred carbon number 2~20, the more preferably dialkyl amido of carbon number 2~10.The moieties of dialkyl amido can be that straight chain shape can be also a chain, is preferably straight chain shape.
Flux compounds (c2) is preferably the compound (dicarboxylic acids) with 2 carboxyls.The compound with 2 carboxyls is compared with the compound (monocarboxylic acid) with 1 carboxyl, even if the high temperature when connecting is not volatile yet, can further suppress the generation in space.In addition, when use has the compound of 2 carboxyls, compare with having used the situation of the compound with 3 above carboxyls, the viscosity rise of the adhesive composite in the time of can further suppressing keeping, during attended operation etc., can further improve the connection reliability of semiconductor device.
As flux compounds (c2), can preferably use following formula (2-1) or (2-2) represented compound.If use following formula (2-1) or (2-2) represented compound, can further improve reflux-resisting welded property and the connection reliability of semiconductor device.
Change 7
In formula (2-1), R
1expression is to electronics group, R
2represent hydrogen atom or to electronics group, n
1represent more than 0 or 1 integer.In addition, there is a plurality of R
1mutually can be the same or different, R
2there is when a plurality of R
2mutually can be the same or different.
In formula (2-2), R
1expression is to electronics group, R
2represent hydrogen atom or to electronics group, n
2represent more than 1 integer.In addition, there is a plurality of R
1mutually can be the same or different, R
2there is when a plurality of R
2mutually can be the same or different.
N in formula (2-1)
1be preferably more than 1.N
1be 1 when above, with n
1be that 0 situation is compared, even the high temperature when connecting, flux compounds (c2) is not volatile yet, can further suppress the generation in space.In addition, the n in formula (2-1)
1being preferably below 15,, below 11,, below 9, can be more preferably more preferably also below 7 or below 5.N
1be 15 when following, can obtain more excellent connection reliability.
N in formula (2-2)
2being preferably below 14,, below 10,, below 8, can be more preferably more preferably also below 6 or below 4.N
2be 10 when following, can obtain more excellent connection reliability.
In addition, as flux compounds (c2), more preferably following formula (3-1) or (3-2) represented compound.If use following formula (3-1) or (3-2) represented compound, can further improve reflux-resisting welded property and the connection reliability of semiconductor device.
Change 8
In formula (3-1), R
1expression is to electronics group, R
2represent hydrogen atom or to electronics group, m
1represent more than 0 or 1 integer.There is a plurality of R
1and R
2can be the same or different each other.
In formula (3-2), R
1expression is to electronics group, R
2represent hydrogen atom or to electronics group, m
2represent more than 0 or 1 integer.There is a plurality of R
1and R
2can be the same or different each other.
M in formula (3-1)
1be preferably below 10, more preferably below 8, more preferably below 6.M
1be 10 when following, can obtain more excellent connection reliability.
M in formula (3-1)
2be preferably below 9, more preferably below 7, more preferably below 5.M
2be 9 when following, can obtain more excellent connection reliability.
When flux compounds (c2) is unsymmetric structure, there is the tendency of fusing point step-down, sometimes can more improve the connection reliability of semiconductor device.When flux compounds (c2) is symmetrical structure, there is the tendency that fusing point uprises, but in this case, also can fully obtain effect of the present utility model.Particularly fusing point is in 150 ℃ of following, fully low situations, even if flux compounds (c2) is symmetrical structure, also can obtain the connection reliability with the situation same degree of unsymmetric structure.Here, symmetrical structure refers to, for example R in formula (3-1)
1and R
2for situation of identical group etc.
In formula (3-1) and formula (3-2), R
2be preferably hydrogen atom.Such compound is the flux compounds (c2) of unsymmetric structure, if use such compound, can further improve the connection reliability of semiconductor device.
As flux compounds (c2), for example, can use 2 replacements at the dicarboxylic acids of selecting from succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, decanedioic acid, heneicosanedioic acid and dodecanedioic acid to have 2 to the compound of electronics group.
In addition, as flux compounds (c2), for example, also can use 3 replacements at the dicarboxylic acids of selecting from glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, decanedioic acid, heneicosanedioic acid and dodecanedioic acid to have 2 to the compound of electronics group.
(c) fusing point of composition is preferably below 150 ℃, more preferably below 140 ℃, further preferably below 130 ℃.(c) composition so easily fully showed flux activity before the curing reaction of initial ring epoxy resins and curing agent.Therefore,, if use the adhesive composite that contains such (c) composition, can make more reliably above-mentioned semiconductor device, and can realize the more excellent semiconductor device of connection reliability.In addition, (c) fusing point of composition preferably more than 25 ℃, more preferably more than 50 ℃.In addition, (c) composition is preferably solid under room temperature (25 ℃).
(c) fusing point of composition can be measured with general fusing point test device.Measure the sample of fusing point, require to be ground into micropowder and use trace, to reduce the temperature deviation in sample.As the container of sample, most capillaries that use one end sealing, also have by determinator and sandwich in 2 microscope slide glass and as the container of container.In addition, while making temperature sharply increase, produce temperature gradient and produce evaluated error between sample and thermometer, the mode that is heated to be 1 ℃ of following climbing per minute during therefore preferably according to measurement fusing point is measured.
Due to furnishing micropowder as previously mentioned, therefore, because of the sample of surperficial diffuse reflection before causing melting opaque.Conventionally the outward appearance of sample is started to the temperature of transparence as the lower-limit point of fusing point, using the temperature melting completely as upper change point.There is variform in determinator, but the most classic device can be used the capillary of sample the device heating in hot bath are housed in Double-pipe type thermometer.For object capillaceous is installed in Double-pipe type thermometer, can use liquid that viscosity is high as the liquid of hot bath, the most concentrated sulfuric acids or silicone oil of using, according to occurring that in accumulating of thermometer front end the mode of sample installs near place.In addition, as fusing point test device, also can use and utilize the heat block of metal to heat, while measure the device that the transmitance of light is adjusted heating and automatically determined fusing point.
In addition, in this specification, fusing point is that 150 ℃ of upper change points that refer to below fusing point are below 150 ℃, and fusing point is that 25 ℃ of lower-limit point that refer to above fusing point are more than 25 ℃.
(c) content of composition, in the total amount benchmark of adhesive composite, is preferably 0.5~10 quality %, more preferably 0.5~5 quality %.
(d) composition: weight average molecular weight is more than 10000 macromolecule component
It is more than 10000 macromolecule components ((d) composition) that adhesive composite can contain weight average molecular weight as required.Thermal endurance and the film-shaped of the adhesive composite that contains (d) composition become second nature more excellent.
As (d) composition, for example, from can obtain excellent thermal endurance, film-shaped becomes second nature and the viewpoint of connection reliability, preferably phenoxy resin, polyimide resin, polyamide, polycarbodiimide resin, cyanate ester resin, acrylic resin, mylar, polyvinyl resin, polyethersulfone resin, polyetherimide resin, polyvinyl acetal resin, polyurethane resin and acrylic rubber.Wherein, from thermal endurance and the film-shaped more excellent viewpoint that becomes second nature, more preferably phenoxy resin, polyimide resin, acrylic rubber, acrylic resin, cyanate ester resin and polycarbodiimide resin, further preferably phenoxy resin, polyimide resin, acrylic rubber and acrylic resin.These (d) compositions also can be used separately or as mixture of more than two kinds, copolymer and use.But (d) in composition, do not contain the epoxy resin as (a) composition.
(d) weight average molecular weight of composition is more than 10000, is preferably more than 20000, more preferably more than 30000.If use such (d) composition, thermal endurance and the film-shaped that can further improve adhesive composite become second nature.
In addition, (d) weight average molecular weight of composition is preferably below 1000000, more preferably below 500000.If use such (d) composition, can obtain the such effect of high-fire resistance.
In addition, above-mentioned weight average molecular weight represents to use GPC(gel permeation chromatography, Gel Permeation Chromatography) weight average molecular weight that measure, polystyrene conversion.An example that below shows the condition determination of GPC method.
Install: HCL-8320GPC, UV-8320(trade name Cao ,Dong company system) or HPLC-8020(trade name Cao ,Dong company system)
Chromatographic column: TSKgel superMultiporeHZ-M * 2 or 2 GMHXL+1 prop up G-2000XL
Detector: RI or UV detector
Chromatogram column temperature: 25~40 ℃
Elutriant: the solvent of selecting to dissolve macromolecule component.For example, THF(oxolane), DMF(N, dinethylformamide), DMA(N, N-dimethylacetylamide), NMP(N-methyl pyrrolidone), toluene.In addition, select to have in the situation of solvent of polarity, the concentration of phosphoric acid can be adjusted into 0.05~0.1mol/L(and be generally 0.06mol/L), the concentration of LiBr be adjusted into 0.5~1.0mol/L(be generally 0.63mol/L).
Flow velocity: 0.30~1.5mL/ divides
Standard substance: polystyrene
When adhesive composite contains (d) composition, (a) the content C of composition
acontent C with respect to (d) composition
dratio C
a/ C
d(mass ratio) is preferably 0.01~5, and more preferably 0.05~3, more preferably 0.1~2.By making to compare C
a/ C
dbe more than 0.01, can obtain better curability and bonding force, by making to compare C
a/ C
dbe below 5, can obtain better film-shaped and become second nature.
(e) composition: filler
Adhesive composite can contain filler ((e) composition) as required.Use (e) composition, can control the viscosity of adhesive composite, the physical property of the solidfied material of adhesive composite etc.Particularly, if use (e) composition, the inhibition that the space in the time of can realizing such as connection produces is, the reduction of the hydroscopicity of the solidfied material of adhesive composite etc.
As (e) composition, can use insulating properties inorganic filler, whisker, resin extender etc.In addition, as (e) composition, can be used alone or two or more kinds may be used.
As insulating properties inorganic filler, for example, can enumerate glass, silicon dioxide, aluminium oxide, titanium oxide, carbon black, mica and boron nitride.Wherein, preferred silicon dioxide, aluminium oxide, titanium oxide and boron nitride, more preferably silicon dioxide, aluminium oxide and boron nitride.
As whisker, for example, can enumerate aluminium borate, aluminium titanates, zinc oxide, calcium silicates, magnesium sulfate and boron nitride.
As resin extender, for example, can enumerate the filler of resins such as comprising polyurethane, polyimides.
Resin extender and organic principle (epoxy resin with curing agent etc.) are compared, and coefficient of thermal expansion is little, so the raising effect of connection reliability is excellent.In addition, if use resin extender, can easily carry out the viscosity adjustment of adhesive composite.In addition, resin extender is compared with inorganic filler, and the function that relaxes stress is excellent, if therefore use resin extender, and peeling off in the time of can further suppressing Reflow Soldering test etc.
Inorganic filler is compared with resin extender, and coefficient of thermal expansion is little, if therefore use inorganic filler, can realize the low-thermal-expansion rate of adhesive composite.In addition, in inorganic filler, majority is to utilize universal product to carry out the product that particle diameter is controlled gained, therefore also preferred viscosities adjustment.
Resin extender and inorganic filler have respectively favourable effect, therefore can use any one according to purposes, also can the two be mixed and be used in order to show the function of the two.
(e) shape of composition, particle diameter and content are not particularly limited.In addition, (e) composition also can suitably have been adjusted physical property by surface treatment.
(e) content of composition, in the total amount benchmark of adhesive composite, is preferably 10~80 quality %, more preferably 15~60 quality %.
(e) composition preferably consists of insulant.(e), when composition for example, consists of conductive material (, scolding tin, gold, silver, copper etc.), insulating reliability (particularly HAST patience) likely reduces.
(other compositions)
In adhesive composite, can also coordinate the additives such as antioxidant, silane coupler, titanium coupling agent, levelling agent, ion trap agent.They can use separately a kind or two or more is used in combination.About their use level, as long as be suitably adjusted to the effect that shows each additive.
Adhesive composite can be shaped to film-form and on semiconductor wafer, circuit substrate, intermediary substrate etc.In addition, also can use resin varnish described later, be coated on semiconductor wafer, circuit substrate, intermediary substrate etc. upper, form bond layer.Below, an example that shows the manufacture method of the resin film that has used adhesive composite.
First, by (a) composition, (b) composition and (c) composition and (d) composition, (e) that add as required becomes to grade and adds in organic solvent, by be uniformly mixed, mixing etc., make its dissolving or dispersion, thereby modulate resin varnish.Afterwards, on the base film that the demoulding processes, use after the coating resin varnish such as doctor knife coater, roll coater, applicator having implemented, by heating, remove organic solvent, thereby can on base film, form resin film.
The thickness of resin film is not particularly limited, and for example, is preferably the semiconductor wafer of multilayer resin film or the height of the splicing ear that substrate has 0.5~1.5 times, and more preferably 0.6~1.3 times, more preferably 0.7~1.2 times.
The thickness of resin film is 0.5 times of height of splicing ear when above, and the caused space of not filling that can fully suppress bonding agent produces, and can further improve connection reliability.In addition, thickness is 1.5 times when following, and the amount of the bonding agent of extruding from chip join domain in the time of can fully suppressing to connect, therefore can fully prevent that bonding agent is attached in unwanted part.When the thickness of resin film is greater than 1.5 times, splicing ear must be removed a large amount of bonding agents, easily produces poor flow.In addition, with respect to the reduction (microminiaturization of projection diameter) of thin space, the caused splicing ear of spininess pinization, remove a large amount of resins the infringement of splicing ear is become to large, therefore not preferred.
Conventionally the height of splicing ear is more than 5~100 μ m, and based on this, the thickness of resin film is preferably 2.5~150 μ m, more preferably 3.5~120 μ m.
As for modulating the organic solvent of resin varnish, preferably having can be by the organic solvent of the characteristic of each composition uniform dissolution or dispersion, for example, can enumerate dimethyl formamide, dimethylacetylamide, N-methyl-2-Pyrrolidone, dimethyl sulfoxide (DMSO), diethylene glycol dimethyl ether, toluene, benzene, dimethylbenzene, methyl ethyl ketone, oxolane, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, diox, cyclohexanone and ethyl acetate.These organic solvents may be used singly or in combination of two or more.Being uniformly mixed of resin varnish when modulation, mixingly for example can carry out with mixer, puddle mixer, three-roll grinder, ball mill, ball mill or homogenizer.
As base film, as long as having the thermal endurance that can tolerate the heating condition that makes organic solvent when volatilization is just not particularly limited, can illustration polypropylene film, the polyolefin film such as poly-methyl pentene film, polyester film, polyimide film and the Polyetherimide films such as polyethylene terephthalate thin film, Polyethylene Naphthalate film.Base film is not limited to the individual layer consisting of these films, can be also the plural layers that consist of material of more than two kinds.
Drying condition when organic solvent is volatilized from coat the resin varnish base film is preferably made as the condition that organic solvent fully volatilizees, and particularly, preferably carries out the heating of 50~200 ℃, 0.1~90 minute.Preferably organic solvent is removed until be below 1.5 quality % with respect to resin film total amount.
Above, preferred implementation of the present utility model is illustrated, but the utility model is not limited to above-mentioned execution mode.
Embodiment
Below, by embodiment, be described more specifically the utility model, but the utility model is not limited to embodiment.
The compound using in each embodiment is as follows.
(a) epoxy resin
Containing the multifunctional solid epoxy of tris-phenol skeleton (japan epoxy resin Co., Ltd. system, trade name " EP1032H60 ", hereinafter referred to as " EP1032 ".)
Bisphenol F type liquid epoxy resin (japan epoxy resin Co., Ltd. system, trade name " YL983U ", hereinafter referred to as " YL983 ".)
Flexible-epoxy (japan epoxy resin Co., Ltd. system, trade name " YL7175 ", hereinafter referred to as " YL7175 ".)
(b) curing agent
2,4-diaminourea-6-[ 2 '-methylimidazolyl-(1 ') ]-ethyl-s-triazine isocyanuric acid addition product (four countries change into Co., Ltd.'s system, trade name " 2MAOK-PW ", hereinafter referred to as " 2MAOK ".)
(c1) there is the formed solder flux of compound of the represented group of formula (1)
2-methylglutaric acid (approximately 78 ℃ of Aldrich company system, fusing points)
Dimethyl succinic acid (approximately 116 ℃ of Aldrich company system, fusing points)
(c2) there is formula (1-1) or (1-2) the formed solder flux of compound of represented group
2,2-dimethylated pentanedioic acid (approximately 83 ℃ of Aldrich company system, fusing points)
3,3-dimethylated pentanedioic acid (approximately 100 ℃ of Aldrich company system, fusing points)
(d) more than 10000 macromolecule component of molecular weight
Phenoxy resin (Toto Kasei KK's system, trade name " ZX1356-2 ", Tg: approximately 71 ℃, Mw: approximately 63000, hereinafter referred to as " ZX1356 ".)
(e) filler
(e-1) inorganic filler
Silica filler (Admatechs of Co., Ltd. system, trade name " SE2050 ", average grain diameter 0.5 μ m, hereinafter referred to as " SE2050 ".)
Epoxy silane process silica filler (Admatechs of Co., Ltd. system, trade name " SE2050-SEJ ", average grain diameter 0.5 μ m, hereinafter referred to as " SE2050-SEJ ".)
Acrylic acid surface treating nano silica filler (Admatechs of Co., Ltd. system, trade name " YA050C-SM ", the about 50nm of average grain diameter, hereinafter referred to as " SM nano silicon ".)
(e-2) resin extender
Organic filler (ROHM AND HAAS Amada Co., Ltd. system, trade name " EXL-2655 ", hud typed organic fine particles, hereinafter referred to as " EXL-2655 ".)
The weight average molecular weight of macromolecule component (Mw) is obtained by GPC method.The detailed content of GPC method is as follows.
Device name: HPLC-8020(trade name Cao ,Dong company system)
Chromatographic column: 2 GMHXL+1 prop up G-2000XL
Detector: RI detector
Chromatogram column temperature: 35 ℃
Flow velocity: 1mL/ divides
Standard substance: polystyrene
(embodiment 1)
Drop into epoxy resin 3g(" EP1032 " 2.4g, " YL983 " 0.45g, " YL7175 " 0.15g), curing agent " 2MAOK " 0.1g, 2-methylglutaric acid 0.1g(0.69mmol), inorganic filler 1.9g(" SE2050 " 0.38g, " SE2050-SEJ " 0.38g, " SM nano silicon " 1.14g), resin extender (EXL-2655) 0.25g, and methyl ethyl ketone (solid constituent amount is the amount of 63 quality %), add the pearl of diameter 0.8mm and the pearl of diameter 2.0mm with solid constituent identical weight, use ball mill (Fritsch Amada Co., Ltd., planet-shaped atomizer P-7) stir 30 minutes.Afterwards, add 1.7g phenoxy resin (ZX1356), reuse ball mill and stir after 30 minutes, by filtering, by stirring pearl used, remove, obtain resin varnish.
Use miniature precision apparatus for coating (Lian Jing essence machine) that the resin varnish of gained is coated on base film (film Co., Ltd. of Di Ren Du Pont system, trade name " PurexA53 "), use cleaning oven (ESPEC system) to be dried (70 ℃/10min), obtain resin film.
(embodiment 2~4)
Except change the composition of the material using as the record of following table 1, operate similarly to Example 1, obtain the resin film of embodiment 2~4.
Use the resin film obtaining in embodiment 1~4, implement following evaluation test.
Internuncial evaluation of < initial stage >
The resin film of making in embodiment is cut into the size (long 8mm * wide 8mm * thick 0.045mm) of regulation, be pasted on glass epoxy substrate (glass epoxide base material: 420 μ m are thick, copper wiring: 9 μ m are thick) upper, use the semiconductor chip (chip size: long 7.3mm * wide 7.3mm * thick 0.15mm, bump height: copper post+scolding tin meter approximately 40 μ m, number of lugs 328) (mounting condition: 350 ℃ of crimp head temperature, 5 seconds crimping time, crimping pressure 0.5MPa) of upside-down mounting erecting device " FCB3 " (Panasonic system, trade name) mounting strap solder bump.Thus, make glass epoxy substrate and carry out with the semiconductor chip with solder bump the semiconductor device that daisy chain is formed by connecting.
Use universal instrument (ADVANTEST system, trade name " R6871E ") to measure the contact resistance value of the semiconductor device of gained, thereby evaluate the initial stage conducting after installing.The average evaluation that is 10.0~13.5 Ω by contact resistance value is connectivity good " A ", contact resistance value is that the average evaluation of 13.5~20 Ω is connectivity bad " B ", and contact resistance value is greater than the situation of 20 Ω, situation and the caused Open(resistance value of bad connection that contact resistance value is less than 10 Ω do not show) situation is all evaluated as connectivity bad " C ".
> is evaluated in < space
For the semiconductor device of making by said method, by ultrasonic wave localization diagnosis device (trade name " Insight-300 ", INSIGHT system), take appearance images, utilize scanning device GT-9300UF(EPSON company system, trade name) obtain the image of curing resin layer on chip (layer being formed by the solidfied material of resin film), use image processing software Adobe Photoshop, by tonal correction, convert black and white to and identify gap, by histogram, calculate the shared ratio in gap.Using the area of the cured resin part on chip as 100%, space generation rate is that the average evaluation below 10% is " A ", and 10~20% are evaluated as " B ", and the average evaluation more than 20% is " C ".
< scolding tin wettability evaluation >
For the semiconductor device of making by said method, observe the cross section of connecting portion, the wetting average evaluation of the above scolding tin of upper surface 90% of Cu distribution be that to be less than 90% average evaluation be " B " (soaking deficiency) for " A " (well), scolding tin wetting.
Bonding force before < moisture absorption at 260 ℃ is measured >
The resin film of making in embodiment is cut into the size (long 5mm * wide 5mm * thick 0.045mm) of regulation, at 70 ℃, be pasted on silicon (long 5mm * wide 5mm * thick 0.725mm, oxide-film apply) upper, use thermo-compressed testing machine (Hitachi changes into Techno-Plant Co., Ltd. system) to be crimped on the glass epoxy substrate (thickness 0.02mm) (crimping condition: 250 ℃ of crimp head temperature, 5 seconds crimping time, crimping pressure 0.5MPa) that has applied solder resist (sun ink system, trade name " AUS308 ").Then, in cleaning oven (ESPEC system), carry out rear solidify (175 ℃, 2h), obtain the semiconductor device as test piece.
For above-mentioned test piece, on the hot plate of 260 ℃, use bonding force determinator (DAGE company system, universal type Bonding Tester DAGE4000 type), under the condition of the instrument height 0.05mm apart from substrate, instrument speed 0.05mm/s, measure bonding force.
Bonding force after < moisture absorption at 260 ℃ is measured >
The resin film of making in embodiment is cut into the size (long 5mm * wide 5mm * thick 0.045mm) of regulation, at 70 ℃, be pasted on silicon (long 5mm * wide 5mm * thick 0.725mm, oxide-film apply) upper, use thermo-compressed testing machine (Hitachi changes into Techno-Plant Co., Ltd. system) to be crimped on the glass epoxy substrate (thickness 0.02mm) (crimping condition: 250 ℃ of crimp head temperature, 5 seconds crimping time, crimping pressure 0.5MPa) that has applied solder resist (sun ink system, trade name " AUS308 ").Then, in cleaning oven (ESPEC system), carry out rear solidify (175 ℃, 2h), obtain the semiconductor device as test piece.
Above-mentioned test piece is placed 48 hours in 85 ℃, the Constant Temperature and Humidity Chambers (ESPEC system, PR-2KP) of relative humidity 60%, after taking-up, on the hot plate of 260 ℃, use bonding force determinator (DAGE company system, universal type Bonding Tester DAGE4000 type), under the condition of the instrument height 0.05mm apart from substrate, instrument speed 0.05mm/s, measure bonding force.
The evaluation > of the reflux-resisting welded property of <
Use encapsulant (Hitachi Chemical Co., Ltd.'s system, trade name " CEL9750ZHF10 "), the semiconductor device of the method made of recording in to internuncial evaluation > by the < initial stage under 180 ℃, 6.75MPa, the condition of 90 seconds carries out mold, in cleaning oven (ESPEC system), in 175 ℃, solidify after carrying out 5 hours, obtain packaging body.Then, under JEDEC level2 condition, this packaging body is carried out after high temperature moisture absorption, packaging body is passed through 3 times in IR reflow soldering (FURUKAWA ELECTRIC system, trade name " SALAMANDER ").For the connectivity of the packaging body after Reflow Soldering, by evaluating with the same method of internuncial evaluation of above-mentioned initial stage, as the evaluation of reflux-resisting welded property.By peeling off without peeling off and connect good average evaluation for " A ", having produced, the average evaluation of bad connection is " B ".
The resistance to TCT of < evaluates (evaluation of connection reliability) >
Use encapsulant (Hitachi Chemical Co., Ltd.'s system, trade name " CEL9750ZHF10 "), the semiconductor device of the method made of recording in to internuncial evaluation > by the < initial stage under 180 ℃, 6.75MPa, the condition of 90 seconds carries out mold, in cleaning oven (ESPEC system), in 175 ℃, solidify after carrying out 5 hours, obtain packaging body.Then, this packaging body is connected with thermal cycling test machine (ETAC system, trade name " THERMAL SHOCK CHAMBER NT1200 "), flow through 1mA electric current, using 25 ℃ 2 minutes/-55 ℃ 15 minutes/25 ℃ 2 minutes/125 ℃ 15 minutes/25 ℃ 2 minutes as 1 circulation, evaluate to repeat the variation of the contact resistance after 1000 circulations.Also the average evaluation that there is no larger variation after comparing 1000 circulations with the resistance value waveform at initial stage for " A ", the average evaluation that produced difference more than 1 Ω be " B ".
< insulating reliability test (HAST test: Highly Accelerated Storage Test) >
By the resin film of making in embodiment (thickness: 45 μ m) be pasted on comb-type electrode and evaluate TEG(Hitachi Chemical Co., Ltd. system, wiring closet distance: 50 μ m) above, in cleaning oven (ESPEC system), solidify 2 hours in 175 ℃.Sample after solidifying is arranged on to accelerated life test device (HIRAYAMA company system, trade name " PL-422R8 ", condition: 130 ℃/85%RH/100 hour, 5V applied voltage) upper, measures insulation resistance.Insulation resistance after 100 hours is 10
8average evaluation more than Ω is " A ", 10
7Ω is above and be less than 10
8the average evaluation of Ω is " B ", is less than 10
7the average evaluation of Ω is " C ".
Table 1
Claims (22)
1. a semiconductor device, is characterized in that, possesses:
Semiconductor chip,
The circuit substrate of configuration relative to described semiconductor chip and
Resin bed between described semiconductor chip and described circuit substrate,
Described semiconductor chip and described circuit substrate have distribution on respect to one another,
The described distribution of described semiconductor chip and the described distribution of described circuit substrate have carried out flip-chip connection mutually.
2. semiconductor device according to claim 1, is characterized in that, the thickness of described semiconductor chip is 30~750 μ m.
3. semiconductor device according to claim 1 and 2, is characterized in that, described semiconductor chip has the rectangular shape that the length on each limit is 1~40mm.
4. semiconductor device according to claim 1 and 2, is characterized in that, described circuit substrate is organic substrate, and in the face of described circuit substrate, the thermal coefficient of expansion of direction is 2~20(1/K).
5. semiconductor device according to claim 1 and 2, is characterized in that, the described distribution of described circuit substrate is to comprise the distribution that is selected from least one metal in the group that silver, copper and scolding tin forms.
6. semiconductor device according to claim 1 and 2, is characterized in that,
Described flip-chip is connected to and has used the connection that connects projection,
Described connection projection is to comprise the connection projection that is selected from least one metal in the group that silver, copper and scolding tin forms.
7. semiconductor device according to claim 1 and 2, is characterized in that, the spacing of the described distribution of described circuit substrate is 5~200 μ m.
8. semiconductor device according to claim 1 and 2, is characterized in that, the gap of the described distribution of described circuit substrate is 5~100 μ m.
9. semiconductor device according to claim 1 and 2, is characterized in that, described circuit substrate has resist pattern.
10. a semiconductor device, is characterized in that, possesses:
The first semiconductor chip,
The second semiconductor chip of configuration relative to described the first semiconductor chip and
Resin bed between described the first semiconductor chip and described the second semiconductor chip,
Described the first semiconductor chip and described the second semiconductor chip have distribution on respect to one another,
The described distribution of described the first semiconductor chip and the described distribution of described the second semiconductor chip have carried out flip-chip connection mutually.
11. semiconductor devices according to claim 10, is characterized in that, the thickness of described the first semiconductor chip and described the second semiconductor chip is 30~750 μ m.
12. according to the semiconductor device described in claim 10 or 11, it is characterized in that, described the first semiconductor chip and described the second semiconductor chip have the rectangular shape that the length on each limit is 1~40mm.
13. according to the semiconductor device described in claim 10 or 11, it is characterized in that, described flip-chip is connected to and has used the connection that connects projection,
Described connection projection is to comprise the connection projection that is selected from least one metal in the group that silver, copper and scolding tin forms.
14. according to the semiconductor device described in claim 10 or 11, it is characterized in that, the spacing of the described distribution of described the first semiconductor chip and the described distribution of described the second semiconductor chip is respectively 5~200 μ m.
15. according to the semiconductor device described in claim 10 or 11, it is characterized in that, the gap of the described distribution of described the first semiconductor chip and the described distribution of described the second semiconductor chip is respectively 5~100 μ m.
16. 1 kinds of semiconductor devices, is characterized in that possessing:
On interarea, have distribution intermediary substrate,
On described intermediary substrate across the first stacked semiconductor chip of the first resin bed and
On described the first semiconductor chip across the second stacked semiconductor chip of the second resin bed,
Described the first semiconductor chip has: the first distribution arranging on the interarea relative with described intermediary substrate, the second distribution arranging on the face of the opposition side of this interarea and the through electrode that connects described the first distribution and described the second distribution,
Described the second semiconductor chip has: the 3rd distribution arranging on the interarea relative with described the first semiconductor chip, the 4th distribution arranging on the face of the opposition side of this interarea and the through electrode that connects described the 3rd distribution and described the 4th distribution,
Described first distribution of the described distribution of described intermediary substrate and described the first semiconductor chip has carried out flip-chip connection mutually,
Described the 3rd distribution of described second distribution of described the first semiconductor chip and described the second semiconductor chip has carried out flip-chip connection mutually.
17. semiconductor devices according to claim 16, is characterized in that, on described the second semiconductor chip, are further laminated with one or more semiconductor chips.
18. according to the semiconductor device described in claim 16 or 17, it is characterized in that, the thickness of described the first semiconductor chip and described the second semiconductor chip is 30~750 μ m.
19. according to the semiconductor device described in claim 16 or 17, it is characterized in that, described the first semiconductor chip and described the second semiconductor chip have the rectangular shape that the length on each limit is 1~40mm.
20. according to the semiconductor device described in claim 16 or 17, it is characterized in that, described flip-chip is connected to and has used the connection that connects projection,
Described connection projection is to comprise the connection projection that is selected from least one metal in the group that silver, copper and scolding tin forms.
21. according to the semiconductor device described in claim 16 or 17, it is characterized in that, the spacing of the described distribution of described the first semiconductor chip and the described distribution of described the second semiconductor chip is respectively 5~200 μ m.
22. according to the semiconductor device described in claim 16 or 17, it is characterized in that, the gap of the described distribution of described the first semiconductor chip and the described distribution of described the second semiconductor chip is respectively 5~100 μ m.
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
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JP2012-038550 | 2012-02-24 | ||
JP2012038544 | 2012-02-24 | ||
JP2012038550 | 2012-02-24 | ||
JP2012-038544 | 2012-02-24 | ||
JP2012119762 | 2012-05-25 | ||
JP2012-119762 | 2012-05-25 | ||
JP2012119759 | 2012-05-25 | ||
JP2012-119759 | 2012-05-25 | ||
PCT/JP2012/075412 WO2013125086A1 (en) | 2012-02-24 | 2012-10-01 | Adhesive for semiconductor, fluxing agent, manufacturing method for semiconductor device, and semiconductor device |
JPPCT/JP2012/075412 | 2012-10-01 | ||
JPPCT/JP2012/075414 | 2012-10-01 | ||
PCT/JP2012/075414 WO2013125087A1 (en) | 2012-02-24 | 2012-10-01 | Adhesive for semiconductor, fluxing agent, manufacturing method for semiconductor device, and semiconductor device |
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