CN203325408U - LED (Light emitting diode) pixel unit circuit and display panel - Google Patents
LED (Light emitting diode) pixel unit circuit and display panel Download PDFInfo
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- CN203325408U CN203325408U CN2013203023580U CN201320302358U CN203325408U CN 203325408 U CN203325408 U CN 203325408U CN 2013203023580 U CN2013203023580 U CN 2013203023580U CN 201320302358 U CN201320302358 U CN 201320302358U CN 203325408 U CN203325408 U CN 203325408U
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- 239000010409 thin film Substances 0.000 claims abstract description 188
- 239000003990 capacitor Substances 0.000 claims abstract description 57
- 230000006698 induction Effects 0.000 claims description 12
- 238000007599 discharging Methods 0.000 abstract description 2
- 229920001621 AMOLED Polymers 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
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- 230000009471 action Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
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- 230000008878 coupling Effects 0.000 description 3
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- 230000001808 coupling effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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Abstract
The utility model provides an LED pixel unit circuit and a display panel so as to solve the display panel uneven brightness problem caused by different threshold voltages of a thin film transistor. Meanwhile, a touch screen circuit is integrated in the pixel unit circuit so as to achieve the touch control function of the display panel. The circuit comprises a driving module. The driving module comprises a driving thin film transistor, a first switching element, a first capacitor, a second capacitor and a driving control unit. The driving control unit which comprises a matching tube having a threshold voltage matching that of the driving thin film transistor is located between the positive voltage output end of a power supply and a first node and used for maintaining the threshold voltage of the matching tube so as to compensate the threshold voltage of the driving thin film transistor by controlling the second capacitor to perform charging and discharging.
Description
Technical Field
The utility model relates to a show technical field, especially relate to a light emitting diode pixel unit circuit and display panel.
Background
Compared with a traditional liquid crystal panel, an Active Matrix-Organic Light Emitting Diode (AMOLED) display panel has the characteristics of high response speed, high contrast, wide viewing angle and the like. The pixels of the AMOLED display panel drive the light emitting display by means of the related driving circuits on the Array substrate, referring to fig. 1, fig. 1 is a prior art 2T1C pixel driving circuit. As can be seen from fig. 1, the 2T1C pixel driving circuit in the prior art includes two Thin-Film transistors (TFTs) and 1 capacitor, where the TFT M1 functions as a switch for controlling the connection between the data line and the gate of the TFT DTFT, and the TFT DTFT is a driving TFT capable of generating a driving current in a saturation state to drive the OLED to emit light. Fig. 2 is a timing diagram of the scanning signal g (n) and the gray scale voltage Vd on the data line of the pixel driving circuit shown in fig. 1, when the scanning signal is at low level, the thin film transistor M1 is turned on, the gray scale voltage Vd on the data line charges the capacitor C, when the scanning signal is at high level, the thin film transistor T1 is turned off, and the capacitor C is used for storing the gray scale voltage. Since the positive power supply voltage VDD is high, DTFT is in saturation, and the driving current I of OLED is:
I=K(Vsg-|Vth|)2=K(VDD-Vd-|Vth|)2
where Vsg is a gate-source voltage of DTFT, Vth is a threshold voltage of DTFT, VDD is a power positive voltage, Vd is a gray scale voltage on the data line, and K is a constant related to the transistor size and carrier mobility, and is determined once the TFT size and process are determined.
However, in the actual production process, even if the same process parameters are used, the threshold voltages of the TFTs at different positions of the manufactured panel may have large differences, so that the threshold saturation voltages of the TFTs at different positions are different, which causes different driving currents of the OLEDs at the same gray scale voltage, and thus, the luminance of the display panel using the circuit at different positions may have differences and the luminance uniformity is poor.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a light emitting diode pixel unit circuit and display panel for solve the uneven problem of display panel luminance that leads to because of thin-film transistor's the difference of threshold value.
The embodiment of the utility model provides a pixel unit circuit of emitting diode, the circuit includes drive module and emitting diode, wherein, drive module includes: the driving circuit comprises a driving thin film transistor, a first switching element, a first capacitor, a second capacitor and a driving control unit; wherein,
the grid electrode of the driving thin film transistor is connected with the first node, the source electrode of the driving thin film transistor is connected with the positive voltage output end of the power supply, and the drain electrode of the driving thin film transistor is connected with the anode of the light emitting diode;
the cathode of the light emitting diode is connected with the negative voltage output end of the power supply;
the first capacitor is positioned between the first node and the first switch element;
the second capacitor is positioned between the positive voltage output end of the power supply and the first node;
the first switching element is connected in series between the first capacitor and the data line;
the drive control unit comprises a matching tube of which the threshold voltage is matched with the threshold voltage of the drive thin film transistor, is positioned between the positive voltage output end of the power supply and the first node and is used for storing the threshold voltage of the matching tube in the drive control unit, which is equal to the threshold voltage of the drive thin film transistor, by controlling the charge and the discharge of the second capacitor and compensating the threshold voltage of the drive thin film transistor.
Preferably, the drive control unit includes a second switching element and a third switching element; wherein the second switching element is connected in series between the power supply positive voltage output terminal and a second node; the third switching element is connected in series between the first node and a second node that is a first connection terminal of the driving control unit.
Preferably, the driving circuit further includes a sensing module, and the sensing module includes: a fourth switching element, a fifth switching element, a third capacitor, an amplifying thin film transistor and an inductive element; wherein the fourth switching element is connected in series between the second node and the gate of the amplifying thin film transistor; the fifth switching element is connected between the drain electrode of the amplifying thin film transistor and the induction line in series; the third capacitor is connected in series between the grid electrode of the amplifying thin film transistor and the control end of the fifth switching element; the induction element is connected with the grid electrode of the amplifying thin film transistor; the drive control unit controls the third capacitor of the induction module to charge and discharge, so that the touch signal in the induction module is amplified through the amplifying thin film transistor in the induction module.
Preferably, the switching elements are all thin film transistors; specifically, the first switching element is a first thin film transistor, the second switching element is a second thin film transistor, the third switching element is a third thin film transistor, the fourth switching element is a fourth thin film transistor, and the fifth switching element is a fifth thin film transistor, specifically:
the grid electrode of the first thin film transistor is connected with the scanning signal of the pixel of the row, the source electrode of the first thin film transistor is connected with the data line, and the drain electrode of the first thin film transistor is connected with one end of the first capacitor;
the grid electrode of the second thin film transistor is connected with the control signal of the pixel in the row, the source electrode of the second thin film transistor is connected with the positive voltage output end of the power supply, and the drain electrode of the second thin film transistor is connected with the source electrode of the third thin film transistor;
the grid electrode and the drain electrode of the third thin film transistor are simultaneously connected with the first node, and the source electrode of the third thin film transistor is connected with the drain electrode of the second thin film transistor;
the grid electrode of the fourth thin film transistor is connected with the control signal of the pixel of the row, the source electrode of the fourth thin film transistor is connected with the second node, and the drain electrode of the fourth thin film transistor is connected with the grid electrode of the amplifying thin film transistor;
and the grid electrode of the fifth thin film transistor is connected with the scanning signals of the pixels in the next row, the source electrode of the fifth thin film transistor is connected with the drain electrode of the amplifying thin film transistor, and the drain electrode of the fifth thin film transistor is connected with the induction line.
The grid electrode of the amplifying thin film transistor is connected with the drain electrode of the fourth thin film transistor, the source electrode of the amplifying thin film transistor is connected with the positive voltage of the power supply, and the drain electrode of the amplifying thin film transistor is connected with the source electrode of the fifth thin film transistor;
and the third capacitor is connected between the grid of the amplifying thin film transistor and the grid of the fifth thin film transistor and used for keeping the potential of the grid of the amplifying thin film transistor so that the amplifying thin film transistor works in an amplifying region.
Preferably, all the thin film transistors are P-type thin film transistors.
Preferably, the thin film transistors are all polysilicon thin film transistors, or all amorphous silicon thin film transistors, or all oxide thin film transistors.
Preferably, the sensing element is a sensing electrode, and is used for forming a sensing capacitance with a human body when a person touches the sensing electrode.
Preferably, the third thin film transistor and the driving thin film transistor have the same size and shape.
An embodiment of the present invention provides a display panel, which includes the pixel unit circuit of the above-mentioned light emitting diode.
The embodiment of the utility model provides a pixel unit circuit includes drive module and emitting diode, be provided with drive thin film transistor, first switching element, first electric capacity, second electric capacity and drive control unit in the drive module, through the charge-discharge of drive control unit to the second electric capacity, preserve the threshold voltage of the matching pipe that is arranged in drive control unit and equals with drive thin film transistor threshold voltage and compensate threshold voltage with this, make the luminous drive current of emitting diode not influenced by the threshold voltage of drive thin film transistor, simultaneously, the voltage at second electric capacity both ends is the grid source voltage of drive thin film transistor promptly, the drive tube grid is in unsettled state during operation, the other end of electric capacity is connected in the power positive pole, the pressure differential at second electric capacity both ends is not influenced by circuit internal resistance, consequently eliminate the influence of circuit internal resistance to emitting circuit, in the pixel circuit, the driving currents of the light emitting diodes under the same gray scale voltage are consistent, and the brightness of the display panel adopting the circuit is not different, so that the uniformity of the brightness of the display panel is improved.
Drawings
FIG. 1 is a prior art 2T1C pixel driver circuit;
FIG. 2 is a timing diagram of signals at each signal terminal of the 2T1C pixel driving circuit;
fig. 3 is a circuit diagram of a pixel driving circuit according to an embodiment of the present invention;
FIG. 4 is a timing diagram of signals at each signal terminal in a pixel circuit according to an embodiment of the present invention
Fig. 5 is an equivalent circuit diagram of a first-stage pixel driving circuit according to an embodiment of the present invention;
fig. 6 is an equivalent circuit diagram of a second stage pixel driving circuit according to an embodiment of the present invention;
fig. 7 is an equivalent circuit diagram of a third-stage pixel driving circuit according to an embodiment of the present invention.
Detailed Description
The embodiment of the utility model provides a light emitting diode pixel unit circuit and display panel for solve the uneven problem of display panel luminance that leads to because of thin-film transistor's the difference of threshold value.
The present invention will be described with reference to the accompanying drawings.
Referring to fig. 3, fig. 3 is a circuit of an active matrix active organic light emitting diode pixel unit according to an embodiment of the present invention, the circuit includes: a driving module 31, a sensing module 32 and a light emitting diode 33;
specifically, the driving module 31 includes: a driving thin film transistor DTFT, a first thin film transistor T1, a first capacitor C1, a second capacitor C2, and a driving control unit 311; wherein the driving control unit 311 includes a second thin film transistor T2 and a third thin film transistor T3.
The grid electrode of the driving thin film transistor DTFT is connected with the first node P1, the source electrode of the driving thin film transistor DTFT is connected with the positive voltage VDD output end of the power supply, and the drain electrode of the driving thin film transistor DTFT is connected with the anode of the active matrix active organic light emitting diode AMOLED;
the first capacitor C1 is located between the first node P1 and the first thin film transistor T1, and specifically, one end of the first capacitor C1 is connected to the first node P1, and the other end is connected to the drain of the first thin film transistor T1;
the second capacitor C2 is positioned between the power supply positive voltage VDD output end and the first node P1;
the grid electrode of the first thin film transistor T1 is connected with the scanning signal G (n) of the pixel of the row, the source electrode is connected with the data line Ldata, and the drain electrode is connected with one end of the first capacitor C1;
the grid electrode of the second thin film transistor T2 is connected with the control signal C (n) of the pixel in the row, the source electrode of the second thin film transistor T2 is connected with the positive voltage VDD output end of the power supply, and the drain electrode of the second thin film transistor T2 is connected with the source electrode of the third thin film transistor T3;
the third tft T3 has a gate and a drain both connected to the first node P1, and a source connected to the drain of the second tft T2.
The sensing module 32 includes: a third capacitor C3, an amplifying thin film transistor ATFT, a sensing electrode 321, a fourth thin film transistor T4, and a fifth thin film transistor T5. Specifically, the method comprises the following steps:
the gate of the fourth thin film transistor T4 is connected to the control signal c (n) of the pixel in the row, the source is connected to the second node P2, and the drain is connected to the gate of the amplifying thin film transistor ATFT;
the gate of the fifth thin film transistor T5 is connected to the scanning signal G (n +1) of the next row of pixels, the source is connected to the drain of the amplifying thin film transistor ATFT, and the drain is connected to the sensing line Lsense;
the gate of the amplifying thin film transistor ATFT is connected with the drain of the fourth thin film transistor, the source of the amplifying thin film transistor ATFT is connected with the output end of the positive voltage VDD of the power supply, and the drain of the amplifying thin film transistor ATFT is connected with the source of the fifth thin film transistor;
the third capacitor C3 is connected between the gate of the amplifying thin film transistor ATFT and the gate of the fifth thin film transistor;
the sensing electrode 321 is connected to the gate of the amplifying thin film transistor ATFT, and is configured to form a sensing capacitance Cf with a human body when a person touches the sensing electrode, so that a potential of the gate of the ATFT changes, and a changing sensing current is generated.
In addition, the anode of the active matrix active organic light emitting diode AMOLED is connected with the drain electrode of the driving thin film transistor DTFT, and the cathode of the active matrix active organic light emitting diode AMOLED is connected with the power supply negative voltage VSS.
Fig. 4 is a timing diagram of each signal terminal, and the following describes an operation method of the pixel unit circuit of the active matrix organic light emitting diode according to an embodiment of the present invention with reference to fig. 4, where all the thin film transistors are turned on at a low level and turned off at a high level.
A first stage S1, see fig. 5, fig. 5 being an equivalent circuit diagram of this stage; the scan signal G (n +1) of the next row of pixels is at the high level VGH, so that the fifth thin film transistor T5 responding to the scan signal G (n +1) of the next row of pixels is turned off, and the drain electrode of the amplifying thin film transistor ATFT is in a vacant state;
the scan signal g (n) of the pixel of the row is at the low level VGL, and the control signal c (n) of the pixel of the row is at the low level VGL, so that the first tft T1, the second tft T2, the third tft T3 and the fourth tft T4 are turned on; a gray scale voltage Vd output on the data line Ldata has a gray scale voltage Vh, and charges the first capacitor C1, so that the potential at the third node P3 close to one end of the first thin film transistor T1 on the first capacitor C1 rises to Vh; meanwhile, the power supply positive voltage VDD charges the second capacitor C2 through the second thin film transistor T2 and the third thin film transistor T3 until the potential at one end of the second capacitor C2, i.e., the first node P1, rises to VDD- | Vth3|, the third thin film transistor T3 is turned off, and the power supply positive voltage VDD no longer charges the second capacitor C2, wherein Vth3 is the threshold voltage of the third thin film transistor T3. Therefore, the voltage across the first capacitor C1 is:
Vc1=VDD-|Vth3|-Vh
wherein, Vc1Vth3 is a threshold voltage of the third tft T3, which is a voltage across the first capacitor C1.
Meanwhile, the positive power voltage VDD charges the third capacitor C3, so that the potential at one end of the third capacitor C3 close to the amplifying thin film transistor ATFT, i.e. the fourth node P4, rises to VDD, and the potential at the other end of the third capacitor C3, i.e. the fifth node P5, rises to VGH, and therefore, the voltage across the third capacitor C3 is:
Vc3=VDD-VGH
wherein, Vc3Is the voltage across the third capacitor C3.
A second stage S2, see fig. 6, fig. 6 being an equivalent circuit diagram of this stage; g (n) is kept at the low level, G (n +1) is kept at the high level, and therefore, the first thin film transistor T1 is in an on state, and the fifth thin film transistor is still in an off state; c (n) transits to the high level, the second thin film transistor T2 and the fourth thin film transistor T4 are turned off, and the third thin film transistor T3 maintains a turn-off state. Since the second thin film transistor T2, the fourth thin film transistor T4, and the third thin film transistor T3 are turned off, the gate electrode of the driving thin film transistor DTFT is in a floating state; meanwhile, the voltage on the data line jumps from the high level Vh to the low level Vdata, and due to the coupling effect of the first capacitor C1, the potential at the first node P1 changes, and at this time, the potential at the gate of the driving thin film transistor DTFT is:
Vp1=VDD-|Vth3|+（Vdata-Vh）*C1/(C1+C2)
wherein Vp1 is the potential of the gate of the driving thin film transistor DTFT.
In this circuit, the third thin film transistor is the same in size and shape as the driving thin film transistor; meanwhile, since the position of the third thin film transistor T3 is very close to the position of the driving thin film transistor DTFT and the process environment is also very consistent, the electrical difference between the two caused by the process is very small, and the electrical difference between the two can be considered to be approximately the same, that is, the threshold voltage Vth3 of the third thin film transistor T3 is the same as the threshold voltage Vthd of the driving thin film transistor DTFT, and the third thin film transistor T3 can be used as a matching tube of the driving thin film transistor DTFT for compensating the threshold voltage Vthd of the driving thin film transistor DTFT together with the second capacitor C2, so as to eliminate the influence of the threshold voltage of the driving thin film transistor DTFT on the driving current.
Therefore, the potential Vp1 of the gate of the driving thin film transistor DTFT is:
Vp1=VDD-|Vthd|+（Vdata-Vh）*C1/(C1+C2)
wherein Vthd is a threshold voltage of the driving thin film transistor DTFT.
A third stage S3, see fig. 7, fig. 7 being an equivalent circuit diagram of this stage; g (n) is transited to a high level VGH, and the first thin film transistor T1 is turned off; c (n) keeps high level, the second tft T2, the fourth tft T4, and the third tft T3 are turned off, the gate of the driving tft DTFT is still in a floating state, and the potential thereof remains unchanged, and the voltage between the gate and the source of the driving tft DTFT is:
Vsg=Vs-Vp1
=VDD-[VDD-|Vthd|+（Vdata-Vh）*C1/(C1+C2)]
=(Vh-Vdata）*C1/(C1+C2)+|Vthd|；
here, Vsg is a voltage between the gate and the source of the driving thin film transistor DTFT, Vs is a potential of the source of the driving thin film transistor DTFT, and Vp1 is a potential of the gate of the driving thin film transistor DTFT.
Therefore, the saturation current through the driving thin film transistor DTFT, i.e., the light emission current I of the AMOLEDoledThe size is as follows:
Ioled=kd(Vsg-|Vthd|)2
=k[(Vh-Vdata）*C1/(C1+C2)+|Vthd|-|Vthd|]2
=kd[(Vh-Vdata）*C1/(C1+C2)]2；
where Kd is a constant related to process and drive design.
G (n +1) jumps to the low level VGL, so that the fifth thin film transistor T5 is turned on; since the fourth tft T4 is turned off and the gate of the amplifying tft ATFT is floating, when the G (n +1) potential jumps to a low level, the gate potential of the amplifying tft ATFT at the fourth node P4 also jumps downward by the coupling effect of the third capacitor C3. The magnitude of the variation in the gate potential of the amplifying tft ATFT depends on whether or not a touch operation occurs on the sensing electrode 321 connected to the gate thereof.
When a touch action occurs on the sensing electrode 321, a coupling capacitance Cf is formed between the human body and the sensing electrode 321, and therefore the potential Vp4 of the fourth node P4 is:
Vp4=VDD+（VGL-VGH）*C3/(C3+Cf)
at this time, the voltage V between the source and gate of the thin film transistor ATFT is amplified1sg is:
V1sg=Vs-Vg=Vs-Vp4
=VDD-[VDD+（VGL-VGH）*C3/(C3+Cf)]
=（VGH-VGL）*C3/(C3+Cf)；
accordingly, the magnitude of the induced current Ise passing through the induced line Lsense at this time is:
Ise=Ka(Vsg-|Vtha|)2=Ka(V1sg-|Vtha|)2
=Ka[(VGH-VGL)*C3/(C3+Cf)-|Vtha|]2
wherein Vtha is the threshold voltage of the amplifier tube, and Ka is the constant of the amplifier tube related to the process and design.
When no touch action occurs on the sensing electrode 321, the potential of the fourth node P4 is:
Vp4=VDD-（VGH-VGL）
at this time, the voltage V between the source and gate of the thin film transistor ATFT is amplified2sg is:
V2sg=Vs-Vg=Vs-Vp4
=VDD-[VDD-（VGH-VGL）]=VGH-VGL；
accordingly, the magnitude of the induced current Ise passing through the induced line Lsense at this time is:
Ise=Ka(Vsg-|Vtha|)2=Ka(V2sg-|Vtha|)2
=Ka[(VGH-VGL)-|Vtha|]2
in summary, when a touch action occurs, due to the voltage division effect of the coupling capacitor Cf, the voltage between the source and the gate of the amplifying thin film transistor ATFT becomes small, the amplifying capability of the amplifying thin film transistor ATFT is weakened, so that the Ise induced current when a touch action occurs is smaller than the Ise induced current when no touch action occurs, and therefore, the circuit can determine whether a touch action occurs at the position according to the induced current.
The embodiment of the utility model provides a display panel is still provided, display panel includes foretell active matrix initiative organic light emitting diode AMOLED pixel unit circuit.
To sum up, the embodiment of the present invention provides an active matrix AMOLED pixel unit circuit including a driving module and an induction module; the driving module is internally provided with a driving thin film transistor, a first thin film transistor, a second thin film transistor, a third thin film transistor, a first capacitor and a second capacitor, the threshold voltage of the matching tube which is equal to the threshold voltage of the driving tube is stored by controlling the charging and discharging of the second capacitor, and the threshold voltage of the driving tube is compensated, so that the driving current for driving the light-emitting diode to emit light is not influenced by the threshold voltage of the driving thin film transistor, meanwhile, the voltage at two ends of the second capacitor is the grid source voltage of the driving tube, the grid electrode of the driving tube is in a suspended state during the work, the other end of the second capacitor is connected to the positive voltage output end of the power supply, the voltage difference at two ends of the second capacitor is not influenced by the internal resistance of the circuit, therefore, the influence of the internal resistance of the circuit on the light-emitting circuit is eliminated, and the driving current of the AMOLED, the brightness of the display panel adopting the circuit is not different, and the uniformity of the brightness of the display panel is improved. Further, the utility model discloses still integrate the touch module in this circuit, the scanning signal who has multiplexed the control signal among the drive control module, responds to this control signal's second thin film transistor and this row pixel charges to the third electric capacity to through the coupling of finger touch, make finger touch signal can amplify through enlargeing thin film transistor, when not increasing circuit structure and operation complexity, fine realization display panel's touch function. In addition, a single P-type thin film transistor is adopted in the circuit, so that the complexity and the cost of the manufacturing process are reduced
It should be noted that, although the above embodiments have been described by taking a single P-type thin film transistor as an example, the above circuit can be easily changed to a single N-type thin film transistor or CMOS transistor circuit; in addition, the touch control function part can be removed, and the driving touch control circuit can be changed into a pure pixel light-emitting driving circuit. Furthermore, although the above embodiments have been described using the example of the active matrix organic light emitting diode, the present invention is not limited to the display device using the active matrix organic light emitting diode, and may be applied to display devices using other various light emitting diodes.
It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A light emitting diode pixel cell circuit, the circuit comprising a driver module and a light emitting diode, the driver module comprising: the driving circuit comprises a driving thin film transistor, a first switching element, a first capacitor, a second capacitor and a driving control unit; wherein,
the grid electrode of the driving thin film transistor is connected with the first node, the source electrode of the driving thin film transistor is connected with the positive voltage output end of the power supply, and the drain electrode of the driving thin film transistor is connected with the anode of the light emitting diode;
the cathode of the light emitting diode is connected with the negative voltage output end of the power supply;
the first capacitor is positioned between the first node and the first switch element;
the second capacitor is positioned between the positive voltage output end of the power supply and the first node;
the first switching element is connected in series between the first capacitor and the data line;
the drive control unit comprises a matching tube with the threshold voltage matched with the threshold voltage of the drive thin film transistor, is positioned between the positive voltage output end of the power supply and the first node, and is used for storing the threshold voltage of the matching tube by controlling the charge and discharge of the second capacitor and compensating the threshold voltage of the drive thin film transistor.
2. The circuit according to claim 1, wherein the drive control unit includes a second switching element and a third switching element; wherein,
the second switching element is connected in series between the positive voltage output end of the power supply and a second node which is used as a first connection end of the driving control unit;
the third switching element is connected in series between the first node and the second node.
3. The circuit of claim 2, further comprising a sensing module comprising a fourth switching element, a fifth switching element, a third capacitor, an amplifying thin film transistor, and a sensing element; wherein,
the fourth switching element is connected in series between the second node and the grid electrode of the amplifying thin film transistor;
the fifth switching element is connected between the drain electrode of the amplifying thin film transistor and the induction line in series;
the third capacitor is connected in series between the grid electrode of the amplifying thin film transistor and the control end of the fifth switching element;
the induction element is connected with the grid electrode of the amplifying thin film transistor;
the drive control unit controls the third capacitor of the induction module to charge and discharge, so that the touch signal in the induction module is amplified through the amplifying thin film transistor in the induction module.
4. The circuit of claim 3, wherein the first through fifth switching elements are first through fifth thin film transistors, respectively.
5. The circuit of claim 4,
the grid electrode of the first thin film transistor is connected with the scanning signal of the pixel of the row, the source electrode of the first thin film transistor is connected with the data line, and the drain electrode of the first thin film transistor is connected with one end of the first capacitor;
the grid electrode of the second thin film transistor is connected with the control signal of the pixel in the row, the source electrode of the second thin film transistor is connected with the positive voltage output end of the power supply, and the drain electrode of the second thin film transistor is connected with the source electrode of the third thin film transistor;
and the grid electrode and the drain electrode of the third thin film transistor are simultaneously connected with the first node, and the source electrode is connected with the drain electrode of the second thin film transistor.
6. The circuit of claim 4,
the grid electrode of the fourth thin film transistor is connected with the control signal of the pixel of the row, the source electrode of the fourth thin film transistor is connected with the second node, and the drain electrode of the fourth thin film transistor is connected with the grid electrode of the amplifying thin film transistor;
the grid electrode of the fifth thin film transistor is connected with the scanning signals of the pixels in the next row, the source electrode of the fifth thin film transistor is connected with the drain electrode of the amplifying thin film transistor, and the drain electrode of the fifth thin film transistor is connected with the sensing line;
and the grid electrode of the amplifying thin film transistor is connected with the drain electrode of the fourth thin film transistor, the source electrode of the amplifying thin film transistor is connected with the positive voltage of the power supply, and the drain electrode of the amplifying thin film transistor is connected with the source electrode of the fifth thin film transistor.
7. The circuit of any of claims 1 to 6, wherein all of the thin film transistors are P-type thin film transistors.
8. The circuit of claim 3, wherein the sensing element is a sensing electrode for forming a sensing capacitance with a human body when the human body touches the sensing electrode.
9. The circuit of claim 4, wherein the third thin film transistor is the same size and shape as the driving thin film transistor.
10. A display panel comprising the led pixel cell circuit according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203023580U CN203325408U (en) | 2013-05-29 | 2013-05-29 | LED (Light emitting diode) pixel unit circuit and display panel |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013203023580U CN203325408U (en) | 2013-05-29 | 2013-05-29 | LED (Light emitting diode) pixel unit circuit and display panel |
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| CN203325408U true CN203325408U (en) | 2013-12-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013203023580U Expired - Lifetime CN203325408U (en) | 2013-05-29 | 2013-05-29 | LED (Light emitting diode) pixel unit circuit and display panel |
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| Country | Link |
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| CN (1) | CN203325408U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103310728A (en) * | 2013-05-29 | 2013-09-18 | 京东方科技集团股份有限公司 | Light emitting diode pixel unit circuit and display panel |
| CN108174124A (en) * | 2018-01-29 | 2018-06-15 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, and detector |
-
2013
- 2013-05-29 CN CN2013203023580U patent/CN203325408U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103310728A (en) * | 2013-05-29 | 2013-09-18 | 京东方科技集团股份有限公司 | Light emitting diode pixel unit circuit and display panel |
| WO2014190617A1 (en) * | 2013-05-29 | 2014-12-04 | 京东方科技集团股份有限公司 | Light emitting diode pixel unit circuit and display panel |
| US9947267B2 (en) | 2013-05-29 | 2018-04-17 | Boe Technology Group Co., Ltd. | Light emitting diode pixel unit circuit and display panel for light emitting diode display |
| CN108174124A (en) * | 2018-01-29 | 2018-06-15 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, and detector |
| CN108174124B (en) * | 2018-01-29 | 2021-02-19 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, and detector |
| US11196954B2 (en) | 2018-01-29 | 2021-12-07 | Boe Technology Group Co., Ltd. | Pixel circuit for converting an optical signal into an electric signal comprising a storage circuit storing charge output from an amplifying circuit, and drive method thereof, and detector using the same |
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| C14 | Grant of patent or utility model | ||
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| AV01 | Patent right actively abandoned |
Granted publication date: 20131204 Effective date of abandoning: 20150520 |
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| RGAV | Abandon patent right to avoid regrant |