CN203301454U - Electronic circuit - Google Patents
Electronic circuit Download PDFInfo
- Publication number
- CN203301454U CN203301454U CN2013201654653U CN201320165465U CN203301454U CN 203301454 U CN203301454 U CN 203301454U CN 2013201654653 U CN2013201654653 U CN 2013201654653U CN 201320165465 U CN201320165465 U CN 201320165465U CN 203301454 U CN203301454 U CN 203301454U
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- China
- Prior art keywords
- circuit
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- signal
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Links
- 230000010363 phase shift Effects 0.000 claims abstract description 39
- 239000003990 capacitor Substances 0.000 claims description 17
- 238000010586 diagram Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 230000010358 mechanical oscillation Effects 0.000 description 7
- 230000010354 integration Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 2
- 230000005226 mechanical processes and functions Effects 0.000 description 2
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- NEAPKZHDYMQZCB-UHFFFAOYSA-N N-[2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]ethyl]-2-oxo-3H-1,3-benzoxazole-6-carboxamide Chemical compound C1CN(CCN1CCNC(=O)C2=CC3=C(C=C2)NC(=O)O3)C4=CN=C(N=C4)NC5CC6=CC=CC=C6C5 NEAPKZHDYMQZCB-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
- G01C19/5621—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks the devices involving a micromechanical structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
- G01C19/5614—Signal processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5776—Signal processing not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Signal Processing (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Gyroscopes (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261619604P | 2012-04-03 | 2012-04-03 | |
| US61/619,604 | 2012-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203301454U true CN203301454U (en) | 2013-11-20 |
Family
ID=49369221
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310115550.3A Active CN103368562B (en) | 2012-04-03 | 2013-04-03 | 90 degree of phase-shifting devices accurately |
| CN2013201654653U Expired - Lifetime CN203301454U (en) | 2012-04-03 | 2013-04-03 | Electronic circuit |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310115550.3A Active CN103368562B (en) | 2012-04-03 | 2013-04-03 | 90 degree of phase-shifting devices accurately |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR102048393B1 (en) |
| CN (2) | CN103368562B (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103368562A (en) * | 2012-04-03 | 2013-10-23 | 快捷半导体(苏州)有限公司 | Accurate ninety degree phase shifter |
| US9246018B2 (en) | 2010-09-18 | 2016-01-26 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
| US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
| US9278845B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope Z-axis electrode structure |
| US9352961B2 (en) | 2010-09-18 | 2016-05-31 | Fairchild Semiconductor Corporation | Flexure bearing to reduce quadrature for resonating micromachined devices |
| US9444404B2 (en) | 2012-04-05 | 2016-09-13 | Fairchild Semiconductor Corporation | MEMS device front-end charge amplifier |
| US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
| US9618361B2 (en) | 2012-04-05 | 2017-04-11 | Fairchild Semiconductor Corporation | MEMS device automatic-gain control loop for mechanical amplitude drive |
| US9802814B2 (en) | 2012-09-12 | 2017-10-31 | Fairchild Semiconductor Corporation | Through silicon via including multi-material fill |
| US9856132B2 (en) | 2010-09-18 | 2018-01-02 | Fairchild Semiconductor Corporation | Sealed packaging for microelectromechanical systems |
| US10060757B2 (en) | 2012-04-05 | 2018-08-28 | Fairchild Semiconductor Corporation | MEMS device quadrature shift cancellation |
| US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8710599B2 (en) | 2009-08-04 | 2014-04-29 | Fairchild Semiconductor Corporation | Micromachined devices and fabricating the same |
| US9095072B2 (en) | 2010-09-18 | 2015-07-28 | Fairchild Semiconductor Corporation | Multi-die MEMS package |
| EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | Through silicon via with reduced shunt capacitance |
| US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
| US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
| US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
| US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
| US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
| KR101462772B1 (en) | 2013-04-12 | 2014-11-20 | 삼성전기주식회사 | Self-oscillation circuit having means for eliminating quadrature error and method for eliminating quadrature error using the circuit |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1206110A (en) * | 1997-07-14 | 1999-01-27 | 利顿系统有限公司 | Signal processing system for inertial sensor |
| JP3363862B2 (en) * | 1999-01-22 | 2003-01-08 | キヤノン株式会社 | Gyro, camera, lens and automobile having the same |
| GB0000619D0 (en) | 2000-01-13 | 2000-03-01 | British Aerospace | Accelerometer |
| JP4336946B2 (en) * | 2003-03-20 | 2009-09-30 | セイコーエプソン株式会社 | Method and apparatus for measuring rotational angular velocity |
| JP4645013B2 (en) * | 2003-10-03 | 2011-03-09 | パナソニック株式会社 | Acceleration sensor and composite sensor using the same |
| US7895894B2 (en) | 2006-11-06 | 2011-03-01 | Seiko Epson Corporation | Driver device, physical quantity measuring device, and electronic instrument |
| JP2010190766A (en) * | 2009-02-19 | 2010-09-02 | Seiko Epson Corp | Oscillation drive device, physical quantity measurement device and electronic apparatus |
| KR102048393B1 (en) * | 2012-04-03 | 2019-11-25 | 페어차일드 세미컨덕터 코포레이션 | Accurate ninety degree phase shifter |
-
2013
- 2013-04-03 KR KR1020130036261A patent/KR102048393B1/en active Active
- 2013-04-03 CN CN201310115550.3A patent/CN103368562B/en active Active
- 2013-04-03 CN CN2013201654653U patent/CN203301454U/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9856132B2 (en) | 2010-09-18 | 2018-01-02 | Fairchild Semiconductor Corporation | Sealed packaging for microelectromechanical systems |
| US9246018B2 (en) | 2010-09-18 | 2016-01-26 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
| US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
| US9278845B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope Z-axis electrode structure |
| US9352961B2 (en) | 2010-09-18 | 2016-05-31 | Fairchild Semiconductor Corporation | Flexure bearing to reduce quadrature for resonating micromachined devices |
| US10050155B2 (en) | 2010-09-18 | 2018-08-14 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
| US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
| CN103368562B (en) * | 2012-04-03 | 2016-03-23 | 快捷半导体(苏州)有限公司 | 90 degree of phase-shifting devices accurately |
| CN103368562A (en) * | 2012-04-03 | 2013-10-23 | 快捷半导体(苏州)有限公司 | Accurate ninety degree phase shifter |
| US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
| US9444404B2 (en) | 2012-04-05 | 2016-09-13 | Fairchild Semiconductor Corporation | MEMS device front-end charge amplifier |
| US10060757B2 (en) | 2012-04-05 | 2018-08-28 | Fairchild Semiconductor Corporation | MEMS device quadrature shift cancellation |
| US9618361B2 (en) | 2012-04-05 | 2017-04-11 | Fairchild Semiconductor Corporation | MEMS device automatic-gain control loop for mechanical amplitude drive |
| US9802814B2 (en) | 2012-09-12 | 2017-10-31 | Fairchild Semiconductor Corporation | Through silicon via including multi-material fill |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102048393B1 (en) | 2019-11-25 |
| KR20130112789A (en) | 2013-10-14 |
| CN103368562A (en) | 2013-10-23 |
| CN103368562B (en) | 2016-03-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180523 Address after: Arizona, USA Patentee after: Fairchild Semiconductor Corp. Address before: 215021 Sutong Road, Suzhou Industrial Park, Suzhou, Jiangsu 1 Co-patentee before: Fairchild Semiconductor Corp. Patentee before: Fairchild Semiconductor (Suzhou) Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190725 Address after: Floor 1, Building 2, 235 Chengbei Road, Jiading District, Shanghai Patentee after: QST Corp. Address before: Arizona, USA Patentee before: Fairchild Semiconductor Corp. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: Room 307, 3rd floor, 1328 Dingxi Road, Changning District, Shanghai 200050 Patentee after: Shanghai Sirui Technology Co.,Ltd. Address before: Floor 1, building 2, No. 235, Chengbei Road, Jiading District, Shanghai, 201800 Patentee before: QST Corp. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131120 |
|
| CX01 | Expiry of patent term |