CN203179479U - Pixel unit circuit and display apparatus - Google Patents
Pixel unit circuit and display apparatus Download PDFInfo
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- CN203179479U CN203179479U CN2013202204714U CN201320220471U CN203179479U CN 203179479 U CN203179479 U CN 203179479U CN 2013202204714 U CN2013202204714 U CN 2013202204714U CN 201320220471 U CN201320220471 U CN 201320220471U CN 203179479 U CN203179479 U CN 203179479U
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- 229920001621 AMOLED Polymers 0.000 description 10
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- 239000011159 matrix material Substances 0.000 description 5
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- 229920005591 polysilicon Polymers 0.000 description 3
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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Abstract
The utility model discloses a pixel unit circuit. The pixel unit circuit comprises a driving transistor, a first transistor, a second transistor, a third transistor, a fourth transistor, a storage capacitor and a luminescent device. According to the utility model, internal compensation and external compensation can be combined to compensate the luminescent device, and the advantages of both the internal compensation and the external compensation can be obtained, such that the phenomenon of uneven color caused by unevenness or drift of the threshold voltage of an N-type depletion drive transistor or an enhanced TFT drive transistor is effectively eliminated by the internal compensation, improving the display effects, and the function of driving the attraction of the features of the TFT and the luminescent device is realized, being suitable for external compensation driving.
Description
Technical field
The utility model relates to the display technique field, relates in particular to a kind of pixel unit circuit and display device.
Background technology
Organic light emitting display diode (OLED, Organic Light-Emitting Diode) is applied in the high-performance display device more and more as a kind of current mode luminescent device.Traditional passive matrix organic light emitting display pipe (Passive Matrix OLED) needs the driving time of shorter single pixel along with the increase of display size, thereby needs to increase transient current, increases power consumption.The application of big electric current simultaneously can cause on the nano indium tin metal oxide line pressure drop excessive, and makes OLED device operating voltage too high, and then reduces its efficient.And active matrix organic light-emitting display tube (AMOLED, Active Matrix OLED) can address these problems well by the switching tube input OLED electric current of lining by line scan.
In the back plate design of AMOLED, the problem that mainly needs solution is the luminance non between the pixel unit circuit.
At first, AMOLED adopts thin film transistor (TFT) (TFT, Thin-Film Transistor) to make up pixel unit circuit and provides corresponding electric current for the OLED device.In the prior art, adopt low-temperature polysilicon film transistor or oxide thin film transistor mostly.Compare with general amorphous silicon film transistor, low-temperature polysilicon film transistor and oxide thin film transistor have higher mobility and stable properties more, are more suitable for being applied to during AMOLED shows.But because the limitation of crystallization process, the low-temperature polysilicon film transistor of making at the large-area glass substrate, usually has heterogeneity such as electrical parameters such as threshold voltage, mobilities, this heterogeneity can be converted into current difference and the luminance difference of OLED display device, and by the perception of human eye institute, i.e. look uneven phenomenon.Though the homogeneity of oxide thin film transistor technology is better, but it is similar with amorphous silicon film transistor, under long-time pressurization and high temperature, drift can appear in its threshold voltage, because the display frame difference, the threshold drift amount difference of panel each several part thin film transistor (TFT) can cause display brightness difference, because this species diversity is image-related with demonstration before, therefore often is rendered as ghost phenomena.
Second, in the large scale display application, because there is certain resistance in the backboard power lead, and the drive current of all pixels is all provided by supply voltage (ARVDD), therefore it is high than the supply voltage in territory, far field from the power supply position to compare near the supply voltage of the ARVDD power supply power supply band of position in backboard, and this phenomenon is called as power voltage-drop.Because the voltage of ARVDD is relevant with electric current, power voltage-drop also can cause the current difference of zones of different, and then produces the look uneven phenomenon when showing.Adopt the low temperature polycrystalline silicon technology of P type TFT structure pixel cell especially responsive to this problem, because its memory capacitance is connected between ARVDD and the TFT grid, the voltage of ARVDD changes, and can directly influence the voltage Vgs of drive TFT tube grid.
The 3rd, OLED device also can cause the heterogeneity of electric property owing to the thickness inequality when evaporation.For adopting N-type TFT to make up amorphous silicon or the oxide thin film transistor technology of pixel cell, its memory capacitance is connected between drive TFT grid and the OLED anode, when data voltage is transferred to grid, if each pixel OLED anode voltage difference, the grid voltage Vgs difference of actual loaded on TFT then, thus the drive current difference causes display brightness difference.
AMOLED can be divided into three major types according to driving type: digital, current type and voltage-type.Wherein digital driving method is realized GTG by the mode that TFT is controlled driving time as switch, need not to compensate heterogeneity, but its frequency of operation increases with display size and rises at double, cause very big power consumption, and reach the physics limit of design within the specific limits, therefore be not suitable for the large scale display application.Current type drives method and realizes GTG by the electric current that varies in size directly is provided to the mode of driving tube, it can compensate TFT heterogeneity and power voltage-drop preferably, but when writing low GTG signal, little electric current can cause the write time long to stray capacitance charging bigger on the data line, and this problem is especially serious and be difficult to overcome in large scale shows.Voltage-type driving method and traditional active matrix liquid crystal display (AMLCD, Active Matrix Liquid Crystal Display) driving method is similar, the voltage signal of an expression GTG is provided by drive IC, this voltage signal can be converted into the current signal of driving tube in image element circuit inside, thereby driving OLED realizes intensity gray scale, it is fast that this method has actuating speed, realize simple advantage, be fit to drive large size panel, by industry-wide adoption, but need extra TFT and the capacitor element of design to compensate the TFT heterogeneity, power voltage-drop and OLED heterogeneity.
Fig. 1 is pixel unit circuit of the prior art, and as shown in Figure 1, pixel unit circuit comprises 2 thin film transistor (TFT) T2 and T1, and 1 capacitor C, is typical voltage driven type image element circuit structure (2T1C).Wherein thin film transistor (TFT) T2 is as switching tube, with the voltage transmission on the data line to the grid as the thin film transistor (TFT) T1 of driving tube, driving tube is converted into corresponding electric current supply OLED device with this data voltage, when operate as normal, thin film transistor (TFT) T1 should be in the saturation region, provides steady current in the sweep time of delegation.Its electric current can be expressed as:
μ wherein
nBe carrier mobility, C
OXBe gate oxide electric capacity,
Be transistor breadth length ratio, V
DataBe data line signal voltage, V
OLEDBe the operating voltage of OLED device, for all pixel unit circuits are shared V
ThnFor the transistorized threshold voltage of TFT, for enhancement mode TFT, V
ThnFor on the occasion of, for depletion type TFT, V
ThnBe negative value.By following formula as can be known, if the V between the different pixels unit
ThnDifference, then electric current there are differences.If the V of pixel
ThnDrift about in time, then may cause first after-current difference, cause ghost.And because OLED device heterogeneity causes OLED operating voltage difference, also can cause current difference.
Towards compensation V
ThnThe heteropical dot structure of heterogeneity, drift and OLED has a variety of, can be divided into internal compensation and external compensation two classes usually.Internal compensation is by the threshold voltage information of TFT and capacitance stores pixel driving tube in pixel inside, and a kind of compensation way of realizing of the Vgs bias voltage that feeds back to drive TFT, Fig. 2 a is the internal compensation formula enhancement mode TFT pixel unit circuit of prior art, Fig. 2 b is the internal compensation formula depletion type TFT pixel unit circuit of prior art, shown in Fig. 2 a and Fig. 2 b, the internal compensation formula pixel unit circuit of prior art comprises a driving tube, driving tube is thin film transistor (TFT), the grid of driving tube is connected anode voltage ELVSS with source electrode, the drain electrode of driving tube connects OLED, but this structure only is applicable to the TFT of enhancement mode, and for depletion type TFT, still can conducting when the grid voltage of TFT is 0, so can not contain V in the voltage that stores of TFT
ThnInformation of voltage, thereby can't compensate V
ThnHeterogeneity.
Another kind of compensation way is external compensation, namely the TFT by pixel inside reads outside sensor circuit with the I-V characteristic of driving tube and the I-V characteristic of OLED device, thereby calculate the driving voltage value that needs compensation and feed back to a kind of mode that the chip that drives panel is realized compensation, Fig. 3 is the external compensation formula pixel unit circuit of prior art, as shown in Figure 3, the external compensation formula pixel unit circuit of prior art, comprise: active matrix organic light-emitting diode (AMOLED), show with row selector (Display row selector), sensor row selector (Sensor row selector), row reader (Column readout), Video processing large scale integrated circuit (Image processing LSI), analog to digital converter (ADC), show data (Display DATA), application-specific integrated processor (AP, ASIC Processor), wherein, described AMOLED comprises the array of pixel unit circuit, the electric current of each pixel unit circuit or voltage are exported by the row reader, as shown in Figure 3, compensating circuit is amplified in triangle frame representative between row reader and analog to digital converter, suppose with data voltage as reference voltage, when the voltage that flows out the row reader during less than reference voltage, the voltage that pixel unit circuit herein is described needs compensation, by described amplification compensating circuit the voltage that comes from the row reader is compensated, thereby compensated the driving tube of respective pixel element circuit and/or voltage or the electric current of OLED device.
Internal compensation is compared with external compensation, and quality is respectively arranged.Be subject to limited space and circuit structure, usually internal compensation can only compensate TFT threshold voltage heterogeneity and drift, and external compensation is owing to can implement than complicated algorithm by the integrated circuit (IC) chip of outside, therefore can compensate non-ideal factors such as the heterogeneity of TFT threshold voltage and mobility and OLED be aging.But the compensation range of external compensation is limited, and its bucking voltage can not surpass the maximum magnitude of data line (DATA) voltage, and can surpass the maximum magnitude of outside DATA voltage through the internal voltage driver that the internal compensation circuit obtains.If internal compensation and external compensation can be combined, then can be compatible the two advantage.
The utility model content
The utility model provides a kind of pixel unit circuit and display device, be used for to solve the problem that the pixel unit circuit of prior art can't combine internal compensation and external compensation, solve the drive transistor threshold voltage heterogeneity problem that luminescent device and respective pixel element circuit take place when compensation, and the circuit characteristic extract function with driving transistors and luminescent device, so that external compensation, finally reach the purpose of the look uneven phenomenon of eliminating display device.
A kind of pixel unit circuit that the utility model provides comprises: driving transistors, the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, memory capacitance and luminescent device, wherein,
The source electrode of described driving transistors connects described the 4th transistor drain, and drain electrode connects the described the 3rd transistorized source electrode, and grid connects an end of described memory capacitance and the drain electrode of described the first transistor;
The source electrode of described the first transistor connects described the 4th transistor drain, and drain electrode connects the grid of described driving transistors, and grid connects the scan control signal line;
The source electrode of described transistor seconds connects data line, and drain electrode connects drain electrode and the 3rd transistorized source electrode of described driving transistors, and grid connects described scan control signal line;
The described the 3rd transistorized source electrode connects the drain electrode of driving transistors, and drain electrode connects the anode of described luminescent device, and grid connects the led control signal line;
The described the 4th transistorized source electrode connects anode voltage, and drain electrode connects the source electrode of described driving transistors and the source electrode of the first transistor, and grid connects the preliminary filling control signal wire;
Described memory capacitance one end connects the grid of described driving transistors, and the other end connects described anode voltage;
The negative electrode of described luminescent device connects cathode voltage.
Further, pixel unit circuit described in the utility model, described luminescent device are organic light emitting diode device.
The utility model also provides a kind of display device, and described display device comprises pixel unit circuit described in the utility model.
The utility model provides a kind of pixel unit circuit and display device, and its beneficial effect is:
One, a kind of pixel unit circuit of providing of the utility model, comprehensively internal compensation and external compensation compensate the OLED device, the advantage that has internal compensation and external compensation simultaneously, eliminate the threshold voltage heterogeneity of N-type depletion type or enhancement mode TFT driving tube or the look uneven phenomenon that drift causes effectively by internal compensation, promote display effect, and have drive TFT characteristic and OLED characteristic extracting function, can be applicable to effectively that external compensation drives.
Two, a kind of pixel unit circuit of providing of the utility model can cause the current difference of zones of different to compensate to power voltage-drop, promotes display effect.
Three, a kind of display device of providing of the utility model owing to adopted pixel unit circuit described in the utility model, can further be eliminated the look uneven phenomenon, promotes the display effect of display device.
Description of drawings
Fig. 1 is pixel unit circuit of the prior art;
Fig. 2 is the internal compensation formula pixel unit circuit of prior art;
Fig. 3 is the external compensation formula pixel unit circuit of prior art;
Fig. 4 is the circuit diagram of the described pixel unit circuit of the utility model embodiment;
Fig. 5 is the process flow diagram of the compensation method of the described pixel unit circuit of the utility model embodiment;
Fig. 6 is the compensation method process flow diagram of pixel unit circuit under the described internal compensation pattern of the utility model embodiment;
It is the equivalent circuit diagram of pixel unit circuit under the described internal compensation pattern of the utility model embodiment among Fig. 7;
Fig. 8 is the control signal sequential chart of the compensation method of the pixel unit circuit under the described internal compensation pattern of the utility model embodiment;
Fig. 9 is the compensation method process flow diagram of pixel unit circuit under the described external compensation pattern of the utility model embodiment;
It is the equivalent circuit diagram of pixel unit circuit under the described external compensation pattern of the utility model embodiment among Figure 10;
Figure 11 is the control signal sequential chart of the compensation method of the pixel unit circuit under the described external compensation pattern of the utility model embodiment.
Embodiment
In order to understand the utility model better, below in conjunction with accompanying drawing and embodiment the utility model is further described.
The described pixel unit circuit of the utility model embodiment is mainly used in the driving compensation of luminescent device OLED, each luminescent device drives compensation by a pixel unit circuit, and each pixel unit circuit is connected described luminescent device by 5 thin film transistor (TFT)s with 1 electric capacity and constitutes.This structure can be used for inside and outside compensation simultaneously.The procedure for displaying of internal compensation is divided into 3 processes, is respectively pre-and dashes, compensates and show.External compensation is divided into 2 processes, is respectively the current draw of TFT driving tube and the current draw of luminescent device.Traditional dot structure of comparing, it can compensate threshold voltage shift, heterogeneity and the luminescent device voltage non-uniformity of enhancement mode or depletion type TFT driving tube and aging effectively.
The described pixel unit circuit of the utility model embodiment, the luminescent device of its output terminal can be AMOLED, described pixel cell compensating circuit can compensate the heterogeneity of the threshold voltage of N-type depletion type or enhancement mode TFT driving tube effectively by internal compensation, promotes display effect; And have drive TFT characteristic, luminescent device characteristic extracting function, can be applicable to effectively that external compensation drives, wherein said luminescent device refers to the OLED device, and described luminescent device characteristic refers to voltage, the current characteristics of OLED device.
Fig. 4 is the circuit diagram of the described pixel unit circuit of the utility model embodiment, as shown in Figure 4, a kind of pixel unit circuit that the utility model embodiment provides comprises: driving transistors T1, the first transistor T2, transistor seconds T3, the 3rd transistor T 4, the 4th transistor T 5, memory capacitance C
STAnd luminescent device, described luminescent device is organic light emitting diode device OLED, wherein,
Driving transistors T1 is used for driving described luminescent device, and the source electrode of described driving transistors T1 connects the drain electrode of described the 4th transistor T 5, and drain electrode connects the source electrode of described the 3rd transistor T 4, and grid connects described memory capacitance C
STAn end and the drain electrode of described the first transistor T2;
The first transistor T2 is the gauge tap of scan control signal, and the source electrode of described the first transistor T2 connects the drain electrode of described the 4th transistor T 5, and drain electrode connects the grid of described driving transistors T1, and grid connects scan control signal line SCAN;
Transistor seconds T3 is the gauge tap of scan control signal, and the source electrode of described transistor seconds T3 connects data line DATA, and drain electrode connects the drain electrode of described driving transistors T1 and the source electrode of the 3rd transistor T 4, and grid connects described scan control signal line SCAN;
The 3rd transistor T 4 is gauge tap of led control signal, and the source electrode of described the 3rd transistor T 4 connects the drain electrode of driving transistors T1, and drain electrode connects the anode of described luminescent device OLED, and grid connects led control signal line EM;
The 4th transistor T 5 is gauge tap of preliminary filling control signal, and the source electrode of described the 4th transistor T 5 connects anode voltage ELVDD, and drain electrode connects the source electrode of described driving transistors T1 and the source electrode of the first transistor T2, and grid connects preliminary filling control signal wire PR;
Memory capacitance C
ST, an end connects the grid of described driving transistors T1, and the other end connects described anode voltage ELVDD;
The negative electrode of described luminescent device OLED connects cathode voltage ELVSS.
Cathode voltage ELVSS is the cathode voltage of supplying with luminescent device, generally at-5V to the 0V scope, debug according to reality and to obtain.
Further, the compensation method of the described pixel unit circuit of the utility model embodiment, Fig. 5 is the process flow diagram of the compensation method of the described pixel unit circuit of the utility model embodiment, as shown in Figure 5, described method comprises:
Step S100 according to the working stage of luminescent device, selects compensation way, and described compensation way comprises: internal compensation mode, external compensation mode;
Step S200 if described luminescent device is in normal luminous working stage, adopts the internal compensation mode that described luminescent device is compensated;
Step S300 if described luminescent device is in the full frame working stage that resets or described luminescent device is in interframe, the working stage of demonstration free time in the ranks, adopts the external compensation mode that described luminescent device is compensated; Wherein, described luminescent device is organic light emitting diode device OLED.
Further, the compensation method of the described pixel unit circuit of the utility model embodiment, Fig. 6 is the compensation method process flow diagram of pixel unit circuit under the described internal compensation pattern of the utility model embodiment, as shown in Figure 6, among the described step S200, adopt the internal compensation mode that the concrete steps that described luminescent device compensates are comprised:
Step S210 carries out preliminary filling to the drain electrode of described driving transistors;
Step S220 carries out voltage or current compensation to the grid of described driving transistors;
Step S230 carries out voltage or current compensation to described luminescent device, makes described luminescent device keep luminous.
Further, the compensation method of the described pixel unit circuit of the utility model embodiment, among the described step S210, the step of described driving transistors being carried out preliminary filling specifically comprises:
It is low level that led control signal EM is set, and turn-offs described the 3rd transistor; It is high level that preliminary filling control signal PR is set, described the 4th transistor of conducting; It is high level that scan control signal is set, the described the first transistor of conducting and transistor seconds; The drain voltage that makes described driving transistors is data line voltage V
Data
It is the equivalent circuit diagram of pixel unit circuit under the described internal compensation pattern of the utility model embodiment among Fig. 7, shown in (a) among Fig. 7, at preliminary filling in the stage: driving transistors T1, the first transistor T2, transistor seconds T3 and transistor T 5 conductings, transistor T 4 turn-offs; The voltage of data line is the data line signal voltage V of present frame
Data, be stored in capacitor C
STElectric charge obtain discharging, make the drain electrode preliminary filling of driving transistors T1 to high level, i.e. data line voltage V
Data
Further, the compensation method of the described pixel unit circuit of the utility model embodiment, among the described step S220, the step of described driving transistors being carried out voltage or current compensation specifically comprises:
It is low level that led control signal is set, and turn-offs described the 3rd transistor; It is low level that the preliminary filling control signal is set, and turn-offs described the 4th transistor; It is high level that scan control signal is set, the described the first transistor of conducting and transistor seconds; The grid voltage that makes described driving transistors is V
Data+ V
Thn, V wherein
DataBe described data line voltage, V
ThnThreshold voltage for described driving transistors.
It is the equivalent circuit diagram of pixel unit circuit under the described internal compensation pattern of the utility model embodiment among Fig. 7, shown in (b) among Fig. 7, in compensated stage: driving transistors T1, the first transistor T2, transistor seconds T3 conducting, the 3rd transistor T 4 and the 4th transistor T 5 turn-off, the discharge of the grid of driving transistors T1 equals V until the voltage of the grid of driving transistors T1
Data+ V
Thn, at this moment, the preliminary filling transistor is compensated, be stored in memory capacitance C
STThe electric charge at two ends equals (V
ELVDD-V
Thn-V
Data) * C
ST, wherein, V
ELVDDBe the voltage of anode voltage ELVDD, C
STBe memory capacitance C
STThe gate oxide capacitance, V
ThnBe the threshold voltage of driving transistors T1, V
DataBe data line signal voltage.
Further, the compensation method of the described pixel unit circuit of the utility model embodiment among the described step S230, is carried out voltage or current compensation to described luminescent device, makes described luminescent device keep luminous step specifically to comprise:
It is high level that led control signal is set, described the 3rd transistor of conducting; It is high level that the preliminary filling control signal is set, described the 4th transistor of conducting; It is low level that scan control signal is set, and turn-offs described the first transistor and transistor seconds; Make the electric current I that inputs to described luminescent device through described driving transistors
OLEDFor:
Wherein, μ
nBe carrier mobility, C
OXBe the gate oxide electric capacity of described memory capacitance,
Be the breadth length ratio of described driving transistors, V
DataBe described data line voltage, V
OLEDAnode voltage for described luminescent device.
It is the equivalent circuit diagram of pixel unit circuit under the described internal compensation pattern of the utility model embodiment among Fig. 7, shown in (c) among Fig. 7, described luminescent device is the OLED device, in glow phase: driving transistors T1, the 3rd transistor T 4 and 5 conductings of the 4th transistor T, the first transistor T2 and transistor seconds T3 turn-off, memory capacitance C
STBe connected between the grid level and anode voltage ELVDD of driving transistors T1, keeping the grid voltage of driving transistors T1 is V
Data+ V
Thn, wherein, V
ThnBe the threshold voltage of thin film transistor (TFT) T1, V
DataBe data line signal voltage; At this moment, data line and pixel unit circuit disconnect, and along with the electric current of OLED device tends towards stability, the source voltage of driving transistors T1 becomes V
OLED, the grid voltage of driving transistors T1 remains V
Data+ V
Thn, flow through the electric current I of thin film transistor (TFT) 1 this moment
OLEDFor:
Wherein, μ
nBe carrier mobility, C
OXBe memory capacitance C
STThe gate oxide capacitance,
Be the breadth length ratio of driving transistors T1, V
DataBe data line signal voltage, V
OLEDBe the anode voltage of OLED device, i.e. the operating voltage of OLED device, V
ThnBe the threshold voltage of driving transistors T1, for enhancement mode TFT transistor, V
ThnFor on the occasion of, for depletion type TFT transistor, V
ThnBe negative value.
By following formula as can be known, the flow through electric current of driving transistors and its threshold voltage V
ThnIrrelevant, simultaneously and the voltage at luminescent device two ends also irrelevant, so eliminated the influence of threshold voltage heterogeneity, drift substantially.No matter adopt the described pixel unit circuit of the utility model embodiment, still be the thin film transistor (TFT) of depletion type for enhancement mode, can compensate heteropical influence of threshold voltage, so applicability is wider.
Fig. 8 is the control signal sequential chart of the compensation method of the pixel unit circuit under the described internal compensation pattern of the utility model embodiment, as shown in Figure 8, during internal compensation, the control sequence of described led control signal EM, preliminary filling control signal PR and scan control signal SCAN is:
In the preliminary filling stage, corresponding described step S210, led control signal EM are low level, and preliminary filling control signal PR and scan control signal SCAN are high level;
Compensated stage, corresponding described step S220, led control signal EM and preliminary filling control signal PR are low level, scan control signal SCAN is high level;
Glow phase, corresponding described step S230, led control signal EM and preliminary filling control signal PR are high level, scan control signal SCAN is low level.
In addition, the compensation method of the described pixel unit circuit of the utility model embodiment, also comprise under the external compensation mode described luminescent device is compensated, external compensation mainly occurs in the working stage of full frame resetting (PANEL RESET), perhaps interframe, the working stage of demonstration free time in the ranks, for example, the moment of for example starting shooting can be carried out full frame resetting, and the external compensation process is divided into 2 stages: the current draw of drive transistor current extraction and luminescent device.
Further, the compensation method of the described pixel unit circuit of the utility model embodiment, Fig. 9 is the compensation method process flow diagram of pixel unit circuit under the described external compensation pattern of the utility model embodiment, as shown in Figure 9, among the described step S300, adopt the external compensation mode that the step that described luminescent device compensates is specifically comprised:
Step S310 carries out current draw to described driving transistors;
Step S320 carries out current draw to described luminescent device;
Step S330 detects the electric current that described driving transistors or described luminescent device extract, and according to detected current value described light emitting diode is carried out voltage or current compensation.
Further, the compensation method of the described pixel unit circuit of the utility model embodiment, among the described step S310, the step of described driving transistors being carried out current draw specifically comprises:
It is low level that led control signal is set, and turn-offs described the 3rd transistor; It is high level that the preliminary filling control signal is set, described the 4th transistor of conducting; It is high level that scan control signal is set, the described the first transistor of conducting and transistor seconds; Make the electric current of described driving transistors input to described data line, shield the electric current that described luminescent device flows into data line simultaneously.Detect the current value of the described driving transistors of flowing through by the induction chip that is connected described data line.
The voltage of data line signal is designated as reference voltage V
REF, V
REF＜V
ELVDD, V wherein
ELVDDVoltage for power supply ELVDD; It is the equivalent circuit diagram of pixel unit circuit under the described external compensation pattern of the utility model embodiment among Figure 10, shown in (a) among Figure 10, described luminescent device is the OLED device, driving transistors T1, the first transistor T2, transistor seconds T3 and 5 conductings of the 4th transistor T, the 3rd transistor T 4 turn-offs; At this moment, OLED device and driving transistors T1 disconnect, and the grid of driving transistors T1 is biased to V to the voltage between the source electrode
ELVDD-V
REF, the drive current of driving transistors T1 flows to data line by transistor seconds T3, and the outside induction chip that makes data line connect can be responded to this current value and do further processing.
Further, the compensation method of the described pixel unit circuit of the utility model embodiment, among the described step S320, the described step that described luminescent device is carried out current draw specifically comprises:
It is high level that led control signal is set, described the 3rd transistor of conducting; It is low level that the preliminary filling control signal is set, and turn-offs described the 4th transistor; It is high level that scan control signal is set, the described transistor seconds of conducting; Make the electric current of described luminescent device input to described data line, shield the electric current that described driving transistors flows into described data line simultaneously.Detect the current value of the described luminescent device of flowing through by the induction chip that is connected described data line.
The signal voltage of data line is designated as reference voltage V
REF, V
REFV
Thn, V
ThnThreshold voltage for driving transistors T1; It is the equivalent circuit diagram of pixel unit circuit under the described external compensation pattern of the utility model embodiment among Figure 10, shown in Figure 10 (b), described luminescent device is the OLED device, the first transistor T2, transistor seconds T3 and 4 conductings of the 3rd transistor T at this moment, driving transistors T1 and the 4th transistor T 5 turn-off, and the anode of OLED device is V to the voltage difference of negative electrode
REF-V
ELVSS, the electric current that flow through the OLED device this moment inputs to data line by transistor seconds T3, and the outside induction chip that is connected to data line can be responded to this current value and do further processing.
Figure 11 is the control signal sequential chart of the compensation method of the pixel unit circuit under the described external compensation pattern of the utility model embodiment, and as shown in figure 11, the control sequence of described led control signal EM, preliminary filling control signal PR and scan control signal SCAN is:
Phase one, among the corresponding described step S310, the electric current of driving transistors T1 is extracted, led control signal EM is low level, preliminary filling control signal PR and scan control signal SCAN are high level;
Subordinate phase among the corresponding described step S320, extracts the electric current of OLED device, and led control signal EM and scan control signal SACN are high level, preliminary filling control signal PR low level.
More than as seen, this pixel unit circuit is compatible internal compensation and two kinds of mode of operations of external compensation simultaneously, so its compensation effect can have both the two a bit.
The utility model embodiment also provides a kind of display device, and described display device comprises the described pixel unit circuit of the utility model embodiment, adopts the described compensation method of the utility model embodiment that described pixel unit circuit is compensated.
It below only is preferred embodiment of the present utility model; certainly; the utility model can also have other various embodiments; under the situation that does not deviate from the utility model spirit and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the utility model, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the utility model.
Claims (3)
1. a pixel unit circuit is characterized in that, comprising: driving transistors, the first transistor, transistor seconds, the 3rd transistor, the 4th transistor, memory capacitance and luminescent device, wherein,
The source electrode of described driving transistors connects described the 4th transistor drain, and drain electrode connects the described the 3rd transistorized source electrode, and grid connects an end of described memory capacitance and the drain electrode of described the first transistor;
The source electrode of described the first transistor connects described the 4th transistor drain, and drain electrode connects the grid of described driving transistors, and grid connects the scan control signal line;
The source electrode of described transistor seconds connects data line, and drain electrode connects drain electrode and the 3rd transistorized source electrode of described driving transistors, and grid connects described scan control signal line;
The described the 3rd transistorized source electrode connects the drain electrode of driving transistors, and drain electrode connects the anode of described luminescent device, and grid connects the led control signal line;
The described the 4th transistorized source electrode connects anode voltage, and drain electrode connects the source electrode of described driving transistors and the source electrode of the first transistor, and grid connects the preliminary filling control signal wire;
Described memory capacitance one end connects the grid of described driving transistors, and the other end connects described anode voltage;
The negative electrode of described luminescent device connects cathode voltage.
2. pixel unit circuit according to claim 1 is characterized in that, described luminescent device is organic light emitting diode device.
3. a display device is characterized in that, described display device comprises claim 1 or 2 each described pixel unit circuits.
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| CN2013202204714U CN203179479U (en) | 2013-04-26 | 2013-04-26 | Pixel unit circuit and display apparatus |
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| CN2013202204714U CN203179479U (en) | 2013-04-26 | 2013-04-26 | Pixel unit circuit and display apparatus |
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