CN203150604U - Flip-Chip Light-Emitting Components - Google Patents

Abstract

The utility model provides a flip-chip light-emitting element, comprising a carrier substrate, a light-emitting diode chip and a wavelength conversion material layer. The light-emitting diode chip is flipped on the carrier substrate and electrically connected to the carrier substrate; a surface area of the carrier substrate is between 1 and 1.2 times the orthographic projection area of the light-emitting diode chip on the carrier substrate; the wavelength conversion material layer is disposed on the carrier substrate and covers the light-emitting diode chip.

Description

Flip-Chip Light-Emitting Components

technical field

The utility model relates to a light-emitting element, in particular to a flip-chip light-emitting element.

Background technique

Light-emitting diodes have advantages such as long life, small size, high shock resistance, low heat generation, and low power consumption, so they have been widely used as indicators or light sources in households and various equipment. In recent years, light-emitting diodes have been developed toward high power, so their application fields have been expanded to road lighting, large outdoor signage, traffic lights and related fields. In the future, light-emitting diodes may even become the main lighting source with both power saving and environmental protection functions.

However, the LED chip generates heat energy during operation, and if the heat energy is accumulated in the LED chip and not removed in time, the luminous efficiency of the LED chip will be reduced or even damaged. However, in order to achieve a better heat dissipation effect, the LED element often requires a larger space planning, so that the thickness, volume and weight of the LED element cannot be reduced. Therefore, how to balance the volume size and heat dissipation effect of the light-emitting diode element at the same time is the goal of the current industry.

Utility model content

The utility model provides a flip-chip light-emitting element, which has a small volume.

The utility model provides a flip-chip light-emitting element, which includes a carrier substrate, a light-emitting diode chip and a wavelength conversion material layer. The light-emitting diode chip is turned upside down on the carrier substrate and electrically connected to the carrier substrate; a surface area of the carrier substrate is between 1 and 1.2 times the area of the orthographic projection of the light-emitting diode chip on the carrier substrate; the wavelength conversion material layer configuration On the carrying substrate and covering the light emitting diode chip.

In an embodiment of the present invention, the sidewalls of the above-mentioned wavelength conversion material layer are aligned with the sidewalls of the carrier substrate.

In an embodiment of the present invention, the above-mentioned carrying substrate has a thickness ranging from 10 microns to 100 microns.

In an embodiment of the present invention, the above LED chip includes a chip substrate, a semiconductor layer and a plurality of electrodes, and the semiconductor layer is located between the chip substrate and the electrodes.

In an embodiment of the present invention, the above chip substrate is made of the same material as the carrier substrate.

In an embodiment of the present invention, the thickness of the above-mentioned carrier substrate is between 0.3 times and 0.9 times of the thickness of the chip substrate.

In an embodiment of the present invention, the above-mentioned carrying substrate has a patterned circuit layer, and the LED chips are electrically connected to the carrying substrate through the patterned circuit layer.

In an embodiment of the present invention, the above-mentioned carrying substrate has an upper surface, and the patterned circuit layer is disposed on the upper surface.

In an embodiment of the present invention, the above-mentioned carrying substrate has an upper surface, and the patterned circuit layer is embedded in the carrying substrate.

In an embodiment of the present invention, a surface of the above-mentioned patterned circuit layer is cut flush with the upper surface of the carrier substrate.

In an embodiment of the present invention, the aforementioned LED chip is a blue LED chip.

In an embodiment of the present invention, the wavelength conversion material layer is a yellow fluorescent material layer.

Based on the above, since only a single light-emitting diode chip is arranged on the carrier substrate of the present invention, and the surface area of the carrier substrate of the flip-chip light-emitting element is between 1 and 1.2 times the orthographic projection area of the light-emitting diode chip on the carrier substrate between, and the wavelength conversion material layer is arranged on the carrier substrate and covers the light emitting diode chip. Therefore, the flip-chip light-emitting element of the present invention is a single flip-chip light-emitting diode, which can have a smaller volume. In addition, the thickness of the carrying substrate of the flip-chip light-emitting element of the present invention is thinner than that of the existing carrying substrate, so the flip-chip light-emitting element of the present invention can have a better heat dissipation effect.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with accompanying drawings.

Description of drawings

FIG. 1A shows a schematic cross-sectional view of a flip-chip light-emitting element according to an embodiment of the present invention;

FIG. 1B shows a schematic top view of the flip-chip light emitting element of FIG. 1A;

FIG. 2 is a schematic cross-sectional view of a flip-chip light-emitting device according to another embodiment of the present invention.

Explanation of reference signs:

100a, 100b: flip-chip light emitting elements;

110a, 110b: carrying substrates;

111, 131: side walls;

112a, 112b: upper surface;

114a, 114b: patterned circuit layer;

115a: surface;

120: LED chip;

122: chip substrate;

123: a first-type semiconductor layer;

124: semiconductor layer;

125: luminous layer;

126: first electrode;

127: the second type semiconductor layer;

128: second electrode;

130: wavelength conversion material layer;

T, t: thickness.

Detailed ways

FIG. 1A is a schematic cross-sectional view of a flip-chip light emitting device according to an embodiment of the present invention. FIG. 1B shows a schematic top view of the flip-chip light emitting device in FIG. 1A . Please refer to FIG. 1A and FIG. 1B at the same time. In this embodiment, the flip-chip light emitting device 100 a includes a carrier substrate 110 a, a light emitting diode chip 120 and a wavelength conversion material layer 130 . The LED chip 120 is turned upside down on the carrier substrate 110a and is electrically connected to the carrier substrate 110a. A surface area of the carrier substrate 110 a is between 1 and 1.2 times the area of the orthographic projection of the LED chip 120 on the carrier substrate 110 a. The wavelength conversion material layer 130 is disposed on the carrier substrate 110 a and covers the LED chip 120 .

More specifically, in this embodiment, the thickness T of the carrier substrate 110a is between 10 microns and 100 microns. The carrier substrate 110a has an upper surface 112a and a patterned circuit layer 114a, wherein the LED chips 120 are electrically connected to the carrier substrate 110a through the patterned circuit layer 114a. The patterned circuit layer 114a is embedded in the carrier substrate 110a, and a surface 115a of the patterned circuit layer 114a is aligned with the upper surface 112a of the carrier substrate 110a. The LED chip 120 includes a chip substrate 122 , a semiconductor layer 124 and a plurality of electrodes 126 , 128 , wherein the semiconductor layer 124 is located between the chip substrate 122 and the electrodes 126 , 128 . Specifically, the semiconductor layer 124 is composed of a first-type semiconductor layer 123, a light-emitting layer 125, and a second-type semiconductor layer 127, wherein the electrodes 126 and 128 are respectively arranged on the first-type semiconductor layer 123 and the second-type semiconductor layer 123. on the semiconductor layer 127 , and the wavelength conversion material layer 130 fills the gap between the electrodes 126 , 128 . However, in an unshown illustration, the wavelength conversion material layer 130 may not fill the gap between the electrodes 126 and 128 , which is not limited here. In particular, the material of the chip substrate 122 in this embodiment is substantially the same as that of the carrier substrate 110a. Preferably, the material of the carrier substrate 110a is, for example, sapphire. In particular, the thickness T of the carrier substrate 110 a is smaller than the thickness t of the chip substrate 122 , more preferably, the thickness T of the carrier substrate 110 a is between 0.3 and 0.9 times the thickness t of the chip substrate 122 . In this way, the flip-chip light emitting device 100a can have a smaller volume. In addition, as shown in FIG. 1A , the sidewall 131 of the wavelength conversion material layer 130 of this embodiment is aligned with the sidewall 111 of the carrier substrate 110 a. Here, the LED chip 120 is, for example, a blue LED chip, and the wavelength conversion material layer 130 is a yellow fluorescent material layer. In other words, the flip chip light emitting device 100a of this embodiment is a flip chip white light emitting diode.

Since only a single light-emitting diode chip 120 is disposed on the carrier substrate 110a of this embodiment, and the surface area of the carrier substrate 110a of the flip-chip light-emitting element 100a ranges from one time to the normal projection area of the light-emitting diode chip 120 on the carrier substrate 110a 1.2 times, and the sidewall 131 of the wavelength conversion material layer 130 is aligned with the sidewall 111 of the carrier substrate 110a. Therefore, the flip-chip light-emitting device 100a of this embodiment is a single flip-chip light-emitting diode, and can have a smaller volume. In addition, since the thickness of the carrier substrate 110a in this embodiment is only between 10 microns and 100 microns, in more detail, compared with the conventional carrier substrates with a thickness of more than 150 microns, this embodiment can have a thinner Thickness and better heat dissipation effect.

It is worth mentioning that the present invention does not limit the structure of the patterned circuit layer 114a, although the patterned circuit layer 114a mentioned here is embodied as an embedded circuit layer. However, in other embodiments, please refer to FIG. 2 , the carrier substrate 110b of the flip-chip light emitting device 100b of this embodiment may also have a patterned circuit layer 114b disposed on the upper surface 112b, which is a general circuit layer, which is still It belongs to the technical solutions that can be adopted by the utility model, and does not depart from the intended protection scope of the utility model.

In summary, since only a single light-emitting diode chip is arranged on the carrier substrate of the present invention, and the surface area of the carrier substrate of the flip-chip light-emitting element is between 1 time and 1.2 times the orthographic projection area of the light-emitting diode chip on the carrier substrate times, and the wavelength conversion material layer is arranged on the carrier substrate and covers the light emitting diode chip. Therefore, the flip-chip light-emitting device of the present invention is a single flip-chip light-emitting diode, and can have a smaller volume. In addition, the thickness of the carrying substrate of the flip-chip light-emitting element of the present invention is thinner than that of the existing carrying substrate, so the flip-chip light-emitting element of the present invention can have a better heat dissipation effect.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present utility model, and are not intended to limit it; although the present utility model has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand : It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements to some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions depart from the various embodiments of the present invention Scope of technical solutions.

Claims (12)

1. a crystal-coated light-emitting element is characterized in that, comprising:

One bearing substrate;

One light-emitting diode chip for backlight unit overlays on this bearing substrate and electrically connects with this bearing substrate, and wherein a surface area of this bearing substrate is between this light-emitting diode chip for backlight unit 1 times to 1.2 times in the frontal projected area on this bearing substrate; And

One material for transformation of wave length layer is configured on this bearing substrate and coats this light-emitting diode chip for backlight unit.

2. crystal-coated light-emitting element according to claim 1 is characterized in that, the sidewall of this material for transformation of wave length layer trims the sidewall in this bearing substrate.

3. crystal-coated light-emitting element according to claim 1 is characterized in that, the thickness of this bearing substrate is between 10 microns to 100 microns.

4. crystal-coated light-emitting element according to claim 1 is characterized in that, this light-emitting diode chip for backlight unit comprises a chip substrate, semi-conductor layer and a plurality of electrode, and this semiconductor layer is between this chip substrate and those electrodes.

5. crystal-coated light-emitting element according to claim 4 is characterized in that, the material of this chip substrate is identical with the material of this bearing substrate.

6. crystal-coated light-emitting element according to claim 4 is characterized in that, the thickness of this bearing substrate is between between 0.3 times to 0.9 times of the thickness of this chip substrate.

7. crystal-coated light-emitting element according to claim 1 is characterized in that, this bearing substrate has a patterned line layer, and this light-emitting diode chip for backlight unit electrically connects by this patterned line layer and this bearing substrate.

8. crystal-coated light-emitting element according to claim 7 is characterized in that, this bearing substrate has a upper surface, and this patterned line layer is configured on this upper surface.

9. crystal-coated light-emitting element according to claim 7 is characterized in that, this bearing substrate has a upper surface, is embedded in this bearing substrate in this patterned line layer.

10. crystal-coated light-emitting element according to claim 9 is characterized in that, a surface of this patterned line layer trims this upper surface in this bearing substrate.

11. crystal-coated light-emitting element according to claim 1 is characterized in that, this light-emitting diode chip for backlight unit is a blue LED chip.

12. crystal-coated light-emitting element according to claim 1 is characterized in that, this material for transformation of wave length layer is a yellow fluorescent material layer.

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