CN203104253U - Modularized structure for three-electric level current transformer - Google Patents
Modularized structure for three-electric level current transformer Download PDFInfo
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- CN203104253U CN203104253U CN 201320047282 CN201320047282U CN203104253U CN 203104253 U CN203104253 U CN 203104253U CN 201320047282 CN201320047282 CN 201320047282 CN 201320047282 U CN201320047282 U CN 201320047282U CN 203104253 U CN203104253 U CN 203104253U
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Abstract
The utility model discloses a modularized structure for a three-electric level current transformer. The three-electric level current transformer comprises three signal phase three-electric level circuits which are connected in parallel, wherein each signal phase three-electric level circuit comprises a first IGBT, a second IGBT a third IGBT, a forth IGBT, a first clamping diode and a second clamping diode which are all fixed on a surface of a water channel-containing water cooling base plate. Through reasonable and symmetric layout, electric level circuit line connection is simple and succinct, an electric current return loop can be decreased to the largest extent, and therefore stray inductance of a high frequency return loop can be small in current conversion processes, and voltage surges can be lowered when IGBTs are turned off. The modularized structure for a three-electric level current transformer is characterized in that generated heat quantity difference of the IGBTs and convenience of water channel design in the three-electric level structure are fully considered, and therefore heat dissipation effects of a system can be stable.
Description
Technical field
The utility model relates to a kind of power device, relates in particular to a kind of modular construction of three-level current transformer.
Background technology
Along with the development and progress of power electronic technology, current transformer power is more and more higher.In order to improve overall system efficiency, reduce the thermal losses of system, powerful converter system is tending towards adopting the electric pressure of mesohigh.Development level in view of the current power electronic device, if continue to adopt the topological structure of two level, need the series connection of many power electronic device in the mesohigh occasion, and the series connection power electronic device static state and dynamically all the pressure problem solve the comparison difficulty, thereby the reduction whole system reliability.Three level topological structures have successfully solved the problem of all pressing owing to adopted clamp diode, make the power electronic device of low-voltage grade become possibility in the application of mesohigh converter system.Since the level of clamp capacitor control more complicated in the three level topologys of electric capacity clamper, the three level structures that adopt diode clamp in the current application more.
The IGBT(insulated gate bipolar transistor) be voltage-sensitive type device, if the stray inductance in the change of current loop is excessive, IGBT might cause overvoltage when turn-offing and damage.Especially the device of three-level current transformer is many, line is complicated, and the rational deployment of power model can effectively reduce change of current loop in the tri-level circuit, thereby reduces the stray inductance in loop.
Three-level current transformer is operated in inverter mode more, this moment outer tube loss be approximately in the pipe loss 3-4 doubly, so the design of the Homogeneouslly-radiating of power device also is the key point that can system stable operation.
Summary of the invention
The purpose of this utility model is to provide a kind of modular construction of three-level current transformer, and it can reduce current circuit effectively, and guaranteed output device Homogeneouslly-radiating, carries out system maintenance and expansion easily.
The technical scheme that realizes above-mentioned purpose is:
A kind of modular construction of three-level current transformer, described three-level current transformer comprises the single-phase tri-level circuit of three parallel connections, each single-phase tri-level circuit comprises an IGBT to the four IGBT, first clamp diode and second clamp diode, wherein, the emitter of an IGBT connects the collector electrode of the 2nd IGBT and the negative electrode of first clamp diode respectively; The emitter of the 2nd IGBT connects the collector electrode of the 3rd IGBT; The emitter of the 3rd IGBT connects the collector electrode of the 4th IGBT and the anode of second clamp diode respectively; The anode of first clamp diode connects the negative electrode of second clamp diode;
At each single-phase tri-level circuit:
A described IGBT to the four IGBT, first clamp diode and second clamp diode all are fixed on a surface that includes the water-cooling base plate of water channel;
A described IGBT to the four IGBT are individually fixed in four jiaos of described water-cooling base plate, and are the form setting at row, an IGBT and the 4th IGBT diagonal angle with an IGBT and the 2nd IGBT;
Described first clamp diode and second clamp diode are row and are fixed in the middle part of described water-cooling base plate, and the negative electrode of the negative electrode of first clamp diode and second clamp diode is correspondingly facing to an IGBT and the 2nd IGBT place side.
The modular construction of above-mentioned three-level current transformer, wherein, a described IGBT to the four IGBT all with collector electrode in the inboard, emitter is arranged in the mode in the outside.
The modular construction of above-mentioned three-level current transformer, wherein, a described IGBT to the four IGBT drive installation separately is at the side of each self-electrode.
The modular construction of above-mentioned three-level current transformer, wherein, the described water channel that is built in water-cooling base plate inside comprises vertical inlet channel, top cross water channel, bottom transverse water channel and three vertical cooling water channels, wherein:
Described vertical inlet channel is positioned at the left side of described water-cooling base plate, and its lower port connects a water inlet, and its upper port is connected described top cross water channel;
Described three vertical cooling water channels are connected described top cross water channel and bottom transverse water channel respectively, and one by one corresponding to a described IGBT and the 2nd IGBT column, first clamp diode and the second clamp diode column and the 3rd IGBT and the 4th IGBT column;
The right output port of described bottom transverse water channel connects a delivery port.
The modular construction of above-mentioned three-level current transformer, wherein, a described IGBT is positioned at the upper left corner or the upper right corner of described water-cooling base plate.
The modular construction of above-mentioned three-level current transformer, wherein, a described IGBT is positioned at the upper right corner of described water-cooling base plate; Described the 2nd IGBT is positioned at the lower right corner of described water-cooling base plate; Described the 3rd IGBT is positioned at the lower left corner of described water-cooling base plate; Described the 4th IGBT is positioned at the upper left corner of described water-cooling base plate; Described first clamp diode is positioned at the below, middle part of described water-cooling base plate; Described second clamp diode is positioned at the top, middle part of described water-cooling base plate.
The modular construction of above-mentioned three-level current transformer, wherein,
From the below of described water-cooling base plate, draw with the connecting line of the 3rd IGBT from the 2nd IGBT and to exchange lead-out wire;
From the top of described water-cooling base plate, draw the direct current main track from the collector electrode of an IGBT, draw the direct current negative wire from the emitter of the 4th IGBT, draw the direct current center line from the connecting line of first clamp diode and second clamp diode.
The modular construction of above-mentioned three-level current transformer, wherein, a described IGBT is positioned at the lower left corner of described water-cooling base plate; The 2nd IGBT is positioned at the upper left corner of described water-cooling base plate; The 3rd IGBT is positioned at the upper right corner of described water-cooling base plate; The 4th IGBT is positioned at the lower right corner of described water-cooling base plate; First clamp diode is positioned at the top, middle part of described water-cooling base plate; Second clamp diode is positioned at the below, middle part of described water-cooling base plate.
The modular construction of above-mentioned three-level current transformer, wherein,
From the top of described water-cooling base plate, draw with the connecting line of the 3rd IGBT from second and to exchange lead-out wire;
From the below of described water-cooling base plate, draw the direct current main track from the collector electrode of an IGBT, draw the direct current negative wire from the emitter of the 4th IGBT, draw the direct current center line from the connecting line of first clamp diode and second clamp diode.
The beneficial effects of the utility model are: the utility model is by with each power device layout reasonably on water-cooling base plate, make the power device of upper and lower bridge arm be symmetrically distributed, made things convenient for the design of stack bus bar, reduced change of current loop substantially, with the stray inductance in attenuating change of current loop, thereby reduce power device causes damage because of the shutoff overvoltage possibility; Simultaneously, the driving of IGBT all is positioned at the outside in the utility model, convenient debugging and maintenance; Exchange lead-out wire and draw in the bottom, the direct current section is drawn on top, can be in parallel with other easily, is convenient to the expansion of system; And, the design of water channel fully takes into account each IGBT caloric value, cooling water is flowed into by the below can effectively remove bubble, raising radiating effect, and the bigger IGBT of caloric value has guaranteed the Homogeneouslly-radiating of power device thereby the while cooling water is at first flowed through, to guarantee the stable operation of system.
Description of drawings
Fig. 1 is the principle schematic of three-level current transformer;
Fig. 2 is the structure chart of first specific embodiment of the present utility model;
Fig. 3 is the structure chart of water channel of the present utility model;
Fig. 4 is the structure chart of second specific embodiment of the present utility model.
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing.
See also Fig. 1, three-level current transformer is formed in parallel by direct current main track DC+, direct current center line DC0 and direct current negative wire DC-by three identical single-phase tri-level circuits 200, has A, B, three ac output ends of C.Direct current supports capacitor C 1, C2 is series between DC+, DC0, the DC-.
Each single-phase tri-level circuit 200 comprises that an IGBT(goes up brachium pontis outer tube IGBT) S1, the 2nd IGBT(go up pipe IGBT in the brachium pontis) pipe IGBT in the brachium pontis under S2, the 3rd IGBT() brachium pontis outer tube IGBT under S3, the 4th IGBT() S4, first clamp diode (going up clamp diode) D1 and second clamp diode (following clamp diode) D2, wherein:
The collector electrode of the one IGBT S1 connects direct current main track DC+, and the emitter of an IGBT S1 connects the collector electrode of the 2nd IGBT S2 and the negative electrode of the first clamp diode D1 respectively;
The emitter of the 2nd IGBT S2 connects the collector electrode of the 3rd IGBT S3;
The emitter of the 3rd IGBT S3 connects the collector electrode of the 4th IGBT S4 and the anode of the second clamp diode D2 respectively;
The emitter of the 4th IGBT S4 connects direct current negative wire DC-;
The anode of the first clamp diode D1 connects negative electrode and the direct current center line DC0 of the second clamp diode D2 respectively.
See also Fig. 2, Fig. 3 and Fig. 4, three-level current transformer of the present utility model, at each single-phase tri-level circuit 200:
The first to fourth IGBT S1-S4 and first to the second clamp diode D1-D2 all are fixed on a surface that includes the water-cooling base plate 1 of water channel 10;
With the first and second IGBT S1, S2 be row, the third and fourth IGBT S3, S4 are the form at row, the first and the 3rd IGBT S1, S3 diagonal angle and the second and the 4th IGBT S2, S4 diagonal angle, first to fourth IGBT S1-S4 are individually fixed in four jiaos of water-cooling base plate 1;
The first and second clamp diode D1, D2 are row and are fixed in the middle part of water-cooling base plate 1, and the first and second clamp diode D1, D2 negative electrode separately rely on the first and second IGBT S1, S2 place side, and anode separately relies on the third and fourth IGBT S3, S4 place side;
Such layout makes that the line between the power device (S1-S4 and D1-D2) is simple, symmetrical, and current circuit is little, lowers the stray inductance in change of current loop, reduces power device (S1-S4 and D1-D2) causes damage because of the shutoff overvoltage possibility.
First to fourth IGBT S1-S4 all with collector electrode in the inboard, emitter is arranged in the mode in the outside, and first to fourth IGBT S1-S4 driving Dp separately is installed in the side of each self-electrode, thereby is not covered by stack bus bar, makes things convenient for Installation and Debugging and maintenance.
See also Fig. 3, be the structure chart of water channel 10; Water channel 10 is built in the inside of water-cooling base plate 1, comprises vertical inlet channel 101, top cross water channel 102, bottom transverse water channel 103 and three vertical cooling water channels 104,105,106, wherein:
Three vertical cooling water channels 104,105,106 are connected top cross water channel 102 and bottom transverse water channel 103 parallel with one anotherly, and lay respectively at the below of the first and second IGBT S1, S2 column, the first and second clamp diode D1, D2 column and the third and fourth IGBT S3, S4 column;
The right output port of bottom transverse water channel 103 picks out the mouth of a river 12;
Cooling water is entered by the water inlet 11 of lower-left end, flow into the top of water-cooling base plate 1 through vertical inlet channel 101, thereby effectively remove bubble, improve radiating effect, flow into top cross water channel 102 then, three the vertical cooling water channels 104,105,106 of then flowing through from top to bottom meet at bottom transverse water channel 103 at last, flow out through the delivery port 12 of bottom righthand side.Because the first and the 4th IGBT S1, the switching frequency of S4 is than the second and the 3rd IGBTS2, the switching frequency height of S3, so caloric value also is the second and the 3rd IGBT S2, the 3-4 of S3 doubly, cooling water will be from the first and the 4th IGBT S1, S4 takes out of than the second and the 3rd IGBT S2, the heat that S3 is higher, the first and second clamp diode D1, D2 is owing to have bigger loss in reversely restoring process, its caloric value and the second and the 3rd IGBT S2, S3 is suitable, so with the first and the 4th IGBT S1, S4 is arranged in the upper left corner and the upper right corner of water-cooling base plate 1 respectively, make cooling water flow through the first and the 4th IGBT S1 earlier, the below of S4, because its water temperature is lower, radiating effect is stronger relatively, guarantees the uniformity of dispelling the heat with this.
See also Fig. 2, be first specific embodiment of the present utility model, wherein, an IGBT S1 is positioned at the upper right corner of water-cooling base plate 1; The 2nd IGBT S2 is positioned at the lower right corner of water-cooling base plate 1; The 3rd IGBT S3 is positioned at the lower left corner of water-cooling base plate 1; The 4th IGBT S4 is positioned at the upper left corner of water-cooling base plate 1; The first clamp diode D1 is positioned at the below, middle part of water-cooling base plate 1; The second clamp diode D2 is positioned at the top, middle part of water-cooling base plate 1; Therefore, the vertical cooling water channel 104 in left side is used to cool off the third and fourth IGBT S3, S4; Middle vertical cooling water channel 105 is used to cool off the first and second clamp diode D1, D2; The vertical cooling water channel 106 on right side is used to cool off the first and second IGBT S1, S2, flow through the earlier below of the first and the 4th IGBT S1, S4 of cooling water, and heat radiation is evenly;
And the mounting means of the first and second IGBT S1, S2 is left side collector electrode, right side emitter; The mounting means of the third and fourth IGBT S3, S4 is left side emitter, right side collector electrode; The mounting means of the first and second clamp diode D1, D2 is left side anode, right side negative electrode; First to fourth IGBT S1-S4 driving Dp separately is installed in the side of each self-electrode, is not covered by stack bus bar; Their line has reduced change of current loop as shown in Figure 2 substantially; Simultaneously, from the below of water-cooling base plate 1, exchange lead-out wire AC and draw from the connecting line of the second and the 3rd IGBT S2, S3; Top from water-cooling base plate 1, draw direct current main track DC+ from the collector electrode of an IGBT S1, draw direct current negative wire DC-from the emitter of the 4th IGBT S4, draw direct current center line DC from the connecting line of the first and second clamp diode D1, D2, thereby conveniently, be beneficial to the expansion of system with other parallel connections mutually.
See also Fig. 4, be second specific embodiment of the present utility model, wherein, an IGBT S1 is positioned at the lower left corner of water-cooling base plate 1; The 2nd IGBT S2 is positioned at the upper left corner of water-cooling base plate 1; The 3rd IGBT S3 is positioned at the upper right corner of water-cooling base plate 1; The 4th IGBT S4 is positioned at the lower right corner of water-cooling base plate 1; The first clamp diode D1 is positioned at the top, middle part of water-cooling base plate 1; The second clamp diode D2 is positioned at the below, middle part of water-cooling base plate 1; Therefore, the vertical cooling water channel 104 in left side is used to cool off the first and second IGBT S1, S2; Middle vertical cooling water channel 105 is used to cool off the first and second clamp diode D1, D2; The vertical cooling water channel 106 on right side is used to cool off the third and fourth IGBT S3, S4, and flow through the earlier below of the second and the 3rd IGBT S2, S3 of cooling water, and radiating effect is more embodiment illustrated in fig. 3 weaker;
And the mounting means of the first and second IGBT S1, S2 is left side emitter, right side collector electrode; The mounting means of the third and fourth IGBT S3, S4 is left side collector electrode, right side emitter; The mounting means of the first and second clamp diode D1, D2 is left side negative electrode, right side anode; First to fourth IGBT S1-S4 driving Dp separately is installed in the side of each self-electrode, is not covered by stack bus bar; Their line has reduced change of current loop as shown in Figure 4 substantially; Simultaneously, from the top of water-cooling base plate 1, exchange lead-out wire AC and draw from the connecting line of the second and the 3rd IGBT S2, S3; Below from water-cooling base plate 1, draw direct current main track DC+ from the collector electrode of an IGBT S1, draw direct current negative wire DC-from the emitter of the 4th IGBT S4, draw direct current center line DC from the connecting line of the first and second clamp diode D1, D2, thereby conveniently, be beneficial to the expansion of system with other parallel connections mutually.
Claims (9)
1. the modular construction of a three-level current transformer, described three-level current transformer comprises the single-phase tri-level circuit of three parallel connections, each single-phase tri-level circuit comprises an IGBT to the four IGBT, first clamp diode and second clamp diode, wherein, the emitter of an IGBT connects the collector electrode of the 2nd IGBT and the negative electrode of first clamp diode respectively; The emitter of the 2nd IGBT connects the collector electrode of the 3rd IGBT; The emitter of the 3rd IGBT connects the collector electrode of the 4th IGBT and the anode of second clamp diode respectively; The anode of first clamp diode connects the negative electrode of second clamp diode;
It is characterized in that, at each single-phase tri-level circuit:
A described IGBT to the four IGBT, first clamp diode and second clamp diode all are fixed on a surface that includes the water-cooling base plate of water channel;
A described IGBT to the four IGBT are individually fixed in four jiaos of described water-cooling base plate, and are the form setting at row, an IGBT and the 4th IGBT diagonal angle with an IGBT and the 2nd IGBT;
Described first clamp diode and second clamp diode are row and are fixed in the middle part of described water-cooling base plate, and the negative electrode of the negative electrode of first clamp diode and second clamp diode is correspondingly facing to an IGBT and the 2nd IGBT place side.
2. the modular construction of three-level current transformer according to claim 1 is characterized in that, a described IGBT to the four IGBT all with collector electrode in the inboard, emitter is arranged in the mode in the outside.
3. the modular construction of three-level current transformer according to claim 2 is characterized in that, a described IGBT to the four IGBT drive installation separately is at the side of each self-electrode.
4. according to the modular construction of claim 1 or 2 or 3 described three-level current transformers, it is characterized in that, the described water channel that is built in water-cooling base plate inside comprises vertical inlet channel, top cross water channel, bottom transverse water channel and three vertical cooling water channels, wherein:
Described vertical inlet channel is positioned at the left side of described water-cooling base plate, and its lower port connects a water inlet, and its upper port is connected described top cross water channel;
Described three vertical cooling water channels are connected described top cross water channel and bottom transverse water channel respectively, and one by one corresponding to a described IGBT and the 2nd IGBT column, first clamp diode and the second clamp diode column and the 3rd IGBT and the 4th IGBT column;
The right output port of described bottom transverse water channel connects a delivery port.
5. the modular construction of three-level current transformer according to claim 4 is characterized in that, a described IGBT is positioned at the upper left corner or the upper right corner of described water-cooling base plate.
6. the modular construction of three-level current transformer according to claim 5 is characterized in that, a described IGBT is positioned at the upper right corner of described water-cooling base plate; Described the 2nd IGBT is positioned at the lower right corner of described water-cooling base plate; Described the 3rd IGBT is positioned at the lower left corner of described water-cooling base plate; Described the 4th IGBT is positioned at the upper left corner of described water-cooling base plate; Described first clamp diode is positioned at the below, middle part of described water-cooling base plate; Described second clamp diode is positioned at the top, middle part of described water-cooling base plate.
7. the modular construction of three-level current transformer according to claim 6 is characterized in that,
From the below of described water-cooling base plate, draw with the connecting line of the 3rd IGBT from the 2nd IGBT and to exchange lead-out wire;
From the top of described water-cooling base plate, draw the direct current main track from the collector electrode of an IGBT, draw the direct current negative wire from the emitter of the 4th IGBT, draw the direct current center line from the connecting line of first clamp diode and second clamp diode.
8. the modular construction of three-level current transformer according to claim 4 is characterized in that, a described IGBT is positioned at the lower left corner of described water-cooling base plate; The 2nd IGBT is positioned at the upper left corner of described water-cooling base plate; The 3rd IGBT is positioned at the upper right corner of described water-cooling base plate; The 4th IGBT is positioned at the lower right corner of described water-cooling base plate; First clamp diode is positioned at the top, middle part of described water-cooling base plate; Second clamp diode is positioned at the below, middle part of described water-cooling base plate.
9. the modular construction of three-level current transformer according to claim 8 is characterized in that,
From the top of described water-cooling base plate, draw with the connecting line of the 3rd IGBT from second and to exchange lead-out wire;
From the below of described water-cooling base plate, draw the direct current main track from the collector electrode of an IGBT, draw the direct current negative wire from the emitter of the 4th IGBT, draw the direct current center line from the connecting line of first clamp diode and second clamp diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320047282 CN203104253U (en) | 2013-01-29 | 2013-01-29 | Modularized structure for three-electric level current transformer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320047282 CN203104253U (en) | 2013-01-29 | 2013-01-29 | Modularized structure for three-electric level current transformer |
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| CN203104253U true CN203104253U (en) | 2013-07-31 |
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| CN 201320047282 Expired - Lifetime CN203104253U (en) | 2013-01-29 | 2013-01-29 | Modularized structure for three-electric level current transformer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105355611A (en) * | 2015-09-29 | 2016-02-24 | 特变电工新疆新能源股份有限公司 | High-capacity water-cooling power unit |
| CN105634293A (en) * | 2016-02-02 | 2016-06-01 | 浙江海得新能源有限公司 | Diode-clamped three-level converter and power system therefor |
| US9685883B2 (en) | 2014-05-23 | 2017-06-20 | Delta Electronics (Shanghai) Co., Ltd. | Three-level rectifier |
| CN118074480A (en) * | 2024-03-04 | 2024-05-24 | 华中科技大学 | Novel packaging power module |
-
2013
- 2013-01-29 CN CN 201320047282 patent/CN203104253U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9685883B2 (en) | 2014-05-23 | 2017-06-20 | Delta Electronics (Shanghai) Co., Ltd. | Three-level rectifier |
| CN105355611A (en) * | 2015-09-29 | 2016-02-24 | 特变电工新疆新能源股份有限公司 | High-capacity water-cooling power unit |
| CN105634293A (en) * | 2016-02-02 | 2016-06-01 | 浙江海得新能源有限公司 | Diode-clamped three-level converter and power system therefor |
| CN118074480A (en) * | 2024-03-04 | 2024-05-24 | 华中科技大学 | Novel packaging power module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: SHANGHAI ELECTRIC POWER ELECTRONICS CO.,LTD. Assignor: Shanghai Electric Group Co.,Ltd. Contract record no.: 2014310000107 Denomination of utility model: Modularized structure of three-level converter Granted publication date: 20130731 License type: Exclusive License Record date: 20140618 |
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| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130731 |