CN202957976U - Micro electro mechanical microphone chip - Google Patents
Micro electro mechanical microphone chip Download PDFInfo
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- CN202957976U CN202957976U CN 201220603900 CN201220603900U CN202957976U CN 202957976 U CN202957976 U CN 202957976U CN 201220603900 CN201220603900 CN 201220603900 CN 201220603900 U CN201220603900 U CN 201220603900U CN 202957976 U CN202957976 U CN 202957976U
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- vibrating diaphragm
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- conductive layer
- microphone chip
- insulating barrier
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- 239000002184 metal Substances 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
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Abstract
The utility model discloses a micro electro mechanical microphone chip. A blocking layer is arranged on the upper surface of a base; a supporting layer is arranged on the blocking layer; a back electrode plate is arranged on the supporting layer; a penetrating hole is formed in the center of the base, the blocking layer and the supporting layer as a back chamber; the back electrode plate comprises an insulating layer and a conductive layer, the insulating layer is arranged on the upper portion, and the conductive layer is arranged on the lower portion. The conductive layer is divided into two parts, wherein one part which is arranged under the insulating layer is divided from the middle in the back chamber to form into a cantilever; a vibrating diaphragm is arranged on the cantilever in a suspending mode; a rivet is arranged at a position which is corresponding to the cantilever under the vibrating diaphragm; and the other part is arranged at a position which is corresponding to a vibration area of the vibrating diaphragm and positions which are corresponding to a first metal electrode and a second metal electrode under the insulating layer. The micro electro mechanical microphone chip has the advantages of being capable of solving the problems that stress of the vibrating diaphragm cannot release to the greatest extent, the sensitivity is low, and the technology is complicated and enhancing the intensity of vibration resistance and drop of the vibrating diaphragm which is arranged in a suspending mode.
Description
Technical field
The utility model relates to the mike technique field, particularly a kind of electromechanical microphone chip.
Background technology
MEMS (micro electro mechanical system) (MEMS, Micro-Electro-Mechanical Systems), be called again micromechanics or micro-system, but refer to batch making, integrate micro mechanism, microsensor, miniature actuator and signal processing with control circuit until interface, communicate by letter and microdevice or the system of power supply etc.
Microphone, be called again microphone, is voice signal to be converted to the energy conversion device of the signal of telecommunication.
At present, along with the high performance requirements of the portable type electronic products such as mobile phone, notebook computer, as more strict as the performance requirement of the parts such as microphone (microphone) to the electronic devices and components of electronic product inside.And the electromechanical microphone chip is widely applied because of its high performance characteristics.
In the electromechanical microphone chip of traditional structure, be generally growth vibrating diaphragm on directly on barrier layer, (being called again insulating barrier), the vibrating diaphragm periphery is fixing.This structure stress of vibrating diaphragm in limited oscillation space is difficult to farthest be discharged, and the compliance of vibrating diaphragm is poor, and sensitivity is low, and for vibrating diaphragm under, backplane is in upper structure, needs to make special electrode and connects vibrating diaphragm, complex process.
The utility model content
The utility model provides a kind of electromechanical microphone chip, with the stress that solves above-mentioned vibrating diaphragm, can not at utmost discharge, and sensitivity is low, the problem of complex process.
In order to achieve the above object, the technical solution of the utility model is achieved in that
The utility model discloses a kind of electromechanical microphone chip, comprising: substrate, barrier layer, supporting layer, back pole plate, vibrating diaphragm, rivet, the first metal electrode and the second metal electrode;
Wherein, upper surface of substrate is barrier layer, on barrier layer, is supporting layer, on supporting layer, is back pole plate;
There is a through hole at the center of substrate, barrier layer and supporting layer, is back of the body chamber;
Back pole plate consists of insulating barrier and conductive layer, and insulating barrier is upper, conductive layer under; Wherein conductive layer is divided into two parts, a conductive layer part is minute formation cantilever under insulating barrier and in back of the body chamber, vibrating diaphragm is hung on this cantilever, rivet is arranged under vibrating diaphragm the position corresponding to cantilever, another part of conductive layer arrange under insulating barrier with the corresponding position of vibrating diaphragm vibration area and with the first metal electrode and position corresponding to the second metal electrode;
Top electrode hole and the bottom electrode hole of vertically opening are downwards arranged on the insulating barrier of back pole plate; The top electrode hole penetrates insulating barrier, and the first metal electrode is arranged in the top electrode hole and directly contacts with conductive layer; The bottom electrode hole penetrates insulating barrier, and the second metal electrode is arranged in the bottom electrode hole and directly contacts with conductive layer.
Alternatively, described substrate is silicon nitride.
Alternatively, described barrier layer is silicon oxide film, or the composite membrane of polysilicon and silicon nitride.
Alternatively, described vibrating diaphragm is polysilicon film.
Alternatively, described rivet is silicon nitride.
Alternatively, described supporting layer is silica.
Alternatively, the position that the middle part of described back pole plate is corresponding with vibrating diaphragm, be provided with a plurality of sound hole.
Alternatively, the conductive layer of described back pole plate is polysilicon;
The insulating barrier of described back pole plate is silicon nitride.
Alternatively, the part of conductive layer is minute 4 cantilevers of formation under insulating barrier and in back of the body chamber, and vibrating diaphragm is hung on these 4 cantilevers.
From above-mentioned, this electromechanical microphone chip that comprises substrate, barrier layer, supporting layer, back pole plate, vibrating diaphragm, the first metal electrode and the second metal electrode of the present utility model, upper surface of substrate is barrier layer, it on barrier layer, is supporting layer, it on supporting layer, is back pole plate, back pole plate consists of insulating barrier and conductive layer, and insulating barrier is upper, conductive layer under; Wherein conductive layer is divided into two parts, a part is minute formation cantilever under insulating barrier and in back of the body chamber, vibrating diaphragm is hung on this cantilever, rivet is arranged under vibrating diaphragm the position corresponding to cantilever, another part of conductive layer arranges under insulating barrier and the technical scheme corresponding position of vibrating diaphragm vibration area, because vibrating diaphragm is suspended on the cantilever that the conductive layer of back pole plate forms, therefore the stress of vibrating diaphragm can access maximum release, the compliance of vibrating diaphragm is stronger, sensitivity improves, circuit design is simple simultaneously, has simplified production technology.And, because vibrating diaphragm is arranged with the structure of rivet, what strengthened the outstanding vibrating diaphragm of establishing hangs intensity and the shatter-proof intensity of falling.
The accompanying drawing explanation
Fig. 1 is the schematic top plan view that the conductive layer of a kind of electromechanical microphone chip in the utility model embodiment distributes;
Fig. 2 is a kind of electromechanical microphone chip in the utility model embodiment profile along CD dotted line in Fig. 1;
Fig. 3 is a kind of electromechanical microphone chip in the utility model embodiment profile along AB dotted line in Fig. 1;
Fig. 4 A is the first exemplary plot of the manufacturing process of the electromechanical microphone chip in the utility model embodiment;
Fig. 4 B is the second exemplary plot of the manufacturing process of the electromechanical microphone chip in the utility model embodiment;
Fig. 4 C is the 3rd exemplary plot of the manufacturing process of the electromechanical microphone chip in the utility model embodiment;
Fig. 4 D is the 4th exemplary plot of the manufacturing process of the electromechanical microphone chip in the utility model embodiment;
Fig. 4 E is the 5th exemplary plot of the manufacturing process of the electromechanical microphone chip in the utility model embodiment.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing, the utility model execution mode is described in further detail.
Fig. 1 is the schematic top plan view that the conductive layer of a kind of electromechanical microphone chip in the utility model embodiment distributes.Fig. 2 is a kind of electromechanical microphone chip in the utility model embodiment profile along CD dotted line in Fig. 1.Fig. 3 is a kind of electromechanical microphone chip in the utility model embodiment profile along AB dotted line in Fig. 1.
Referring to Fig. 1-3, the electromechanical microphone chip in the utility model embodiment comprises: substrate 1, barrier layer 2, supporting layer 3, back pole plate, vibrating diaphragm 6, rivet 13, the first metal electrode 7 and the second metal electrode 8; Back pole plate consists of insulating barrier 4 and conductive layer 5, and insulating barrier 4 is upper, conductive layer 5 under.Wherein, substrate 1 upper surface is barrier layer 2, on barrier layer 2, is supporting layer 3, on supporting layer 3, is back pole plate.There is a through hole at the center of substrate 1, barrier layer 2 and supporting layer 3, is back of the body chamber 9.Conductive layer 5 is divided into two parts: a part is divided and is formed cantilever insulating barrier 4 times and in back of the body chamber 9, vibrating diaphragm 6 is hung on this cantilever, rivet 13 is arranged on 6 times positions corresponding to cantilever of vibrating diaphragm, conductive layer 5 divides and forms four cantilevers insulating barrier 4 times and in back of the body chamber in the present embodiment as seen from Figure 1, vibrating diaphragm 6 is hung on these four cantilevers, and wherein the position of corresponding two cantilevers (on the CD line) is provided with rivet as can be seen from Figures 2 and 3.Another part of conductive layer 5 be arranged under insulating barrier 4 with the vibrating diaphragm 6 corresponding positions of vibration area and with the first metal electrode 7 and position corresponding to the second metal electrode 8.The conductive layer 5 that oblique line in Fig. 1 partly means.Can find out, the first metal electrode 7 is electrically connected to vibrating diaphragm 6 by a cantilever, and the conductive layer 5 that the second metal electrode 8 is corresponding with the vibrating diaphragm vibration area is electrically connected to.
Referring to Fig. 2 and 3, top electrode hole 10 and the bottom electrode hole 11 of vertically opening are arranged downwards on the insulating barrier 4 of back pole plate; Top electrode 10 holes penetrate insulating barrier 4, the first metal electrodes 7 and are arranged in top electrode hole 10 and directly contact with conductive layer; Bottom electrode hole 11 penetrates insulating barrier 4, the second metal electrodes 8 and is arranged in bottom electrode hole 11 and directly contacts with conductive layer.The position that the middle part of back pole plate is corresponding with vibrating diaphragm 6, be provided with a plurality of sound hole 12.
Visible, in the electromechanical microphone chip in the present embodiment, be to have formed backplane upper, vibrating diaphragm under capacitance structure, and vibrating diaphragm is hung on back pole plate.Because vibrating diaphragm is suspended on the cantilever that the conductive layer of back pole plate forms, so the stress of vibrating diaphragm can access maximum release, and the compliance of vibrating diaphragm is stronger, and sensitivity improves, and circuit design is simple simultaneously, has simplified production technology.And, because vibrating diaphragm is arranged with the structure of rivet, what strengthened the outstanding vibrating diaphragm of establishing hangs intensity and the shatter-proof intensity of falling.
In an embodiment of the present utility model: substrate 1 can adopt silicon nitride.It is silicon oxide film that barrier layer 2 can adopt, or can to adopt be the composite membrane of polysilicon and silicon nitride on barrier layer 2.Vibrating diaphragm 6 can adopt polysilicon film.Rivet 13 adopts silicon nitride.Supporting layer 3 adopts insulating material, for example can adopt silica.The conductive layer 5 of back pole plate can adopt polysilicon, and insulating barrier 4 can adopt silicon nitride.
Fig. 4 A is the first exemplary plot of the manufacturing process of the electromechanical microphone chip in the utility model embodiment; Fig. 4 B is the second exemplary plot of the manufacturing process of the electromechanical microphone chip in the utility model embodiment; Fig. 4 C is the 3rd exemplary plot of the manufacturing process of the electromechanical microphone chip in the utility model embodiment; Fig. 4 D is the 4th exemplary plot of the manufacturing process of the electromechanical microphone chip in the utility model embodiment; Fig. 4 E is the 5th exemplary plot of the manufacturing process of the electromechanical microphone chip in the utility model embodiment.
In the utility model embodiment, the manufacturing process of electromechanical microphone chip mainly comprises:
Referring to Fig. 4 A, at first in substrate 1, growth forms barrier layer 2;
Referring to Fig. 4 B, generate the rivet 13 of pre-set dimension on barrier layer 2, at the assigned address of rivet 13, hole is set;
Referring to Fig. 4 C and Fig. 4 D, generate successively vibrating diaphragm 6 and supporting layer 3 on barrier layer 2, the position corresponding at the hole with on rivet 13 of vibrating diaphragm 6 and supporting layer 3 arranges hole, then on supporting layer 3, generates the conductive layer 5(polysilicon layer of back pole plate), and fill up hole;
Referring to Fig. 4 E, generate the insulating barrier 4(silicon nitride layer of back pole plate on conductive layer 5), and two electrode installation positions are set on insulating barrier 4, go up motor hole and bottom electrode hole, an electrode respectively is installed in top electrode hole and bottom electrode hole;
Then corrosion forms cavity and just can obtain the electromechanical microphone chip shown in Fig. 1 to 3.
In sum, this electromechanical microphone chip that comprises substrate, barrier layer, supporting layer, back pole plate, vibrating diaphragm, the first metal electrode and the second metal electrode of the present utility model, upper surface of substrate is barrier layer, it on barrier layer, is supporting layer, it on supporting layer, is back pole plate, back pole plate consists of insulating barrier and conductive layer, and insulating barrier is upper, conductive layer under; Wherein conductive layer is divided into two parts, a part is minute formation cantilever under insulating barrier and in back of the body chamber, vibrating diaphragm is hung on this cantilever, rivet is arranged under vibrating diaphragm the position corresponding to cantilever, another part of conductive layer arranges under insulating barrier and the technical scheme corresponding position of vibrating diaphragm vibration area, because vibrating diaphragm is suspended on the cantilever that the conductive layer of back pole plate forms, therefore the stress of vibrating diaphragm can access maximum release, the compliance of vibrating diaphragm is stronger, sensitivity improves, circuit design is simple simultaneously, has simplified production technology.And, because vibrating diaphragm is arranged with the structure of rivet, what strengthened the outstanding vibrating diaphragm of establishing hangs intensity and the shatter-proof intensity of falling.
The foregoing is only preferred embodiment of the present utility model, be not intended to limit protection range of the present utility model.All any modifications of doing, be equal to replacement, improvement etc. within spirit of the present utility model and principle, all be included in protection range of the present utility model.
Claims (9)
1. an electromechanical microphone chip, is characterized in that, comprising: substrate, barrier layer, supporting layer, back pole plate, vibrating diaphragm, rivet, the first metal electrode and the second metal electrode;
Wherein, upper surface of substrate is barrier layer, on barrier layer, is supporting layer, on supporting layer, is back pole plate;
There is a through hole at the center of substrate, barrier layer and supporting layer, is back of the body chamber;
Back pole plate consists of insulating barrier and conductive layer, and insulating barrier is upper, conductive layer under; Wherein conductive layer is divided into two parts, the part of conductive layer is minute formation cantilever under insulating barrier and in back of the body chamber, vibrating diaphragm is hung on this cantilever, rivet is arranged under vibrating diaphragm the position corresponding to cantilever, another part of conductive layer arrange under insulating barrier with the corresponding position of vibrating diaphragm vibration area and with the first metal electrode and position corresponding to the second metal electrode;
Top electrode hole and the bottom electrode hole of vertically opening are downwards arranged on the insulating barrier of back pole plate; The top electrode hole penetrates insulating barrier, and the first metal electrode is arranged in the top electrode hole and directly contacts with conductive layer; The bottom electrode hole penetrates insulating barrier, and the second metal electrode is arranged in the bottom electrode hole and directly contacts with conductive layer.
2. electromechanical microphone chip as claimed in claim 1, is characterized in that,
Described substrate is silicon nitride.
3. electromechanical microphone chip as claimed in claim 1, is characterized in that,
Described barrier layer is silicon oxide film, or the composite membrane of polysilicon and silicon nitride.
4. electromechanical microphone chip as claimed in claim 1, is characterized in that,
Described vibrating diaphragm is polysilicon film.
5. electromechanical microphone chip as claimed in claim 1, is characterized in that,
Described rivet is silicon nitride.
6. electromechanical microphone chip as claimed in claim 5, is characterized in that,
Described supporting layer is silica.
7. electromechanical microphone chip as claimed in claim 1, is characterized in that,
The position that the middle part of described back pole plate is corresponding with vibrating diaphragm, be provided with a plurality of sound hole.
8. electromechanical microphone chip as claimed in claim 1, is characterized in that,
The conductive layer of described back pole plate is polysilicon;
The insulating barrier of described back pole plate is silicon nitride.
9. electromechanical microphone chip as claimed in claim 1, is characterized in that,
The part of conductive layer is minute 4 cantilevers of formation under insulating barrier and in back of the body chamber, and vibrating diaphragm is hung on these 4 cantilevers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220603900 CN202957976U (en) | 2012-11-15 | 2012-11-15 | Micro electro mechanical microphone chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220603900 CN202957976U (en) | 2012-11-15 | 2012-11-15 | Micro electro mechanical microphone chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202957976U true CN202957976U (en) | 2013-05-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220603900 Expired - Lifetime CN202957976U (en) | 2012-11-15 | 2012-11-15 | Micro electro mechanical microphone chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN202957976U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015196468A1 (en) * | 2014-06-27 | 2015-12-30 | Goertek Inc. | Silicon microphone with suspended diaphragm and system with the same |
| CN105338458A (en) * | 2014-08-01 | 2016-02-17 | 无锡华润上华半导体有限公司 | Mems microphone |
| CN115209328A (en) * | 2022-07-05 | 2022-10-18 | 瑶芯微电子科技(上海)有限公司 | MEMS microphone |
-
2012
- 2012-11-15 CN CN 201220603900 patent/CN202957976U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015196468A1 (en) * | 2014-06-27 | 2015-12-30 | Goertek Inc. | Silicon microphone with suspended diaphragm and system with the same |
| CN105359553A (en) * | 2014-06-27 | 2016-02-24 | 歌尔声学股份有限公司 | Silicon microphone with suspended diaphragm and system with the same |
| US10158951B2 (en) | 2014-06-27 | 2018-12-18 | Goertek Inc. | Silicon microphone with suspended diaphragm and system with the same |
| CN105338458A (en) * | 2014-08-01 | 2016-02-17 | 无锡华润上华半导体有限公司 | Mems microphone |
| CN105338458B (en) * | 2014-08-01 | 2019-06-07 | 无锡华润上华科技有限公司 | MEMS microphone |
| CN115209328A (en) * | 2022-07-05 | 2022-10-18 | 瑶芯微电子科技(上海)有限公司 | MEMS microphone |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200612 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130529 |