CN202931664U - Double-faced aluminium circuit board with ultrahigh heat conductivity - Google Patents
Double-faced aluminium circuit board with ultrahigh heat conductivity Download PDFInfo
- Publication number
- CN202931664U CN202931664U CN 201220328909 CN201220328909U CN202931664U CN 202931664 U CN202931664 U CN 202931664U CN 201220328909 CN201220328909 CN 201220328909 CN 201220328909 U CN201220328909 U CN 201220328909U CN 202931664 U CN202931664 U CN 202931664U
- Authority
- CN
- China
- Prior art keywords
- coating
- super
- conductive
- wiring board
- aluminum wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 61
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 61
- 239000004411 aluminium Substances 0.000 title claims abstract description 39
- 239000011248 coating agent Substances 0.000 claims abstract description 114
- 238000000576 coating method Methods 0.000 claims abstract description 114
- 239000010949 copper Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 33
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 35
- 239000002131 composite material Substances 0.000 claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 22
- 238000005516 engineering process Methods 0.000 abstract description 12
- 238000009413 insulation Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 230000032683 aging Effects 0.000 abstract description 2
- 239000002861 polymer material Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 238000005240 physical vapour deposition Methods 0.000 description 27
- 230000008021 deposition Effects 0.000 description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000001771 vacuum deposition Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 229910052804 chromium Inorganic materials 0.000 description 9
- 238000010884 ion-beam technique Methods 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000008719 thickening Effects 0.000 description 6
- 238000011049 filling Methods 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 238000004062 sedimentation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002203 pretreatment Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- XEEVLJKYYUVTRC-UHFFFAOYSA-N oxomalonic acid Chemical compound OC(=O)C(=O)C(O)=O XEEVLJKYYUVTRC-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009504 vacuum film coating Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
The utility model provides a double-faced aluminium circuit board with ultrahigh heat conductivity. The circuit board comprises an aluminium sheet, a conductive hole which is arranged on the aluminium sheet and is used for communicating upper and lower surfaces of the aluminium sheet, an alumina layer which is subjected to oxidation treatment and is coated on the upper and lower surfaces of the aluminium sheet and hole wall of the conductive hole for insulation and heat conduction, a DLC coating adhered to the surface of the alumina layer, and a metal Cu coating. The double-faced aluminium circuit board has excellent comprehensive heat-conducting property, and its surface insulated heat conduction layer contains no high polymer material and has excellent flame retardation and ageing resistance. In addition, the surface insulated layer and the hole-wall surface insulated layer of the conductive hole are a whole insulated heat-conduction body having the same material and integrated structure; porefilling and chemical copper deposition methods are not required; the technology is simple; and the rate of finished product is high.
Description
Technical field
The utility model relates to a kind of double-side aluminum wiring board with super-high heat-conductive performance, belongs to electronic technology field.
Background technology
Current double-face aluminium substrate technique also just is in theory stage, rarely really can realize the product successful Application of double-side aluminum wiring board processing technology, and theoretic double-face aluminium substrate is because of the inreal purpose that realizes the double-face aluminium substrate design of heat conducting limitation.
The critical process of theoretic traditional double-face aluminium substrate production is that consent is processed, thereby reaches the purpose of insulation.That is: the PCB(Chinese is printed circuit board, is the printed circuit board that adopts electron printing to make) conductive hole that finished product requires, need once boring, insulating material filling perforation, at last secondary drilling on the filling perforation material.Present filling perforation material very easily produces defective, and the metal level the when short circuit that causes such as the filling perforation cavity, thermal shock is peeled off etc., and complex process.
Although the double-side aluminum wiring board capacity of heat transmission of tradition process for pressing production slightly is better than FR-4 copper-clad plate (in the epoxy resin copper-clad plate a kind of), because the medium factor does not reach the semi-conductive encapsulation requirement of high-power heating yet.
The utility model content
The purpose of this utility model is to solve above-mentioned technical problem, a kind of double-side aluminum wiring board with super-high heat-conductive performance is provided, being applied in high power LED device or module etc. needs the field of super-high heat-conductive, improves the heat conduction and heat radiation ability of substrate when satisfying the electrical apparatus insulation requirement.
The purpose of this utility model is achieved through the following technical solutions:
A kind of super-high heat-conductive double-side aluminum wiring board, the conductive hole that comprises aluminium base sheet material, will described aluminium base sheet material upper and lower surface be connected in aluminium base sheet material being used for of offering, and the alumina layer that is used for insulating heat-conductive processed by method for oxidation of described aluminium base sheet material upper and lower surface and described conductive hole hole wall and the PVD composite coating that is attached to according to the order of sequence described alumina layer surface and the Cu coating that is used for making the conducting wire by the preparation of PVD method, described PVD composite coating comprises the DLC coating for insulating heat-conductive by the preparation of PVD method at least.
Preferably, described PVD composite coating also comprises a Si coating, the 2nd Si coating that plays a transition role, and the coating structure of described PVD composite coating sequentially is: Si coating-DLC coating-the 2nd Si coating.
Preferably, in order to play transitional function, also be provided with one the 3rd tie coat between described PVD composite coating and the Cu coating.Described the 3rd tie coat can be in Ti coating or Cr coating or the Ni coating any one.
Preferably, the thickness of a described Si coating is 100nm-500nm; The thickness of described DLC coating is 0.5um-5um; The thickness of described the 2nd Si coating is 100nm-500nm; The thickness of described the 3rd tie coat is 100nm-500nm; The thickness of described circuit Cu coating is 5um.
Preferably, in order to reach conduction or the requirement of other process aspects, the surface of described Cu coating also is provided with by what electro-plating method prepared and adds thick copper layer.
Preferably, described Cu coating is provided with anti-welding and solder mask protective effect, or/and the surface-treated layer that shields.When super-high heat-conductive double-side aluminum wiring board comprises when adding thick copper layer, the described thick copper layer that adds is provided with anti-welding and solder mask protective effect, or/and the surface-treated layer that shields.
The beneficial effects of the utility model are mainly reflected in:
(1) aluminum-based circuit board surface insulation heat-conducting layer is mainly alumina layer and DLC coating, not pbz polymer material, fire resistance and ageing resistace excellence.
(2) the aluminum-based circuit board surface insulation layer is that contained material is identical, the insulating thermal conductor of structure one whole with the hole wall surface insulating barrier of conductive hole, be different from existing PCB processing technology, namely do not need the method for filling perforation and electroless copper plating, technique is simpler, and rate of finished products is high.
(3) compare with the double-side aluminum wiring board of traditional process for pressing production, the comprehensive heat conductivility of the utility model wiring board is excellent, and the copper coating of same cross-sectional has higher current capacity, and whole wiring board temperature diffusion evenly.
Description of drawings
Fig. 1 is the PVD composite coating structure schematic diagram of the utility model preferred embodiment.
Fig. 2 is the structural representation of the double-side aluminum wiring board of the utility model preferred embodiment.
Wherein:
| 11 | Aluminium |
12 | |
13 | The PVD |
| 14 | |
15 | Surface-treated |
16 | |
| 21 | Already oxidised aluminium |
22 | The one Si coating | 23 | The |
| 24 | The 2nd Si coating | 25 | The |
26 | The Cu coating |
Embodiment
Various coating technology developments are for industry manufacturing and daily life are brought many progress and facility.Rely on coating technology, can make product or parts obtain better surface property, thereby remedy some characteristic that material itself is not had.Diamond-like coating (Diamond-like Carbon), or abbreviation DLC coating is to contain diamond lattic structure (sp
3Key) and graphite-structure (sp
2Key) metastable amorphous substance.
In the coating technology, physical vapour deposition (PVD) refers to by processes such as evaporation, ionization or sputters, produces metallic and forms Compound deposition at surface of the work with the reacting gas reaction, is called for short PVD.PVD coating technique commonly used mainly is divided three classes at present, is vacuum evaporation coating membrane technology, vacuum sputtering coating technology and vacuum ionic bundle coating technique.Wherein, the vacuum magnetron sputtering coating film technology is to make during with the high-energy particle bombardment surface of solids particle of the surface of solids obtain energy and the surface of overflowing, and is deposited on the substrate.Vacuum ionic bundle coating technique refers to that the gas that is introduced into is ionized under the electromagnetic field acting in conjunction of ion beam under vacuum environment; Ionizable ion is accelerated under the electric field action between ion beam and the substrate, and with the bombardment of the form of high energy particle or be deposited on the substrate; The gas that is introduced into may be Ar, H according to the needs of technique
2Or C
2H
2Deng, thereby finish the techniques such as ion etching cleaning and ion beam depositing.But for the selection of different-energy and different preparation technologies, prepared product just can obtain different performances.
As shown in Figure 2, the utility model has disclosed a kind of preferred super-high heat-conductive double-side aluminum wiring board, the conductive hole 16 that comprises aluminium base sheet material 11, aluminium base sheet material 11 upper and lower surfaces are connected in aluminium base sheet material 11 being used for of offering, and the alumina layer 12 that is used for insulating heat-conductive and the PVD composite coating 13 that is attached to described alumina layer 12 surfaces processed by method for oxidation of aluminium base sheet material 11 upper and lower surfaces and conductive hole 16 hole walls, also has the 3rd tie coat 25 and Cu coating 26 on the PVD composite coating 13.
As shown in Figure 1, the PVD composite coating 13 that overlays on already oxidised aluminium base sheet material 21 surfaces comprises the DLC coating 23 that is used for insulating heat-conductive by PVD method plated film at least.
Certainly, in order to reach better transitional function, PVD composite coating 13 can also comprise a Si coating 22, the 2nd Si coating 24, and the coating structure of the PVD composite coating of present embodiment sequentially is: Si coating-DLC coating-the 2nd Si coating.
Be provided with on the surface of the utility model PVD composite coating 13 the 3rd tie coat 25 that plays a transition role, the Cu coating 26 that has reached electric action and or thickening Cu layer (not shown), any one of the 3rd tie coat 25 general employing Ti of present embodiment or Cr or Ni coating, its coating structure sequentially is: Ti or Cr or Ni coating-Cu coating-thickening Cu layer; Or Ti or Cr or Ni coating-Cu coating.
The below introduces the preparation method of metal base circuit board of the present utility model in detail:
Step 1, aluminium base sheet material cleans, and cleans aluminium base sheet material 11 with ultrasonic equipment, and oven dry;
Step 2 is bored conductive hole 16, according to the requirement of product design, step 1 is cleaned the aluminium base sheet material drill hole reason of finishing;
Step 3, the anodised aluminium substrate material is put into the 40g/L-100g/L sodium hydroxide solution alkaline etching 1min-3min of temperature 70 C with the aluminium base sheet material 11 after the step 2 boring, neutralizes with 10% nitric acid again; Then aluminium base sheet material 11 is put into temperature and carried out anodic oxidation 10 ℃-30 ℃ 10g/L-40g/L acid solution, described acid solution is the mixed solution of sulfuric acid and oxalic acid, and its mesoxalic acid solutes content is the 70%-100% of total soluble matters, and current density is 1A/dm
2-5A/dm
2, oxidation duration 30min-120min; Oxidation namely obtains alumina layer 12 with high-temperature water sealing of hole 10min-30min after finishing; Certainly, alumina layer 12 also can adopt differential arc oxidization technique to grow up to, and the thickness of alumina layer 12 is generally 14-60 μ m.
Step 4, the deposition step of PVD composite coating comprises PVD pre-treatment step and DLC deposition step, in order to improve the adhesion between the adjacent two layers, PVD composite coating deposition step can also comprise such as a Si coating and the 2nd Si deposition step, be specially:
⑴ PVD pre-treatment step will be sandwiched in the vacuum film coating chamber through the aluminium base sheet material 11 after the step 3 oxidation, regulates vacuum degree and is higher than 5.0 * 10
-4Pa, be 99.999% argon gas to the indoor purity that passes into of vacuum coating, flow 10-100sccm, and the indoor technique vacuum degree of maintenance vacuum coating is 0.1-5Pa, open the ion beam power supply, use ion beam that the argon gas of introducing is carried out ionization and bombards aluminium base sheet material 11, the voltage of ion beam is 1000-3000V, bombardment time 10-30 minute;
⑵ the one Si coating deposition, after described PVD pre-treatment step finishes, the indoor throughput 50-70sccm, purity of passing into is 99.999% argon gas to vacuum coating, and the indoor technique vacuum degree of maintenance vacuum coating is 0.1-5Pa, unlatching is with Si target shielding power supply, use the non-balance magnetically controlled sputter negative electrode to carrying out the Si plated film through the pretreated aluminium base sheet material 11 of PVD, applying direct voltage on the described non-balance magnetically controlled sputter negative electrode is 300-700V, sedimentation time is 5-20 minute, and the thickness of a Si coating 22 is 100-500nm;
⑶ DLC coating deposition, to the indoor throughput 300-500sccm that passes into of vacuum coating, purity is 98% acetylene gas, and the indoor technique vacuum degree of maintenance vacuum coating is 0.1-5Pa, open the ion beam power supply, use ion beam the aluminium base sheet material 11 through described Si coating deposition to be carried out the plated film of DLC, open the ion beam power supply, voltage control is at 800-2000V, and opens simultaneously grid bias power supply, and the frequency of rf bias is 13.56MHz, power is 50-500W, sedimentation time is 120-160 minute, and the thickness of DLC coating 23 is 0.5-5 μ m, and these DLC coating 23 conductive coefficients are 800-2000W/mK, surmounted existing insulating material, even silver and copper, the important function of DLC coating 23 is horizontal heat conduction, makes the heat rapid diffusion, whole wiring board temperature is even, is particularly suitable for the heat radiation of semiconductor point thermal source;
⑷ the 2nd Si coating deposition, after described DLC deposition step finishes, the indoor throughput 50-70sccm, purity of passing into is 99.999% argon gas to vacuum coating, use the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material through described DLC coating deposition is carried out the Si plated film, applying direct voltage on the described non-balance magnetically controlled sputter negative electrode is 300-700V, sedimentation time is namely to get the 2nd Si coating 24 in 5-20 minute, and its thickness is 100-500nm.
Step 5, the deposition step of metal Cu coating in order to improve the adhesion between PVD composite coating and the Cu coating, also comprises a Ti or Cr or Ni deposition step, is specially:
⑴ Ti or Cr or Ni coating deposition, after described the 2nd Si deposition step finishes, to the indoor argon gas that passes into throughput 50-70sccm of vacuum coating, and the indoor technique vacuum degree of maintenance vacuum coating is 0.1-5Pa, open Ti or Cr or Ni target shielding power supply, use the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material through described the 2nd Si coating deposition is carried out Ti or Cr or Ni plated film, applying direct voltage on the described non-balance magnetically controlled sputter negative electrode is 300-500V, sedimentation time is namely to get Ti or Cr or Ni coating 25 in 5-20 minute, and its thickness is 100-500nm;
⑵ Cu coating deposition, the indoor throughput 50-70sccm, purity of passing into is 99.999% argon gas to vacuum coating, and the indoor technique vacuum degree of maintenance vacuum coating is 0.1-5Pa, unlatching is with copper target sputter cathode power supply, use the non-balance magnetically controlled sputter negative electrode that the aluminium base sheet material through described Ti or Cr or Ni coating deposition is carried out the Cu plated film, applying direct voltage on the described non-balance magnetically controlled sputter negative electrode is 300-500V, obtained Cu coating 26 in sedimentation time 20-40 minute, the thickness of Cu coating 26 is 5 μ m.
Step 6, thickening copper coating plating step can be set up thickening copper by the Cu coating surface in metal coating according to conduction or other arts demands, and thickening copper can adopt traditional electro-plating method to obtain.
After thickening copper was electroplated and finished, because natural copper tends to exist with the form of oxide in air, therefore the unlikely native copper that remains for a long time need to carry out other processing to copper.At the process circuit etching; the seal welding resistance forms solder mask 14; after the lettering symbol; carry out surface treatment forms surface-treated layer 15 with protective effect, guarantees good solderability or electrically on Cu coating or thickening copper coating surface; be shaped at last final products; because technique is identical with common double panel technique, does not repeat them here.
In the said method, when not having the Si coating of its transitional function, can in surperficial Direct precipitation the 3rd tie coat deposition of DLC coating, then deposit the Cu coating.Certainly, for the selection of other technological requirements, also can save the 3rd tie coat deposition step, namely in the surperficial Direct precipitation Cu coating of DLC coating.
The above person of thought, it only is the preferred embodiment of the utility model, when the scope that can not limit with this utility model enforcement, the simple equivalence of namely generally being done according to the utility model claim and utility model description changes and modifies, and all still belongs in the scope that the utility model patent contains.
Claims (10)
1. super-high heat-conductive double-side aluminum wiring board, it is characterized in that: comprise aluminium base sheet material (11), the conductive hole (16) that described aluminium base sheet material (11) upper and lower surface is connected in aluminium base sheet material (11) being used for of offering, reach the alumina layer (12) that is used for insulating heat-conductive that described aluminium base sheet material (11) upper and lower surface and described conductive hole (16) hole wall are processed by method for oxidation, be attached to according to the order of sequence the PVD composite coating (13) on described alumina layer (12) surface and the Cu coating (26) that is used for making the conducting wire for preparing by the PVD method, described PVD composite coating (13) comprises the DLC coating (23) that is used for insulating heat-conductive by the preparation of PVD method at least.
2. super-high heat-conductive double-side aluminum wiring board according to claim 1, it is characterized in that: the thickness of described DLC coating (23) is 0.5um-5um; The thickness of described Cu coating (26) is 5um.
3. super-high heat-conductive double-side aluminum wiring board according to claim 1, it is characterized in that: described PVD composite coating (13) also comprises a Si coating (22), the 2nd Si coating (24) that plays a transition role, and the coating structure of described PVD composite coating sequentially is: a Si coating (22)-DLC coating (23)-the 2nd Si coating (24).
4. super-high heat-conductive double-side aluminum wiring board according to claim 3, it is characterized in that: the thickness of a described Si coating (22) is 100nm-500nm; The thickness of described the 2nd Si coating (24) is 100nm-500nm.
5. according to claim 1 to 4 described any one super-high heat-conductive double-side aluminum wiring boards, it is characterized in that: also be provided with the 3rd tie coat (25) that plays a transition role between described PVD composite coating (13) and the Cu coating (26).
6. super-high heat-conductive double-side aluminum wiring board according to claim 5 is characterized in that: described the 3rd tie coat (25) is Ti coating or Cr coating or Ni coating.
7. super-high heat-conductive double-side aluminum wiring board according to claim 6, it is characterized in that: the thickness of described the 3rd tie coat (25) is 100nm-500nm.
8. super-high heat-conductive double-side aluminum wiring board according to claim 1 is characterized in that: the surface of described Cu coating (26) also is provided with by what electro-plating method prepared and adds thick copper layer.
9. super-high heat-conductive double-side aluminum wiring board according to claim 8 is characterized in that: the described thick copper layer that adds is provided with anti-welding and solder mask (14) protective effect, or/and the surface-treated layer (15) that shields.
10. super-high heat-conductive double-side aluminum wiring board according to claim 1 is characterized in that: the surface of described Cu coating (26) is provided with anti-welding and solder mask (14) protective effect, or/and the surface-treated layer (15) that shields.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220328909 CN202931664U (en) | 2012-07-09 | 2012-07-09 | Double-faced aluminium circuit board with ultrahigh heat conductivity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220328909 CN202931664U (en) | 2012-07-09 | 2012-07-09 | Double-faced aluminium circuit board with ultrahigh heat conductivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202931664U true CN202931664U (en) | 2013-05-08 |
Family
ID=48221566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220328909 Expired - Fee Related CN202931664U (en) | 2012-07-09 | 2012-07-09 | Double-faced aluminium circuit board with ultrahigh heat conductivity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202931664U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102740591A (en) * | 2012-07-09 | 2012-10-17 | 苏州热驰光电科技有限公司 | Double-sided aluminum base circuit board with super-high thermal conductivity and preparation method thereof |
| CN103528010A (en) * | 2013-09-22 | 2014-01-22 | 上海俪德照明科技股份有限公司 | LED photovoltaic module |
| WO2018170958A1 (en) * | 2017-03-23 | 2018-09-27 | 深圳亚信昌科技有限公司 | Double-sided aluminum-based circuit board and fabrication method therefor |
| CN109137035A (en) * | 2018-08-29 | 2019-01-04 | 谢新林 | A kind of preparation method of aluminum-based copper-clad plate |
-
2012
- 2012-07-09 CN CN 201220328909 patent/CN202931664U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102740591A (en) * | 2012-07-09 | 2012-10-17 | 苏州热驰光电科技有限公司 | Double-sided aluminum base circuit board with super-high thermal conductivity and preparation method thereof |
| CN103528010A (en) * | 2013-09-22 | 2014-01-22 | 上海俪德照明科技股份有限公司 | LED photovoltaic module |
| WO2018170958A1 (en) * | 2017-03-23 | 2018-09-27 | 深圳亚信昌科技有限公司 | Double-sided aluminum-based circuit board and fabrication method therefor |
| CN109137035A (en) * | 2018-08-29 | 2019-01-04 | 谢新林 | A kind of preparation method of aluminum-based copper-clad plate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12012660B2 (en) | Method for manufacturing LCP-based flexible copper-clad plate, and article thereof | |
| CN100496188C (en) | Aluminum-base printing circuit board and its production | |
| CN102738377B (en) | Superhigh heat conduction metal-based circuit board as well as preparation method and applications thereof | |
| CN103819215B (en) | Preparation method of aluminium nitride base ceramic copper-clad plate | |
| CN102740591A (en) | Double-sided aluminum base circuit board with super-high thermal conductivity and preparation method thereof | |
| CN108715992B (en) | Copper-graphene composite coating on surface of integrated circuit ceramic circuit board and preparation method thereof | |
| CN109137035B (en) | Preparation method of aluminum-based copper-clad plate | |
| CN103741141A (en) | Method for metalizing aluminum nitride ceramic plate | |
| CN105873371A (en) | Substrate and manufacture method thereof | |
| CN202931664U (en) | Double-faced aluminium circuit board with ultrahigh heat conductivity | |
| WO2017152714A1 (en) | Carrier and manufacturing method therefor, and method for manufacturing core-less package substrate using carrier | |
| CN111962034B (en) | Copper-clad plate and high-speed vacuum preparation method thereof | |
| CN101887942A (en) | Metal baseplate provided with LED and manufacturing method thereof | |
| CN102917534A (en) | DLC (Diamond like Carbon) thin film coating-based ceramic substrate | |
| CN102179970B (en) | Heat conducting material, preparation process thereof and LED (light-emitting diode) circuit board using heat conducting material | |
| KR102216321B1 (en) | Multi-layer thin film for thermal and electric conductivity enhancement and manufacturing method | |
| CN103327735B (en) | High heat conductive insulating metal base printed circuit board | |
| CN103118487B (en) | Super-high heat-conductive metal base circuit board and preparation method thereof | |
| CN108323020A (en) | Production method of ceramic aluminum substrate | |
| CN1705045A (en) | Technological process for preparing flexible conducting material by vacuum sputtering | |
| CN109862689B (en) | Flexible copper-clad plate and preparation method thereof | |
| CN202918581U (en) | Ceramic substrate based on DLC thin film coating | |
| CN103813642B (en) | Method for forming conductive circuit on insulated metal substrate | |
| CN203167426U (en) | Ultrahigh heat-conducting metal-based circuit board | |
| CN202934861U (en) | Metal ceramic composite board and circuit board |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20170120 Granted publication date: 20130508 |
|
| RINS | Preservation of patent right or utility model and its discharge | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20170720 Granted publication date: 20130508 |
|
| PD01 | Discharge of preservation of patent | ||
| PP01 | Preservation of patent right | ||
| PP01 | Preservation of patent right |
Effective date of registration: 20170908 Granted publication date: 20130508 |
|
| PP01 | Preservation of patent right |
Effective date of registration: 20180518 Granted publication date: 20130508 |
|
| PP01 | Preservation of patent right | ||
| PD01 | Discharge of preservation of patent |
Date of cancellation: 20200908 Granted publication date: 20130508 |
|
| PD01 | Discharge of preservation of patent | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130508 Termination date: 20170709 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |