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CN202749414U - Surface adhesive diode for improving heat radiation capability - Google Patents

Surface adhesive diode for improving heat radiation capability Download PDF

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CN202749414U
CN202749414U CN2012203969441U CN201220396944U CN202749414U CN 202749414 U CN202749414 U CN 202749414U CN 2012203969441 U CN2012203969441 U CN 2012203969441U CN 201220396944 U CN201220396944 U CN 201220396944U CN 202749414 U CN202749414 U CN 202749414U
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chip
pad portion
heat dissipation
plane
diode
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萧地域
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LISION TECHNOLOGY Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

一种提升散热能力的表面粘着型二极管，包含：第一金属板片、第二金属板片、第一芯片、导线及绝缘层。第一金属板片包含位于第一平面的第一焊垫部及位于第二平面的第一连接部，其中第一焊垫部与第一连接部彼此相邻的侧边的宽度一致。第二金属板片包含位于第一平面的第二焊垫部及位于第二平面的第二连接部，且第二焊垫部邻近第一焊垫部。第一芯片设置于第一焊垫部上。导线连接于第一芯片与第二金属板片之间。绝缘层包覆第一焊垫部、第二焊垫部、导线及第一芯片。本实用新型的提升散热能力的表面粘着型二极管提高了产品成品率，并且提升了散热效率及电流耐受度。

Figure 201220396944

A surface-mounted diode with improved heat dissipation capability includes: a first metal plate, a second metal plate, a first chip, a wire and an insulating layer. The first metal plate includes a first welding pad portion located on the first plane and a first connecting portion located on the second plane, wherein the widths of adjacent sides of the first welding pad portion and the first connecting portion are consistent. The second metal plate includes a second bonding pad portion located on the first plane and a second connection portion located on the second plane, and the second bonding pad portion is adjacent to the first bonding pad portion. The first chip is disposed on the first pad part. The wire is connected between the first chip and the second metal plate. The insulating layer covers the first bonding pad part, the second bonding pad part, the wire and the first chip. The surface-mounted diode with improved heat dissipation capacity of the utility model improves product yield, heat dissipation efficiency and current tolerance.

Figure 201220396944

Description

提升散热能力的表面粘着型二极管Surface Mount Diodes for Improved Heat Dissipation

技术领域 technical field

本实用新型涉及一种二极管，特别是一种提升散热能力的表面粘着型二极管。The utility model relates to a diode, in particular to a surface-adhesive diode with improved heat dissipation capability.

背景技术 Background technique

由于集成电路技术的发展，电阻、电容、二极管及晶体管等电子元件的体积及重量可获得大幅的缩减。特别是表面粘着式（Surface-mount technology，SMT）的电子元件较针插孔式（Dual in-line package，DIP）电子元件更能让印刷电路板的电路布局得以缩小面积。Due to the development of integrated circuit technology, the volume and weight of electronic components such as resistors, capacitors, diodes and transistors can be greatly reduced. In particular, surface-mount technology (SMT) electronic components can reduce the circuit layout of printed circuit boards more than pin socket (Dual in-line package, DIP) electronic components.

然而，集成电路的电子封装需提供电能传送、信号传递、热去除及机械承载保护等功能。电子零件微小化后，所面临的问题是耐受电流将受到更大的限制。另一方面，由于电子零件微小化之故，电子零件的导热媒介的面积也因此减小，因此如何提升散热效率，将成为一重大课题。However, the electronic packaging of integrated circuits needs to provide functions such as power transmission, signal transmission, heat removal and mechanical load protection. After the miniaturization of electronic components, the problem faced is that the withstand current will be more limited. On the other hand, due to the miniaturization of electronic components, the area of the heat conduction medium of the electronic components is also reduced, so how to improve the heat dissipation efficiency will become a major issue.

以表面粘着型二极管为例，芯片经粘晶（Die bond）工艺而固定于导线架（Lead frame）的基材上后，需要让芯片上的金属垫（Metal pad）与导线架上对应的接点连接起来，以形成电的通路，目前有打线（Wire bond）工艺及覆晶（Flip chip）工艺二种方式。以打线工艺制作表面粘着型二极管的优点是，打线工艺可通过焊线机（Wire bonder）完成，使得产品成品率较以覆晶工艺制作的表面粘着型二极管高。但由于打线工艺是以导线连接于芯片与导线架之间，以致于散热能力不佳。Taking the surface mount diode as an example, after the chip is fixed on the substrate of the lead frame (Lead frame) through the Die bond process, it is necessary to make the metal pad on the chip (Metal pad) and the corresponding contact on the lead frame To connect them to form an electrical path, there are currently two methods: Wire bond and Flip chip. The advantage of using the wire bonding process to make surface mount diodes is that the wire bonding process can be completed by a wire bonder (Wire bonder), which makes the product yield higher than that of surface mount diodes made by flip chip technology. However, since the wire bonding process uses wires to connect the chip and the lead frame, the heat dissipation capability is not good.

然而，覆晶工艺是以导线架将芯片上下夹持住，使得导线架与芯片之间能有较大的接触面积，因此散热效率较高（相较于打线工艺）。但由于覆晶工艺需辅以人工方式进行，因此产品成品率相较于打线工艺为低。However, the flip chip process uses a lead frame to clamp the chip up and down, so that there is a larger contact area between the lead frame and the chip, so the heat dissipation efficiency is higher (compared to the wire bonding process). However, because the flip chip process needs to be supplemented by manual methods, the product yield is lower than that of the wire bonding process.

因此，如何兼顾的表面粘着型二极管产品成品率，并提升表面粘着型二极管的散热效率及电流耐受度，是本领域研究人员致力研究的课题。Therefore, how to balance the product yield of surface-mounted diodes and improve the heat dissipation efficiency and current tolerance of surface-mounted diodes is a topic that researchers in this field are dedicated to studying.

实用新型内容 Utility model content

鉴于以上的问题，本实用新型在于提供一种提升散热能力的表面粘着型二极管，藉以解决先前技术所存在如何兼顾的表面粘着型二极管产品成品率，并提升表面粘着型二极管的散热效率及电流耐受度的问题。In view of the above problems, the utility model is to provide a surface-mounted diode with improved heat dissipation capability, so as to solve the problem of how to balance the product yield of the surface-mounted diode in the prior art, and improve the heat dissipation efficiency and current resistance of the surface-mounted diode. The question of acceptance.

为了实现上述目的，本实用新型的提升散热能力的表面粘着型二极管，包含：In order to achieve the above-mentioned purpose, the surface-mounted diode with improved heat dissipation capacity of the present invention includes:

一第一金属板片，包含位于一第一平面的一第一焊垫部及位于一第二平面的一第一连接部，其中该第一焊垫部与该第一连接部彼此相邻的侧边的宽度一致；A first metal sheet, including a first welding pad portion located on a first plane and a first connection portion located on a second plane, wherein the first welding pad portion and the first connection portion are adjacent to each other The width of the sides is the same;

一第二金属板片，包含位于该第一平面的一第二焊垫部及位于该第二平面的一第二连接部，且该第二焊垫部邻近该第一焊垫部；A second metal sheet, including a second pad portion located on the first plane and a second connection portion located on the second plane, and the second pad portion is adjacent to the first pad portion;

一第一芯片，设置于该第一焊垫部上；a first chip, disposed on the first pad portion;

一导线，连接于该第一芯片与该第二金属板片之间；以及a wire connected between the first chip and the second metal plate; and

一绝缘层，包覆该第一焊垫部、该第二焊垫部、该导线及该第一芯片。An insulating layer covers the first pad part, the second pad part, the wire and the first chip.

上述的提升散热能力的表面粘着型二极管，其中，更包含一第二芯片，设置于该第二焊垫部上，该导线连接该第一芯片与该第二芯片，且该绝缘层更包覆该第二芯片。The above-mentioned surface mount diode for improving heat dissipation further includes a second chip disposed on the second pad, the wire connects the first chip and the second chip, and the insulating layer further covers the second chip.

上述的提升散热能力的表面粘着型二极管，其中，该第二金属板片的该第二焊垫部与该第二连接部彼此相邻的侧边的宽度一致。In the above-mentioned surface mount diode with enhanced heat dissipation capability, the width of the second pad portion of the second metal plate and the adjacent sides of the second connecting portion are the same.

上述的提升散热能力的表面粘着型二极管，其中，该第一连接部以该第一焊垫部的最大横向宽度向外延伸，该第二连接部以该第二焊垫部的最大横向宽度向外延伸。In the above-mentioned surface mount diode with improved heat dissipation capability, the first connection portion extends outwards with the maximum lateral width of the first pad portion, and the second connection portion extends outward with the maximum lateral width of the second pad portion. extend outside.

上述的提升散热能力的表面粘着型二极管，其特征在于，该第一金属板片的形状为矩形，经冲压形成位于该第一平面的该第一焊垫部及位于该第二平面的该第一连接部，且该第二金属板片的形状为矩形，经冲压形成位于该第一平面的该第二焊垫部及位于该第二平面的该第二连接部。The above-mentioned surface-mounted diode for improving heat dissipation is characterized in that the first metal plate is rectangular in shape, and is stamped to form the first welding pad portion located on the first plane and the second pad portion located on the second plane. A connection part, and the shape of the second metal plate is rectangular, and the second welding pad part located on the first plane and the second connection part located on the second plane are formed by stamping.

上述的提升散热能力的表面粘着型二极管，其中，该第一连接部的横向宽度为该绝缘层的横向宽度的60％至80％。In the above-mentioned surface mount diode with enhanced heat dissipation capability, the lateral width of the first connecting portion is 60% to 80% of the lateral width of the insulating layer.

上述的提升散热能力的表面粘着型二极管，其中，该第二连接部的横向宽度为该绝缘层的横向宽度的60％至80％。In the above-mentioned surface mount diode with enhanced heat dissipation capability, the lateral width of the second connecting portion is 60% to 80% of the lateral width of the insulating layer.

上述的提升散热能力的表面粘着型二极管，其中，该第一连接部为一阴极接脚，该第二连接部为一阳极接脚。In the above-mentioned surface mount diode with enhanced heat dissipation capability, the first connection part is a cathode pin, and the second connection part is an anode pin.

上述的提升散热能力的表面粘着型二极管，其中，该导线连接该第一芯片与该第二金属板片的该第二焊垫部。In the above-mentioned surface mount diode with enhanced heat dissipation capability, the wire connects the first chip and the second pad portion of the second metal plate.

根据本实用新型的提升散热能力的表面粘着型二极管，藉由增加并保持第一金属板片的横向宽度，而改善打线工艺制作的产品具有散热能力差的缺点。此外，电流耐受度亦可获得提升。According to the surface mount diode with improved heat dissipation capability of the present invention, by increasing and maintaining the lateral width of the first metal plate, the products manufactured by the wire bonding process have the disadvantage of poor heat dissipation capability. In addition, the current tolerance can also be improved.

以下结合附图和具体实施例对本实用新型进行详细描述，但不作为对本实用新型的限定。The utility model will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the utility model.

附图说明 Description of drawings

图1为本实用新型第一实施例的表面粘着型二极管的俯视图；FIG. 1 is a top view of a surface-mounted diode according to a first embodiment of the present invention;

图2为本实用新型第一实施例的表面粘着型二极管的侧视图；Fig. 2 is a side view of the surface mount diode of the first embodiment of the utility model;

图3为本实用新型第二实施例的表面粘着型二极管的俯视图；FIG. 3 is a top view of a surface mount diode according to a second embodiment of the present invention;

图4为本实用新型第三实施例的表面粘着型二极管的俯视图；FIG. 4 is a top view of a surface-mount diode according to a third embodiment of the present invention;

图5为本实用新型第三实施例的表面粘着型二极管的侧视图。FIG. 5 is a side view of a surface mount diode according to a third embodiment of the present invention.

其中，附图标记Among them, reference signs

100          表面粘着型二极管100 Surface Mount Diodes

110          第一金属板片110 first metal plate

111          第一焊垫部111 The first welding pad part

113          第一连接部113 The first connecting part

120          第二金属板片120 Second metal plate

121          第一焊垫部121 The first welding pad part

123          第一连接部123 The first connecting part

130          第一芯片130 first chip

140          导线140 wire

150          绝缘层150 insulation layer

160          第二芯片160 second chip

S1           第一平面S1 first plane

S2           第二平面S2 Second Plane

W1、W2、W3     横向宽度W1, W2, W3 Horizontal width

具体实施方式 Detailed ways

下面结合附图和具体实施例对本实用新型技术方案进行详细的描述，以更进一步了解本实用新型的目的、方案及功效，但并非作为本实用新型所附权利要求保护范围的限制。The technical scheme of the utility model is described in detail below in conjunction with the accompanying drawings and specific embodiments, so as to further understand the purpose, scheme and effect of the utility model, but not as a limitation of the scope of protection of the appended claims of the utility model.

图1为本实用新型第一实施例的表面粘着型二极管100的俯视图。图2为本实用新型第一实施例的表面粘着型二极管100的侧视图。FIG. 1 is a top view of a surface mount diode 100 according to a first embodiment of the present invention. FIG. 2 is a side view of the surface mount diode 100 according to the first embodiment of the present invention.

合并参照图1及图2，提升散热能力的表面粘着型二极管100包含第一金属板片110、第二金属板片120、第一芯片130、导线140及绝缘层150。Referring to FIG. 1 and FIG. 2 together, the surface mount diode 100 for improving heat dissipation includes a first metal plate 110 , a second metal plate 120 , a first chip 130 , wires 140 and an insulating layer 150 .

第一金属板片110包含位于第一平面S1的第一焊垫部111及位于第二平面S2的第一连接部113。第二金属板片120包含位于第一平面S1的第二焊垫部121及位于第二平面S2的第二连接部123，且第二焊垫部121邻近第一焊垫部111。详言之，第一金属板片110与第二金属板片120相对设置，第一焊垫部111及第二焊垫部121分别设置于第一金属板片110与第二金属板片120相邻的一端，第一连接部113及第二连接部123则分别设置于第一金属板片110与第二金属板片120的另一端。The first metal sheet 110 includes a first pad portion 111 located on the first plane S1 and a first connection portion 113 located on the second plane S2. The second metal sheet 120 includes a second pad portion 121 located on the first plane S1 and a second connection portion 123 located on the second plane S2 , and the second pad portion 121 is adjacent to the first pad portion 111 . In detail, the first metal plate 110 and the second metal plate 120 are disposed opposite to each other, and the first welding pad portion 111 and the second welding pad portion 121 are respectively disposed on the opposite sides of the first metal plate 110 and the second metal plate 120. On the adjacent end, the first connecting portion 113 and the second connecting portion 123 are respectively disposed on the other ends of the first metal plate 110 and the second metal plate 120 .

第一芯片130设置于第一焊垫部110上。导线140连接于第一芯片130与第二金属板片120之间。如图1所示，导线140连接第一芯片130与第二金属板片120的第二焊垫部121。The first chip 130 is disposed on the first pad portion 110 . The wire 140 is connected between the first chip 130 and the second metal plate 120 . As shown in FIG. 1 , the wire 140 connects the first chip 130 and the second pad portion 121 of the second metal plate 120 .

绝缘层150包覆第一焊垫部111、第二焊垫部121、导线140及第一芯片130（为清楚呈现绝缘层150内部的元件，故以虚线表示）。也就是说，至少部分的第一连接部113及至少部分的第二连接部123显露于绝缘层150之外，藉以供外部电路电性连接于第一连接部113及第二连接部123，而对表面粘着型二极管100施加电压。The insulating layer 150 covers the first bonding pad portion 111 , the second bonding pad portion 121 , the wire 140 and the first chip 130 (in order to clearly show the components inside the insulating layer 150 , they are represented by dotted lines). That is to say, at least part of the first connection part 113 and at least part of the second connection part 123 are exposed outside the insulating layer 150, so that an external circuit is electrically connected to the first connection part 113 and the second connection part 123, and A voltage is applied to the surface mount diode 100 .

于此，第一焊垫部111与第一连接部113彼此相邻的侧边的宽度一致。藉此，当表面粘着型二极管100设置于印刷电路板而作用时，第一芯片130所产生的热能可快速地由第一焊垫部111传导至第一连接部113，并通过印刷电路板散逸。Here, the widths of adjacent sides of the first pad portion 111 and the first connecting portion 113 are the same. Thereby, when the surface mount diode 100 is set on the printed circuit board and functions, the heat energy generated by the first chip 130 can be quickly conducted from the first pad part 111 to the first connecting part 113, and dissipated through the printed circuit board .

在一具体应用例中，如图1及图2所示，第一金属板片110的形状为矩形，经冲压形成位于第一平面S1的第一焊垫部111及位于第二平面S2的第一连接部113。藉此，第一焊垫部111与第一连接部113彼此相邻的侧边的宽度可达到一致。相似地，第二金属板片120的形状同样可为矩形，经冲压形成位于第一平面S1的第二焊垫部121及位于第二平面S2的第二连接部123。In a specific application example, as shown in FIG. 1 and FIG. 2 , the first metal sheet 110 is rectangular in shape, and is stamped to form the first welding pad portion 111 on the first plane S1 and the second pad portion 111 on the second plane S2. A connection part 113 . Thereby, the widths of the adjacent sides of the first pad portion 111 and the first connecting portion 113 can be consistent. Similarly, the shape of the second metal sheet 120 can also be rectangular, and the second pad portion 121 on the first plane S1 and the second connection portion 123 on the second plane S2 are formed by stamping.

图3为本实用新型第二实施例的表面粘着型二极管100的俯视图。第二实施例的表面粘着型二极管100的侧视图请参照图2。FIG. 3 is a top view of a surface mount diode 100 according to a second embodiment of the present invention. Please refer to FIG. 2 for a side view of the surface mount diode 100 of the second embodiment.

参照图3，第二实施例与第一实施例的差异在于第一金属板片110的形状不同，特别是第二实施例的第一焊垫部111于对应于表面粘着型二极管100的内侧具有二个缺角，但本实施例并非以此为限，第二金属板片120的形状亦可视需求调整。图3用以说明第三实施例的第一连接部113，是以第一焊垫部111的最大横向宽度W1为横向宽度而向外延伸。相似地，第二连接部123以第二焊垫部121的最大横向宽度W1为横向宽度而向外延伸。Referring to FIG. 3 , the difference between the second embodiment and the first embodiment is that the shape of the first metal plate 110 is different, especially the first soldering pad portion 111 of the second embodiment has an inner side corresponding to the surface mount diode 100 There are two missing corners, but this embodiment is not limited thereto, and the shape of the second metal sheet 120 can also be adjusted according to requirements. FIG. 3 is used to illustrate the first connection portion 113 of the third embodiment, which extends outward with the maximum lateral width W1 of the first pad portion 111 as the lateral width. Similarly, the second connecting portion 123 extends outward with the maximum lateral width W1 of the second pad portion 121 as the lateral width.

因此，第一金属板片110或第二金属板片120于绝缘层150的内部及外部的邻接处附近可保持相同的横向宽度W1。并且，以兼顾表面粘着型二极管100的可靠度为前提，尽可能地提高横向宽度W1至最大值。藉此，表面粘着型二极管100的散热效率能获得提升。Therefore, the first metal plate 110 or the second metal plate 120 can maintain the same lateral width W1 near the inner and outer adjoining portions of the insulating layer 150 . Moreover, on the premise of taking into account the reliability of the surface mount diode 100 , the lateral width W1 is increased to a maximum value as much as possible. Thereby, the heat dissipation efficiency of the surface mount diode 100 can be improved.

在一具体应用例中，如图1所示，第二金属板片120的第二焊垫部121与第二连接部123彼此相邻的侧边的宽度一致。藉此，当部分由第一芯片130所产生的热能经导线140传导至第二焊垫部121时，可快速传导至第二连接部123，并经由印刷电路板散逸。In a specific application example, as shown in FIG. 1 , the widths of adjacent sides of the second pad portion 121 and the second connecting portion 123 of the second metal sheet 120 are consistent. In this way, when part of the heat energy generated by the first chip 130 is conducted to the second pad portion 121 through the wire 140 , it can be quickly conducted to the second connection portion 123 and dissipated through the printed circuit board.

再参照图1，为了使表面粘着型二极管100的散热效率能获得提升，第一连接部111的横向宽度W1大约为绝缘层150的横向宽度W3的60％至80％。相似地，第二连接部121的横向宽度W2大约为绝缘层150的横向宽度W3的60％至80％。Referring again to FIG. 1 , in order to improve the heat dissipation efficiency of the surface mount diode 100 , the lateral width W1 of the first connecting portion 111 is about 60% to 80% of the lateral width W3 of the insulating layer 150 . Similarly, the lateral width W2 of the second connection portion 121 is about 60% to 80% of the lateral width W3 of the insulating layer 150 .

以SOD-123封装为例，第一连接部111的横向宽度W1实质可为1.3毫米（Millimeter，mm），绝缘层150的横向宽度W3实质可为1.9毫米。Taking the SOD-123 package as an example, the lateral width W1 of the first connecting portion 111 may be substantially 1.3 mm (Millimeter, mm), and the lateral width W3 of the insulating layer 150 may be substantially 1.9 mm.

图4为本实用新型第二实施例的表面粘着型二极管100的俯视图。图5为本实用新型第二实施例的表面粘着型二极管100的侧视图。FIG. 4 is a top view of a surface mount diode 100 according to a second embodiment of the present invention. FIG. 5 is a side view of a surface mount diode 100 according to a second embodiment of the present invention.

合并参照图4及图5，与第一实施例的差异在于，第三实施例的表面粘着型二极管100更包含第二芯片160。Referring to FIG. 4 and FIG. 5 together, the difference from the first embodiment is that the surface mount diode 100 of the third embodiment further includes a second chip 160 .

如图4所示，第二芯片160设置于第二焊垫部121上。导线140连接第一芯片130与第二芯片160。绝缘层150除包覆第一焊垫部111、第二焊垫部121、导线140及第一芯片130外，还包覆第二芯片160。As shown in FIG. 4 , the second chip 160 is disposed on the second bonding pad portion 121 . The wire 140 connects the first chip 130 and the second chip 160 . In addition to covering the first bonding pad portion 111 , the second bonding pad portion 121 , the wire 140 and the first chip 130 , the insulating layer 150 also covers the second chip 160 .

由于第三实施例的表面粘着型二极管100包含设置于第一焊垫部111的第一芯片130及设置于第二焊垫部121的第二芯片140，因此第一芯片130所产生的热能主要由第一连接部113传导至外部，第二芯片160所产生的热能主要由第二连接部123传导至外部。Since the surface mount diode 100 of the third embodiment includes the first chip 130 disposed on the first pad portion 111 and the second chip 140 disposed on the second pad portion 121, the heat energy generated by the first chip 130 is mainly The heat energy generated by the second chip 160 is mainly conducted to the outside through the second connection portion 123 .

在一具体应用例中，第一连接部113为阴极接脚，第二连接部123为阳极接脚。表面粘着型二极管100为肖特基（Schottky diode）二极管或齐纳二极管（Zener diode）。第一芯片130及第二芯片160的材质可为硅，其上下表面可包含至少一金属层，藉以供导线140固接于第一芯片130或/及第二芯片160。导线140可以金、铜、铝等金属材质或合金制成。第一芯片130可通过焊锡或银胶等粘晶材料固定于第一金属板片110上。第二芯片160同样可通过焊锡或银胶等粘晶材料固定于第二金属板片120上。第一金属板片110及第二金属板片120合称为导线架，其可以金、银、铜、铁、铝、镍等金属材质或合金制成。绝缘层150可以环氧树脂封装材料（Epoxy molding compound）实现。由于导线架、导线140、绝缘层150、第一芯片130及第二芯片160的工艺与运作原理为本领域的技术人员所熟知，故于此不再赘述。In a specific application example, the first connecting portion 113 is a cathode pin, and the second connecting portion 123 is an anode pin. The surface mount diode 100 is a Schottky diode or a Zener diode. The material of the first chip 130 and the second chip 160 can be silicon, and the upper and lower surfaces thereof can include at least one metal layer, so that the wire 140 can be fixedly connected to the first chip 130 or/and the second chip 160 . The wire 140 can be made of gold, copper, aluminum and other metal materials or alloys. The first chip 130 can be fixed on the first metal plate 110 by a die-bonding material such as solder or silver glue. The second chip 160 can also be fixed on the second metal plate 120 by a die-bonding material such as solder or silver glue. The first metal plate 110 and the second metal plate 120 are collectively referred to as a lead frame, which can be made of gold, silver, copper, iron, aluminum, nickel and other metal materials or alloys. The insulation layer 150 can be realized by epoxy molding compound. Since the processes and operating principles of the lead frame, the wires 140 , the insulating layer 150 , the first chip 130 and the second chip 160 are well known to those skilled in the art, details are not repeated here.

综上所述，根据本实用新型的提升散热能力的表面粘着型二极管100，藉由增加并保持第一金属板片110的横向宽度，而改善打线工艺制作的产品具有散热能力差的缺点。再者，由于导线架的横向宽度变大了，表面粘着型二极管100能承受的电流亦可获得提升。此外，由于第一焊垫部111或第二焊垫部121的面积增加，故可承载更大尺寸的第一芯片130与第二芯片160。藉此，可维持原印刷电路板的电路布局，而以本实用新型的表面粘着型二极管100替代其他相同或近似尺寸的二极管产品。To sum up, according to the surface mount diode 100 with improved heat dissipation capability of the present invention, by increasing and maintaining the lateral width of the first metal plate 110 and improving the wire bonding process, the product has the disadvantage of poor heat dissipation capability. Furthermore, since the lateral width of the lead frame becomes larger, the current that the surface mount diode 100 can withstand can also be increased. In addition, since the area of the first pad portion 111 or the second pad portion 121 is increased, the first chip 130 and the second chip 160 of a larger size can be carried. In this way, the circuit layout of the original printed circuit board can be maintained, and the surface mount diode 100 of the present invention can be used to replace other diode products with the same or similar dimensions.

另一方面，本实用新型的表面粘着型二极管100可用以取代其他封装较大的二极管产品，例如SOD-123封装的本实用新型的表面粘着型二极管100可取代封装尺寸较大的二极管产品（如SMA封装）。藉此，可缩小印刷电路板的布局面积。On the other hand, the surface-mounted diode 100 of the present invention can be used to replace other diode products with larger packages. For example, the surface-mounted diode 100 of the present invention packaged in SOD-123 can replace diode products with larger packages (such as SMA package). Thereby, the layout area of the printed circuit board can be reduced.

当然，本实用新型还可有其它多种实施例，在不背离本实用新型精神及其实质的情况下，熟悉本领域的技术人员当可根据本实用新型作出各种相应的改变和变形，但这些相应的改变和变形都应属于本实用新型所附的权利要求的保护范围。Of course, the utility model can also have other various embodiments, and those skilled in the art can make various corresponding changes and deformations according to the utility model without departing from the spirit and essence of the utility model, but These corresponding changes and deformations should all belong to the protection scope of the appended claims of the present utility model.

Claims (9)

1.一种提升散热能力的表面粘着型二极管，其特征在于，包含：1. A surface-mounted diode for improving heat dissipation, characterized in that it comprises: 一第一金属板片，包含位于一第一平面的一第一焊垫部及位于一第二平面的一第一连接部，其中该第一焊垫部与该第一连接部彼此相邻的侧边的宽度一致；A first metal sheet, including a first welding pad portion located on a first plane and a first connection portion located on a second plane, wherein the first welding pad portion and the first connection portion are adjacent to each other The width of the sides is the same; 一第二金属板片，包含位于该第一平面的一第二焊垫部及位于该第二平面的一第二连接部，且该第二焊垫部邻近该第一焊垫部；A second metal sheet, including a second pad portion located on the first plane and a second connection portion located on the second plane, and the second pad portion is adjacent to the first pad portion; 一第一芯片，设置于该第一焊垫部上；a first chip, disposed on the first pad portion; 一导线，连接于该第一芯片与该第二金属板片之间；以及a wire connected between the first chip and the second metal plate; and 一绝缘层，包覆该第一焊垫部、该第二焊垫部、该导线及该第一芯片。An insulating layer covers the first pad part, the second pad part, the wire and the first chip. 2.根据权利要求1所述的提升散热能力的表面粘着型二极管，其特征在于，更包含一第二芯片，设置于该第二焊垫部上，该导线连接该第一芯片与该第二芯片，且该绝缘层更包覆该第二芯片。2. The surface-mounted diode for improving heat dissipation according to claim 1, further comprising a second chip disposed on the second pad portion, the wire connecting the first chip and the second chip, and the insulating layer further covers the second chip. 3.根据权利要求1或2所述的提升散热能力的表面粘着型二极管，其特征在于，该第二金属板片的该第二焊垫部与该第二连接部彼此相邻的侧边的宽度一致。3. The surface-mount diode for improving heat dissipation according to claim 1 or 2, wherein the second pad portion and the second connecting portion of the second metal plate are adjacent to each other on the sides Same width. 4.根据权利要求1或2所述的提升散热能力的表面粘着型二极管，其特征在于，该第一连接部以该第一焊垫部的最大横向宽度向外延伸，该第二连接部以该第二焊垫部的最大横向宽度向外延伸。4. The surface-mount diode for improving heat dissipation according to claim 1 or 2, wherein the first connecting portion extends outward with the maximum lateral width of the first pad portion, and the second connecting portion extends outward with the maximum lateral width of the first pad portion. The maximum lateral width of the second pad portion extends outward. 5.根据权利要求1或2所述的提升散热能力的表面粘着型二极管，其特征在于，该第一金属板片的形状为矩形，经冲压形成位于该第一平面的该第一焊垫部及位于该第二平面的该第一连接部，且该第二金属板片的形状为矩形，经冲压形成位于该第一平面的该第二焊垫部及位于该第二平面的该第二连接部。5. The surface-mount diode for improving heat dissipation according to claim 1 or 2, wherein the first metal plate is rectangular in shape, and the first welding pad portion located on the first plane is formed by stamping and the first connection portion located on the second plane, and the shape of the second metal sheet is rectangular, and the second pad portion located on the first plane and the second pad portion located on the second plane are formed by stamping. connecting part. 6.根据权利要求1或2所述的提升散热能力的表面粘着型二极管，其特征在于，该第一连接部的横向宽度为该绝缘层的横向宽度的60％至80％。6 . The surface-mount diode for improving heat dissipation according to claim 1 , wherein the lateral width of the first connecting portion is 60% to 80% of the lateral width of the insulating layer. 7 . 7.根据权利要求1或2所述的提升散热能力的表面粘着型二极管，其特征在于，该第二连接部的横向宽度为该绝缘层的横向宽度的60％至80％。7 . The surface mount diode for improving heat dissipation according to claim 1 , wherein the lateral width of the second connecting portion is 60% to 80% of the lateral width of the insulating layer. 8.根据权利要求1或2所述的提升散热能力的表面粘着型二极管，其特征在于，该第一连接部为一阴极接脚，该第二连接部为一阳极接脚。8 . The surface mount diode for improving heat dissipation according to claim 1 , wherein the first connection portion is a cathode pin, and the second connection portion is an anode pin. 9 . 9.根据权利要求1或2所述的提升散热能力的表面粘着型二极管，其特征在于，该导线连接该第一芯片与该第二金属板片的该第二焊垫部。9 . The surface-mount diode for improving heat dissipation according to claim 1 or 2 , wherein the wire connects the first chip and the second pad portion of the second metal plate. 10 .
CN2012203969441U 2012-03-14 2012-08-10 Surface adhesive diode for improving heat radiation capability Expired - Lifetime CN202749414U (en)

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