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CN202712254U - 具有高集成高光效的热电分离功率型发光二极体 - Google Patents

具有高集成高光效的热电分离功率型发光二极体 Download PDF

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CN202712254U
CN202712254U CN2012201089875U CN201220108987U CN202712254U CN 202712254 U CN202712254 U CN 202712254U CN 2012201089875 U CN2012201089875 U CN 2012201089875U CN 201220108987 U CN201220108987 U CN 201220108987U CN 202712254 U CN202712254 U CN 202712254U
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emitting diode
light
thermoelectric separation
concave cup
separation power
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罗嗣辉
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Ao Qisi Science And Technology Co Ltd
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GUANGDONG OUTRACE TECHNOLOGY CO LTD
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    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract

本实用新型的一种具有高集成高光效的热电分离功率型发光二极体，所述发光二极体包括贴片式支架、发光二极体晶片和金线，支架上表面形成凹杯，支架的左右两侧设有独立导通至凹杯两侧中的导电通道、底面设有中部通至凹杯中部的导热通道，发光二极体晶片通过导热绝缘胶与导热通道相贴合、其两极分别通过金线与导电通道电连接，凹杯中灌封由硅胶与荧光粉混合体构成的荧光胶体；本实用新型热电分离设计使LED晶片工作时散发的热量能及时独立地传导到散热基板上，减小热量对第二点焊接可靠性及晶片寿命的影响；本实用新型采用多晶串并集成、热电分离设计，具有高光效，独立的热、电通道、结构简单、散热效果好的等技术效果。

Description

具有高集成高光效的热电分离功率型发光二极体
技术领域
本实用新型涉及一种发光二极体，更具体地说，涉及一种具有高集或高光效的热电分离功率型发光二极体。
背景技术
随着电子技术的进步，利用LED照明灯具越来越普遍，由于LED是利用半导体通电后的发光性能发光的，由于LED是一种寿命长、功率低、无辐射的绿色环保光源，因此被广泛应用于背光源、显示屏、交通信号灯、城市亮化等领域，未来更将取代白炽灯、节能灯照明应用，成为新一代的照明光源，广泛应用于室内外普通照明及特殊照明。
传统的发光二极体为达到高亮度而采用大功率晶片，当前大功率二极体封装技术主要是单晶大功率封装，其虽可以获得高的光通量，但其光效低，且发热量高，发热量集中在一个晶片上，对晶片的可靠性及寿命均有较大的影响，同时当前发光体二极体结构其热通道与电通道为共用一个通道，甚至有的设计并没有独立导热通道，而电通道主要是靠键合金线将晶片正负电极与支架焊脚连接起来，所以晶片发出的热量会对二极体电路结构有较大的热影响，影响到金线与支架焊接的可靠性，及因为没有独立的导热通道，对晶片的光衰也会有很大的影响。因此，如何解决上述问题，成为亟待解决的问题。
实用新型内容
本实用新型旨在提供一种采用多晶串并集成、热电分离设计，具有高光效，独立的热、电通道、结构简单、散热效果好的具有高集成高光效的热电分离功率型发光二极体。
为解决上述技术问题，本实用新型的一种具有高集成高光效的热电分离功率型发光二极体，所述发光二极体包括贴片式支架、发光二极体晶片和金线，支架上表面形成凹杯，支架的左右两侧设有独立导通至凹杯两侧中的导电通道、底面设有中部通至凹杯中部的导热通道，发光二极体晶片通过导热绝缘胶与导热通道相贴合、其两极分别通过金线与导电通道电连接，凹杯中灌封由硅胶与荧光粉混合体构成的荧光胶体。采用上述结构后本实用新型的导电通道和导热通道之间形成相隔离独立，实现热电分离的技术效果，热电分离设计使LED晶片工作时散发的热量能及时独立地传导至散热基板上，减小热量对第二点焊接可靠性及晶片寿命的影响。
上述的一种具有高集成高光效的热电分离功率型发光二极体，所述发光二极体晶片包括并联每组由至少二个相串联的小功率晶片串高集成封装方式构成。
上述的一种具有高集成高光效的热电分离功率型发光二极体，每组相串联的小功率晶片的为二～六个，由二至六组小功率晶片串相并联构成。采用小功率晶片，高集成度封装方式，并采用新型LED贴片热电分离设计的发光二极体，小功率晶片和高集成度封装实现获得更高的光通量及高光效性能。
上述的一种具有高集成高光效的热电分离功率型发光二极体，所述凹杯呈倒锥形，其锥角为55～65度。
上述的一种具有高集成高光效的热电分离功率型发光二极体，所述导电通道相互对称设置。
上述的一种具有高集成高光效的热电分离功率型发光二极体，所述支架为方形贴片。
上述的一种具有高集成高光效的热电分离功率型发光二极体，所述导电通道和导热通道均为C194磷青铜材质的正极或负极电通道。
本实用新型采用上述结构后，一种高集成高光效的热电分离设计的功率型发光二极体，采用小功率晶片，串并后的晶片功率不超过1W，通过串并的高集成封装方式，获得高光通量及高光效，解决目前功率型发光二极体光效普遍不高的问题。
同时采用热电分离设计，具有独立的导电通道及导热通道的新型LED贴片支架，将热与电有效区分独立，解决晶片发光时的热量对金线与支架焊接品质的影响，保证产品的焊接可靠性。独立的导热通道能将热量及时有效的热量散出，减小热量对晶片寿命的影响，解决当前晶片热量没有独立的导热通道，热量不能有效散出，对晶片寿命及品质的影响。
本实用新型与现有技术相比具有结构简单、制造成本低的优点，具有良好的推广价值。
附图说明
下面将结合附图中的具体实施例对本实用新型作进一步地详细说明，以便更清楚直观地理解其实用新型实质，但不构成对本实用新型的任何限制。
图1为本实用新型的剖面结构剖面图；
图2为图1的俯视结构示意图；
图3为图1的仰视结构示意图；
图4为图2的右视图；
图5为本实用新型贴片式支架的剖面结构示意图；
图6为本实用新型发光二极体晶片的其中一种电路结构实施示意图；
图7为本实用新型发光二极体晶片的另一种电路结构实施示意图；
图8为本实用新型发光二极体晶片的再一种电路结构实施示意图；
图9为本实用新型发光二极体晶片封装方法的流程示意图。
图中：3为发光二极体，31为贴片式支架，31a为凹杯，31b、31c为导电通道，31d为导热通道，32为发光二极体晶片，33为金线。
具体实施方式
如图1～图5所示：一种具有高集成高光效的热电分离功率型发光二极体，所述发光二极体3包括贴片式支架31、发光二极体晶片32和金线33，支架31上表面形成凹杯31a，支架31的左右两侧设有独立导通至凹杯31a两侧中的导电通道31b、31c、底面设有中部通至凹杯31a中部的导热通道31d，发光二极体晶片32通过导热绝缘胶31e与导热通道31d相贴合、其两极分别通过金线33与导电通道31b、31c电连接，凹杯31a中灌封由硅胶与荧光粉混合体构成的荧光胶体31f。
发光二极体晶片32包括并联每组由至少二个相串联的小功率晶片串高集成封装方式构成。
每组相串联的小功率晶片32a的为二～六个，由二至六组小功率晶片串相并联构成。
如图6所示，每组相串联的小功率晶片32a的为二个，由二组小功率晶片串相并联构成。
如图7所示，每组相串联的小功率晶片32a的为二个，由五组小功率晶片串相并联构成。
如图8所示，每组相串联的小功率晶片32a的为三个，由五组小功率晶片串相并联构成。
如图4所示，凹杯31a呈倒锥形，其锥角为55～65度，以60度为佳。
如图3所示，导电通道31b、31c相互对称设置。
支架31为方形贴片。
导电通道31b、31c和导热通道31d均为C194磷青铜材质的正极或负极电通道。
本实用新型在具体实施时，如图9所示，一种具有高集成高光效的热电分离功率型发光二极体的封装方法，包括如下步骤：
(1)将串并排列方式的发光二极体晶片32通过高导热、低热阻的导热绝缘胶31e用高精度的自动固晶机固定在具有独立的热、电通道结构的二极体支架的热通道上，然后用工业烤箱高温烘烤固化；
(2)再用高纯度的键合金线33，通过高精度的超声波焊线机，将发光二极体晶片32与支架的导电通道31b、31c进行键合焊接。
(3)根据发光二极体光的参数要求，采用蓝光激发荧光粉混合白光的方式将高折射率的硅胶与荧光粉进行混合配胶的荧光胶体31f灌封到支架杯壳内，然后用工业烤箱高温烘烤固化制成胶体；经过如上工艺，即制成高集成高光效的热电分离功率型发光二极体。
键合金线33为99.99％高纯度金线。
荧光胶体31f为90～96％的1.53高折射率硅胶与10％～4％的荧光粉混合构成。
综上所述，本实用新型已如说明书及图示内容，制成实际样品且经多次使用测试，从使用测试的效果看，可证明本实用新型能达到其所预期之目的，实用性价值乃无庸置疑。以上所举实施例仅用来方便举例说明本实用新型，并非对本实用新型作任何形式上的限制，任何所属技术领域中具有通常知识者，若在不脱离本实用新型所提技术特征的范围内，利用本实用新型所揭示技术内容所作局部更动或修饰的等效实施例，并且未脱离本实用新型的技术特征内容，均仍属于本实用新型技术特征的范围。

Claims (7)

1.一种具有高集成高光效的热电分离功率型发光二极体，其特征在于：所述发光二极体(3)包括贴片式支架(31)、发光二极体晶片(32)和金线(33)，支架(31)上表面形成凹杯(31a)，支架(31)的左右两侧设有独立导通至凹杯(31a)两侧中的导电通道(31b、31c)、底面设有中部通至凹杯(31a)中部的导热通道(31d)，发光二极体晶片(32)通过导热绝缘胶(31e)与导热通道(31d)相贴合、其两极分别通过金线(33)与导电通道(31b、31c)电连接，凹杯(31a)中灌封有荧光胶体(31f)。 
2.根据权利要求1所述一种具有高集成高光效的热电分离功率型发光二极体，其特征在于：所述发光二极体晶片(32)包括并联每组由至少二个相串联的小功率晶片串高集成封装方式构成。 
3.根据权利要求1所述一种具有高集成高光效的热电分离功率型发光二极体，其特征在于：每组相串联的小功率晶片的为二～六个，由二至六组小功率晶片串相并联构成。 
4.根据权利要求1所述一种具有高集成高光效的热电分离功率型发光二极体，其特征在于：所述凹杯(31a)呈倒锥形，其锥角为55～65度。 
5.根据权利要求1所述一种具有高集成高光效的热电分离功率型发光二极体，其特征在于：所述导电通道(31b、31c)相互对称设置。 
6.根据权利要求1所述的一种具有高集成高光效的热电分离功率型发光二极体，其特征在于：所述支架(31)为方形贴片。 
7.根据权利要求1所述的一种具有高集成高光效的热电分离功率型发光二极体，其特征在于：所述导电通道(31b、31c)和导热通道(31d)均为C194磷青铜材质的正极或负极电通道。 
CN2012201089875U 2012-03-13 2012-03-13 具有高集成高光效的热电分离功率型发光二极体 Expired - Fee Related CN202712254U (zh)

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CN102646673A (zh) * 2012-03-13 2012-08-22 广东奥其斯科技有限公司 高集成高光效的热电分离功率型发光二极体及封装方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102646673A (zh) * 2012-03-13 2012-08-22 广东奥其斯科技有限公司 高集成高光效的热电分离功率型发光二极体及封装方法

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