CN202663304U - High-voltage electric field generation device - Google Patents
High-voltage electric field generation device Download PDFInfo
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- CN202663304U CN202663304U CN 201220155482 CN201220155482U CN202663304U CN 202663304 U CN202663304 U CN 202663304U CN 201220155482 CN201220155482 CN 201220155482 CN 201220155482 U CN201220155482 U CN 201220155482U CN 202663304 U CN202663304 U CN 202663304U
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- 230000005684 electric field Effects 0.000 title claims abstract description 19
- 239000003990 capacitor Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000000087 stabilizing effect Effects 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 3
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 102000002322 Egg Proteins Human genes 0.000 description 1
- 108010000912 Egg Proteins Proteins 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 210000004681 ovum Anatomy 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The utility model discloses a high-voltage electric field generation device. The device comprises a power supply, a switch circuit, a boosting transformer and a voltage-doubling circuit. The device disclosed by the utility model has the advantages of being small in volume, convenient to carry, and stable in electric field, and the power supply of the device may be a direct-current 12 V power supply. The main voltage doubler adopts high-voltage arrayed capacitors, so that the volume is reduced by half compared with the common voltage doubler composed of discrete capacitors, and a larger space is obtained in an insulation aspect.
Description
Technical field
The utility model relates to a kind of power equipment, especially a kind of High Voltage electric field generation device.
Background technology
The High Voltage electric field generation device is widely used in biotechnology, agricultural, and the fields such as chemical industry, but existing High Voltage electric field arrangement usually is that volume is large, and field operation is inconvenient, and power consumption is high, and is not portable, and insulation effect is not obvious.
Summary of the invention
The purpose of this utility model is to provide a kind of High Voltage electric field generation device, and this device volume is little easy to carry, and electric field is stable, and his power supply can be direct current 12V power supply.
The technical solution of the utility model is: a kind of High Voltage electric field generation device, this device comprise power supply, switching circuit, step-up transformer, reach voltage-multiplying circuit; Power supply is to provide power supply by the lead acid accumulator with 12v; Switching circuit comprises from recovering insurance R4, capacitor C 3, C6, C7, inductance L 1, optocoupler U1, resistance R 5, R6, R7, R8, R9, R15, R16, R17, metal-oxide-semiconductor Q1, Q2, diode D2, D3, D4; From the positive pole that recovers insurance R4, capacitor C 7, inductance L 1 series connection and receive power supply, resistance R 15 is linked in 1 pin of optocoupler U1 through positive sources; One terminates to ground behind the capacitor C 3 parallel resistance R16, and the other end is received 2 pin of U1; 4 pin of optocoupler U1 are connected to diode D4 negative pole, and diode D4 positive pole is connected to the positive pole behind the power filter; Resistance R 5 is parallel in 3 pin and 4 pin of optocoupler U1, and the 3 pin contact resistance R6 noise reductions of optocoupler U1 obtain stable power drives; Resistance R 7, R8 also are connected to resistance R 6, and voltage stabilizing didoe D2 is parallel to grid and the source electrode of metal-oxide-semiconductor Q1, and positive pole is connected to ground, and negative pole is linked into resistance R 8; The drain electrode of metal-oxide-semiconductor Q1 is connected in 4 pin of T1 of step-up transformer, and 5 pin of the T1 by step-up transformer are connected with inductance L 1; Voltage stabilizing didoe D3 is parallel to grid and the source electrode of metal-oxide-semiconductor Q2, positive pole is connected to ground, and negative pole is received resistance R 9, and R9 is connected to the ground by R17, the drain electrode of metal-oxide-semiconductor Q2 is connected in 7 pin of T1 of step-up transformer, and T1 the 6th pin by step-up transformer is connected with inductance L 1; T1 the 3rd pin of step-up transformer, the 8th pin are received respectively resistance R 7, R17 and are consisted of the loop and form feedback voltage, the positive and negative that the 4th pin, the 7th pin shunt capacitance C6, the 10th pin and the 1st pin are linked into respectively voltage-multiplying circuit extremely in.Step-up transformer has centre tap, and tap both sides coil turn is identical, high-tension transformer high compression ring epoxy resin embedding.Electric capacity in the voltage-multiplying circuit takes high pressure to hold, with high-voltage epoxy resin vacuum encapsulation.
The utility model has the advantage of: this device volume is little easy to carry, and electric field is stable, and his power supply can be direct current 12V power supply.Topmost multiplication of voltage adopts high pressure to hold, and the multiplication of voltage that just forms than common discrete capacitor on the volume is like this lacked general, in insulation larger space is just arranged.
Description of drawings
Fig. 1 is a kind of High Voltage electric field generation device of the utility model circuit diagram;
Fig. 2 is a kind of High Voltage electric field generation device of the utility model voltage-multiplying circuit figure.
Embodiment
A kind of High Voltage electric field generation device is to adopt 1 as power supply, utilize electronic circuit 2 low-voltage DC to be reverse into the alternating current of high frequency, boost 3 by high-tension transformer again, after reaching certain voltage, the multiplication of voltage 4 of again output voltage being carried out different progression is boosted, and so just can arrive the High Voltage electric field that needs.The wide model of High Voltage electric field that produces is used for disinfection of indoor air (ozone of high pressure ionization, anion etc.), and dedusting is directly killed insect pest with highfield, worm's ovum, and worm etc.Electronic circuit 2 is by filter capacitor C7 inductance L 1; from recovering insurance R4 circuit is carried out filtering and current-limiting protection; by resistance R 15; R16; R5 capacitor C 3; diode D4 is linked into respectively optocoupler U1, and circuit is carried out the photoelectricity isolation; prevent that height from pushing back in the circuit that channels to the back; so that metal-oxide-semiconductor obtains stable cut-in voltage, electric current is by R7, the noise reduction of R8; parallel voltage-stabilizing diode D2 is so that the grid of NMOS pipe Q1 has stable voltage; NMOS pipe Q1 conducting then has in transformer moment to produce very large electric current, and magnetic core moment also produces very strong changing magnetic field; produced a feedback voltage by the transformer self-induction thus; but with 12V supply voltage opposite direction, be-12V, by the principle of stacking of circuit; then the voltage at the grid place of NMOS pipe Q1 is 0V, so NMOS pipe Q1 closes.And this moment another road NMOS pipe Q2 grid, by resistance R 17, the dividing potential drop of R9, by feedback voltage so that its conducting.Moment produces reverse large electric current.The variation of electric current (magnetic flux), T1 level by step-up transformer produces the High Level AC Voltage that needs.
A kind of High Voltage electric field generation device, this device comprise power supply 1, switching circuit 2, step-up transformer 3, reach voltage-multiplying circuit 4; Power supply 1 is to provide power supply by the lead acid accumulator with 12v; Switching circuit 2 comprises from recovering insurance R4, capacitor C 3, C6, C7, inductance L 1, optocoupler U1, resistance R 5, R6, R7, R8, R9, R15, R16, R17, metal-oxide-semiconductor Q1, Q2; From the positive pole that recovers insurance R4, capacitor C 7, inductance L 1 series connection and receive power supply, resistance R 15 is linked in 1 pin of optocoupler U1 through positive sources; One terminates to ground behind the capacitor C 3 parallel resistance R16, and the other end is received 2 pin of U1; 4 pin of optocoupler U1 are connected with diode D4 negative pole, and diode D4 positive pole is connected to the positive pole behind the power filter; Resistance R 5 is parallel in 3 pin and 4 pin of optocoupler U1, and the 3 pin contact resistance R6 noise reductions of optocoupler U1 obtain stable power drives; Resistance R 7, R8 also are connected to resistance R 6, and voltage stabilizing didoe D2 is parallel to grid and the source electrode of metal-oxide-semiconductor Q1, and positive pole is connected to ground, and negative pole is linked into resistance R 8; The drain electrode of metal-oxide-semiconductor Q1 is connected in 4 pin of T1 of step-up transformer (3), and 5 pin of the T1 by step-up transformer are connected with inductance L 1; Voltage stabilizing didoe D3 is parallel to grid and the source electrode of metal-oxide-semiconductor Q2, positive pole is connected to ground, and negative pole is received resistance R 9, and R9 is connected to the ground by R17, the drain electrode of metal-oxide-semiconductor Q2 is connected in 7 pin of T1 of step-up transformer 3, and T1 the 6th pin by step-up transformer (3) is connected with inductance L 1; T1 the 3rd pin of step-up transformer 3, the 8th pin is received respectively resistance R 7, R17 consists of the loop and forms feedback voltage, the 4th pin, the 7th pin shunt capacitance C6, the positive and negative that the 10th pin and the 1st pin are linked into respectively voltage-multiplying circuit 4 extremely in, after accessing stable power supply, NMOS pipe Q1 conducting, then have at the very large electric current of transformer moment generation, magnetic core moment also produces very strong changing magnetic field, produced a feedback voltage by the transformer self-induction thus, but with 12V supply voltage opposite direction, be-12V, by the principle of stacking of circuit, then the voltage at the grid place of NMOS pipe Q1 is 0V, so NMOS pipe Q1 closes.And this moment another road NMOS pipe Q2 grid, by resistance R 17, the dividing potential drop of R9, by feedback voltage so that its conducting.Moment produces reverse large electric current.The variation of electric current (magnetic flux) by T1 level of step-up transformer, produces the High Level AC Voltage that needs.
Step-up transformer 3 has centre tap, and tap both sides coil turn is identical, in order to prevent striking sparks between the coil, high-tension transformer high compression ring epoxy resin embedding.Electric capacity in the voltage-multiplying circuit takes high pressure to hold, so that the circuit volume is little; For preventing that interelement from striking sparks mutually, with high-voltage epoxy resin vacuum encapsulation, like this voltage-multiplying circuit install easy to carry, reduction embedding cost, coefficient of safety is higher.
Claims (2)
1. High Voltage electric field generation device is characterized in that: this device comprises power supply (1), switching circuit (2), step-up transformer (3), and voltage-multiplying circuit (4); Power supply (1) is to provide power supply by the lead acid accumulator with 12v; Switching circuit (2) comprises from recovering insurance R4, capacitor C 3, C6, C7, inductance L 1, optocoupler U1, resistance R 5, R6, R7, R8, R9, R15, R16, R17, metal-oxide-semiconductor Q1, Q2, diode D2, D3, D4; From the positive pole that recovers insurance R4, capacitor C 7, inductance L 1 series connection and receive power supply, resistance R 15 is linked in 1 pin of optocoupler U1 through positive sources; One terminates to ground behind the capacitor C 3 parallel resistance R16, and the other end is received 2 pin of U1; 4 pin of optocoupler U1 are connected to diode D4 negative pole, and diode D4 positive pole is connected to the positive pole behind the power filter; Resistance R 5 is parallel in 3 pin and 4 pin of optocoupler U1, and the 3 pin contact resistance R6 noise reductions of optocoupler U1 obtain stable power drives; Resistance R 7, R8 also are connected to resistance R 6, and voltage stabilizing didoe D2 is parallel to grid and the source electrode of metal-oxide-semiconductor Q1, and positive pole is connected to ground, and negative pole is linked into resistance R 8; The drain electrode of metal-oxide-semiconductor Q1 is connected in 4 pin of T1 of step-up transformer (3), and 5 pin of the T1 by step-up transformer are connected with inductance L 1; Voltage stabilizing didoe D3 is parallel to grid and the source electrode of metal-oxide-semiconductor Q2, positive pole is connected to ground, and negative pole is received resistance R 9, and R9 is connected to the ground by R17, the drain electrode of metal-oxide-semiconductor Q2 is connected in 7 pin of T1 of step-up transformer (3), and T1 the 6th pin by step-up transformer (3) is connected with inductance L 1; T1 the 3rd pin of step-up transformer (3), the 8th pin are received respectively resistance R 7, R17 and are consisted of the loop and form feedback voltage, the positive and negative that the 4th pin, the 7th pin shunt capacitance C6, the 10th pin and the 1st pin are linked into respectively voltage-multiplying circuit (4) extremely in.
2. described High Voltage electric field generation device according to claim 1, it is characterized in that: the electric capacity in the voltage-multiplying circuit takes high pressure to hold, with high-voltage epoxy resin vacuum encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220155482 CN202663304U (en) | 2012-04-13 | 2012-04-13 | High-voltage electric field generation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220155482 CN202663304U (en) | 2012-04-13 | 2012-04-13 | High-voltage electric field generation device |
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| Publication Number | Publication Date |
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| CN202663304U true CN202663304U (en) | 2013-01-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220155482 Expired - Fee Related CN202663304U (en) | 2012-04-13 | 2012-04-13 | High-voltage electric field generation device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103595254A (en) * | 2013-10-18 | 2014-02-19 | 上海交通大学 | Multistage direct current circuit with controllable voltage |
| WO2014110965A1 (en) * | 2013-01-17 | 2014-07-24 | 北京大风时代科技有限责任公司 | Power-type voltage-multiplying driving circuit and electric nail gun using power-type voltage-multiplying driving circuit |
| CN105050374A (en) * | 2015-08-19 | 2015-11-11 | 浪潮(北京)电子信息产业有限公司 | Capacitor array and circuit comprising same |
-
2012
- 2012-04-13 CN CN 201220155482 patent/CN202663304U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014110965A1 (en) * | 2013-01-17 | 2014-07-24 | 北京大风时代科技有限责任公司 | Power-type voltage-multiplying driving circuit and electric nail gun using power-type voltage-multiplying driving circuit |
| CN103595254A (en) * | 2013-10-18 | 2014-02-19 | 上海交通大学 | Multistage direct current circuit with controllable voltage |
| CN103595254B (en) * | 2013-10-18 | 2016-01-13 | 上海交通大学 | The multistage direct current circuit that voltage is controlled |
| CN105050374A (en) * | 2015-08-19 | 2015-11-11 | 浪潮(北京)电子信息产业有限公司 | Capacitor array and circuit comprising same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130109 Termination date: 20130413 |