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CN202548496U - Pixel array substrate - Google Patents

Pixel array substrate Download PDF

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Publication number
CN202548496U
CN202548496U CN2012201394172U CN201220139417U CN202548496U CN 202548496 U CN202548496 U CN 202548496U CN 2012201394172 U CN2012201394172 U CN 2012201394172U CN 201220139417 U CN201220139417 U CN 201220139417U CN 202548496 U CN202548496 U CN 202548496U
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pixel
electrode
array substrate
pixel array
picture element
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周焕庭
陈盈惠
冲田雅也
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Hdt Co ltd
Chunghwa Picture Tubes Ltd
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Chunghwa Picture Tubes Ltd
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Abstract

本实用新型公开了一种画素阵列基板,包括一基板、多条扫描线、多条数据线、多条共享线、多个画素单元与多个遮蔽电极。扫描线、数据线与共享线均配置在基板上。所述数据线与所述扫描线交错,以在基板的平面上划分出多个画素区域。各个画素单元配置在其中一个画素区域内,并包括一画素电极。各个画素电极具有一第一侧边缘,而位于相邻二条扫描线之间的所述第一侧边缘均面向其中一条扫描线。所述遮蔽电极分别配置在所述画素区域内,并位于所述画素电极与基板之间。各个遮蔽电极凸出于其中一个第一侧边缘,并与共享线、扫描线与数据线电性绝缘。本实用新型的画素阵列基板运作时,能减少发生画面质量因受到耦合电容的影响而被破坏的情形。

Figure 201220139417

The utility model discloses a pixel array substrate, which includes a substrate, a plurality of scanning lines, a plurality of data lines, a plurality of shared lines, a plurality of pixel units and a plurality of shielding electrodes. Scan lines, data lines and shared lines are all configured on the substrate. The data lines intersect with the scan lines to divide a plurality of pixel areas on the plane of the substrate. Each pixel unit is configured in one of the pixel areas and includes a pixel electrode. Each pixel electrode has a first side edge, and the first side edge located between two adjacent scan lines faces one of the scan lines. The shielding electrodes are respectively arranged in the pixel areas and located between the pixel electrodes and the substrate. Each shielding electrode protrudes from one of the first side edges and is electrically insulated from the sharing line, the scan line and the data line. When the pixel array substrate of the present invention is in operation, the picture quality can be reduced from being damaged due to the influence of the coupling capacitance.

Figure 201220139417

Description

画素阵列基板Pixel Array Substrate

技术领域 technical field

 本实用新型是有关于一种显示器的元件,且特别是有关于一种画素阵列基板(pixel array substrate)。 The utility model relates to a display element, and in particular to a pixel array substrate.

背景技术 Background technique

目前有些大尺寸或高分辨率的液晶显示器(Liquid Crystal Display, LCD)具有大量的扫描线(scan line),而这类型的液晶显示器在运作时会一次驱动多条相邻的扫描线,以开启多个薄膜晶体管(Thin-Film Transistor, TFT)。这样能增加各个画素电极(pixel electrode)所对应的液晶电容(liquid crystal capacitance)的充电时间,进而减少发生液晶电容充电不足的情形。 At present, some large-size or high-resolution liquid crystal displays (Liquid Crystal Display, LCD) have a large number of scan lines (scan lines), and this type of liquid crystal display will drive multiple adjacent scan lines at a time to turn on Multiple thin-film transistors (Thin-Film Transistor, TFT). This can increase the charging time of the liquid crystal capacitance (liquid crystal capacitance) corresponding to each pixel electrode (pixel electrode), thereby reducing the occurrence of insufficient charging of the liquid crystal capacitance.

在上述液晶显示器中,各个画素电极以及与其相邻的扫描线二者会形成耦合电容,而所述耦合电容会影响画素电极所产生的灰阶电压。当液晶显示器运作时,一些扫描线会被驱动,以使一些画素电极产生灰阶电压来对液晶电容充电。然而,此时,仍有其它扫描线未被驱动,所以所述耦合电容所存有的电荷量并不一致。这可能会造成画素电极所产生错误的灰阶电压,破坏液晶显示器的画面质量。 In the above-mentioned liquid crystal display, each pixel electrode and its adjacent scanning lines will form a coupling capacitance, and the coupling capacitance will affect the gray scale voltage generated by the pixel electrode. When the liquid crystal display is in operation, some scan lines are driven to make some pixel electrodes generate grayscale voltages to charge the liquid crystal capacitors. However, at this time, there are still other scan lines that are not driven, so the amount of charges stored in the coupling capacitors is inconsistent. This may cause wrong grayscale voltages generated by the pixel electrodes, which may damage the picture quality of the LCD.

实用新型内容 Utility model content

有鉴于此,本实用新型的主要目的在于提供一种能降低耦合电容对灰阶电压的影响的画素阵列基板。 In view of this, the main purpose of the present invention is to provide a pixel array substrate that can reduce the influence of the coupling capacitance on the gray scale voltage.

为达到上述目的,本实用新型提出一种画素阵列基板,其包括一基板、多条扫描线、多条数据线、多条共享线、多个画素单元、一绝缘层以及多个遮蔽电极。基板具有一平面。所述扫描线彼此并列,并配置在该平面上;而所述数据线彼此并列,并配置在该平面上;所述数据线与所述扫描线交错,在平面上划分出多个画素区域。所述共享线与所述扫描线并列,并配置在平面上。各个画素单元配置在其中一个画素区域内,各画素单元并包括一画素开关、一画素电极以及一导电柱。所述画素开关电性连接所述扫描线与所述数据线。所述导电柱连接在所述画素开关与所述画素电极之间,其中各个画素电极具有一第一侧边缘,而位于相邻二条扫描线之间的所述第一侧边缘均面向其中一条扫描线。绝缘层配置在所述画素电极与平面之间,并覆盖所述扫描线、所述数据线、所述共享线以及所述画素开关。所述导电柱配置在绝缘层中。所述遮蔽电极分别配置在所述画素区域内,并位于所述画素电极与平面之间。所述遮蔽电极分别与所述画素电极部分重叠,其中各个遮蔽电极凸出于其中一个第一侧边缘,且所述遮蔽电极均与所述共享线、所述扫描线以及所述数据线电性绝缘。 To achieve the above purpose, the present invention proposes a pixel array substrate, which includes a substrate, multiple scanning lines, multiple data lines, multiple sharing lines, multiple pixel units, an insulating layer and multiple shielding electrodes. The substrate has a plane. The scan lines are juxtaposed with each other and arranged on the plane; the data lines are juxtaposed with each other and arranged on the plane; the data lines and the scan lines are interlaced to divide a plurality of pixel regions on the plane. The sharing line is juxtaposed with the scanning line and arranged on a plane. Each pixel unit is arranged in one of the pixel areas, and each pixel unit includes a pixel switch, a pixel electrode and a conductive column. The pixel switch is electrically connected to the scan line and the data line. The conductive column is connected between the pixel switch and the pixel electrode, wherein each pixel electrode has a first side edge, and the first side edge between two adjacent scanning lines faces one of the scanning lines. Wire. The insulation layer is arranged between the pixel electrode and the plane, and covers the scanning line, the data line, the sharing line and the pixel switch. The conductive column is configured in the insulating layer. The shielding electrodes are respectively arranged in the pixel regions and located between the pixel electrodes and the plane. The shielding electrodes partially overlap with the pixel electrodes respectively, wherein each shielding electrode protrudes from one of the first side edges, and the shielding electrodes are electrically connected to the sharing line, the scanning line and the data line. insulation.

在本实用新型一实施例中,上述画素阵列基板更包括一保护层。保护层配置在平面与绝缘层之间,并覆盖所述扫描线与所述共享线,其中所述遮蔽电极配置在保护层与绝缘层之间。 In an embodiment of the present invention, the pixel array substrate further includes a protection layer. The protective layer is disposed between the plane and the insulating layer, and covers the scanning line and the sharing line, wherein the shielding electrode is disposed between the protective layer and the insulating layer.

在本实用新型一实施例中,各个画素区域内的遮蔽电极的数量为一个。 In an embodiment of the present invention, the number of shielding electrodes in each pixel area is one.

在本实用新型一实施例中,各个画素区域内的遮蔽电极的数量为多个。 In an embodiment of the present invention, the number of shielding electrodes in each pixel area is multiple.

在本实用新型一实施例中,各个画素电极更具有一对彼此相对的第二侧边缘,而第一侧边缘连接在该两个第二侧边缘之间。同一画素区域内的其中一个遮蔽电极凸出于该两个第二侧边缘。 In an embodiment of the present invention, each pixel electrode further has a pair of second side edges opposite to each other, and the first side edge is connected between the two second side edges. One of the shielding electrodes in the same pixel area protrudes from the two second side edges.

在本实用新型一实施例中,上述画素阵列基板更包括多个电容电极。所述电容电极分别配置在所述画素区域内,并连接所述共享线。绝缘层更覆盖所述电容电极,而各个电容电极与其中一个画素电极部分重叠。 In an embodiment of the present invention, the pixel array substrate further includes a plurality of capacitive electrodes. The capacitive electrodes are respectively arranged in the pixel area and connected to the sharing line. The insulating layer further covers the capacitive electrodes, and each capacitive electrode partially overlaps with one of the pixel electrodes.

在本实用新型一实施例中,各个画素电极更具有一对彼此相对的第二侧边缘,而第一侧边缘连接在该两个第二侧边缘之间。各个电容电极凸出于其中一个第二侧边缘。 In an embodiment of the present invention, each pixel electrode further has a pair of second side edges opposite to each other, and the first side edge is connected between the two second side edges. Each capacitor electrode protrudes from one of the second side edges.

在本实用新型一实施例中,各个画素区域内的电容电极的数量为多个。 In an embodiment of the present invention, there are multiple capacitive electrodes in each pixel area.

在本实用新型一实施例中,各条共享线具有相对二侧边,而所述电容电极凸出于所述共享线的其中一个侧边。 In an embodiment of the present invention, each sharing line has two opposite sides, and the capacitor electrode protrudes from one side of the sharing line.

在本实用新型一实施例中,上述各条共享线具有相对二侧边,而所述电容电极凸出于所述共享线的所述侧边。 In an embodiment of the present invention, each of the sharing lines has two opposite sides, and the capacitor electrode protrudes from the sides of the sharing line.

在本实用新型一实施例中,各个画素区域内的遮蔽电极的数量为多个。在同一个画素区域中,电容电极位于所述遮蔽电极之间。 In an embodiment of the present invention, the number of shielding electrodes in each pixel area is multiple. In the same pixel area, the capacitive electrodes are located between the shielding electrodes.

在本实用新型一实施例中,各个画素电极更具有一对彼此相对的第二侧边缘,而第一侧边缘连接在该两个第二侧边缘之间。所述遮蔽电极的形状均为环形,且各个遮蔽电极凸出于其中一个画素电极的第一侧边缘与该两个第二侧边缘。 In an embodiment of the present invention, each pixel electrode further has a pair of second side edges opposite to each other, and the first side edge is connected between the two second side edges. The shapes of the shielding electrodes are ring-shaped, and each shielding electrode protrudes from the first side edge and the two second side edges of one of the pixel electrodes.

基于上述,当本实用新型的画素阵列基板运作时,所述遮蔽电极能产生电场屏蔽效应(electric field shielding effect),进而能降低画素电极与扫描线二者所形成的耦合电容对灰阶电压的影响,以减少发生画面质量因受到耦合电容的影响而被破坏的情形。 Based on the above, when the pixel array substrate of the present invention is in operation, the shielding electrode can generate an electric field shielding effect, thereby reducing the effect of the coupling capacitance formed by the pixel electrode and the scanning line on the gray scale voltage. In order to reduce the situation that the picture quality is damaged due to the influence of the coupling capacitance.

附图说明 Description of drawings

图1A是本实用新型一实施例的画素阵列基板的俯视示意图; FIG. 1A is a schematic top view of a pixel array substrate according to an embodiment of the present invention;

图1B是沿图1A中I-I线剖面所绘制的剖面示意图; Fig. 1B is a schematic sectional view drawn along the I-I line section in Fig. 1A;

图2是本实用新型另一实施例的画素阵列基板的俯视示意图; 2 is a schematic top view of a pixel array substrate according to another embodiment of the present invention;

图3是本实用新型又一实施例的画素阵列基板的俯视示意图。 FIG. 3 is a schematic top view of a pixel array substrate according to another embodiment of the present invention.

附图标记说明 Explanation of reference signs

100、200、300  画素阵列基板 100, 200, 300 pixel array substrate

110    基板 110 Substrate

112    平面 112 plane

120c  共享线 120c shared line

120d  数据线 120d data cable

120s  扫描线 120s scan line

130    画素单元 130 pixel units

132    画素开关 132 pixel switch

134    画素电极 134 pixel electrodes

136    导电柱 136 conductive column

140    绝缘层 140 insulation layer

150、350      遮蔽电极 150, 350 shaded electrodes

160    保护层 160 layers of protection

170、270      电容电极 170, 270 Capacitive electrodes

C1     通道层 C1 channel layer

D1     漏极 D1 drain

E1     第一侧边缘 E1 first side edge

E2     第二侧边缘 E2 Second side edge

E3     侧边 E3 side

G1     栅极 G1 Gate

P1     画素区域 P1 pixel area

S1     源极。 S1 source.

具体实施方式 Detailed ways

为让本实用新型的上述特征和优点能更明显易懂,下文特举实施例,并配合所附附图,作详细说明如下。 In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific examples are given together with the accompanying drawings and described in detail as follows.

图1A是本实用新型一实施例的画素阵列基板的俯视示意图,而图1B是沿图1A中I-I线剖面所绘制的剖面示意图。请参阅图1A与图1B,本实施例的画素阵列基板100包括一基板110、多条扫描线120s、多条数据线120d以及多条共享线120c。基板110具有一平面112,而所述扫描线120s、数据线120d与共享线120c均配置在平面112上。 FIG. 1A is a schematic top view of a pixel array substrate according to an embodiment of the present invention, and FIG. 1B is a schematic cross-sectional view drawn along line I-I in FIG. 1A . Please refer to FIG. 1A and FIG. 1B , the pixel array substrate 100 of this embodiment includes a substrate 110 , a plurality of scanning lines 120s, a plurality of data lines 120d and a plurality of sharing lines 120c. The substrate 110 has a plane 112 , and the scan lines 120s , data lines 120d and sharing lines 120c are all disposed on the plane 112 .

所述数据线120d彼此并列,而所述扫描线120s彼此并列,其中所述数据线120d与所述扫描线120s交错,以在平面112上划分出多个画素区域P1。详细而言,所述数据线120d与所述扫描线120s呈网状排列,从而形成多个网格(lattice),其中网格为画素区域P1,如图1A所示。 The data lines 120d are juxtaposed with each other, and the scan lines 120s are juxtaposed with each other, wherein the data lines 120d and the scan lines 120s are interlaced to divide a plurality of pixel regions P1 on the plane 112 . In detail, the data lines 120d and the scan lines 120s are arranged in a grid, thereby forming a plurality of lattices, wherein the lattices are pixel regions P1, as shown in FIG. 1A .

所述共享线120c与所述扫描线120s并列,而各条扫描线120s可以位于相邻二条共享线120c之间,所以共享线120c可以穿过多个画素区域P1。此外,共享线120c与扫描线120s二者可以是由同一层膜层制作而成。举例而言,共享线120c与扫描线120s二者可以是由同一层金属层经微影(photolithography)及蚀刻(etching)后而形成。因此,构成共享线120c与扫描线120s二者的材料均可相同。 The sharing line 120c is parallel to the scanning line 120s, and each scanning line 120s may be located between two adjacent sharing lines 120c, so the sharing line 120c may pass through a plurality of pixel regions P1. In addition, both the sharing line 120c and the scanning line 120s may be made of the same film layer. For example, both the sharing line 120c and the scanning line 120s can be formed by the same metal layer after photolithography and etching. Therefore, the materials constituting both the sharing line 120c and the scanning line 120s can be the same.

画素阵列基板100更包括多个画素单元130与一绝缘层140(如图1B所示)。各个画素单元130配置在其中一个画素区域P1内,并包括一画素开关132、一画素电极134与一导电柱136。绝缘层140配置在所述画素电极134与平面112之间,并覆盖扫描线120s、数据线120d、共享线120c以及画素开关132,而共享线120c与画素电极134部分重叠,如图1A所示。所述导电柱136配置在绝缘层140中,并连接在所述画素开关132与所述画素电极134之间,以使画素开关132电性连接画素电极134。 The pixel array substrate 100 further includes a plurality of pixel units 130 and an insulating layer 140 (as shown in FIG. 1B ). Each pixel unit 130 is disposed in one of the pixel regions P1 and includes a pixel switch 132 , a pixel electrode 134 and a conductive column 136 . The insulating layer 140 is disposed between the pixel electrode 134 and the plane 112, and covers the scanning line 120s, the data line 120d, the sharing line 120c and the pixel switch 132, and the sharing line 120c partially overlaps the pixel electrode 134, as shown in FIG. 1A . The conductive column 136 is disposed in the insulating layer 140 and connected between the pixel switch 132 and the pixel electrode 134 so that the pixel switch 132 is electrically connected to the pixel electrode 134 .

所述画素开关132电性连接所述扫描线120s与所述数据线120d。详细而言,各个画素开关132可以是场效晶体管(Field-Effect Transistor, FET),并且可以包括一源极S1、一漏极D1、一栅极G1以及一通道层C1,其中源极S1、漏极D1与通道层C1均位于栅极G1的上方,而通道层C1位于栅极G1与源极S1之间,以与栅极G1与漏极D1之间。此外,通道层C1可以是一种半导体层。 The pixel switch 132 is electrically connected to the scan line 120s and the data line 120d. In detail, each pixel switch 132 may be a field-effect transistor (Field-Effect Transistor, FET), and may include a source S1, a drain D1, a gate G1, and a channel layer C1, wherein the source S1, Both the drain D1 and the channel layer C1 are located above the gate G1 , and the channel layer C1 is located between the gate G1 and the source S1 , and between the gate G1 and the drain D1 . In addition, the channel layer C1 may be a semiconductor layer.

在同一个画素单元130中,栅极G1连接扫描线120s,并且可以与扫描线120s一体成型。详细而言,栅极G1与扫描线120s二者可由同一层膜层制作而成,例如栅极G1与扫描线120s二者可由同一层金属层经微影及蚀刻后而形成。源极S1连接数据线120d,而漏极D1连接导电柱136。 In the same pixel unit 130, the gate G1 is connected to the scan line 120s, and can be integrally formed with the scan line 120s. In detail, both the gate G1 and the scan line 120s can be made of the same film layer, for example, both the gate G1 and the scan line 120s can be formed by the same metal layer after lithography and etching. The source S1 is connected to the data line 120d, and the drain D1 is connected to the conductive pillar 136 .

当多条扫描线120s驱动时,已驱动的扫描线120s所电性连接的多个画素开关132会被开启。此时,数据线120d所输出的灰阶信号会输入至所述已开启的画素开关132的源极S1,并且依序经过通道层C1、漏极D1与导电柱136。之后,灰阶信号传递至画素电极134,从而产生灰阶电压。 When the scan lines 120s are driven, the pixel switches 132 electrically connected to the driven scan lines 120s are turned on. At this time, the grayscale signal output by the data line 120d is input to the source S1 of the turned-on pixel switch 132 , and passes through the channel layer C1 , the drain D1 and the conductive column 136 in sequence. Afterwards, the grayscale signal is transmitted to the pixel electrode 134 to generate a grayscale voltage.

画素阵列基板100更包括多个遮蔽电极150,其中所述遮蔽电极150分别配置在所述画素区域P1内,并且位于所述画素电极134与平面112之间(如图1B所示)。此外,在图1A所示的实施例中,各个画素区域P1内的遮蔽电极150的数量可以仅为一个。 The pixel array substrate 100 further includes a plurality of shielding electrodes 150 , wherein the shielding electrodes 150 are respectively disposed in the pixel region P1 and located between the pixel electrodes 134 and the plane 112 (as shown in FIG. 1B ). In addition, in the embodiment shown in FIG. 1A , the number of the shielding electrode 150 in each pixel region P1 may be only one.

所述遮蔽电极150分别与所述画素电极134部分重叠。各个画素电极134具有一第一侧边缘E1以及一对彼此相对的第二侧边缘E2。在各个画素电极134中,第一侧边缘E1连接在所述第二侧边缘E2之间,而各个遮蔽电极150凸出于其中一个第一侧边缘E1。 The shielding electrodes 150 partially overlap with the pixel electrodes 134 respectively. Each pixel electrode 134 has a first side edge E1 and a pair of second side edges E2 opposite to each other. In each pixel electrode 134 , the first side edge E1 is connected between the second side edges E2 , and each shielding electrode 150 protrudes from one of the first side edges E1 .

所述遮蔽电极150均与所述共享线120c、所述扫描线120s以及所述数据线120d电性绝缘,而位于相邻二条扫描线120s之间的所述第一侧边缘E1均会面向其中一条扫描线120s,所以遮蔽电极150会配置在其中一条扫描线120s与其中一个画素电极134之间。 The shielding electrodes 150 are electrically insulated from the sharing line 120c, the scanning line 120s and the data line 120d, and the first side edge E1 between two adjacent scanning lines 120s faces therein. One scanning line 120s, so the shielding electrode 150 is disposed between one of the scanning lines 120s and one of the pixel electrodes 134 .

画素电极134以及其第一侧边缘E1所面向的扫描线120s二者会形成影响灰阶电压的耦合电容,但是遮蔽电极150能在耦合电容中产生电场屏蔽效应,进而降低上述耦合电容对灰阶电压的影响,促使画素电极134产生合适的灰阶电压,以减少发生画面质量因受到耦合电容的影响而被破坏的情形。 Both the pixel electrode 134 and the scanning line 120s facing the first side edge E1 will form a coupling capacitance that affects the gray scale voltage, but the shielding electrode 150 can generate an electric field shielding effect in the coupling capacitance, thereby reducing the impact of the above coupling capacitance on the gray scale voltage. The influence of the voltage prompts the pixel electrode 134 to generate a suitable grayscale voltage, so as to reduce the situation that the picture quality is damaged due to the influence of the coupling capacitance.

另外,画素阵列基板100可以更包括一保护层160,如图1B所示。保护层160配置在平面112与绝缘层140之间,并且覆盖所述扫描线120s与所述共享线120c,而所述遮蔽电极150与所述画素开关132的源极S1及漏极D1均可配置在保护层160与绝缘层140之间。遮蔽电极150、源极S1与漏极D1三者可以是由同一层膜层制作而成,例如是由同一层金属层经微影及蚀刻后而形成,因此构成遮蔽电极150、源极S1与漏极D1三者的材料均可相同。 In addition, the pixel array substrate 100 may further include a protection layer 160, as shown in FIG. 1B. The protective layer 160 is disposed between the plane 112 and the insulating layer 140, and covers the scanning line 120s and the sharing line 120c, and the shielding electrode 150 and the source S1 and the drain D1 of the pixel switch 132 can be It is disposed between the protective layer 160 and the insulating layer 140 . The shielding electrode 150, the source S1 and the drain D1 can be made of the same film layer, for example, the same metal layer is formed by lithography and etching, thus forming the shielding electrode 150, the source S1 and the drain D1. The materials of the three drains D1 may be the same.

在本实施例中,画素阵列基板100可以更包括多个电容电极170,其中所述电容电极170分别配置在所述画素区域P1内,而各个画素区域P1内的电容电极170的数量可为多个。以图1A为例,各个画素区域P1内的电容电极170的数量为二个。此外,各个电容电极170位于画素电极134的下方,并且与画素电极134部分重叠,其中各个电容电极170凸出于其中一个第二侧边缘E2。 In this embodiment, the pixel array substrate 100 may further include a plurality of capacitive electrodes 170, wherein the capacitive electrodes 170 are respectively arranged in the pixel region P1, and the number of capacitive electrodes 170 in each pixel region P1 may be as many as indivual. Taking FIG. 1A as an example, there are two capacitive electrodes 170 in each pixel area P1. In addition, each capacitive electrode 170 is located below the pixel electrode 134 and partially overlaps the pixel electrode 134 , wherein each capacitive electrode 170 protrudes from one of the second side edges E2 .

所述电容电极170可以配置在平面112上,而电容电极170与共享线120c二者可由同一层膜层制作而成。举例而言,电容电极170与共享线120c二者可以是由同一层金属层经微影及蚀刻后而形成,因此构成电容电极170与共享线120c二者的材料均可以相同,而绝缘层140更覆盖所述电容电极170。此外,由于扫描线120s与共享线120c二者可由同一层膜层制作而成,因此电容电极170、扫描线120s与共享线120c三者更可由同一层膜层制作而成。 The capacitive electrode 170 may be disposed on the plane 112, and the capacitive electrode 170 and the sharing line 120c may be made of the same film layer. For example, both the capacitive electrode 170 and the sharing line 120c can be formed by the same metal layer after lithography and etching, so the materials constituting the capacitive electrode 170 and the sharing line 120c can be the same, and the insulating layer 140 It further covers the capacitive electrode 170 . In addition, since the scanning line 120s and the sharing line 120c can be made of the same film layer, the capacitive electrode 170 , the scanning line 120s and the sharing line 120c can be made of the same film layer.

所述电容电极170连接所述共享线120c,以使电容电极170与其所连接的共享线120c电性导通。在图1A所示的实施例中,各条共享线120c具有相对二侧边E3,而所述电容电极170凸出于所述共享线120c的其中一个侧边E3。换句话说,在同一条共享线120c中,多个电容电极170只连接其中一个侧边E3,而不连接另一个侧边E3。 The capacitor electrode 170 is connected to the sharing line 120c, so that the capacitor electrode 170 is electrically connected to the sharing line 120c to which it is connected. In the embodiment shown in FIG. 1A, each sharing line 120c has two opposite sides E3, and the capacitor electrode 170 protrudes from one side E3 of the sharing line 120c. In other words, in the same shared line 120c, the plurality of capacitive electrodes 170 are only connected to one side E3, but not to the other side E3.

由于共享线120c及电容电极170均与画素电极134重叠,因此同一画素区域P1内的共享线120c、电容电极170与画素电极134三者能形成一种用于维持灰阶电压的储存电容(storage capacitances,又称Cst)。此外,上述储存电容可以是架构在共享在线的储存电容(Cst on common)。 Since the sharing line 120c and the capacitor electrode 170 overlap the pixel electrode 134, the sharing line 120c, the capacitor electrode 170 and the pixel electrode 134 in the same pixel region P1 can form a storage capacitor (storage) for maintaining the gray scale voltage. capacities, also known as Cst). In addition, the above-mentioned storage capacitor may be a storage capacitor (Cs on common) configured on a shared line.

图2是本实用新型另一实施例的画素阵列基板的俯视示意图。请参阅图2,本实施例的画素阵列基板200与画素阵列基板100二者结构相似,功效相同,例如画素阵列基板200也包括扫描线120s、数据线120d、共享线120c与画素单元130等元件,且画素阵列基板200、100二者的剖面结构极为相似。因此,以下将主要介绍画素阵列基板100、200二者的差异,并仅配合图2来进行详细的说明,不再重复介绍二者相同的技术特征及功效。 FIG. 2 is a schematic top view of a pixel array substrate according to another embodiment of the present invention. Please refer to FIG. 2, the pixel array substrate 200 of this embodiment is similar in structure to the pixel array substrate 100, and has the same effect. For example, the pixel array substrate 200 also includes elements such as scanning lines 120s, data lines 120d, sharing lines 120c, and pixel units 130. , and the cross-sectional structures of the pixel array substrates 200 and 100 are very similar. Therefore, the following will mainly introduce the differences between the pixel array substrates 100 and 200 , and only describe in detail with reference to FIG. 2 , and will not repeat the same technical features and functions.

画素阵列基板100、200二者的差异包括各个画素区域P1内的遮蔽电极150的数量,以及画素阵列基板200所包括的多个电容电极270与多条共享线120c二者之间的连接方式。详细而言,在本实施例中,各个画素区域P1内的遮蔽电极150的数量为多个,而在同一画素区域P1内,其中一个遮蔽电极150凸出于画素电极134的二个第二侧边缘E2,而另一个遮蔽电极150则凸出于第一侧边缘E1。 Differences between the pixel array substrates 100 and 200 include the number of shielding electrodes 150 in each pixel region P1 and the connection between the plurality of capacitive electrodes 270 and the plurality of sharing lines 120c included in the pixel array substrate 200 . In detail, in this embodiment, the number of shielding electrodes 150 in each pixel region P1 is multiple, and in the same pixel region P1, one of the shielding electrodes 150 protrudes from the two second sides of the pixel electrode 134 edge E2, and another shielding electrode 150 protrudes from the first side edge E1.

各个电容电极270位于画素电极134的下方,而且电容电极270与共享线120c二者可以是由同一层膜层制作而成。电容电极270与画素电极134部分重叠,其中各个电容电极270凸出于其中一个第二侧边缘E2。此外,在同一个画素区域P1中,所述电容电极270可以位于所述遮蔽电极150之间,如图2所示。 Each capacitive electrode 270 is located below the pixel electrode 134, and both the capacitive electrode 270 and the sharing line 120c can be made of the same film layer. The capacitor electrodes 270 partially overlap the pixel electrodes 134 , wherein each capacitor electrode 270 protrudes from one of the second side edges E2 . In addition, in the same pixel area P1, the capacitive electrode 270 may be located between the shielding electrodes 150, as shown in FIG. 2 .

电容电极270与共享线120c二者之间的连接方式不同于前述实施例中电容电极170与共享线120c二者之间的连接方式。详细而言,在本实施例中,所述电容电极270凸出于所述共享线120c的二侧边E3。也就是说,在同一条共享线120c中,一些电容电极270连接其中一个侧边E3,而另一些电容电极270连接另一个侧边E3,如图2所示。 The connection mode between the capacitor electrode 270 and the sharing line 120c is different from the connection mode between the capacitor electrode 170 and the sharing line 120c in the foregoing embodiments. In detail, in this embodiment, the capacitor electrode 270 protrudes from two sides E3 of the sharing line 120c. That is to say, in the same shared line 120c, some capacitive electrodes 270 are connected to one side E3, while other capacitive electrodes 270 are connected to the other side E3, as shown in FIG. 2 .

图3是本实用新型另一实施例的画素阵列基板的俯视示意图。请参阅图3,本实施例的画素阵列基板300与画素阵列基板100相似,例如画素阵列基板300也包括扫描线120s、数据线120d、共享线120c以及画素单元130,且画素阵列基板300、100二者的剖面结构极为相似,因此以下将主要介绍画素阵列基板100、300二者的差异,不再重复介绍二者相同的技术特征与功效,也不绘示画素阵列基板300的剖面结构,而仅配合图3来进行详细的说明。 FIG. 3 is a schematic top view of a pixel array substrate according to another embodiment of the present invention. Please refer to FIG. 3, the pixel array substrate 300 of this embodiment is similar to the pixel array substrate 100, for example, the pixel array substrate 300 also includes scanning lines 120s, data lines 120d, sharing lines 120c and pixel units 130, and the pixel array substrates 300, 100 The cross-sectional structures of the two are very similar, so the following will mainly introduce the differences between the pixel array substrates 100 and 300, and will not repeat the same technical features and functions of the two, nor will the cross-sectional structure of the pixel array substrate 300 be shown, but A detailed description will be given only in conjunction with FIG. 3 .

详细而言,画素阵列基板300、100二者的主要差异在于:画素阵列基板300所包括的多个遮蔽电极350,其形状均为环形,其中各个遮蔽电极350不仅与其中一个画素电极134部分重叠,而且凸出于画素电极134的第一侧边缘E1与二个第二侧边缘E2,如图3所示。 In detail, the main difference between the pixel array substrates 300 and 100 is that the plurality of shielding electrodes 350 included in the pixel array substrate 300 are all ring-shaped, and each shielding electrode 350 not only partially overlaps with one of the pixel electrodes 134 , and protrude from the first side edge E1 and the two second side edges E2 of the pixel electrode 134 , as shown in FIG. 3 .

另外,在图3所示的实施例中,画素阵列基板300可以不包括任何前述实施例中的电容电极170、270。不过,共享线120c仍与画素电极134部分重叠,因此即使画素阵列基板300未包括任何电容电极170、270,同一画素区域P1内的共享线120c与画素电极134二者仍可以形成用于维持灰阶电压的储存电容。 In addition, in the embodiment shown in FIG. 3 , the pixel array substrate 300 may not include any capacitive electrodes 170 , 270 in the foregoing embodiments. However, the sharing line 120c still partially overlaps the pixel electrode 134, so even if the pixel array substrate 300 does not include any capacitive electrodes 170, 270, both the sharing line 120c and the pixel electrode 134 in the same pixel region P1 can still be used to maintain gray. storage capacitor for step voltage.

综上所述,本实用新型的画素阵列基板所包括的遮蔽电极能在画素电极与扫描线二者所形成的耦合电容中产生电场屏蔽效应。如此,本实用新型能降低耦合电容对灰阶电压的影响,促使画素电极产生合适的灰阶电压,以减少发生画面质量因受到耦合电容的影响而被破坏的情形。 To sum up, the shielding electrodes included in the pixel array substrate of the present invention can generate an electric field shielding effect in the coupling capacitance formed by the pixel electrodes and the scanning lines. In this way, the utility model can reduce the influence of the coupling capacitor on the gray scale voltage, and promote the pixel electrode to generate a suitable gray scale voltage, so as to reduce the situation that the picture quality is damaged due to the influence of the coupling capacitor.

虽然本实用新型以前述实施例揭露如上,然其并非用以限定本实用新型,任何熟悉相像技术的人,在不脱离本实用新型的精神和范围内,所作更动与润饰的等效替换,仍为本实用新型的专利保护范围内。 Although the utility model is disclosed above with the foregoing embodiments, it is not intended to limit the utility model. Any person familiar with the similar technology can make equivalent replacements for changes and modifications without departing from the spirit and scope of the utility model. Still within the scope of patent protection of the utility model.

Claims (12)

1. pixel array substrate is characterized in that it comprises:
One substrate has a plane;
The multi-strip scanning line, arranged side by side each other, and be configured on this plane;
Many data lines, arranged side by side each other, and be configured on this plane, said data line and said sweep trace are staggered, on this plane, mark off a plurality of picture elements zone;
Many common lines, arranged side by side with said sweep trace, and be configured on this plane;
A plurality of picture elements unit; Respectively this picture element configuration of cells is therein in picture element zone; Each picture element unit comprises a picture element switch, a pixel electrode and a conductive pole, and said picture element switch electrically connects said sweep trace and said data line, and said conductive pole is connected between said picture element switch and the said pixel electrode; Wherein respectively this pixel electrode has a first side edge, and the said first side edge between adjacent two sweep traces is all towards sweep trace wherein;
One insulation course is configured between said pixel electrode and this plane, and covers said sweep trace, said data line, said common lines and said picture element switch, and wherein said conductive pole is configured in this insulation course; And
A plurality of shielding electrodes; Be configured in respectively in the said picture element zone; And between said pixel electrode and this plane; Said shielding electrode is overlapped with said pixel electrode respectively, and wherein respectively this shielding electrode protrudes from one of them first side edge, and said shielding electrode all is electrically insulated with said common lines, said sweep trace and said data line.
2. pixel array substrate as claimed in claim 1; It is characterized in that; This pixel array substrate more comprises a protective seam; This protective seam is configured between said plane and the said insulation course, and covers said sweep trace and common lines, and wherein said shielding electrode is configured between this protective seam and the said insulation course.
3. pixel array substrate as claimed in claim 1 is characterized in that, the quantity of the said shielding electrode in each said picture element zone is one.
4. pixel array substrate as claimed in claim 1 is characterized in that, the quantity of the said shielding electrode in each said picture element zone is a plurality of.
5. pixel array substrate as claimed in claim 4; It is characterized in that; Each said pixel electrode has more a pair of second side respect to one another edge; And said first side edge is connected between these two second side edge, and one of them shielding electrode in the same picture element zone protrudes from this two second side edge.
6. pixel array substrate as claimed in claim 1; It is characterized in that; This pixel array substrate more comprises a plurality of capacitance electrodes, and said capacitance electrode is configured in respectively in the said picture element zone, and connects said common lines; Said insulation course more covers said capacitance electrode, and respectively this capacitance electrode and one of them pixel electrode are overlapped.
7. pixel array substrate as claimed in claim 6; It is characterized in that; Each said pixel electrode has more a pair of second side respect to one another edge, and said first side edge is connected between these two second side edge, and each said capacitance electrode protrudes from one of them second side edge.
8. pixel array substrate as claimed in claim 6 is characterized in that, the quantity of the said capacitance electrode in each said picture element zone is a plurality of.
9. pixel array substrate as claimed in claim 6 is characterized in that, each said common lines has relative dual side-edge, and said capacitance electrode protrudes from one of them side of said common lines.
10. pixel array substrate as claimed in claim 6 is characterized in that, each said common lines has relative dual side-edge, and said capacitance electrode protrudes from the said side of said common lines.
11. pixel array substrate as claimed in claim 10 is characterized in that, the quantity of the said shielding electrode in each said picture element zone is a plurality of, and in same picture element zone, said capacitance electrode is between said shielding electrode.
12. pixel array substrate as claimed in claim 1; It is characterized in that; Each said pixel electrode has more a pair of second side respect to one another edge; And said first side edge is connected between these two second side edge, and the shape of said shielding electrode is annular, and each said shielding electrode protrudes from said first side edge and this two second side edge of one of them pixel electrode.
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