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CN202275863U - Quartz furnace tube used for manufacturing PN junction of crystalline silicon solar cell - Google Patents

Quartz furnace tube used for manufacturing PN junction of crystalline silicon solar cell Download PDF

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Publication number
CN202275863U
CN202275863U CN2011203798956U CN201120379895U CN202275863U CN 202275863 U CN202275863 U CN 202275863U CN 2011203798956 U CN2011203798956 U CN 2011203798956U CN 201120379895 U CN201120379895 U CN 201120379895U CN 202275863 U CN202275863 U CN 202275863U
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CN
China
Prior art keywords
quartz
quartzy
air flow
tube
internal layer
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Expired - Fee Related
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CN2011203798956U
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Chinese (zh)
Inventor
黄志林
肖剑峰
周体
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Ningbo SunEarth Solar Power Co Ltd
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Ningbo SunEarth Solar Power Co Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

本实用新型公开了一种用于制作晶体硅太阳能电池PN结的石英炉管,其为双层结构,包括外层石英管和内层气流均衡管,外层石英管内径向设置有口部石英支撑圆盘和尾部石英支撑圆盘,内层气流均衡管置放于两个石英支撑圆盘上,外层石英管和内层气流均衡管之间的环形空隙中沿轴向均匀设置有多块石英隔流板,多块石英隔流板分环形空隙为多个气流腔,内层气流均衡管上均匀分布有多个气流孔,尾部石英支撑圆盘上连接有与内层气流均衡管连通的废气排放管及与气流腔连通的工艺气体进气管,使用时工艺气体通过气流腔再经气流孔均匀沉积到硅片表面上,这种结构的石英炉管实现了对气流的控制并加以稳定,可提高硅片和整管晶硅电池扩散方阻的均匀性到±2%以内。

The utility model discloses a quartz furnace tube for making a PN junction of a crystalline silicon solar cell, which is a double-layer structure, comprising an outer layer quartz tube and an inner layer air flow equalization tube, and the outer layer quartz tube is radially provided with a mouth quartz tube The support disc and the tail quartz support disc, the inner layer air flow equalization tube is placed on the two quartz support discs, and the annular gap between the outer layer quartz tube and the inner layer air flow equalization tube is evenly arranged in the axial direction. Quartz cutoff plate, multiple quartz flow dividers divide the annular gap into multiple air flow chambers, a number of airflow holes are evenly distributed on the inner layer air flow equalization tube, and the tail quartz support disc is connected with the inner layer air flow equalization tube. The exhaust gas discharge pipe and the process gas inlet pipe connected to the air flow chamber, when in use, the process gas passes through the air flow chamber and then is evenly deposited on the surface of the silicon wafer through the air flow holes. The quartz furnace tube with this structure realizes the control and stability of the air flow. It can improve the uniformity of the diffusion resistance of silicon wafers and whole-tube crystalline silicon cells to within ±2%.

Description

A kind of Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction
Technical field
The utility model relates to a kind of solar battery diffusion technology and uses equipment, especially relates to a kind of Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction.
Background technology
Solar cell is an electric energy with solar energy converting as the emerging regenerative resource of settling accounts directly because of it has, and the life-span is long, safeguard advantage such as simple and get most of the attention that wherein the application of crystal silicon solar energy battery is the most extensive.
The critical process of making crystal silicon solar energy battery is exactly the preparation of PN junction, and the method that forms PN junction on the surface of crystalline silicon has gas phase diffusion, applies diffusion and ion implantation etc., and most of gas phase diffusion legal system that adopts is equipped with PN junction in the suitability for industrialized production at present.Because the quality of PN junction performance directly influences the quality of crystal silicon solar energy battery; Therefore just be how to ensure the uniformity of diffusion for the maximum problem of gas phase diffusion method; If when the preparation PN junction, can guarantee good diffusion uniformity; The controllability that then prepares the technological parameter in the subsequent technique of crystal silicon solar energy battery can be higher, thereby can guarantee the stability of the unit for electrical property parameters of crystal silicon solar energy battery preferably.
At present; The whole process of gas phase diffusion prepared PN junction is all accomplished in silicon chip diffusion burner hearth; And quartz ampoule is the vitals in the silicon chip diffusion burner hearth, and quartz ampoule satisfies the high temperature requirement of about 1000 ℃ of gas phase diffusion technologies, and quartz ampoule lies against in the silicon chip diffusion burner hearth during use; Laterally putting has the quartz boat of silicon cell to be positioned at quartz ampoule; The entering of process gas and exhaust gas discharging are all accomplished at the pipe tail of quartz ampoule, and this gas phase diffusion equipment is because various process gass are pipe tails through quartz ampoule feeds, and the various process gass of feeding lead to the mouth of pipe of quartz ampoule from the pipe tail of quartz ampoule; To weigh at the diffusion atmosphere of the pipe tail of quartz ampoule mouth of pipe place like this with respect to quartz ampoule; The unsteadiness and the uncontrollability problem that have air-flow, therefore there is inhomogeneities in diffusion concentration in the horizontal, causes the resistance of silicon chip and homogeneous tube crystal silicon battery diffusion side to have inhomogeneities; This will directly influence the uniformity of gas phase diffusion effect, thereby make and in producing the process of crystal silicon solar energy battery efficiently, have very big unsteadiness.
Summary of the invention
The utility model technical problem to be solved provides a kind of PN junction manufacturing process that is used for crystal silicon solar energy battery, can realize the control of air-flow is also stablized, and effectively improves the inhomogeneity Quartz stove tube of diffusion side's resistance of silicon chip.
The utility model solves the problems of the technologies described above the technical scheme that is adopted: a kind of Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction; It is characterized in that it is a double-decker; The outer quartz ampoule and the internal layer air-flow equalizer line that comprise coaxial setting; Radially be provided with quartzy support disk of oral area and the quartzy support disk of afterbody in the described outer quartz ampoule; Described internal layer air-flow equalizer line is placed on quartzy support disk of described oral area and the quartzy support disk of described afterbody; Evenly be provided with the quartzy cutoff board that polylith is used to cut off described annular space vertically in the annular space between described outer quartz ampoule and the described internal layer air-flow equalizer line; It is a plurality of air flow chamber that the described quartzy cutoff board of polylith divides described annular space; Be evenly distributed with the airflow hole of the inner chamber of described air flow chamber of a plurality of connections and described internal layer air-flow equalizer line on the described internal layer air-flow equalizer line, axially be connected with on the quartzy support disk of described afterbody the exhaust pipe that is communicated with the inner chamber of described internal layer air-flow equalizer line and a plurality of respectively with the corresponding one by one process gas air inlet pipe that is communicated with of described air flow chamber.
The diameter of described airflow hole is 0.3~1.0cm.
The diameter of described airflow hole is 0.6cm.
Evenly be provided with four quartzy cutoff boards that are used to cut off described annular space vertically in the annular space between described outer quartz ampoule and the described internal layer air-flow equalizer line, it is four air flow chamber that four described quartzy cutoff boards divide described annular space.
The quartzy support disk of described afterbody and described outer quartz ampoule, described internal layer air-flow equalizer line, described process gas air inlet pipe and described exhaust pipe all are tightly connected.
Described quartzy cutoff board is between quartzy support disk of described oral area and the quartzy support disk of described afterbody.
Offer on the quartzy support disk of described oral area and be used for quartz boat is pushed into the through hole in the described internal layer air-flow equalizer line.
Compared with prior art; The advantage of the utility model is: the Quartz stove tube of the utility model double-decker that outer quartz ampoule and internal layer air-flow equalizer line constitute of serving as reasons; And the annular space between outer quartz ampoule and the internal layer air-flow equalizer line is divided into a plurality of air flow chamber through quartzy cutoff board; Simultaneously on internal layer air-flow equalizer line, evenly be provided with a lot of airflow holes; When using like this process gas through air flow chamber again through the airflow hole uniform deposition to silicon chip surface; The Quartz stove tube of this structure has been realized the control of air-flow and has been stablized; The uniformity that can improve the resistance of silicon chip and homogeneous tube crystal silicon battery diffusion side arrives ± 2% with interior (uniformity of silicon chip and homogeneous tube crystal silicon battery diffusion side resistance both at home and abroad is more than ± 3% at present), thereby has improved the electrical property and the rate of finished products of integral body, influence that quality product rate caused of air-flow to crystal silicon solar energy battery.
Description of drawings
Fig. 1 is the axial cross-sectional schematic of the Quartz stove tube of the utility model;
Fig. 2 is the radially cross-sectional schematic at the A-A place of Quartz stove tube in Fig. 1 of the utility model.
Embodiment
Embodiment describes in further detail the utility model below in conjunction with accompanying drawing.
A kind of Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction that the utility model proposes; As shown in the figure; It is a double-decker; The outer quartz ampoule 1 and internal layer air-flow equalizer line 2 that comprise coaxial setting; The oral area of outer quartz ampoule 1 is connected with quartzy fire door 11; Radially be provided with quartzy support disk 3 of oral area and the quartzy support disk 4 of afterbody in the outer quartz ampoule 1; Axial distance between quartzy support disk 3 of oral area and the quartzy support disk 4 of afterbody is generally the length greater than two quartz boat (not shown)s; Internal layer air-flow equalizer line 2 is placed on quartzy support disk 3 of oral area and the quartzy support disk 4 of afterbody; The part of the inner chamber of internal layer air-flow equalizer line 2 between quartzy support disk 3 of oral area and the quartzy support disk 4 of afterbody constitutes a flat-temperature zone 5, evenly is provided with four quartzy cutoff boards 6 that are used to cut off annular space in the annular space between outer quartz ampoule 1 and the internal layer air-flow equalizer line 2 vertically, and quartzy cutoff board 6 is between quartzy support disk 3 of oral area and the quartzy support disk 4 of afterbody; 6 fens annular spaces of four quartzy cutoff boards are four air flow chamber 7; Be evenly distributed with the airflow hole 21 of the inner chamber of a plurality of connection air flow chamber 7 and internal layer air-flow equalizer line 2 on the internal layer air-flow equalizer line 2, axially be connected with on the quartzy support disk 4 of afterbody the exhaust pipe 8 that is communicated with the inner chamber of internal layer air-flow equalizer line 2 and four respectively with the corresponding one by one process gas air inlet pipe 9 that is communicated with of air flow chamber 7, offer the through hole 31 that is used for quartz boat is pushed into the flat-temperature zone of internal layer air-flow equalizer line 2 on the oral area quartz support disk 3.
In this specific embodiment, generally can the diameter of airflow hole 21 be designed to about 0.3~1.0cm, in actual process, can the diameter of airflow hole 21 be designed to about 0.6cm.
In this specific embodiment; The piece number of quartzy cutoff board 6 also can be made as three or five etc.; Can be according to the actual conditions setting, the effect that is fixedly connected outer quartz ampoule 1 and internal layer air-flow equalizer line 2 is not only played in the setting of quartzy cutoff board 6, to stablize internal layer air-flow equalizer line 2; And cut off the process gas that feeds, make diffusion concentration more even.
In this specific embodiment; The quartzy support disk 4 of afterbody all is tightly connected with outer quartz ampoule 1, internal layer air-flow equalizer line 2, process gas air inlet pipe 9 and exhaust pipe 8, is tightly connected to make that the pressure in the flat-temperature zone of internal layer air-flow equalizer line 2 is more even.
When using the Quartz stove tube of the utility model; Process gas is in the air flow chamber 7 that process gas air inlet pipe 9 gets between outer quartz ampoule 1 and the internal layer air-flow equalizer line 2; The airflow hole 21 of process gas in the air flow chamber 7 on internal layer air-flow equalizer line 2 gets in the processing chamber (being the flat-temperature zone 5 of internal layer air-flow equalizer line); Be deposited on silicon chip surface and the PN junction of diffusion preparation at high temperature uniformly, diffusion back waste gas is discharged processing chamber by exhaust pipe 8.

Claims (7)

1. Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction; It is characterized in that it is a double-decker; The outer quartz ampoule and the internal layer air-flow equalizer line that comprise coaxial setting; Radially be provided with quartzy support disk of oral area and the quartzy support disk of afterbody in the described outer quartz ampoule; Described internal layer air-flow equalizer line is placed on quartzy support disk of described oral area and the quartzy support disk of described afterbody; Evenly be provided with the quartzy cutoff board that polylith is used to cut off described annular space vertically in the annular space between described outer quartz ampoule and the described internal layer air-flow equalizer line; It is a plurality of air flow chamber that the described quartzy cutoff board of polylith divides described annular space; Be evenly distributed with the airflow hole of the inner chamber of described air flow chamber of a plurality of connections and described internal layer air-flow equalizer line on the described internal layer air-flow equalizer line, axially be connected with on the quartzy support disk of described afterbody the exhaust pipe that is communicated with the inner chamber of described internal layer air-flow equalizer line and a plurality of respectively with the corresponding one by one process gas air inlet pipe that is communicated with of described air flow chamber.
2. a kind of Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction according to claim 1, the diameter that it is characterized in that described airflow hole is 0.3~1.0cm.
3. a kind of Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction according to claim 2, the diameter that it is characterized in that described airflow hole is 0.6cm.
4. according to each described a kind of Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction in the claim 1 to 3; It is characterized in that evenly being provided with four quartzy cutoff boards that are used to cut off described annular space vertically in the annular space between described outer quartz ampoule and the described internal layer air-flow equalizer line, it is four air flow chamber that four described quartzy cutoff boards divide described annular space.
5. a kind of Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction according to claim 4 is characterized in that the quartzy support disk of described afterbody and described outer quartz ampoule, described internal layer air-flow equalizer line, described process gas air inlet pipe and described exhaust pipe all are tightly connected.
6. a kind of Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction according to claim 5 is characterized in that described quartzy cutoff board is between quartzy support disk of described oral area and the quartzy support disk of described afterbody.
7. a kind of Quartz stove tube that is used to make the crystal silicon solar energy battery PN junction according to claim 1 is characterized in that offering on the quartzy support disk of described oral area and is used for quartz boat is pushed into the through hole in the described internal layer air-flow equalizer line.
CN2011203798956U 2011-10-09 2011-10-09 Quartz furnace tube used for manufacturing PN junction of crystalline silicon solar cell Expired - Fee Related CN202275863U (en)

Priority Applications (1)

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CN2011203798956U CN202275863U (en) 2011-10-09 2011-10-09 Quartz furnace tube used for manufacturing PN junction of crystalline silicon solar cell

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Application Number Priority Date Filing Date Title
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104419909A (en) * 2013-08-27 2015-03-18 茂迪(苏州)新能源有限公司 Film-coated furnace tube
CN111172595A (en) * 2020-03-06 2020-05-19 帝尔激光科技(无锡)有限公司 Intake and exhaust device for pipes
CN112038444A (en) * 2020-08-05 2020-12-04 英利能源(中国)有限公司 A method for fabricating an N-type crystalline silicon solar cell and a method for fabricating a backside passivation contact structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104419909A (en) * 2013-08-27 2015-03-18 茂迪(苏州)新能源有限公司 Film-coated furnace tube
CN104419909B (en) * 2013-08-27 2016-12-28 茂迪(苏州)新能源有限公司 A kind of plated film boiler tube
CN111172595A (en) * 2020-03-06 2020-05-19 帝尔激光科技(无锡)有限公司 Intake and exhaust device for pipes
CN112038444A (en) * 2020-08-05 2020-12-04 英利能源(中国)有限公司 A method for fabricating an N-type crystalline silicon solar cell and a method for fabricating a backside passivation contact structure

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120613

Termination date: 20151009

EXPY Termination of patent right or utility model