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CN202142524U - Improved triode lead frame - Google Patents

Improved triode lead frame Download PDF

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Publication number
CN202142524U
CN202142524U CN 201120263186 CN201120263186U CN202142524U CN 202142524 U CN202142524 U CN 202142524U CN 201120263186 CN201120263186 CN 201120263186 CN 201120263186 U CN201120263186 U CN 201120263186U CN 202142524 U CN202142524 U CN 202142524U
Authority
CN
China
Prior art keywords
thickness
chip
framework
pins
chip section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201120263186
Other languages
Chinese (zh)
Inventor
杨承武
朱成明
张荣才
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WUJIANG HENGYUAN METAL PRODUCTS CO Ltd
Original Assignee
WUJIANG HENGYUAN METAL PRODUCTS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WUJIANG HENGYUAN METAL PRODUCTS CO Ltd filed Critical WUJIANG HENGYUAN METAL PRODUCTS CO Ltd
Priority to CN 201120263186 priority Critical patent/CN202142524U/en
Application granted granted Critical
Publication of CN202142524U publication Critical patent/CN202142524U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The present utility model discloses an improved triode lead frame which comprises a framework body provided with a plurality of framework units. The middle parts and the lower parts of the neighboring framework units are connected respectively through middle ribs and bottom ribs, each framework unit is composed of an upper heat dissipation part, a chip part connected below the heat dissipation part, and three pins arranged below the chip part. The thickness of the chip part is 0.8mm, the thickness of the heat dissipation part is 0.5mm, the thickness of each pin is 0.5mm, and each framework unit is integrally molded. In the lead frame, the thickness of the chip part is larger than the thickness of the heat dissipation part, thus the frame is not easily deformed when suffered with external forces, the chip disconnection phenomenon caused by framework external force deformation is eliminated, and the framework is more suitable for large chips.

Description

Improved Triode Lead Wire Frame
Technical field
the utility model relates to a kind of lead frame, particularly, relates to a kind of follow-on TO-251/252 type lead frame of triode that is applicable to than large chip..
Background technology
The thickness of the entire body up and down of the lead frame of triode in conventional art is identical; Section bar by smooth is stamped to form, and such structure can cause when triode deforms owing to external force, causing chip to break away from from framework; And; Thermal heat transfer capability after the large size chip encapsulation is relatively poor, causes chip loss of function and effect, even causes serious consequence more.
The utility model content
The thickness that provides a kind of chip section of the utility model greater than the thickness of radiating part, be particularly useful for than Improved Triode Lead Wire Frame large chip, that have good heat transfer effect.
For solving the problems of the technologies described above, the utility model adopts following technical scheme:
a kind of Improved Triode Lead Wire Frame; Comprise frame body with several frame units; The middle part of adjacent described frame unit, bottom are connected through middle muscle, end muscle respectively; Each described frame unit comprise top radiating part, be connected the below of described radiating part chip section, be positioned at three pins of the below of described chip section; The thickness of described chip section is 0.8mm, and the thickness of described radiating part is 0.5mm, and the thickness of three described pins is 0.5mm.
preferably; The side pipe pin that comprises the both sides of interim pins, the described interim pins of separation in three described pins; The top of described side pipe pin and described chip section are separated; Be connected through muscle in described and muscle of the described end between described side pipe pin and the described interim pins, further, be connected through a bending part transition between described chip section and the described interim pins.
preferably, the junction between described radiating part and the described chip section has a Long Circle through hole.
The beneficial effect of the utility model is: the thickness of chip section is greater than the thickness of radiating part, and the advantage of design mainly contains like this: 1), use external force causes the triode distortion and failure phenomenon when eliminating the encapsulation large size chip; 2), the localized heat conduction strengthened, the heat that impels large size chip to produce is prone to be delivered to the external world, prevents that chip overheating lost efficacy.While has also eliminated owing to chip receives external force deformation and has caused the phenomenon that breaks away from, and this framework more is applicable to more large-scale chip.
Description of drawings
Accompanying drawing 1 is the Improved Triode Lead Wire Frame of the utility model;
accompanying drawing 2 is that A-A in the accompanying drawing 1 is to cutaway view.
In accompanying drawing: 1, frame unit; 2, middle muscle; 3, end muscle; 4, radiating part; 5, chip section; 6, interim pins; 7, side pipe pin; 8, bending part; 9, Long Circle through hole.
Embodiment
Below in conjunction with embodiment shown in the drawings the technical scheme of the utility model is done following detailed description the in detail:
are shown in accompanying drawing 1 and accompanying drawing 2; The Improved Triode Lead Wire Frame of the utility model comprises the frame body with several frame units 1, and the middle part of adjacent frame unit 1, bottom are connected through middle muscle 2, end muscle 3 respectively, each frame unit 1 comprise top radiating part 4, be connected the below of radiating part 4 chip section 5, be positioned at three pins of the below of chip section 5; The thickness of chip section 5 is 0.8mm; The thickness of radiating part 4 is 0.5mm, and the thickness of three pins is 0.5mm, comprises the side pipe pin 7 of the both sides of interim pins 6, separation interim pins 6 in three pins; The top of side pipe pin 7 and chip section 5 are separated; Be connected through middle muscle 2 and end muscle 3 between side pipe pin 7 and the interim pins 6, be connected through bending part 8 transition between chip section 5 and the interim pins 6, the junction between radiating part 4 and the chip section 5 has a Long Circle through hole 9; Receive the influence of external force deformation to reduce radiating part 4 to chip section 5; The upper end of each side pipe pin 7 has one in order to increase the head of package area, and the position that the bottom of each pin is connected with end muscle 3 is the necking down shape, is convenient to separation cuts.
the utility model improves to the lead frame of triode of TO-251/252 type; Make the thickness of the thickness of its chip section 5 greater than radiating part 4; Make that chip is difficult for producing distortion when receiving external force; Also, make this framework more be applicable to more large-scale chip with regard to having eliminated the phenomenon that receives external force deformation to cause chip to break away from owing to framework.
the foregoing description is only for explaining the technical conceive and the characteristics of the utility model; Its purpose is to let the personage who is familiar with this technology can understand content of the utility model and enforcement according to this, can not limit the protection range of the utility model with this.All equivalences of being done according to the utility model spirit change or modify, and all should be encompassed within the protection range of the utility model.

Claims (4)

1. Improved Triode Lead Wire Frame; Comprise frame body with several frame units; The middle part of adjacent described frame unit, bottom are connected through middle muscle, end muscle respectively; Each described frame unit comprise top radiating part, be connected the below of described radiating part chip section, be positioned at three pins of the below of described chip section, it is characterized in that: the thickness of described chip section is 0.8mm, the thickness of described radiating part is 0.5mm; The thickness of three described pins is 0.5mm, and each described frame unit all is formed in one.
2. Improved Triode Lead Wire Frame according to claim 1; It is characterized in that: the side pipe pin that comprises the both sides of interim pins, the described interim pins of separation in three described pins; The top of described side pipe pin and described chip section are separated, and are connected through muscle in described and muscle of the described end between described side pipe pin and the described interim pins.
3. Improved Triode Lead Wire Frame according to claim 2 is characterized in that: be connected through a bending part transition between described chip section and the described interim pins.
4. Improved Triode Lead Wire Frame according to claim 1 is characterized in that: the junction between described radiating part and the described chip section has a Long Circle through hole.
CN 201120263186 2011-07-25 2011-07-25 Improved triode lead frame Expired - Fee Related CN202142524U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201120263186 CN202142524U (en) 2011-07-25 2011-07-25 Improved triode lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201120263186 CN202142524U (en) 2011-07-25 2011-07-25 Improved triode lead frame

Publications (1)

Publication Number Publication Date
CN202142524U true CN202142524U (en) 2012-02-08

Family

ID=45553569

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201120263186 Expired - Fee Related CN202142524U (en) 2011-07-25 2011-07-25 Improved triode lead frame

Country Status (1)

Country Link
CN (1) CN202142524U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102254894A (en) * 2011-07-25 2011-11-23 吴江恒源金属制品有限公司 Improved triode lead frame
CN103617977A (en) * 2013-11-08 2014-03-05 张轩 High-power molding-encapsulated lead frame

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102254894A (en) * 2011-07-25 2011-11-23 吴江恒源金属制品有限公司 Improved triode lead frame
CN103617977A (en) * 2013-11-08 2014-03-05 张轩 High-power molding-encapsulated lead frame

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120208

Termination date: 20150725

EXPY Termination of patent right or utility model