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CN202121040U - High defect coplanar waveguide double-frequency filter - Google Patents

High defect coplanar waveguide double-frequency filter Download PDF

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CN202121040U
CN202121040U CN2011202467424U CN201120246742U CN202121040U CN 202121040 U CN202121040 U CN 202121040U CN 2011202467424 U CN2011202467424 U CN 2011202467424U CN 201120246742 U CN201120246742 U CN 201120246742U CN 202121040 U CN202121040 U CN 202121040U
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coplanar waveguide
defect
filter
band
frequency filter
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孟令琴
钱斐斐
黄劲松
祝君豪
孟春香
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SHANGHAI UNIVERSITY
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Abstract

The utility model relates to a high defect coplanar waveguide double-frequency filter which is composed of a front side metallic signal layer, a middle layer, and a bottom layer, and is characterized in that the front side metallic signal layer has a section of central conduction band, the two sides of the central conduction band are grounding metal conductive planes, and the grounding conductive plane is provided with a spurline type defected ground structure and a short-circuited stub with the inductance coupling characteristic. The middle layer is a medium plate, the bottom of the medium plate is not provided with a metal coating. Compared with a conventional coplanar waveguide filter, the S11 in a pass band of the novel double-frequency filter is smaller, the in-band insertion loss is small, so the high defect coplanar waveguide double-frequency filter has an ultra wide stop band characteristic, and restrains the first, the second, and the higher harmonic. The high defect coplanar waveguide double-frequency filter is simple in structure, high in processing precision, and is easy to operate and process. In addition, the filter only has one side, so the filter can be applied to the development of a multilayer board to realize the miniaturization.

Description

高缺陷共面波导双频滤波器High defect coplanar waveguide dual frequency filter

技术领域 technical field

    本实用新型涉及一种高缺陷共面波导双频滤波器,属于无线通信技术领域中双频带通滤波器范畴。 The utility model relates to a high-defect coplanar waveguide dual-frequency filter, which belongs to the category of dual-frequency bandpass filters in the technical field of wireless communication.

背景技术 Background technique

现代信息社会中不断膨胀的巨大信息量要求通信技术向着高速、宽带、大容量方向发展,这就意味着信息的传播媒体—电磁波的使用频率不断向更高的频段方向拓展。同时单频段通信系统已显得陈旧,不能很好地满足无线通信的需求。随着无线通信的迅猛发展,单频段通信系统越来越显示出它的局限性。 The ever-expanding huge amount of information in the modern information society requires communication technology to develop towards high speed, broadband, and large capacity, which means that the frequency of use of electromagnetic waves, the information dissemination medium, continues to expand to higher frequency bands. At the same time, the single-band communication system has become obsolete and cannot meet the needs of wireless communication well. With the rapid development of wireless communication, the single-band communication system shows its limitations more and more.

为了充分利用现有的频谱和基础设备资源,在通信系统中设置能同时工作的多个通信频段,有效途径之一就是研究和开发高性能的双频段微波滤波器,用一个器件实现两个器件的工作既能节省资源又能减少经费。现代通信的快速发展需要有效利用越来越多的频率信道,为了减小通信电路设备体积和重量,双频段器件的研究越来越引起重视。因此,对双频带滤波器的研究具有重要的意义和实用价值。 In order to make full use of the existing spectrum and basic equipment resources, one of the effective ways to set up multiple communication frequency bands that can work simultaneously in the communication system is to research and develop high-performance dual-band microwave filters, and use one device to realize two devices. The work can not only save resources but also reduce expenses. The rapid development of modern communication requires the effective use of more and more frequency channels. In order to reduce the volume and weight of communication circuit equipment, the research of dual-band devices has attracted more and more attention. Therefore, the research on dual-band filters has important significance and practical value.

传统的滤波器设计都是以微带传输线为基础,不利于工程上的集成,而且面积较大,这是在微波和毫米波集成电路设计中的一大难题。而共面波导是由微带传输线发展起来的一种重要的微波平面传输线。与常规的微带传输线相比,共面波导具有容易制作,容易实现无源、有源器件在微波电路中的串联和并联,寄生参量小,其色散特性好,容易提高电路密度等优点,因此共面波导被广泛应用于微波、毫米波、光学和高温超导等集成电路中。所以探求以共面波导为传输线基础,并制作性能优良的双频滤波器是具有重要意义的。 Traditional filter design is based on microstrip transmission lines, which is not conducive to engineering integration and has a large area, which is a major problem in the design of microwave and millimeter wave integrated circuits. The coplanar waveguide is an important microwave planar transmission line developed from the microstrip transmission line. Compared with conventional microstrip transmission lines, coplanar waveguides are easy to manufacture, easy to realize the series and parallel connection of passive and active devices in microwave circuits, small parasitic parameters, good dispersion characteristics, and easy to increase circuit density. Therefore, Coplanar waveguides are widely used in integrated circuits such as microwaves, millimeter waves, optics, and high-temperature superconductors. Therefore, it is of great significance to explore the use of coplanar waveguides as the basis of transmission lines and to manufacture dual-band filters with excellent performance.

实用新型内容 Utility model content

本实用新型的目的在于针对已有技术存在的缺陷,提供一种高缺陷共面波导双频滤波器。这种滤波器设计简单,体积小,容易加工,带内损耗低,且有很好的谐波抑制特性,实现滤波器的小型化。 The purpose of the utility model is to provide a high-defect coplanar waveguide dual-frequency filter aiming at the defects existing in the prior art. This kind of filter is simple in design, small in size, easy to process, low in-band loss, and has good harmonic suppression characteristics, and realizes the miniaturization of the filter.

为达到上述目的,本实用新型的构思是: For achieving the above object, design of the present utility model is:

(1)         在传统的DGS基础上进行改进,提出新型的DGS结构,具有更深的阻带抑制和更好的慢波特性,改善滤波器的阻带抑制特性。 (1) On the basis of the traditional DGS, a new DGS structure is proposed, which has deeper stop-band suppression and better slow-wave characteristics, and improves the stop-band suppression characteristics of the filter.

(2)         在传统的共面波导滤波器的基础上,加入新型DGS结构和开路枝节,实现了新的耦合,可以通过改变耦合间距来改变中心频点的位置。 (2) On the basis of the traditional coplanar waveguide filter, a new DGS structure and an open circuit branch are added to realize a new coupling, and the position of the center frequency point can be changed by changing the coupling spacing.

(3)         本实用新型采用如下的介质板材料:介质基板选用介电常数为                                                

Figure 2011202467424100002DEST_PATH_IMAGE001
=10.2,厚度h=0.635mm。 (3) The utility model adopts the following dielectric plate materials: the dielectric constant of the dielectric substrate is
Figure 2011202467424100002DEST_PATH_IMAGE001
=10.2, thickness h =0.635mm.

(4)         加工后的电路板为一层,其反面无金属镀层,正面包括一面金属镀层蚀刻共面波导结构和新型缺陷地结构,其中微带两端焊有两个SMA接头,用于实际测量。 (4) The processed circuit board is one layer, the reverse side has no metal coating, and the front side includes a metal coating etched coplanar waveguide structure and a new defect ground structure, in which two SMA connectors are welded at both ends of the microstrip for actual measurement .

根据上述实用新型构思,本实用新型采用下述技术方案: According to above-mentioned utility model design, the utility model adopts following technical scheme:

一种高缺陷共面波导双频滤波器,由由正面金属信号层、中间层和底面 层构成,其特征在于所述正面金属信号层有一段中心导带,中心导带两侧为接地金属导电平面,两侧接地导平面上有岔线型缺陷地结构和具有电感耦合特性的短路枝节,所述中间层是介质板,介质板底面没有金属镀层。 A high-defect coplanar waveguide dual-frequency filter, consisting of a front metal signal layer, an intermediate layer and a bottom layer, is characterized in that the front metal signal layer has a central conduction band, and the two sides of the central conduction band are grounded metal conductive The ground plane on both sides has a fork-type defect structure and a short-circuit stub with inductive coupling characteristics. The middle layer is a dielectric board, and the bottom surface of the dielectric board has no metal plating.

所述岔线型缺陷地结构是:在所述金属导电平面上蚀刻出两个并排的正方形,该两个正方形左侧和右侧分别有一条蚀刻槽,该蚀刻槽外端与正方形接通,而内端接通一条位于正方形内侧的横向蚀刻槽,该横向蚀刻槽的一端接通所述短路枝节,另一端垂直弯折一小段围绕正方形;所述短路枝节是:在所述两个正方形的左侧和右侧各蚀刻两条垂直平行的狭槽,该两狭槽外端略高过正方形,而内端略超过所述横向蚀刻槽。 The structure of the bifurcated line defect is as follows: two side-by-side squares are etched on the metal conductive plane. There is an etching groove on the left and right sides of the two squares, and the outer end of the etching groove is connected to the square. And the inner end is connected to a horizontal etching groove located inside the square, one end of the lateral etching groove is connected to the short-circuit branch, and the other end is vertically bent for a small section around the square; the short-circuit branch is: between the two squares Two vertical parallel slots are respectively etched on the left side and the right side, the outer ends of the two slots are slightly higher than the square, and the inner ends are slightly higher than the horizontal etching groove.

所述介质板层为介电常数

Figure 165046DEST_PATH_IMAGE001
=10.2的介质板,该介质板厚度=0.635mm±0.05mm。   The dielectric plate layer is a dielectric constant
Figure 165046DEST_PATH_IMAGE001
=10.2 medium plate, the thickness of the medium plate h =0.635mm±0.05mm.

所述金属微带线可以是导电性能较好的金属材料,如金、或银、或铜。 The metal microstrip line may be a metal material with good electrical conductivity, such as gold, silver, or copper.

本实用新型与现有技术相比较,具有如下显而易见的实质性特点和优点: Compared with the prior art, the utility model has the following obvious substantive features and advantages:

(1)        本实用新型结构简单,易于加工。由于本结构是在共面波导表面直接蚀刻DGS结构和开路枝节形成滤波器,加工精度高,简单易行,有利于集成。 (1) The utility model has a simple structure and is easy to process. Since this structure is to directly etch the DGS structure and the open branch to form a filter on the surface of the coplanar waveguide, the processing precision is high, simple and easy, and is beneficial to integration.

(2)        与传统平面结构相比,辐射损耗较小,利于应用在微波波段。和传统波导结构相比,体积小、集成度高、价格低、易于加工,可以用PCB或者LTCC等工艺实现。 (2) Compared with the traditional planar structure, the radiation loss is smaller, which is conducive to the application in the microwave band. Compared with the traditional waveguide structure, it is small in size, high in integration, low in price, and easy to process, and can be realized by PCB or LTCC technology.

(3)        在传统的共面波导滤波器的结构上加入新型DGS结构,具有更好的谐波抑制特性,带内损耗低,同时改变DGS结构的面积,也可调整两个通带的中心频率位置。 (3) A new DGS structure is added to the structure of the traditional coplanar waveguide filter, which has better harmonic suppression characteristics and low in-band loss. At the same time, changing the area of the DGS structure can also adjust the center frequency of the two passbands Location.

附图说明 Description of drawings

图1 传统的哑铃型DGS单元结构示意图。 Figure 1 Schematic diagram of the traditional dumbbell-shaped DGS unit structure.

 图2 新型岔线型 DGS单元结构示意图。 Fig. 2 Schematic diagram of the new fork-line DGS unit structure.

图3 传统共面波导滤波器的结构示意图。 Figure 3 Schematic diagram of the structure of a traditional coplanar waveguide filter.

图4 高缺陷共面波导滤波器的结构示意图。 Fig. 4 Schematic diagram of the structure of the high-defect coplanar waveguide filter.

图5 传统共面波导滤波器的频率响应图。 Figure 5 Frequency response plot of a conventional coplanar waveguide filter.

图6 高缺陷共面波导滤波器的频率响应图。 Figure 6. Frequency response plot of a high-defect coplanar waveguide filter.

具体实施方式 Detailed ways

下面结合附图对本实用新型的优选实施例作详细说明:  Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail:

本实用新型所提出的新型岔线型DGS单元结构的示意图如图2所示。它将传统哑铃型DGS单元结构,如图1所示,中间的矩形连接部分移动到一侧,并在两个矩形蚀刻部分上分别添加一个金属枝节,从而影响TE10模的传播。在图中,灰色区域为金属镀层,白色区域不做任何金属涂覆。通过改变谐振器的尺寸可以调节通带和传输零点的位置,改变两个谐振器直接的金属导带部分的宽度可以改变两个谐振器之间的耦合,从而可以调节滤波器的频率响应。 The schematic diagram of the new branch line type DGS unit structure proposed by the utility model is shown in Fig. 2 . It moves the traditional dumbbell-shaped DGS unit structure, as shown in Figure 1, the middle rectangular connecting part is moved to one side, and a metal stub is added to the two rectangular etching parts, thereby affecting the propagation of the TE 10 mode. In the picture, the gray areas are metallized, and the white areas do not have any metal coating. The position of passband and transmission zero can be adjusted by changing the size of the resonator, and the coupling between the two resonators can be changed by changing the width of the metal conduction band part directly between the two resonators, so that the frequency response of the filter can be adjusted.

如图3是传统共面波导滤波器结构示意图。图4是高缺陷共面波导滤波器的结构示意图。 Figure 3 is a schematic structural diagram of a traditional coplanar waveguide filter. Fig. 4 is a schematic structural diagram of a high-defect coplanar waveguide filter.

实施例一: Embodiment one:

参见图4,本高缺陷共面波导滤波器,由正面金属信号层、中间层和底面 层构成,其特征在于所述正面金属信号层有一段中心导带,中心导带两侧为接地金属导电平面,两侧接地导平面上有岔线型缺陷地结构和具有电感耦合特性的短路枝节,所述中间层是介质板,介质板底面没有金属镀层。其中PCB板材介电常数为10.2,板材厚度为0.635mm。 Referring to Figure 4, this high-defect coplanar waveguide filter is composed of a front metal signal layer, an intermediate layer and a bottom layer, and is characterized in that the front metal signal layer has a central conduction band, and the two sides of the center conduction band are grounded metal conductive The ground plane on both sides has a fork-type defect structure and a short-circuit stub with inductive coupling characteristics. The middle layer is a dielectric board, and the bottom surface of the dielectric board has no metal plating. Among them, the dielectric constant of the PCB board is 10.2, and the thickness of the board is 0.635mm.

实施例二: Embodiment two:

本实施例与实施例一基本相同,特别之处是:所述岔线型缺陷地结构是:在所述金属导电平面上蚀刻出两个并排的正方形,该两个正方形左侧和右侧分别有一条蚀刻槽,该蚀刻槽外端与正方形接通,而内端接通一条位于正方形内侧的横向蚀刻槽,该横向蚀刻槽的一端接通所述短路枝节,另一端垂直弯折一小段围绕正方形;所述短路枝节是:在所述两个正方形的左侧和右侧各蚀刻两条垂直平行的狭槽,该两狭槽外端略高过正方形,而内端略超过所述横向蚀刻槽。 This embodiment is basically the same as Embodiment 1, and the special feature is that the structure of the branch line defect is: two side-by-side squares are etched on the metal conductive plane, and the left and right sides of the two squares are respectively There is an etching groove, the outer end of which is connected to the square, and the inner end is connected to a horizontal etching groove located inside the square. square; the short-circuit branch is: two vertical and parallel slots are respectively etched on the left and right sides of the two squares, the outer ends of the two slots are slightly higher than the square, and the inner ends are slightly higher than the horizontal etching groove.

实施例三: Embodiment three:

本实施例与实施例二基本相同,特别之处是: This embodiment is basically the same as embodiment two, and the special features are:

图4是本实施例的结构示意图,经过设计、仿真和优化,最终确定高缺陷共面波导双频滤波器的具体尺寸如下: Figure 4 is a schematic structural diagram of this embodiment. After design, simulation and optimization, the specific dimensions of the high-defect coplanar waveguide dual-frequency filter are finally determined as follows:

S=0.4mm,W=1.4mm,g=0.25mm,g1=0.2mm,d1=1.5mm,d2=2.7mm, S=0.4mm, W=1.4mm, g=0.25mm, g1=0.2mm, d1=1.5mm, d2=2.7mm,

L1=5mm,L2=4.6mm,L3=5.8mm,L4=1.5mm, L1=5mm, L2=4.6mm, L3=5.8mm, L4=1.5mm,

W1=0.3mm,W2=0.3mm,W3=0.7mm,W4=0.3mm,W5=0.4mm。 W1=0.3mm, W2=0.3mm, W3=0.7mm, W4=0.3mm, W5=0.4mm.

基于上述方法设计了中心频率为 2.65GHz/4.46GHzz,相对带宽约为2%/6.7%的微波滤波器,通过电磁仿真软件HFSS进行仿真,调试。 Based on the above method, a microwave filter with a center frequency of 2.65GHz/4.46GHzz and a relative bandwidth of about 2%/6.7% was designed, which was simulated and debugged by the electromagnetic simulation software HFSS.

图5显示了传统共面波导滤波器的频率响应。 Figure 5 shows the frequency response of a conventional coplanar waveguide filter.

图6显示了高缺陷共面波导滤波器的频率响应,仿真结果表明无论是带内特性还是带外抑制,本发明具有很好的优越性,且带内插损较小。而且滤波器的结构简单,尺寸小,实现了小型化。 Fig. 6 shows the frequency response of the high-defect coplanar waveguide filter, and the simulation results show that the present invention has good advantages in both in-band characteristics and out-of-band suppression, and the in-band insertion loss is small. Moreover, the structure of the filter is simple, the size is small, and miniaturization is realized.

以上仿真结果表明: The above simulation results show that:

(1)    通带带宽约为30MHz/600MHz,带内插入损耗均小于2dB。 (1) The passband bandwidth is about 30MHz/600MHz, and the in-band insertion loss is less than 2dB.

(2)    具有较宽的阻带抑制特性,带外在-20dB一下的从4.98GHz~12.5GHz。 (2) It has a wide stop-band suppression characteristic, and the out-of-band is below -20dB from 4.98GHz to 12.5GHz.

(3)    在实现了带内,带外性能良好的,同时微带结构简单,尺寸也得到小型化,印刷简易,材料损耗相对较小。 (3) After achieving good in-band and out-of-band performance, the structure of the microstrip is simple, the size is also miniaturized, the printing is simple, and the material loss is relatively small.

Claims (3)

1.一种高缺陷共面波导双频滤波器,由正面金属信号层、中间层和底面 层构成,其特征在于所述正面金属信号层有一段中心导带(1),中心导带(1)两侧为接地金属导电平面(2),两侧接地导平面(2)上有岔线型缺陷地结构(3)和具有电感耦合特性的短路枝节(4),所述中间层是介质板(6),介质板(6)底面没有金属镀层(7)。 1. A high-defect coplanar waveguide dual-frequency filter is composed of a front metal signal layer, an intermediate layer and a bottom surface layer, and is characterized in that the front metal signal layer has a section of central conduction band (1), a central conduction band (1 ) on both sides are grounded metal conductive planes (2), and on both sides of the grounded planes (2) there are bifurcated line-type defect ground structures (3) and short-circuit stubs (4) with inductive coupling characteristics, and the middle layer is a dielectric board (6), there is no metal coating (7) on the bottom surface of the dielectric plate (6). 2.根据权利要求1所述的高缺陷共面波导双频滤波器,其特征在所述岔线型缺陷地结构(3)是:在所述金属导电平面(2)上蚀刻出两个并排的正方形(10),该两个正方形(10)左侧和右侧分别有一条蚀刻槽(8),该蚀刻槽(8)外端与正方形(10)接通,而内端接通一条位于正方形内侧的横向蚀刻槽(9),该横向蚀刻槽(9)的一端接通所述短路枝节(4),另一端垂直弯折一小段(11)围绕正方形(10);所述短路枝节(4)是:在所述两个正方形(10)的左侧和右侧各蚀刻两条垂直平行的狭槽(5),该两狭槽(5)外端略高过正方形(10),而内端略超过所述横向蚀刻槽(9)。 2. The high-defect coplanar waveguide dual-band filter according to claim 1, characterized in that the structure (3) of the bifurcated line defect is: two side by side are etched on the metal conductive plane (2) square (10), the two squares (10) have an etching groove (8) on the left and right sides respectively, the outer end of the etching groove (8) is connected with the square (10), and the inner end is connected with a A horizontal etching groove (9) inside the square, one end of the horizontal etching groove (9) is connected to the short-circuit branch (4), and the other end is vertically bent for a small section (11) to surround the square (10); the short-circuit branch ( 4) is: two vertical and parallel slots (5) are respectively etched on the left and right sides of the two squares (10), the outer ends of the two slots (5) are slightly higher than the squares (10), and The inner end slightly exceeds the lateral etching groove (9). 3.根据权利要求1所述的高缺陷共面波导双频滤波器,其特征在于所述介质板(6)为介电常数                                               =10.2的介质板,该介质板厚度=0.635mm±0.05mm。 3. The high-defect coplanar waveguide dual-frequency filter according to claim 1, characterized in that the dielectric plate (6) has a dielectric constant =10.2 medium plate, the thickness of the medium plate h =0.635mm±0.05mm.
CN2011202467424U 2011-07-14 2011-07-14 High defect coplanar waveguide double-frequency filter Expired - Fee Related CN202121040U (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105226356A (en) * 2015-10-03 2016-01-06 上海大学 Tunable filter based on defect ground structure designs
CN105449326A (en) * 2015-11-30 2016-03-30 成都亿豪智科技有限公司 High-selectivity and wide-suppression microwave filter and design method therefor
CN106326542A (en) * 2016-08-19 2017-01-11 西安电子科技大学 Design method of low-pass filter based on DGS (Defected Ground Structure)
CN111900515A (en) * 2019-05-06 2020-11-06 楼氏卡泽诺维亚公司 Defected ground structure coplanar with radio frequency assembly
CN112186315A (en) * 2020-09-28 2021-01-05 努比亚技术有限公司 Double-frequency filter and mobile terminal

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105226356A (en) * 2015-10-03 2016-01-06 上海大学 Tunable filter based on defect ground structure designs
CN105226356B (en) * 2015-10-03 2018-03-06 上海大学 Tunable filter design based on defect ground structure
CN105449326A (en) * 2015-11-30 2016-03-30 成都亿豪智科技有限公司 High-selectivity and wide-suppression microwave filter and design method therefor
CN105449326B (en) * 2015-11-30 2018-04-10 超视距成都科技有限责任公司 The microwave filter and its design method of the wide suppression of high selectivity
CN106326542A (en) * 2016-08-19 2017-01-11 西安电子科技大学 Design method of low-pass filter based on DGS (Defected Ground Structure)
CN106326542B (en) * 2016-08-19 2019-04-23 西安电子科技大学 Design method of low-pass filter based on DGS
CN111900515A (en) * 2019-05-06 2020-11-06 楼氏卡泽诺维亚公司 Defected ground structure coplanar with radio frequency assembly
US11355828B2 (en) 2019-05-06 2022-06-07 Knowles Cazenovia, Inc. Defected ground structure coplanar with radio frequency component
CN111900515B (en) * 2019-05-06 2022-07-29 楼氏卡泽诺维亚公司 Radio frequency device
CN112186315A (en) * 2020-09-28 2021-01-05 努比亚技术有限公司 Double-frequency filter and mobile terminal

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