CN202058786U - Luminescent device adopting COB packaging - Google Patents
Luminescent device adopting COB packaging Download PDFInfo
- Publication number
- CN202058786U CN202058786U CN201120086829XU CN201120086829U CN202058786U CN 202058786 U CN202058786 U CN 202058786U CN 201120086829X U CN201120086829X U CN 201120086829XU CN 201120086829 U CN201120086829 U CN 201120086829U CN 202058786 U CN202058786 U CN 202058786U
- Authority
- CN
- China
- Prior art keywords
- substrate
- led chip
- circuit board
- utmost point
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004806 packaging method and process Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 7
- 238000003466 welding Methods 0.000 abstract description 7
- 238000004021 metal welding Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 244000247747 Coptis groenlandica Species 0.000 description 6
- 235000002991 Coptis groenlandica Nutrition 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 235000003392 Curcuma domestica Nutrition 0.000 description 2
- 244000008991 Curcuma longa Species 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 235000003373 curcuma longa Nutrition 0.000 description 2
- 208000002925 dental caries Diseases 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000004224 protection Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 235000013976 turmeric Nutrition 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Led Device Packages (AREA)
Abstract
A luminescent device adopting COB (Chip On Board) packaging comprises at least one LED chip, at least one substrate and a circuit board. The LED chip is provided with an N pole and a P pole, wherein an electrode layer is covered on the N pole and the P pole; two substrate welding pads, used for electrically connected with the N pole and the P pole of the LED chip respectively, are arranged on the upper surface of each substrate. The circuit board comprises a basal plate, a conductive layer and an insulating layer, wherein the basal plate is provided with at least one cavity; the conductive layer is covered on the upper surface of the basal plate and partly extends to the upper part of the cavity; the insulating layer is covered on the upper surface of the conductive layer; the LED chip is inversely mounted on the substrate; the electrode layer on the N pole and the P pole of the LED chip are respectively connected with the two substrate welding pads of the substrate; the substrate is arranged in the cavity of the circuit board; and the two substrate welding pads of the substrate are respectively connected with the conductive layer in the cavity of the circuit board via metal welding balls. The luminescent device adopting the COB packaging has low cost, high rate of good product and high reliability.
Description
Technical field
The utility model belongs to the manufacturing field of luminescent device, relates to a kind of LED device, relates in particular to a kind of LED device of the COB of employing chip encapsulation technology.
Background technology
Light-emitting diode (LED) is a kind of energy-conservation and lighting source environmental protection characteristic of having, and integrates high light efficiency, low energy consumption, the low premium properties such as cost of safeguarding.Estimate that in theory the luminous efficiency of LED illuminating lamp can meet or exceed from 10 times of vehement lamp, 2 times of fluorescent lamp.At present LED be widely used in that mobile phone is backlight, LCD display is backlight, construction landscape, indication, special lighting etc., and expand to fields such as general lighting, automotive lightings day by day.Along with the raising of LED illuminating product power and luminous efficiency, the selection of structure and material will be to performance and the useful life of LED having decisive influence.Wherein a kind of structure of LED is in the flip chip bonding mode led chip flip chip bonding to be connected on the substrate, and its advantage is that the more traditional formal dress chip structure of its reliability and heat-sinking capability is better.Yet, being limited by the limitation of conventional package technology, the advantage of high-power flip chip bonding LED can't well embody.
See also Fig. 1, it is existing a kind of power-type LED device based on metal circuit board.This LED device comprises a led chip 10, a substrate 20 and a metal circuit board 30.The metal level 33 that this metal circuit board 30 comprises substrate 31, covers the insulating barrier 32 of substrate 31 upper surfaces and cover these insulating barrier 32 surfaces, this metal level 33 is provided with the conducting wire.These led chip 10 upside-down mountings are on this substrate 20, and this substrate 20 is arranged on this metal circuit board 30, and this substrate 20 is electrically connected with metal level 33 by metal wire 40.Adopt epoxy resin 50 that led chip 10, substrate 20 and metal wire 40 are wrapped in and finish whole encapsulating structure in it.But the thermal stress when irritating epoxy resin 50 as sealing when encapsulating for this encapsulating structure makes metal wire 40 distortion easily, even fractures, and reduces yield of products and reliability thereby make.Simultaneously, integrated in order to realize the multicore sheet, by metal wire interconnection production yields, reliability all can be reduced, and the use of metal wire also increased packaging cost, and made operation loaded down with trivial details.
The utility model content
The purpose of this utility model is to overcome shortcoming of the prior art with not enough, provides that a kind of technology is simple, yield and the high luminescent device of reliability.
The utility model is achieved through the following technical solutions: a kind of employing COB packaged light emitting device, it comprises at least one led chip, at least one substrate and a circuit board.This led chip has a N utmost point and a P utmost point, at surface coverage one electrode layer of this N utmost point and the P utmost point.The upper surface of each substrate is provided with two substrate weld pads, in order to be electrically connected with the N utmost point and the P utmost point of this led chip respectively.This circuit board comprises a substrate, a conductive layer and an insulating barrier, and this substrate has at least one cavity, and upper surface and part that this conductive layer covers this substrate extend to the cavity top, and this insulating barrier covers the upper surface of this conductive layer.This led chip upside-down mounting is on this substrate, and the N utmost point of this led chip is connected with two substrate weld pads of this substrate respectively with the extremely surperficial electrode layer of P; This substrate is arranged in the cavity of this circuit board, and two substrate weld pads of this substrate are connected with the conductive layer of this circuit board in cavity by a metal soldered ball respectively.
Further, comprise that also one is heat sink, this is heat sink to be arranged on the lower surface of this substrate, and the lower surface of this substrate by heat-conducting glue be fixed on this heat sink on.
Further, also comprise a reflector, the inner wall surface of the receiving space of this reflector is provided with reflector layer, and this reflector is arranged on the upper surface of the insulating barrier of this circuit board, and this led chip is positioned at the receiving space of this reflector.
Further, comprise a package lens, its top that is arranged on this reflector is sealed in this led chip in the receiving space of reflector.
Further, this led chip also comprises the salient point soldered ball, and it covers the surface of the electrode layer of the N utmost point and the P utmost point, and the N utmost point of this led chip is connected with the substrate weld pad of substrate with the salient point soldered ball by electrode layer respectively with the P utmost point.
Further, this circuit board also comprises a metal pad, and this metal pad is arranged between this metal soldered ball and the conductive layer of this circuit board in cavity.
With respect to prior art, the P of the led chip in the luminescent device of the present utility model, N electrode link to each other with the substrate weld pad respectively in the mode of upside-down mounting welding, this substrate is arranged in the cavity of circuit board, the substrate weld pad is received on the conductive layer of circuit board by the metal welding ball bonding simultaneously, conductive layer links to each other with external electrode on the circuit board, do not need to beat gold thread, thereby saved the needed material of support and gold thread, reduce cost, while also can be avoided gold thread to be heated stress influence when encapsulation and be out of shape, even fracture, thereby reduce yield of products and reliability.
In order to understand the utility model more clearly, set forth embodiment of the present utility model below with reference to description of drawings.
Description of drawings
Fig. 1 is existing a kind of power-type LED device based on metal circuit board.
Fig. 2 is the employing COB packaged light emitting device cross-sectional view of the utility model embodiment 1.
Fig. 3 is the employing COB packaged light emitting device cross-sectional view of the utility model embodiment 2.
Fig. 4 is the employing COB packaged light emitting device cross-sectional view of the utility model embodiment 3.
Embodiment
Embodiment 1:
See also Fig. 2, it is the employing COB packaged light emitting device cross-sectional view of the utility model embodiment 1.This luminescent device comprises a led chip 100, a substrate 200, a circuit board 300, a reflector 400 and a package lens 500 and one heat sink 600.
This led chip 100 has a N utmost point and a P utmost point.One electrode layer 102 covers the surface of this N utmost point and the P utmost point respectively.Salient point soldered ball 104 is separately positioned on the surface of this electrode layer 102.
The surface of this substrate 200 is provided with two substrate weld pads 202, in order to be electrically connected with the N utmost point and the P utmost point of this led chip 100 respectively.
This circuit board 300 comprises a substrate 304, a conductive layer 306 and an insulating barrier 308.This substrate 304 is arranged on this upper surface of heat sink 600, and this substrate 304 has a cavity 310, and in order to place this substrate 200, heat sink 600 expose in this cavity 310.Upper surface and part that this conductive layer 306 covers this substrate 304 extend to cavity 301 tops.This insulating barrier 308 covers the upper surface of this conductive layer 306.The lower surface that is positioned at the conductive layer 306 of these cavity 301 tops is provided with a metal pad 302.
This reflector 400 has a receiving space 410, and the inner wall surface of this receiving space 410 is provided with the reflector layer 401 of a high reflectance.
This substrate 200 is arranged in the cavity 310 of this circuit board 300, and is fixedly installed on heat sink 600 the surface of exposing by a heat-conducting glue 206; The substrate weld pad 202 of this substrate 200 is connected with the metal pad 302 of this circuit board 300 by metal soldered ball 208.These led chip 100 upside-down mountings are arranged on this substrate 200, and the salient point soldered ball 104 of this led chip 100 is connected with the substrate weld pad 202 of this substrate 200, thereby the P utmost point of this led chip 100 and the N utmost point are electrically connected with the conductive layer 306 of this circuit board 300 by its corresponding salient point soldered ball 104, substrate weld pad 202, metal soldered ball 208 and metal pad 302 respectively.This reflector 400 is arranged on the upper surface of the insulating barrier 308 of this circuit board 300, and this led chip 100 is positioned at the receiving space 410 of this reflector 400.The top that this package lens 500 is arranged on this reflector 400 is sealed in this led chip 100 in this receiving space 410.
The concrete material of the reflector layer 401 of this reflector 400 is a silver, or the two Phthalate macromolecule reflectorized materials such as (PET) of aluminium, nickel highly reflective metal, alloy or polyethylene.
The concrete material of the conductive layer 306 of this circuit board 300 is electric conducting materials such as metals such as copper or aluminium, nickel or organic polymer.
The material of the metal level 309 of this circuit board 300 is tin or metals such as gold, silver, nickel.
The substrate 304 of this circuit board 300 is an aluminium base.
The electrode layer 102 on this led chip 100 and the material of salient point soldered ball 104 are single metal material such as lead, tin, gold, silver, nickel or copper or multilayer material or the alloy be made up of above-mentioned single metal material.
These circuit board 300 shapes can be rectangle, circle, polygonal figures.
Below describe the concrete manufacture method of the luminescent device of the utility model embodiment 1 in detail:
Step S1: make led chip 100.Particularly; growth has the extension disk of nitride multilayer gallium on Sapphire Substrate; through sequence of process steps such as photoetching, etching, layer metal deposition and passivation layer protections, on led chip, form the P utmost point and the N utmost point, form electrode layer 102 and salient point soldered ball 104 in regular turn on the surface of the P utmost point and the N utmost point then.This disk cuts into this led chip 100 of simple grain behind grinding and polishing.
Step S2: make substrate 200.Particularly, on this substrate 200, form substrate weld pad 202 by semiconductor fabrication process such as photoetching, deposit, plated films.
Step S3: led chip 100 flip chip bondings are connected on the substrate 200.Flip chip bonding equipment by automation is connected on led chip 100 flip chip bondings one by one on the surface of substrate 200, the flip chip bonding process is actual to be the bonding process of the salient point soldered ball 104 of led chip 100 with substrate weld pad 202, can adopt mode that Reflow Soldering, wave-soldering, hot pressing welding, ultrasonic wire bonding method, thermosonic bonding connect or decide technology with adding hyperacoustic nation after the heating.
Step S4: the upper surface at substrate 304 forms a conductive layer 306 and an insulating barrier 308 in regular turn.Lower surface at this substrate 304 forms a cavity 310 by the via hole technology then, and the degree of depth of this cavity 310 is controlled at just exposes conductive layer 306.
Step S5: the surface of the conductive layer 306 that exposes in this cavity 310 forms metal pad 302.Be specially by surperficial turmeric technology and realize that the material of turmeric is specially metals such as gold, silver, nickel.
Step S6: upside-down mounting is had the substrate 200 of led chip 100 be welded on the lower surface of the conductive layer 306 of cavity 310 interior circuit boards 300 by metal soldered ball 208, concrete grammar can use, the mode that Reflow Soldering, wave-soldering, hot pressing welding, ultrasonic wire bonding method, thermosonic bonding connect or with adding hyperacoustic nation and decide technology after the heating.
Step S7: with circuit board 300 be placed in heat sink on, its method specifically can connect by bolt, heat-conducting glue connects or other jointing materials connect; Simultaneously this substrate 200 by a heat-conducting glue 206 be fixed on this heat sink on.
Step S8: reflector 400 is placed in the insulating barrier upper surface of circuit board 300, and makes led chip 100 be positioned at the center of its receiving space 410.
Step S9: above this reflector 400, form package lens 500 by a glue mode.
With respect to prior art, the P of the led chip in the luminescent device of the present utility model, N electrode link to each other with the substrate weld pad respectively in the mode of upside-down mounting welding, this substrate is arranged in the cavity of circuit board, the substrate weld pad is received on the conductive layer of circuit board by the metal welding ball bonding simultaneously, conductive layer links to each other with external electrode on the circuit board, do not need to beat gold thread, thereby saved the needed material of support and gold thread, reduce cost, while also can be avoided gold thread to be heated stress influence when encapsulation and be out of shape, even fracture, thereby reduce yield of products and reliability.In addition, led chip directly is connected with heat sink by substrate and heat-conducting glue, and the heat that this luminescent device produces can be directly transferred to the heat sink heat radiation of going up by the substrate of LED, shortened heat dissipation channel, heat-sinking capability is strong, prolongs device lifetime, guarantees the high reliability of device.Reflector is placed in the circuit board upper surface, and makes led chip be positioned at the receiving space center, and the inner surface light of reflector has good optical reflection effect, can improve the output intensity of LED device.Circuit board is more flexible with the mode that other electronic components link to each other.
Embodiment 2:
See also Fig. 3, it is the employing COB packaged light emitting device cross-sectional view of the utility model embodiment 2.This embodiment 2 is roughly the same with embodiment 1, and its difference only is: be provided with the led chip 100 of a plurality of upside-down mountings at substrate 200 in the cavity 310 of this circuit board 300.These a plurality of led chips 100 are realized series, parallel or series-parallel connection by the wires design of the conductive layer 306 of this circuit board 300.
Embodiment 3:
See also Fig. 4, it is the employing COB packaged light emitting device cross-sectional view of the utility model embodiment 3.This embodiment 3 is roughly the same with embodiment 1, and its difference only is: be provided with a plurality of cavitys 310 on this circuit board 300, be provided with the led chip 100 of a upside-down mounting at substrate 200 in each cavity 310.Led chip 100 in these a plurality of cavitys 310 is realized series, parallel or series-parallel connection by the wires design of the conductive layer 306 of this circuit board 300.
The foregoing description 2 and embodiment 3 have realized that a plurality of led chips are integrated in an encapsulating structure on the circuit board, and its manufacturing process is identical with the luminescent device of embodiment 1, has higher yields.
The utility model is not limited to above-mentioned execution mode, if various changes of the present utility model or distortion are not broken away from spirit and scope of the present utility model, if these changes and distortion belong within claim of the present utility model and the equivalent technologies scope, then the utility model also is intended to comprise these changes and distortion.
Claims (6)
1. one kind is adopted the COB packaged light emitting device, it is characterized in that: comprise
---at least one led chip, this led chip have a N utmost point and a P utmost point, at surface coverage one electrode layer of this N utmost point and the P utmost point;
---at least one substrate, the upper surface of each substrate are provided with two substrate weld pads, in order to be electrically connected with the N utmost point and the P utmost point of this led chip respectively;
---circuit board, it comprises a substrate, a conductive layer and an insulating barrier, and this substrate has at least one cavity, and upper surface and part that this conductive layer covers this substrate extend to the cavity top, and this insulating barrier covers the upper surface of this conductive layer; This led chip upside-down mounting is on this substrate, and the N utmost point of this led chip is connected with two substrate weld pads of this substrate respectively with the extremely surperficial electrode layer of P; This substrate is arranged in the cavity of this circuit board, and two substrate weld pads of this substrate are connected with the conductive layer of this circuit board in cavity by a metal soldered ball respectively.
2. luminescent device according to claim 1 is characterized in that: comprise that also one is heat sink, this is heat sink to be arranged on the lower surface of this substrate, and the lower surface of this substrate by heat-conducting glue be fixed on this heat sink on.
3. luminescent device according to claim 2, it is characterized in that: also comprise a reflector, the inner wall surface of the receiving space of this reflector is provided with reflector layer, and this reflector is arranged on the upper surface of the insulating barrier of this circuit board, and this led chip is positioned at the receiving space of this reflector.
4. luminescent device according to claim 3 is characterized in that: further comprise a package lens, its top that is arranged on this reflector is sealed in this led chip in the receiving space of reflector.
5. luminescent device according to claim 2, it is characterized in that: this led chip also comprises the salient point soldered ball, it covers the surface of the electrode layer of the N utmost point and the P utmost point, and the N utmost point of this led chip is connected with the substrate weld pad of substrate with the salient point soldered ball by electrode layer respectively with the P utmost point.
6. luminescent device according to claim 2 is characterized in that: this circuit board also comprises a metal pad, and this metal pad is arranged between this metal soldered ball and the conductive layer of this circuit board in cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120086829XU CN202058786U (en) | 2011-03-29 | 2011-03-29 | Luminescent device adopting COB packaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120086829XU CN202058786U (en) | 2011-03-29 | 2011-03-29 | Luminescent device adopting COB packaging |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202058786U true CN202058786U (en) | 2011-11-30 |
Family
ID=45018751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120086829XU Expired - Lifetime CN202058786U (en) | 2011-03-29 | 2011-03-29 | Luminescent device adopting COB packaging |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202058786U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185090A (en) * | 2011-03-29 | 2011-09-14 | 晶科电子（广州）有限公司 | Luminescent device adopting COB (chip on board) packaging and manufacturing method thereof |
| JP2019117837A (en) * | 2017-12-26 | 2019-07-18 | シーシーエス株式会社 | Light-emitting device |
-
2011
- 2011-03-29 CN CN201120086829XU patent/CN202058786U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185090A (en) * | 2011-03-29 | 2011-09-14 | 晶科电子（广州）有限公司 | Luminescent device adopting COB (chip on board) packaging and manufacturing method thereof |
| JP2019117837A (en) * | 2017-12-26 | 2019-07-18 | シーシーエス株式会社 | Light-emitting device |
| JP7007180B2 (en) | 2017-12-26 | 2022-01-24 | シーシーエス株式会社 | Luminescent device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102185090B (en) | Luminescent device adopting COB (chip on board) packaging and manufacturing method thereof | |
| CN102185091B (en) | Light-emitting diode device and manufacturing method thereof | |
| TWI334655B (en) | Light emitting device and production method of light emitting device | |
| JP5698496B2 (en) | Light emitting chip, LED package, backlight for liquid crystal display, liquid crystal display and illumination | |
| US7183588B2 (en) | Light emission device | |
| TWI528508B (en) | High-power light-emitting diode ceramic package manufacturing method | |
| CN203205453U (en) | Semiconductor light-emitting chip and semiconductor lighting lamp | |
| CN101350321A (en) | Method for manufacturing LED directly mounted on a support upside-down | |
| CN201904369U (en) | LED (light emitting diode) surface-mounting package structure based on silicon substrate | |
| CN102610735B (en) | Light-emitting device with thermoelectric separated structure and manufacturing method of light-emitting device | |
| WO2008047933A1 (en) | Package assembly for upper/lower electrode light-emitting diodes and light-emitting device manufacturing method using same | |
| TW201032317A (en) | Light-emitting diode light source module | |
| CN101567411A (en) | Flip-chip integrated encapsulation structure of LED and method thereof | |
| US20120043576A1 (en) | Led package structure | |
| CN101532612A (en) | Method for manufacturing integrated LED chip light source | |
| CN201868429U (en) | Embedded-type encapsulating structure of luminous diode | |
| CN102064247A (en) | Packaging method and packaging structure for embedded light emitting diode | |
| CN201348169Y (en) | White light-emitting diode (LED) integrated array light source encapsulated based on chip-on-board (COB) technology | |
| KR100610275B1 (en) | High power light emitting diode package and its manufacturing method | |
| CN201904368U (en) | LED (light emitting diode) surface-mounting package structure based on silicon substrate integrated with functional circuit | |
| CN204118067U (en) | Directly be packaged in the LED chip encapsulation architecture of radiator | |
| CN105336834A (en) | Circuit-structure-contained mirror-metal-based LED module, production method thereof, and application thereof | |
| CN101777549A (en) | Package module structure of compound semiconductor element and manufacturing method thereof | |
| CN202058786U (en) | Luminescent device adopting COB packaging | |
| CN202205814U (en) | Light-emitting diode device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 511458 Nansha District, Guangzhou, South Ring Road, No. 33, No. Patentee after: GUANGDONG APT ELECTRONICS LTD. Address before: 511458 software building, Nansha Information Technology Park, Nansha District, Guangdong, Guangzhou 101, China Patentee before: APT (Guangzhou) Electronics Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20111130 |