CN202025785U - CIGS solar photoelectric cell - Google Patents
CIGS solar photoelectric cell Download PDFInfo
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- CN202025785U CN202025785U CN2011200177605U CN201120017760U CN202025785U CN 202025785 U CN202025785 U CN 202025785U CN 2011200177605 U CN2011200177605 U CN 2011200177605U CN 201120017760 U CN201120017760 U CN 201120017760U CN 202025785 U CN202025785 U CN 202025785U
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Abstract
The utility model discloses a CIGS (Copper, Indium, Gallium and Selenium) solar photoelectric cell, which comprises a conductive substrate, a CIGS active layer, an n-type semiconductor layer, a window layer, a transparent electrode layer and a collecting electrode, wherein the n-type semiconductor layer is fabricated on the CIGS active layer to form a p-n junction with the CIGS active layer; the window layer is fabricated on the n-type semiconductor layer for protecting the n-type semiconductor layer; the transparent electrode layer is fabricated on the window layer; and the collecting electrode is fabricated on the transparent electrode layer. In the CIGS solar photoelectric cell, the CIGS active layer adopts a three-stage solution method, so that not only the solution preparation method is cheap and fast, but also the component ratio of the CIGS active layer can be optimized, and the photo-electricity conversion efficiency is greatly improved accordingly.
Description
Technical field
The utility model belongs to field of optoelectronic devices, relates to a kind of new copper (Cu) indium (In) gallium (Ga) selenium (Se) and (is called for short: CIGS) thin-film solar cells.
Background technology
Along with being on the rise of energy crisis, regenerative resource more and more is subject to people's attention.And wherein, solar energy is inexhaustible with it, and cleanliness without any pollution becomes the technology of tool potentiality.The silica-based solar technology is the most ripe at present, also is that occupation rate of market is the highest, but is limited by the preparation process of highly energy-consuming, high pollution, makes it can not become optimal heliotechnics.In recent years, the thin film solar technology begins to rise, and has in light weight, advantages such as cost is low, easy installation.CIGS then is most effective in the thin film solar technology (20.1%), and its preparation process adopts three stage sputter/selenizing methods, thereby mainly is in order to create the whole efficiency that V-type band structure and n type surface texture improve device.The V-type level structure has higher external quantum efficiency than general gradual level structure in the long-wavelength region, thereby can improve the short circuit current of device, and also has higher open circuit voltage.And n type surface texture more helps dissociating and exporting of photoproduction exciton, and therefore three stage preparation methods have greatly improved the performance of CIGS device.Be multi-element compounds but, as utilize evaporating deposition technique owing to CIGS, no matter be sputter/selenizing, or coevaporation, the process complexity is all arranged, the problem of difficult scale.The seminar of NANOSOLAR and IBM has developed the technology of utilizing solwution method to prepare the CIGS active membrane respectively recently.This class technology does not need vacuum evaporation equipment, lowers cost of manufacture greatly, and scale easily.Here, we combine the simple and fast and three stage the optimizing structure of solwution method, utilize three stage spin coatings to prepare the CIGS film, are large-scale preparation high conversion efficiency, and the CIGS solar photocell provides possibility cheaply.
The utility model content
At above-mentioned the deficiencies in the prior art, the technical problems to be solved in the utility model is the CIGS thin-film solar cells of new structure and the preparation method of this thin-film solar cells.
For solving the problems of the technologies described above, the utility model adopts following technical scheme:
A kind of CIGS solar photocell, it comprises: conductive substrates; CIGS active layer, this CIGS active layer prepare on described conductive substrates, mainly as light-absorption layer, and the n type semiconductor layer, this n semiconductor layer is produced on the described CIGS active layer, and forms the pn knot with it, can effectively increase dissociating and exporting of photoproduction exciton; Window layer, this Window layer are produced on described n type semiconductor layer and are used for protecting described n type semiconductor layer; Transparent electrode layer, this transparent electrode layer are produced on the described Window layer; Acquisition electrode, this acquisition electrode is produced on the described transparent electrode layer, has the effect of gathering the photoproduction light stream.
Preferably, described conductive substrates is a conductive metal film, and it selects molybdenum, aluminium, titanium, copper or stainless steel for use, and thickness is the 200-2000 nanometer.
Preferably, the thickness of described CIGS active layer is between the 0.5-10 micron.
Preferably, described n N-type semiconductor N layer thickness is cadmium sulfide, zinc sulphide, cadmium selenide, zinc selenide, cadmium telluride, zinc telluridse or other II-VI group ternary compound between 20-200nm.
Preferably, described Window layer material selection zinc oxide or doping zinc-oxide film, doped chemical is aluminium, gallium or cadmium, thickness is the 20-200 nanometer.
Preferably, described transparent electrode layer is indium tin oxide films or the zinc-oxide film of mixing aluminium, gallium, cadmium.
Preferably, described acquisition electrode is selected one or more in nickel, aluminium, gold, silver, copper, titanium, the chromium for use.
Technique scheme has following beneficial effect: the CIGS active layer of this CIGS solar photocell adopts three stage solwution methods not only to have the cheaply advantage efficiently of solution preparation, and can optimize the ratio of component of CIGS active layer, improve photoelectric conversion efficiency greatly.
Above-mentioned explanation only is the general introduction of technical solutions of the utility model, for can clearer understanding technological means of the present utility model, and can be implemented according to the content of specification, below with preferred embodiment of the present utility model and conjunction with figs. describe in detail as after.Embodiment of the present utility model is provided in detail by following examples and accompanying drawing thereof.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present utility model is described in detail.
As shown in Figure 1, be the structural representation of CIGS solar photocell.This device comprises: conductive substrates 1; CIGS active layer 2, this CIGS active layer 2 utilize three stage solwution methods to be produced on the conductive substrates 1; N type semiconductor layer 3, this n type semiconductor layer 3 are to utilize CBD or vacuum deposition method (comprising thermal evaporation, physical vapour deposition (PVD) that sputter etc. are different and chemical gaseous phase depositing process) to be produced on the CIGS active layer 2; Window layer 4; Transparent electrode layer 5; With metal acquisition electrode 6.
Described conductive substrates 1 is a conductive metal film, is generally molybdenum electrode thickness 200-2000 nanometer but is not limited to molybdenum, also comprises other suitable metal materials, as aluminium, titanium, copper and stainless steel etc.It above the conductive substrates 1 the CIGS active layer 2 that adopts solwution method (make a general reference all coating methods, as spin-coating method, spraying process, poor modulus method etc.) preparation.As use spin-coating method, just by controlling the thickness that spin speed, solution concentration and different spin coating number of times can change this CIGS active layer 2, generally the thickness of this resilient coating is between the 0.5-10 micron.N type semiconductor layer 3 above the CIGS active layer 2 is to adopt CBD or pellet Films Prepared with Vacuum Evaporation Deposition, this functional layer is in order to form effective pn knot with cigs layer, thereby improve the separation and the output of photoproduction exciton, the thickness of this n type semiconductor layer 3 is generally between the 20-200 nanometer, this n type semiconductor layer 3 is generally cadmium sulfide (CdS) material, but be not limited to this, also comprise other n N-type semiconductor Ns, for example zinc sulphide, cadmium selenide, zinc selenide, cadmium telluride, zinc telluridse, and other II-VI group ternary compounds.Above the n type semiconductor layer 3 Window layer 4 and transparent electrode layer 5.The material selection zinc oxide of Window layer 4 or doping zinc-oxide film, doped chemical are aluminium, gallium or cadmium, and thickness is the 20-200 nanometer.Transparent electrode layer is indium tin oxide films or the zinc-oxide film of mixing aluminium, gallium, cadmium.Be metal acquisition electrode 6 at last, generally be nickel/aluminium, but be not limited to this, also comprise other metals, comprise gold, silver, copper, titanium, chromium etc.
Being example below with the spin-coating method describes in detail to the preparation method of above-mentioned CIGS solar photocell.
1. the technology of preparation CIGS precursor is as follows:
(1) nanometer precursor: with 12 milliliters OLEYLAMIN, the inidum chloride that copper chloride that 1.5 millis rub and 1.0 millis rub, the gallium chloride that 0.5 milli rubs is put into three neck reaction bulbs of 100 milliliters of volumes.Under argon shield, be warmed up to 130 degree, kept 30 minutes.Then reaction temperature is elevated to 225 degree, and injects 3 milliliters of OLEYLAMINE that contain 1 molar sulphur rapidly.React after 30 minutes, be cooled to 60 degree and add 10 milliliters toluene.Add a milliliter ethanol at last, centrifugation is come out, and is distributed in the toluene precursor as CIGS by desired concn.
(2) solution precursor: prepare four kinds of different precursor earlier, be mixed into final solution precursor according to required different element ratio of components then.Precursor A:0.955 restrains copper sulfide, 0.3848 gram sulphur and 12 milliliters of anhydrous hydrazines; Precursor B:1.8661 restrains indium selenide, 0.3158 gram selenium and 12 milliliters of anhydrous hydrazines; Precursor C:0.4183 restrains gallium, 0.9475 gram selenium and 12 milliliters of anhydrous hydrazines; Precursor D:0.9475 gram selenium and 6 milliliters of anhydrous hydrazines.
2. soda-lime glass is cleaned in cleaning agent repeatedly, and then through deionized water, acetone and aqueous isopropanol soak and ultrasonic each 15 minutes, dry up with nitrogen at last and handle 15 minutes through UV ozone.
3. getting method with vacuum moulding machine prepares about molybdenum electrode 800 nanometers.
4. the solution with certain chemical constituent ratio after will filtering is spin-coated on the metal substrate with 800 rev/mins rotating speed, after the process annealing (150-350 degree), repeat same spin coating process again, after reaching required thickness, the chemical constituent that changes solution again is than carrying out the spin coating of next stage, and its chemical constituent ratio is respectively: In
1-xGa
xSe/CuSe/In
1-xGa
xSe.One is divided into three phases carries out spin coating.Phase I deposition In
1-xGa
xSe nano particle or precursor solution, thickness is the 0.1-10 micron, is total In
1-xGa
xThe 50-99% of Se thickness; Second stage deposition CuSe nano particle or precursor solution, thickness is the 0.1-10 micron; Phase III deposition In
1-xGa
xSe nano particle or precursor solution, thickness is the 0.1-5 micron, is the 1-50% of total In1-xGaxSe thickness.Between the different part of deposition, utilize Se nano particle or precursor solution to carry out selenizing, underlayer temperature is room temperature-600 degree.
After finishing whole spin coatings, high temperature (250-550 degree) was annealed 30 minutes more at last, made the presoma reactive crystallization, formed the continuous CIGS film with V-type level structure.
5. adopt the CBD method to make n type cadmium sulfide layer
6. and then with sputter pellet Films Prepared with Vacuum Evaporation Deposition zinc-oxide film and indium tin oxide transparent electrode.
7. use prepared by heat evaporation nickel/aluminium acquisition electrode at last.
The CIGS active layer of this CIGS solar photocell adopts three stage solwution methods not only to have the cheaply advantage efficiently of solution preparation, and can optimize the ratio of component of CIGS active layer, improves photoelectric conversion efficiency greatly.
More than a kind of automatic installation screw means that the utility model embodiment is provided be described in detail; for one of ordinary skill in the art; thought according to the utility model embodiment; part in specific embodiments and applications all can change; in sum; this description should not be construed as restriction of the present utility model, and all any changes of being made according to the utility model design philosophy are all within protection range of the present utility model.
Claims (7)
1. CIGS solar photocell is characterized in that it comprises:
Conductive substrates;
CIGS active layer, this CIGS active layer prepare on described conductive substrates, mainly as light-absorption layer, and the n type semiconductor layer, this n semiconductor layer is produced on the described CIGS active layer, and forms the pn knot with it, can effectively increase dissociating and exporting of photoproduction exciton;
Window layer, this Window layer are produced on described n type semiconductor layer and are used for protecting described n type semiconductor layer; Transparent electrode layer, this transparent electrode layer are produced on the described Window layer;
Acquisition electrode, this acquisition electrode is produced on the described transparent electrode layer, has the effect of gathering the photoproduction light stream.
2. CIGS solar photocell according to claim 1 is characterized in that: described conductive substrates is a conductive metal film, and it selects molybdenum, aluminium, titanium, copper or stainless steel for use, and thickness is the 200-2000 nanometer.
3. CIGS solar photocell according to claim 1 is characterized in that: the thickness of described CIGS active layer is between the 0.5-10 micron.
4. CIGS solar photocell according to claim 1 is characterized in that: described n N-type semiconductor N layer thickness is cadmium sulfide, zinc sulphide, cadmium selenide, zinc selenide, cadmium telluride or zinc telluridse between 20-200nm.
5. CIGS solar photocell according to claim 1 is characterized in that: described Window layer material selection zinc oxide thickness is the 20-200 nanometer.
6. CIGS solar photocell according to claim 1 is characterized in that: described transparent electrode layer is an indium tin oxide films.
7. CIGS solar photocell according to claim 1 is characterized in that: described acquisition electrode is selected a kind of in nickel, aluminium, gold, silver, copper, titanium, the chromium for use.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011200177605U CN202025785U (en) | 2011-01-20 | 2011-01-20 | CIGS solar photoelectric cell |
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| CN2011200177605U CN202025785U (en) | 2011-01-20 | 2011-01-20 | CIGS solar photoelectric cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163637A (en) * | 2011-01-20 | 2011-08-24 | 苏州瑞晟太阳能科技有限公司 | CIGS (copper-indium-gallium-selenium) solar photocell and preparation method thereof |
| CN102201495A (en) * | 2011-05-04 | 2011-09-28 | 苏州瑞晟太阳能科技有限公司 | CuInGaSe (CIGS) thin-film solar cell prepared by all-solution method |
| CN104157738A (en) * | 2014-08-19 | 2014-11-19 | 苏州瑞晟纳米科技有限公司 | CIGS solar photocell prepared by all-solution method |
-
2011
- 2011-01-20 CN CN2011200177605U patent/CN202025785U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163637A (en) * | 2011-01-20 | 2011-08-24 | 苏州瑞晟太阳能科技有限公司 | CIGS (copper-indium-gallium-selenium) solar photocell and preparation method thereof |
| CN102201495A (en) * | 2011-05-04 | 2011-09-28 | 苏州瑞晟太阳能科技有限公司 | CuInGaSe (CIGS) thin-film solar cell prepared by all-solution method |
| CN104157738A (en) * | 2014-08-19 | 2014-11-19 | 苏州瑞晟纳米科技有限公司 | CIGS solar photocell prepared by all-solution method |
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Address after: Suzhou City, Jiangsu Province, Suzhou Industrial Park 215000 Xinghu Street No. 218 BioBAY building A4 room 214 Patentee after: SUZHOU RAYSOLL NANOTECH CO.,LTD. Address before: Suzhou City, Jiangsu Province, Suzhou Industrial Park 215000 Xinghu Street No. 218 BioBAY building A4 room 214 Patentee before: SUZHOU RUISHENG SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20180205 Address after: 215000 Suzhou high tech Industrial Development Zone, Jiangsu Province, No. 88 lion Road, No. Patentee after: SUZHOU KELIDA GROUP CO.,LTD. Address before: Suzhou City, Jiangsu Province, Suzhou Industrial Park 215000 Xinghu Street No. 218 BioBAY building A4 room 214 Patentee before: SUZHOU RAYSOLL NANOTECH CO.,LTD. |
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Granted publication date: 20111102 Termination date: 20200120 |
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