CN201993440U - Laser characteristic test device - Google Patents
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- CN201993440U CN201993440U CN 201020663765 CN201020663765U CN201993440U CN 201993440 U CN201993440 U CN 201993440U CN 201020663765 CN201020663765 CN 201020663765 CN 201020663765 U CN201020663765 U CN 201020663765U CN 201993440 U CN201993440 U CN 201993440U
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- 238000012360 testing method Methods 0.000 title claims abstract description 191
- 238000001228 spectrum Methods 0.000 claims abstract description 62
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 230000003287 optical effect Effects 0.000 claims abstract description 39
- 230000010287 polarization Effects 0.000 claims abstract description 25
- 238000001514 detection method Methods 0.000 claims abstract description 14
- 230000003595 spectral effect Effects 0.000 claims description 23
- 238000009434 installation Methods 0.000 claims description 17
- 238000003384 imaging method Methods 0.000 claims description 9
- 238000004458 analytical method Methods 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- WTDRDQBEARUVNC-UHFFFAOYSA-N L-Dopa Natural products OC(=O)C(N)CC1=CC=C(O)C(O)=C1 WTDRDQBEARUVNC-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013142 basic testing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- MHUWZNTUIIFHAS-CLFAGFIQSA-N dioleoyl phosphatidic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCC(COP(O)(O)=O)OC(=O)CCCCCCC\C=C/CCCCCCCC MHUWZNTUIIFHAS-CLFAGFIQSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229960004502 levodopa Drugs 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000012353 t test Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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Abstract
The utility model discloses a laser characteristic test device. The device comprises a semiconductor laser driver, a three-dimensional parallel guide rail, a laser temperature control module, an LIV and optical spectrum test module, a polarization test module, a near-field light spot test module, a near-field non-linear test module, a far-field test module, a space optical spectrum test module and a central software processing module. At the same time, a work module can be selected according to needs. The device is used for highly precisely and automatically testing a semiconductor laser, particularly a high-power semiconductor laser, so that the detection cost and the production and manufacturing cost of the semiconductor laser are reduced.
Description
Technical field
The utility model belongs to semiconductor laser field, relates to the characteristic test of semiconductor laser, especially a kind of laser characteristic proving installation.
Background technology
Advantages such as semiconductor laser has that volume is little, in light weight, electro-optical efficiency is high, stable performance, reliability height and life-span are long, become the most rising field in the photoelectricity industry, can be widely used in industries such as communication, computing machine (mainly being data storage and input-output device), video display, manufacturing industry, space flight, aviation, material processed, medical treatment, amusement, scientific research, security protection, military affairs, anti-terrorism, handicraft, demonstration and printing.The performance parameter of noise spectra of semiconductor lasers is tested and characterized is the key of profound understanding laser characteristic, also is simultaneously the important evidence of judging the laser instrument quality; Use laser instrument that only in this way could be correct also prolongs its life-span.Therefore, research and the multiple functional laser characteristic proving installation of development and testing have very important realistic meaning.
The performance parameter of semiconductor laser mainly comprises LIV (power-current-voltage), spectrum, wavelength, thermal resistance, electro-optical efficiency, slope efficient, resistance in series, full width at half maximum (FWHM), 90% energy width (FW90%E), near field hot spot, near field non-linear (" smile " effect), far field, polarization and spatial spectral etc., to the height that the test and the sign of above-mentioned parameter can be passed judgment on laser characteristic, wherein LIV and spectrum are the basic tests of semiconductor laser.
Present some instrument manufacturing companies of developed country in the world, as the Newport company of the U.S., Ilxlightwave company, Keithley company and Canadian Telops company etc., researched and developed semiconductor laser performance parameter test instrument, but the test function of these testing tools is comprehensive inadequately, partial properties that can only noise spectra of semiconductor lasers is tested, as LIV, spectrum, near field and far field.Though domestic have (a Wei Shujun of Shandong University, " development of Superpower semiconductor laser array parameter measurement instrument ", Shandong University's master thesis, 2005.4), Semiconductor institute, Chinese Academy of Sciences, (the Xia Tao of Jilin University, " LD comprehensive parameter measuring system fast ", Jilin University's master thesis, 2006.4), (the Wan Junhua of the Maritime Affairs University Of Dalian, " research of large power semiconductor laser array light distribution characteristic test system ", Maritime Affairs University Of Dalian's master thesis, 2008.5) etc. a few family units developed the semiconductor laser testing tool, but only limit to the LIV of semiconductor laser, spectrum and far field test.
At present, mainly there is following problem in conventional semiconductor laser performance parameter testing instrument:
(1) function singleness: external semiconductor laser test macro does not also still possess polarization test, near field non-linear test and spatial spectral test function.Domestic semiconductor laser test macro then only possesses LIV test and spectrum test function.
(2) measured power is lower: the semiconductor laser that most semiconductor laser performance parameter test system is primarily aimed within the 100W is tested, and full test power also only rests on the multikilowatt level.
(3) the LIV test pattern is single: the LIV test mainly is divided into test of CW (continuous wave output) pattern and the test of QCW (quasi c. w. output) pattern, for most testing tool, can not realize two kinds of test functions simultaneously.
(4) kind of institute's survey semiconductor laser is few: semiconductor laser is of a great variety, present most of testing tools are merely able to a certain or several particular form semiconductor lasers are tested, then can't test for other forms of semiconductor laser, so the kind of institute's survey semiconductor laser is few.
(5) automaticity and precision are low: at present, external semiconductor laser testing tool has been realized the test of robotization and degree of precision, but testing tool is not at home realized automatic test yet fully, and precision is limited.
(6) cost height: though external semiconductor laser testing tool can be realized the test of robotization and degree of precision, the very high so that fetch long price of its cost.
The utility model content
The purpose of this utility model is to overcome the shortcoming of above-mentioned prior art, a kind of test macro that can comprehensively characterize the semiconductor laser characteristic is provided, this system is used for noise spectra of semiconductor lasers, especially the high precision of high-power semiconductor laser and automatic test can reduce the detection and the manufacturing cost of semiconductor laser.
The purpose of this utility model solves by the following technical programs:
This laser characteristic proving installation, comprise an optical table and computer system, it is characterized in that: be fixed with a guide rail on the described optical table, described guide rail is fixed with the laser instrument holder by slide block, described laser instrument holder is provided with the measured laser device, also be provided with the laser temperature control module of control measured laser actuator temperature on the described laser instrument holder, the side of described guide rail is arranged with LIV and the spectrum test module that links to each other with described computer system respectively, the polarization test module, near field hot spot test module, near field non-linear test module, one or more of far field test module and spatial spectral test module; Described laser temperature control module is connected with computer system by semiconductor laser drive.
Above-mentioned laser temperature control module comprises temperature controller, refrigerator and is arranged on temperature sensor on the measured laser device, described temperature sensor is connected with temperature controller respectively with refrigerator, and described refrigerator is arranged on the measured laser device in order to reduce the measured laser actuator temperature.
Above-mentioned LIV and spectrum test module comprise device for testing power and spectrum test device; Described device for testing power is connected with computing machine with the spectrum test device; The luminous power of described device for testing power detection measured laser device and the voltage of measured laser device are with the variation of input current; Described spectrum test device is collected the light that the measured laser device sends, and the spectral characteristic of measured laser device is characterized.
Above-mentioned polarization test module comprises first photodetector, the polarizer and attenuator; Measured laser device and described attenuator, the polarizer and photodetector place on the same straight line successively, the light that the measured laser device sends arrives the polarizer after the attenuator decay, the polarizer can present different probe values on photodetector, photodetector obtains polarization state of light and degree of polarization by the light intensity magnitude that analysis detects.
Above-mentioned near field hot spot test module comprises optical alignment system, optical tubes and CCD imaging system; By optical tubes imaging on the CCD imaging system, the CCD imaging system is handled the power of judging the near field light intensity to the light that the testing laser device sends to the picture that obtains by described optical alignment system collimation back.
Above-mentioned near field non-linear test module comprises cylindrical microlenses, lens combination and CCD camera; The light that the measured laser device sends is presented on the CCD camera after described directional light is exaggerated successively by being collimated into directional light after cylindrical microlenses and the lens combination.
Above-mentioned far field test module comprises adjustable fixedly swingle, second photodetector and stepper motor; Described stepper motor links to each other with the fixing front end of swingle, driving fixedly by stepper motor, swingle rotates in vertical and horizontal direction, the end and the photodetector of described fixedly swingle join, and photodetector moves in the locus when stepper motor is worked, the light intensity of space exploration.
Above-mentioned spatial spectral test module comprises colimated light system, light beam amplification system and spectrum test system; The light that each luminous point of measured laser device sends is by colimated light system and light velocity amplification system, and described spectrum test device is measured the spectrum of each luminous point, then wavelength information is illustrated on the same pictures with the luminous point hot spot.
Further, above-mentioned spatial spectral test module also includes slit, and described slit is arranged on the exit end of light beam multiplying arrangement.
Aforementioned calculation machine system comprises computing machine, on the described computing machine data processing software is installed, described computing machine also is connected with data collecting card and GPIB connecting line, the output terminal of described spectrum test system, second photodetector, beam analysis instrument and first photodetector is connected respectively on the data collecting card, and described CCD camera, device for testing power and spectrum test device are connected with computing machine by the USB connecting line.
The utlity model has following beneficial effect:
Laser characteristic proving installation of the present utility model is by modular design, can realize measurement, for example photoelectric characteristic, volt-ampere characteristic, spectral characteristic, near field characteristic, far-field characteristic, thermal characteristics, polarization characteristic and spatial spectral characteristic etc. to the various characteristics parameter of laser instrument.In addition, in the semiconductor laser test process, can realize accurate mensuration by accurate control laser thermal sediment temperature and cooling water flow to laser spectrum parameter to be measured and thermal resistance parameters.Design of Test System of the present utility model at the laser instrument Installation And Test anchor clamps of the different packing forms of different series, can realize robotization continuous coverage to various semiconductor laser parameters, convenient extensive the detection used.
Description of drawings
Fig. 1 is a structured flowchart of the present utility model;
Fig. 2 is the structural arrangement vertical view of test macro in the utility model preferred embodiment;
Fig. 3 is semiconductor laser LIV test and spectrum test software control interface;
Fig. 4 is the semiconductor laser test report.
Wherein: 1 is optical table; 2 is two-dimentional closed slide; 3 is refrigerator; 4 is the measured laser device; 5 is semiconductor laser drive; 6 is computing machine; 7 is temperature controller; 8 is two-dimension translational guide rail controller; 9 is device for testing power; 10.1 be the first spectrum test device; 10.2 be the second spectrum test device; 11 is attenuator; 12 is the polarizer; 13 is first photodetector; 14.1 be the first optical alignment system; 14.2 be the second optical alignment system; 15 is optical tubes; 16.1 be a CCD camera; 16.2 be the 2nd CCD camera; 17 is light splitting piece; 18 is the beam analysis instrument; 19 is second photodetector; 20 is adjustable fixedly swingle; 21 is stepper motor; 22 is slit; 23 is the light beam multiplying arrangement; 24 is product information typing district; 25 are LIV test control zone; 26 are spectral characteristic test control zone.
Embodiment
Below in conjunction with accompanying drawing the utility model is done and to be described in further detail:
Referring to Fig. 1 and Fig. 2, laser characteristic proving installation of the present utility model, comprise an optical table 1 and a computer system, wherein be fixed with two-dimension translational guide rail 2 on the optical table 1, two-dimension translational guide rail 2 is fixed with the laser instrument holder by slide block, the laser instrument holder is provided with measured laser device 4, also be provided with the laser temperature control module of control measured laser device 4 temperature on the laser instrument holder, the side of two-dimension translational guide rail 2 is arranged with LIV and the spectrum test module that links to each other with computer system respectively, the polarization test module, near field hot spot test module, near field non-linear test module, far field test module and spatial spectral test module.Measured laser device 4 also is connected with computer system by semiconductor laser drive 5.The laser temperature control module includes the temperature controller 7 that is fixed on the optical table 1.By electronic mode, therefore, cooperate its electronic part also to be provided with two-dimension translational guide rail controller 8 during the motion of the slide block on the two-dimension translational guide rail 2
Below introduce in detail structure and the principle of work thereof of forming each module of the utility model:
(1) semiconductor laser drive 5: for measured laser device 4 provides electric current, it is luminous to drive the measured laser device.
(2) the two-dimension translational guide rail 2: by the fixing measured laser device 4 of the anchor clamps on the slide block, drive measured laser device 4 moves at each intermodule in guide rail upper end.
(3) laser temperature control module: comprise temperature controller, refrigerator 3 and be arranged on temperature sensor on the measured laser device 4, temperature sensor is connected with temperature controller respectively with refrigerator 3, and described refrigerator 3 is arranged on the measured laser device 4 in order to reduce measured laser device 4 temperature.This module mainly realizes temperature control and the monitoring to heat loss through conduction N-type semiconductor N laser instrument (measured laser device), it is connected with the anchor clamps of fixed laser, be used to set the working temperature of measured laser device, monitoring and the temperature variation of regulating laser instrument make the working temperature of laser instrument keep constant.
(4) LIV and spectrum test module: mainly comprise the device for testing power 9 and the first spectrum test device 10.1.Device for testing power 9 is connected (can pass through USB line or other connections) with computing machine 6 with the first spectrum test device 10.1.The luminous power of device for testing power 9 detection measured laser devices 4 and the voltage of measured laser device 4 are with the variation of input current.The first spectrum test device 10.1 is collected the light that measured laser devices 4 send, and the spectral characteristic of measured laser device 4 is characterized.(seeing shown in Figure 4).Can be direct detection (power meter direct detection) during the power of test measured laser device 4, also can be to survey (using method measured powers such as integrating sphere and photodetector combination) indirectly.Can get part light during test spectral and test (the mode collection unit beam split by integrating sphere or slit is tested), also can be for whole light are tested.
(5) polarization test module: mainly comprise first photodetector 13, the polarizer 12, attenuator 11, measured laser device 4 places on the same straight line successively with described attenuator 11, the polarizer 12 and first photodetector 13.Its principle of work is: the light that measured laser device 4 sends arrives the polarizer 12 after attenuator 11 decay, the rotation polarizer 12 can present different probe values on first photodetector 13, first photodetector 13 obtains polarization state of light and degree of polarization by the light intensity magnitude that analysis detects.Can use power meter (or imaging system) to replace photodetector during the polarization test; Before failing to reach capacity, photodetector or power meter can not use attenuator; The polarizer can be selected polaroid or have the prism of polarization, as Nicol, lithium columbate crystal etc., also can adopt the beam split mode to test.
(6) near field hot spot test module: mainly comprise the first optical alignment system 14.1, optical tubes 15 and a CCD camera 16.1.The light that measured laser device 4 sends by light imaging on a CCD camera 16.1 that optical tubes 15 makes semiconductor laser crust bar or folds each luminous point in the battle array, utilizes reversibility of optical path to present the luminous intensity of each luminous point by the described first optical alignment system 14.1 collimation backs.The near field light intensity test can use imaging or shooting style the picture that obtains to be handled the power of judging the near field light intensity; Connect power meter or photodetector after also can adopting narrow and small pore, move the position of narrow and small pore and survey, judge the power of near field light intensity by the power that records.
(7) near field non-linear test module: comprise lens combination and the 2nd CCD camera 16.2, lens combination is made up of cylindrical microlenses and a series of lens.With a series of lens the optical alignment that semiconductor laser sends is become directional light by cylindrical microlenses, after suitably amplifying, the arranging situation of each luminous point is presented on the 2nd CCD camera 16.2 the most at last, and obtains the concrete numerical value of smile by software analysis.
(8) far field test module: mainly comprise the adjustable fixedly swingle 20 of direction, second photodetector 19 and stepper motor 21.Stepper motor 21 links to each other with the front end of adjustable fixedly swingle 20, driving adjustable fixedly swingle 20 by stepper motor 21 rotates in vertical and horizontal direction, the end of adjustable fixedly swingle 20 and second photodetector 19 join, second photodetector 19 moves the light intensity of space exploration in the locus when stepper motor 21 work.
(9) spatial spectral test module: mainly comprise the second optical alignment system 14.2, light beam multiplying arrangement 23, slit 22 and the second spectrum test device 10.2.After the light that each luminous point of measured laser device 4 sends passes through the second optical alignment system 14.2 and light beam multiplying arrangement 23, make the light transmission slit 22 of each luminous point of semiconductor laser (being the measured laser device) crust bar again, measure the spectrum of each luminous point again with the second spectrum test device 10.2, then wavelength information is illustrated on the same pictures with the luminous point hot spot.Also can adopt light beam amplification system, optical patchcord and spectrum test device to realize the test of each luminous point spectrum.
(10) central software processing module: computer system promptly described in the utility model mainly comprises computing machine 6, data processing software, data collecting card, GPIB capture card and GPIB connecting line etc.The output terminal of the second spectrum test device 10.2, second photodetector 19 and first photodetector 13 is connected respectively on the data collecting card, described first and second CCD camera 16.1,16.2, device for testing power 9 be connected with computing machine 6 with first and second spectrum test device 10.1,10.2 (can pass through USB connecting line or other available communication lines).Calculate and analyze the final integrated and control of robotization that realizes computer hardware by data processing software.
Fig. 2 is that the utility model provides a kind of preferred embodiment, and it has showed the reasonable distribution of each module of the present utility model on optical table 1.From left to right be followed successively by LIV test and spectrum test module, polarization test module, near field hot spot test module, the near field is non-linear and energy test module, far field test module, spatial spectral test module.
Fig. 3 is the surface chart of the data processing software that matches with above-mentioned hardware, comprising product information typing district 24, LIV test control zone 25 and spectral characteristic test control zone 26.The information of product information typing district 24 typings of wanting has aging number of times, part number, pipe number, operator.LIV test control zone 25 increases by setting rated power and the electric current step, click the electrical characteristics testing button, test curve and test result are presented on this zone, and the test curve that is presented is power-current curve, voltage-to-current curve, conversion efficiency-current curve; The test result that is presented has: rated current, threshold current, slope efficient, specified conversion efficiency, maximum conversion efficiency, rated voltage, resistance in series.The spectral scan button is clicked by setting wavelength coverage in spectral characteristic test control zone 26, will present spectrum test curve and spectrum test result on this zone, and the curve of spectrum that wherein presents is the sign of laser spectrum; The spectrum test result who is presented mainly contains peak wavelength, centre wavelength, halfwidth degree and 90% energy width.
Fig. 4 is the semiconductor laser test report that the utility model generates, and mainly comprises LIV family curve and test result thereof and spectrum test curve and test result thereof.
The semiconductor laser testing process is: at first measured laser device 4 is fixed on the platform that has the TEC temperature control, the platform lower end is fixed on the slide block, slide block and two-dimentional closed slide 2 join, open accurately control temperature of temperature controller 7 simultaneously, by D translation guide rail controller 8 control measured laser devices 4 successively through LIV and spectrum test module, polarization test module, near field light intensity test module, the near field is non-linear and energy test module, far field test module, spatial spectral test module carry out the test of each parameter.
When mobile measured laser device 4 process LIV and spectrum test module, make the illumination of measured laser device 4 be mapped to the device for testing power 9 and the first spectrum test device 10.1, survey the power and the spectrum of measured laser device 4.
Measured laser device 4 moves when arriving the polarization test module, after at first decaying by attenuator 11, light is reached on first photodetector 13 at last by the polarizer 12 again and carry out optical power detecting, in detection process, detect the minimum and maximum value of light, calculate the polarisation of light degree by the rotation polarizer 12.
When shelves measured laser device 4 moved near field hot spot test module, light at first collimated by 14.1 pairs of light beams of the first optical alignment system, arrived a CCD camera 16.1 imagings by optical tubes 15 backs.In this process, make a CCD camera 16.1 present distinct image by the diaphragm of adjusting in the optical tubes 15.
When measured laser device 4 moves near field non-linear test module, at first become directional light to be divided into two-beam by light splitting piece 17 again optical alignment by the second optical alignment system 14.2, a branch of light is directly got to beam analysis instrument 18, and light intensity is tested; It is non-linear that another bundle light then presents the near field by optical tubes 15 backs at the 2nd CCD camera 1.26.
When measured laser device 4 moves to the far field test module, by second photodetector, 19 levels and the movement in vertical direction on the adjustable fixedly swingle 20 of stepper motor 21 controls, the light distribution spatially of detectable measured laser device 4 each points.
When measured laser device 4 moves to the spatial spectral test module, at first realize the parallel output of light by the second optical alignment system 14.2, by light beam multiplying arrangement 23 light that each luminous point sends is distinguished again, by slit 22, slit 22 rear ends are surveyed the spectrum of each luminous point successively by the second spectrum test device 10.2 successively.
Test macro of the present utility model mainly possesses following function:
(1) LIV test function: can realize CW and QCW test function, characterize voltage-to-current curve, power-current curve, the electro-optical efficiency-current curve of semiconductor laser comprehensively, and calculate threshold current, slope efficient and electro-optical efficiency automatically.Measuring accuracy under the CW condition is 0.01W, and maximum detection power reaches thousands of watts; Maximum detection power reaches tens thousand of watts under the QCW condition, and measuring accuracy is 0.01W.
(2) spectrum test function: can realize the spectrum test under the different capacity, can monitor peak wavelength, centre wavelength, full width at half maximum, 90% energy width automatically, and can calculate the thermal resistance of laser instrument automatically according to the LIV test data.The wavelength coverage that can test is 400nm~1800nm, and precision reaches 0.01nm.
(3) polarization test function: can characterize the polarization state and the polarization direction of semiconductor laser, the polarization measuring accuracy reaches 1%.
(4) near field hot spot test function: be primarily aimed at crust bar (Bar) and the test of folded battle array (DOPA bar) semiconductor laser, above the relative size that can monitor the whether luminous and luminous intensity of each luminous point of laser instrument under the current drives more than the threshold value.
(5) near field non-linear test function: " smile " phenomenon of main monitoring crust bar (Bar) semiconductor laser, and provide the concrete numerical value of " smile ", for beam shaping and optical fiber coupling provide foundation.
(6) far field test function: monitoring mainly is the distribution situation in spatial vertical direction and horizontal direction, and quantitatively provides the angle of divergence and light distribution apart from the light distribution of the space face of semiconductor laser light-emitting area certain distance.
(7) spatial spectral test function: can the spectrum of crust bar (Bar) and folded each luminous point of array semiconductor laser be characterized on space scale.
(8) software control function (software interface is seen shown in Figure 3): by software control laser performance parameter test system, automatic collecting test data, and finish analysis to institute's image data, depict test curve, and the parameter that calculates test automatically, and output and printing test report (seeing shown in Figure 4).
Claims (10)
1. laser characteristic proving installation, it is characterized in that: comprise platform (1), on described platform (1) guide rail is set, guide rail is provided with the slide block in order to fixed laser, is provided with the laser instrument detection module that is used for detection laser at the side of guide rail.
2. laser characteristic proving installation according to claim 1, it is characterized in that: described guide rail is two-dimension translational guide rail (2), described two-dimension translational guide rail (2) is fixed with the laser instrument holder by slide block, described laser instrument holder is provided with measured laser device (4), also be provided with the laser temperature control module of control measured laser device (4) temperature on the described laser instrument holder, the side of described two-dimension translational guide rail (2) is arranged with as laser instrument detection module and LIV that links to each other with computer system respectively and spectrum test module, the polarization test module, near field hot spot test module, near field non-linear test module, one or more of far field test module and spatial spectral test module; Described measured laser device (4) is connected with computer system by semiconductor laser drive (5).
3. laser characteristic proving installation according to claim 2, it is characterized in that: described laser temperature control module comprises temperature controller, refrigerator (3) and is arranged on temperature sensor on the measured laser device (4), described temperature sensor is connected with temperature controller respectively with refrigerator (3), and described refrigerator (3) is arranged on measured laser device (4) and goes up in order to reduce measured laser device (4) temperature.
4. laser characteristic proving installation according to claim 2 is characterized in that: described LIV and spectrum test module comprise the device for testing power (9) and the first spectrum test device (10.1); Described device for testing power (9) is connected with computing machine with the first spectrum test device (10.1); The luminous power of described device for testing power (9) detection measured laser device (4) and the voltage of measured laser device (4) are with the variation of input current; The described first spectrum test device (10.1) is collected the light that measured laser device (4) sends, and the spectral characteristic of measured laser device (4) is characterized.
5. laser characteristic proving installation according to claim 2 is characterized in that: described polarization test module comprises first photodetector (13), the polarizer (12) and attenuator (11); Measured laser device (4) places on the same straight line successively with described attenuator (11), the polarizer (12) and first photodetector (13), the light that measured laser device (4) sends arrives the polarizer (12) after attenuator (11) decay, the polarizer (12) can present different probe values on first photodetector (13), first photodetector (13) obtains polarization state of light and degree of polarization by the light intensity magnitude that analysis detects.
6. laser characteristic proving installation according to claim 2 is characterized in that: described near field hot spot test module comprises the first optical alignment system (14.1), optical tubes (15) and a CCD camera (16.1); The light that measured laser device (4) sends is gone up imaging by optical tubes (15) at a CCD camera (16.1) by the described first optical alignment system (14.1) collimation back, and the power of judging the near field light intensity handled the picture that obtains by a CCD camera (16.1).
7. laser characteristic proving installation according to claim 2 is characterized in that: described near field non-linear test module comprises lens combination and the 2nd CCD camera (16.2); The light that measured laser device (4) sends scioptics system successively is collimated into directional light, is presented on after this directional light is exaggerated on the 2nd CCD camera (16.2).
8. laser characteristic proving installation according to claim 2 is characterized in that: described far field test module comprises adjustable fixedly swingle (20), second photodetector (19) and stepper motor (21); Described stepper motor (21) links to each other with the front end of adjustable fixedly swingle (20), driving adjustable fixedly swingle (20) by stepper motor (21) rotates in vertical and horizontal direction, the end of described adjustable fixedly swingle (20) and second photodetector (19) join, second photodetector (19) moves the light intensity of space exploration in the locus when stepper motor (21) is worked.
9. laser characteristic proving installation according to claim 2 is characterized in that: described spatial spectral test module comprises the second optical alignment system (14.2), light beam multiplying arrangement (23) and the second spectrum test device (10.2); After the light that each luminous point of measured laser device (4) sends passes through the second optical alignment system (14.2) and light beam multiplying arrangement (23), the described second spectrum test device (10.2) is measured the spectrum of each luminous point, then wavelength information is illustrated on the same pictures with the luminous point hot spot.
10. according to each described laser characteristic proving installation among the claim 2-9, it is characterized in that: described computer system comprises computing machine (6), described computing machine is equipped with data processing software on (6), described computing machine (6) also is connected with data collecting card, GPIB capture card and GPIB connecting line, the described second spectrum test device (10.2), the output terminal of second photodetector (19) and first photodetector (13) is connected respectively on the data collecting card, and described first, two CCD cameras (16.1,16.2), device for testing power (9) and first, two spectrum test devices (10.1,10.2) be connected with computing machine (6).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201020663765 CN201993440U (en) | 2010-12-16 | 2010-12-16 | Laser characteristic test device |
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Application Number | Priority Date | Filing Date | Title |
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CN 201020663765 CN201993440U (en) | 2010-12-16 | 2010-12-16 | Laser characteristic test device |
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CN201993440U true CN201993440U (en) | 2011-09-28 |
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CN103162823A (en) * | 2013-03-07 | 2013-06-19 | 中国电子科技集团公司第十一研究所 | Multi-station full automatic laser power measuring method and system |
CN104713704A (en) * | 2013-12-13 | 2015-06-17 | 富士通株式会社 | Semiconductor laser device, optical amplifier, and method of detecting a sign of sudden failure of semiconductor laser device |
CN104880660A (en) * | 2015-05-26 | 2015-09-02 | 徐新权 | Semiconductor characteristic parameter comprehensive test equipment |
CN107167301A (en) * | 2017-07-11 | 2017-09-15 | 中国人民解放军国防科学技术大学 | The method for evaluating laser beam quality Improvement |
CN108051182A (en) * | 2017-11-07 | 2018-05-18 | 扬州莱达光电技术有限公司 | A kind of laser subsystem integral test system |
CN109141834A (en) * | 2018-10-30 | 2019-01-04 | 深圳市杰普特光电股份有限公司 | Laser detector and laser detection control method |
CN110749421A (en) * | 2018-07-24 | 2020-02-04 | 深圳市矽电半导体设备有限公司 | Luminescent device testing integrated machine |
CN111624456A (en) * | 2020-05-06 | 2020-09-04 | 武汉电信器件有限公司 | Test system of laser |
CN111880080A (en) * | 2020-07-31 | 2020-11-03 | 苏州猎奇智能设备有限公司 | Chip photoelectric testing mechanism and testing method thereof |
CN112254931A (en) * | 2020-09-30 | 2021-01-22 | 武汉衡易科技有限公司 | Automatic test equipment for laser |
CN112433125A (en) * | 2020-12-22 | 2021-03-02 | 北京遥测技术研究所 | Aging screening test system and method for laser diode array |
CN112763189A (en) * | 2020-12-24 | 2021-05-07 | 松山湖材料实验室 | Measuring device for EBCMOS resolution parameter |
CN112880979A (en) * | 2021-01-19 | 2021-06-01 | 苏州长光华芯光电技术股份有限公司 | Double-station device for testing luminous chip |
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CN113885412A (en) * | 2021-12-08 | 2022-01-04 | 西安奇芯光电科技有限公司 | Double closed-loop control structure for realizing stable output of laser and MRR |
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CN103162823B (en) * | 2013-03-07 | 2014-11-26 | 中国电子科技集团公司第十一研究所 | Multi-station full automatic laser power measuring method and system |
CN103162823A (en) * | 2013-03-07 | 2013-06-19 | 中国电子科技集团公司第十一研究所 | Multi-station full automatic laser power measuring method and system |
CN104713704A (en) * | 2013-12-13 | 2015-06-17 | 富士通株式会社 | Semiconductor laser device, optical amplifier, and method of detecting a sign of sudden failure of semiconductor laser device |
CN104880660A (en) * | 2015-05-26 | 2015-09-02 | 徐新权 | Semiconductor characteristic parameter comprehensive test equipment |
CN107167301A (en) * | 2017-07-11 | 2017-09-15 | 中国人民解放军国防科学技术大学 | The method for evaluating laser beam quality Improvement |
CN108051182B (en) * | 2017-11-07 | 2020-02-21 | 扬州科莱光电技术有限公司 | A kind of laser subsystem comprehensive test equipment |
CN108051182A (en) * | 2017-11-07 | 2018-05-18 | 扬州莱达光电技术有限公司 | A kind of laser subsystem integral test system |
CN110749421A (en) * | 2018-07-24 | 2020-02-04 | 深圳市矽电半导体设备有限公司 | Luminescent device testing integrated machine |
CN109141834A (en) * | 2018-10-30 | 2019-01-04 | 深圳市杰普特光电股份有限公司 | Laser detector and laser detection control method |
TWI748667B (en) * | 2019-12-13 | 2021-12-01 | 旺矽科技股份有限公司 | Optical inspection system |
US11346789B2 (en) * | 2019-12-13 | 2022-05-31 | Mpi Corporation | Optical inspection system |
CN111624456A (en) * | 2020-05-06 | 2020-09-04 | 武汉电信器件有限公司 | Test system of laser |
CN111880080A (en) * | 2020-07-31 | 2020-11-03 | 苏州猎奇智能设备有限公司 | Chip photoelectric testing mechanism and testing method thereof |
CN111880080B (en) * | 2020-07-31 | 2023-11-24 | 苏州猎奇智能设备有限公司 | A chip photoelectric testing mechanism and its testing method |
CN112254931A (en) * | 2020-09-30 | 2021-01-22 | 武汉衡易科技有限公司 | Automatic test equipment for laser |
CN112433125A (en) * | 2020-12-22 | 2021-03-02 | 北京遥测技术研究所 | Aging screening test system and method for laser diode array |
CN112433125B (en) * | 2020-12-22 | 2023-09-05 | 北京遥测技术研究所 | Aging screening test system and method for laser diode array |
CN112763189A (en) * | 2020-12-24 | 2021-05-07 | 松山湖材料实验室 | Measuring device for EBCMOS resolution parameter |
CN112880979A (en) * | 2021-01-19 | 2021-06-01 | 苏州长光华芯光电技术股份有限公司 | Double-station device for testing luminous chip |
CN112880979B (en) * | 2021-01-19 | 2023-11-28 | 苏州长光华芯光电技术股份有限公司 | Double-station device for testing light-emitting chip |
CN112909726A (en) * | 2021-01-20 | 2021-06-04 | 苏州长光华芯光电技术股份有限公司 | Multifunctional testing device for laser chip |
CN113885412A (en) * | 2021-12-08 | 2022-01-04 | 西安奇芯光电科技有限公司 | Double closed-loop control structure for realizing stable output of laser and MRR |
CN113885412B (en) * | 2021-12-08 | 2022-03-29 | 西安奇芯光电科技有限公司 | Double closed-loop control structure for realizing stable output of laser and MRR |
CN116007898A (en) * | 2022-12-13 | 2023-04-25 | 上海菲莱测试技术有限公司 | A VCSEL Array Laser Comprehensive Testing System |
CN117595046A (en) * | 2024-01-19 | 2024-02-23 | 天津凯普林光电科技有限公司 | Laser output conversion device and test platform |
CN117595046B (en) * | 2024-01-19 | 2024-05-28 | 天津凯普林光电科技有限公司 | Laser output conversion device and test platform |
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