CN201805367U - Inductive energy storage microsecond level high-power pulse current source - Google Patents
Inductive energy storage microsecond level high-power pulse current source Download PDFInfo
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- CN201805367U CN201805367U CN2010205090529U CN201020509052U CN201805367U CN 201805367 U CN201805367 U CN 201805367U CN 2010205090529 U CN2010205090529 U CN 2010205090529U CN 201020509052 U CN201020509052 U CN 201020509052U CN 201805367 U CN201805367 U CN 201805367U
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- effect transistor
- field effect
- current source
- pulse current
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- 230000001939 inductive effect Effects 0.000 title claims abstract description 24
- 238000004146 energy storage Methods 0.000 title claims abstract description 15
- 230000005669 field effect Effects 0.000 claims description 42
- 230000006698 induction Effects 0.000 claims description 9
- 230000002459 sustained effect Effects 0.000 claims description 8
- 230000005284 excitation Effects 0.000 abstract description 5
- 238000007599 discharging Methods 0.000 abstract 2
- 238000007667 floating Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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Abstract
The utility model relates to an inductive energy storage microsecond level high-power pulse current source comprising an inductive charging circuit, an inductive discharging circuit and a clamping circuit; the inductive charging circuit is a serial loop comprising an excitation current source V2, an inductor L and a switching tube; the inductive discharging circuit is a serial loop comprising a load, a fly-wheel current diode D1 and an inductor L; and the clamping circuit is spanned on the inductive charging circuit. In the utility model, a high power pulse current source with controllable current can be generated on the negative resistance load, and the striking voltage is controllable; and the high power pulse current source has excellent constant current characteristic, and capability of quickly generating response to plasma arc, thereby realizing the quick switching between arc striking and constant current.
Description
Technical field
The utility model relates to a kind of current source, especially a kind of inductive energy-storage microsecond-grade high-power pulse current source.
Background technology
At present, high-energy physics, fusion research field are extensive use of high-voltage pulse power source, particularly for the load of ion source character, because its voltage-current characteristic is a negative resistance character, and the physical process of plasma discharge is at the weak point of tens nanosecond orders, both require power-supply system that good steady-state current characteristic is arranged, and required it to possess the dynamic response characteristic that is exceedingly fast again.
Traditional high-voltage pulse power source generally adopts MARX generator or PFN to produce high-voltage pulse output, and they all are voltage source output, do not have good electric current output characteristic.Also there is at present employing to realize pulse current output, but only limits to the response time of the pulsewidth and the hundred microsecond levels of Millisecond, can't satisfy the requirement of fast pulse based on the high frequency electric source of fast current feedback.
The utility model content
The purpose of this utility model is to provide a kind of have good constant-current characteristics, short inductive energy-storage microsecond-grade high-power pulse current source of response time.
For achieving the above object, the utility model has adopted following technical scheme: a kind of inductive energy-storage microsecond-grade high-power pulse current source, comprise induction charging circuit, inductive discharge circuit and clamp circuit, the series loop that described induction charging circuit is made up of field power supply V2, inductance L and switching tube, the series loop that described inductive discharge circuit is made up of load, sustained diode 1 and inductance L, described clamp circuit is connected across on the induction charging circuit.
As shown from the above technical solution, the utility model is under the excitation of the trigger impulse that field power supply V2 sends, to the inductance L energy storage, the electric current of inductance L is linear to rise, when the electric current of inductance L rises to set point by switching tube, switching tube turn-offs, thereby the electric current of inductance L discharges to load through sustained diode 1, if load presents high-impedance state, then output voltage is by the clamp circuit nip, treat high-voltage arc strike success, the electric current of the inductance L load of flowing through.The utility model can produce the high power pulsed source of controlled current in the negative resistance load, and striking voltage can be regulated; The utility model not only has good constant-current characteristics, and article on plasma body arc produces response rapidly, realizes the supper-fast switching of striking and constant current.
Description of drawings
Fig. 1 is circuit theory diagrams of the present utility model.
Embodiment
A kind of inductive energy-storage microsecond-grade high-power pulse current source, comprise induction charging circuit 1, inductive discharge circuit and clamp circuit 2, the series loop that described induction charging circuit 1 is made up of field power supply V2, inductance L and switching tube, field power supply V2 is that inductance L is injected magnetic field energy.The series loop that described inductive discharge circuit is made up of load, sustained diode 1 and inductance L, described clamp circuit 2 is connected across on the induction charging circuit 1, as shown in Figure 1.Described switching tube comprises field effect transistor S1, and the field effect transistor S2 that is composed in series by a plurality of field effect transistor, in the utility model, described field effect transistor S2 is in series by 3～5 field effect transistor, and field power supply V2, switching tube S1, inductance L and field effect transistor S2 form series loop.Field effect transistor S1 is used to control the size of inductance L energy storage, field effect transistor S2 when closure and field effect transistor S1 be the inductance L excitation jointly, the inductance L energy discharges to load during shutoff.
As shown in Figure 1, the positive pole of described field power supply V2 links to each other with the drain electrode of field effect transistor S1, the grid of field effect transistor S1 connects and is used to control field effect transistor S1 shutoff or closed drive circuit, the source electrode of field effect transistor S1 connects an end of inductance L, the drain electrode of another termination field effect transistor S2 of inductance L, the grid of field effect transistor S2 connects and is used to control field effect transistor S2 shutoff or closed drive circuit, and the source electrode of field effect transistor S2 connects the negative pole of field power supply V2.Described load is the load of negative resistance, as plasma arcs, plasma load is attempted by on the field effect transistor S2, the negative pole of described sustained diode 1 is connected between the source electrode and inductance L of field effect transistor S1, and the positive pole of sustained diode 1 is connected between the source electrode of the negative pole of field power supply V2 and field effect transistor S2.Described clamp circuit 2 comprises adjustable clamping voltage source V1, adjustable clamping voltage source V1 is clamped within the controlled range floating voltage of pulse current source, the positive pole of adjustable clamping voltage source V1 connects the negative pole of clamping diode D2, the positive pole of clamping diode D2 connects the drain electrode of field effect transistor S2, and the negative pole of described adjustable clamping voltage source V1 connects the negative pole of field power supply V2.Clamping diode D2 cooperates adjustable clamping voltage source V1 that output voltage is carried out clamp when output is unloaded.
When work, field effect transistor S2 is in normally off, export by short circuit at ordinary times, so the no-output electric current and voltage.When driving pulse arrives, field power supply V2 is the inductance L excitation by field effect transistor S1 and field effect transistor S2, the electric current of inductance L is therefore linear to rise, excitation time through a few tens of milliseconds, when the electric current of inductance L arrives the pulse current peak of setting, field effect transistor S2 and field effect transistor S2 disconnect simultaneously, the high pressure that inductance L induces is by adjustable clamping voltage source V1 and clamping diode D2 institute clamp, when the high-voltage arc strike success, the load of flowing through of the electric current of inductance L, be plasma, keep the plasma arcs in the pulse period.Before striking, load equivalent is unloaded, and then the electric current of inductance L is back to voltage source by clamping diode D2, and clamping voltage is adjustable, thereby makes that the output floating voltage is adjustable continuously, and after the striking, load is low resistance state, and clamping diode D2 ends.
Claims (6)
1. inductive energy-storage microsecond-grade high-power pulse current source, it is characterized in that: comprise induction charging circuit (1), inductive discharge circuit and clamp circuit (2), the series loop that described induction charging circuit (1) is made up of field power supply V2, inductance L and switching tube, the series loop that described inductive discharge circuit is made up of load, sustained diode 1 and inductance L, described clamp circuit (2) is connected across on the induction charging circuit (1).
2. inductive energy-storage microsecond-grade high-power pulse current source according to claim 1, it is characterized in that: described switching tube comprises field effect transistor S1, and the field effect transistor S2 that is composed in series by a plurality of field effect transistor, field power supply V2, switching tube S1, inductance L and field effect transistor S2 form series loop.
3. inductive energy-storage microsecond-grade high-power pulse current source according to claim 2, it is characterized in that: the positive pole of described field power supply V2 links to each other with the drain electrode of field effect transistor S1, the grid of field effect transistor S1 connects drive circuit, the source electrode of field effect transistor S1 connects an end of inductance L, the drain electrode of another termination field effect transistor S2 of inductance L, the grid of field effect transistor S2 connects drive circuit, and the source electrode of field effect transistor S2 connects the negative pole of field power supply V2.
4. inductive energy-storage microsecond-grade high-power pulse current source according to claim 1 and 2, it is characterized in that: described load is a plasma, plasma is attempted by on the field effect transistor S2, the negative pole of described sustained diode 1 is connected between the source electrode and inductance L of field effect transistor S1, and the positive pole of sustained diode 1 is connected between the source electrode of the negative pole of field power supply V2 and field effect transistor S2.
5. inductive energy-storage microsecond-grade high-power pulse current source according to claim 1 and 2, it is characterized in that: described clamp circuit (2) comprises adjustable clamping voltage source V1, the positive pole of adjustable clamping voltage source V1 connects the negative pole of clamping diode D2, the positive pole of clamping diode D2 connects the drain electrode of field effect transistor S2, and the negative pole of described adjustable clamping voltage source V1 connects the negative pole of field power supply V2.
6. inductive energy-storage microsecond-grade high-power pulse current source according to claim 2 is characterized in that: described field effect transistor S2 is in series by 3～5 field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205090529U CN201805367U (en) | 2010-08-24 | 2010-08-24 | Inductive energy storage microsecond level high-power pulse current source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205090529U CN201805367U (en) | 2010-08-24 | 2010-08-24 | Inductive energy storage microsecond level high-power pulse current source |
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| Publication Number | Publication Date |
|---|---|
| CN201805367U true CN201805367U (en) | 2011-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205090529U Expired - Fee Related CN201805367U (en) | 2010-08-24 | 2010-08-24 | Inductive energy storage microsecond level high-power pulse current source |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924490A (en) * | 2010-08-24 | 2010-12-22 | 合肥华耀电子工业有限公司 | Inductive energy-storage microsecond-grade high-power pulse current source |
| CN103248263A (en) * | 2012-02-09 | 2013-08-14 | 中兴通讯股份有限公司 | PWM DC pulse circuit, coating circuit and film coating method |
| CN103401468A (en) * | 2013-07-29 | 2013-11-20 | 深圳市航天新源科技有限公司 | Plasma arc starting circuit |
-
2010
- 2010-08-24 CN CN2010205090529U patent/CN201805367U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924490A (en) * | 2010-08-24 | 2010-12-22 | 合肥华耀电子工业有限公司 | Inductive energy-storage microsecond-grade high-power pulse current source |
| CN101924490B (en) * | 2010-08-24 | 2013-06-26 | 合肥华耀电子工业有限公司 | Inductive energy-storage microsecond-grade high-power pulse current source |
| CN103248263A (en) * | 2012-02-09 | 2013-08-14 | 中兴通讯股份有限公司 | PWM DC pulse circuit, coating circuit and film coating method |
| CN103248263B (en) * | 2012-02-09 | 2017-02-15 | 中兴通讯股份有限公司 | PWM DC pulse circuit, coating circuit and film coating method |
| CN103401468A (en) * | 2013-07-29 | 2013-11-20 | 深圳市航天新源科技有限公司 | Plasma arc starting circuit |
| CN103401468B (en) * | 2013-07-29 | 2016-02-17 | 深圳市航天新源科技有限公司 | A kind of plasma arc striking circuit |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110420 Termination date: 20150824 |
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| EXPY | Termination of patent right or utility model |