CN201667332U - Semiconductor power module - Google Patents
Semiconductor power module Download PDFInfo
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- CN201667332U CN201667332U CN2010201501423U CN201020150142U CN201667332U CN 201667332 U CN201667332 U CN 201667332U CN 2010201501423 U CN2010201501423 U CN 2010201501423U CN 201020150142 U CN201020150142 U CN 201020150142U CN 201667332 U CN201667332 U CN 201667332U
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Abstract
The utility model provides a semiconductor power module comprising a radiator and a metal-clad ceramic substrate installed thereon. The metal-clad ceramic substrate is a substrate with a forward-surface and a backward surface and the forward-surface is provided with a forward-surface metal plate; the backward surface is provided with a backward surface metal plate. The semiconductor component of the utility model is welded on the forward surface metal plate and the casing of the utility model is internally installed and sealed in the semiconductor component. The radiator is provided with a cooling bath at one end of radiator facing the backward surface metal plate. The backward surface metal plate is fixed on the radiator and sealed in the cooling bath. The semiconductor power module disclosed hereby has a simple structure and has the advantage of radiating heat in a fast way while effectively easing the thermal stress caused in the cool and hot cycle process of the power module, therefore, making the power module more reliable.
Description
Technical field
The utility model relates to semiconductor applications, in particular, relates to a kind of semi-conductor power module.
Background technology
(for example: the performance IGBT power model) can be affected owing to the heat that the semiconductor element energising produces semi-conductor power module, thereby, the cermet substrate that covers that semiconductor element will be installed usually is fixed on the radiator (or heating panel), and carries out efficiently radiates heat by radiator.When semiconductor element was worked, the heat of being sent by semiconductor element was passed in the process of radiator, and the temperature of covering cermet substrate and radiator uprises, and produced thermal expansion; When semiconductor element stops adstante febre, the temperature of covering in cermet substrate and the radiator is reduced to room temperature, produces cold contraction.If will cover the cermet substrate is directly installed on the radiator, in the cold cycling process, since cover the cermet substrate (comprising: parts such as ceramic substrate, front metal plate and back metal plate) and the difference of the thermal linear expansion coefficient of radiator can produce thermal stress, and cause radiator, cover that the cermet substrate deforms or produce division at both combination interface places, thereby need radiator with cover the stress-buffer layer that the linear expansivity with both centres is set between the cermet substrate.
At present common semi-conductor power module is laid two-sided cermet substrate, stress-buffer layer and the radiator of covering successively below the element that produces heat.Wherein, the stress-buffer layer selection wire coefficient of expansion is between ceramic substrate and radiator and the good material that dispels the heat, and for example: the stress-buffer layer between aluminium oxide copper-clad base plate (perhaps aluminium nitride copper-clad base plate) and the Aluminium Radiator is selected molybdenum-copper usually for use.Yet, molybdenum-copper cost an arm and a leg and density bigger, the cost and the weight of module have been increased like this, simultaneously, need to adopt heat-conducting silicone grease in being connected of molybdenum-copper layer and radiator, the thermal conductivity of heat-conducting silicone grease low (thermal conductivity is about 3W/mK), thereby can greatly reduce the heat-sinking capability of module whole.
China's publication number is that the utility application of CN101341592A discloses a kind of semiconductor module, comprising: ceramic substrate, be engaged in the substrate front surface the front metal plate, be engaged in the back metal plate on back of the body surface and be engaged in the radiator of this back metal plate.Described back metal plate has the composition surface in the face of radiator.Composition surface comprises bonding land and disengaged district.This disengaged district comprises the depression of extending along the thickness direction of back metal plate.The area of the bonding land of back metal plate account for the back metal plate composition surface the gross area 65%～85%.This technical scheme has been saved the stress-buffer layer between ceramic substrate and the radiator, but on the mating surface of metallic plate the land that directly contacts with radiator is set overleaf, and the non-binding district that has given shape and size depression by setting, realize the stress coupling between ceramic substrate and the radiator, but this semiconductor module is when realizing the thermal stress coupling, but reduce heat conducting effective area, be difficult to realize heat conducting maximization.
The utility model content
The utility model is in order to solve the technical problem that semi-conductor power module of the prior art is difficult to have concurrently simultaneously good performance of heat dissipation and thermal stress mitigation performance.
The utility model provides a kind of semi-conductor power module, comprising:
Radiator;
Cover the cermet substrate, be installed on the described radiator, comprising: have the front surface and the ceramic substrate on back of the body surface, the back metal plate of being located at the front metal plate of described ceramic substrate front surface and being located at described ceramic base backboard surface;
Semiconductor element is welded on the described front metal plate;
Housing, built-in and seal described semiconductor element;
Wherein, described radiator is provided with cooling bath towards an end of back metal plate, and described back metal plate is fixed on the radiator and seals described cooling bath.
Preferably, described radiator is provided with and the suitable concave configuration of described back metal plate, and described cooling bath is located at the below of concave configuration, and described back metal plate is installed in the concave configuration and seals the notch of described cooling bath.
Preferably, described radiator and the contacted end face of described back metal plate are made as faying face, and described faying face is provided with cooling zone and land; Described cooling zone is formed by the notch of described cooling bath, and the area of cooling zone accounts for 35～70% of the described faying face gross area.
Preferably, the periphery of described cooling zone is located in described land, is provided with articulamentum between itself and the back metal plate; Described back metal plate is connected by articulamentum with the land and seals described cooling zone accordingly.
Preferably, described cooling bath be respectively equipped with inlet tube and outlet tube into and out of water end (W.E.), being provided with of described inlet tube and outlet tube highly is lower than the height that is provided with of described cooling bath.
Preferably, described cooling bath is the bending groove, and it is into and out of water end (W.E.) the same side towards radiator, and its cross section is circular arc, square or U-shaped.
Preferably, the length and width size of described back metal plate is greater than described ceramic substrate and front metal plate.
Preferably, described ceramic substrate is that thickness is that alumina ceramic plate or the thickness of 0.1～1.5mm is the al nitride ceramic board of 0.3～1.5mm; Described front metal plate is that thickness is aluminium sheet or the aluminium alloy plate of 0.3～0.6mm; Described back metal plate is that thickness is the aluminium alloy plate of 1～3mm.
Preferably, described housing is fixed on the back metal plate, the built-in described ceramic substrate of housing, front metal plate and semiconductor element, and the gap embedding in the housing has heat carrier.
Preferably, the part that described back metal plate exceeds ceramic substrate is provided with fixed part, and described fixed part is provided with fixing hole, and the outer rim of described housing is provided with through hole accordingly, is provided with installing hole on the described radiator accordingly; Connect described through hole, fixing hole and installing hole successively by fixture, described housing, back metal plate are fixed on the described radiator.
Implement the beneficial effect of the utility model semi-conductor power module: by the back metal plate that will cover the cermet substrate be fixed on the radiator and the sealed heat-dissipating device on cooling bath, back metal can directly be contacted with the cooling circulating water that circulates in the cooling bath, thereby, heat in the semiconductor element work can be directly conducted to cooling circulating water in the radiator by covering the cermet substrate, realizes heat radiation rapidly; Simultaneously,, make the module whole temperature remain on below 60 ℃, dwindled the heating and cooling interval, can effectively relax the thermal stress that semi-conductor power module produces in the cold cycling process because the heat that chip produces can be taken away rapidly.In a word, simple in structure, the rapid heat dissipation of semi-conductor power module of the present utility model, reduce the thermal strain that hot and cold circulation causes, when realizing excellent heat dispersion, can effectively prevent the distortion that semi-conductor power module causes owing to thermal stress or break, improve the reliability of module whole.
Description of drawings
Fig. 1 is the schematic diagram of the semi-conductor power module of the utility model one embodiment;
Fig. 2 is the vertical view of the radiator shown in Fig. 1;
Fig. 3 is a radiator shown in Figure 2 cutaway view along the A-A direction.
Embodiment
Below in conjunction with drawings and Examples, the utility model is elaborated.
Be illustrated in figure 1 as the schematic diagram of first embodiment of semi-conductor power module of the present utility model; Described semi-conductor power module mainly comprises: as the radiator 7 of heat abstractor, be installed on covering the cermet substrate and being welded in the semiconductor element 1 that covers on the cermet substrate on the radiator 7.
Its main improvements are, described radiator 7 is provided with the cooling bath 6 of cooling water (perhaps other cooling fluids) that are used to circulate towards an end that covers the cermet substrate, the described cermet substrate that covers is fixed on the described radiator 7 and seals described cooling bath 6, and it can directly be contacted with the cooling water of circulation in the cooling bath 6; Thereby the heat that makes semiconductor element 1 produce can be directly conducted in the cooling circulating water that circulates in the radiator 7 by covering the cermet substrate, realizes heat radiation rapidly.
Concrete structure and the connected mode of below just covering cermet substrate, radiator 7 describe in detail.
The described cermet substrate that covers comprises: have the ceramic substrate 3 on front surface and back of the body surface, the back metal plate 4 of being located at the front metal plate 2 of described ceramic substrate 3 front surfaces and being located at described ceramic substrate 3 back of the body surfaces.
Wherein, described ceramic substrate 3 is made by aluminium oxide or aluminium nitride, is square or rectangle, and generally selecting thickness for use is that alumina ceramic plate or the thickness of 0.1～1.5mm is the al nitride ceramic board of 0.3～1.5mm, length is 28～32mm, and width is 28～32mm.In the present embodiment, preferred dimension is the alumina ceramic plate of 30mm * 30mm * 0.38mm.In actual applications, can determine the size of ceramic substrate 3 according to the specific design of semi-conductor power module.
Described front metal plate 2 is used to install semiconductor element 1 as conductor layer, semiconductor element 1 comprises semiconductor chip, conducting connecting part (not shown) etc., semiconductor chip adopts existing soldering mode to be welded on the front metal plate 2, and is connected with electrode by conducting connecting part (not shown).Described front metal plate 2 can select for use fine aluminium or aluminium alloy to make, and is square or rectangle, and its length is 24～30mm, and width is 24～30mm, and thickness is 0.3～0.6mm.In the present embodiment, front metal plate 2 adopts the commercial-purity aluminium (1000 series) that is of a size of 28mm * 28mm * 0.3mm to make.In actual applications, can specifically determine the size of front metal plate 2 and etch pattern according to the design of semi-conductor power module.In general, the length of front metal plate 2 and/or width are less than or equal to ceramic substrate 3, and preferably its length and width are all than ceramic substrate 3 little 2～4mm, so that the installation of front metal plate 2 on ceramic substrate 3.
Described back metal plate 4 is directly fixed on the radiator 7 as the articulamentum that connects ceramic substrate 3 and radiator 7.Back metal plate 4 adopts aluminium alloy to make, and is square or rectangle, and its length is 32～40mm, and width is 32～40mm, and thickness is 1～3mm; In the present embodiment, back metal plate 4 adopts the magnadure (5A02 series) that is of a size of 35mm * 35mm * 1.5mm to make.In actual applications, can specifically determine the size of back metal plate 4 according to the design of semi-conductor power module, but the length of back metal plate 4 and/or width should be greater than ceramic substrates 3, preferred its length and width are all than ceramic substrate 3 big 4～10mm, its part that exceeds ceramic substrate 3 is made as fixed part 40, be convenient to directly be connected and seal cooling bath 6, thereby directly contact with cooling circulating water in the cooling bath 6 of flowing through with radiator 7; And the both sides of described fixed part 40 are preset with fixing hole 41, are used for fastening back metal plate 4.
During making, with front metal plate 2 and back metal plate 4 mode by vacuum brazing, be welded in the front surface and the back of the body surface of ceramic substrate 3 respectively, and according to the circuit design of semi-conductor power module, etched circuit and the corresponding semiconductor element 1 of installing on front metal plate 2, the making of covering the cermet substrate can be passed through existing techniques in realizing.
Consult Fig. 2 and Fig. 3, Fig. 2 is the vertical view of the radiator shown in Fig. 1; Shown in Figure 3 is that radiator among Fig. 2 is along the cutaway view of A-A direction.Radiator of the present utility model 7 with cover the cermet substrate and be equipped with, and through special structural design, radiator 7 is provided with the concave configuration 70 suitable with back metal plate 4 towards an end that covers the cermet substrate, and being provided with special cooling water passage structure, this cooling water passage structure is cooling bath 6 structures that cooling water and back metal plate 4 are directly contacted.This cooling bath 6 is positioned at the below of this concave configuration 70, and back metal plate 4 is installed in this concave configuration 70 and seals the notch of cooling bath 6, so that the cooling water that circulates in cooling bath 6 can directly contact with back metal plate 4.
Specifically, as shown in Figure 2, described cooling bath 6 is the bending groove, corner with several arc transition, its cross section is circular arc, square or U-shaped, and for example: the cross section of cooling bath 6 can be that the length of side is the square of 3～6mm, and perhaps diameter is the circle of 3～6mm.In the present embodiment, described cooling bath 6 is the bending groove of square (length of side is 4mm) for cross section, corner with three arc transition, and, cooling bath 6 into and out of water end (W.E.) the same side towards radiator 7, in actual applications, can specifically determine the shape and size of cooling bath according to the design of semi-conductor power module.Be connected with inlet tube and outlet tube 61,62 at described cooling bath 6 respectively into and out of water end (W.E.), described inlet tube and outlet tube 61,62 is a straight tube, and its cross section is rounded or square, in the present embodiment, described inlet tube and outlet tube 61,62 is horizontally placed on the same side of radiator 7, the convenient external water source that connects.Consult Fig. 3, what deserves to be mentioned is, being provided with of described inlet tube and outlet tube 61,62 highly is lower than the height that is provided with of described cooling bath 6, its with the junction of cooling bath 6 for curving structure, to make things convenient for being tightly connected of back metal plate 4 and cooling bath 6.
Consult Fig. 1 and Fig. 3, the length and width size of described concave configuration 70 is consistent with described back metal plate 4, and its degree of depth is 0.5～5mm, and preferably the thickness with described back metal plate 4 equates; Concave configuration 70 be provided with the accurate location that is beneficial to back metal plate 4, and make things convenient for the sealing of 4 pairs of cooling baths 6 of back metal plate.What deserves to be mentioned is, described concave configuration 70 is made as faying face with back metal plate 4 contacted end faces, described faying face is provided with cooling zone 71 and land 72, described cooling zone 71 is formed by the notch of cooling bath 6, the area of cooling zone 71 accounts for 35～70% of the described faying face gross area, can guarantee effective contact area of back metal plate 4 and cooling water.In the present embodiment, described cooling zone 71 is formed by described notch with cooling bath 6 of three circular arc corners, and the area of cooling zone 71 accounts for about 40% of the described faying face gross area.
Be understandable that, the sealing of the notch of 4 pairs of cooling baths 6 of back metal plate (being cooling zone 71) is to realize by itself and being connected of land 72, thereby, the periphery (consulting Fig. 2) of described cooling zone 71 is located in described land 72, so that the described cooling zone 71 of back metal plate 4 sealings.The connected mode of described back metal plate 4 and land 72 has multiple, for example: can adopt modes such as plastic cement bonding (as epoxy resin 5), scolder vacuum welding (as the aluminium Si solder) and laser welding to connect.In the present embodiment, apply one deck epoxy resin 5 on the land 72 of radiator 7, back metal plate 4 is installed in the concave configuration 70 accordingly again, back metal plate 4 and land 72 are bonding and seal described cooling zone 71 accordingly by epoxy resin 5.Further, described radiator 7 is provided with two installing holes 73 corresponding to two fixing holes 41 on the back metal plate 4, is used for back metal plate 4 is anchored on radiator 7.
Above-mentioned radiator 7 preferably has the Aluminium Radiator 7 of excellent heat dispersion performance, and the Aluminium Radiator 7 with said structure can adopt casting or machining mode to make.
As shown in Figure 1, in semi-conductor power module, further be provided with housing 9, described housing 9 is fixed on the back metal plate 4, housing 9 built-in described ceramic substrates 3, front metal plate 2 and semiconductor element 1, the outer rim of housing 9 is provided with two through hole 91 corresponding to two fixing holes 41 of back metal plate 4, is used for housing 9 is anchored on back metal plate 4.And the gap embedding in the housing 9 has heat-conducting silicone grease 10 (or heat-conducting glue), outwards conducts with the heat that promotes semiconductor element 1, plays protection and the fixedly effect of semiconductor element 1 simultaneously.
When semi-conductor power module is installed, 1), will cover cermet substrate and radiator 7 corresponding installations: the back metal plate 4 that will cover the cermet substrate places the concave configuration 70 of radiator 7, apply epoxy resin layer 5 by land 72 in concave configuration 70, back metal plate 4 is connected with radiator 7 and cooling bath 6 notches of sealed heat-dissipating device 7, then soldering semiconductor element on front metal plate 2.2), with housing 9 with cover the corresponding installation of cermet substrate: housing 9 is positioned on the back metal plate 4, and built-in ceramic substrate 3, front metal plate 2 and semiconductor element, embedding heat-conducting silicone grease 10 in housing 9 then; 3), by two bolts 8 order pass the through hole 91 of housing 9, the fixing hole 41 of back metal plate 4 is bolted in the installing hole 73 of radiator 7, with housing 9, cover the cermet substrate and be anchored on the radiator 7.
When semi-conductor power module is worked, make circulation cooling water in the cooling bath 6 by inlet tube and outlet tube 61, because back metal plate 4 contacts with the cooling water of circulation in the cooling bath 6, heat in the semiconductor element work can be directly conducted in the cooling circulating water by back metal plate 4, realizes heat radiation rapidly; Because the heat that semiconductor element produces can be taken away rapidly, make the module whole temperature remain on below 60 ℃ simultaneously, dwindled the heating and cooling interval, can effectively relax the thermal stress that semi-conductor power module produces in the cold cycling process.
The semi-conductor power module of the utility model second embodiment is similar to first embodiment, and difference is that described ceramic substrate adopts the aluminium nitride ceramics that is of a size of 30mm * 30mm * 0.635mm; Described front metal plate adopts the aluminum alloy sheet that is of a size of 30mm * 28mm * 0.5mm, and scolding tin is in the front surface of ceramic substrate; Described back metal plate adopts the aluminum alloy sheet that is of a size of 36mm * 36mm * 0.5mm, scolding tin is in the back of the body surface of ceramic substrate, simultaneously, the back metal plate adopts aluminium Si solder (silicone content is 6.5% to 15%, and thickness is 20 to 70 μ m) vacuum welding or laser welding to be fixed on the radiator 7.
In addition, in other embodiment of the present utility model, radiator can be other structure, for example: concave configuration is not set on the radiator, but the back metal plate directly is sealingly fastened on the upper surface of radiator; Again for example: the cooling bath that is provided with on the radiator is not the bending groove, but realize the purpose of dispelling the heat by several straight troughs being set and being connected by inlet tube and outlet tube, be understandable that, the back metal plate is directly contacted with cooling water, and guarantee that cooling water can access the heat spreader structures of effective sealing, all satisfies requirement of the present utility model.
The above only is preferred embodiment of the present utility model, not in order to restriction the utility model, all any modifications of being done within spirit of the present utility model and principle, is equal to and replaces and improvement etc., all should be included within the protection range of the present utility model.
Claims (10)
1. semi-conductor power module comprises:
Radiator (7);
Cover the cermet substrate, be installed on the described radiator (7), comprise: have the ceramic substrate (3) on front surface and back of the body surface, the back metal plate (4) of being located at the front metal plate (2) of described ceramic substrate (3) front surface and being located at described ceramic substrate (3) back of the body surface;
Semiconductor element (1) is welded on the described front metal plate (2);
Housing (9), built-in and seal described semiconductor element (1);
It is characterized in that described radiator (7) is provided with cooling bath (6) towards an end of back metal plate (4), described back metal plate (4) is fixed in radiator (7) and goes up and seal described cooling bath (6).
2. semi-conductor power module according to claim 1, it is characterized in that, described radiator (7) is provided with the concave configuration (70) suitable with described back metal plate (4), described cooling bath (6) is located at the below of concave configuration (70), and described back metal plate (4) is installed in the concave configuration (70) and seals the notch of described cooling bath (6).
3. semi-conductor power module according to claim 1 and 2 is characterized in that, described radiator (7) is made as faying face with the contacted end face of described back metal plate (4), and described faying face is provided with cooling zone (71) and land (72); Described cooling zone (71) is formed by the notch of described cooling bath (6), and the area of cooling zone (71) accounts for 35～70% of the described faying face gross area.
4. semi-conductor power module according to claim 3 is characterized in that, described land (72) are located at the periphery of described cooling zone (71), is provided with articulamentum (5) between itself and the back metal plate (4); Described back metal plate (4) is connected by articulamentum (5) with land (72) and seals described cooling zone (71) accordingly.
5. semi-conductor power module according to claim 1 and 2, it is characterized in that, described cooling bath (6) be respectively equipped with inlet tube and outlet tube (61,62) into and out of water end (W.E.), being provided with of described inlet tube and outlet tube (61,62) highly is lower than the height that is provided with of described cooling bath (6).
6. semi-conductor power module according to claim 5 is characterized in that, described cooling bath (6) is the bending groove, and it is into and out of water end (W.E.) the same side towards radiator (7), and its cross section is circular arc, square or U-shaped.
7. semi-conductor power module according to claim 1 and 2 is characterized in that, the length and width size of described back metal plate (4) is greater than described ceramic substrate (3) and front metal plate (2).
8. semi-conductor power module according to claim 7 is characterized in that, described ceramic substrate (3) is that thickness is that alumina ceramic plate or the thickness of 0.1～1.5mm is the al nitride ceramic board of 0.3～1.5mm; Described front metal plate (2) is that thickness is aluminium sheet or the aluminium alloy plate of 0.3～0.6mm; Described back metal plate (4) is that thickness is the aluminium alloy plate of 1～3mm.
9. semi-conductor power module according to claim 7, it is characterized in that, described housing (9) is fixed on the back metal plate (4), the built-in described ceramic substrate of housing (9) (3), front metal plate (2) and semiconductor element (1), and the gap embedding in the housing (9) has heat carrier (10).
10. semi-conductor power module according to claim 7, it is characterized in that, the part that described back metal plate (4) exceeds ceramic substrate (3) is provided with fixed part (40), described fixed part (40) is provided with fixing hole (41), the outer rim of described housing (9) is provided with through hole (91) accordingly, is provided with installing hole (73) on the described radiator (7) accordingly; Connect described through hole (91), fixing hole (41) and installing hole (73) successively by fixture, described housing (9), back metal plate (4) are fixed on the described radiator (7).
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| CN2010201501423U CN201667332U (en) | 2010-03-29 | 2010-03-29 | Semiconductor power module |
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| CN2010201501423U CN201667332U (en) | 2010-03-29 | 2010-03-29 | Semiconductor power module |
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| CN102867788A (en) * | 2012-09-29 | 2013-01-09 | 江苏宏微科技股份有限公司 | Power module based on novel metal-coated ceramic substrate |
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| US9962563B2 (en) | 2012-04-03 | 2018-05-08 | Koninklijke Philips N.V. | Energy density map calculating using a thermo acoustic mode |
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| CN102867788A (en) * | 2012-09-29 | 2013-01-09 | 江苏宏微科技股份有限公司 | Power module based on novel metal-coated ceramic substrate |
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| CN104334005B (en) * | 2014-11-28 | 2017-01-25 | 成都泰格微波技术股份有限公司 | Totally-sealed cooling chamber |
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| CN106304811B (en) * | 2016-10-19 | 2018-09-18 | 中国科学院光电研究院 | A kind of electronic system from radiator structure |
| CN108964297A (en) * | 2017-05-17 | 2018-12-07 | 德昌电机(深圳)有限公司 | A kind of engine cooling mould group of motor, the control circuit board and application motor |
| CN112490195A (en) * | 2020-12-02 | 2021-03-12 | 江苏宏微科技股份有限公司 | Power semiconductor module and mounting method thereof |
| CN114334864A (en) * | 2021-11-29 | 2022-04-12 | 江苏宏微科技股份有限公司 | Power Semiconductor Modules |
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