CN201485537U - A kind of preparation device of graphite single wafer - Google Patents

Abstract

The utility model relates to a preparation device for a graphite single wafer. Its special feature is that it is mainly composed of resistance heating furnace, air pipe, fan and clamp pan; the fan is placed at the mouth of the resistance heating furnace, and the air pipe and clamp pan are placed in the resistance heating furnace; one end of the air pipe is connected to the outside of the resistance heating furnace air source. Heat the graphite to above 1000°C in a resistance heating furnace and keep it warm for 40 minutes; after the Van der Waals force between graphite molecules completely disappears, open the lid of the clamp pot and the resistance heating furnace cover, and spray the graphite with hot air at the same time; Graphite single wafers and graphite wafers that have not yet become single wafers rise with the hot air, and after escaping from the resistance heating furnace mouth, they are blown to the distance by a fan installed at the resistance heating furnace mouth; due to the self-weight factor of the material, the graphite single wafer will be Blow farthest, at the furthest point where graphite wafers fall, and graphite single crystals can be collected. The beneficial effect is that the production efficiency of the graphite single wafer is high, and the quality of the product is pure.

Description

A kind of preparation device of graphite single wafer

Technical field

The utility model relates to a preparation device for a graphite single wafer, which belongs to the field of preparation of micro/nano materials.

Background technique

In recent years, micro/nano materials have been widely used, and the preparation of graphite single crystal is of great significance. Existing people use sticky tape to remove the method for sticky bulk graphite at present, from sticky graphite single wafer from bulk graphite. But work efficiency is quite low, it is difficult to form industrialized production. Secondly, there will be some sticky tape substances on the graphite single wafer, which affects the purity of the graphite single wafer.

Contents of the invention

In order to overcome the deficiencies of the prior art, the purpose of the utility model is to provide a high-efficiency preparation device for graphite single wafer.

The utility model is realized in this way: it is mainly composed of a resistance heating furnace, an air pipe, a fan and a clamp pot; the fan is placed at the mouth of the resistance heating furnace, and the air pipe and the clamp pot are placed in the resistance heating furnace; Gas source outside the furnace. Heat the graphite to above 1000°C in a resistance heating furnace and keep it warm for 40 minutes; after the van der Waals force between graphite molecules completely disappears, open the lid of the clamp pot and the resistance heating furnace cover, and spray the graphite with hot air at the same time; Graphite single wafers and graphite wafers that have not yet become single wafers rise with the hot air, and after escaping from the resistance heating furnace mouth, they are blown to the distance by a fan installed at the resistance heating furnace mouth; due to the self-weight factor of the material, the graphite single wafer will be The furthest blown, at the farthest point where the graphite flakes fall, can collect graphite single flakes.

The beneficial effects of the utility model are: the production efficiency of the graphite single wafer is high, and the quality of the product is pure.

Description of drawings

Below in conjunction with figure and embodiment the utility model is further described.

Fig. 1 is the schematic diagram of the preparation device of the present invention.

Fig. 2 is the state after the heating of the utility model is finished.

Fig. 3 is a three-dimensional schematic diagram of the preparation device of the present invention.

FIG. 4 is a partial enlarged view A of FIG. 3 .

Fig. 5 is a three-dimensional schematic view of the tong pan of the present invention.

FIG. 6 is a partial enlarged view B of FIG. 5 .

Detailed ways:

The utility model preparation device is shown in Fig. 1: mainly is made up of resistance heating furnace 11, air pipe 13, fan 7 and clamp pot 10; Inside. The air pipe 13 is composed of an outer pipe 131 and a coil pipe 132; one end 1311 of the outer pipe is placed in the resistance heating furnace and is provided with an external thread, and the other end 1312 is connected to the gas source outside the resistance heating furnace; the coil pipe 132 is wound around the clamp pot 10 Circling several circles, one end 1321 is placed in the clamp pot 10; the other end 1322 has an internal thread, which is threadedly connected to one end 1311 of the outer tube. The coiled pipe 132 and the outer pipe 131 are screwed together so that the two can be separated (the outer pipe 131 can rotate), and the tongs 10 can be pulled out of the furnace door 111 together with the coiled pipe 132 .

(see Fig. 5) clamp pot 10 is provided with clamp pot cover 101 and handle 102, and clamp pot cover 101 is fixedly connected with handle 102, and clamp pot cover 101 is connected with clamp pot 10 by hinge 103; 103 swings, open and close in tong pan 10.

(see Fig. 3, Fig. 4) resistance heating furnace 11 is provided with resistance heating furnace cover 113, furnace door 111 and furnace door 112; Furnace door and furnace door are respectively provided with a semicircle hole 1111 and 1121, closes furnace door, described The two semicircular holes are combined to form a circular hole 114 . The circular hole 114 just accommodates the handle 102 . In this way, the operator can operate the handle outside the resistance heating furnace to open or close the clamp pot cover 101 .

Firstly, as shown in Fig. 1, put the tongs 10 with the graphite 5 into the resistance heating furnace 11, then raise the temperature to above 1000° C., and keep the temperature for 40 minutes. The middle layers of graphite crystals belong to molecular crystals, which are combined by van der Waals force. When the temperature reaches above 1000C, the van der Waals force between the layers in the graphite crystal will disappear. After this, open pincer pot cover 101 and electric resistance heating furnace cover 113 (seeing Fig. 2), meanwhile, aim at graphite, spray into air 14 (the air that sprays into is because through the air tube 13 that coils, obtains heating, so spraying On the graphite, the graphite will not be cooled rapidly to below 1000°C. Another method is: the injected air itself has been heated by other methods outside the resistance furnace, so the effect is better). Graphite that has lost van der Waals' force, after being impacted by the heated air 14, forms some single crystals and some graphite powders that have not yet become single crystals. As the hot air rises, these graphite powders pass through the guide channel 6 of the resistance heating furnace and escape from the resistance heating furnace mouth 16 . At this moment, the fan 7 that is positioned at the resistance heating furnace mouth is blown to the direction shown in the shearing head. Due to the self-weight factor of the material, the graphite single crystal will be blown the farthest, so that the graphite single crystal can be collected at the farthest point where the graphite wafer falls.

Claims (4)

1. A preparation device for a graphite single wafer is characterized in that it is mainly composed of a resistance heating furnace, an air pipe, a fan and a clamp pot; the fan is placed in the resistance heating furnace mouth, and the air pipe and the clamp pot are placed in the resistance heating furnace; One end of the tube is connected to a gas source outside the resistance heating furnace. 2. the preparation device of graphite single wafer according to claim 1 is characterized in that described air pipe is made of outer pipe and coil pipe; One end of outer pipe is placed in the resistance heating furnace, is provided with external thread, and the other end Connected to the gas source outside the resistance heating furnace; the coil coils around the tong pot several times, one end of which is placed in the tong pot; the other end has an internal thread, which is connected to the outer pipe thread. 3. the preparation device of graphite single wafer according to claim 1, it is characterized in that said clamp pot is provided with clamp pot cover and handle, and clamp pot cover is fixedly connected with handle, and clamp pot cover is hingedly connected with clamp pot; Rotate handle , the lid of the tong pot swings around the hinge, and opens and closes on the tong pot. 4. the preparation device of graphite single wafer according to claim 1 is characterized in that described electric resistance heating furnace is provided with furnace door and furnace door; furnace door and furnace door are respectively provided with a semicircle hole, closes furnace door, so The two semicircular holes described above are combined to form a circular hole.

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