CN201483382U - Polishing pad and polishing apparatus - Google Patents
Polishing pad and polishing apparatus Download PDFInfo
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- CN201483382U CN201483382U CN2009201551129U CN200920155112U CN201483382U CN 201483382 U CN201483382 U CN 201483382U CN 2009201551129 U CN2009201551129 U CN 2009201551129U CN 200920155112 U CN200920155112 U CN 200920155112U CN 201483382 U CN201483382 U CN 201483382U
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- sensitive adhesive
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- 238000005498 polishing Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract 21
- 238000007517 polishing process Methods 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 158
- 238000000227 grinding Methods 0.000 claims description 137
- 238000000034 method Methods 0.000 claims description 7
- 239000002952 polymeric resin Substances 0.000 claims 2
- 229920003002 synthetic resin Polymers 0.000 claims 2
- 239000003292 glue Substances 0.000 description 63
- 238000005516 engineering process Methods 0.000 description 20
- 239000011347 resin Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- 229920002313 fluoropolymer Polymers 0.000 description 12
- 239000004811 fluoropolymer Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 10
- 239000004810 polytetrafluoroethylene Substances 0.000 description 10
- 239000005020 polyethylene terephthalate Substances 0.000 description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 description 7
- 229920000784 Nomex Polymers 0.000 description 5
- 239000004677 Nylon Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 239000004793 Polystyrene Substances 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 239000004763 nomex Substances 0.000 description 5
- 229920001778 nylon Polymers 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 229920000058 polyacrylate Polymers 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 229920000098 polyolefin Polymers 0.000 description 5
- 229920002223 polystyrene Polymers 0.000 description 5
- -1 polytetrafluoroethylene Polymers 0.000 description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 229920001897 terpolymer Polymers 0.000 description 2
- 229920000297 Rayon Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
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- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本实用新型提供一种用于半导体研磨工艺的研磨垫，特别是有关于一种利用感压胶进行固接的研磨垫。此研磨垫包含一基材，此基材具有一研磨面以及一相对研磨面的底面，其中研磨垫的特征在于：于基材的底面上形成一感压胶用以与一底层固接，其中感压胶的横向黏性大于感压胶的纵向黏性。
The utility model provides a polishing pad for semiconductor polishing process, and more particularly, relates to a polishing pad fixed with pressure-sensitive adhesive. The polishing pad comprises a substrate, the substrate having a polishing surface and a bottom surface opposite to the polishing surface, wherein the polishing pad is characterized in that: a pressure-sensitive adhesive is formed on the bottom surface of the substrate for fixing with a bottom layer, wherein the lateral viscosity of the pressure-sensitive adhesive is greater than the longitudinal viscosity of the pressure-sensitive adhesive.
Description
Technical field
The utility model relates to a kind of grinding pad that is used for semiconductor grinding technology, particularly carries out affixed grinding pad relevant for a kind of pressure-sensing glue of utilizing.
Background technology
Most electronic chip is to be formed by the stratification different materials, for example semi-conductor silicon chip (silicon) promptly is one of them of stratification material, when each new material layer is coupled with, often need make the step of grinding or milling remove unnecessary layer material, so that this silicon chip planarization, or reach other purpose, and the process of this kind grinding often be called as the cmp planarization (Chemical MechanicalPolishing, CMP).Because chip is formed by various thin material layer, therefore must material layer evenly could be removed by the surface of silicon chip through CMP grinding steps repeatedly.
In typical C MP grinding technics, grinding pad can be fixed on the bottom, or a plurality of grinding pads are engaged layer by layer forming a multiple grinding pad, or when being fixed in grinding pad on the lapping device, all need to reach the fixing of grinding pad and lapping device by assisting of viscose or adhesive agent.Yet, when carrying out the grinding operation of semiconductor subassembly, lapping device often needs to reach in rotary manner for a long time the purpose of polishing, therefore the shearing that lapping device produced can cause grinding pad to produce the phenomenon of peeling off, and cause grinding operation must be forced to interrupt, or cause semiconductor subassembly to be damaged.
The utility model content
The purpose of this utility model is to provide a kind of grinding pad that is used for semiconductor grinding technology, can grinding pad be fixed on the bottom by pressure-sensing glue.
Another purpose of the present utility model is to provide a kind of grinding pad that is used for semiconductor grinding technology, can a plurality of grinding pads be engaged layer by layer to form a multiple grinding pad by pressure-sensing glue.
Another purpose of the present utility model is to provide a kind of grinding pad that is used for semiconductor grinding technology, can grinding pad be fixed on the lapping device by pressure-sensing glue.
A purpose more of the present utility model is to provide a kind of grinding pad that is used for semiconductor grinding technology, it utilizes pressure-sensing glue to carry out the affixed of grinding pad, this pressure-sensing glue has the characteristic of cross viscosity greater than vertical stickiness, therefore the cross viscosity of pressure-sensing glue is bigger, and grinding pad can not be subjected to the influence of shear force that lapping device produces and produce and peel off.
The utility model also has a purpose to be to provide a kind of grinding pad that is used for semiconductor grinding technology, it utilizes pressure-sensing glue to carry out the affixed of grinding pad, this pressure-sensing glue has the characteristic of cross viscosity greater than vertical stickiness, therefore vertical stickiness of pressure-sensing glue is less, is easy to and will takes out on the grinding pad self-grind device.
For achieving the above object, the grinding pad that is used for semiconductor grinding technology that the utility model provides, it utilizes pressure-sensing glue to carry out affixed grinding pad.This grinding pad comprises a base material, this base material has the bottom surface of an abradant surface and a relative abradant surface, wherein grinding pad is characterised in that: form a pressure-sensing glue in order to affixed with a bottom on the bottom surface of base material, wherein the cross viscosity of pressure-sensing glue is greater than vertical stickiness of pressure-sensing glue, the bottom surface and the bottom fluid-tight engagement of base material when grinding.
The grinding pad that is used for semiconductor grinding technology that the utility model provides in addition, it utilizes pressure-sensing glue to carry out affixed grinding pad.This grinding pad is made up of at least one first base material and at least one second base material, first base material and second base material respectively have the bottom surface of an abradant surface and a relative abradant surface, wherein grinding pad is characterised in that: the abradant surface that forms a pressure-sensing glue and second base material on the bottom surface of first base material is affixed, wherein the cross viscosity of pressure-sensing glue is greater than vertical stickiness of pressure-sensing glue, the abradant surface fluid-tight engagement of the bottom surface of first base material and second base material during grinding.
The utility model provides a kind of lapping device in addition, and it utilizes pressure-sensing glue that grinding pad is fixed on the lapping device.This lapping device is in order to grind the semiconductor assembly and to carry a grinding pad.Grinding pad comprises at least one base material, and base material has the bottom surface of an abradant surface and a relative abradant surface.Lapping device comprises one first platform, second platform, one drive unit and a device for exerting, first platform is in order to supporting substrate, and be connected with the bottom surface of base material, second platform is in order to the bearing semiconductor assembly, drive unit rotates in order to drive first platform, device for exerting makes between grinding pad on the platform of winning and the semiconductor subassembly on second platform has a specified pressure, wherein grinding pad is characterised in that: form a pressure-sensing glue on the bottom surface of base material in order to affixed with first platform, wherein the cross viscosity of pressure-sensing glue is greater than vertical stickiness of pressure-sensing glue, the bottom surface of base material and the first platform fluid-tight engagement during grinding.
The utility model provides a kind of lapping device in addition, and it utilizes pressure-sensing glue that grinding pad is fixed on the lapping device.This lapping device is in order to grinding semiconductor assembly and carries a grinding pad that lapping device comprises one first platform, second platform, a drive unit and a device for exerting.Grinding pad is made up of at least one first base material and at least one second base material, first base material and second base material respectively have the bottom surface of an abradant surface and a relative abradant surface, one bottom surface of first platform and second base material is connected, the second platform bearer semiconductor subassembly, drive unit drives first platform and rotates, device for exerting makes between grinding pad on first platform and the semiconductor subassembly on second platform has a specified pressure, wherein grinding pad is characterised in that: the abradant surface that forms a pressure-sensing glue and second base material on the bottom surface of first base material is affixed, the formation pressure-sensing glue and first platform are affixed on the bottom surface of second base material, wherein the cross viscosity of pressure-sensing glue is greater than vertical stickiness of pressure-sensing glue, the abradant surface fluid-tight engagement of the bottom surface of first base material and second base material during grinding.
In view of this, the grinding pad that is used for semiconductor grinding technology that the utility model provides, it utilizes pressure-sensing glue to carry out the affixed of grinding pad, or utilizes pressure-sensing glue that grinding pad is fixed on the lapping device.Because pressure-sensing glue of the present utility model has the characteristic of cross viscosity greater than vertical stickiness, when therefore carrying out the grinding operation of semiconductor subassembly, because the cross viscosity of pressure-sensing glue is bigger, so grinding pad can not be subjected to the influence of shear force that lapping device produces and produces and peel off; Because vertical stickiness of moulding is less, therefore is easy to and takes out on the grinding pad self-grind device.
Description of drawings
Figure 1A is an embodiment schematic diagram of grinding pad of the present utility model.
Figure 1B is an embodiment schematic diagram of multiple grinding pad of the present utility model.
Fig. 1 C is an embodiment schematic diagram of multiple grinding pad of the present utility model.
Fig. 2 A is an embodiment schematic diagram of lapping device of the present utility model.
Fig. 2 B is an embodiment schematic diagram of lapping device of the present utility model.
Primary clustering symbol description in the accompanying drawing
10 grinding pads; 11 base materials;
The abradant surface of 11a base material; The bottom surface of 11b base material;
12 pressure-sensing glue; 13 bottoms;
20 grinding pads; 21 first base materials;
The abradant surface of 21a first base material; The bottom surface of 21b first base material;
22 second base materials; The abradant surface of 22a second base material;
The bottom surface of 22b second base material; 23 pressure-sensing glue;
24 bottoms; 30 lapping devices;
31 semiconductor subassemblies; 32 grinding pads;
33 base materials; The abradant surface of 33a base material;
The bottom surface of 33b base material; 34 first platforms;
35 second platforms; 36 drive units;
37 device for exerting; 38 pressure-sensing glue;
40 lapping devices; 41 semiconductor subassemblies;
42 grinding pads, 43 first base materials;
The abradant surface of 43a first base material; The bottom surface of 43b first base material;
44 second base materials; The abradant surface of 44a second base material;
The bottom surface of 44b second base material; 45 first platforms;
46 second platforms; Device is moved in 47 districts;
48 device for exerting; 49 pressure-sensing glue.
The specific embodiment
Because the utility model provides a kind of grinding pad and a kind of lapping device that is used for semiconductor grinding technology, some grinding pads that wherein used or the detailed manufacturing or the processing procedure of lapping device, be to utilize prior art to realize, so in following explanation, do not do complete description.And the accompanying drawing in the literary composition in following, also not according to the actual complete drafting of relative dimensions, its effect is only being expressed the schematic diagram relevant with the utility model feature.
Please refer to Figure 1A, is a preferred embodiment schematic diagram that is used for the grinding pad of semiconductor grinding technology according to of the present utility model.Shown in Figure 1A, a kind of grinding pad 10 that is used for semiconductor grinding technology, grinding pad 10 comprises a base material 11, this base material 11 has the bottom surface 11b of an abradant surface 11a and a relative abradant surface 11a, wherein grinding pad 10 is characterised in that: the bottom surface 11b of base material 11 goes up and forms a pressure-sensing glue 12 in order to affixed with a bottom 13, wherein the cross viscosity of pressure-sensing glue 12 is greater than vertical stickiness of pressure-sensing glue 12, but thus when grinding the bottom surface 11b of base material 11 can not separate with bottom 13 fluid-tight engagement.And the cross viscosity of pressure-sensing glue 12 is about 0.3-3kg/cm, and vertical stickiness of pressure-sensing glue 12 is about 0.05-0.55kg/cm.
According to above-mentioned, base material 11 is roughly the same with the shape and the area of bottom 13, the bottom 13 affixed mutually with the bottom surface 11b of base material 11 is a kind of polyester film (PET Mylar), and base material 11 is a fluoropolymer resin, this kind fluoropolymer resin can be Merlon, nylon, polyolefin, polyvinyl alcohol, polyacrylate, polytetrafluoroethylene (PTFE), PET, polyimides, Nomex, poly-stretch aryl, polystyrene, polymethyl methacrylate, its copolymer with and composition thereof; Base material 11 has at least a different character with bottom 13, this character can be hardness, density, porosity, compressibility, rigidity, stretch modulus, bulk modulus, transparency, chemical composition, rheological characteristic, creep, glass transition temperature, melt temperature, viscosity with and combination.In addition, base material 11 is if having loose structure, and then bottom 13 is a non-porous structure, otherwise bottom 13 is if having loose structure, and then base material 11 is a non-porous structure; Can be provided with at least one transparent window, groove or hole in the abradant surface 11a of base material 11 in addition, transparent window is located on the abradant surface 11a of base material 11, can be for when carrying out grinding operation, and the degree that the observation semiconductor subassembly is ground; Groove or hole are located on the abradant surface 11a of base material 11, can be for when carrying out grinding operation, and except the abradant surface 11a that makes lapping liquid can be uniformly distributed in base material 11 goes up, the impurity deposition that is produced in the time of also can effectively suppressing to grind and cause the semiconductor subassembly scratch; In addition, the method that transparent window, groove or hole etc. are set on the abradant surface 11a of base material 11 is a known technology, so the utility model is not given unnecessary details repeating at this.
Then, please refer to Figure 1B, is another preferred embodiment schematic diagram that is used for the grinding pad of semiconductor grinding technology according to of the present utility model.Shown in Figure 1B, a kind of grinding pad 20 that is used for semiconductor grinding technology, grinding pad 20 is made up of with at least one second base material 22 at least one first base material 21, these base materials 21,22 respectively have an abradant surface 21a, the relative abradant surface 21a of 22a with one, the bottom surface 21b of 22a, 22b, wherein grinding pad 20 is characterised in that: the bottom surface 21b of first base material 21 goes up and forms a pressure-sensing glue 23 in order to affixed with the abradant surface 22a of second base material 22, can form a multiple grinding pad and a plurality of grinding pads 20 are engaged layer by layer by pressure-sensing glue 23, wherein the cross viscosity of pressure-sensing glue 23 is greater than vertical stickiness of pressure-sensing glue 23, but thus when grinding the bottom surface 21b of first base material 21 can not separate with the abradant surface 22a fluid-tight engagement of second base material 22.And the cross viscosity of pressure-sensing glue 23 is about 0.3-3kg/cm, and vertical stickiness of pressure-sensing glue 23 is about 0.05-0.55kg/cm.
According to above-mentioned, the shape and the area of first base material 21 and second base material 22 are roughly the same, wherein first base material 21 comprises one first fluoropolymer resin, and second base material 22 comprises one second fluoropolymer resin, and first fluoropolymer resin and second fluoropolymer resin can be Merlon, nylon, polyolefin, polyvinyl alcohol, polyacrylate, polytetrafluoroethylene (PTFE), PET, polyimides, Nomex, poly-stretch aryl, polystyrene, polymethyl methacrylate, its copolymer with and composition thereof; First base material 21 has at least a different character with second base material 22, this character can be hardness, density, porosity, compressibility, rigidity, stretch modulus, bulk modulus, transparency, chemical composition, rheological characteristic, creep, glass transition temperature, melt temperature, viscosity with and combination.In addition, first base material 21 is if having loose structure, and then second base material 22 is non-porous structure, and is anti-, and second base material 22 is if having loose structure, and then first base material 21 is a non-porous structure; Can be provided with at least one transparent window, groove or hole in the abradant surface 21a of first base material 21 in addition, transparent window is located on the abradant surface 21a of first base material 21, can be for when carrying out grinding operation, and the degree that the observation semiconductor subassembly is ground; Groove or hole are located on the abradant surface 21a of first base material 21, can be for when carrying out grinding operation, except the abradant surface 21a that makes lapping liquid can be uniformly distributed in first base material 21 goes up, the impurity deposition that is produced in the time of also can effectively suppressing to grind and cause the semiconductor subassembly scratch; In addition, the method that transparent window, groove or hole etc. are set on the abradant surface 11a of base material 11 is a known technology, so the utility model is not given unnecessary details repeating at this.
Then, please refer to Fig. 1 C, is the another preferred embodiment schematic diagram that is used for the grinding pad of semiconductor grinding technology according to of the present utility model.Accept the described structure of Figure 1B, present embodiment can further comprise a bottom 24 in order to affixed with grinding pad 20, and shown in Fig. 1 C, wherein grinding pad 20 lies in the last pressure-sensing glue 23 that forms of bottom surface 22b of second base material 22 in order to affixed with bottom 24.
According to above-mentioned, second base material 22 is roughly the same with the shape and the area of bottom 24, and with the affixed mutually bottom 24 of the bottom surface 22b of second base material 22 be a kind of polyester film (PET Mylar), wherein bottom 24 comprises a terpolymer resin, this terpolymer resin can be Merlon, nylon, polyolefin, polyvinyl alcohol, polyacrylate, polytetrafluoroethylene (PTFE), PET, polyimides, Nomex, poly-stretch aryl, polystyrene, polymethyl methacrylate, its copolymer with and composition thereof; First base material 21, second base material 22 have at least a different character with bottom 24, this character can be hardness, density, porosity, compressibility, rigidity, stretch modulus, bulk modulus, transparency, chemical composition, rheological characteristic, creep, glass transition temperature, melt temperature, viscosity with and combination.In addition, first base material 21 is if having loose structure, then bottom 24 is a non-porous structure, otherwise bottom 24 is if having loose structure, then first base material 21 is a non-porous structure, second base material 22 is if having loose structure again, and then bottom 24 is a non-porous structure, otherwise, bottom 24 is if having loose structure, and then second base material 22 is a non-porous structure.As for described first base material 21 of present embodiment and second base material 22, also accept the described every structure of Figure 1B, do not repeat to give unnecessary details at this.
Please refer to Fig. 2 A, is the preferred embodiment schematic diagram according to lapping device of the present utility model.Shown in Fig. 2 A, a kind of lapping device 30, it comprises one first platform 34, one second platform 35, a drive unit 36, a device for exerting 37 and a grinding pad 32.Grinding pad 32 comprises one or more than one base material 33, base material 33 has the bottom surface 33b of the relative abradant surface 33a with of an abradant surface 33a, first platform 34 is connected with the bottom surface 33b of base material 33, second platform 35 is in order to bearing semiconductor assembly 31, drive unit 36 rotates in order to drive first platform 34, device for exerting 37 makes between grinding pad 32 on the platform 34 of winning and the semiconductor subassembly 31 on second platform 35 has a specified pressure, wherein grinding pad 32 is characterised in that: the bottom surface 33b of base material 33 goes up and forms a pressure-sensing glue 38 in order to affixed with first platform 34, wherein the cross viscosity of pressure-sensing glue 38 is greater than vertical stickiness of pressure-sensing glue 38, therefore the cross viscosity of pressure-sensing glue 38 is bigger, the influence of shear force that grinding pad 32 can not be subjected to lapping device 30 and produced and producing is peeled off, vertical stickiness of pressure-sensing glue 38 is less, is easy to take out on the grinding pad 32 self-grind devices 30.And the cross viscosity of pressure-sensing glue 38 is about 0.3-3kg/cm, and vertical stickiness of pressure-sensing glue 38 is about 0.05-0.55kg/cm.
According to above-mentioned, base material 33 is a fluoropolymer resin, this kind fluoropolymer resin can be Merlon, nylon, polyolefin, polyvinyl alcohol, polyacrylate, polytetrafluoroethylene (PTFE), PET, polyimides, Nomex, poly-stretch aryl, polystyrene, polymethyl methacrylate, its copolymer with and composition thereof.In addition, can be provided with at least one transparent window, groove or hole in the abradant surface 33a of base material 33 in addition, transparent window is located on the abradant surface 33a of base material 33, can be for when carrying out grinding operation, and the degree that the observation semiconductor subassembly is ground; Groove or hole are located on the abradant surface 33a of base material 33, can be for when carrying out grinding operation, and except the abradant surface 33a that makes lapping liquid can be uniformly distributed in base material 33 goes up, the impurity deposition that is produced in the time of also can effectively suppressing to grind and cause the semiconductor subassembly scratch; In addition, the method that transparent window, groove or hole etc. are set on the abradant surface 11a of base material 11 is a known technology, so the utility model is not given unnecessary details repeating at this.
Then, please refer to Fig. 2 B, is another preferred embodiment schematic diagram according to lapping device of the present utility model.Shown in Fig. 2 B, a kind of lapping device 40, it comprises one first platform 45, one second platform 46, a drive unit 47, a device for exerting 48 and a grinding pad 42.Grinding pad 42 by one or more than one first base material 43 and one or more than one second base material 44 formed, and first base material 43 and second base material 44 respectively have an abradant surface 43a, the relative abradant surface 43a of 44a with one, the bottom surface 43b of 44a, 44b, first platform 45 is connected with the bottom surface 44b of one of second base material 44, second platform 46 is in order to bearing semiconductor assembly 41, drive unit 47 rotates in order to drive first platform 45, device for exerting 48 makes between grinding pad 42 on the platform 45 of winning and the semiconductor subassembly 41 on second platform 46 has a specified pressure, wherein grinding pad 42 is characterised in that: the bottom surface 43b of first base material 43 goes up and forms a pressure-sensing glue 49 in order to affixed with the abradant surface 44a of second base material 44, can form a multiple grinding pad and a plurality of grinding pads 42 are engaged layer by layer by pressure-sensing glue 49, go up in the bottom surface 44b of second base material 44 again and form a pressure-sensing glue 49 in order to affixed with first platform 45, wherein the cross viscosity of pressure-sensing glue 49 is greater than vertical stickiness of pressure-sensing glue 49, therefore the cross viscosity of pressure-sensing glue 49 is bigger, the influence of shear force that grinding pad 42 can not be subjected to lapping device 40 and produced and peeling off, vertical stickiness of pressure-sensing glue 49 is less, is easy to take out on the grinding pad 42 self-grind devices 40.And the cross viscosity of pressure-sensing glue 49 is about 0.3-3kg/cm, and vertical stickiness of pressure-sensing glue 49 is about 0.05-0.55kg/cm.
According to above-mentioned, the shape and the area of first base material 43 and second base material 44 are roughly the same, wherein first base material 43 comprises one first fluoropolymer resin, and second base material 44 comprises one second fluoropolymer resin, and first fluoropolymer resin and second fluoropolymer resin can be Merlon, nylon, polyolefin, polyvinyl alcohol, polyacrylate, polytetrafluoroethylene (PTFE), PET, polyimides, Nomex, poly-stretch aryl, polystyrene, polymethyl methacrylate, its copolymer with and composition thereof; First base material 43 has at least a different character with second base material 44, this character can be hardness, density, porosity, compressibility, rigidity, stretch modulus, bulk modulus, transparency, chemical composition, rheological characteristic, creep, glass transition temperature, melt temperature, viscosity with and combination.In addition, first base material 43 is if having loose structure, and then second base material 44 is a non-porous structure, otherwise second base material 44 is if having loose structure, and then first base material 43 is a non-porous structure; Can be provided with at least one transparent window, groove or hole in the abradant surface 43a of first base material 43 in addition, transparent window is located on the abradant surface 43a of first base material 43, can be for when carrying out grinding operation, and the degree that the observation semiconductor subassembly is ground; Groove or hole are located on the abradant surface 43a of first base material 43, can be for when carrying out grinding operation, except the abradant surface 43a that makes lapping liquid can be uniformly distributed in first base material 43 goes up, the impurity deposition that is produced in the time of also can effectively suppressing to grind and cause the semiconductor subassembly scratch; In addition, the method that transparent window, groove or hole etc. are set on the abradant surface 11a of base material 11 is a known technology, so the utility model is not given unnecessary details repeating at this.
The above is preferred embodiment of the present utility model only, is not in order to limit interest field of the present utility model; Simultaneously above description should be understood and be implemented for those skilled in the art, so other does not break away from the equivalence of being finished under the spirit that the utility model discloses and change or modification, all should be included in the claim scope of application.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201551129U CN201483382U (en) | 2009-05-14 | 2009-05-14 | Polishing pad and polishing apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201551129U CN201483382U (en) | 2009-05-14 | 2009-05-14 | Polishing pad and polishing apparatus |
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| CN201483382U true CN201483382U (en) | 2010-05-26 |
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| CN2009201551129U Expired - Lifetime CN201483382U (en) | 2009-05-14 | 2009-05-14 | Polishing pad and polishing apparatus |
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| CN111633554A (en) * | 2014-10-17 | 2020-09-08 | 应用材料公司 | Polishing pad produced by lamination manufacturing process |
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| US11685014B2 (en) | 2018-09-04 | 2023-06-27 | Applied Materials, Inc. | Formulations for advanced polishing pads |
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| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| US11772229B2 (en) | 2016-01-19 | 2023-10-03 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| US11964359B2 (en) | 2015-10-30 | 2024-04-23 | Applied Materials, Inc. | Apparatus and method of forming a polishing article that has a desired zeta potential |
| US11986922B2 (en) | 2015-11-06 | 2024-05-21 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
| US12023853B2 (en) | 2014-10-17 | 2024-07-02 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
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2009
- 2009-05-14 CN CN2009201551129U patent/CN201483382U/en not_active Expired - Lifetime
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