CN201343581Y - Extension device - Google Patents
Extension device Download PDFInfo
- Publication number
- CN201343581Y CN201343581Y CNU2009200677971U CN200920067797U CN201343581Y CN 201343581 Y CN201343581 Y CN 201343581Y CN U2009200677971 U CNU2009200677971 U CN U2009200677971U CN 200920067797 U CN200920067797 U CN 200920067797U CN 201343581 Y CN201343581 Y CN 201343581Y
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- Prior art keywords
- vacuum
- generating device
- equipment
- port
- vacuum generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 30
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 239000002912 waste gas Substances 0.000 claims abstract description 8
- 238000011084 recovery Methods 0.000 claims abstract description 6
- 238000000407 epitaxy Methods 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 27
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 238000012986 modification Methods 0.000 abstract description 3
- 230000004048 modification Effects 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 20
- 238000013022 venting Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009423 ventilation Methods 0.000 description 3
- 239000000567 combustion gas Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
一种外延设备，包括反应室系统、设备排风系统以及真空控制系统；所述真空控制系统包括真空控制系统接口)、隔离阀、释放阀、真空发生装置、气压计、真空发生装置排气口和释放口；所述真空控制系统接口连接有隔离阀、气压计和释放阀；所述隔离阀的另一端连接至真空发生装置；所述释放阀的另一端连接释放口；所述真空发生装置连接有真空发生装置排气口；所述真空发生装置排气口直接连接至废气回收塔；所述释放口设置于设备排风系统中，且与设备排风系统出风口之间不设置任何部件。本实用新型的优点在于，通过对真空发生装置排气口和释放口的改造，避免了其对外延设备内部各种部件的腐蚀，提高了现有厂房热排风系统的寿命。
An epitaxy device, comprising a reaction chamber system, an equipment exhaust system, and a vacuum control system; the vacuum control system includes a vacuum control system interface), an isolation valve, a release valve, a vacuum generating device, an air gauge, and a vacuum generating device exhaust port and a release port; the vacuum control system interface is connected with an isolation valve, an air gauge and a release valve; the other end of the isolation valve is connected to a vacuum generating device; the other end of the release valve is connected to a release port; the vacuum generating device The exhaust port of the vacuum generating device is connected; the exhaust port of the vacuum generating device is directly connected to the waste gas recovery tower; the release port is set in the equipment exhaust system, and there is no component between the equipment exhaust system air outlet . The utility model has the advantage that, through the modification of the exhaust port and the release port of the vacuum generating device, the corrosion of various parts inside the epitaxial equipment is avoided, and the service life of the heat exhaust system of the existing workshop is improved.
Description
[technical field]
The utility model relates to semiconductor devices, relates in particular to epitaxial device.
[background technology]
The silicon single crystal extension is several microns to the tens microns monocrystalline silicon layers of method regrowth one deck by chemical vapour deposition on the polished silicon slice surface, and silicon epitaxial material is a base mateiral important in unicircuit and the discrete device.Silicon epitaxial wafer can provide polished section unexistent electrical parameter, removes many in crystal growth be processed into surface and the near surface flaw that forms in the substrate material process.The silicon single crystal epitaxial wafer is mainly used in CMOS logical circuit, DRAM and discrete device manufacturing.Epitaxy technology is a kind of important means that solves major diameter single crystal silicon chip surface imperfection.
Epitaxial device is the key equipment of extension, and the performance of epitaxial device directly influences the quality of silicon epitaxial wafer.Be the local structure synoptic diagram of epitaxial device in the prior art as shown in Figure 1.General in the world epitaxial device for example generally includes reactor chamber systems, equipment exhaust system and vacuum-control(led) system in the epitaxial device of the models such as EPIPRO5000 of CSD EPITAXY company production now.
Described reactor chamber systems comprises: reaction chamber bell jar 110, reaction chamber chassis 111, reaction chamber carriage 112, a plurality of double-layer seal circle 113, intake ducting 121 and gas exhaust duct 122.The structure of described reactor chamber systems is: reaction chamber bell jar 110 places on the reaction chamber chassis 111, reaction chamber carriage 112 places the bottom of reaction chamber bell jar 110 and on every side, be used for fixing reaction chamber bell jar 110, adopt a plurality of double-layer seal circles 113 to fasten between reaction chamber bell jar 110, reaction chamber chassis 111 and the reaction chamber carriage 112.Described intake ducting 121 and gas exhaust duct 122 are connected to the internal space of reaction chamber bell jar 110, are used to reactor chamber systems transport of reactant gases body and combustion gas.
Described equipment exhaust system is provided with equipment exhaust system blast inlet 141 and equipment air draft air outlet 142.
Described vacuum-control(led) system comprises segregaion valve 131, relief valve 132, vacuum generator 133, vacuum generator nitrogen inlet 134, vacuum generator starting valve 135, weather gauge 136, vacuum generator venting port 137 and liberation port 138.Described vacuum-control(led) system comes down to a kind of double density closed system.Described epitaxial device also comprises exhaust system, be used for equipment cavity 111 is discharged epitaxial device by the gas that relief valve discharges, and keeping the device interior parts to be in the state that airiness is arranged, described exhaust system comprises exhaust system blast inlet 141, exhaust system air outlet 142.Described epitaxial device also comprises the hot type wind system, is used to discharge the heat that epitaxial device (especially reactor chamber systems) is produced at work, prevents that the temperature of equipment is too high.Described hot type wind system comprises hot type wind system blast inlet 151 and hot type wind system air outlet 152.
Epitaxial substrate is positioned in the reaction chamber 110, and intake ducting 121 is connected with reaction chamber 110 with gas exhaust duct 122, is used to reaction chamber that extension gas and the reacted waste gas of discharge are provided.Described vacuum-control(led) system interface 130 1 ends are connected to the space between the ectonexine of double-layer seal circle 113, and the other end is connected with vacuum generator 133 by segregaion valve 131.Weather gauge 136 is arranged at vacuum-control(led) system interface 130 at a section between the space between the ectonexine of segregaion valve 131 and double-layer seal circle 113.Relief valve 132 a section between segregaion valve 131 and weather gauge 136 is identical.Because epitaxy technique often can be used the poisonous or deleterious gas of human body, so the gas in the equipment can not directly be discharged into production plant.Described relief valve 132 is used at epitaxial device under the situation that does not need to seal, and discharges that double density closes the spatial vacuum pressure in the vacuum-control(led) system, makes this enclosed space be in normal pressure.The gas that discharges is to exhaust system, and then device for transferring.
Described vacuum generator nitrogen inlet 134 is connected with vacuum generator 133 by vacuum generator starting valve 135, is used to vacuum generator 133 that high speed nitrogen is provided.Vacuum generator venting port 137 also is connected with vacuum generator 133, is used to discharge high speed nitrogen.The principle of vacuum generator is a venturi principle, and promptly high speed airflow can be at the air pressure that reduces surrounding environment.Opening segregaion valve 131 and closing under the situation of relief valve 132, high speed nitrogen enters vacuum generator 133 by vacuum generator nitrogen inlet 134 and is flowed out by vacuum generator venting port 137, thereby the air pressure of enclosed space is to target value in the reduction equipment vacuum-control(led) system.
Direction shown in dashed path among the figure and the arrow is the equipment direction of flowing through of downstream in working order.
In epitaxially grown process, owing to may use some corrosive gasess in the epitaxial process, the source material reacts at substrate surface, also might generate some and have corrosive gas, as HCl etc.In the process of reactor chamber systems work, because sealing-ring can not be absolute airtight, so these gases can enter the space between the ectonexine of double-layer seal circle 113.And in the process of the gas that leaks in the space between the ectonexine of opening relief valve 132 further releasing arrangement double-layer seal circles 113, these corrosive gasess can enter in the exhaust system of equipment by relief valve 132 and liberation port 138, and with the air-flow of exhaust system, from exhaust system air outlet device for transferring.And, under the state of equipment work, need open isolation method 131 and vacuum generator starting valve 135, in vacuum generator 133, feed high speed nitrogen and carry out air pressure adjustment, in this state, some corrosive gases can enter vacuum generator 133 and is blended in the high speed nitrogen by segregaion valve 131, in the lump by vacuum generator venting port 137 near the device for transferring hot type wind system air outlet 152, enter the hot type wind system of factory building.
The situation of above-mentioned corrosive gases access arrangement exhaust system and hot type wind system is in case generation brings following problem easily:
1, the liberation port 138 of epitaxial device is arranged near exhaust system blast inlet 141 places, along air-flow to the back also have a lot of parts, as intake ducting 121 etc., this corrosive gases that comes out from liberation port will continue to flow through after the surface of miscellaneous part in downstream, ability discharge system, therefore the surface of these parts in downstream is corroded easily, thereby causes the performance of equipment and life-span all to be subjected to influence.
2, vacuum generator venting port 137 is arranged in the equipment hot type wind system, because equipment hot type wind system need tolerate the high temperature more than 200 ℃, therefore inwall normally adopts metallic substance to make, the erosion resistance extreme difference, therefore such design causes equipment hot type wind system inwall to suffer serious corrosion damage easily.
[summary of the invention]
Technical problem to be solved in the utility model is, a kind of epitaxial device is provided, and can avoid the corrosive gases of discharging that the miscellaneous part of epitaxial device is impacted.
In order to address the above problem, the utility model provides a kind of epitaxial device, comprises reactor chamber systems, equipment exhaust system and vacuum-control(led) system; Described vacuum-control(led) system comprises the vacuum-control(led) system interface), segregaion valve, relief valve, vacuum generating device, weather gauge, vacuum generating device venting port and liberation port; Described vacuum-control(led) system interface is connected with segregaion valve, weather gauge and relief valve; The other end of described segregaion valve is connected to vacuum generating device; The other end of described relief valve connects liberation port; Described vacuum generating device is connected with the vacuum generating device venting port; Described vacuum generating device venting port is connected directly to the waste gas recovery tower; Described liberation port is arranged in the equipment exhaust system, and and equipment exhaust system air outlet between any parts are not set.
As optional technical scheme, described vacuum generating device comprises vacuum generator, nitrogen inlet and segregaion valve, and described vacuum generator is connected to nitrogen inlet by segregaion valve.
As optional technical scheme, described epitaxial device is the silicon single crystal epitaxial device.
Advantage of the present utility model is, by the transformation to vacuum generating device venting port and liberation port, has avoided its corrosion to the various parts in epitaxial device inside.
[description of drawings]
Accompanying drawing 1 is depicted as the local structure synoptic diagram of epitaxial device in the prior art;
The local structure synoptic diagram of a kind of epitaxial device that is provided in the embodiment of the present utility model is provided accompanying drawing 2.
[embodiment]
The embodiment of the epitaxial device that the utility model is provided below in conjunction with accompanying drawing elaborates.
Accompanying drawing 2 is depicted as the local structure synoptic diagram of a kind of epitaxial device provided in the present embodiment, comprises reactor chamber systems, equipment exhaust system and vacuum-control(led) system.
Described reactor chamber systems comprises: reaction chamber bell jar 210, reaction chamber chassis 211, reaction chamber carriage 212, a plurality of double-layer seal circle 213, intake ducting 221 and gas exhaust duct 222.The structure of described reactor chamber systems is: reaction chamber bell jar 210 places on the reaction chamber chassis 211, reaction chamber carriage 212 places around the reaction chamber bell jar 210, be used for fixing reaction chamber bell jar 210, adopt a plurality of double-layer seal circles 213 to fasten between reaction chamber bell jar 210, reaction chamber chassis 211 and the reaction chamber carriage 212.Described intake ducting 221 and gas exhaust duct 222 are connected to the internal space of reaction chamber bell jar 210, are used to reaction chamber transport of reactant gases body and combustion gas.
Described equipment exhaust system is provided with equipment exhaust system blast inlet 241 and equipment air draft air outlet 242.
Described vacuum-control(led) system comprises vacuum-control(led) system interface 230, segregaion valve 231, relief valve 232, vacuum generating device 239, weather gauge 236, vacuum generating device venting port 237 and liberation port 238.Described vacuum-control(led) system interface 230 1 ends are connected to the space between the ectonexine of double-layer seal circle 213, and the other end is connected with segregaion valve 231, weather gauge 236 and relief valve 232; The other end of described segregaion valve 231 is connected to vacuum generating device 239.The other end of described relief valve 232 connects liberation port 238.Described vacuum generating device 239 is connected with vacuum generating device venting port 237.
In this embodiment, described vacuum generating device venting port 237 is connected directly to waste gas recovery tower 260; Described liberation port 238 is arranged in the equipment exhaust system, and and equipment exhaust system air outlet 242 between any parts are not set.
Described epitaxial device is the silicon single crystal epitaxial device.
In this embodiment, described vacuum generating device 239 is to utilize venturi principle, and promptly high speed airflow can produce vacuum in the method for the air pressure that reduces surrounding environment.Described vacuum generating device 239 comprises vacuum generator 233, nitrogen inlet 234 and segregaion valve 235, and described vacuum generator 233 is connected to nitrogen inlet 234 by segregaion valve 235.Described vacuum generating device 239 also can be other vacuum generating device, for example vacuum mechanical pump or vacuum mechanical pump and diffusion pump machinery etc.
The characteristics of this embodiment are, double density closed system to epitaxial device improves, be that described vacuum generating device venting port 237 is connected directly to waste gas recovery tower 260, and described liberation port 238 is arranged in the equipment exhaust system, and and equipment exhaust system air outlet 242 between any parts are not set.
Because the waste gas that the venting port of vacuum generating device is discharged has corrodibility, if the hot ventilation system of access arrangement can be corroded the inwall of hot ventilation system.And adopt is the more inwall of heat-exchange ventilating system of corrosion-resistant resistant to elevated temperatures material, and cost is very expensive again, is unfavorable for saving cost.More efficient methods is that described vacuum generating device venting port 237 is connected directly to waste gas recovery tower 260, and has avoided directly entering the damage that the hot ventilation system of epitaxial device causes metal inner surface.
Described liberation port 238 is arranged in the equipment exhaust system, and and equipment exhaust system air outlet 242 between any parts are not set.The above-mentioned pipeline that can be connected to relief valve by prolongation that is provided with is arranged at liberation port near the equipment exhaust system air outlet and realizes.The corrosive gases that above-mentioned design can be avoided discharging from liberation port 238 is directly discharged by equipment exhaust system air outlet 242, can not cause damage to the miscellaneous part in the equipment.
This embodiment is improved by the double density closed system to epitaxial device, has avoided its corrosion to the various parts in epitaxial device inside.
The above only is a preferred implementation of the present utility model; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection domain of the present utility model.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2009200677971U CN201343581Y (en) | 2009-02-17 | 2009-02-17 | Extension device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2009200677971U CN201343581Y (en) | 2009-02-17 | 2009-02-17 | Extension device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201343581Y true CN201343581Y (en) | 2009-11-11 |
Family
ID=41275164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2009200677971U Expired - Lifetime CN201343581Y (en) | 2009-02-17 | 2009-02-17 | Extension device |
Country Status (1)
| Country | Link |
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| CN (1) | CN201343581Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102330147A (en) * | 2010-07-14 | 2012-01-25 | 郭志凯 | Novel epitaxial device for producing silicon chips and system thereof |
| CN103628140A (en) * | 2013-10-09 | 2014-03-12 | 东莞市天域半导体科技有限公司 | Dual sealing structure for ultra high temperature double-layer water cooling quartz tube vacuum chamber |
| CN111850700A (en) * | 2020-07-09 | 2020-10-30 | 河南晶鸿光电科技有限公司 | Crystal growth system and crystal growth method |
-
2009
- 2009-02-17 CN CNU2009200677971U patent/CN201343581Y/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102330147A (en) * | 2010-07-14 | 2012-01-25 | 郭志凯 | Novel epitaxial device for producing silicon chips and system thereof |
| CN102330147B (en) * | 2010-07-14 | 2015-11-25 | 郭志凯 | A kind of silicon chip produces epitaxial device and system thereof |
| CN103628140A (en) * | 2013-10-09 | 2014-03-12 | 东莞市天域半导体科技有限公司 | Dual sealing structure for ultra high temperature double-layer water cooling quartz tube vacuum chamber |
| CN103628140B (en) * | 2013-10-09 | 2016-08-17 | 东莞市天域半导体科技有限公司 | A kind of superhigh temperature Double water-cooled quartz tube vacuum chamber double sealing structure |
| CN111850700A (en) * | 2020-07-09 | 2020-10-30 | 河南晶鸿光电科技有限公司 | Crystal growth system and crystal growth method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SHANGHAI SIMGUI SCIENCE AND TECHNOLOGY CO., LTD. Free format text: FORMER NAME: PROUD OF THE NEW SHANGHAI TECHNOLOGY CO. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: No. 200, Pratt & Whitney Road, Shanghai, Jiading District: 201821 Patentee after: Shanghai Simgui Technology Co., Ltd. Address before: No. 200, Pratt & Whitney Road, Shanghai, Jiading District: 201821 Patentee before: Shanghai Xin'ao Science and Technology Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20091111 |