CN201282132Y - Washing device for silicon wafer - Google Patents
Washing device for silicon wafer Download PDFInfo
- Publication number
- CN201282132Y CN201282132Y CNU2008201084127U CN200820108412U CN201282132Y CN 201282132 Y CN201282132 Y CN 201282132Y CN U2008201084127 U CNU2008201084127 U CN U2008201084127U CN 200820108412 U CN200820108412 U CN 200820108412U CN 201282132 Y CN201282132 Y CN 201282132Y
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaning
- nozzle
- rinse bath
- cleaning device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 238000005406 washing Methods 0.000 title 1
- 238000004140 cleaning Methods 0.000 claims abstract description 104
- 239000013043 chemical agent Substances 0.000 abstract description 2
- 239000003344 environmental pollutant Substances 0.000 abstract description 2
- 231100000719 pollutant Toxicity 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 4
- 239000013078 crystal Substances 0.000 description 16
- 239000012530 fluid Substances 0.000 description 16
- 239000008367 deionised water Substances 0.000 description 15
- 229910021641 deionized water Inorganic materials 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 238000005498 polishing Methods 0.000 description 10
- 239000000243 solution Substances 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004901 spalling Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 210000002421 cell wall Anatomy 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
Images
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
A wafer cleaning device comprises a cleaning groove and a liquid feeding device for feeding cleaning liquid to the cleaning groove. The liquid feeding device comprises a bracket, a connecting pipe connected with the bracket, and at least a nozzle connected with the connecting pipe used for feeding cleaning liquid to the cleaning groove. The wafer cleaning device can uniformly wash away pollutant residue, especially chemical agent residue on the surface of the wafer.
Description
Technical field
The utility model relates to technical field of manufacturing semiconductors, particularly a kind of wafer cleaning equipment.
Background technology
In production process of semiconductor device, cleaning is one of wherein most important and the most frequent step.In general, in the whole manufacturing process of semiconductor device, the step of the step up to 20% for cleaning.The purpose of cleaning is for fear of the pollution to semiconductor device of micro ion and metal impurities, to such an extent as to influence the performance and the qualification rate of semiconductor device.
Generally, wafer all will clean with deionized water after adopting the chemical reagent cleaning again, to remove the residual cleaning reagent of crystal column surface, for example No. 200510000354.3 disclosed method for cleaning wafer of Chinese patent application.
In semiconductor device fabrication process, adopt after the electroplating technology deposited copper, adopt H
2SO
4And H
2O
2Mixed solution clean, with the attenuate crystal round fringes, afterwards, adopt the washed with de-ionized water wafer, with the residual cleaning agent in cleaning wafer edge, after cleaning is finished, enter CMP (Chemical Mechanical Polishing) process, so that metallic copper is carried out planarization.Existing cleaning equipment is with reference to the accompanying drawings shown in 1, comprise, be used to hold wafer 4 and cleaning fluid (deionized water) 5 and carry out the rinse bath 1 that wafer cleans, also have the wafer frame (not shown) that links to each other and be used for fixing wafer with the base of rinse bath in the rinse bath 1, and link to each other with the wafer frame and to be used to drive the motor (not shown) of wafer rotation; Be used for cleaning fluid is conveyed into the feeding device of rinse bath; Be communicated with rinse bath, be used for the pumping equipment (not shown) that cleaning fluid is discharged from rinse bath; As shown in accompanying drawing 1, the nozzle 3 that described feeding device comprises support 2 and is connected with support, described support is connected on the rinse bath, the delivery port of described nozzle 3 and wafer are put up miter angle, when cleaning, the hydraulic pressure instability of the deionized water that is used to clean, cause the drop point instability of deionized water on crystal column surface, cause certain several position of wafer can not clean to or clean unclean easily, and wafer rotates under the drive of motor in the cleaning process, and the nozzle of described device has only 1, it is inhomogeneous to cause on the wafer different parts to clean, and has the residual of cleaning fluid on the wafer.
With the copper metal line is example, after adopting the wafer cleaning equipment cleaning wafer shown in the accompanying drawing 1, enters CMP (Chemical Mechanical Polishing) process, because there is H in some position of crystal column surface
2SO
4And H
2O
2Mixed solution residual, in CMP (Chemical Mechanical Polishing) process, crystal column surface exists the residual position of cleaning fluid can produce peeling phenomenon, and as shown in Figure 2, the part 6 and 7 of irising out with black line in the accompanying drawing 2 is the peeling phenomenon that crystal column surface produces in the CMP (Chemical Mechanical Polishing) process.
Therefore, must improve equipment, residual with the cleaning fluid of removing crystal column surface fully.
The utility model content
In view of this, the technical problem that the utility model solves provides a kind of wafer cleaning device, solves the defective that the cleaning of wafer cleaning equipment is inhomogeneous and cleaning is clean inadequately in the prior art, improves uniformity and efficient that wafer cleans.
A kind of wafer cleaning device comprises: rinse bath; Feed the feeding device of cleaning solution in rinse bath, described feeding device comprises support, the tube connector that is connected with support, and the more than one nozzle that is communicated with tube connector, described nozzle feeds cleaning solution in rinse bath.
Preferably, described nozzle quantity is 8～20, and the aperture of described nozzle is 0.6～1.5mm.
Preferably, described nozzle is evenly arranged.
Preferably, described tube connector is connected with support is vertical.
Preferably, described nozzle and tube connector vertical connection.
Compared with prior art, such scheme has the following advantages:
The wafer cleaning device that the utility model provides comprises: rinse bath; In rinse bath, feed the feeding device of cleaning solution, described feeding device comprises support, the tube connector that is connected with support, the more than one nozzle that is communicated with tube connector, described nozzle feeds cleaning solution in rinse bath, because described more than one nozzle is sprayed onto crystal column surface with cleaning solution uniformly, therefore, the pollutant that can evenly wash crystal column surface is residual, especially chemical agent residue.
Description of drawings
Fig. 1 is the structural representation of prior art wafer cleaning device;
The blemish surface that the wafer that Fig. 2 cleans for the prior art wafer cleaning device produces in subsequent technique;
Fig. 3 is the structural representation of the utility model wafer cleaning device;
Fig. 4 produces number of defects purpose comparison diagram behind the utility model wafer cleaning device and the prior art wafer cleaning device cleaning wafer surface;
Fig. 5 produces number of defects purpose comparison diagram behind another wafer cleaning device of the utility model and the prior art wafer cleaning device cleaning wafer surface.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, embodiment of the present utility model is described in detail below in conjunction with accompanying drawing.
The purpose of this utility model is to provide a kind of wafer cleaning device, the wafer cleaning device that solves prior art has only a nozzle, the deionized water that comes out from nozzle when cleaning wafer causes cleaning uneven defective in the cleaning dynamics difference of crystal column surface different parts.
A kind of wafer cleaning device comprises: rinse bath; Feed the feeding device of cleaning solution in rinse bath, described feeding device comprises support, the tube connector that is connected with support, and the more than one nozzle that is communicated with tube connector, described nozzle feeds cleaning solution in rinse bath.
With reference to the accompanying drawings shown in 3, the structural representation of the wafer cleaning device that provides for present embodiment, described wafer cleaning device comprises, rinse bath 10, be used to hold wafer 40 and cleaning fluid (deionized water) 50 and carry out the wafer cleaning, identical with the structure in the wafer cleaning device rinse bath of prior art, also has the wafer frame (not shown) that links to each other and be used for fixing wafer with the base of rinse bath 10 in the described rinse bath 10, and link to each other with the wafer frame and to be used to drive the motor (not shown) of wafer frame rotation, when cleaning, wafer is fixed on the wafer frame, motor drives the wafer rotation on wafer frame and the wafer frame, the cleaning fluid that sprays from nozzle (being deionized water in the present embodiment) cleans wafer, after cleaning is finished, motor continues rotation, and deionized water residual on the wafer is thrown out of crystal column surface under action of centrifugal force.
Described wafer cleaning device also comprises the feeding device that is used for cleaning fluid is conveyed into rinse bath, and shown in 3, described feeding device comprises support 20 with reference to the accompanying drawings, the tube connector 60 that is connected with support 20, the more than one nozzle 30 that is communicated with tube connector 60.
Described support 20 is connected on the rinse bath, and in one embodiment, support 20 is connected with the sidewall of rinse bath.Be more preferably, in another embodiment, described support 20 bottoms have mobile device, and the nozzle that can drive on tube connector and the tube connector moves along crystal column surface.Described mobile device for example is a pulley, is arranged on the sidewall or direct the placement on the ground of rinse bath.
Described tube connector 60 is fixedly connected on the support 20, and tube connector 60 can be to weld together with the connected mode of support 20, can directly be one also, and for example, direct pouring is integral.Preferably, described tube connector 60 and 20 vertical connections of support that is to say that the center line of described tube connector 60 becomes an angle of 90 degrees with the center line of support 20.
On the tube connector 30, be provided with more than one nozzle 60, described nozzle becomes even or inhomogeneous arranging towards the wafer to be cleaned that is positioned at rinse bath, and preferably, described nozzle is evenly arranged.
Adopt more than one nozzle, the flow that adds the cleaning fluid that sprays in the giant that can be suitable improves the efficient of cleaning.More than one nozzle is evenly arranged, can make the cleaning fluid that sprays in the nozzle evenly drop on crystal column surface to be cleaned, improve the uniformity of cleaning.
The preferred nozzle quantity of present embodiment is 8 to 20, evenly arranges, and preferred its shape of nozzle is circular, and the aperture is 0.6～1.5mm.Adopt 8 to 20 nozzles of evenly arranging, can make 8 to 20 nozzles just in time all be positioned at directly over the wafer, make the flow of the cleaning fluid that sprays in the nozzle be adjusted to only numerical value, and the drop point of cleaning fluid is evenly arranged on the surface of wafer, be more prone to evenly, completely the residual contaminants on cleaning wafer surface.
And a plurality of nozzles of evenly arranging can also solve in the prior art because the hydraulic pressure instability of the deionized water that is used to clean causes the unsettled defective of the drop point of deionized water on crystal column surface.
Can become angle arbitrarily between described nozzle and the tube connector, preferably, described nozzle is connected with wafer is vertical.
Identical with the wafer cleaning device of prior art, the described wafer cleaning device of present embodiment also has the connection rinse bath, be used for pumping equipment (not shown) that cleaning fluid is discharged from rinse bath, described pumping equipment is arranged on the cell wall or the bottom of rinse bath, is positioned at the below of wafer to be cleaned.
With reference to the accompanying drawings shown in 4, produce number of defects purpose comparison diagram behind the utility model wafer cleaning device and the prior art wafer cleaning device cleaning wafer surface, wherein, data 1-4 carries out chemico-mechanical polishing after the wafer cleaning device of employing prior art cleans, the wafer number of surfacial spalling, wherein, wafer to be cleaned is process H
2SO
4And H
2O
2The wafer that cleans of mixed solution.Data 5-7 carries out chemico-mechanical polishing after adopting the described wafer cleaning device of present embodiment to clean, the wafer number of surfacial spalling, wherein, the concrete structure of the described wafer cleaning device of present embodiment is: the structure of rinse bath and pumping equipment is same as the prior art, the feeding device structure is, tube connector is arranged on the support, and be connected with support is vertical, 10 nozzles vertical with crystal column surface to be cleaned are set on the described tube connector, nozzle form is circular, and the aperture is 1.0mm, and the cleaning fluid that is adopted is a deionized water, the total flow of deionized water is 800ml/min in 10 nozzles, and wafer to be cleaned is for through H
2SO
4And H
2O
2The wafer that cleans of mixed solution.Therefrom as can be seen, after the described wafer cleaning device of employing present embodiment cleaned, during chemico-mechanical polishing, the surface produced the wafer number that peels off defective and significantly reduces, and illustrated and adopted the described wafer cleaning device of present embodiment to reach better cleaning performance.
With reference to the accompanying drawings shown in 5, for producing number of defects purpose comparison diagram behind another the utility model wafer cleaning device and the prior art wafer cleaning device cleaning wafer surface, wherein, data 1-3 carries out chemico-mechanical polishing after the wafer cleaning device of employing prior art cleans, the wafer number of surfacial spalling, wherein, wafer to be cleaned is process H
2SO
4And H
2O
2The wafer that cleans of mixed solution.Data 4-7 carries out chemico-mechanical polishing after adopting the described wafer cleaning device of present embodiment to clean, the wafer number of surfacial spalling, wherein, the concrete structure of the described wafer cleaning device of present embodiment is: the structure of rinse bath and pumping equipment is same as the prior art, the feeding device structure is, tube connector is arranged on the support, and be connected with support is vertical, 12 nozzles vertical with crystal column surface to be cleaned are set on the described tube connector, nozzle form is circular, and the aperture is 1.2mm, and the cleaning fluid that is adopted is a deionized water, the total flow of deionized water is 800ml/min in 12 nozzles, and wafer to be cleaned is for through H
2SO
4And H
2O
2The wafer that cleans of mixed solution.Therefrom as can be seen, after the described wafer cleaning device of employing present embodiment cleaned, during chemico-mechanical polishing, the surface produced the wafer number that peels off defective and significantly reduces, and illustrated and adopted the described wafer cleaning device of present embodiment to reach better cleaning performance.
Though the utility model discloses as above with preferred embodiment, the utility model is not to be defined in this.Any those skilled in the art in not breaking away from spirit and scope of the present utility model, all can do various changes and modification, and therefore protection range of the present utility model should be as the criterion with claim institute restricted portion.
Claims (6)
1. a wafer cleaning device comprises: rinse bath; In rinse bath, feed the feeding device of cleaning solution, it is characterized in that described feeding device comprises support, the tube connector that is connected with support, the more than one nozzle that is communicated with tube connector, described nozzle feeds cleaning solution in rinse bath.
2. according to the described wafer cleaning device of claim 1, it is characterized in that described nozzle quantity is 8～20.
3. according to the described wafer cleaning device of claim 2, it is characterized in that the aperture of described nozzle is 0.6～1.5mm.
4. according to the described wafer cleaning device of claim 1, it is characterized in that described nozzle is evenly arranged.
5. according to the described wafer cleaning device of claim 1, it is characterized in that described tube connector is connected with support is vertical.
6. according to the described wafer cleaning device of claim 1, it is characterized in that described nozzle and tube connector vertical connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201084127U CN201282132Y (en) | 2008-05-30 | 2008-05-30 | Washing device for silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008201084127U CN201282132Y (en) | 2008-05-30 | 2008-05-30 | Washing device for silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201282132Y true CN201282132Y (en) | 2009-07-29 |
Family
ID=40929000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008201084127U Expired - Lifetime CN201282132Y (en) | 2008-05-30 | 2008-05-30 | Washing device for silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201282132Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103128073A (en) * | 2011-12-01 | 2013-06-05 | 无锡华润上华科技有限公司 | Wafer washing method, wafer washing device and wafer |
| CN107993919A (en) * | 2017-11-21 | 2018-05-04 | 长江存储科技有限责任公司 | Chemical liquids spray tube and cleaning device for wafer cleaning |
| CN109759937A (en) * | 2019-01-30 | 2019-05-17 | 西安奕斯伟硅片技术有限公司 | A kind for the treatment of method and apparatus of silicon wafer |
| CN110398500A (en) * | 2019-08-06 | 2019-11-01 | 武汉鼎泽新材料技术有限公司 | Evaluate the method and experimental provision of wafer cleaning efficiency |
-
2008
- 2008-05-30 CN CNU2008201084127U patent/CN201282132Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103128073A (en) * | 2011-12-01 | 2013-06-05 | 无锡华润上华科技有限公司 | Wafer washing method, wafer washing device and wafer |
| CN107993919A (en) * | 2017-11-21 | 2018-05-04 | 长江存储科技有限责任公司 | Chemical liquids spray tube and cleaning device for wafer cleaning |
| CN109759937A (en) * | 2019-01-30 | 2019-05-17 | 西安奕斯伟硅片技术有限公司 | A kind for the treatment of method and apparatus of silicon wafer |
| CN110398500A (en) * | 2019-08-06 | 2019-11-01 | 武汉鼎泽新材料技术有限公司 | Evaluate the method and experimental provision of wafer cleaning efficiency |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20090729 |