CN201185171Y - Electrode with improved plasma uniformity - Google Patents
Electrode with improved plasma uniformity Download PDFInfo
- Publication number
- CN201185171Y CN201185171Y CNU2008200036018U CN200820003601U CN201185171Y CN 201185171 Y CN201185171 Y CN 201185171Y CN U2008200036018 U CNU2008200036018 U CN U2008200036018U CN 200820003601 U CN200820003601 U CN 200820003601U CN 201185171 Y CN201185171 Y CN 201185171Y
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- electrode
- plasma uniformity
- plasma
- current source
- improved plasma
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Abstract
The utility model provides an electrode with improve plasma degree of consistency, it is used for a cavity that can produce plasma. The electrode structure mainly comprises an electrode plate, a micro-interference slot and a plurality of electrodes, wherein the electrode plate is provided with a first surface and a second surface which are electrically connected with a radio-frequency current source, and the micro-interference slot is symmetrically etched on one side of the electrode plate. The perturbation slot and the radio frequency current source are in the same direction. By well designing the perturbation slot, the electrode can effectively improve the uniformity of the plasma, is suitable for substrates of various materials, and can be widely applied to plasma manufacturing systems.
Description
Technical field
The utility model is about a kind of electrode, and it is particularly related to a kind of electrode slice of tool adjustability Electric Field Distribution, and it can be applied in the plasma reaction device.
Background technology
In current semiconductor fabrication, plasma can carry out very effective plasma auxiliary chemical vapor deposition (plasma-assisted chemical vapor deposition), plasma assisted etch (plasma-assisted etching) and plasma producing high-molecular thin film fabrication and etching work such as (plasma polymerization).And multiple now industry all applies to this manufacturing technology, as Thin Film Transistor-LCD (Thin film transistor liquid crystal display, TFT LCD) factory, solar energy factory and wafer factory.The manufacture of the siliceous thin-film solar cells of traditional crystallite in the solar cell for example, promptly usually earlier with plasma-enhanced chemical formula vapour deposition (Plasma enhance chemical vapor deposition, PECVD) a large amount of hydrogen of feeding and silane are done dilution in the manufacturing, form the siliceous film of crystallite by reaction again and promote its every electrical characteristics to realize the target of high efficiency production capacity.And along with the lifting of these several manufacturing ionic medium body frequencies, its plated film speed also increases thereupon, yet when the substrate area of desiring plated film increases, the electromagnetic wave of Chuan Diing will cause the variation of electric field because of its phase change thereon, the uniformity of plasma and the efficient of plated film have relatively also been influenced, especially when coated basal plate size now increased to the developing large-area glass substrate more than a square centimeter of current TFT factory, solar energy factory by eight inches, the 12 inches wafers in past, this problem will have a strong impact on the efficient and the cost of volume production.
In order to address the above problem, having to provide a kind of electrode to overcome the shortcoming of prior art.
The utility model content
The purpose of this utility model is to provide a kind of electrode that improves plasma uniformity that has, and it has thin film deposition and the etching manufacturing of adjustable electric field to be applied in plasma system.
For achieving the above object, the utility model provides a kind of electrode that improves plasma uniformity that has, and it is used for a cavity that can produce plasma.It mainly comprises an electrode slice; One perturbation slotted eye.Wherein, this electrode slice has a first surface and a second surface, and it is electrically connected at a radio-frequency electric current source, is used to produce an electric field; The perturbation slotted eye, its symmetry is etched in one side of this electrode slice, is used to control this electric-field intensity distribution, and this perturbation slotted eye and this radio-frequency electric current source are same direction.
According to a feature of the present utility model, wherein this has the electrode that improves plasma uniformity and can be applied to aumospheric pressure cvd system, low-pressure chemical vapor deposition system, high density plasma CVD system, plasma auxiliary chemical vapor deposition system, inductively coupled plasma ion(ic) etching system.
According to a feature of the present utility model, wherein the shape of this electrode slice be selected from square, circular, hexagon, polygon one of them.
According to a feature of the present utility model, wherein the operational frequency range of this radio-frequency electric current source be 10MHz to 10GHz, preferably be 13.56MHz.
According to a feature of the present utility model, wherein the size range of this electrode slice be 10,000/to half guide wavelength.
According to a feature of the present utility model, wherein to be fed into the impedance of this electrode slice be 1 to 300 ohm to this radio-frequency electric current source.
Have the electrode that improves plasma uniformity and oversimplify, can make the commercialization value that large tracts of land is made substrate, had height, can be widely used in the plasma reaction manufacturing equipment.
Below will do detailed description to above-mentioned explanation and ensuing execution mode, and provide further explanation the utility model with an embodiment.
Description of drawings
For above-mentioned and other purpose of the utility model, feature, advantage and embodiment can be become apparent, being described in detail as follows of appended accompanying drawing:
Fig. 1 is shown as the structural representation with the electrode that improves plasma uniformity of the present utility model;
Fig. 2 is shown as the distribution map of the electric field of the electrode that improves plasma uniformity when not having the perturbation slotted eye that have of the present utility model;
Fig. 3 is shown as the distribution map of the electric field with the electrode that improves plasma uniformity of the present utility model;
Fig. 4 is shown as capacitance coupling type plasma device of the present utility model; And
Fig. 5 is shown as jet-propelled capacitance coupling plasma apparatus of the present utility model.
Wherein, Reference numeral:
100 have the electrode that improves plasma uniformity
110 electrode slices, 111 first surfaces, 112 second surfaces
120 perturbation slotted eyes, 130 radio-frequency electric current source
200 capacitance coupling type plasma devices, 210 reative cells, 211 first surfaces, 212 second surfaces, 213 steam vents, 214 air admission holes 220 are made substrate 230 microscope carriers 240 radio-frequency electric current source
300 jet-propelled capacitance coupling plasma apparatus 310 reative cells 311 first surfaces 312 second surfaces 313 steam vents 320 microscope carriers
330 make substrate 340 radio-frequency electric current source 350 air admission holes
Embodiment
Though the utility model can show as multi-form embodiment, accompanying drawing and following explanation are preferred embodiment of the present utility model, and please understand and disclosed hereinly implement example for of the present utility model one, and are not in order to restriction the utility model.
Now please refer to Fig. 1, it is shown as the structural representation that improves the electrode 100 of plasma uniformity according to having of the utility model embodiment.According to a kind of embodiment with the electrode 100 that improves plasma uniformity of the present utility model, it comprises an electrode slice 110 and a perturbation slotted eye 120 at least.This electrode slice 110 has a first surface 111 and a second surface 112, and it is electrically connected at a radio-frequency electric current source 130, is used to produce an electric field; This perturbation slotted eye 120, its symmetry is etched in one side of this electrode slice 110, and it is used to control this electric-field intensity distribution; Wherein, this perturbation slotted eye 120 is same direction with this radio-frequency electric current source 130.
For the gas-phase deposition system that need utilize the plasma reaction manufacturing, this has the electrode 100 that improves plasma uniformity can be applied to aumospheric pressure cvd system (APCVD), low-pressure chemical vapor deposition system (LPCVD), high density plasma CVD system (HDP CVD), plasma auxiliary chemical vapor deposition system (PECVD), inductively coupled plasma ion(ic) etching system (ICP).
Wherein this material with the electrode 100 that improves plasma uniformity can adopt aluminium, lining aluminium, silicon, quartz, carborundum, silicon nitride, carbon, aluminium nitride, sapphire, polyimides, with Teflon one of them.Cause is solar cell industry now, the manufacturing substrate that is carried out in Electro-Optical Display industry, the IC industry and varying in size, therefore the shape of this electrode slice 110 can adopt square, circular, hexagon, polygon to provide as circular wafers, square glass substrate, use etc. difform manufacturing substrate, in the utility model embodiment, adopt square.
When manufacturing is carried out, need to consider that the frequency of plasma is selected this size with the electrode 100 that improves plasma uniformity, and need to define its size with the guide wavelength of the plasma frequency of operation.This has the radio-frequency electric current source 130 that the electrode 100 that improves plasma uniformity is electrically connected, and its operational frequency range can be 10MHz to 10GHz.Wherein in the utility model embodiment, the optimum operation frequency of this radio-frequency electric current source 130 is 13.56MHz.The size range of this electrode slice 110 is 10,000 under this frequency/and to half guide wavelength, the optimum length L of this electrode slice 110 is 1 ten two six guide wavelength, and its optimum width W is 4 percent seven guide wavelengths.When this external manufacturing is carried out, need to consider the current fed situation of this radio-frequency electric current source 130 to this electrode slice 110, for avoiding excessive reflection of electromagnetic wave situation to produce, the impedance that this radio-frequency electric current source 130 is fed into this electrode slice 110 is that 1 to 300 ohm and its optimum impedance are 50 ohm.On the other hand, this radio-frequency electric current source 130 also can change impedance magnitude to avoid excessive reflected wave generation by an impedance matching circuit.
Be the effect realize that this plasma uniformity with the electrode 100 that improves plasma uniformity improves, this perturbation slotted eye 120 is added in this electrode slice 110, and itself and this radio-frequency electric current source 130 is equidirectional.The current direction that act as 130 feed-ins of this radio-frequency electric current source of perturbation of this perturbation slotted eye 120 changing the Electric Field Distribution situation on this electrode slice 110, and then influences the plasma density on this electrode slice 110.In the design of this perturbation slotted eye 120, this perturbation slotted eye 120 not with make substrate contacts, and when the size of this perturbation slotted eye 120 changes, the level of disruption of feed-in electric current will be changed simultaneously, therefore the size of this perturbation slotted eye 120 needs to be determined under the prerequisite that can well control electric field strength on this electrode slice 110, the length L 1 of this perturbation slotted eye 120 needs less than 95% of these electrode slice 110 length, and 1 need of its width W are less than 1% of these electrode slice 110 width.In the utility model embodiment, the optimum length L1 of this perturbation slotted eye 120 is 84% of these electrode slice 110 length L, and its optimum width W1 is 0.8% of these electrode slice 110 width W.120 of this radio-frequency electric current source 130 and this perturbation slotted eyes also will influence the feed-in current's intensity simultaneously apart from d in addition, it is during because of 130 of this perturbation slotted eye 120 and this radio-frequency electric current source too small apart from d, the perturbation effect of this perturbation slotted eye 120 is bigger, during 130 of this perturbation slotted eye 120 and this radio-frequency electric current source excessive apart from d, the perturbation effect of this perturbation slotted eye 120 is less.The optimum distance d that this perturbation slotted eye 120 and this radio-frequency electric current source are 130 is 0.024% of these electrode slice 110 width in the utility model embodiment.And because of the plasma manufacturing needs to carry out in vacuum and nonpollution environment, thus this have improve plasma uniformity electrode slice 110 when manufacturing is carried out, it is coated with by a grounded metal cavity and carries out the plasma manufacturing.
Now please refer to Fig. 2, it is among first embodiment of the present utility model, it is the distribution map of the electric field of 13.56MHz in frequency of operation that this that does not have this perturbation slotted eye 120 has the electrode 100 that improves plasma uniformity, and wherein the length L of this electrode slice 110 is 1510 millimeters, and its width W is 781 millimeters.The electric field at these electrode slice 110 edges has change by a relatively large margin, and the electric field that it is located on the electric field at this place and this electrode slice 110 seems more inhomogeneous by contrast.Therefore add this perturbation slotted eye 120 to improve the inhomogeneous situation of electric field on this electrode slice 110.Now please refer to Fig. 3, it is the analysis of electric field figure of 13.56MHz in frequency of operation for this has the electrode 100 that improves plasma uniformity, wherein the length L of this electrode slice 110 is 1230 millimeters, its width W is 781 millimeters, and the length L 1 of the perturbation slotted eye 120 that is adopted in the present embodiment is 1275 millimeters, its width W 1 is 10 millimeters, 130 of itself and this radio-frequency electric current source be 30 millimeters apart from d.Little than the change of the electric field among Fig. 2 situation with respect to the change of the electric field on other three edges of this perturbation slotted eye 120 among this Fig. 3, the uneven situation of electric field will be improved because of the adding of this perturbation slotted eye 120 on this electrode slice 110.
Now please refer to Fig. 4, it shows capacitance coupling type plasma device 200 structural representations according to second embodiment of the present utility model.According to a kind of embodiment with the electrode 100 that improves plasma uniformity of the present utility model, it comprises at least:
One reative cell 210; One microscope carrier 230; One has the electrode 100 that improves plasma uniformity; One steam vent 213; One air admission hole 214.
In the utility model embodiment, this reative cell 210 has a first surface 211 and a second surface 212 and a ground connection, and it is used in to provide makes required confined space.One microscope carrier 230 is configured on the first surface 211 of this reative cell 210, required this had the electrode 100 that improves plasma uniformity when it was used in the manufacturing of carrying in this reative cell 210 and carries out, wherein this microscope carrier 230 use insulating material so that the first surface 211 of this reaction Room 210 with make electrode insulation required when carrying out, wherein the material of this microscope carrier be selected from silicon, GaAs, pottery, glass, glass fibre, hydrocarbon pottery, iron not dragon, the not imperial glass fibre of iron and iron not imperial ceramic one of them.
In this reative cell 210, one has the electrode 100 that improves plasma uniformity is configured on this microscope carrier 230, it is used for producing a uniform electric field at this reative cell 210,211 of the first surfaces of itself and this reative cell 210 form capacity effect and produce a plasma, wherein this optimum length L with the electrode 100 that improves plasma uniformity is 1 ten two six guide wavelength, and its optimum width W is 4 percent seven guide wavelengths.Therefore when manufacturing is carried out, one makes substrate 220 will be placed on this top with the electrode 100 that improves plasma uniformity to carry out plasma reaction, wherein the material of this manufacturing substrate be selected from suspension board, silicon substrate, GaAs substrate, ceramic substrate, glass substrate, glass fibre substrate, hydrocarbon ceramic substrate, the not imperial substrate of iron, the not imperial glass fibre substrate of iron and the not imperial ceramic substrate of iron one of them.
In the utility model embodiment, a steam vent 213 is disposed on the second surface of this reative cell 210 on 212, and it is used for discharging the waste gas body that these reative cell 210 inherent manufacture processes are produced and carries out vacuum suction in this reative cell 210.One air admission hole is configured on the second surface of this reative cell, and it is used to enter the required gas of plasma generation in this reative cell, and wherein this air admission hole can enter and can be expressed as Si
xO
yC
zN
lH
mChemical compound gas, x wherein, y, z, l and m are 0 or one integer, it comprises SiH
4, Si (OC
2H
5), (CH
3)
2Si (OCH
3)
2, C
6H
6Gas.
Now please refer to Fig. 5, it shows jet-propelled capacitance coupling plasma apparatus 300 structural representations according to the 3rd embodiment of the present utility model.According to a kind of a kind of jet-propelled capacitance coupling plasma apparatus of embodiment with the electrode 100 that improves plasma uniformity of the present utility model, it comprises at least:
One reative cell 310; One microscope carrier 320; One has the electrode 100 that improves plasma uniformity; One air admission hole 350; One steam vent 313.
In the utility model embodiment, this reative cell 310 has a first surface 311 and a second surface 312 and a ground connection, and it is used to provide makes required confined space.One air admission hole 350 is disposed on the second surface 312 of this reative cell 310, and it is used to enter the required gas of plasma generation in this reative cell 310, and wherein this air admission hole 350 can enter and can be expressed as Si
xO
yC
zN
lH
mChemical compound gas, x wherein, y, z, l and m are 0 or one integer, it comprises SiH
4, Si (OC
2H
5), (CH
3)
2Si (OCH
3)
2, C
6H
6Gas.One microscope carrier 320 is configured on the first surface 311 of this reative cell 310, required electrode when its manufacturing that is used for carrying this reative cell 310 is carried out, wherein this microscope carrier 320 use insulating material so that the first surface 311 of this reaction Room 310 with make electrode insulation required when carrying out, wherein the material of this microscope carrier 320 be selected from silicon, GaAs, pottery, glass, glass fibre, hydrocarbon pottery, iron not dragon, the not imperial glass fibre of iron and iron not imperial ceramic one of them.
In the utility model embodiment, one has the electrode 100 that improves plasma uniformity is disposed on this microscope carrier 320, it is used for producing a uniform electric field at this reative cell 310, wherein this air admission hole 350 with the electrode 100 that improves plasma uniformity and this reative cell forms capacity effects and produces plasma, 311 formation of the first surface capacity effect of its and this reative cell 310.Wherein this optimum length L with the electrode 100 that improves plasma uniformity is 1 ten two six guide wavelength, and its optimum width W is 4 percent seven guide wavelengths.Therefore when manufacturing is carried out, one makes substrate 320 will be placed on this top with the electrode 100 that improves plasma uniformity to carry out plasma reaction, wherein the material of this manufacturing substrate be selected from suspension board, silicon substrate, GaAs substrate, ceramic substrate, glass substrate, glass fibre substrate, hydrocarbon ceramic substrate, the not imperial substrate of iron, the not imperial glass fibre substrate of iron and the not imperial ceramic substrate of iron one of them.
In addition, a steam vent 313 is configured on the second surface of this reative cell 210 on 312, and it is used for discharging waste gas body that these reative cell 310 inherent manufacture processes are produced and this reative cell 310 is carried out vacuum suction.
In sum, according to a kind of electrode 100 that improves plasma uniformity that has of the present utility model, it has simultaneously with following advantage: oversimplify, can make the commercialization value that large tracts of land is made substrate, had height, can be widely used in the plasma reaction manufacturing equipment.
Though the utility model discloses as above with preferred embodiment; right its is not in order to limit the utility model; the utility model also can have other various embodiments; under the situation that does not deviate from the utility model spirit and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the utility model, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the utility model.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200036018U CN201185171Y (en) | 2008-01-18 | 2008-01-18 | Electrode with improved plasma uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200036018U CN201185171Y (en) | 2008-01-18 | 2008-01-18 | Electrode with improved plasma uniformity |
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| Publication Number | Publication Date |
|---|---|
| CN201185171Y true CN201185171Y (en) | 2009-01-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200036018U Expired - Fee Related CN201185171Y (en) | 2008-01-18 | 2008-01-18 | Electrode with improved plasma uniformity |
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| Country | Link |
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| CN (1) | CN201185171Y (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101857953A (en) * | 2010-06-11 | 2010-10-13 | 深圳市创益科技发展有限公司 | Surface-fed electrodes for thin film solar cell deposition |
| CN102970812A (en) * | 2011-09-01 | 2013-03-13 | 亚树科技股份有限公司 | Method for improving plasma uniformity |
| CN104039065A (en) * | 2013-03-08 | 2014-09-10 | 英属开曼群岛商精曜有限公司 | Power introduction device and correlated plasma system thereof |
-
2008
- 2008-01-18 CN CNU2008200036018U patent/CN201185171Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101857953A (en) * | 2010-06-11 | 2010-10-13 | 深圳市创益科技发展有限公司 | Surface-fed electrodes for thin film solar cell deposition |
| CN102970812A (en) * | 2011-09-01 | 2013-03-13 | 亚树科技股份有限公司 | Method for improving plasma uniformity |
| CN104039065A (en) * | 2013-03-08 | 2014-09-10 | 英属开曼群岛商精曜有限公司 | Power introduction device and correlated plasma system thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090121 Termination date: 20100220 |