CN201126461Y - Circuit Structure of High Power Pulse Thyristor Valve for Resonance - Google Patents
Circuit Structure of High Power Pulse Thyristor Valve for Resonance Download PDFInfo
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- CN201126461Y CN201126461Y CN 200720170207 CN200720170207U CN201126461Y CN 201126461 Y CN201126461 Y CN 201126461Y CN 200720170207 CN200720170207 CN 200720170207 CN 200720170207 U CN200720170207 U CN 200720170207U CN 201126461 Y CN201126461 Y CN 201126461Y
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Abstract
一种谐振用高功率脉冲晶闸管阀电路结构,属于电力电子器件领域,包含晶闸管阀过电流试验基本电路,其特征在于,在所述过电流试验基本电路中增加了触发电路,该触发电路是在晶闸管阀闭锁时产生连续的触发脉冲,加到各个晶闸管的门极;增加了RC阻尼回路;所述高功率脉冲晶闸管阀,是由两个阀段串联组成,每个阀段为12个或16个晶闸管极串联而成。该电路结构由于采用了特殊触发控制方式及RC阻尼回路,实现了晶闸管阀的电压控制功能,高电压下晶闸管级上的电位分布均匀;使其不仅隔离和控制高电压,而且还有能通过最高达45kA的脉冲大电流,并具有灵活的多工作模式。
A high-power pulse thyristor valve circuit structure for resonance, belonging to the field of power electronic devices, including a thyristor valve overcurrent test basic circuit, characterized in that a trigger circuit is added to the overcurrent test basic circuit, and the trigger circuit is in When the thyristor valve is locked, a continuous trigger pulse is generated, which is added to the gate of each thyristor; an RC damping circuit is added; the high-power pulse thyristor valve is composed of two valve sections connected in series, and each valve section is 12 or 16 Thyristor poles are connected in series. The circuit structure realizes the voltage control function of the thyristor valve due to the adoption of a special trigger control method and RC damping circuit. Up to 45kA pulse current, and has flexible multi-working mode.
Description
技术领域technical field
本实用新型属于电力电子器件的电路领域,特别涉及到一种谐振用高功率脉冲晶闸管阀的电路结构。The utility model belongs to the circuit field of power electronic devices, in particular to a circuit structure of a high-power pulse thyristor valve for resonance.
背景技术Background technique
以大功率电力电子元器件为基础的高压串联阀,或称之为晶闸管阀,以及其附属电路,是灵活交流输电(简称FACTS)的和高压直流输电(简称HVDC)的核心部件,由于晶闸管是在硅整流元件基础上发展起来的一种新型半导体器件,其外形分有螺旋形,平板形两种,它们都有3个极,比硅整流元件多了一个电极---门极。不管外形怎样,决定它强弱的是管芯,它是由P型硅和N型硅排列成的P1N1P2N2四层结构,有3个PN结J1、J2、J3,分别从J1结的P1区引出阳极,从J2结的P2区引出控制极,从J3结的N2区引出阴极。由于其自身的脆弱性,运行可靠性还比较低,这极大地限制了FACTS和HVDC的发展,因此从电路结构的角度提高高压串联阀的运行可靠性及其在各种电力系统状态下的生存能力,已成为一个关系到FACTS和HVDC能否在电力系统中得到广泛应用的关键问题。High-voltage series valves based on high-power power electronic components, or thyristor valves, and their auxiliary circuits, are the core components of flexible AC transmission (FACTS) and high-voltage direct current transmission (HVDC). A new type of semiconductor device developed on the basis of silicon rectifier elements. Its shape can be divided into two types: spiral shape and flat plate shape. Regardless of the shape, it is the tube core that determines its strength. It is a four-layer structure of P 1 N 1 P 2 N 2 arranged by P-type silicon and N-type silicon. There are three PN junctions J 1 , J 2 , J 3 , the anode is drawn from the P1 area of the J1 junction, the control electrode is drawn from the P2 area of the J2 junction, and the cathode is drawn from the N2 area of the J3 junction. Due to its own fragility, the operation reliability is still relatively low, which greatly limits the development of FACTS and HVDC, so from the perspective of circuit structure to improve the operation reliability of high-voltage series valves and their survival in various power system states Capability has become a key issue related to whether FACTS and HVDC can be widely used in power systems.
过电流试验装置就是用来对FACTS和HVDC设备的高压晶闸阀的过电流或者故障电流进行试验的装置,它能够检验阀耐受故障电流、电压及其相关热效应能力。该装置中采用了高功率脉冲晶闸管阀特殊的电路结构,使得这种过电流试验装置与传统的试验装置有很多的不同,以往的试验电路难以使高压串联阀的运行得到可靠性的保障,难以承受高压及几十千安以上脉冲大电流的冲击。The overcurrent test device is a device used to test the overcurrent or fault current of high-voltage gate valves of FACTS and HVDC equipment. It can test the valve's ability to withstand fault current, voltage and related thermal effects. The special circuit structure of the high-power pulse thyristor valve is used in this device, which makes this overcurrent test device different from the traditional test device. The previous test circuit is difficult to guarantee the reliability of the operation of the high-voltage series valve. Withstand the impact of high voltage and high pulse current of tens of thousand amperes or more.
现有的高压阀常常用于直流输电和柔性交流输电领域,但仅能承受稳态电流,闭锁时保持高阻抗,并承受电压。而要满足闭锁不承担电压,脉冲大电流等工作条件的高压晶闸管阀,在国内外文献均未见相关报道。Existing high-voltage valves are often used in the field of direct current transmission and flexible alternating current transmission, but they can only withstand steady-state current, maintain high impedance when blocking, and withstand voltage. However, there are no relevant reports in domestic and foreign literature on high-voltage thyristor valves that meet the working conditions such as blocking voltage, high pulse current, etc.
发明内容Contents of the invention
本实用新型需要解决的技术问题是,针对已有技术中高功率脉冲晶闸管的电路结构,很难使晶闸管满足各种开关电磁暂态强度的要求,难以耐受高的故障电流、电压及相关热效应能力,为了克服这些不足之处,就需要重新设计晶闸管阀的电路结构,以提高晶闸管阀的耐受能力。本实用新型的目的,在于提供一种谐振用高功率脉冲晶闸管阀电路结构,该目的是采用以下技术方案来实现的,一种谐振用高功率脉冲晶闸管阀电路结构,包含晶闸管阀过电流试验基本电路,其特征在于,在所述过电流试验基本电路中增加了触发电路,该触发电路是在晶闸管阀闭锁时产生连续的触发脉冲加到各个晶闸管的门极;增加了RC阻尼回路;电路中采用的高功率脉冲晶闸管阀,是由两个阀段串联组成,每个阀段为12个或16个晶闸管极串联而成。The technical problem to be solved by the utility model is that, for the circuit structure of the high-power pulse thyristor in the prior art, it is difficult to make the thyristor meet the requirements of various switching electromagnetic transient strengths, and it is difficult to withstand high fault current, voltage and related thermal effect capabilities , in order to overcome these shortcomings, it is necessary to redesign the circuit structure of the thyristor valve to improve the tolerance of the thyristor valve. The purpose of this utility model is to provide a high-power pulse thyristor valve circuit structure for resonance. The circuit is characterized in that a trigger circuit is added to the basic circuit of the overcurrent test, and the trigger circuit generates continuous trigger pulses to be added to the gates of each thyristor when the thyristor valve is locked; an RC damping loop is added; in the circuit The high-power pulse thyristor valve is composed of two valve sections in series, and each valve section is composed of 12 or 16 thyristor poles connected in series.
谐振用高功率脉冲晶闸管阀的电路结构中之所以采用特殊的触发控制和触发电路,是利用在阀闭锁时产生连续的触发脉冲加到各个晶闸管的门极,促使晶闸管内部载流子浓度重新分配,并在一定程度上激发了两个等效PNP晶体管的正反馈过程,从而大大削弱了晶闸管J2结的势垒电压,因此晶闸管虽然没有电流却可以保持端电压很低。所述RC阻尼回路,是指增加了一个吸收过冲电压的保护装置Va。增加特殊设计的RC阻尼回路,是为了满足高电流变化率开通和高关断电压过冲的要求。特别增加的保护装置Va,是用来吸收谐振可能带来的过冲电压。The reason why the special trigger control and trigger circuit is used in the circuit structure of the high-power pulse thyristor valve for resonance is to use the continuous trigger pulse generated when the valve is locked to be added to the gates of each thyristor to promote the redistribution of the carrier concentration inside the thyristor. , and to a certain extent stimulate the positive feedback process of the two equivalent PNP transistors, thereby greatly weakening the barrier voltage of the thyristor J2 junction, so the thyristor can keep the terminal voltage very low although there is no current. The RC damping circuit refers to the addition of a protection device Va for absorbing overshoot voltage. A specially designed RC damping circuit is added to meet the requirements of high current change rate turn-on and high turn-off voltage overshoot. The specially added protection device Va is used to absorb the overshoot voltage that may be caused by resonance.
所述谐振用高功率脉冲晶闸管阀的机械结构,是由两个阀段串联组成,这是根据晶闸管阀的电压电流强度要求,选取合适的晶闸管元件,然后根据晶闸管的动静态特性并考虑杂散参数,优化配置晶闸管阀的阻尼吸收电路和直流均压电路,使晶闸管阀满足各种开关电磁暂态强度的要求,同时使晶闸管级上的电压分配比较均匀。The mechanical structure of the high-power pulse thyristor valve for resonance is composed of two valve sections connected in series. This is based on the voltage and current intensity requirements of the thyristor valve, selecting a suitable thyristor element, and then considering the dynamic and static characteristics of the thyristor and considering stray Parameters, optimize the configuration of the damping absorption circuit and DC voltage equalizing circuit of the thyristor valve, so that the thyristor valve can meet the requirements of various switching electromagnetic transient strengths, and at the same time make the voltage distribution on the thyristor level relatively uniform.
本实用新型的有益效果是,该电路结构由于采用了特殊触发控制方式及特殊RC阻尼回路,实现了晶闸管阀的电压控制功能,高电压下晶闸管级上的电位分布均匀;使其不仅隔离和控制高电压,而且还有能通过最高达45kA的脉冲大电流,并有灵活的多工作模式。在以前的工程应用中根本没有如此功能的高压晶闸管阀。The beneficial effect of the utility model is that the circuit structure realizes the voltage control function of the thyristor valve due to the adoption of a special trigger control mode and a special RC damping circuit, and the potential distribution on the thyristor stage under high voltage is uniform; it not only isolates and controls High voltage, but also can pass through the pulse high current up to 45kA, and has flexible multi-working mode. In previous engineering applications, there was no high-voltage thyristor valve with such functions.
该高功率脉冲晶闸管阀阀端间的工作电压最高110kV;电流45kA,频率150Hz~350Hz,谐振电流可以在任意过零点关断,之后可以根据要求选择承受电压模式或者不承受电压模式;具有灵活的多工作模式。The working voltage between the valve terminals of the high-power pulse thyristor valve is up to 110kV; the current is 45kA, the frequency is 150Hz-350Hz, and the resonant current can be turned off at any zero-crossing point, and then you can choose to withstand voltage mode or not to withstand voltage mode according to requirements; it has flexible Multiple working modes.
附图说明Description of drawings
图1a为已有晶闸管中的螺旋形外形结构图;Fig. 1a is a spiral shape structure diagram in an existing thyristor;
图1b为已有晶闸管中的平板形外形结构图;Fig. 1b is a planar outline structure diagram in an existing thyristor;
图1c为晶闸管各电极连接符号图Figure 1c is a schematic diagram of the connection symbols of each electrode of the thyristor
图1d为晶闸管内部结构示意图;Figure 1d is a schematic diagram of the internal structure of the thyristor;
图2为由两个阀段组成的脉冲晶闸管串联机械结构;Fig. 2 is the pulse thyristor series mechanical structure composed of two valve sections;
图3a为晶闸管阀过流试验装置原理图;Figure 3a is a schematic diagram of a thyristor valve overcurrent test device;
图3b为加入保护装置Va的RC阻尼电路。Figure 3b is an RC damping circuit with protection device Va added.
具体实施方式Detailed ways
参照图1a、图1b,表示已有技术中的晶闸管外形结构,图中1代表晶闸管,有两种外形,分别是螺旋线形1及平板形1′两种外形结构,参照图1c,表示晶闸管各电极连接符号图,用K表示晶闸管阴极,A表示阳极,G表示控制栅极,参照图1d,表示在晶闸管内部结构图中各分层关系,从最底部的阳极到最顶部的阴极之间,共有P1、N1、P2、N2四层结构,有3个PN结J1、J2、J3所构成。参照图2,表示由两个阀段串联的高功率脉冲晶闸管阀2的机械结构,这种阀的连接结构能使晶闸管承受较高脉冲功率。参照图3a,表示晶闸管阀过流试验装置的原理图,图中表示出触发电路3.1及RC阻尼电路3.2,参照图3b,该图表示所加入保护装置Va后的RC阻尼电路3.2,在该电路中,Va的引入,增加了吸收过冲电压的功能。Referring to Fig. 1a and Fig. 1b, it shows the shape and structure of the thyristor in the prior art. 1 in the figure represents the thyristor, and there are two kinds of shapes, which are respectively
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011072432A1 (en) * | 2009-12-14 | 2011-06-23 | 中国电力科学研究院 | Thyristor converter valve module |
CN108075749A (en) * | 2017-12-19 | 2018-05-25 | 中国工程物理研究院流体物理研究所 | High pressure photoimpact thyristor and its Triggering Control System and its trigger control method |
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2007
- 2007-08-15 CN CN 200720170207 patent/CN201126461Y/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011072432A1 (en) * | 2009-12-14 | 2011-06-23 | 中国电力科学研究院 | Thyristor converter valve module |
CN108075749A (en) * | 2017-12-19 | 2018-05-25 | 中国工程物理研究院流体物理研究所 | High pressure photoimpact thyristor and its Triggering Control System and its trigger control method |
CN108075749B (en) * | 2017-12-19 | 2024-05-07 | 中国工程物理研究院流体物理研究所 | High-voltage photo-control pulse thyristor, trigger control system and trigger control method thereof |
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