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CN200983296Y - Non equal plane spiral inductor - Google Patents

Non equal plane spiral inductor Download PDF

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Publication number
CN200983296Y
CN200983296Y CN 200620042881 CN200620042881U CN200983296Y CN 200983296 Y CN200983296 Y CN 200983296Y CN 200620042881 CN200620042881 CN 200620042881 CN 200620042881 U CN200620042881 U CN 200620042881U CN 200983296 Y CN200983296 Y CN 200983296Y
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inductor
coil
metal
spiral inductor
spiral
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石艳玲
王勇
唐深群
朱骏
陈寿面
赵宇航
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Shanghai IC R&D Center Co Ltd
East China Normal University
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Shanghai Integrated Circuit Research and Development Center Co Ltd
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Abstract

一种集成电路中的非等平面螺旋电感,所述螺旋电感中的至少一圈金属螺旋线圈与其余任一金属螺旋线圈处于不同平面,处于不同平面的线圈在不同高度的介质层上实现。本实用新型的非平面螺旋电感与传统结构平面电感相比,高频时涡流效应和邻近效应影响降低,导致串联电阻Rs下降,从而提高电感的品质因子Q值;制备工艺与常规的CMOS工艺兼容;能改善CMOS射频前端的重要功能单元的性能。

Figure 200620042881

A non-equal planar spiral inductor in an integrated circuit, at least one metal spiral coil in the spiral inductor is in a different plane from any other metal spiral coil, and the coils in different planes are realized on dielectric layers with different heights. Compared with the traditional planar inductor, the non-planar spiral inductor of the utility model has lower influence of eddy current effect and proximity effect at high frequency, resulting in a decrease of series resistance Rs, thereby improving the quality factor Q value of the inductor; the preparation process is compatible with the conventional CMOS process ; Can improve the performance of important functional units of the CMOS radio frequency front end.

Figure 200620042881

Description

非等平面螺旋电感Non-equal Plane Spiral Inductor

技术领域technical field

本实用新型属于集成电路器件制造技术领域,具体涉及一种非等平面螺旋电感的结构和制造,并适用于深亚微米/微米集成电路工艺技术。The utility model belongs to the technical field of integrated circuit device manufacturing, specifically relates to the structure and manufacture of a non-equal planar spiral inductor, and is suitable for deep submicron/micron integrated circuit technology.

背景技术Background technique

在CMOS射频集成电路(RFIC)中,螺旋电感是一种关键元件,也是电路中最难设计和掌握的元件之一,它的性能参数直接影响着射频集成电路的性能。片上电感能实现射频集成电路中电感的集成化问题,从而有助于射频集成电路的片上系统实现。In the CMOS radio frequency integrated circuit (RFIC), the spiral inductor is a key component and one of the most difficult components to design and master in the circuit. Its performance parameters directly affect the performance of the radio frequency integrated circuit. The on-chip inductor can realize the integration of the inductor in the radio frequency integrated circuit, thus contributing to the realization of the system on chip of the radio frequency integrated circuit.

片上螺旋电感大多通过金属薄膜在硅衬底上绕制而成,相对于传统的线绕电感,片上螺旋电感具有成本低、易于集成、噪声小和功耗低的优点,更重要的是能与现今的CMOS工艺兼容。近年来随着移动通信向微型化、低功耗化发展,对制作与CMOS工艺兼容的高品质片上无源器件的研究也越来越多。但是,螺旋电感中的寄生效应,如衬底的寄生电容、寄生电阻、金属导体的寄生电容、寄生电阻以及由于涡流损耗等效应而成的寄生电阻等,都将会对电感的性能产生影响。针对衬底损耗,已经提出了两大类主要的解决方法:一方面,人们使用离子注入或制作多孔硅层等方法实现选择性形成半绝缘硅衬底;另一方面,人们在电感线圈和硅衬底之间插入图形式接地屏蔽层,或在硅衬底中形成PN结隔离以减少衬底损耗。On-chip spiral inductors are mostly wound on silicon substrates by metal thin films. Compared with traditional wire-wound inductors, on-chip spiral inductors have the advantages of low cost, easy integration, low noise, and low power consumption. More importantly, they can be used with Compatible with today's CMOS processes. In recent years, with the development of mobile communication towards miniaturization and low power consumption, there are more and more researches on making high-quality on-chip passive devices compatible with CMOS technology. However, the parasitic effects in the spiral inductor, such as the parasitic capacitance and resistance of the substrate, the parasitic capacitance and resistance of the metal conductor, and the parasitic resistance due to effects such as eddy current loss, will all have an impact on the performance of the inductor. For substrate loss, two major categories of solutions have been proposed: on the one hand, people use methods such as ion implantation or making porous silicon layers to achieve selective formation of semi-insulating silicon substrates; A graphic ground shielding layer is inserted between the substrates, or a PN junction isolation is formed in the silicon substrate to reduce substrate loss.

若忽略衬底损耗,螺旋电感应主要考虑金属导体损耗,在通常情况下,人们一般使用的是平面螺旋电感,即电感所有的金属圈都在同一个平面上,结构比较简单,此时引起损耗的主要原因是金属导体的趋肤效应和邻近效应,趋肤效应在高频下不可避免,其强弱由材料和频率决定;邻近效应是由于金属线圈相互靠近电磁干扰引起电流在导体截面不均匀流动使得电阻增加,可以通过增加电感线圈距离的方法减小邻近效应从而减小损耗,提高电感的性能。增加电感线圈的距离,若将外圈的线圈往外移则增加电感的尺寸,不利于器件的微小型化;若将内圈的线圈往内移,则由于电感中央的电磁场是最强的,线圈往内部中央移,损耗会增加,不利于电感性能的提高,为此,就需要一种新型的电感结构,在不增加电感尺寸和不引起其它损耗增加的前提下,达到提高电感性能的目的。If the substrate loss is ignored, the spiral inductor mainly considers the loss of the metal conductor. Under normal circumstances, people generally use a planar spiral inductor, that is, all the metal coils of the inductor are on the same plane, and the structure is relatively simple, which causes loss at this time. The main reason is the skin effect and proximity effect of metal conductors. The skin effect is inevitable at high frequencies, and its strength is determined by the material and frequency; the proximity effect is due to the fact that the metal coils are close to each other and the electromagnetic interference causes the current to be uneven in the conductor cross-section. The flow makes the resistance increase, and the proximity effect can be reduced by increasing the distance between the inductor coils to reduce the loss and improve the performance of the inductor. Increase the distance of the inductance coil, if the outer coil is moved outward, the size of the inductance will be increased, which is not conducive to the miniaturization of the device; if the inner coil is moved inward, the electromagnetic field in the center of the inductor is the strongest, and the coil Moving to the inner center will increase the loss, which is not conducive to the improvement of inductance performance. Therefore, a new type of inductance structure is needed to achieve the purpose of improving inductance performance without increasing the size of the inductance and causing other losses.

实用新型内容Utility model content

本实用新型的目的在于提供一种集成电路中的可提高电感品质因子Q值的非等平面螺旋电感。The purpose of the utility model is to provide a non-equal planar spiral inductor in an integrated circuit that can improve the Q value of the inductance quality factor.

本实用新型是通过以下技术方案实现的:一种集成电路中的非等平面螺旋电感,所述螺旋电感中的至少一圈金属螺旋线圈与其余任一金属螺旋线圈处于不同平面,处于不同平面的线圈在不同高度的介质层上实现。The utility model is realized through the following technical solutions: a non-equal planar spiral inductor in an integrated circuit, at least one turn of the metal spiral coil in the spiral inductor is in a different plane from any other metal spiral coil, and the The coils are realized on dielectric layers of different heights.

其中,螺旋电感最内圈的线圈与其余金属螺旋线圈处于不同平面。Wherein, the innermost coil of the spiral inductor is in a different plane from the rest of the metal spiral coils.

本实用新型将螺旋电感内圈线圈往上移,即放置在不同的布线层上,这样就可以在不增加电感尺寸和不引起其它损耗增加的前提下,增加线圈间的距离,减小邻近效应从而减小损耗。与传统结构平面电感相比,本实用新型的螺旋电感高频时涡流效应和邻近效应影响降低,导致串联电阻Rs下降,从而提高电感的品质因子Q值;制备工艺与常规的CMOS工艺兼容;能改善CMOS射频前端的重要功能单元的性能。The utility model moves the inner coil of the spiral inductor upwards, that is, places it on different wiring layers, so that the distance between the coils can be increased and the proximity effect can be reduced without increasing the size of the inductor and causing other losses. Thereby reducing loss. Compared with the traditional planar inductor, the spiral inductor of the present invention reduces the influence of the eddy current effect and the proximity effect at high frequencies, resulting in a decrease in the series resistance R s , thereby improving the quality factor Q value of the inductor; the preparation process is compatible with the conventional CMOS process; It can improve the performance of important functional units of the CMOS radio frequency front end.

附图说明Description of drawings

图1A为金属导线中电流分布的剖面图。FIG. 1A is a cross-sectional view of current distribution in a metal wire.

图1B为金属导线中电流分布的俯视图。FIG. 1B is a top view of current distribution in a metal wire.

图2为螺旋电感的涡流效应图示。Figure 2 is an illustration of the eddy current effect of a spiral inductor.

图3是螺旋电感磁场的矢量分布图。Fig. 3 is a vector distribution diagram of the spiral inductor magnetic field.

图4是本实用新型所涉及方形螺旋电感的结构俯视图。Fig. 4 is a top view of the structure of the square spiral inductor involved in the present invention.

图5A是平面螺旋电感的截面图。5A is a cross-sectional view of a planar spiral inductor.

图5B是非平面螺旋电感的截面图。5B is a cross-sectional view of a non-planar spiral inductor.

其中,N是指电感的金属线圈圈数,Dout是指电感的外径,Din是指电感的内径,wn是指电感的金属导体线宽,sn是指电感的两金属导体间间距,M1是电感用作引线的金属层,M2是电感线圈的金属下层,M3是电感线圈的金属上层,Δh为两金属层间的垂直距离。Among them, N refers to the number of turns of the metal coil of the inductor, D out refers to the outer diameter of the inductor, D in refers to the inner diameter of the inductor, w n refers to the wire width of the metal conductor of the inductor, and s n refers to the distance between the two metal conductors of the inductor. The spacing, M 1 is the metal layer of the inductor used as a lead, M 2 is the metal lower layer of the inductor coil, M 3 is the metal upper layer of the inductor coil, Δh is the vertical distance between the two metal layers.

具体实施方式Detailed ways

集成电路中,射频无源器件的损耗主要由两种损耗组成:衬底损耗和金属导体损耗。本实用新型主要是针对降低金属导体损耗而提出了一种增加金属层数的优化电感结构。该结构的设计方法主要基于减小螺旋电感中金属导体的邻近效应。In integrated circuits, the loss of radio frequency passive devices is mainly composed of two kinds of losses: substrate loss and metal conductor loss. The utility model mainly aims at reducing the loss of metal conductors and proposes an optimized inductance structure with increased number of metal layers. The design method of this structure is mainly based on reducing the proximity effect of the metal conductor in the spiral inductor.

任何金属在通常条件下都是具有阻抗的。当高频信号电流流过金属导体时,同时产生欧姆损耗和涡流损耗,前者是由金属材料的非零电阻率引起,后者是由涡流电流引起。Any metal is resistive under normal conditions. When the high-frequency signal current flows through the metal conductor, ohmic loss and eddy current loss are generated at the same time. The former is caused by the non-zero resistivity of the metal material, and the latter is caused by the eddy current.

欧姆损耗与金属导体的电阻有关,而该电阻阻值与金属导体材料的电阻率和总长度成正比,与金属导体的宽度和厚度成反比。为了减少欧姆损耗,一般选用低电阻率的金属导体材料并适当增加金属层厚度,而不改变电感的几何结构。因为金属导体总长度与电感线圈圈数密切相关,而金属导体宽度与电感线圈的内、外径大小密切相关,这些都将影响电感的其它参数。Ohmic loss is related to the resistance of the metal conductor, and the resistance value is proportional to the resistivity and total length of the metal conductor material, and inversely proportional to the width and thickness of the metal conductor. In order to reduce the ohmic loss, the metal conductor material with low resistivity is generally selected and the thickness of the metal layer is appropriately increased without changing the geometric structure of the inductor. Because the total length of the metal conductor is closely related to the number of turns of the inductor coil, and the width of the metal conductor is closely related to the inner and outer diameters of the inductor coil, these will affect other parameters of the inductor.

涡流损耗与信号的频率和电感结构有关。当高频交变电流通过直导线时,电流在直导线的任一截面上的分布并不均匀,绝大部分电流沿导线表面层传输,导线的中心轴线附近基本上没有电流传输,如图1A和图1B所示,这就是所谓的趋肤效应。趋肤深度公式如下所示:Eddy current losses are related to the frequency of the signal and the inductive structure. When the high-frequency alternating current passes through the straight wire, the distribution of the current on any cross section of the straight wire is not uniform, most of the current is transmitted along the surface layer of the wire, and there is basically no current transmission near the central axis of the wire, as shown in Figure 1A As shown in Figure 1B, this is the so-called skin effect. The skin depth formula is as follows:

δ = ρ πμf 公式(1) δ = ρ πμf Formula 1)

由公式(1)可知,交流电的频率越高,趋肤深度越小,由于电感串联等效电阻Rs肤深度成反比,则Rs将越大。It can be seen from formula (1) that the higher the frequency of alternating current, the smaller the skin depth will be. Since the inductance series equivalent resistance Rs is inversely proportional to the skin depth, the greater Rs will be.

由于临近金属的电流流动,产生的交变磁场会通过该金属。根据楞次定律,该金属会产生涡流来抑制磁场的变化,该现象称为临近效应。临近效应在本质上是由于涡流引起的,与趋肤效应不同的是,趋肤效应是由通过电流的金属自身电磁场引起的,而临近效应是由临近的金属流过电流引起的,在无论有无电流流过的临近金属产生电磁场引起的涡流。涡流的产生改变了电感临近线圈的电流分布和电流密度,增大了电感的等效串联电阻。As a result of the current flowing adjacent to the metal, an alternating magnetic field is generated that passes through the metal. According to Lenz's law, the metal generates eddy currents to suppress changes in the magnetic field, a phenomenon known as the proximity effect. The proximity effect is essentially caused by eddy currents. Unlike the skin effect, the skin effect is caused by the electromagnetic field of the metal itself passing through the current, while the proximity effect is caused by the adjacent metal flowing through the current. Adjacent metals through which no current flows create eddy currents induced by electromagnetic fields. The generation of eddy current changes the current distribution and current density of the coil adjacent to the inductor, and increases the equivalent series resistance of the inductor.

当工作频率达到几GHz时,线圈间的感应耦合所引起的涡流损耗将是非常严重的,如图2所示。When the operating frequency reaches several GHz, the eddy current loss caused by the inductive coupling between the coils will be very serious, as shown in Figure 2.

图2中,从上到下表示由外到内的三条金属线,Icoil为电感线圈中流过的交流电流,由法拉第定律可知,此电流会产生一个交变磁场Bcoil,且在线圈中心处交变磁场Bcoil达到最大值,如图3的电感磁场的矢量分布图所示。此磁场越靠近线圈中心,密度越大。由法拉第电磁感应定律知,交变磁场Bcoil会在线圈内部产生涡流电流Ieddy,而此交变电流又将产生一交变磁场Beddy。由楞次定律可知,为了阻碍交变磁场Bcoil的变化,交变磁场Beddy的方向将与交变磁场Bcoin相反。而且,在线圈靠近内侧的一边,Ieddy与Icoil方向相同,总电流密度变大;在线圈靠近外侧的一边,Ieddy与Icoil方向相反,总电流密度变小,这样将导致金属导体中的电流密度更加不均匀。而且越靠近线圈中心的金属线,其电流密度越不均匀,且频率越高,这种现象越严重。In Figure 2, three metal wires from outside to inside are shown from top to bottom. I coil is the alternating current flowing through the inductance coil. According to Faraday's law, this current will generate an alternating magnetic field B coil , and at the center of the coil The alternating magnetic field B coil reaches the maximum value, as shown in the vector distribution diagram of the inductive magnetic field in FIG. 3 . The closer this magnetic field is to the center of the coil, the denser it becomes. According to Faraday's law of electromagnetic induction, the alternating magnetic field B coil will generate an eddy current I eddy inside the coil, and the alternating current will generate an alternating magnetic field Beddy . According to Lenz's law, in order to hinder the change of the alternating magnetic field B coil , the direction of the alternating magnetic field Beddy will be opposite to that of the alternating magnetic field B coin . Moreover, on the inner side of the coil, I eddy is in the same direction as I coil , and the total current density becomes larger; on the outer side of the coil, I eddy is in the opposite direction to I coil , and the total current density becomes smaller, which will lead to The current density is more uneven. And the closer the metal wire to the center of the coil, the more uneven the current density, and the higher the frequency, the more serious this phenomenon will be.

线圈越厚,感应电流Ieddy就越大,消耗的能量越多。对于时变磁场中的导线,涡流消耗的功率为The thicker the coil, the greater the induced current I eddy and the more energy it consumes. For a wire in a time-varying magnetic field, the power dissipated by eddy currents is

P e = ( πtfB ) 2 6 ρ 公式(2) P e = ( πtfB ) 2 6 ρ Formula (2)

式中:t为导线的宽度,f为工作频率,B为导体所在处的磁场,ρ为导线的电阻率,Pe为单位体积导体消耗的功率,将Pe乘以磁场相同处导线的总体积,再对整个线圈求和,即可求出线圈中涡流消耗的总能量Pa。且涡流损耗大小与工作频率的平方成正比。In the formula: t is the width of the conductor, f is the working frequency, B is the magnetic field where the conductor is located, ρ is the resistivity of the conductor, Pe is the power consumed by the conductor per unit volume, multiply Pe by the total volume of the conductor at the same magnetic field, Then summing the whole coil, the total energy Pa consumed by the eddy current in the coil can be obtained. And the eddy current loss is proportional to the square of the operating frequency.

电感金属线圈第n匝导线所在处的磁场有3个组成部分:The magnetic field where the nth turn of the wire of the inductive metal coil is located has 3 components:

              Bn=Bn,n+Bn,in+Bn,out    公式(3)B n = B n, n + B n, in + B n, out formula (3)

式中:Bn为第n匝导线所在处的总磁场,Bn,n为第n匝导线本身在此处产生的磁场,Bn,in为第n匝导线以内的各匝线圈在此处产生的磁场,Bn,out为第n匝导线以外的各匝线圈在此处产生的磁场。它们的计算式如下In the formula: B n is the total magnetic field where the nth turn of wire is located, B n, n is the magnetic field generated by the nth turn of wire itself here, B n, in is the position of each turn coil within the nth turn of wire The generated magnetic field, B n, out is the magnetic field generated here by the coils other than the nth turn of wire. They are calculated as follows

B n , n = μ 0 I 4 πd n ( 5 2 + 2 4 ) 公式(4a) B no , no = μ 0 I 4 πd no ( 5 2 + 2 4 ) Formula (4a)

BB nno ,, inin == μμ 00 II 44 ππ ΣΣ kk == 11 nno -- 11 (( -- dd kk 22 ++ (( dd nno -- dd kk )) 22 dd kk (( dd nno -- dd kk )) ++ dd kk 22 ++ (( dd nno ++ dd kk )) 22 dd kk (( dd nno ++ dd kk )) ++ 22 dd nno dd nno 22 -- dd kk 22

- ( d n - d k ) 2 + ( d n + d k ) 2 d n 2 - d k 2 ) 公式(4b) - ( d no - d k ) 2 + ( d no + d k ) 2 d no 2 - d k 2 ) Formula (4b)

BB nno ,, outout == μμ 00 II 44 ππ ΣΣ kk == nno ++ 11 NN (( dd kk 22 ++ (( dd kk -- dd nno )) 22 dd kk (( dd kk -- dd nno )) ++ dd kk 22 ++ (( dd kk ++ dd nno )) 22 dd kk (( dd kk ++ dd nno )) ++ 22 dd kk dd kk 22 -- dd nno 22

+ ( d k - d n ) 2 + ( d k + d n ) 2 d k 2 - d n 2 ) 公式(4c) + ( d k - d no ) 2 + ( d k + d no ) 2 d k 2 - d no 2 ) Formula (4c)

其中,μ0为真空磁感应系数,I为线圈中的电流,即Icoil,dn=ln/8,ln为第n匝线圈的长度,如下式所示:Among them, μ 0 is the vacuum magnetic inductance coefficient, I is the current in the coil, i.e. I coil , dn=ln/8, ln is the length of the nth coil, as shown in the following formula:

l n = l n - 1 + s n - 1 + 6 s n + s n + 1 + 7 w n - 1 + 9 w n 2 公式(5) l no = l no - 1 + the s no - 1 + 6 the s no + the s no + 1 + 7 w no - 1 + 9 w no 2 Formula (5)

另一方面,从涡流效应的分析中可知,两相邻金属导体之间的磁场将改变金属导体的电流分布,当两相邻金属导体间距越小时,它们之间的磁场相互作用越强烈,这将导致金属导体中的电流密度更加的不均匀,使得金属导体串联电阻Rs进一步变大,从而影响电感的品质因子Q值下降;另外,在电感其它参数不变的情况下,如果两金属导体的间距变大,金属导体的总长度将变大,且内径变小,这些也都将使金属导体串联电阻Rs增大,电感的品质因子Q值下降。On the other hand, from the analysis of the eddy current effect, it can be seen that the magnetic field between two adjacent metal conductors will change the current distribution of the metal conductors. When the distance between two adjacent metal conductors is smaller, the magnetic field interaction between them is stronger. It will cause the current density in the metal conductor to be more uneven, which will further increase the series resistance Rs of the metal conductor, thereby affecting the decrease of the quality factor Q value of the inductance; in addition, when other parameters of the inductance remain unchanged, if the two metal conductors The larger the spacing, the larger the total length of the metal conductor, and the smaller the inner diameter, which will also increase the series resistance Rs of the metal conductor, and the quality factor Q value of the inductance will decrease.

从上述的分析中可知,电感螺旋线圈越靠近线圈中心,其承受的磁感应损耗也越大,即最内圈的电感线圈的涡流损耗最大。且电感工作频率越高,临近效应就越严重。对此,可以通过增加一个金属层以拉大金属导体间的距离,减小邻近效应从而减小损耗,同时为避免结构过于复杂不利于流片,本实用新型是最里圈的导体与其他导体不在一个平面上,这是因为线圈最里面的磁场是最强的,这样做可以达到好的效果。From the above analysis, it can be seen that the closer the inductance helical coil is to the center of the coil, the greater the magnetic induction loss it bears, that is, the eddy current loss of the innermost inductance coil is the largest. And the higher the operating frequency of the inductor, the more serious the proximity effect. In this regard, the distance between the metal conductors can be increased by adding a metal layer to reduce the proximity effect so as to reduce the loss. At the same time, in order to avoid the structure being too complicated and not conducive to tape-out, the utility model is that the innermost circle of conductors and other conductors Not on a plane, this is because the innermost magnetic field of the coil is the strongest, and this can achieve good results.

请参阅图4,在本实用新型中,螺旋电感的金属导线线圈不在同一平面,设其结构参数分别为金属线圈圈数N、外径Dout、内径Din、金属线宽wn、两金属间间距sn。为不使结构太复杂,故考虑电感由金属层M1、M2,M3组成。金属层M1、M2分别连接信号输入和输出端,金属层M3是电感最里圈的线圈,它与其余线圈不在一个平面上,本实用新型的特征是采用了三层结构,而不是一般传统的两层结构。Please refer to Fig. 4. In this utility model, the metal wire coils of the spiral inductor are not on the same plane, and its structural parameters are respectively the number of metal coil coils N, the outer diameter D out , the inner diameter D in , the metal wire width w n , and the two metal coils. Inter-spacing s n . In order not to make the structure too complicated, it is considered that the inductor is composed of metal layers M1, M2, and M3. The metal layers M1 and M2 are respectively connected to the signal input and output ends, and the metal layer M3 is the innermost coil of the inductor, which is not on the same plane as the other coils. Two-tier structure.

请参阅图5A和图5B,对比传统平面螺旋电感的截面图和本实用新型非平面螺旋电感的截面图,本实用新型非平面螺旋电感线圈内圈的线圈与其余线圈不在一个平面上,两层之间存在垂直距离Δh,处于不同平面的线圈在不同高度的介质层上实现。Please refer to Figure 5A and Figure 5B, comparing the cross-sectional view of the traditional planar spiral inductor and the non-planar spiral inductor of the utility model, the coil of the inner coil of the non-planar spiral inductor coil of the utility model is not on the same plane as the other coils, two layers There is a vertical distance Δh between them, and coils in different planes are implemented on dielectric layers of different heights.

本实用新型的实施过程如下:根据所要求设计的电感量和外径Dout,利用软件仿真,确定电感的金属线圈圈数N,金属导体线宽wn,以及金属导体间间距sn,和两层之间的垂直距离Δh,在制造相应金属层时完成电感的制作。The implementation process of the utility model is as follows: according to the required inductance and outer diameter D out of the design, use software simulation to determine the number of metal coil coils N of the inductance, the metal conductor line width w n , and the spacing between metal conductors s n , and The vertical distance Δh between the two layers completes the manufacture of the inductor when manufacturing the corresponding metal layer.

Claims (2)

1, planar spiral inductor such as non-, it is characterized in that: at least one circle metal spiral coil in the described spiral inductance and all the other arbitrary metal spiral coils are in Different Plane, and the coil that is in Different Plane is realized on the dielectric layer of differing heights.
2, planar spiral inductor such as non-as claimed in claim 1, it is characterized in that: coil and all the other metal spiral coils of the inner ring of spiral inductance are in Different Plane.
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CN101403776A (en) * 2008-11-13 2009-04-08 华东师范大学 Method for confirming radio frequency band inductance value of plane helical inductor
CN102013558A (en) * 2010-09-14 2011-04-13 北京握奇数据系统有限公司 Antenna and device with same
CN102013556A (en) * 2010-09-14 2011-04-13 北京握奇数据系统有限公司 Antenna and device with same
CN102013557A (en) * 2010-09-14 2011-04-13 北京握奇数据系统有限公司 Antenna and device with same
CN101556860B (en) * 2008-04-10 2011-10-12 财团法人工业技术研究院 Circuit elements containing inductance and capacitance in parallel
CN101471468B (en) * 2007-12-27 2012-11-07 财团法人工业技术研究院 planar inductively coupled structure
CN102915930A (en) * 2012-09-19 2013-02-06 天津大学 Method for changing mutual inductance between radio-frequency spiral inductors and radio-frequency circuit
CN109119232A (en) * 2017-06-26 2019-01-01 瑞昱半导体股份有限公司 Asymmetric helical inductor
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CN111446928A (en) * 2019-01-16 2020-07-24 三星电机株式会社 Inductor and low noise amplifier including the same
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CN101471468B (en) * 2007-12-27 2012-11-07 财团法人工业技术研究院 planar inductively coupled structure
CN101556860B (en) * 2008-04-10 2011-10-12 财团法人工业技术研究院 Circuit elements containing inductance and capacitance in parallel
CN101403776A (en) * 2008-11-13 2009-04-08 华东师范大学 Method for confirming radio frequency band inductance value of plane helical inductor
CN102013558A (en) * 2010-09-14 2011-04-13 北京握奇数据系统有限公司 Antenna and device with same
CN102013556A (en) * 2010-09-14 2011-04-13 北京握奇数据系统有限公司 Antenna and device with same
CN102013557A (en) * 2010-09-14 2011-04-13 北京握奇数据系统有限公司 Antenna and device with same
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CN102915930B (en) * 2012-09-19 2016-08-03 天津大学 The method of the mutual inductance between change RF spiral inductor and radio circuit
CN102915930A (en) * 2012-09-19 2013-02-06 天津大学 Method for changing mutual inductance between radio-frequency spiral inductors and radio-frequency circuit
CN109119232A (en) * 2017-06-26 2019-01-01 瑞昱半导体股份有限公司 Asymmetric helical inductor
CN109119232B (en) * 2017-06-26 2020-04-28 瑞昱半导体股份有限公司 Asymmetric spiral inductor
CN109524216A (en) * 2019-01-10 2019-03-26 广西芯百特微电子有限公司 A kind of distribution wire-wound inductor device and device
CN111446928A (en) * 2019-01-16 2020-07-24 三星电机株式会社 Inductor and low noise amplifier including the same
CN111446928B (en) * 2019-01-16 2024-03-26 三星电机株式会社 Inductor and low noise amplifier including the inductor
CN113036441A (en) * 2021-03-01 2021-06-25 中国科学院半导体研究所 Ultra-wideband microwave scattering wave-transparent structure based on non-planar structure and preparation method
CN116886069A (en) * 2023-09-06 2023-10-13 合芯科技(苏州)有限公司 Semiconductor device, LC circuit and chip
CN116886069B (en) * 2023-09-06 2023-11-28 合芯科技(苏州)有限公司 Semiconductor device, LC circuit and chip

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