CN1951804A - Carbon nanotube preparation apparatus - Google Patents
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Abstract
Description
【技术领域】【Technical field】
本发明涉及一种碳纳米管的制备设备,尤其是一种热化学气相沉积的碳纳米管制备设备。The invention relates to a preparation device for carbon nanotubes, in particular to a preparation device for carbon nanotubes by thermal chemical vapor deposition.
【背景技术】【Background technique】
碳纳米管是一种新型一维奈米碳材料,由日本研究人员饭岛澄男(S.Iijima)于1991年首次发现。碳纳米管具有优异的性质,如高抗张强度与高热稳定性,并且随着碳纳米管螺旋方式的变化,碳纳米管可呈现出金属性或半导体性等。由于碳纳米管具有理想的一维结构以及在力学、电学、热学等领域优良的性质,其在材料科学、化学、物理学等交叉学科领域已展现出广阔的应用前景。因此,实现碳纳米管的可控生长,是将碳纳米管推向应用的关键。Carbon nanotubes are a new type of one-dimensional nanocarbon material, which was first discovered in 1991 by Japanese researcher Iijima Sumio (S.Iijima). Carbon nanotubes have excellent properties, such as high tensile strength and high thermal stability, and with the change of the helical mode of carbon nanotubes, carbon nanotubes can exhibit metallic or semiconducting properties. Because carbon nanotubes have an ideal one-dimensional structure and excellent properties in the fields of mechanics, electricity, and heat, they have shown broad application prospects in interdisciplinary fields such as materials science, chemistry, and physics. Therefore, realizing the controllable growth of carbon nanotubes is the key to promote the application of carbon nanotubes.
目前,较为常用的碳纳米管制备方法是化学气相沉积法。化学气相沉积法是利用含碳气体作为碳源气,在硅或沸石基底上生长出多壁或单壁碳纳米管。但是,如图1所示,现有技术中的热CVD碳纳米管制备设备1包括一石英管17,该石英管17包括一进气口13及一与该进气口13相对设置的出气口15。在碳纳米管的制备过程中,将一表面形成有催化剂层22的基底2装载在所述石英管17内,反应气体11由进气口13水平方向吹送至出气口15,即与碳纳米管的生长方向垂直。对于微细碳纳米管而言,即使该反应气体的流速缓慢,其也将使得最终生长出的碳纳米管准直性不佳。At present, the more commonly used method for preparing carbon nanotubes is chemical vapor deposition. The chemical vapor deposition method uses carbon-containing gas as a carbon source gas to grow multi-walled or single-walled carbon nanotubes on silicon or zeolite substrates. But, as shown in Figure 1, thermal CVD carbon
有鉴于此,提供一种可生长准直性碳纳米管的制备设备实为必要。In view of this, it is necessary to provide a preparation device capable of growing aligned carbon nanotubes.
【发明内容】【Content of invention】
下面将以实施例说明一种碳纳米管的制备设备,其可实现碳纳米管的准直性生长。A carbon nanotube preparation device will be described below with examples, which can realize the collimated growth of carbon nanotubes.
一种碳纳米管的制备设备,其包括一反应腔及一导流装置。该反应腔包括一第一进气口及一第一出气口。该导流装置位于该反应腔内,其包括一气体输送管、一第二进气口及一第二出气口,其中该气体输送管一端与所述第一进气口密封套接,另一端与所述第二进气口密封套接,该第二进气口的开口方向垂直于用于生长碳纳米管的基底设置,该第二出气口位于该第二进气口相对的一侧,该第二出气口与该第一出气口导通。A preparation device for carbon nanotubes, which includes a reaction chamber and a flow guiding device. The reaction chamber includes a first gas inlet and a first gas outlet. The flow guiding device is located in the reaction chamber, and it includes a gas delivery tube, a second gas inlet and a second gas outlet, wherein one end of the gas delivery tube is sealed and sleeved with the first gas inlet, and the other end is Sealed with the second air inlet, the opening direction of the second air inlet is set perpendicular to the substrate for growing carbon nanotubes, the second air outlet is located on the opposite side of the second air inlet, The second air outlet communicates with the first air outlet.
与现有技术相比较,所述碳纳米管制备设备,其通过采用导流装置改变碳纳米管生长所需的反应气体流向,使该流向由现有技术中的垂直碳纳米管生长方向转为平行于碳纳米管生长方向,该种设置可以使碳纳米管具有较佳的准直性。Compared with the prior art, the carbon nanotube preparation equipment uses a diversion device to change the flow direction of the reaction gas required for the growth of the carbon nanotubes, so that the flow direction is changed from the vertical carbon nanotube growth direction in the prior art to Parallel to the growth direction of the carbon nanotubes, this arrangement can make the carbon nanotubes have better alignment.
【附图说明】【Description of drawings】
图1是现有技术中的碳纳米管制备设备的结构示意图。Fig. 1 is a schematic structural diagram of a carbon nanotube preparation equipment in the prior art.
图2是本发明第一实施例的碳纳米管制备设备的结构示意图。Fig. 2 is a schematic structural diagram of a carbon nanotube preparation device according to the first embodiment of the present invention.
图3是本发明第二实施例的碳纳米管制备设备的结构示意图。Fig. 3 is a schematic structural diagram of a carbon nanotube preparation device according to a second embodiment of the present invention.
【具体实施方式】【Detailed ways】
下面结合附图将对本发明实施例作进一步详细的说明。The embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.
参见图2,本发明第一实施例所提供的碳纳米管制备设备10,其包括一反应腔20、一导流装置30以及一加热装置12,其中该导流装置30设置于该反应腔20内。Referring to FIG. 2, the carbon
该反应腔20包括第一进气口22及第一出气口24,该反应腔20可选用石英管。The
该导流装置30包括一气体输送管32、一第二进气口34以及一第二出气口36。本实施例中,该导流装置30除气体输送管32外的部分呈无底面的槽体结构,其材质可选用导热材料,如不锈钢。该气体输送管32一端与所述第一进气口22密封套接,另一端与第二进气口34密封套接。该气体输送管32可包括一弯折段,通过该弯折段可使第一进气口22与第二进气口34的开口方向处于垂直状态。该第二进气口34的开口方向相对于生长碳纳米管的基底40垂直设置,本实施例中该第二进气口34设置在基底40的上方部位并与基底垂直。该第二出气口36位于该第二进气口34相对一侧的导流装置30的底部,该第二出气口36的开口方向与所述第一进气口22的开口方向平行。也可以将第二出气口36设置在该第二进气口34相对一侧的导流装置30的底部,且使其开口方向与所述第一进气口22的开口方向垂直的位置,只要使该第二出气口36邻近基底40的位置均可。The
该加热装置12设置于反应腔20之周围,用于对装载于反应腔20内之奈米碳管生长用催化剂层50进行加热。该加热装置12可选用高温炉及高频炉等加热设备。The
下面结合碳纳米管的制备过程详细说明本实施例所提供的碳纳米管制备设备10的使用方法。The method of using the carbon
参见图2,先将一基底40放入反应腔20内,该基底40表面形成有一催化剂层50,设置好导流装置20使其完全包围该基底40。该基底40可选用石英、硅、氧化镁等基片。该催化剂层50可选用钴、镍、铁,或其合金材料。由于该导流装置30采用无底面的槽体结构,从而将第二出气口36设置在导流装置20底部且其开口方向与第一进气口22的开口方向平行的位置。Referring to FIG. 2 , a
然后,在常压下从第一进气口22通入载气气体,该载气气体通过气体输送管32及第二进气口34,从导流装置30的顶部进入其内并垂直吹向基底40。该载气气体可选用氢气、氮气、氨气或其它惰性气体等。通过加热装置12对反应腔20内的催化剂层50进行加热。待催化剂层50的温度升高至预定温度后,一般为500度~900度,从第一进气口22通入反应气体。所述反应气体可选用甲烷、乙烷、乙烯、乙炔等碳源气。该反应气体经气体输送管32及第二进气口34进入导流装置30内。由于催化剂的催化作用,通入到反应腔20的碳源气热分解成碳单元与氢气,碳单元吸附到催化剂层50形成的催化剂颗粒表面,待催化剂颗粒中吸附的碳单元达到饱和后将析出,从而可在催化剂颗粒位置生长出碳纳米管。而载气气体与反应后产生的废气可通过第二出气口36及与其导通的第一出气口24排出。该第二出气口36与第一出气口24可通过一导管连接,使载气气体与反应后产生的废气直接从第二出气口36到第一出气口24并排出,也可以不使用导管连接,将载气气体与反应后产生的废气直接从第二出气口36排出到反应腔20内,再通过气体的流动从第一出气口24排出。Then, under normal pressure, the carrier gas is passed from the
如图3所示,本发明第二实施例中碳纳米管制备设备100包括一加热装置120、一反应腔200及一导流装置300,其中该导流装置300可选用具有底面的箱体结构。此时,该导流装置300的气体输送管320的一端与第一进气口220密封套接,另一端与第二进气口340密封套接;该导流装置300的第二进气口340位于导流装置300的顶部,第二出气口360可设置在该导流装置300的底部且其开口方向与第一进气口220的开口方向垂直的位置,还可以将第二出气口360设置在该导流装置300的底部且其开口方向与第一进气口220的开口方向平行的位置,即相对于该第二进气口340的位置,只要使该第二出气口360邻近基底400的位置均可。As shown in Figure 3, the carbon
本发明第二实施例中,可将形成有催化剂层500的基底400直接放入导流装置300内,并将其导流装置300放入反应腔200内即可。也可附加一承载装置600,用于支撑基底400,并调整该基底400与第二进气口340之间的距离。而制备碳纳米管的其它步骤则与第一实施例相同。In the second embodiment of the present invention, the
可以理解的是,在本发明实施例中如所述第一进气口与第二进气口的开口方向之间、第一进气口与第二出气口的开口方向之间、及第一进气口的开口方向与基底之间的位置关系并不限于绝对的平行或垂直,只要能实现本发明的目的即可。It can be understood that, in the embodiment of the present invention, such as between the opening direction of the first air inlet and the second air inlet, between the opening direction of the first air inlet and the second air outlet, and the first The positional relationship between the opening direction of the air inlet and the base is not limited to being absolutely parallel or perpendicular, as long as the purpose of the present invention can be achieved.
本发明实施例所提供的碳纳米管制备设备,其通过导流装置改变碳纳米管生长用反应气体的流向,使其与碳纳米管得生长方向平行,进而可实现准直性碳纳米管的制备。The carbon nanotube preparation equipment provided by the embodiment of the present invention changes the flow direction of the reaction gas used for carbon nanotube growth through a flow guiding device so that it is parallel to the growth direction of carbon nanotubes, thereby realizing the alignment of carbon nanotubes preparation.
另外,本领域技术人员还可在本发明精神内做其它变化,如适当变化导流装置的形状及设置位置,或改变导流装置的进气口及出气口的设置位置,只要其不偏离本发明的实施效果即可。这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围的内。In addition, those skilled in the art can also make other changes within the spirit of the present invention, such as appropriately changing the shape and setting position of the flow guiding device, or changing the setting positions of the air inlet and the air outlet of the flow guiding device, as long as it does not deviate from the present invention. The implementation effect of the invention is enough. These changes made according to the spirit of the present invention should be included in the scope of the present invention.
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| CNB2005101005874A CN100482584C (en) | 2005-10-21 | 2005-10-21 | Carbon nanotube preparation apparatus |
| US11/402,468 US20070092430A1 (en) | 2005-10-21 | 2006-04-12 | Apparatus and method for manufacturing carbon nanotubes |
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| CN106276846A (en) * | 2016-07-15 | 2017-01-04 | 华北电力大学 | A kind of system and method preparing CNT |
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|---|---|---|---|---|
| CN100344532C (en) * | 2005-03-25 | 2007-10-24 | 清华大学 | Carbon nanotube array growing device |
| CN100376478C (en) * | 2005-04-22 | 2008-03-26 | 清华大学 | Preparation device of carbon nanotube array structure |
| JP6855687B2 (en) * | 2015-07-29 | 2021-04-07 | 東京エレクトロン株式会社 | Substrate processing equipment, substrate processing method, maintenance method of substrate processing equipment, and storage medium |
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| US3617371A (en) * | 1968-11-13 | 1971-11-02 | Hewlett Packard Co | Method and means for producing semiconductor material |
| US4123989A (en) * | 1977-09-12 | 1978-11-07 | Mobil Tyco Solar Energy Corp. | Manufacture of silicon on the inside of a tube |
| CN1177757C (en) * | 2001-04-06 | 2004-12-01 | 浙江大学 | A method and device for producing carbon nanotubes |
| JP4347295B2 (en) * | 2003-04-18 | 2009-10-21 | 株式会社日立国際電気 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| JP2004352599A (en) * | 2003-05-30 | 2004-12-16 | Toshio Goto | Apparatus and method for forming carbon nanotube |
| CN1223514C (en) * | 2003-06-11 | 2005-10-19 | 中国科学院上海微系统与信息技术研究所 | Flaky carbon nano tube, preparation method and special equipment |
| FR2857379A1 (en) * | 2003-07-09 | 2005-01-14 | Inanov | CATALYTIC AND DIRECTIONAL GROWTH OF INDIVIDUAL CARBON NANOTUBES, APPLICATIONS TO COLD ELECTRON SOURCES |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106276846A (en) * | 2016-07-15 | 2017-01-04 | 华北电力大学 | A kind of system and method preparing CNT |
Also Published As
| Publication number | Publication date |
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| CN100482584C (en) | 2009-04-29 |
| US20070092430A1 (en) | 2007-04-26 |
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