CN1926666A - Polishing pad and method for manufacturing semiconductor device - Google Patents
Polishing pad and method for manufacturing semiconductor device Download PDFInfo
- Publication number
- CN1926666A CN1926666A CNA2004800423072A CN200480042307A CN1926666A CN 1926666 A CN1926666 A CN 1926666A CN A2004800423072 A CNA2004800423072 A CN A2004800423072A CN 200480042307 A CN200480042307 A CN 200480042307A CN 1926666 A CN1926666 A CN 1926666A
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- China
- Prior art keywords
- transmission region
- grinding pad
- thickness
- grinding
- light transmittance
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本发明提供一种研磨垫及使用了该研磨垫的半导体器件的制造方法。即使在使用碱性料浆或酸性料浆进行研磨的情况下，也可以在从使用开始直至使用结束的长时间内持续维持高精度的光学终点检测。本发明的研磨垫被用于化学机械抛光中，具有研磨区域及透光区域，所述透光区域的浸渍于pH11的KOH水溶液或pH4的H2O2水溶液中24小时后的测定波长λ下的透光率T1 (％)与浸渍前的测定波长λ下的透光率T0 (％)的差ΔT(ΔT＝T0－T1)(％)，在测定波长400～700nm的全部范围内在10(％)以内。
The invention provides a polishing pad and a method for manufacturing a semiconductor device using the polishing pad. Even in the case of polishing with alkaline slurry or acidic slurry, high-precision optical end point detection can be continuously maintained for a long time from the start of use to the end of use. The abrasive pad of the present invention is used in chemical mechanical polishing, and has an abrasive area and a light-transmitting area, and the light-transmitting area is immersed in a KOH aqueous solution of pH 11 or an H 2 O 2 aqueous solution of pH 4 under the measurement wavelength λ after 24 hours. The difference ΔT(ΔT=T 0 -T 1 )(%) between the light transmittance T 1 (%) and the light transmittance T 0 (%) at the measurement wavelength λ before immersion, all the The range is within 10(%).
Description
Technical field
The present invention relates to a kind of grinding pad used when wafer surface concavo-convex carried out leveling with chemico-mechanical polishing (CMP), specifically, relate in the CMP that uses alkaline slip or acid slime, have the mechanism that utilizes optics detect polishing progress etc. window grinding pad and used the manufacture method of the semiconductor device of this grinding pad.
Background technology
When making semiconductor device, carry out at wafer surface formation conductive film and by carrying out the operation of formation wiring layers such as photoetching, etching; On wiring layer, form the operation of interlayer dielectric etc. because the enforcement of these operations, wafer surface can produce by electric conductor such as metal or insulator constitute concavo-convex.In recent years, though be purpose and with the densification of semiconductor integrated circuit in the miniaturization or multilayer wiredization of research and development distribution, accompany with it, the technology of the medicine for treating uneven integralization of wafer surface is also become important.
In general method as with the medicine for treating uneven integralization of wafer surface adopts the CMP method.CMP is under with the state on the abradant surface that is pressed against grinding pad by abradant surface of wafer, the technology of using the grinding agent (below be also referred to as slip) of the slip shape that has disperseed abrasive particle to grind.
General used lapping device possesses for example as shown in Figure 1 among the CMP: support grinding pad 1 grinding price fixing 2, support the brace table 5 (rubbing head) that ground object (wafer) 4, be used to carry out the lining material of the homogeneous pressurization of wafer, the feed mechanism of grinding agent.Grinding pad 1 for example grinds on the price fixing 2 by attaching to be installed in two-sided tape.Grind price fixing 2 and brace table 5 by so that the grinding pad 1 that is supported separately with ground the mode that object 4 faces mutually and disposed, possess rotating shaft 6,7 respectively.In addition, on brace table 5, be provided with and be used for and ground the pressing mechanism of object 4 to grinding pad 1 pushing.
When carrying out this kind CMP, the problem of the judgement of wafer surface flatness is arranged.That is, need detection to reach the required surface characteristic or the moment of flat state.Following in the past carrying out promptly, about the thickness of oxide-film or grinding rate etc., handled testing wafer termly, confirming behind the result wafer that becomes product to be carried out milled processed.
But, in this method, time and the cost of handling testing wafer form waste, in addition, do not implement fully because of the distinctive loading effect of CMP, to grind difference as a result in the testing wafer and product wafer of processing in advance, if in fact the product wafer is processed, then be difficult to carry out the correct anticipation of processing result.
For this reason, recently in order to eliminate described problem, wishing has when carrying out the CMP operation, can detect the method in the moment that has obtained required surface characteristic or thickness at the scene.For this kind detection, various methods have been used.
In the past, as the detection approach that is proposed, can enumerate:
(1) coefficient of friction between wafer and the pad is kept the variation of turning moment of head or price fixing as wafer and detected moment detection method (patent documentation 1)
(2) detect the static capacity method (patent documentation 2) of the thickness that residues in the dielectric film on the wafer
(3) in pack in the price fixing method of optics (patent documentation 3, patent documentation 4) of the film thickness monitor mechanism that utilizes laser of rotation
(4) to by being installed on the vibration analysis method that frequency spectrogram that vibration on head or the axle or acceleration sensor obtain is resolved
(5) be built in the interior differential pressure swing type applying detection method of head
(6) utilize the frictional heat or the slip of infrared emission thermometer instrumentation wafer and grinding pad and the method (patent documentation 5) of being ground the reaction heat of object
(7) measure by the method (patent documentation 6, patent documentation 7) of the thickness of grinding object by measuring hyperacoustic propagation time
(8) method of the sheet resistance of the metal film of instrumentation wafer surface (patent documentation 8) etc.Now, though the method for using (1) more, consider that from the aspect of measuring the spatial resolution that precision or noncontact measure the method for (3) becomes main flow gradually.
Detection method as the so-called optics of the method for (3) is following method specifically, that is, light beam is passed window (transmission region) and crosses grinding pad to wafer illumination, and the interference signal that produces because of its reflection by monitoring detects the terminal point of grinding.
Now, as light beam, in general adopt He-Ne laser or used the white light that has the Halogen lamp LED of wavelength light at 380～800nm with near the wavelength light of 600nm.
Utilize this kind method, the variation of the thickness of monitoring wafer superficial layer determines terminal point by the approximate degree of depth of learning concave-convex surface.In the moment in the variation of this kind thickness and concavo-convex deep equality, finish the CMP operation.In addition, used grinding pad in the end point determination method of the grinding of carrying out for the approach that utilizes this kind optics and this method proposed various schemes.
For example, announced the grinding pad (patent documentation 9, patent documentation 13) that has solid at least in the part and see through the transparent polymer flake of the wavelength light from 190nm to 3500nm uniformly.In addition, also announced the grinding pad (patent documentation 3) that has inserted the transparent stopper that has ladder.In addition, announced also that having with burnishing surface was the grinding pad (patent documentation 10) of the transparent stopper of same level.In addition, also announced following grinding pad (patent documentation 11, patent documentation 12), that is, the light transmission member contains water-insoluble basis material, is scattered in the water soluble particle in this water-insoluble basis material, and the light penetration of 400～800nm is more than 0.1%.All be to be used as window that end point determination uses to use and announce.
As previously mentioned, though used He-Ne laser or used white light of Halogen lamp LED etc. as light beam, yet under the situation of having used white light, following advantage is arranged, that is, various wavelength light can be got on the wafer, can be obtained the profile of more wafer surface.Under the situation that this white light is used as light beam, need improve accuracy of detection in very wide wave-length coverage.
In addition, from now on, in the highly integrated and subminaturization that semiconductor is made, the distribution width of estimating integrated circuit will be more and more littler, though will need the end point determination of high-precision optics at that time, yet the window that end point determination is in the past used does not have the accuracy of detection of the degree that can fully satisfy in very wide wave-length coverage.Particularly, even when the use of grinding pad begins, can obtain satisfiable to a certain extent accuracy of detection, yet under the situation of using alkaline abrasive grains slurry or acid abrasive grains slurry to grind, have transmission region gonorrhoea or deterioration and problem that the end point determination precision is reduced at leisure.For this reason, window in the past can't from use beginning until use when finishing over a long time continue to keep high-precision optical end point and detect.
Patent documentation 1: No. 5069002 specification of United States Patent (USP)
Patent documentation 2: No. 5081421 specification of United States Patent (USP)
Patent documentation 3: the spy opens flat 9-7985 communique
Patent documentation 4: the spy opens flat 9-36072 communique
Patent documentation 5: No. 5196353 specification of United States Patent (USP)
Patent documentation 6: the spy opens clear 55-106769 communique
Patent documentation 7: the spy opens flat 7-135190 communique
Patent documentation 8: No. 5559428 specification of United States Patent (USP)
Patent documentation 9: the flat 11-512977 communique of special table
Patent documentation 10: the spy opens flat 10-83977 communique
Patent documentation 11: the spy opens the 2002-324769 communique
Patent documentation 12: the spy opens the 2002-324770 communique
Patent documentation 13: the spy opens the 2003-48151 communique
Summary of the invention
The present invention finishes in order to solve described problem, its purpose is, even provide under the situation of using alkaline slip or acid slime to grind, also can from use beginning until use when finishing over a long time continue to keep grinding pad that high-precision optical end point detects and the manufacture method of having used the semiconductor device of this grinding pad.
The inventor furthers investigate repeatedly in view of aforesaid present situation, found that, by the transmission region that uses following transmission region to use as grinding pad, just can solve described problem.
Promptly, the present invention relates to a kind of grinding pad, used in chemico-mechanical polishing, as to have abrasive areas and transmission region grinding pad is characterized in that, the conduct of described transmission region impregnated in the light transmittance T under the mensuration wavelength X after 24 hours in the KOH aqueous solution of pH11
1(%) with the light transmittance T that floods under the preceding mensuration wavelength X
0Δ T (the Δ T=T of difference (%)
0-T
1) (%), in the four corner of measuring wavelength 400～700nm in 10 (%).
In addition, the invention still further relates to a kind of grinding pad, used in chemico-mechanical polishing, as to have abrasive areas and transmission region grinding pad is characterized in that the conduct of described transmission region impregnated in the H of pH4
2O
2Light transmittance T under the mensuration wavelength X in the aqueous solution after 24 hours
1(%) with the light transmittance T that floods under the preceding mensuration wavelength X
0Δ T (the Δ T=T of difference (%)
0-T
1) (%), in the four corner of measuring wavelength 400～700nm in 10 (%).
The decay of light intensity of transmission region of passing grinding pad is few more, then can improve the accuracy of detection of grinding endpoint or the mensuration precision of thickness more.Thus, the degree of the light transmittance under the employed mensuration light wavelength is because the accuracy of detection of decision grinding endpoint or the mensuration precision of thickness are therefore extremely important.
Because the Δ T (%) of the difference of the light transmittance before and after the conduct of transmission region of the present invention is flooded in the described KOH aqueous solution [Δ T=(the light transmittance T before the dipping
0Light transmittance T behind the)-(dipping
1)] in the four corner of measuring wavelength 400～700nm all in 10 (%), alkali resistance is good, therefore can fully tolerate the use repeatedly of alkaline slip used when grinding.Thus, just do not have the transmission region situation of gonorrhoea or deterioration at leisure, can from use beginning until use when finishing over a long time in continue to keep high-precision optical end point and detect.In preferred 9 (%) of described Δ T (%).Under the situation of Δ T (%),, therefore can't continue to keep high-precision optical end point over a long time and detect because of making the transparency of transmission region slowly reduce with contacting of alkaline slip greater than 10 (%).
In addition, another transmission region of the present invention is as poor T0 (%) [Δ T=(the light transmittance T before the dipping of the light transmittance of the front and back of the H2O2 aqueous solution that impregnated in described pH4
0Light transmittance T behind the)-(dipping
1)] in the four corner of measuring wavelength 400～700nm in 10 (%), therefore acid-proof can fully tolerate the use repeatedly of acid slime used when grinding.Thus, just do not have the transmission region situation of gonorrhoea or deterioration at leisure, can from use beginning until use when finishing over a long time in continue to keep high-precision optical end point and detect.In preferred 9 (%) of described Δ T (%), in 5 (%).Under the situation of Δ T (%),, therefore can't continue to keep high-precision optical end point over a long time and detect because of making the transparency of transmission region slowly reduce with contacting of acid slime greater than 10 (%).
And the light transmittance of the transmission region among the present invention is the value of the thickness of transmission region when being 1mm, or the value when being scaled the thickness of 1mm.In general, according to the Lambert-Beer law, light transmittance changes along with the thickness of transmission region.Because thickness is big more, then light transmittance is just low more, therefore need calculate to make thickness one light transmittance regularly.
Among the present invention, the preferred non-foaming body of the formation material of described transmission region.If, then can suppress scattering of light owing to be non-foaming body, therefore can detect correct reflectivity, can improve the accuracy of detection of the optical end point of grinding.
In addition, the side surfaces that is preferably in described transmission region does not have the sag and swell that keeps upgrading lapping liquid.When the side surfaces at transmission region has very big concave-convex surface, then will be detained the slip that contains additives such as abrasive particle at recess, cause that scattering of light absorbs, thus the tendency that has pair accuracy of detection to impact.In addition, the another side side at transmission region does not preferably have very big concave-convex surface yet.This be because, when very big concave-convex surface, then cause scattering of light easily, might impact accuracy of detection.
Among the present invention, the preferred fine foaming body of the formation material of described abrasive areas.
In addition, the side surfaces that is preferably in described abrasive areas is provided with groove.
In addition, below the preferred 70 μ m of the mean air bubble diameter of described fine foaming body, more preferably below the 50 μ m.If mean air bubble diameter is below 70 μ m, then flatness (flatness) just becomes good.
In addition, the proportion of described fine foaming body is preferred 0.5～1.0, and more preferably 0.7～0.9.When proportion less than 0.5 the time, then the intensity on the surface of abrasive areas reduces, and is ground the flatness reduction of object, in addition, when greater than 1.0 the time, though the decreased number of the micro air bubble on abrasive areas surface then, flatness is good, yet grinding rate has the tendency that diminishes.
In addition, the hardness of described fine foaming body is represented preferred 35～65 degree, more preferably 35～60 degree with ASKER D hardness.Under the situation of ASKER D hardness less than 35 degree, the flatness of being ground object reduces, and under the situation greater than 65 degree, though flatness is good, yet quilt grinds the tendency that the uniformity (homogeneity) of object has reduction.
In addition, the compression ratio of described fine foaming body is preferred 0.5～5.0%, and more preferably 0.5～3.0%.If compression ratio is in the described scope, then can realize flatness and uniformity two aspects fully.And compression ratio is a value of utilizing following formula to calculate.
Compression ratio (%)=(T1-T2)/T1} * 100
T1: fine foaming body is begun the (300g/cm with 30kPa from no load state
2) the thickness of the load of the stress fine foaming body when having kept 60 seconds.
T2: begin (1800g/cm with 180kPa from the state of T1
2) the thickness of the load of the stress fine foaming body when having kept 60 seconds.
In addition, the compressive recovery rate of described fine foaming body is preferred 50～100%, and more preferably 60～100%.Under less than 50% situation, along with load in grinding is applied on the abrasive areas repeatedly, on the thickness of abrasive areas, can embody very big variation, the stability of abrasive characteristic has the tendency of reduction.And compressive recovery rate is a value of utilizing following formula to calculate.
Compressive recovery rate (%)={ (T3-T2)/(T1-T2) } * 100
T1: fine foaming body is begun the (300g/cm with 30kPa from no load state
2) the thickness of the load of the stress fine foaming body when having kept 60 seconds.
T2: begin (1800g/cm with 180kPa from the state of T1
2) the thickness of the load of the stress fine foaming body when having kept 60 seconds.
T3: begin to keep 60 seconds from the state of T2, thereafter with 30kPa (300g/cm with no load state
2) the thickness of the load of the stress fine foaming body when having kept 60 seconds.
In addition, more than the preferred 150MPa of storage modulus of elasticity under 40 ℃ of described fine foaming body, 1Hz, more preferably more than the 250MPa.Under the situation of storage modulus of elasticity less than 150MPa, the intensity on the surface of abrasive areas reduces, and the flatness of being ground object has the tendency of reduction.And so-called storage modulus of elasticity is meant, to fine foaming body Measurement of Dynamic Viscoelasticity device, uses the tension test anchor clamps, applies sine wave oscillations and the modulus of elasticity measured.
In addition, the present invention relates to comprise the manufacture method of semiconductor device of the operation on the surface of using foregoing grinding pad grinding semiconductor chip.
Description of drawings
Fig. 1 is the summary pie graph that is illustrated in an example of the lapping device in the past that uses in the CMP grinding.
Fig. 2 is the summary section of an example of expression grinding pad of the present invention.
Fig. 3 is the summary section of another example of expression grinding pad of the present invention.
Fig. 4 is the summary section of another example of expression grinding pad of the present invention.
Fig. 5 is the summary section of another example of expression grinding pad of the present invention.
Fig. 6 is the summary pie graph of an example that expression has the CMP lapping device of end point determination device of the present invention.
Wherein, 1: grinding pad, 2: price fixing, 3: grinding agent (slip), 3: ground object (wafer), 5: ground object (wafer) brace table (rubbing head), 6,7: rotating shaft, 8: transmission region, 9: abrasive areas, 10,12: two-sided tape, 11: resilient coating, 13: processing release paper (film), 14: the parts of occlusion of openings portion, 15: laser interferometer, 16: laser beam
Embodiment
Grinding pad of the present invention has abrasive areas and transmission region at least.
The conduct of transmission region impregnated in the light transmittance T under the mensuration wavelength X after 24 hours in the KOH aqueous solution of pH11
1(%) with the light transmittance T that floods under the preceding mensuration wavelength X
0Δ T (the Δ T=T of difference (%)
0-T
1) (%), need be in 10 (%) in the four corner of measuring wavelength 400～700nm.
The conduct of other transmission region impregnated in the H of pH4
2O
2Light transmittance T under the mensuration wavelength X in the aqueous solution after 24 hours
1(%) with the light transmittance T that floods under the preceding mensuration wavelength X
0The Δ T of difference (%) need be in 10 (%) in the four corner of measuring wavelength 400～700nm.
The formation material of transmission region is so long as embody the material of described characteristic, just be not particularly limited, for example can enumerate polyurethane resin, mylar, polyamide, acrylic resin, polycarbonate resin, halogen resin (polyvinyl chloride, polytetrafluoroethylene, Kynoar etc.), polystyrene, olefine kind resin (polyethylene, polypropylene etc.) and epoxy resin etc.These resins both can use separately, also can use simultaneously more than 2 kinds.
As the H that reduces to the KOH of the pH11 aqueous solution or pH4
2O
2The approach of the variation of the light transmittance before and after the dipping in the aqueous solution can consider to improve the method for material used in the transmission region with respect to the durability of alkaline aqueous solution or acidic aqueous solution.When using the low material of durability with respect to alkaline aqueous solution or acidic aqueous solution, will begin to take place aging from material surface, make light transmittance reduce.
In addition, preferably use formation material used in the abrasive areas or with the rerum natura materials similar of abrasive areas.The high polyurethane resin of mar proof that especially preferably can suppress the light scattering of the transmission region that causes by the finishing trace in grinding.
Described polyurethane resin is the material that is made of organic isocyanate, polyalcohol (high molecular weight polyols, low molecular weight polyols) and chain elongation agent.
As organic isocyanate, can enumerate 2,4-toluene di-isocyanate(TDI), 2,6-toluene di-isocyanate(TDI), 2,2 '-methyl diphenylene diisocyanate, 2,4 '-methyl diphenylene diisocyanate, 4,4 '-methyl diphenylene diisocyanate, 1,5-naphthalene diisocyanate, p-phenylene diisocyanate, m-phenylene diisocyanate, p-eylylene diisocyanate, m-eylylene diisocyanate, hexamethylene diisocyanate, 1,4-cyclohexane diisocyanate, 4,4 '-dicyclohexyl methyl hydride diisocyanate, IPDI etc.They both can use separately, also can use simultaneously more than 2 kinds.
As organic isocyanate, except described diisocyanate cpd, can also use the above multiple functional radical polyisocyanate compounds of 3 functional groups.As the isocyanate compound of multiple functional radical, selling on the market has Desmodur-N (デ ス モ ヅ ユ one Le Beyer Co., Ltd system) or Duranate a series of vulcabond such as (デ ユ ラ ネ one industrial group of ト Asahi Chemical Industry systems) to add the adult compound.The above polyisocyanate compounds of these 3 functional groups when using separately owing to carrying out prepolymer when synthetic, gelation easily, so preferably add in the diisocyanate cpd and use.
As high molecular weight polyols, preferably be the PPG of representative with the polytetramethylene ether diol; With the own diester of polybutylene is the PEPA of representative; Polyester-polycarbonate polyalcohol with the examples such as reactant of such polyester-diol of polycaprolactone polyol, polycaprolactone and alkylene carbonic ester; Make the alcohol reaction of carbonic acid ethylidene ester and multivalence, and the polyester-polycarbonate polyalcohol that the reactant mixture that obtains thereafter and organic dicarboxylic acid are reacted; And the polycarbonate polyol that obtains of the ester exchange reaction of utilizing poly hydroxyl compound and aryl carbonates etc.Particularly, in order to improve durability, preferably use PPG, polycaprolactone polyol, polyester-polycarbonate polyalcohol etc. with respect to alkaline aqueous solution or acidic aqueous solution.Under the situation of using the short glycol adipate ester class of methene chain, preferably with the sour copolymerization of the fragrant same clan.In addition, in order to improve light transmittance, preferred use does not have the high molecular weight polyols of long resonance configuration, does not have the high molecular weight polyols of the high skeleton construction of more electron attractivity electron donability.They both can use separately, also can use simultaneously more than 2 kinds.
In addition, as polyalcohol, except described high molecular weight polyols, also can make spent glycol, 1,2-propylene glycol, 1 simultaneously, ammediol, 1,4-butanediol, 1,6-hexylene glycol, neopentyl glycol, 1,4-cyclohexanedimethanol, 3-methyl isophthalic acid, 5-pentane diol, diethylene glycol (DEG), triethylene glycol, 1, low molecular weight polyols such as two (2-hydroxyl-oxethyl) benzene of 4-.
As the chain elongation agent, can enumerate ethylene glycol, 1, the 2-propylene glycol, 1, ammediol, 1, the 4-butanediol, 1, the 6-hexylene glycol, neopentyl glycol, 1, the 4-cyclohexanedimethanol, the 3-methyl isophthalic acid, the 5-pentane diol, diethylene glycol (DEG), triethylene glycol, 1, low molecular weight polyols class such as two (2-hydroxyl-oxethyl) benzene of 4-or with 2, the 4-toluenediamine, 2, the 6-toluenediamine, 3,5-diethyl-2, the 4-toluenediamine, 4,4 '-two-sec-butyl-diaminodiphenyl-methane, 4,4 '-diaminodiphenyl-methane, 3,3 '-two chloro-4,4 '-diaminodiphenyl-methane, 2,2 ', 3,3 '-tetrachloro-4,4 '-diaminodiphenyl-methane, 4,4 '-diaminourea-3,3 '-diethyl-5,5 '-dimethyl diphenylmethane, 3,3 '-diethyl-4,4 '-diaminodiphenyl-methane, 4,4 '-methylene-two-methyl Anthranilate, 4,4 '-methylene-two-ortho-aminobenzoic acid, 4,4 '-diamino diphenyl sulfone, N, N '-two-sec-butyl-p-phenylenediamine, 4,4 '-methylene-two (3-chloro-2, the 6-diethylamide), 3,3 '-two chloro-4,4 '-diaminourea-5,5 '-diethyl diphenyl methane, 1, two (the 2-aminobenzene sulphur) ethane of 2-, the amino benzoate of trimethylene-two-p-, 3, two (the first sulphur)-2 of 5-, the polyamine class of examples such as 4-toluenediamine.They both can use a kind, also can mix more than 2 kinds.But, for the polyamine class,, perhaps use the coloring resin of their formation owing to be that self is painted often, therefore preferably cooperate with the degree of not damaging rerum natura or light transmission.In addition, when use has the compound of aromatic hydrocarbyl,, therefore especially preferably do not use this kind compound because the light transmittance of short wavelength side has the tendency of reduction.In addition, the compound that electron donability base such as halogen or sulfydryl or electron attractivity base and aromatic rings etc. combine because light transmittance has the tendency of reduction, does not therefore especially preferably use this kind compound.But, also can cooperate with the degree of not damaging the desired light transmission of short wavelength side.
The required rerum natura of the transmission region that the ratio of the organic isocyanate in the described polyurethane resin, polyalcohol and chain elongation agent can be made according to separately molecular weight or by their waits suitably and changes.In order to make transmission region obtain described characteristic, the isocyanates radix of organic isocyanate is preferred 0.95～1.15 with respect to total functional group's (hydroxyl+amino) number of polyalcohol and chain elongation agent, and more preferably 0.99～1.10.
Described polyurethane resin can be used known urethane technology such as fusion method, solwution method and make, but when having considered cost, operating environment etc., preferably utilizes the fusion method manufacturing.
As the polymerization gimmick of described polyurethane resin, though no matter utilize prepolymer method, one-step method any can, yet preferably in advance by the terminal prepolymer of organic isocyanate and polyalcohol synthesizing isocyanate, make it prepolymer method with chain elongation agent reaction.And, though there is the terminal prepolymer of the isocyanates of making by organic isocyanate and polyalcohol to sell on the market, so long as be fit to of the present inventionly, also can use them, utilize prepolymer method synthesis of polyurethane resin.
The manufacture method of transmission region is not particularly limited, and can utilize known method to make.For example, can enumerate the slicing machine that the bulk that will utilize the polyurethane resin of described method manufacturing utilizes the band saw mode or dig mode makes the method for specific thickness, resin is flowed in the mould of the cavity with specific thickness and the method that makes it to solidify, the method for having used paint-on technique or thin slice forming technique etc.And under the alveolate situation, because of scattering of light, it is big that catoptrical decay becomes in transmission region, and grinding endpoint accuracy of detection or determining film thickness precision have the tendency of reduction.So, in order to remove this kind bubble, be preferably in mix described material before, by reducing pressure below the 10Torr gas contained in the material is removed fully.In addition, in order in mixed agitating procedure, not sneak into bubble, under the situation of utilizing used usually agitator formula mixer, preferably stir with the rotating speed below the 100rpm.In addition, in agitating procedure, preferably also under reduced pressure carry out.In addition, even because rotation revolution formula mixer high speed rotating also is difficult to sneak into bubble, therefore using this mixer stirring, deaeration also is desirable method.
Though shape, the size of transmission region are not particularly limited, yet preferably be made as shape, the size identical with the peristome of abrasive areas.
Preferred 0.5～the 4mm of the thickness of transmission region, more preferably 0.6～3.5mm.Transmission region preferably is made as the thickness identical with the thickness of abrasive areas or below it.Under the transmission region situation thicker, in grinding, might cause damage to wafer by outstanding part than abrasive areas.On the other hand, under thin excessively situation, then durability becomes not enough.
In addition, near general used lapping device has excitation wavelength owing to use 500～700nm laser, so the light transmittance in this wavelength region may is preferred more than 80%.Under this situation, high reverberation be can obtain, end point determination precision or thickness accuracy of detection improved.Light transmittance in this wavelength region may is more preferably more than 90%.
As the approach that the light transmittance in the Zone Full of the wavelength 500～700nm of described transmission region is made as more than 80%, structure as described each resin, the skeleton that had better not have absorption band with respect to the light of wavelength 500～700nm preferably cooperates with the degree of not damaging desired light transmission in addition.In addition, reducing as the length to the resonance that flows of the electronics of strand direction in each resin also is an approach.This be because, in described wavelength region may, do not have very big absorption even constitute the skeleton of each monomer of resin, when because of each monomer polymerization, make conduct when the resonant structure that flows of the electronics of strand direction enlarges, the optical absorption band of resin just moves to long wavelength side easily.Thus, way such as the skeleton that cuts off resonant structure being inserted in the molecule is desirable approach.In addition, reducing that intermolecular electric charge moves also is one of approach.Thus, preferred use by the macromolecular chain that has bendability, have large volume the functional group macromolecular chain or do not contain a lot of electron attractivities or resin that the macromolecular chain of the skeleton that electron donability is high etc. constitutes.
Described transmission region is before dipping, below preferred 50 (%) of rate of change of the light transmittance among the mensuration wavelength 400～700nm that represents with following formula, more preferably below 25 (%).
Rate of change (%)={ the maximum transmission rate among (the minimum light transmittance among the maximum transmission rate-400～700nm among 400～700nm)/400～700nm } * 100
Surpass under the situation of 50 (%) at the rate of change of light transmittance, become big owing to pass the decay of light intensity of the transmission region of short wavelength side, the amplitude of interference light diminishes, so grinding endpoint accuracy of detection or determining film thickness precision have the tendency of reduction.
In addition, described transmission region is before dipping, and the light transmittance of measuring under the wavelength 400nm is preferred more than 20%, more preferably more than 50%.If the light transmittance under the wavelength 400nm more than 20%, then can use near the laser that has excitation wavelength 400～700nm, can obtain the profile of more wafer surface, therefore can further improve grinding endpoint accuracy of detection or determining film thickness precision.
In addition, described transmission region is before dipping, and the difference of measuring each light transmittance among wavelength 500～700nm is preferably in 5 (%), more preferably in 3 (%).If the difference of the light transmittance under each wavelength in 5 (%), is then carried out under the situation of beam split parsing at the thickness to wafer, owing to can on wafer, shine certain incident light, can calculate correct reflectivity, therefore can improve accuracy of detection.
In addition, the deviation of the thickness of transmission region is preferably below 100 μ m, more preferably below the 50 μ m.Because the deviation at thickness surpasses under the situation of 100 μ m, will have very big fluctuating, produces the part different with the contact condition of wafer, therefore the tendency that has pair abrasive characteristic to impact.
As the method for the deviation that suppresses thickness, can enumerate and to make the method for the sheet surface polishing of specific thickness.Different abrasive sheets such as the preferred use of polishing granularity carry out by stages.And under the situation with the transmission region polishing, surface roughness is the smaller the better.Under the big situation of surface roughness, because in the incident light generation irregular reference of transmission region surface, so light transmittance decline, accuracy of detection has the tendency of reduction.
The formation material of abrasive areas just can use so long as normally used as the material of grinding layer institute with being not particularly limited, however the preferred fine foaming body of use in the present invention.Just can in being in the bubble part on surface, keep slip by being made as fine foaming body, can increase grinding rate.
As the formation material of abrasive areas, for example can enumerate polyurethane resin, mylar, polyamide, acrylic resin, polycarbonate resin, halogen resin (polyvinyl chloride, polytetrafluoroethylene, Kynoar etc.), polystyrene, olefine kind resin (polyethylene, polypropylene etc.), epoxy resin and photoresist etc.They both can use separately, also can use simultaneously more than 2 kinds.And, though the formation material of abrasive areas and transmission region be the different compositions of same composition can, yet preferred use with transmission region in used formation material material of the same race.
Because polyurethane resin is good aspect mar proof, by being formed, raw material carries out the polymer that various changes can easily obtain to have required rerum natura, and therefore be the particularly preferred material of formation material as abrasive areas.
Described polyurethane resin is the material that is made of organic isocyanate, polyalcohol (high molecular weight polyols, low molecular weight polyols), chain elongation agent.
Used organic isocyanate is not particularly limited, and for example can enumerate organic isocyanate noted earlier.
Used high molecular weight polyols is not particularly limited, and for example can enumerate high molecular weight polyols noted earlier.And, though the number-average molecular weight of these high molecular weight polyols be not particularly limited, yet consider preferred 500～2000 from the viewpoints such as elastic characteristic of the polyurethane of gained.When number-average molecular weight less than 500 the time, then used its polyurethane just not have enough elastic characteristics, become very crisp polymer.Thus, just become really up to the mark, become the reason of the cut that causes wafer surface by the grinding pad of this polyurethane manufacturing.In addition, because therefore wearing and tearing are easily considered also undesirable from the viewpoint of pad life.On the other hand, when number-average molecular weight surpasses 2000, owing to used its polyurethane to become soft, therefore be lined with tendency in variation aspect the leveling characteristic by the grinding of this polyurethane manufacturing.
In addition, as polyalcohol, except high molecular weight polyols, also can use foregoing low molecular weight polyols simultaneously.
In addition, the high molecular weight polyols in the polyalcohol is to be determined by the desired characteristic of the abrasive areas made from them with the ratio of low molecular weight polyols.
As the chain elongation agent, can enumerate with 44 '-di-2-ethylhexylphosphine oxide (o-chloroaniline), 2,6-two chloro-p-phenylenediamines, 4, the polyamine class or the foregoing low molecular weight polyols of 4 '-di-2-ethylhexylphosphine oxide examples such as (2, the 3-dichloroaniline).They both can use a kind, also can use simultaneously more than 2 kinds.
The required rerum natura of the abrasive areas that the ratio of the organic isocyanate in the described polyurethane resin, polyalcohol and chain elongation agent can be made according to separately molecular weight or by their waits carries out various changes.In order to obtain the good abrasive areas in abrasive characteristic aspect, the isocyanic acid radix of organic isocyanate is preferred 0.95～1.15 with respect to total functional group's (hydroxyl+amino) number of polyalcohol and chain elongation agent, and more preferably 0.99～1.10.
Described polyurethane resin can utilize the method manufacturing identical with described method.And, also can in polyurethane resin, add stabilizer, surfactant, lubricant, pigment, filler, antistatic agent and other additives such as antioxidant as required.
Though the method for the fine foaming of described polyurethane resin is not particularly limited, yet for example can enumerates method that the method for utilize adding hollow bead, the foaming of machinery and the foaming of chemistry etc. make it to foam etc.And, though also can be with each method and usefulness, the foaming of the machinery of the silicone surfactant that does not have the reactive hydrogen base as the copolymer of poly-alkyl cyclohexane and polyethers especially preferably used.As this silicone surfactant, can be with SH-192 (TORAYDOWCONING SILICON system) etc. as preferred compound example.
The example that regards to the method for the polyurethane foaming body of making separated foam type used in the abrasive areas down describes.The manufacture method of this polyurethane foaming body has following operation.
1) agitating procedure of the bubble dispersion liquid of the terminal prepolymer of making isocyanates
In the terminal prepolymer of isocyanates, add the silicone surfactant, after this stir, non-reactive gas is disperseed and formation bubble dispersion liquid as micro air bubble with non-reactive gas.At the terminal prepolymer of isocyanates is under the situation of solid, to be preheated to suitable temperature at normal temperatures, fusion and using.
2) curing agent (chain elongation agent) mixed processes
In described bubble dispersion liquid, add the chain elongation agent, mix and stir.
3) curing process
With the terminal prepolymer injection molding of the isocyanates that has mixed the chain elongation agent, be heated curing.
As the non-reactive gas that uses in order to form micro air bubble, the gas of preferred non-combustible, can example go out inert gas or their mists such as nitrogen, oxygen, carbon dioxide, helium or argon gas specifically, taking cost into account most preferably use dry and removed the air of moisture.
, non-reactive gas is scattered in the agitating device in the terminal prepolymer of the isocyanates that contains the silicone surfactant as being made the micro air bubble shape, can be not particularly limited to use known agitating device, specifically, can example go out homogenizer, dissolvers, twin shaft planet strrier (planet strrier) etc.The shape of the agitator of agitating device also is not particularly limited, however when the agitator of roll shape is beaten in use, owing to can obtain micro air bubble, therefore preferred.
And, in agitating procedure, make the stirring of adding the chain elongation agent in the stirring of bubble dispersion liquid and the mixed processes and mixing, using different agitating devices also is desirable mode.Particularly, the stirring in the mixed processes also can be the stirring that does not form bubble, preferably uses the agitating device of the very big bubble of non-involvement.As this kind agitating device, preferred planet strrier.Even the agitating device for agitating procedure and mixed processes uses identical agitating device also passable, preferably adjust as required agitator stirring conditions such as rotating speed adjustment and use.
In the manufacture method of the fine foaming body of described polyurethane, react for the bubble dispersion liquid is flowed into mould to the foaming body that no longer flows heat, the back solidifies, and has the effect of the physical characteristic that improves foaming body, and is highly desirable.Can adopt the condition of putting into the heating baking oven soon and carry out back curing after flowing into the bubble dispersion liquid in the mould, under this kind condition, because heat is delivered to reacted constituent immediately, so bubble diameter can not become big yet.When curing reaction carries out under normal pressure,, therefore preferred because bubble shape is stable.
In the manufacturing of described polyurethane resin, also can use the catalyst of known promotion polyurethane reactions such as tertiary amines, organic tin.The flowing time that the kind of catalyst, addition will be considered to flow into behind the mixed processes in the mould of regulation shape is selected.
The manufacturing of described polyurethane foaming body both can be that metering ground drops into each composition and the batch processing mode that stirs in container, also can be to supply with each composition and non-reactive gas continuously to agitating device and stir in addition, send the bubble dispersion liquid and make the continuous mode of production of formed products.
The abrasive areas that becomes grinding layer is that the polyurethane foam type will be as described above made cuts to the size of regulation and makes.
Abrasive areas of the present invention preferably is provided for keeping upgrading the groove of slip in the side surfaces that contacts with wafer.Under the situation that abrasive areas is formed by fine foaming body, though have a lot of openings at lapped face, possesses the effect that keeps slip, yet for retentivity that obtains better slip and the renewal of carrying out slip effectively, also for the breakage of the wafer that prevents to cause, be preferably in side surfaces and have groove in addition by absorption with wafer.Groove is so long as keep upgrading the surface configuration of slip, just be not particularly limited, for example can enumerate XY grid groove, concentric circles groove, through hole, the hole of not running through, polygonal column, cylinder, spiral groove, off-centre operation shape groove, radial slot and shape that these grooves have been made up etc.In addition, separation, well width, groove depth etc. also are not particularly limited, and can suitably select to form.In addition, though these grooves generally are the grooves with systematicness, yet, also can in certain limit, change separation, well width, groove depth etc. for the maintenance property upgraded with slip is made as required degree.
Though the formation method of described groove is not particularly limited, yet for example can enumerate the machine cut method of the such anchor clamps of the lathe tool that uses given size, resin is flowed into the mould of the surface configuration with regulation and the method, the method that forms with the pressed sheet punching press resin of surface configuration that make it to solidify, use method that photoetching forms, use method that the printing gimmick forms and utilization to use method that the laser of carbon dioxide gas laser etc. forms etc. with regulation.
Though the thickness of abrasive areas is not particularly limited, yet be about 0.8～4mm.As the method for the abrasive areas of making described thickness, can enumerate the slicing machine that uses the band saw mode or the mode of plane and will the bulk of described fine foaming body make the method for specific thickness, the resin inflow had the mould of cavity of specific thickness and the method that makes it to solidify and used paint-on technique or the method for thin slice forming technique etc.
In addition, the deviation of the thickness of abrasive areas is preferably below 100 μ m, below the preferred especially 50 μ m.Because the deviation at thickness surpasses under the situation of 100 μ m, abrasive areas will have very big fluctuating, produces the part different with the contact condition of wafer, therefore has pair abrasive characteristic to cause dysgenic tendency.In addition, deviation for the thickness of eliminating abrasive areas, in general grinding initial stage to the surface of abrasive areas make the bonding or welding of electricity consumption the sander of diamond abrasive grain polish, yet it is elongated to have surpassed polishing time of material of described scope, and production efficiency is reduced.In addition, as the method for the deviation that suppresses thickness, will make the method for the abrasive areas surface grinding of specific thickness in addition.When polishing, preferably use different abrasive sheets such as granularity to carry out by stages.
Manufacture method with grinding pad of abrasive areas and transmission region is not particularly limited, and can consider the whole bag of tricks, will concrete example be described below.And, though in the following concrete example grinding pad that is provided with resilient coating is recorded and narrated, also can be the grinding pad that resilient coating is not set.
At first, first example is following method as shown in Figure 2, that is, will fit with two-sided tape 10 with the abrasive areas 9 of the size openings of regulation, according in its mode of aliging with the peristome of abrasive areas 9 down, fits with the resilient coating 11 of the size openings stipulated.Then, applying is stained with the two-sided tape 12 from mould paper 13 on resilient coating 11, embedding, applying transmission region 8 in the peristome of abrasive areas 9.
As second concrete example, as shown in Figure 3, be following method, that is, will fit with two-sided tape 10, at its applying resilient coating 11 down with the abrasive areas 9 of the size openings of regulation.Thereafter, according to the mode that the peristome with abrasive areas 9 aligns, the size openings to stipulate with two-sided tape 10 and resilient coating 11.Then, applying is stained with the two-sided tape 12 from mould paper 13 on resilient coating 11, embedding, applying transmission region 8 in the peristome of abrasive areas 9.
As the 3rd concrete example, as shown in Figure 4, be following method, that is, will fit with two-sided tape 10, at its applying resilient coating 11 down with the abrasive areas 9 of the size openings of regulation.Then, fitting on the opposing face of resilient coating 11 is stained with two-sided tape 12 from mould paper 13, thereafter, the mode of aliging according to peristome with abrasive areas 9, from two-sided tape 10 until from the size openings of mould paper 13 with regulation.Embedding, applying transmission region 8 in the peristome of abrasive areas 9.And under this situation, because the state that the opposition side that becomes transmission region 8 has been opened wide, dust etc. might retain, therefore the member 14 with its obstruction preferably is installed.
As the 4th concrete example, as shown in Figure 5, be following method, that is, be stained with having fitted from the resilient coating 11 of the two-sided tape 12 of mould paper 13 size openings with regulation.To fit with two-sided tape 10 with the abrasive areas 9 of the size openings of regulation then, they will be fitted according to the mode that makes the peristome alignment.After this, embedding, applying transmission region 8 in the peristome of abrasive areas 9.And under this situation, because the state that the opposition side that becomes abrasive areas has been opened wide, dust etc. might retain, therefore the member 14 with its obstruction preferably is installed.
In the manufacture method of described grinding pad, though the approach of openings such as abrasive areas or resilient coating is not particularly limited, for example can enumerate anchor clamps that punching press has cutting power and the method for opening, utilize carbon dioxide laser etc. laser method and grind method of cutting etc. with the anchor clamps of lathe tool and so on.And the size and the shape of the peristome of abrasive areas are not particularly limited.
Described resilient coating is the layer that replenishes the characteristic of abrasive areas (grinding layer).Resilient coating is for the flatness that realizes being in trade-off relation simultaneously and uniformity two aspects and essential in CMP.So-called flatness is meant that to having the flatness of the drafting department of the small concavo-convex wafer that is produced when pattern forms when grinding, so-called uniformity is meant the homogeneity of wafer integral body.Utilize the characteristic of grinding layer that flatness is improved, utilize the characteristic of resilient coating that uniformity is improved.In the grinding pad of the present invention, resilient coating preferably uses the material more more soft than grinding layer.
Though the formation material of described resilient coating is not particularly limited, yet for example can enumerate polyester non-woven fabric, rubbery resin such as macromolecule foamed resin, butadiene rubber, isoprene rubber such as fabric nonwoven cloth such as nylon nonwoven fabrics, acrylic acid nonwoven fabrics, the resin impregnation nonwoven fabrics that has flooded the polyester non-woven fabric and so on of polyurethane, polyurethane foam, polyethylene and photoresist etc.
As the approach that grinding layer used in the abrasive areas 9 and resilient coating 11 fitted, for example can enumerate abrasive areas and resilient coating method with two-sided tape clamping, punching press.
Two-sided tape is to have the material that is provided with the general formation of adhesive linkage on the two sides of base materials such as nonwoven fabrics or film.When considering to prevent slip, preferably use film for base material to soaking into of resilient coating etc.In addition, as the composition of adhesive linkage, for example can enumerate rubber-like bonding agent or acrylic-based adhesives etc.When considering the content of metal ion,, therefore preferred because the metal ion content of acrylic-based adhesives is few.In addition,, so also the composition of each adhesive linkage of two-sided tape can be made as difference, make the bonding force optimization of each layer because abrasive areas and resilient coating be also by forming different situations.
As approach, can enumerate punching press two-sided tape on resilient coating and bonding method with resilient coating 11 and two-sided tape 12 applyings.
Two-sided tape is same as described above, is to have the material that is provided with the general formation of adhesive linkage on the two sides of base materials such as nonwoven fabrics or film.When considering after grinding pad uses, from pressing plate (platen) when peeling off, if base material uses film, then because can to eliminate adhesive tape residual etc., therefore preferred.In addition, the composition of adhesive linkage is same as described above.
Described member 14 so long as the material that peristome is stopped up just be not particularly limited.But must be the material that in grinding, can peel off.
Semiconductor device is that the operation on the surface of grinding semiconductor chip through using described grinding pad is made.In general so-called semiconductor wafer is the material of stacked distribution metal and oxide-film on silicon wafer.Ginding process, the lapping device of semiconductor wafer are not particularly limited, for example can be as shown in Figure 1, use possessed the grinding price fixing 2 that supports grinding pad 1, the brace table 5 (rubbing head) of supporting semiconductor wafers 4 and be used for waiting and carry out to the lapping device of feed mechanism that wafer carries out lining material, the grinding agent 3 of the pressurization of homogeneous.Thereby grinding pad 1 for example grinds on the price fixing 2 with being fixed on by the two sides sticker.Grind price fixing 2 and dispose with the mode that semiconductor wafer 4 is faced mutually, possess rotating shaft 6,7 respectively with the grinding pad 1 that brace table 5 is supported according to making separately.In addition, in brace table 5 sides, be provided with and be used for the pressing mechanism of semiconductor wafer 4 to grinding pad 1 pushing.In grinding, when making grinding price fixing 2 and brace table 5 rotations, semiconductor wafer 4 to grinding pad 1 pushing, is ground in the slip of supplying with alkalescence.The flow of slip, grind load, grind the price fixing rotating speed and wafer rotation is not particularly limited, can suitably adjust and carry out.
The part of having given prominence on the surface of semiconductor wafer 4 is ground with regard to being removed and is flat condition like this.By carry out stamping-out, welding, plug-in unit wait make semiconductor device thereafter.Semiconductor device can be used for arithmetic processing apparatus or processor etc.
Embodiment
To describe embodiment of embodying formation of the present invention and effect particularly etc. below.And the assessment item among the embodiment etc. is measured as described below.
(mensuration of the light transmittance before the dipping)
The transmission region member of made is cut into 2cm * 6cm (thickness: size arbitrarily) and as the determination of light transmittance sample.Use spectrophotometer (Hitachi's system, U-3210 SpectroPhotometer), in measuring wavelength region may 400～700nm, measure.Use the Lamber-Beer law to be scaled the light transmittance of thickness 1mm the measurement result of these light transmittances.
(the KOH aqueous solution of pH11 or the H of pH4
2O
2Flooded the mensuration of the light transmittance after 24 hours in the aqueous solution)
The transmission region member of made is cut into the size of 2cm * 6cm (thickness: any) and obtains the determination of light transmittance sample, be impregnated in the KOH aqueous solution (50ml, 60 ℃) that is adjusted into pH11 or the H that is adjusted into pH4
2O
2In the aqueous solution (50ml, 60 ℃) 24 hours., take out sample, wipe the aqueous solution on surface, use described spectrophotometer, in measuring wavelength 400～700nm, measure thereafter.Use the Lamber-Beer law to be scaled the light transmittance of thickness 1mm the measurement result of these light transmittances.
(as the calculating of Δ T (%) of the difference of the light transmittance before and after the dipping)
According at the KOH of pH11 or the H of pH4
2O
2Flooded the light transmittance T under the mensuration wavelength X after 24 hours in the aqueous solution
1(%) with the light transmittance T that floods under the preceding mensuration wavelength X
0Difference (%) has been calculated Δ T (%).The mensuration wave-length coverage is 400～700nm, estimates as each light transmittance of measuring under wavelength X use 700,600,500 and the 400nm.
Δ T (%)=(the light transmittance T before the dipping
0Light transmittance T behind the)-(dipping
1)
(mean air bubble diameter mensuration)
To be as thin as possible to the abrasive areas that cuts out abreast about thickness 1mm with slicer measures as mean air bubble diameter and uses sample.Sample is fixed on the slide, uses image processing apparatus (Japan's textile company system, Image Analyzer V10), measure whole bubble diameters of 0.2mm * 0.2mm scope arbitrarily, calculated mean air bubble diameter.
(gravity test)
Carry out according to JIS Z8807-1976.The abrasive areas that will cut out with the rectangle (thickness: any) of 4cm * 8.5cm left standstill 16 hours in the environment of 23 ℃ ± 2 ℃ of temperature, humidity 50% ± 5% as the gravity test sample.In mensuration, use proportion instrument (Zultrius corporate system), measured proportion.
(ASKER D hardness mensuration)
Carry out according to JIS K6253-1997.The abrasive areas that will cut out with the size of 2cm * 2cm (thickness: any) is measured as hardness and is used sample, leaves standstill 16 hours in the environment of 23 ℃ ± 2 ℃ of temperature, humidity 50% ± 5%.When measuring, sample is overlapped, formed the above thickness of 6mm.Use hardness tester (macromolecule metrical instrument corporate system, ASKER D type hardness tester instrument), measured hardness.
(compression ratio and compressive recovery rate are measured)
The abrasive areas (grinding layer) that will cut out with the circle (thickness: any) of diameter 7mm is used sample as compression ratio and compressive recovery rate mensuration, leaves standstill 40 hours in the environment of 23 ℃ ± 2 ℃ of temperature, humidity 50% ± 5%.(the SEIKOINSTRUMENTS system SS6000), has been measured compression ratio and compressive recovery rate to use hot assay determination instrument TMA in mensuration.The calculating formula of compression ratio and compressive recovery rate is expressed as follows.
Compression ratio (%)=(T1-T2)/T1} * 100
T1: grinding layer is begun the (300g/cm with 30kPa from no load state
2) the load of the stress grinding layer thickness when having kept 60 seconds.
T2: begin (1800g/cm with 180kPa from the state of T1
2) the load of the stress grinding layer thickness when having kept 60 seconds.
Compressive recovery rate (%)={ (T3-T2)/(T1-T2) } * 100
T1: grinding layer is begun the (300g/cm with 30kPa from no load state
2) the load of the stress grinding layer thickness when having kept 60 seconds.
T2: begin (1800g/cm with 180kPa from the state of T1
2) the load of the stress grinding layer thickness when having kept 60 seconds.
T3: begin to keep 60 seconds from the state of T2, thereafter with 30kPa (300g/cm with no load state
2) the load of the stress grinding layer thickness when having kept 60 seconds.
(storage elastic modulus detection)
Carry out according to JIS K7198-1991.The abrasive areas that will cut out with the rectangle (thickness: any) of 3mm * 40mm, left standstill in the container that has added silica gel 4 days under 23 ℃ environmental condition as the Measurement of Dynamic Viscoelasticity sample.The correct width of each thin slice after cutting out and the instrumentation of thickness utilize micrometer to carry out.Use dynamic viscoelastic spectrometer (this making of rock is made, and existing IS skill is ground) in the mensuration, measured the storage elastic modulus E '.The condition determination of this moment is expressed as follows.
＜condition determination 〉
Measure temperature: 40 ℃
Apply distortion: 0.03%
Initial stage load: 20g
Frequency: 1Hz
(thickness detects and estimates A)
The detection of the optics of the thickness of wafer is estimated A and is utilized following method to carry out.As wafer, use the wafer of the heat oxide film of on 8 inches silicon wafer, having made 1 μ m,, at first, be provided with the preceding transmission region (thickness: 1.25mm) of described dipping thereon.Use interfere type determining film thickness device (Da mound electronics corporation system), in wavelength region may 400～700nm, carried out determining film thickness for several times.Carried out the situation of the peak and valley of the thickness result that calculated and the interference light under each wavelength and confirmed, the thickness of the transmission region before flooding has been detected estimate with following benchmark., transmission region described dipping after be set, carried out identical mensuration thereafter.In addition, the result preceding with dipping compares, to the KOH aqueous solution or H
2O
2Thickness change detected before and after the aqueous solution dipping is estimated with following benchmark.
Estimate before the dipping
Zero: the reproduced property of thickness is measured very well.
△: the reproduced property of thickness is measured well.
*: reproducibility is poor, the accuracy of detection deficiency.
Estimate before and after the dipping
Zero: the reproduced property of thickness is measured well before and after dipping.
*: reproducibility is poor before and after dipping, because of the KOH aqueous solution or H
2O
2Aqueous solution dipping makes the thickness accuracy of detection reduce.
(thickness detects and estimates B)
The detection of the optics of the thickness of wafer is estimated B and is utilized following method to carry out.As wafer, use the wafer of the heat oxide film of on 8 inches silicon wafer, having made 1 μ m,, at first, be provided with the preceding transmission region (thickness: 1.25mm) of described dipping thereon.Use utilizes the interfere type determining film thickness device of He-Ne laser, has carried out determining film thickness for several times under wavelength 633nm.Carried out the situation of the peak and valley of the thickness result that calculated and the interference light under each wavelength and confirmed, the thickness of the transmission region before flooding has been detected estimate with following benchmark., transmission region described dipping after be set, carried out identical mensuration thereafter.In addition, the result preceding with dipping compares, to the KOH aqueous solution or H
2O
2Thickness change detected before and after the aqueous solution dipping is estimated with following benchmark.
Estimate before the dipping
Zero: the reproduced property of thickness is measured well.
*: reproducibility is poor, the accuracy of detection deficiency.
Estimate before and after the dipping
Zero: the reproduced property of thickness is measured well before and after dipping.
*: reproducibility is poor before and after dipping, because of the KOH aqueous solution or H
2O
2Aqueous solution dipping makes the thickness accuracy of detection reduce.
(evaluation of abrasive characteristic)
Use SPP600S (ridge this work mechanism corporate system) as lapping device, use the grinding pad of made, carried out the evaluation of abrasive characteristic.Grinding rate is to have made the about 0.5 μ m of wafer grinding of the heat oxide film of 1 μ m on 8 inches silicon wafer, calculates according to the time of this moment.In the determining film thickness of oxide-film, used interfere type determining film thickness device (Da mound electronics corporation system).As grinding condition, in grinding, silica slip (SS12, KYABOT corporate system) is added as alkaline slip with flow 150ml/min.Be made as 350g/cm as grinding load
2, to grind the price fixing rotating speed and be made as 35rpm, wafer rotation is made as 30rpm.The evaluation of internal homogeneity is to have measured thickness in the face of the wafer that has carried out grinding as described above on 28 points, utilizes following formula to try to achieve internal homogeneity.The value of internal homogeneity is more little, and then homogeneity is good more.
Internal homogeneity (%)={ (maximum film thickness-minimum thickness)/(maximum film thickness+minimum thickness) } * 100
[making of abrasive areas]
With toluene di-isocyanate(TDI) (2,4-body/2, the mixture of 6-body=80/20) 14790 weight portions, 4,4 '-dicyclohexyl methyl hydride diisocyanate, 3930 weight portions, poly-inferior tetramethyl glycol (number-average molecular weight: 1006, molecular weight distribution: 1.7) 25150 weight portions and diethylene glycol (DEG) 2756 weight portions mix, under 80 ℃, add thermal agitation 120 minutes, and obtained the terminal prepolymer (isocyanate equivalent: 2.1meq/g) of isocyanates.In reaction vessel, hybrid filtering described prepolymer 100 weight portions and the silicone nonionic class surfactant that has filtered (TORAY DOWSILICON corporate system, SH192) 3 weight portions are adjusted into 80 ℃ with temperature.Use agitator, carried out being about the stirring of 4 minutes fierceness with the rotating speed of 900rpm in the mode of bringing bubble into.To wherein added in advance 120 ℃ of fusions, filtered 4,4 '-di-2-ethylhexylphosphine oxide (o-chloroaniline) (IHARACHEMICAL corporate system, IHARACU AMINE MT) 26 weight portions.Continued stir about 1 minute, reaction solution is flowed in the chunk of dish-type.Put into baking oven in the moment that the flowability of this reaction solution disappears, after carrying out 6 hours under 110 ℃, solidify, obtained polyurethane resin foaming body bulk.Use the slicing machine (FECKEN corporate system) of band saw type to cut into slices this polyurethane resin foaming body bulk, obtained polyurethane resin foaming body thin slice.Use sanding machine (AMITECH corporate system) that this thin slice is carried out the thickness of surface grinding to regulation then, formed the thin slice (sheet thickness: 1.27mm) of having adjusted thickness and precision.To carry out thin slice stamping-out that this polishing handles diameter (61cm), used groove processing machine (eastern nation steel machine corporate system), carry out the groove processing of the concentric circles of well width 0.25mm, separation 1.50mm, groove depth 0.40mm on the surface for regulation.On the face of the opposite side with the groove machined surface of this thin slice, use laminating machine, paste two-sided tape (ponding chemical industrial company system, Doubletack tape), thereafter, (thickness 1.27mm, 5.75mm * 19.5mm) have made the abrasive areas that is stained with two-sided tape to go out the hole that is used to embed transmission region on the assigned position of the thin slice that has carried out this groove processing.Each rerum natura of the abrasive areas of made is: mean air bubble diameter 45 μ m, proportion 0.86, ASKER D hardness 53 degree, compression ratio 1.0%, compressive recovery rate 65.0%, storage modulus of elasticity 275MPa.
＜invention A: alkali resistance 〉
[making of transmission region]
Production Example A-1
PEPA (number-average molecular weight 2400) 128 weight portions and 1 that to be made by adipic acid, hexylene glycol and ethylene glycol, 4-butanediol 30 weight portions mix, temperature adjustment to 70 ℃.In this mixed liquor, add 4 of temperature adjustment to 70 in advance ℃, 4 '-methyl diphenylene diisocyanate, 100 weight portions stirred about 1 minute.After this, it is 100 ℃ container that this mixed liquor is injected insulation, carries out 8 hours back curing under 100 ℃, has made polyurethane resin.Use the polyurethane resin of made, utilize injection moulding to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).
Production Example A-2
Except in Production Example A-1, change to PEPA (number-average molecular weight 2000) 89 weight portions of making by adipic acid, hexylene glycol and ethylene glycol and 1, beyond 4-butanediol 31 weight portions, utilize the method identical to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) with Production Example A-1.
Production Example A-3
Except in Production Example A-1, replace PEPA, use polytetramethylene glycol (number-average molecular weight 890) 75 weight portions, with 1, the addition of 4-butanediol changes to beyond 28 weight portions, utilizes the method identical with Production Example A-1 to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).
Production Example A-4
Except in Production Example A-1, replace PEPA, change to polycaprolactone polyol (number-average molecular weight 2000) 120 weight portions, and change to 1, beyond 4-butanediol 31 weight portions, utilize the method identical to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) with Production Example A-1.
Production Example A-5
In reaction vessel, add toluene di-isocyanate(TDI) (2,4-body/2, the mixture of 6-body=80/20) 14790 weight portions, 4,4 '-dicyclohexyl methyl hydride diisocyanate, 3930 weight portions, polytetramethylene glycol (number-average molecular weight: 1006, molecular weight distribution: 1.7) 25150 weight portions, diethylene glycol (DEG) 2756 weight portions, under 80 ℃, add thermal agitation 120 minutes, and obtained the terminal prepolymer (isocyanate equivalent: 2.1meq/g) of isocyanates.These prepolymer 100 weight portions of metering in the decompression jar utilize decompression (approximately 10Torr) to make gas deaeration remaining in the prepolymer.In the described prepolymer after deaeration, added in advance 120 ℃ of following fusions 4,4 '-di-2-ethylhexylphosphine oxide (o-chloroaniline), 29 weight portions use rotation revolution formula blender (SHINKI corporate system), stir about 3 minutes with rotating speed 800rpm.After this, make this mixture flow into mould, in 110 ℃ baking oven, carry out 9 hours back curing, obtained the polyurethane resin thin slice., the two sides of this polyurethane resin thin slice polished grinding, made transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) thereafter.
Production Example A-6
Except in Production Example A-1, the PEPA that replacement is made by adipic acid, hexylene glycol and ethylene glycol, change to PEPA (number-average molecular weight 2000) 120 weight portions of making by adipic acid and ethylene glycol, and change to 1, beyond 4-butanediol 31 weight portions, utilize the method identical to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) with Production Example A-1.
Production Example A-7
Except in Production Example A-5, with 4,4 '-dicyclohexyl methyl hydride diisocyanate changes to 4, beyond 4 '-vulcabond diphenyl ether, 3778 weight portions, utilizes the method identical with Production Example A-5 to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).
[making of grinding pad]
Embodiment A-1
Will by the surface carried out polishing, corona treatment polyethylene (thickness: the resilient coating of 0.8mm) making uses laminating machine to be fitted on the bonding plane of the abrasive areas that is stained with two-sided tape of front made for TORAY corporate system, TORAYPEF.Then at the buffer-layer surface two-sided tape of having fitted.Bore portion in order in abrasive areas to embed transmission region stamping-out in the middle of, with the big or small stamping-out resilient coating of 51mm * 13mm, run through hole thereafter., embed the transmission region in Production Example A-1 made, made grinding pad thereafter.Abrasive characteristic of the grinding pad of made etc. is shown in the table 1.
Embodiment A-2
Use the transmission region of making among the Production Example A-2, utilize the method identical to make grinding pad with embodiment A-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 1.
Embodiment A-3
Use the transmission region of making among the Production Example A-3, utilize the method identical to make grinding pad with embodiment A-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 1.
Embodiment A-4
Use the transmission region of making among the Production Example A-4, utilize the method identical to make grinding pad with embodiment A-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 1.
Reference example A-1
Use the transmission region of making among the Production Example A-5, utilize the method identical to make grinding pad with embodiment A-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 1.
Comparative examples A-1
Use the transmission region of making among the Production Example A-6, utilize the method identical to make grinding pad with embodiment A-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 1.
Reference example A-2
Use the transmission region of making among the Production Example A-7, utilize the method identical to make grinding pad with embodiment A-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 1.
[table 1]
| Embodiment A-1 | Embodiment A-2 | Embodiment A-3 | Embodiment A-4 | Reference example A-1 | Comparative examples A-1 | Reference example A-2 | ||
| Light transmittance (%) before the KOH aqueous solution dipping | 700nm | 94.2 | 94.1 | 93.2 | 93.4 | 93.6 | 95.1 | 40.2 |
| 600nm | 95.0 | 94.8 | 94.0 | 94.1 | 93.1 | 95.3 | 37.1 | |
| 500nm | 94.9 | 94.8 | 93.7 | 93.5 | 89.2 | 94.8 | 29.9 | |
| 400nm | 83.1 | 75.9 | 51.4 | 71.2 | 27.3 | 85.1 | 9.8 | |
| Light transmittance (%) behind the KOH aqueous solution dipping | 700nm | 86.1 | 86.5 | 85.9 | 90.1 | 89.5 | 83.5 | 37.8 |
| 600nm | 87.0 | 87 | 87.6 | 90.5 | 90.6 | 82.5 | 33.8 | |
| 500nm | 86.9 | 85.6 | 87.3 | 90.2 | 84.5 | 81.0 | 26.9 | |
| 400nm | 78.8 | 73.9 | 42.5 | 66.4 | 22.4 | 68.3 | 6.5 | |
| ΔT(％) | 700nm | 8.1 | 7.6 | 7.3 | 3.3 | 4.1 | 11.6 | 2.4 |
| 600nm | 8.0 | 7.8 | 6.4 | 3.6 | 2.5 | 12.8 | 3.3 | |
| 500nm | 8.0 | 8.7 | 6.4 | 3.3 | 4.7 | 13.8 | 3.0 | |
| 400nm | 4.3 | 2.0 | 8.9 | 4.8 | 4.9 | 16.8 | 3.3 | |
| Maximum transmission rate (%) among 400～700nm | 95.6 | 95.0 | 94.9 | 94.1 | 93.9 | 95.4 | 40.2 | |
| Minimum light transmittance (%) among 400～700nm | 83.3 | 75.8 | 49.9 | 71.2 | 27.5 | 85.1 | 9.8 | |
| The rate of change of light transmittance (%) | 12.9 | 20.0 | 47.4 | 24.3 | 70.7 | 10.8 | 75.6 | |
| Thickness detects estimates A | Before the dipping | ○ | ○ | ○ | ○ | △ | ○ | × |
| Before and after the dipping | ○ | ○ | ○ | ○ | ○ | × | ○ | |
| Thickness detects estimates B | Before the dipping | ○ | ○ | ○ | ○ | ○ | ○ | × |
| Before and after the dipping | ○ | ○ | ○ | ○ | ○ | × | ○ | |
| Grinding rate (/min) | 2300 | 2350 | 2350 | 2300 | 2300 | 2300 | 2350 | |
| Internal homogeneity (%) | 9 | 10 | 8 | 9 | 8 | 9 | 9 | |
As known from Table 1, Δ T 10% with interior situation under (embodiment A-1～A-4, reference example A-1), even use alkaline slip to grind, also can continue to keep high-precision optical end point for a long time and detect.Surpass under 10% the situation (Comparative examples A-1) at Δ T, when using alkaline slip to grind, can't continue to keep high-precision optical end point for a long time and detect.Light transmittance in the Zone Full of wavelength 500～700nm is less than (reference example A-2) under 80% the situation, thickness accuracy of detection deficiency.
＜invention B: acid resistance 〉
[making of transmission region]
Production Example B-1
PEPA (number-average molecular weight 2050) 128 weight portions and 1 that to be made by adipic acid, hexylene glycol and ethylene glycol, 4-butanediol 30 weight portions mix, temperature adjustment to 70 ℃.In this mixed liquor, add 4 of temperature adjustment to 70 in advance ℃, 4 '-methyl diphenylene diisocyanate, 100 weight portions stirred about 1 minute.After this, it is 100 ℃ container that this mixed liquor is injected insulation, carries out 8 hours back curing under 100 ℃, has made polyurethane resin.Use the polyurethane resin of made, utilize injection moulding to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).
Production Example B-2
Except in Production Example B-1, change to PEPA (number-average molecular weight 1720) 89 weight portions of making by adipic acid, hexylene glycol and ethylene glycol and 1, beyond 4-butanediol 31 weight portions, utilize the method identical to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) with Production Example B-1.
Production Example B-3
Except in Production Example B-1, replace PEPA, use polytetramethylene glycol (number-average molecular weight 890) 75 weight portions, with 1, the addition of 4-butanediol changes to beyond 28 weight portions, utilizes the method identical with Production Example B-1 to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).
Production Example B-4
Except in Production Example B-1, replace PEPA, change to polycaprolactone polyol (number-average molecular weight 2000) 120 weight portions, and change to 1, beyond 4-butanediol 31 weight portions, utilize the method identical to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) with Production Example B-1.
Production Example B-5
In reaction vessel, add toluene di-isocyanate(TDI) (2,4-body/2, the mixture of 6-body=80/20) 14790 weight portions, 4,4 '-dicyclohexyl methyl hydride diisocyanate, 3930 weight portions, polytetramethylene glycol (number-average molecular weight: 1006, molecular weight distribution: 1.7) 25150 weight portions, diethylene glycol (DEG) 2756 weight portions, under 80 ℃, add thermal agitation 120 minutes, and obtained the terminal prepolymer (isocyanate equivalent: 2.1meq/g) of isocyanates.These prepolymer 100 weight portions of metering in the decompression jar utilize decompression (approximately 10Torr) to make gas deaeration remaining in the prepolymer.In the described prepolymer after deaeration, added in advance 120 ℃ of following fusions 4,4 '-di-2-ethylhexylphosphine oxide (o-chloroaniline), 29 weight portions use rotation revolution formula blender (SHINKI corporate system), stir 3 minutes with rotating speed 800rpm.After this, make this mixture flow into mould, in 110 ℃ baking oven, carry out 9 hours back curing, obtained the polyurethane resin thin slice., the two sides of this polyurethane resin thin slice polished grinding, made transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) thereafter.
Production Example B-6
Except in Production Example B-1, the PEPA that replacement is made by adipic acid, hexylene glycol and ethylene glycol, change to PEPA (number-average molecular weight 2000) 120 weight portions of making by adipic acid and ethylene glycol, and change to 1, beyond 4-butanediol 31 weight portions, utilize the method identical to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm) with Production Example B-1.
Production Example B-7
Except in Production Example B-5, with 4,4 '-dicyclohexyl methyl hydride diisocyanate changes to 4, beyond 4 '-vulcabond diphenyl ether, 3778 weight portions, utilizes the method identical with Production Example B-5 to make transmission region (vertical 57mm, horizontal 19mm, thick 1.25mm).
[making of grinding pad]
Embodiment B-1
Will by the surface carried out polishing, corona treatment polyethylene (thickness: the resilient coating of 0.8mm) making uses laminating machine to be fitted on the bonding plane of the abrasive areas that is stained with two-sided tape of front made for TORAY corporate system, TORAYPEF.Then at the buffer-layer surface two-sided tape of having fitted.Bore portion in order in abrasive areas to embed transmission region stamping-out in the middle of, with the big or small stamping-out resilient coating of 51mm * 13mm, run through hole thereafter., embed the transmission region in Production Example B-1 made, made grinding pad thereafter.Abrasive characteristic of the grinding pad of made etc. is shown in the table 2.
Embodiment B-2
Use the transmission region of making among the Production Example B-2, utilize the method identical to make grinding pad with Embodiment B-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 2.
Embodiment B-3
Use the transmission region of making among the Production Example B-3, utilize the method identical to make grinding pad with Embodiment B-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 2.
Embodiment B-4
Use the transmission region of making among the Production Example B-4, utilize the method identical to make grinding pad with Embodiment B-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 2.
Reference example B-1
Use the transmission region of making among the Production Example B-5, utilize the method identical to make grinding pad with Embodiment B-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 2.
Comparative example B-1
Use the transmission region of making among the Production Example B-6, utilize the method identical to make grinding pad with Embodiment B-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 2.
Reference example B-2
Use the transmission region of making among the Production Example B-7, utilize the method identical to make grinding pad with Embodiment B-1.Abrasive characteristic of the grinding pad of made etc. is shown in the table 2.
[table 2]
| Embodiment B-1 | Embodiment B-2 | Embodiment B-3 | Embodiment B-4 | Reference example B-1 | Comparative example B-1 | Reference example B-2 | ||
| H 2O 2Light transmittance (%) before the aqueous solution dipping | 700nm | 94.2 | 94.1 | 93.2 | 93.4 | 93.6 | 95.1 | 40.2 |
| 600nm | 95.0 | 94.8 | 94.0 | 94.1 | 93.1 | 95.3 | 37.1 | |
| 500nm | 94.9 | 94.8 | 93.7 | 93.5 | 89.2 | 94.8 | 29.9 | |
| 400nm | 83.1 | 75.9 | 51.4 | 71.2 | 27.3 | 85.1 | 9.8 | |
| H 2O 2Light transmittance (%) behind the aqueous solution dipping | 700nm | 90.6 | 92.3 | 92.2 | 92.5 | 92.5 | 85.1 | 38.9 |
| 600nm | 91.4 | 93.0 | 92.2 | 93.1 | 92.4 | 84.5 | 36.2 | |
| 500nm | 92.4 | 93.4 | 91.9 | 92.3 | 88.1 | 82.7 | 28.9 | |
| 400nm | 80.6 | 67.9 | 42.4 | 69.4 | 23.3 | 72.0 | 6.7 | |
| ΔT(％) | 700nm | 3.6 | 1.8 | 1.0 | 0.9 | 1.1 | 10.0 | 1.3 |
| 600nm | 3.6 | 1.8 | 1.8 | 1.0 | 0.7 | 10.8 | 0.9 | |
| 500nm | 2.5 | 1.4 | 1.8 | 1.2 | 1.1 | 12.1 | 1.0 | |
| 400nm | 2.5 | 8.0 | 9.0 | 1.8 | 4.0 | 13.1 | 3.1 | |
| Maximum transmission rate (%) among 400～700nm | 95.1 | 94.8 | 94.5 | 94.1 | 93.1 | 95.4 | 40.2 | |
| Minimum light transmittance (%) among 400～700nm | 83.1 | 75.9 | 514 | 71.2 | 27.3 | 85.1 | 9.8 | |
| The rate of change of light transmittance (%) | 12.6 | 19.9 | 45.6 | 24.3 | 70.7 | 10.8 | 75.6 | |
| Thickness detects estimates A | Before the dipping | ○ | ○ | ○ | ○ | △ | ○ | × |
| Before and after the dipping | ○ | ○ | ○ | ○ | ○ | × | ○ | |
| Thickness detects estimates B | Before the dipping | ○ | ○ | ○ | ○ | ○ | ○ | × |
| Before and after the dipping | ○ | ○ | ○ | ○ | ○ | × | ○ | |
| Grinding rate (/min) | 3300 | 3250 | 3300 | 3200 | 3300 | 3300 | 3250 | |
| Internal homogeneity (%) | 10 | 8 | 9 | 9 | 8 | 9 | 10 | |
As known from Table 2, Δ T 10% with interior situation under (Embodiment B-1～B-4, reference example B-1), even use acid slime to grind, also can continue to keep high-precision optical end point for a long time and detect.Surpass under 10% the situation (comparative example B-1) at Δ T, when using acid slime to grind, can't continue to keep high-precision optical end point for a long time and detect.Light transmittance in the Zone Full of wavelength 500～700nm is less than (reference example B-2) under 80% the situation, thickness accuracy of detection deficiency.
Grinding pad of the present invention is to use when wafer surface concavo-convex carried out leveling with chemico-mechanical polishing (CMP), specifically, in the CMP that uses alkaline slip or acid slime, is for the mechanism that utilizes optics, detects polishing progress etc. and use.
Claims (7)
1. grinding pad, used in chemico-mechanical polishing, as to have abrasive areas and transmission region grinding pad is characterized in that,
Described transmission region floods the light transmittance T under the mensuration wavelength X after 24 hours in the KOH of the pH11 aqueous solution
1(%) with the light transmittance T that floods under the preceding mensuration wavelength X
0Poor Δ T (Δ T=T (%)
0-T
1) (%), in the four corner of measuring wavelength 400～700nm in 10 (%).
2. grinding pad, used in chemico-mechanical polishing, as to have abrasive areas and transmission region grinding pad is characterized in that,
Described transmission region is at the H of pH4
2O
2Light transmittance T in the aqueous solution under the mensuration wavelength X of dipping after 24 hours
1(%) with the light transmittance T that floods under the preceding mensuration wavelength X
0Poor Δ T (Δ T=T (%)
0-T
1) (%), in the four corner of measuring wavelength 400～700nm in 10 (%).
3. grinding pad according to claim 1 and 2, wherein, the formation material of described transmission region is non-foaming body.
4. according to each described grinding pad in the claim 1～3, wherein, the formation material of described abrasive areas is fine foaming body.
5. according to each described grinding pad in the claim 1～4, wherein, described transmission region does not have the sag and swell that keeps and upgrade lapping liquid in side surfaces.
6. according to each described grinding pad in the claim 1～5, wherein, described abrasive areas is provided with groove in side surfaces.
7. the manufacture method of a semiconductor device is characterized in that, comprises the operation of using each described grinding pad grinding semiconductor chip surface in the claim 1～6.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP069498/2004 | 2004-03-11 | ||
| JP2004069423A JP4849587B2 (en) | 2003-03-11 | 2004-03-11 | Polishing pad and method for manufacturing semiconductor device |
| JP2004069498A JP4890744B2 (en) | 2003-03-11 | 2004-03-11 | Polishing pad and method for manufacturing semiconductor device |
| JP069423/2004 | 2004-03-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1926666A true CN1926666A (en) | 2007-03-07 |
Family
ID=34975856
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800423072A Pending CN1926666A (en) | 2004-03-11 | 2004-10-20 | Polishing pad and method for manufacturing semiconductor device |
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| Country | Link |
|---|---|
| US (1) | US7731568B2 (en) |
| KR (1) | KR100817233B1 (en) |
| CN (1) | CN1926666A (en) |
| TW (2) | TWI450911B (en) |
| WO (1) | WO2005088690A1 (en) |
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-
2004
- 2004-10-20 US US10/598,717 patent/US7731568B2/en not_active Expired - Fee Related
- 2004-10-20 TW TW100144370A patent/TWI450911B/en not_active IP Right Cessation
- 2004-10-20 TW TW093131805A patent/TW200530378A/en not_active IP Right Cessation
- 2004-10-20 CN CNA2004800423072A patent/CN1926666A/en active Pending
- 2004-10-20 KR KR1020067019174A patent/KR100817233B1/en active IP Right Grant
- 2004-10-20 WO PCT/JP2004/015480 patent/WO2005088690A1/en active Application Filing
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8348724B2 (en) | 2007-05-16 | 2013-01-08 | Toyo Tire & Rubber Co., Ltd. | Polishing pad manufacturing method |
| CN101458445B (en) * | 2007-12-11 | 2012-04-25 | 中芯国际集成电路制造(上海)有限公司 | Device and method for detecting etching end point |
| CN104160485A (en) * | 2012-04-11 | 2014-11-19 | 东洋橡胶工业株式会社 | Laminated polishing pad and method for producing same |
| CN117086736A (en) * | 2023-10-20 | 2023-11-21 | 南通南洋照明科技有限公司 | Mirror polishing device for manufacturing LED lamp |
| CN117086736B (en) * | 2023-10-20 | 2023-12-26 | 南通南洋照明科技有限公司 | Mirror polishing device for manufacturing LED lamp |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201217415A (en) | 2012-05-01 |
| KR20060118010A (en) | 2006-11-17 |
| TW200530378A (en) | 2005-09-16 |
| KR100817233B1 (en) | 2008-03-27 |
| WO2005088690A1 (en) | 2005-09-22 |
| TWI450911B (en) | 2014-09-01 |
| US7731568B2 (en) | 2010-06-08 |
| US20070190905A1 (en) | 2007-08-16 |
| TWI361217B (en) | 2012-04-01 |
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