CN1909122A - Multiple field sheet type piezoresistor and its producing method - Google Patents
Multiple field sheet type piezoresistor and its producing method Download PDFInfo
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- CN1909122A CN1909122A CN 200610062048 CN200610062048A CN1909122A CN 1909122 A CN1909122 A CN 1909122A CN 200610062048 CN200610062048 CN 200610062048 CN 200610062048 A CN200610062048 A CN 200610062048A CN 1909122 A CN1909122 A CN 1909122A
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Abstract
The invention relates to a multi-layer voltage-sensitive resistance and relative production, wherein it has the types as internal electrode and end electrode inside the insulated layer; the internal electrode and end electrode are connected directly; and the end electrode and the base board are directly connected; and the production comprises: preparing slurry, laminating layers, slicing, discharging adhesive, sintering, surface treating the insulated slurry of base board, producing two end electrodes and electrically plating. The invention insulated treats the surface of multi-layer sheet voltage-sensitive resistance without end electrodes, without water adsorption, and it plates nickel and tin on the surface of end electrode, to improve the welding property and the welding reliability, with lower cost and batch production.
Description
Technical field
The present invention relates to piezo-resistance, especially relate to a kind of MLV and manufacture method thereof.
Background technology
Along with the fast development of electronic information, small-sized type piezoresistor is widely used, and it is made of electrode slurry, glass material or the other materials of electrode, substrate surface in piezo-resistance substrate, the substrate inside usually.In manufacture process, above-mentioned material, structure and manufacturing process thereof all directly influence the performance of product.At present, type piezoresistor surfacing non-structure standard, but indivedual MLV at the experimental stage adopt solder(ing) paste to be covered in the termination electrode surface, do not adopt electrotinning, needn't electroplate, non-termination electrode part does not have the pulp surface processing yet, and this experiment product weldability in use is relatively poor, but the cost height of solder(ing) paste is not suitable for producing in enormous quantities.
Summary of the invention
First technical problem to be solved by this invention is the defective that remedies above-mentioned prior art, proposes to exist between a kind of interior electrode and the termination electrode MLV of insulating barrier.
Second technical problem to be solved by this invention is the defective that remedies above-mentioned prior art, proposes to exist between a kind of interior electrode and the termination electrode manufacture method of the MLV of insulating barrier.
The 3rd technical problem to be solved by this invention is the defective that remedies above-mentioned prior art, proposes a kind of interior electrode and the direct-connected MLV of termination electrode;
The 4th technical problem to be solved by this invention is the defective that remedies above-mentioned prior art, proposes the manufacture method of a kind of interior electrode and the direct-connected MLV of termination electrode;
The 5th technical problem to be solved by this invention is the defective that remedies above-mentioned prior art, proposes a kind of termination electrode and the direct-connected MLV of piezo-resistance substrate.
The 6th technical problem to be solved by this invention is the defective that remedies above-mentioned prior art, proposes the manufacture method of a kind of termination electrode and the direct-connected MLV of piezo-resistance substrate
First technical problem of the present invention is solved by the following technical programs;
This MLV comprises two termination electrodes, an infrabasal plate and a upper substrate.
The characteristics of this MLV are:
Be provided with between the described upper and lower substrate by overlapping multilayer and comprise the piezo-resistance substrate that the type piezoresistor unit of interior electrode and piezo-resistance film is formed;
At upper and lower substrate surface, and be provided with insulating barrier between interior electrode and the termination electrode;
Be provided with the end-blocking electrode that is connected with a termination electrode respectively at the two ends of described piezo-resistance substrate;
The interior electrode of one end of each type piezoresistor unit is connected with the end-blocking electrode of a corresponding end, and the interior electrode of the other end of each type piezoresistor unit is connected with the end-blocking electrode of the corresponding other end.
First technical problem of the present invention is solved by following further technical scheme;
The material component and the percentage by weight thereof of described piezo-resistance film are respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000%.
The material component and the percentage by weight thereof of electrode are respectively in described:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50%.
Described insulating barrier is a kind of in glass dielectric layer, the high-molecular organic material insulating barrier,
The material component and the percentage by weight thereof of described glass dielectric layer are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10%.
Described high-molecular organic material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins.
Second technical problem of the present invention solved by the following technical programs;
There is the manufacture method of the MLV of insulating barrier in this between electrode and the termination electrode, may further comprise the steps:
(1) preparation slurry
(1) material component and the percentage by weight thereof with the piezo-resistance film is respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000% mix, ball milling, make slurry;
(2) material component and the percentage by weight thereof with interior electrode is respectively:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50% is mixed and made into slurry;
(3) with a kind of slurry of making in glass insulating material, the organic polymer insulating material,
The material component and the percentage by weight thereof of described glass insulating material are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10% is mixed and made into slurry;
Described organic polymer insulating material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins;
(2) laminated
Piezo-resistance film slurry is adopted the individual layer piezo-resistance film that comprises curtain coating, mode of printing making substrate infrabasal plate;
Both ends adopt mode of printing to make the interior electrode of setting pattern on infrabasal plate in interior electrode silver palladium slurry;
The employing of interior electrode silver palladium slurry is comprised oven dry, dries the mode drying;
There is being the interior electrode surface employing of setting pattern to comprise curtain coating, the middle individual layer piezo-resistance of mode of printing making film;
Number according to interior electrode pattern in the piezo-resistance substrate repeats electrode, middle individual layer piezo-resistance film in the above step continuation making;
At last piezo-resistance film slurry is adopted and comprise that curtain coating, mode of printing make the individual layer piezo-resistance film of substrate upper substrate on above-mentioned laminated surface;
(3) cutting
Laminated piezo-resistance substrate cut into meet product standard overall dimension, make single piezo-resistance substrate;
(4) binder removal
Piezo-resistance substrate after the cutting is placed on the organic principle of getting rid of in the binder removal stove wherein, and dump temperature is 100 ℃～500 ℃, and the binder removal time is 12 hours～36 hours;
(5) sintering
Piezo-resistance substrate behind the binder removal is placed on sinters porcelain body in the sintering furnace into, sintering temperature is 1000 ℃～1200 ℃, and sintering time is 0.5 hour～5.0 hours;
(6) make the end-blocking electrode
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make the end-blocking electrode, the silver ink firing temperature is 500 ℃～900 ℃, and the silver ink firing time is 0.16 hour～2.00 hours;
(7) substrate insulation paste surface treatment
Adopt printing or immersion or spray application mode to be coated in the porcelain body surface that sinters in the insulating material slurry, except laminated piezo-resistance substrate two-end part and the interior electrode surface;
The employing of insulating material slurry is comprised oven dry, dries the mode drying;
There is the laminated piezo-resistance substrate of insulating material slurry to be placed on dried surface and is solidified into insulating barrier in the sintering furnace in sintering/curing oven, sintering/curing temperature is 400 ℃～1000 ℃/30 ℃～300 ℃, and be 0.1 hour～4.0 hours/0.16 hour～1.50 hours sintering/curing time;
(8) make two end electrodes
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make two end electrodes, the silver ink firing temperature is 500 ℃～900 ℃, and the silver ink firing time is 0.16 hour～2.00 hours;
(9) electroplate
Two end electrodes electronickelling successively, tin with making promptly make finished product.
The 3rd technical problem of the present invention solved by the following technical programs;
This MLV comprises two termination electrodes, an infrabasal plate and a upper substrate.
The characteristics of this MLV are:
Be provided with between the described upper and lower substrate by overlapping multilayer and comprise the piezo-resistance substrate that the type piezoresistor unit of interior electrode and piezo-resistance film is formed;
Be provided with insulating barrier at upper and lower substrate surface;
The interior electrode of one end of each type piezoresistor unit directly is connected with the termination electrode of a corresponding end, and the interior electrode of the other end of each type piezoresistor unit directly is connected with the termination electrode of the corresponding other end.
The 3rd technical problem of the present invention solved by following further technical scheme;
The material component and the percentage by weight thereof of described piezo-resistance film are respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000%.
The material component and the percentage by weight thereof of electrode are respectively in described:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50%.
Described insulating barrier is a kind of in glass dielectric layer, the high-molecular organic material insulating barrier,
The material component and the percentage by weight thereof of described glass dielectric layer are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10%.
Described high-molecular organic material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins.
The 4th technical problem of the present invention solved by the following technical programs;
The manufacture method of electrode and the direct-connected MLV of termination electrode in this may further comprise the steps:
(1) preparation slurry
(1) material component and the percentage by weight thereof with the piezo-resistance film is respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000% mix, ball milling, make slurry;
(2) material component and the percentage by weight thereof with interior electrode is respectively:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50% is mixed and made into slurry;
(3) with a kind of slurry of making in glass insulating material, the organic polymer insulating material, the material component and the percentage by weight thereof of described glass insulating material are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10% is mixed and made into slurry;
Described organic polymer insulating material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins;
(2) laminated
Piezo-resistance film slurry is adopted the individual layer piezo-resistance film that comprises curtain coating, mode of printing making substrate infrabasal plate;
Adopt mode of printing on infrabasal plate, to make the interior electrode of setting pattern in interior electrode silver palladium slurry;
The employing of interior electrode silver palladium slurry is comprised oven dry, dries the mode drying;
There is being the interior electrode surface employing of setting pattern to comprise curtain coating, the middle individual layer piezo-resistance of mode of printing making film;
Number according to interior electrode pattern in the piezo-resistance substrate repeats electrode, middle individual layer piezo-resistance film in the above step continuation making;
At last piezo-resistance film slurry is adopted and comprise that curtain coating, mode of printing make the individual layer piezo-resistance film of substrate upper substrate on above-mentioned laminated surface;
(3) cutting
Laminated piezo-resistance substrate cut into meet product standard overall dimension, make single piezo-resistance substrate;
(4) binder removal
Piezo-resistance substrate after the cutting is placed on the organic principle of getting rid of in the binder removal stove wherein, and dump temperature is 100 ℃～500 ℃, and the binder removal time is 12 hours～36 hours;
(5) sintering
Piezo-resistance substrate behind the binder removal is placed on sinters porcelain body in the sintering furnace into, sintering temperature is 1000 ℃～1200 ℃, and sintering time is 0.5 hour～5.0 hours;
(6) substrate insulation paste surface treatment
Adopt printing or immersion or spray application mode to be coated in the porcelain body surface that sinters in the insulating material slurry, except laminated piezo-resistance substrate two-end part and the interior electrode surface;
The employing of insulating material slurry is comprised oven dry, dries the mode drying;
There is the laminated piezo-resistance substrate of insulating material slurry to be placed on sintering in sintering/curing oven/be solidified into insulating barrier on dried surface, sintering/curing temperature is 400 ℃～1000 ℃/30 ℃～300 ℃, and be 0.1 hour～4.0 hours/0.16 hour～1.50 hours sintering/curing time;
(7) make two end electrodes
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make two end electrodes, the silver ink firing temperature is 500 ℃～900 ℃, and the silver ink firing time is 0.16 hour～2.00 hours;
(8) electroplate
Two end electrodes electronickelling successively, tin with making promptly make finished product.
The 5th technical problem of the present invention solved by the following technical programs;
This MLV comprises two termination electrodes, an infrabasal plate and a upper substrate.
The characteristics of this MLV are:
Be provided with between the described upper and lower substrate by overlapping multilayer and comprise the piezo-resistance substrate that the type piezoresistor unit of interior electrode and piezo-resistance film is formed;
Be provided with insulating barrier at upper and lower substrate surface;
The two ends of described piezo-resistance substrate directly are connected with two termination electrodes respectively;
The interior electrode of one end of each type piezoresistor unit directly is connected with the termination electrode of a corresponding end, and the interior electrode of the other end of each type piezoresistor unit directly is connected with the termination electrode of the corresponding other end.
The 5th technical problem of the present invention solved by following further technical scheme;
The material component and the percentage by weight thereof of described piezo-resistance film are respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000%.
The material component and the percentage by weight thereof of electrode are respectively in described:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50%.
Described insulating barrier is a kind of in glass dielectric layer, the high-molecular organic material insulating barrier,
The material component and the percentage by weight thereof of described glass dielectric layer are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10%.
Described high-molecular organic material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins.
The 6th technical problem of the present invention solved by the following technical programs;
The manufacture method of this termination electrode and the direct-connected MLV of piezo-resistance substrate may further comprise the steps:
(1) preparation slurry
(1) material component and the percentage by weight thereof with the piezo-resistance film is respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000% mix, ball milling, make slurry;
(2) material component and the percentage by weight thereof with interior electrode is respectively:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50% is mixed and made into slurry;
(3) with a kind of slurry of making in glass insulating material, the organic polymer insulating material,
The material component and the percentage by weight thereof of described glass insulating material are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10% is mixed and made into slurry;
Described organic polymer insulating material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins;
(2) laminated
Piezo-resistance film slurry is adopted the individual layer piezo-resistance film that comprises curtain coating, mode of printing making substrate infrabasal plate;
Adopt mode of printing on infrabasal plate, to make the interior electrode of setting pattern in interior electrode silver palladium slurry;
The employing of interior electrode silver palladium slurry is comprised oven dry, dries the mode drying;
There is being the interior electrode surface employing of setting pattern to comprise curtain coating, the middle individual layer piezo-resistance of mode of printing making film;
Number according to interior electrode pattern in the piezo-resistance substrate repeats electrode, middle individual layer piezo-resistance film in the above step continuation making;
At last piezo-resistance film slurry is adopted and comprise that curtain coating, mode of printing make the individual layer piezo-resistance film of substrate upper substrate on above-mentioned laminated surface;
(3) cutting
Laminated piezo-resistance substrate cut into meet product standard overall dimension, make single piezo-resistance substrate;
(4) binder removal
Piezo-resistance substrate after the cutting is placed on the organic principle of getting rid of in the binder removal stove wherein, and dump temperature is 100 ℃～500 ℃, and the binder removal time is 12 hours～36 hours;
(5) sintering
Piezo-resistance substrate behind the binder removal is placed on sinters porcelain body in the sintering furnace into, sintering temperature is 1000 ℃～1200 ℃, and sintering time is 0.5 hour～5.0 hours;
(6) make two end electrodes
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make two end electrodes, the silver ink firing temperature is 500 ℃～900 ℃, and the silver ink firing time is 0.16 hour～2.00 hours;
(7) substrate insulation paste surface treatment
Adopt printing or immersion or spray application mode to be coated in the porcelain body surface that sinters in the insulating material slurry, except laminated piezo-resistance substrate two-end part and the interior electrode surface;
The employing of insulating material slurry is comprised oven dry, dries the mode drying;
There is the laminated piezo-resistance substrate of insulating material slurry to be placed on sintering in sintering/curing oven/be solidified into insulating barrier on dried surface, sintering/curing temperature is 400 ℃～1000 ℃/30 ℃～300 ℃, and be 0.1 hour～4.0 hours/0.16 hour～1.50 hours sintering/curing time;
(8) electroplate
Two end electrodes electronickelling successively, tin with making promptly make finished product.
The beneficial effect that the present invention is compared with the prior art is as follows: the present invention carries out insulation processing to the surface of MLV except that termination electrode, the insulating barrier that forms is evenly fine and close, do not absorb water, moisture-proof is strong, the performance that product is welded in behind the circuit is not subjected to such environmental effects, and after insulation processing is carried out on the surface except that termination electrode, electronickelling is carried out on surface to the termination electrode of MLV, tin is handled, weldability and welding reliability that product uses have not only been improved in circuit, but needn't adopt solder(ing) paste, can reduce cost especially suitable production in enormous quantities the in enormous quantities.
Description of drawings
Below the contrast accompanying drawing and in conjunction with embodiment the present invention will be described.
Fig. 1 is the structural representation of MLV of the present invention;
Fig. 2 is the substrate structure schematic diagram of MLV of the present invention;
Fig. 3 is embodiments of the invention 1: the piezo-resistance structural representation that has insulating barrier between interior electrode and the termination electrode;
Fig. 4 is the specific embodiment of the present invention two: the direct-connected piezo-resistance structural representation of interior electrode and termination electrode;
Fig. 5 is the specific embodiment of the present invention three: the direct-connected piezo-resistance structural representation of termination electrode and piezo-resistance substrate.
Embodiment
MLV as shown in Figure 1, 2 comprises two termination electrodes 1, an infrabasal plate 6 and a upper substrate 5.Be provided with between the upper and lower substrate 5,6 by overlapping multilayer and comprise the piezo-resistance substrate 3 that the type piezoresistor unit of interior electrode 2 and piezo-resistance film 7 is formed.On upper and lower substrate 5,6 surfaces, and be provided with insulating barrier 4 between interior electrode 2 and the termination electrode 1.
Embodiment 1: the MLV that has insulating barrier between interior electrode and the termination electrode.
The piezo-resistance that has insulating barrier between interior electrode as shown in Figure 3 and the termination electrode is made up of piezo-resistance substrate 3, end-blocking electrode 8, glass dielectric layer 4 and termination electrode 1.
Be provided with the end-blocking electrode 8 that is connected with a termination electrode 1 respectively at the two ends of piezo-resistance substrate 3, the interior electrode 2 of one end of each type piezoresistor unit is connected with the end-blocking electrode 8 of a corresponding end, and the interior electrode 2 of the other end of each type piezoresistor unit is connected with the end-blocking electrode 8 of the corresponding other end.
Its manufacture method may further comprise the steps:
(1) preparation slurry
(1) material component and the percentage by weight thereof with the piezo-resistance film is respectively:
Zinc oxide (ZnO) 83.70%;
Bismuth oxide (Bi
2O
3) 4.70%;
Cobalt oxide (Co
2O
3) 1.32%;
Manganese carbonate (MnCO
3) 2.38%;
Niobium oxide (Nb
2O
5) 1.20%;
Titanium oxide (TiO
2) 1.64%;
Chromium oxide (Cr
2O
3) 0.80%;
Nickel oxide (Ni
2O
3) 1.24%;
Antimony oxide (Sb
2O
3) 2.66%;
Boron oxide (B
2O
3) 0.35%;
Aluminium oxide (Al
2O
3) 0.01% mix, ball milling, make slurry;
(2) be respectively that 60% silver (Ag) and 40% palladium (Pd) are mixed and made into slurry with the material component of interior electrode and percentage by weight thereof;
(3) glass insulating material is made slurry, the material component and the percentage by weight thereof of described glass insulating material are respectively:
Silica (SiO
2) 54%;
Aluminium oxide (Al
2O
3) 18%;
Boron oxide (B
2O
3) 13%;
Calcium oxide (CaO) 5%;
Zinc oxide (ZnO) 8%;
Magnesium oxide (MgO) 2% is mixed and made into slurry;
(2) laminated
Piezo-resistance film slurry is adopted the individual layer piezo-resistance film that comprises curtain coating, mode of printing making substrate infrabasal plate;
Both ends adopt mode of printing to make the interior electrode of setting pattern on infrabasal plate in interior electrode silver palladium slurry;
The employing of interior electrode silver palladium slurry is comprised oven dry, dries the mode drying;
There is being the interior electrode surface employing of setting pattern to comprise curtain coating, the middle individual layer piezo-resistance of mode of printing making film;
Number according to interior electrode pattern in the piezo-resistance substrate repeats electrode, middle individual layer piezo-resistance film in the above step continuation making;
At last piezo-resistance film slurry is adopted and comprise that curtain coating, mode of printing make the individual layer piezo-resistance film of substrate upper substrate on above-mentioned laminated surface;
(3) cutting
Laminated piezo-resistance substrate cut into meet product standard overall dimension, make single piezo-resistance substrate;
(4) binder removal
Piezo-resistance substrate after the cutting is placed on the organic principle of getting rid of in the binder removal stove wherein, and dump temperature is 380 ℃, and the binder removal time is 24 hours;
(5) sintering
Piezo-resistance substrate behind the binder removal is placed on sinters porcelain body in the sintering furnace into, sintering temperature is 1120 ℃, and sintering time is 2 hours;
(6) make the end-blocking electrode
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make end-blocking electrode 2, the silver ink firing temperature is 780 ℃, and the silver ink firing time is 1 hour;
(7) substrate insulation paste surface treatment
Adopt printing or immersion or spray application mode to be coated in the porcelain body surface that sinters in the insulating material slurry, except laminated piezo-resistance substrate two-end part and the interior electrode surface;
The employing of insulating material slurry is comprised oven dry, dries the mode drying;
Have the piezo-resistance substrate of insulation paste to be placed on dried surface treatment and sinter insulating barrier in the sintering furnace into, sintering temperature is 950 ℃, and sintering time is 2 hours;
(8) make two end electrodes
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make two end electrodes, the silver ink firing temperature is 780 ℃, and the silver ink firing time is 1 hour;
(9) electroplate
Two end electrodes electronickelling successively, tin with making promptly make finished product.
Embodiment 2: the direct-connected MLV of interior electrode and termination electrode.
Interior electrode as shown in Figure 4 and the direct-connected piezo-resistance of termination electrode are made up of piezo-resistance substrate 3, glass dielectric layer 4 and termination electrode 1.
The interior electrode of one end of each type piezoresistor unit directly is connected with the termination electrode 1 of a corresponding end, and the interior electrode of the other end of each type piezoresistor unit directly is connected with the termination electrode 1 of the corresponding other end.
Its manufacture method may further comprise the steps:
(1) preparation slurry is with () of embodiment 1;
(2) laminated, with (two) of embodiment 1;
(3) cutting is with (three) of embodiment 1;
(4) binder removal is with (four) of embodiment 1;
(5) sintering is with (five) of embodiment 1;
(6) substrate insulation paste surface treatment is with (seven) of embodiment 1
(7) make two end electrodes
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make two end electrodes, the silver ink firing temperature is 780 ℃, and the silver ink firing time is 1 hour;
(8) electroplate, with (nine) of embodiment 1.
Embodiment 3: termination electrode and the direct-connected MLV of piezo-resistance substrate.
Termination electrode as shown in Figure 5 and the direct-connected piezo-resistance of piezo-resistance substrate are made up of piezo-resistance substrate 3, organic material insulating barrier 9 and termination electrode 1.
The two ends of piezo-resistance substrate directly are connected with two termination electrodes 1 respectively;
The interior electrode of one end of each type piezoresistor unit directly is connected with the termination electrode 1 of a corresponding end, and the interior electrode of the other end of each type piezoresistor unit directly is connected with the termination electrode 1 of the corresponding other end.
Its manufacture method may further comprise the steps:
(1) preparation slurry
(1) material of piezo-resistance film is made slurry, with (one) (1) of embodiment 1;
(2) material of interior electrode is made slurry, with (one) (2) of embodiment 1;
(3) with organic polymer nonconductive material form slurry, described organic polymer insulating material is an epoxy resin;
(2) laminated, with (two) of embodiment 1;
(3) cutting is with (three) of embodiment 1;
(4) binder removal is with (four) of embodiment 1;
(5) sintering is with (five) of embodiment 1;
(6) make two end electrodes, with (seven) of embodiment 2;
(7) substrate insulation paste surface treatment
Adopt printing or immersion or spray application mode to be coated in the porcelain body surface that sinters in the insulating material slurry, except laminated piezo-resistance substrate two-end part and the interior electrode surface;
The employing of insulating material slurry is comprised oven dry, dries the mode drying;
Have the laminated piezo-resistance substrate of insulating material slurry to be placed on dried surface and be solidified into insulating barrier in the curing oven, curing temperature is 150 ℃, and be 1 hour curing time;
(8) electroplate, with (nine) of embodiment 1.
Above content be in conjunction with concrete preferred implementation to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, just make some simple deduction or replace, all should be considered as belonging to the scope of patent protection that the present invention is determined by claims of being submitted to.
Claims (11)
1. a MLV comprises two termination electrodes, an infrabasal plate and a upper substrate, it is characterized in that:
Be provided with between the described upper and lower substrate by overlapping multilayer and comprise the piezo-resistance substrate that the type piezoresistor unit of interior electrode and piezo-resistance film is formed;
At upper and lower substrate surface, and be provided with insulating barrier between interior electrode and the termination electrode;
Be provided with the end-blocking electrode that is connected with a termination electrode respectively at the two ends of described piezo-resistance substrate;
The interior electrode of one end of each type piezoresistor unit is connected with the end-blocking electrode of a corresponding end, and the interior electrode of the other end of each type piezoresistor unit is connected with the end-blocking electrode of the corresponding other end.
2. MLV according to claim 1 is characterized in that:
The material component and the percentage by weight thereof of described piezo-resistance film are respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000%.
3. MLV according to claim 1 and 2 is characterized in that: the material component and the percentage by weight thereof of electrode are respectively in described:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50%.
4. MLV according to claim 3 is characterized in that: described insulating barrier is a kind of in glass dielectric layer, the high-molecular organic material insulating barrier, and the material component and the percentage by weight thereof of described glass dielectric layer are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10%;
Described high-molecular organic material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins.
5. there is the manufacture method of the MLV of glass dielectric layer in one kind between electrode and the termination electrode, may further comprise the steps:
(1) preparation slurry
(1) material component and the percentage by weight thereof with the piezo-resistance film is respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000% mix, ball milling, make slurry;
(2) material component and the percentage by weight thereof with interior electrode is respectively:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50% is mixed and made into slurry;
(3) with a kind of slurry of making in glass insulating material, the organic polymer insulating material, the material component and the percentage by weight thereof of described glass insulating material are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10% is mixed and made into slurry;
Described organic polymer insulating material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins;
(2) laminated
Piezo-resistance film slurry is adopted the individual layer piezo-resistance film that comprises curtain coating, mode of printing making substrate infrabasal plate;
Both ends adopt mode of printing to make the interior electrode of setting pattern on infrabasal plate in interior electrode silver palladium slurry;
The employing of interior electrode silver palladium slurry is comprised oven dry, dries the mode drying;
There is being the interior electrode surface employing of setting pattern to comprise curtain coating, the middle individual layer piezo-resistance of mode of printing making film;
Number according to interior electrode pattern in the piezo-resistance substrate repeats electrode, middle individual layer piezo-resistance film in the above step continuation making;
At last piezo-resistance film slurry is adopted and comprise that curtain coating, mode of printing make the individual layer piezo-resistance film of substrate upper substrate on above-mentioned laminated surface;
(3) cutting
Laminated piezo-resistance substrate cut into meet product standard overall dimension, make single piezo-resistance substrate;
(4) binder removal
Piezo-resistance substrate after the cutting is placed on the organic principle of getting rid of in the binder removal stove wherein, and dump temperature is 100 ℃～500 ℃, and the binder removal time is 12 hours～36 hours;
(5) sintering
Piezo-resistance substrate behind the binder removal is placed on sinters porcelain body in the sintering furnace into, sintering temperature is 1000 ℃～1200 ℃, and sintering time is 0.5 hour～5.0 hours;
(6) make the end-blocking electrode
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make the end-blocking electrode, the silver ink firing temperature is 500 ℃～900 ℃, and the silver ink firing time is 0.16 hour～2.00 hours;
(7) substrate insulation paste surface treatment
Adopt printing or immersion or spray application mode to be coated in the porcelain body surface that sinters in the insulating material slurry, except laminated piezo-resistance substrate two-end part and the interior electrode surface;
The employing of insulating material slurry is comprised oven dry, dries the mode drying;
There is the laminated piezo-resistance substrate of insulating material slurry to be placed on sintering in sintering/curing oven/be solidified into insulating barrier on dried surface, sintering/curing temperature is 400 ℃～1000 ℃/30 ℃～300 ℃, and be 0.1 hour～4.0 hours/0.16 hour～1.50 hours sintering/curing time;
(8) make two end electrodes
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make two end electrodes, the silver ink firing temperature is 500 ℃～900 ℃, and the silver ink firing time is 0.16 hour～2.00 hours;
(9) electroplate
Two end electrodes electronickelling successively, tin with making promptly make finished product.
6. a MLV comprises two termination electrodes, an infrabasal plate and a upper substrate, it is characterized in that:
Be provided with between the described upper and lower substrate by overlapping multilayer and comprise the piezo-resistance substrate that the type piezoresistor unit of interior electrode and piezo-resistance film is formed;
Be provided with insulating barrier at upper and lower substrate surface;
The interior electrode of one end of each type piezoresistor unit directly is connected with the termination electrode of a corresponding end, and the interior electrode of the other end of each type piezoresistor unit directly is connected with the termination electrode of the corresponding other end.
7. MLV according to claim 6 is characterized in that:
The material component and the percentage by weight thereof of described piezo-resistance film are respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000%;
The material component and the percentage by weight thereof of electrode are respectively in described:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50%;
Described insulating barrier is a kind of in glass dielectric layer, the high-molecular organic material insulating barrier, and the material component and the percentage by weight thereof of described glass dielectric layer are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10%;
Described high-molecular organic material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins.
8, the manufacture method of a kind of interior electrode and the direct-connected MLV of termination electrode may further comprise the steps:
(1) preparation slurry
(1) material component and the percentage by weight thereof with the piezo-resistance film is respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000% mix, ball milling, make slurry;
(2) material component and the percentage by weight thereof with interior electrode is respectively:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50% is mixed and made into slurry;
(3) with a kind of slurry of making in glass insulating material, the organic polymer insulating material, the material component and the percentage by weight thereof of described glass insulating material are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10% is mixed and made into slurry;
Described organic polymer insulating material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins;
(2) laminated
Piezo-resistance film slurry is adopted the individual layer piezo-resistance film that comprises curtain coating, mode of printing making substrate infrabasal plate;
Adopt mode of printing on infrabasal plate, to make the interior electrode of setting pattern in interior electrode silver palladium slurry;
The employing of interior electrode silver palladium slurry is comprised oven dry, dries the mode drying;
There is being the interior electrode surface employing of setting pattern to comprise curtain coating, the middle individual layer piezo-resistance of mode of printing making film;
Number according to interior electrode pattern in the piezo-resistance substrate repeats electrode, middle individual layer piezo-resistance film in the above step continuation making;
At last piezo-resistance film slurry is adopted and comprise that curtain coating, mode of printing make the individual layer piezo-resistance film of substrate upper substrate on above-mentioned laminated surface;
(3) cutting
Laminated piezo-resistance substrate cut into meet product standard overall dimension, make single piezo-resistance substrate;
(4) binder removal
Piezo-resistance substrate after the cutting is placed on the organic principle of getting rid of in the binder removal stove wherein, and dump temperature is 100 ℃～500 ℃, and the binder removal time is 12 hours～36 hours;
(5) sintering
Piezo-resistance substrate behind the binder removal is placed on sinters porcelain body in the sintering furnace into, sintering temperature is 1000 ℃～1200 ℃, and sintering time is 0.5 hour～5.0 hours;
(6) substrate insulation paste surface treatment
Adopt printing or immersion or spray application mode to be coated in the porcelain body surface that sinters in the insulating material slurry, except laminated piezo-resistance substrate two-end part and the interior electrode surface;
The employing of insulating material slurry is comprised oven dry, dries the mode drying;
There is the laminated piezo-resistance substrate of insulating material slurry to be placed on sintering in sintering/curing oven/be solidified into insulating barrier on dried surface, sintering/curing temperature is 400 ℃～1000 ℃/30 ℃～300 ℃, and be 0.1 hour～4.0 hours/0.16 hour～1.50 hours sintering/curing time;
(7) make two end electrodes
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make two end electrodes, the silver ink firing temperature is 500 ℃～900 ℃, and the silver ink firing time is 0.16 hour～2.00 hours;
(8) electroplate
Two end electrodes electronickelling successively, tin with making promptly make finished product.
9. a MLV comprises two termination electrodes, an infrabasal plate and a upper substrate, it is characterized in that:
Be provided with between the described upper and lower substrate by overlapping multilayer and comprise the piezo-resistance substrate that the type piezoresistor unit of interior electrode and piezo-resistance film is formed;
Be provided with insulating barrier at upper and lower substrate surface;
The two ends of described piezo-resistance substrate directly are connected with two termination electrodes respectively;
The interior electrode of one end of each type piezoresistor unit directly is connected with the termination electrode of a corresponding end, and the interior electrode of the other end of each type piezoresistor unit directly is connected with the termination electrode of the corresponding other end.
10. MLV according to claim 9 is characterized in that:
The material component and the percentage by weight thereof of described piezo-resistance film are respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 3.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000%;
The material component and the percentage by weight thereof of electrode are respectively in described:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50%;
Described insulating barrier is a kind of in glass dielectric layer, the high-molecular organic material insulating barrier, and the material component and the percentage by weight thereof of described glass dielectric layer are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～35%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10%;
Described high-molecular organic material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins.
11. the manufacture method of termination electrode and the direct-connected MLV of element substrate may further comprise the steps:
(1) preparation slurry
(1) material component and the percentage by weight thereof with the piezo-resistance film is respectively:
Zinc oxide (ZnO) 70.00%～97.00%;
Bismuth oxide (Bi
2O
3) 0.01%～20.00%;
Cobalt oxide (Co
2O
3) 0.01%～18.00%;
Manganese carbonate (MnCO
3) 0.01%～18.00%;
Niobium oxide (Nb
2O
5) 0.02%～16.00%;
Titanium oxide (TiO
2) 0.01%～15.00%;
Chromium oxide (Cr
2O
3) 0.01%～13.00%;
Nickel oxide (Ni
2O
3) 0.01%～13.00%;
Antimony oxide (Sb
2O
3) 0.01%～13.00%;
Boron oxide (B
2O
3) 0.01%～10.00%;
Aluminium oxide (Al
2O
3) 0.001%～5.000% mix, ball milling, make slurry;
(2) material component and the percentage by weight thereof with interior electrode is respectively:
Silver (Ag) 50%～100%;
Palladium (Pd) 0%～50% is mixed and made into slurry;
(3) with a kind of slurry of making in glass insulating material, the organic polymer insulating material, the material component and the percentage by weight thereof of described glass insulating material are respectively:
Silica (SiO
2) 40%～80%;
Aluminium oxide (Al
2O
3) 10%～3 5%;
Boron oxide (B
2O
3) 5%～20%;
Calcium oxide (CaO) 1%～20%;
Zinc oxide (ZnO) 1%～15%;
Magnesium oxide (MgO) 1%～10% is mixed and made into slurry;
Described organic polymer insulating material is a kind of in epoxy resin, organic siliconresin, mylar, the phenolic resins;
(2) laminated
Piezo-resistance film slurry is adopted the individual layer piezo-resistance film that comprises curtain coating, mode of printing making substrate infrabasal plate;
Adopt mode of printing on infrabasal plate, to make the interior electrode of setting pattern in interior electrode silver palladium slurry;
The employing of interior electrode silver palladium slurry is comprised oven dry, dries the mode drying;
There is being the interior electrode surface employing of setting pattern to comprise curtain coating, the middle individual layer piezo-resistance of mode of printing making film;
Number according to interior electrode pattern in the piezo-resistance substrate repeats electrode, middle individual layer piezo-resistance film in the above step continuation making;
At last piezo-resistance film slurry is adopted and comprise that curtain coating, mode of printing make the individual layer piezo-resistance film of substrate upper substrate on above-mentioned laminated surface;
(3) cutting
Laminated piezo-resistance substrate cut into meet product standard overall dimension, make single piezo-resistance substrate;
(4) binder removal
Piezo-resistance substrate after the cutting is placed on the organic principle of getting rid of in the binder removal stove wherein, and dump temperature is 100 ℃～500 ℃, and the binder removal time is 12 hours～36 hours;
(5) sintering
Piezo-resistance substrate behind the binder removal is placed on sinters porcelain body in the sintering furnace into, sintering temperature is 1000 ℃～1200 ℃, and sintering time is 0.5 hour～5.0 hours;
(6) make two end electrodes
Adopt dipping to be stained with the electrode coated slurry end-blocking of silver-colored mode on single piezo-resistance substrate two-end part surface behind the sintering and make two end electrodes, the silver ink firing temperature is 500 ℃～900 ℃, and the silver ink firing time is 0.16 hour～2.00 hours;
(7) substrate insulation paste surface treatment
Adopt printing or immersion or spray application mode to be coated in the porcelain body surface that sinters in the insulating material slurry, except laminated piezo-resistance substrate two-end part and the interior electrode surface;
The employing of insulating material slurry is comprised oven dry, dries the mode drying;
There is the laminated piezo-resistance substrate of insulating material slurry to be placed on sintering in sintering/curing oven/be solidified into insulating barrier on dried surface, sintering/curing temperature is 400 ℃～1000 ℃/30 ℃～300 ℃, and be 0.1 hour～4.0 hours/0.16 hour～1.50 hours sintering/curing time;
(8) electroplate
Two end electrodes electronickelling successively, tin with making promptly make finished product.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100620480A CN100481279C (en) | 2006-08-08 | 2006-08-08 | Multiple field sheet type piezoresistor and producing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100620480A CN100481279C (en) | 2006-08-08 | 2006-08-08 | Multiple field sheet type piezoresistor and producing method thereof |
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|---|---|
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| CN100481279C CN100481279C (en) | 2009-04-22 |
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