CN1900146B - Chemical and mechanical polishing liquid - Google Patents
Chemical and mechanical polishing liquid Download PDFInfo
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- CN1900146B CN1900146B CN2005100279909A CN200510027990A CN1900146B CN 1900146 B CN1900146 B CN 1900146B CN 2005100279909 A CN2005100279909 A CN 2005100279909A CN 200510027990 A CN200510027990 A CN 200510027990A CN 1900146 B CN1900146 B CN 1900146B
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- acid
- mechanical polishing
- chemical mechanical
- salt
- polishing liquid
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- 238000005498 polishing Methods 0.000 title claims abstract description 152
- 239000000126 substance Substances 0.000 title claims abstract description 103
- 239000007788 liquid Substances 0.000 title claims description 98
- 239000002253 acid Substances 0.000 claims abstract description 26
- 150000003839 salts Chemical class 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- 239000004411 aluminium Substances 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 16
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 15
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 12
- 239000012964 benzotriazole Substances 0.000 claims description 12
- 150000002763 monocarboxylic acids Chemical class 0.000 claims description 12
- 239000006061 abrasive grain Substances 0.000 claims description 9
- -1 polyoxyethylene Polymers 0.000 claims description 9
- 150000003863 ammonium salts Chemical group 0.000 claims description 8
- 239000002512 suppressor factor Substances 0.000 claims description 8
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 7
- 239000001103 potassium chloride Substances 0.000 claims description 7
- 235000011164 potassium chloride Nutrition 0.000 claims description 7
- 159000000000 sodium salts Chemical class 0.000 claims description 7
- 239000001384 succinic acid Substances 0.000 claims description 7
- 239000013543 active substance Substances 0.000 claims description 6
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 5
- 229960003330 pentetic acid Drugs 0.000 claims description 5
- RNMCCPMYXUKHAZ-UHFFFAOYSA-N 2-[3,3-diamino-1,2,2-tris(carboxymethyl)cyclohexyl]acetic acid Chemical compound NC1(N)CCCC(CC(O)=O)(CC(O)=O)C1(CC(O)=O)CC(O)=O RNMCCPMYXUKHAZ-UHFFFAOYSA-N 0.000 claims description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229940095064 tartrate Drugs 0.000 claims description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 150000003973 alkyl amines Chemical class 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims description 2
- 150000002460 imidazoles Chemical class 0.000 claims description 2
- 150000003217 pyrazoles Chemical class 0.000 claims description 2
- 239000000654 additive Substances 0.000 abstract 2
- 230000000996 additive effect Effects 0.000 abstract 2
- 239000012530 fluid Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 239000008187 granular material Substances 0.000 description 16
- 230000007797 corrosion Effects 0.000 description 14
- 238000005260 corrosion Methods 0.000 description 14
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 239000002002 slurry Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229960001866 silicon dioxide Drugs 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229960005363 aluminium oxide Drugs 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention discloses a kind of chemical and mechanical polishing fluid, which includes at least one kind of grinding grain, one kind of chemical additive and one kind of carrier, where the chemical additive is polycarboxylic acid and/or its salt. The chemical and mechanical polishing fluid can raise the flatness of the polished metal surface, lower the metal polishing rate obviously, optimize the dielectric polishing rate and expand technological parameter window.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
Development along with microelectronics; The very large scale integration chip integration is up to tens components and parts; Characteristic dimension has got into nano level; This just requires nearly hundred road technology, especially multilayer wirings, substrate, medium in the microelectronic technique must carry out the leveling of the chemical machinery overall situation, and chemically machinery polished (CMP) has been proved to be best leveling method.
In cmp method, the polished surface of substrate is directly contacted with rotating polishing pad, exert pressure at backside of substrate simultaneously.During polishing; Polishing pad rotates with operator's console; The power that keeps down at backside of substrate simultaneously; The liquid (being commonly referred to chemical mechanical polishing liquid) of abrasive material and chemically reactive solution composition is coated on the polishing pad, and this chemical mechanical polishing liquid begins to carry out polishing process with the film generation chemical reaction and the mechanical effect of polishing.Chemical mechanical polishing liquid is a kind of important factor in CMP, and can choose the polishing performance that changes of suitable chemical mechanical polishing liquid according to the needs of processing procedure.
In typical chemical mechanical polishing of metals, defect level is higher usually, especially has problems such as spot corrosion, limit erosion, corrosion.And polishing speed is also very high, and is bigger to the degree of injury of metallic surface, is prone to produce as problems such as scuffing, surface irregularity.Like U.S. Pat 5,209,816, US6,039,891, US6,1502,60, US5,980,775, US6,068,787, US5,958,288, US6,451,697 and US6,6167,17 etc.
Summary of the invention
The objective of the invention is provides a kind of chemical mechanical polishing liquid in order to address the above problem.
The objective of the invention is to realize through following technical proposal: chemical mechanical polishing liquid of the present invention comprises at least a abrasive grains, a kind of chemicaladditives and a kind of carrier; Wherein, this chemicaladditives is polycarboxylic acid compound and/or its salt.
Chemical mechanical polishing liquid of the present invention can polish following metallic film material: aluminium, copper, tantalum, tantalum nitride, titanium, titanium oxide, silver, gold, ruthenium or the like are mainly used in the polished aluminum film.Compare with typical metallic substance chemical mechanical polishing liquid, the present invention uses specific chemicaladditives to come to reduce significantly the medal polish defect level, improves metallic surface planarization level.Typical metallic substance chemical mechanical polishing liquid all has higher medal polish speed; Thereby be unfavorable for the intact of metallic surface; Chemical mechanical polishing liquid of the present invention then can reduce the polishing speed of metal significantly, and prevents metallic corrosion, thereby reduces the medal polish defect level and improve metallic surface planarization level; Improving the quality of metallic surface, thereby improve the qualification rate of product wafer significantly.
Chemical mechanical polishing liquid of the present invention not only can polish above-mentioned metallic film material, but also can polish figuratum wafer., simultaneously the differing materials on the wafer is polished during figuratum wafer in polishing, like the wafer of the pattern formed by aluminium, copper or tantalum and silicon-dioxide.
An outstanding feature of the present invention is that chemical mechanical polishing liquid of the present invention can not contain oxygenant, and can reach and the same polishing level of chemical mechanical polishing liquid that typically contains oxygenant.At the chemical mechanical polishing liquid that typically is used for the polishing metal; Oxygenant is an indispensable moity; And oxygenant is more unstable other composition in chemical mechanical polishing liquid, so the use of oxygenant can affect to the performance and life-span of chemical mechanical polishing liquid.Certainly, chemical mechanical polishing liquid of the present invention also can also contain oxygenant, with the polishing performance of further raising metallic surface.
Wherein, described polycarboxylic acid compound is the multipolymer of polyacrylic compounds and/or acrylic compounds, and described salt is ammonium salt, sylvite or sodium salt, and its molecular weight is 2,000～3, between 000,000.
The preferred following formula I compound of described polyacrylic compounds, multipolymer optimization styrene, MALEIC ANHYDRIDE or the propenoate of described acrylic compounds and the multipolymer of acrylic compounds:
Formula I
Wherein, R
1, R
2Be Wasserstoffatoms or carbonatoms independently less than 3 alkyl.
This polyacrylic compounds preferably is a ROHM, the R among the promptly above-mentioned formula I
1, R
2Be Wasserstoffatoms independently; The multipolymer of this acrylic compounds preferably is the propenoate PEMULEN TR2; Their molecular weight is preferably 2,000～1, between 000,000, and this polyacrylic molecular weight more preferably 30,000.
This abrasive grains can be any abrasive grains of the prior art, preferably is silicon-dioxide, aluminum oxide, cerium dioxide, titanium oxide and/or polymer abrasive grains.
This carrier is an inorganic carrier preferably, like water; Also can be the mixture of inorganic carrier and organic carrier, like the mixture of water and USP Kosher.
In chemical mechanical polishing liquid of the present invention, the concentration of this abrasive grains is that the concentration of 1～20 weight %, chemicaladditives is that 0.001～10 weight %, carrier are surplus.
Chemical mechanical polishing liquid of the present invention also preferably comprises suppressor factor.
The concentration of described suppressor factor preferably is 0.001～5 weight %, and described suppressor factor is benzotriazole, imidazoles and/or pyrazoles, preferred benzotriazole.
The chemical mechanical polishing liquid that contains suppressor factor of the present invention can also comprise monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt.
Preferred 0.1～10 weight % of the concentration of described monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt, more preferably 0.3～1.0 weight %.
Described monocarboxylic acid is preferably acetate, and described di-carboxylic acid is preferably oxalic acid, Succinic Acid and/or tartrate.Described polycarboxylic acid is preferably Hydrocerol A, cyclohexanediaminetetraacetic acid, diethylenetriamine pentaacetic acid, YD 30 and/or tanpic acid, and described salt is preferably ammonium salt, sylvite and/or sodium salt.
The chemical mechanical polishing liquid that does not contain suppressor factor of the present invention also can also comprise monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt.
Preferred 0.1～10 weight % of the concentration of described monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt, more preferably 0.3～1.0 weight %.
Described monocarboxylic acid preferably is an acetate; Described di-carboxylic acid preferably is oxalic acid, Succinic Acid and/or tartrate; Described polycarboxylic acid preferably is Hydrocerol A, cyclohexanediaminetetraacetic acid, diethylenetriamine pentaacetic acid, YD 30 and/or tanpic acid, and described salt is ammonium salt, sylvite and/or sodium salt.
Chemical mechanical polishing liquid of the present invention preferably also comprises oxygenant.This oxygenant can be any oxygenant of the prior art, preferably is hydrogen peroxide, iron nitrate, organo-peroxide and/or inorganic peroxide.
Chemical mechanical polishing liquid of the present invention preferably also comprises tensio-active agent and/or complexing agent.
This tensio-active agent preferably is AEO, Z 150PH, polyoxyethylene alkyl amine and/or alkylol amide.
This complexing agent preferably is the compound of phosphorous acidic group, azanol base, amine salt and/or amido.
Chemical mechanical polishing liquid of the present invention can also comprise one or more in dispersion agent, catalyzer and the pH regulator agent.
Another object of the present invention provides the purposes of chemical mechanical polishing liquid of the present invention in the polishing metal, and described metal is aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver or golden, preferred polished aluminum.
Positive progressive effect of the present invention is: chemical mechanical polishing liquid of the present invention can obviously reduce ratio of defects, improves metallic surface planarization level, reduces the polishing speed of metal significantly, has optimized dielectric polishing speed, enlarges the processing parameter window.
Description of drawings
Figure 1A is for after containing PAA chemical mechanical polishing liquid polishing, wafer surface corrosive microscope details in a play not acted out on stage, but told through dialogues figure, and wherein, the black matrix among the figure is a metallic aluminium, white is corrosion;
Figure 1B is after the chemical mechanical polishing liquid that contains PAA of the present invention polishes, wafer surface corrosive microscope details in a play not acted out on stage, but told through dialogues figure;
Fig. 2 A is for after containing PAA chemical mechanical polishing liquid polishing, the microscope details in a play not acted out on stage, but told through dialogues figure of wafer surface residual particles, and the black matrix among the figure is a metallic aluminium, white round dot is a residual particles;
Fig. 2 B is after the chemical mechanical polishing liquid that contains PAA of the present invention polishes, the microscope details in a play not acted out on stage, but told through dialogues figure of wafer surface residual particles;
Fig. 3 A is for after containing PAA chemical mechanical polishing liquid polishing, the microscope light field figure of wafer surface spot corrosion, and wherein the stain among the figure is spot corrosion;
Fig. 3 B is after the chemical mechanical polishing liquid that contains PAA of the present invention polishes, the microscope light field figure of wafer surface spot corrosion;
Fig. 4 A contains the chemical mechanical polishing liquid polishing of PAA for use is of the present invention before, the AFM figure of wafer surface roughness;
Fig. 4 B contains the chemical mechanical polishing liquid polishing of PAA for use is of the present invention after, the AFM figure of wafer surface roughness.
Embodiment
Embodiment 1
Chemical mechanical polishing liquid 1:20.0wt% silica dioxide granule, 10.0wt%PAA (molecular weight is 2000) and surplus are water, and pH is 7.7.
Embodiment 2
Chemical mechanical polishing liquid 2:20.0wt% silica dioxide granule, 10.0wt% propenoate PEMULEN TR2 (molecular weight is 2,000) and surplus are water, and pH is 7.7.
Embodiment 3
The silica dioxide granule of chemical mechanical polishing liquid 3:20.0wt%, 10.0wt%PAA (molecular weight is 2,000), 10.0wt% Succinic Acid and surplus are water, and pH is 7.7.
Embodiment 4
The silica dioxide granule of chemical mechanical polishing liquid 4:20.0wt%, 10.0wt%PAA (molecular weight is 2,000), 5.0wt%BTA and surplus are water, and pH is 7.7.
Embodiment 5
The silica dioxide granule of chemical mechanical polishing liquid 5:5.0wt%, 0.1wt%PAA (molecular weight is 30,000), 0.1wt%BTA, 0.5wt% Succinic Acid and surplus are water, and pH is 4.25.
Embodiment 6
Ammonium salt of the silica dioxide granule of chemical mechanical polishing liquid 6:3wt%, 0.006wt% ROHM (abbreviating PAA as) (molecular weight is 30,000) and surplus are water, and pH is 3.
Embodiment 7
The silica dioxide granule of chemical mechanical polishing liquid 7:3wt%, 0.006wt%PAA ammonium salt (molecular weight is 30,000), 0.1wt%BTA (benzotriazole) and surplus are water, and pH is 3.
Embodiment 8
The silica dioxide granule of chemical mechanical polishing liquid 8:3wt%, 0.004wt%PAA ammonium salt (molecular weight is 30,000), 0.1wt%BTA, 0.5wt% diethylenetriamine pentaacetic acid and surplus are water, pH is 3.
Embodiment 9
Chemical mechanical polishing liquid 9:6wt% silica dioxide granule, 0.12wt%PAA ammonium salt (molecular weight is 30,000), 0.05wt%BTA and surplus are water, and pH is 3.
Embodiment 10
Chemical mechanical polishing liquid 10:6wt% silica dioxide granule, 0.200wt%PAA ammonium salt (molecular weight is 30,000), 0.001wt%BTA and surplus are water, and pH is 3.
Embodiment 11
Chemical mechanical polishing liquid 11:1wt% silica dioxide granule, 0.001wt%PAA (molecular weight is 3,000,000) and surplus are water, and pH is 3.
Embodiment 12
Chemical mechanical polishing liquid 12:1wt% silica dioxide granule, 0.001wt% propenoate PEMULEN TR2 (molecular weight is 3,000,000) and surplus are water, and pH is 3.
Embodiment 13
Chemical mechanical polishing liquid 13:1wt% silica dioxide granule, 0.001wt%PAA (molecular weight is 3,000,000), 0.1wt% Succinic Acid and surplus are water, and pH is 3.
Embodiment 14
Chemical mechanical polishing liquid 14:1wt% silica dioxide granule, 0.001wt%PAA (molecular weight is 3,000,000), 0.1wt%BTA and surplus are water, and pH is 3.
Embodiment 15
Chemical mechanical polishing liquid 15:5.0wt% silica dioxide granule, 0.1wt%PAA (molecular weight is 30,000), 0.1wt.%BTA, 0.5wt% Succinic Acid, 0.5wt%H
2O
2With surplus be water, pH is 4.25.
The comparative example 1
Contrast chemical mechanical polishing liquid 1 ': 3wt% silica dioxide granule, surplus are water, and pH is 3.
Effect embodiment 1
Detect above-mentioned chemical mechanical polishing liquid 1 ', the influence of 1,5～9,15 pair of polishing speed; With they polished aluminum films, the processing parameter during polishing is: overdraft 2psi, the rotating speed 100rpm of polishing disk (300mm diameter), rubbing head rotating speed 105rpm, polishing slurries flow velocity 200ml/min.Experimental result is seen table 1.
Table 1
Experimental result shows: chemical mechanical polishing liquid of the present invention all drops to the polishing speed of aluminium below the 400A/min.
Effect embodiment 2
Detect above-mentioned chemical mechanical polishing liquid 1 ', 1～14 pair remove the corrosive influence; With the aluminium film surface on their polished wafers; Processing parameter during polishing is: overdraft 2psi, the rotating speed 100rpm of polishing disk (300mm diameter), rubbing head rotating speed 105rpm, polishing slurries flow velocity 200ml/min, experimental result is seen Figure 1A and 1B.Figure 1A for the contrast chemical mechanical polishing liquid 1 ' the result; Figure 1B is the result of above-mentioned chemical mechanical polishing liquid 6.
Experimental result shows: use chemical mechanical polishing liquid of the present invention can remove the corrosion of aluminium wafer surface significantly.Use the not corrosion (seeing Figure 1B) of aluminium wafer surface after the chemical mechanical polishing liquid polishing of the PAA of containing of the present invention, and use the contrast chemical mechanical polishing liquid 1 that do not contain PAA ' the aluminium wafer surface a large amount of corrosion (seeing Figure 1A) is arranged.The result of chemical mechanical polishing liquid 1～5,7～14 is identical with chemical mechanical polishing liquid 6, does not give unnecessary details one by one at this.
Effect embodiment 3
Detect above-mentioned chemical mechanical polishing liquid 1 ', 1～7,9～11,15 pair of influence of removing residual particles; They are used for the aluminium film surface on the polished wafer, and the processing parameter during polishing is: overdraft 2psi, the rotating speed 100rpm of polishing disk (300mm diameter), rubbing head rotating speed 105rpm, polishing slurries flow velocity 200ml/min.After the polishing, chemical mechanical polishing liquid kept 30 minutes on the aluminium film, scrubbed the aluminium film surface with deionized water and PVA cylinder then.Experimental result is seen Fig. 2 A and 2B.Fig. 2 A for the contrast chemical mechanical polishing liquid 1 ' the result; Fig. 2 B is the result of above-mentioned chemical mechanical polishing liquid 6.
Experimental result shows: use chemical mechanical polishing liquid of the present invention can remove the residual particles at aluminium wafer surface edge significantly.Use the aluminium wafer surface edge after the chemical mechanical polishing liquid polishing of the PAA of containing of the present invention not have residual particles (seeing Fig. 2 B), and use the contrast chemical mechanical polishing liquid 1 that do not contain PAA ' aluminium wafer surface edge a large amount of residual particles (seeing Fig. 2 A) is arranged.The result of chemical mechanical polishing liquid 1～5,7,9～11,15 is identical with chemical mechanical polishing liquid 6, does not give unnecessary details one by one at this.
Effect embodiment 4
Detect above-mentioned chemical mechanical polishing liquid 1 ', 1～14 pair of influence of removing spot corrosion; They are used for the aluminium film surface on the polished wafer, and the processing parameter during polishing is: overdraft 2psi, the rotating speed 100rpm of polishing disk (300mm diameter), rubbing head rotating speed 105rpm, polishing slurries flow velocity 200ml/min.Experimental result is seen Fig. 3 A and 3B, Fig. 3 A for the contrast chemical mechanical polishing liquid 1 ' the result; Fig. 3 B is the result of above-mentioned chemical mechanical polishing liquid 6.
Experimental result shows: chemical mechanical polishing liquid of the present invention can be removed the spot corrosion of wafer surface.Use the aluminium wafer surface after the chemical mechanical polishing liquid polishing of the PAA of containing of the present invention not have spot corrosion (seeing Fig. 3 B), and use the contrast chemical mechanical polishing liquid 1 that do not contain PAA ' the aluminium wafer surface a large amount of spot corrosion (seeing Fig. 3 A) is arranged.The result of chemical mechanical polishing liquid 1～5,7～14 is identical with chemical mechanical polishing liquid 6, does not give unnecessary details one by one at this.
Effect embodiment 5
Detect the influence of the roughness on 5～11 pairs of aluminium surfaces of above-mentioned chemical mechanical polishing liquid.They are used for the aluminium film surface on the polished wafer, and the processing parameter during polishing is: overdraft 2psi, the rotating speed 100rpm of polishing disk (300mm diameter), rubbing head rotating speed 105rpm, polishing slurries flow velocity 200ml/min.Experimental result is seen Fig. 4 A and Fig. 4 B.
Experimental result shows: chemical mechanical polishing liquid of the present invention can reduce the roughness of wafer surface significantly.Use the Rms (roughness) of chemical mechanical polishing liquid polishing of the present invention aluminium wafer surface before to be 18.7A; And use the Rms (roughness) of the aluminium wafer surface after chemical mechanical polishing liquid 6 polishing of the PAA of containing of the present invention to be reduced to 1.86A; Reduced more than 10 times the effect highly significant.The result of chemical mechanical polishing liquid 5,7～11 is identical with chemical mechanical polishing liquid 6, does not give unnecessary details one by one at this.
Effect embodiment 6
Above-mentioned chemical mechanical polishing liquid 5～9 is respectively applied for pattern is made up of in polishing aluminium and silicon-dioxide wafer.Processing parameter during polishing is: overdraft 2psi, the rotating speed 100rpm of polishing disk (300mm diameter), rubbing head rotating speed 105rpm, polishing slurries flow velocity 200ml/min.The polishing speed of aluminium and silicon-dioxide is seen table 2.
Table 2?
The result shows: chemical mechanical polishing liquid of the present invention not only can the polishing metal wafer, but also can polish the wafer that contains pattern.
Claims (9)
1. chemical mechanical polishing liquid; It is characterized in that; Form by abrasive grains, polycarboxylic acid compound and/or its salt, tensio-active agent, carrier and monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt; Wherein, Described monocarboxylic acid is an acetate, and described di-carboxylic acid is oxalic acid, Succinic Acid and/or tartrate, and described polycarboxylic acid is Hydrocerol A, cyclohexanediaminetetraacetic acid, diethylenetriamine pentaacetic acid, YD 30 and/or tanpic acid; Described salt is ammonium salt, sylvite and/or sodium salt; Described tensio-active agent is: AEO, polyoxyethylene alkyl amine and/or alkylol amide, and wherein, the concentration of abrasive grains is that the concentration of 1～20 weight %, polycarboxylic acid compound and/or its salt is that the concentration of 0.001～10 weight %, described monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt is 0.1～10 weight %; Wherein, described polycarboxylic acid compound is the multipolymer of polyacrylic compounds and/or acrylic compounds, and described salt is ammonium salt, sylvite or sodium salt, and its molecular weight is 2,000～3, between 000,000.
2. chemical mechanical polishing liquid; It is characterized in that; Form by abrasive grains, polycarboxylic acid compound and/or its salt, tensio-active agent, carrier, suppressor factor and monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt; Wherein, Described monocarboxylic acid is an acetate, and described di-carboxylic acid is oxalic acid, Succinic Acid and/or tartrate, and described polycarboxylic acid is Hydrocerol A, cyclohexanediaminetetraacetic acid, diethylenetriamine pentaacetic acid, YD 30 and/or tanpic acid; Described salt is ammonium salt, sylvite and/or sodium salt; Described tensio-active agent is: AEO, polyoxyethylene alkyl amine and/or alkylol amide, and wherein, the concentration of abrasive grains is that the concentration of 1～20 weight %, polycarboxylic acid compound and/or its salt is that the concentration of 0.001～10 weight %, described monocarboxylic acid, di-carboxylic acid, polycarboxylic acid and/or its salt is that the concentration of 0.1～10 weight %, described suppressor factor is 0.001～5 weight %; Wherein, described polycarboxylic acid compound is the multipolymer of polyacrylic compounds and/or acrylic compounds, and described salt is ammonium salt, sylvite or sodium salt, and its molecular weight is 2,000～3, between 000,000.
3. chemical mechanical polishing liquid according to claim 1 and 2 is characterized in that this polyacrylic compounds is a ROHM, and the multipolymer of this acrylic compounds is the propenoate PEMULEN TR2, and its molecular weight is 2,000～1, between 000,000.
4. chemical mechanical polishing liquid according to claim 3 is characterized in that this polyacrylic molecular weight is 30,000.
5. chemical mechanical polishing liquid according to claim 1 and 2 is characterized in that this carrier is a water.
6. chemical mechanical polishing liquid according to claim 1 and 2 is characterized in that this carrier is water and USP Kosher.
7. chemical mechanical polishing liquid according to claim 2 is characterized in that described suppressor factor is benzotriazole, imidazoles and/or pyrazoles.
8. chemical mechanical polishing liquid according to claim 1 and 2, the concentration that it is characterized in that described polycarboxylic acid and/or its salt are 0.3～1.0 weight %.
9. according to claim 1 or claim 2 the purposes of chemical mechanical polishing liquid in the polishing metal is characterized in that described metal is aluminium, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver or golden.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2005100279909A CN1900146B (en) | 2005-07-21 | 2005-07-21 | Chemical and mechanical polishing liquid |
| PCT/CN2006/001702 WO2007009365A1 (en) | 2005-07-21 | 2006-07-17 | Chemical mechanical polishing liquid |
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| CN2005100279909A CN1900146B (en) | 2005-07-21 | 2005-07-21 | Chemical and mechanical polishing liquid |
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| CN101373340B (en) * | 2007-08-23 | 2013-07-10 | 安集微电子（上海）有限公司 | Cleaning agent of photoresist |
| CN101487993A (en) * | 2008-01-18 | 2009-07-22 | 安集微电子（上海）有限公司 | Thick-film photo resist cleaning agent |
| CN101550319A (en) * | 2008-04-03 | 2009-10-07 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN101685274B (en) * | 2008-09-26 | 2012-08-22 | 安集微电子（上海）有限公司 | Cleaning agent for thick-film photoresist |
| CN101685272A (en) * | 2008-09-26 | 2010-03-31 | 安集微电子（上海）有限公司 | Photoresist cleaning agent |
| CN101738880A (en) * | 2008-11-10 | 2010-06-16 | 安集微电子（上海）有限公司 | Thick film photoresist detergent |
| CN101750911A (en) * | 2008-11-28 | 2010-06-23 | 安集微电子（上海）有限公司 | Photoresist detergent composition |
| CN101747842B (en) * | 2008-12-19 | 2014-12-31 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| CN101906270A (en) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | Chemically-mechanical polishing solution |
| CN102073226B (en) * | 2009-11-20 | 2014-03-26 | 安集微电子（上海）有限公司 | Thick film photoresist cleaning solution and cleaning method thereof |
| CN102101977B (en) * | 2009-12-18 | 2015-09-16 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid |
| CN102268332B (en) * | 2010-06-01 | 2012-10-03 | 中国科学院上海微系统与信息技术研究所 | Cleaning liquid for phase change material after polishing |
| KR101907860B1 (en) * | 2010-10-07 | 2018-10-15 | 바스프 에스이 | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
| CN102757732B (en) * | 2012-06-28 | 2013-12-25 | 上海新安纳电子科技有限公司 | Chemico-mechanical polishing solution for Al substrate |
| CN103865402A (en) * | 2012-12-17 | 2014-06-18 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid |
| CN111378972B (en) * | 2018-12-29 | 2024-09-13 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN110564303B (en) * | 2019-09-24 | 2020-12-15 | 西南科技大学 | Polishing Fluid and Antioxidant Process for Lead Chemical Mechanical Polishing |
| CN113122141B (en) * | 2019-12-30 | 2024-08-02 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution |
| CN114507527A (en) * | 2021-12-13 | 2022-05-17 | 福建中安高新材料研究院有限公司 | ITO etching solution and preparation method and application method thereof |
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| US6632259B2 (en) * | 2001-05-18 | 2003-10-14 | Rodel Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
| JP5017574B2 (en) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | Cerium oxide abrasive and method for producing substrate |
| KR100507833B1 (en) * | 2001-08-20 | 2005-08-17 | 삼성코닝 주식회사 | Polishing composition comprising silica-coated ceria powder |
| WO2004101695A1 (en) * | 2003-05-15 | 2004-11-25 | Showa Denko K.K. | Polishing composition and polishing method |
| US20050104048A1 (en) * | 2003-11-13 | 2005-05-19 | Thomas Terence M. | Compositions and methods for polishing copper |
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| WO2007009365A1 (en) | 2007-01-25 |
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