CN1807681A - Evaporating device and method utilizing same - Google Patents

Abstract

The invention discloses a vapor deposition device and a vapor deposition method utilizing the vapor deposition device. In this vapor deposition device, the gas that requires relatively high energy for decomposition is decomposed by the plasma decomposition method and the heating body method, and the gas that requires relatively low energy for decomposition is decomposed by the heating body method. Evaporation is formed. When utilizing existing ICP-CVD devices or plasma devices such as PECVD to form an insulating film, there is a source gas that is difficult to completely decompose to make the characteristics of the vapor deposition deteriorate, and the use efficiency of the source gas is poor. The present invention aims to overcome This defect relates to a plasma and/or heater system vapor deposition device and a vapor deposition method using the vapor deposition device.

Description

Evaporation device and vapor deposition method using the same

technical field

The present invention relates to a vapor deposition method, and more specifically, to a vapor deposition device for forming a vapor deposition on a substrate using a hybrid chemical vapor deposition device using a plasma method or/and a heating body method and using the vapor deposition method. Device vapor deposition method.

Background technique

Plasma environments are used in various fields related to thin films, such as chemical vapor deposition, etching, and surface treatment. This is because there is an advantage that the plasma state can improve reaction efficiency in these steps, and the steps can be performed under favorable conditions.

Since plasma formation methods vary depending on the purpose of using plasma, various plasma formation devices are also being developed. Recently, in semiconductor manufacturing processes and the like, plasma processing apparatuses using high-density plasma capable of further improving process efficiency are being used more and more. Among high-density plasma processing devices, there are ECR (Electron Cyclotron Resonance: Electron Cyclotron Resonance) plasma processing devices using microwaves at resonant frequencies, and helical plasma processing devices using helicon waves or whistler waves. device and an inductively coupled plasma processing device utilizing high temperature and low pressure plasma.

In the Chemical Vapor Deposition (Chemical Vapor Deposition) device, the cross-sectional view of the ICP-CVD (Induced Couple Plasma Chemical Vapor Deposition) applicable to the inductively coupled plasma processing device is shown in Fig. 1, which is composed of an insulator and has the ability to maintain a vacuum A chamber (Chamber) 101, and an antenna 102 regularly arranged at the upper end of the chamber 101 to generate induced coupling plasma. At this time, a first power supply 103 for supplying power is connected to the antenna 102 .

A gas injection port 105 for injecting gas 104 into the chamber 101 is provided at the lower portion of the antenna 102 . At this time, the gas injection port 105 is usually formed by a showerhead so that the gas 104 can be uniformly supplied to the plasma formed by the antenna 102 .

The lower end of the chamber 101 is provided with a jig 107 for heating, cooling or fixing the substrate 106 which is the object to be processed by the ICP-CVD apparatus, and a second jig 107 for supplying power to the jig 107 is connected. Power 108. At this time, the second power source 108 can be used as a power source for heating the jig 107 or as a power source for giving the jig 107 an electrode function.

The side wall of the chamber 101 is provided with a door 109 for moving the substrate 106 to the inside or outside of the chamber 101, and is attached with an exhaust gas pump 110 containing air or gas from the chamber 101. Mouth 111.

However, the above chemical vapor phase device cannot completely decompose the source gas because it only utilizes the plasma method to vapor-deposit the insulating film. A high-quality insulating film is obtained.

Contents of the invention

Therefore, the present invention is developed to solve many shortcomings and problems in the above-mentioned prior art, and its purpose is to provide a vapor deposition device and a vapor deposition method using the vapor deposition device. In the vapor deposition device, decomposition A gas with a relatively high ability to decompose is decomposed by a plasma decomposition method and a heating body method, and a gas having a relatively low ability to decompose is decomposed by a heating body method, thereby forming vapor deposition on the substrate.

The above object of the present invention is achieved by a vapor deposition device comprising: a substrate on which a vapor deposition film is grown; a filter formed on a surface opposite to the film-forming surface of the substrate; The filter is an energy supply source configured to supply energy to the vapor deposition film.

In addition, the above object of the present invention is also achieved by the following structure, that is, an evaporation device, including: a chamber; a shower head located in a predetermined area inside the chamber; A fixture with a substrate; and a heating body located between the showerhead and the fixture, the showerhead includes: a first gas injection port and a second gas injection port; the interior of the showerhead connected to the first gas injection port the cavity; connected with the cavity, a plurality of first nozzles located on the surface of the shower head corresponding to the fixture; a second nozzle.

The above object of the present invention is achieved by the following vapor deposition device, that is, the vapor deposition device includes: a chamber; a shower head located in a specified area inside the chamber; corresponding to the shower head, a substrate is installed on the surface and a The filter at the lower part of the substrate constitutes a fixture for an energy supply source that supplies energy to the substrate; and a heating body located between the shower head and the fixture, the shower head includes: a first gas injection port and a second gas injection port an inlet; a cavity inside the shower head connected to the first gas injection port; connected to the cavity, a plurality of first nozzles located on the surface of the shower head corresponding to the fixture; and, connected to the second gas The injection port is connected to a plurality of second nozzles located on the surface of the spray head corresponding to the jig.

In addition, the above object of the present invention can also be achieved by a vapor deposition method in which the vapor deposition film is vapor-deposited at the stage of evacuating the interior of the chamber to vacuum and after evacuating the interior of the chamber to vacuum. In the vacuum vapor deposition step constituted by stages, there is an energy supply stage of supplying energy of a selective wavelength to the vapor deposition film to the vapor deposition film.

In addition, the above object of the present invention can also be achieved by a vapor deposition method including: a stage of placing a substrate in a chamber having a plasma generating region and a heating body; supplying a first gas and The stage of the second gas; the first gas passes through the plasma generation region and the heating body to form a first group, and the second gas passes through the heating body to form a second group; the second gas passes through the heating body to form a second group; A stage in which a group reacts with a second group to form an evaporated film on the substrate.

In addition, the above object of the present invention can also be achieved by a vapor deposition method including: a stage of placing a substrate in a chamber having a plasma generating region and a heating body; supplying a first gas and The stage of the second gas; the first gas passes through the plasma generation region and the heating body to form a first group, and the second gas passes through the heating body to form a second group; the second gas passes through the heating body to form a second group; A stage in which a first group reacts with a second group to form a vapor deposition film on the substrate, and supplies wavelength-selective energy to the vapor deposition film to the vapor deposition film.

Invention effect

Therefore, the vapor deposition device and the vapor deposition method using the vapor deposition device of the present invention have the following effects: by performing almost perfect decomposition of the source gas, not only the characteristics of the vapor deposition are excellent, but also the use efficiency of the source gas can be greatly improved. Therefore, a high-quality vapor-deposited film can be obtained by using only the plasma method or the heating body method.

In addition, by providing the energy supply source on the jig, energy can be supplied to the deposited film formed on the substrate, thereby facilitating the crystallization and annealing steps.

Description of drawings

Fig. 1 is the sectional view of the chemical vapor deposition device of prior art;

2 is a cross-sectional view of an evaporation device according to an embodiment of the present invention;

3A and 3B are enlarged cross-sectional views of a fixture of an evaporation device according to an embodiment of the present invention;

4A and 4B are cross-sectional views of an embodiment in which a vapor deposition film is formed using the vapor deposition apparatus according to the embodiment of the present invention.

Symbol Description

211: Nozzle

212: Hollow

213: First gas injection port

214: Second gas injection port

215: First Nozzle

216: Second nozzle

218: Cathode

231: Fixture

232: Substrate

301: first insulating film

302: second insulating film

Detailed ways

The above-mentioned purpose and technical structure of the present invention, and details based on the effects thereof can be clearly understood from the following detailed description referring to the accompanying drawings illustrating preferred embodiments of the present invention. In addition, in the drawings, the lengths, thicknesses, and the like of layers and regions are exaggerated for convenience of description. Throughout the specification, the same symbols denote the same structural elements.

Fig. 2 is a cross-sectional view of a vapor deposition device according to an embodiment of the present invention.

In this case, the vapor deposition apparatus is an apparatus capable of simultaneously performing a plasma method and a heating body method.

Referring to FIG. 2 , the vapor deposition device of the present invention includes a chamber 201 , a shower head 211 located in a predetermined area inside the chamber 201 , a heating body 221 and a jig 231 . At this time, the chamber 201 seals the inner space against the external environment. An exhaust port 203 including a vacuum pump 202 for maintaining the vacuum inside the chamber 201 is connected to the chamber 201 .

In addition, the shower head 211 has a cavity 212 serving as a plasma generation region, a first gas injection port 213 , and a second gas injection port 214 . The first gas injection port 213 is provided on one side surface of the shower head 211, and the first nozzle 215 connected to the cavity 212 and the second gas injection port 214 are provided on the other side surface. The second nozzle 216 . At this time, an electrode 218 connected to an external first power source 217 is provided on one side surface of the cavity 212 . In addition, the cavity 212 is formed inside the shower head 211 , and the plasma generated inside the cavity 212 is isolated by the shower head 211 , so the plasma will not affect other regions.

In addition, the heating body 221 is connected to an external power source 222 .

The jig 231 can be mounted on a surface substrate 232 .

At this time, the shower head 211 has a first gas injection port 213 and a second gas injection port 214 for injecting gas from the outside. A gas, the gas injection port 214 is used to inject a second gas with relatively low energy required for decomposition.

The "energy required for decomposition" refers to the energy required when the gas injected into the vapor deposition device is supplied in a molecular state in which a large number of atoms are bonded, and the gas in such a molecular state is decomposed or ionized in an atomic state. For example, in the case of silane (SiH ₄ ) gas, one silicon atom is bonded to four hydrogen atoms, and the energy for decomposing hydrogen from the silane gas can be called "energy required for decomposition".

At this time, in the case of the injected gas ammonia (NH ₃ ) and silane gas, since the first gas requires relatively higher energy for decomposition than the second gas, the As the ammonia gas, silane gas is used because the second gas requires relatively lower energy for decomposition than the first gas. That is, the types of the first gas and the second gas are determined according to what kind of gas the first gas and the second gas are, but the energy required to decompose the first gas and the second gas is relatively small. The high gas is the first gas, and the gas with relatively low energy required for decomposition is the second gas.

At this time, the first gas injected into the first gas injection port 213 is injected into the plasma generation region, that is, the cavity 212. Since the cavity 212 is installed on the surface of the cavity, the electrode 218 utilizes The first power supply 217 supplies the plasma region generated by the received power, so the injected first gas is partially decomposed by the plasma.

The first gas is injected into the chamber 201 through the plurality of first nozzles 215 provided on the surface of the shower head 211 corresponding to the jig 231 .

The first gas injected by the first nozzle 215 passes through the heating body 221 located between the shower head 211 and the clamp 231, and the first gas that is not decomposed by the plasma is almost completely decomposed by the heating body 221 , forming the first group. At this time, the heating body 221 is a filament made of tungsten, which generates heat greater than or equal to 1000°C (preferably 1500°C) of the gas by using the power applied from the second external power supply 222, and the heat is passed through the heat. The first gas is decomposed.

In addition, the second gas injected into the second injection port is not injected into the cavity 212, but is directly sprayed into the jig 201 from the second nozzle 216 provided on the surface of the shower head 211 corresponding to the jig 231, so The injected second gas passes through the heating body 221 and is decomposed to become a second radical.

Therefore, the first gas injected into the first gas injection port 213 passes through the cavity 212, which is a plasma generation region, and decomposes a predetermined amount, is sprayed from the first nozzle and injected into the jig 201, and then passes through the heating body 221 and decomposes again. , forming a first group, the second gas injected into the second gas injection port 214 is directly injected into the chamber 210 through the second nozzle 216, and the injected second gas is decomposed by the heating body 221 to form The second group, the first group reacts with the second group to form a predetermined thin film on the substrate 232 . (At this time, a large amount of substances can be used for the thin film, but by properly selecting the first gas and the second gas, not only an insulating film but also a conductive film can be formed). At this time, under the condition that the first gas and the second gas are respectively ammonia gas and silane gas, a silicon nitride film may be evaporated on the substrate 232 . At this time, when the first gas and the second gas are ammonia and silane gas respectively, the ammonia and silane contain hydrogen, which are difficult to completely decompose by a general evaporation device (especially the energy required for decomposition is high). ammonia gas), hydrogen is contained inside the formed silicon nitride film. The silicon nitride film containing hydrogen produces water due to the combination of hydrogen and oxygen, which adversely affects other elements to be protected by the silicon nitride film, so the hydrogen content in the silicon nitride film must be minimized. change. In this case, in the present invention, nitrogen and hydrogen can be almost completely decomposed by decomposing ammonia gas, which requires high energy for decomposition, twice, and there is an advantage of minimizing the hydrogen content in the silicon nitride film.

At this time, the first nozzles 215 can be arranged at equal intervals on the surface of the shower head 211 , and if necessary, the intervals of the first nozzles 215 can be adjusted for the uniformity of the insulating film formed on the substrate 232 . The second nozzles 216 are uniformly arranged in the same manner as the first nozzles 215, and may be formed unevenly if necessary. The first nozzle 215 and the second nozzle 216 are preferably arranged evenly with each other, so that the first nozzle and the second nozzle are uniformly mixed.

The following is an embodiment of a vapor deposition method for forming a vapor deposition on a substrate using a vapor deposition apparatus having both a plasma method and a heating body method according to the invention of the present application.

[Example 1]

Referring to FIG. 2 , a substrate 232 is placed on a jig of the vapor deposition apparatus of the present invention including a shower head and a heating body.

Next, the gas inside the chamber 201 is exhausted by using the vacuum pump 202 to make the vacuum degree less than or equal to 5×10 ⁻⁶ torr. The temperature of the wall of the chamber is preferably maintained at a temperature greater than or equal to 120° C., because when the temperature of the chamber is low, the evaporated material is not deposited on the substrate but deposited in the chamber. Problem spot on the wall etc.

Then, after an inert gas is injected into the first gas injection port 213 , electric power is applied to the electrode 218 to generate plasma inside the cavity 212 . At this time, since the inert gas is a gas for generating plasma, helium (He), neon (Ne), argon (Ar), or the like can be used. At this time, the flow rate of the inert gas is 1-1000 sccm. In addition, the plasma is generated by supplying and receiving RF power of 100˜3000 W from the first power source 211 .

After that, power is applied to the heating body 221 and the heating body 221 reaches a temperature greater than or equal to 1500°C.

A first gas with relatively high energy required for decomposition, ie ammonia or/and nitrogen (N ₂ ), is injected through the first gas injection port 213 . At this time, the flow rate of the ammonia gas is preferably 1-500 sccm, and the flow rate of the nitrogen gas is preferably 1-1000 sccm. At this time, the first gas injected into the first gas injection port 213 is injected into the cavity 212 of the shower head 211 where the plasma is formed for primary decomposition. The first gas decomposed by the plasma is injected into the chamber 201 through the first nozzle 215 and passed through the heating body 221, and is decomposed twice by the heating body 221 heated to a temperature greater than or equal to 1500°C. Form the first group.

Then, a second gas with relatively low energy required for decomposition, ie, silane gas, is injected through the second gas injection port 214 . At this time, the flow rate of the silane gas is preferably 1-100 sccm. The first gas injected into the second gas injection port 214 is directly sprayed toward the heating body 221 without passing through the cavity, and is completely decomposed by the heated heating body 221 to form a second group.

Afterwards, the first group and the second group react to form an evaporated film, which is evaporated on the substrate.

When forming a deposited film on a substrate by the method described in [Example 1], as shown in FIG. 4A , a first insulating film 401 can be formed on a substrate 232 .

At this time, when the silane gas is injected into the first gas injection port 213 and the gas is not injected into the second gas injection port 214 or the silane gas is also injected into the second gas injection port 214, the substrate 232 can be A silicon film is formed instead of the first insulating film 401 shown in FIG. 4A.

[Example 2]

Referring to FIG. 2 , a substrate 232 is placed on a jig of the vapor deposition apparatus of the present invention including a shower head and a heating body.

Next, the gas inside the chamber 201 is exhausted by using the vacuum pump 202 to make the vacuum degree less than or equal to 5×10 ⁻⁶ torr. The temperature of the chamber wall is preferably maintained at a temperature greater than or equal to 120° C., because when the temperature of the chamber is low, there are evaporators that are not deposited on the substrate but deposited in the chamber. Problem spot on the wall etc.

Then, after an inert gas is injected into the first gas injection port 213 , electric power is applied to the electrode 218 to generate plasma inside the cavity 212 . At this time, since the inert gas is a gas for generating plasma, helium (He), neon (Ne), argon (Ar), or the like can be used. At this time, the flow rate of the inert gas is 1-1000 sccm.

The first gas and the second gas are simultaneously injected into the first gas injection port 213, and the first gas and the second gas are decomposed by the plasma generated in the cavity, and then passed through the first nozzle. The vapor deposition film is vapor-deposited on the substrate by spraying into the chamber 201 . As described above, when the deposited film is formed on the substrate 232 after the first gas and the second gas are decomposed by plasma, the second insulating film 402 a can be formed as shown in FIG. 4B .

At this time, another method for forming the second insulating film 402a is to apply electric power to the heating body 213 to make the heating body 213 reach a temperature greater than or equal to 1500°C. Then, inject the first gas and the second gas into the second gas injection port 206 at the same time, spray into the chamber 201 through the second nozzle, and make the first gas and the second gas decomposes and reacts, and vapor-deposits the vapor-deposited film on the substrate 232 to form the second insulating film 402a.

Thereafter, the first insulating film 401 is formed by the method described in detail in [Example 1].

Then, a second insulating film 402a is formed on the first insulating film 401 by any of the methods of forming the second insulating film 402a. At this time, the first insulating film 401 and the second insulating films 402a and 402b can be vapor-deposited in various lamination sequences as needed. That is, in the present invention, the second insulating film/the first insulating film/the second insulating film are laminated, but all combinations of the first insulating film and the second insulating film may be laminated.

At this time, the difference between [Example 1] and [Example 2] is that in the case of [Example 1], the decomposition of the first gas, which requires relatively high energy for decomposition, is determined by the plasma decomposition method and thermal energy. The decomposition method is completely decomposed in two ways, and the decomposition of the second gas, which requires relatively low energy for decomposition, is only decomposed by the thermal decomposition method to form the first insulating film 401 that hardly contains hydrogen. In this case, all of the first gas and the second gas are simultaneously injected into the first gas injection port or the second gas injection port on the first insulating film 401 formed by the above-mentioned [Example 1], and then, using plasma It is decomposed by the bulk method or the heating body method, and then vapor-deposited on the second insulating films 402a and 402b.

3A and 3B are enlarged cross-sectional views of a jig of a vapor deposition device according to an embodiment of the present invention.

Referring to FIG. 3A for description, FIG. 3A is an enlarged cross-sectional view of the jig 231 in FIG. 2 , and the following structure can be seen, that is, there is a substrate 234 on which the vapor-deposited film grows, which is opposite to the surface on which the vapor-deposited film grows. The filter 234 configured above and the energy supply source 233 configured to supply energy to the vapor deposition film through the filter 234 .

Either surface of the substrate 232 is arranged facing a gas supply device such as the first nozzle part 215 and the second nozzle part 216 , and a heater 221 such as a tungsten wire is formed between the gas supply device and the substrate 232 .

An energy supply source 233 is formed on the jig 231 , and the energy supply source 233 is set in the jig 231 , or is integrated with the jig 231 or is the jig 231 itself.

A filter 234 is formed on the surface of the substrate 232 opposite to the surface on which the thin film is deposited. This filter 234 is a selective wavelength transmission filter, and the wavelength at this time is the wavelength of light.

In addition, the transmitted selective light wavelength in this embodiment is the light wavelength in the infrared and/or near-infrared region, and the transmitted selective light wavelength can be selected from other regions according to the material and purpose of the vapor-deposited film. This is the wavelength corresponding to the necessary energy generally obtained from the well-known relational expression E=hυ. In addition, at this time, it is preferable to use a selective wavelength transmission filter suitable for each purpose.

An energy supply source 233 is formed in other directions of the filter 234 , that is, in other directions of the direction where the substrate 232 is located, and supplies energy to the evaporated film through the filter 234 . The energy supply source at this time is a wavelength energy supply source.

The content corresponding to the above-mentioned filter 234 means that the wavelength is a wavelength of light, especially a wavelength of light including a wavelength in the infrared and/or near-infrared region.

In addition, the substrate 232 on which the vapor-deposited film is deposited is preferably a transparent substrate such as glass series or transparent polymer material, but it may also be an opaque substrate that does not transmit the above-mentioned target wavelength band as necessary or necessary.

Referring to FIG. 3B for illustration, the jig 231 includes: a substrate 232 on which the vapor-deposited film is grown; a mask 235 formed on the opposite side of the substrate 232 on which the vapor-deposited film is grown and composed of an open pattern 235a and a closed pattern 235b; A filter 234 disposed under the mask 235 ; and an energy supply source 233 configured to supply energy to the deposited film through the filter 234 .

The clamp 231 forms an energy supply source 233 , and the energy supply source 233 is set in the clamp 231 , or is integrated with the clamp 231 or is the clamp 231 itself.

The mask 235 is formed on the region where the vapor-deposited film is selected by the open pattern 235a and the closed pattern 235b, and then accurately formed on the selected region in the lateral direction, and energy is supplied only to the region of the vapor-deposited film. .

In addition, the mask 235 is composed of an open pattern 235a and a closed pattern 235b, which are light-shielding patterns and light-transmitting patterns, respectively.

The above-mentioned content consistent with the filter 234 means that the wavelength is a wavelength of light, especially a wavelength including infrared and/or near-infrared regions.

In this case, FIG. 3B shows a structure in which the mask 235 is closely attached to the substrate 232 , but the mask 235 may be formed between the filter 234 and the energy supply source 233 .

In addition, although the filter is comprised including the mask 235, the mask 235 and the filter 234 may be integrally comprised. In other words, a pattern having a function equivalent to that of the open pattern 235 a and the closed pattern 235 b of the mask 235 may be formed on the filter 234 , and the pattern in this case is a light-transmitting pattern.

A method of vapor-depositing a silicon layer after introducing the jig 231 shown in FIGS. 3A and 3B into the vapor deposition apparatus of FIG. 2 will be described.

The vapor deposition method using the energy supply source 233 of the jig 231 is a vacuum vapor deposition consisting of a step of evacuating the inside of the chamber to a vacuum and a step of vapor-depositing the vapor deposition film after evacuating the inside of the chamber to a vacuum. In the process, an energy supply step of supplying wavelength-selective energy to the vapor-deposition film to the vapor-deposition film is included.

After the inside of the chamber is evacuated to a vacuum by the vacuum pump 202, a vapor-deposited film vapor-deposition step is performed.

At this time, the energy supply source 233 supplies energy to the vapor deposition film during the vapor deposition film deposition step. In such a case, by supplying the enthalpy required for phase transition of the vapor-deposited film from amorphous to crystallized to each layer (layer) on which the vapor-deposited film is vapor-deposited, it is possible to improve the degree of crystallinity. Vapor deposition is carried out in the state. At this time, the intensity of the supplied energy is determined by the vapor deposition rate of the thin film and the physical properties of the vapor deposition film material.

The energy supply source 233 can supply energy to the thin film after the evaporation process of the evaporated film is completed. At this time, a thermal annealing effect is imparted to the vapor-deposited film.

In addition, the energy supply source 233 is provided before vapor-depositing the vapor-deposited film, and can impart a preheating effect to the surface of the substrate.

The energy supply stage performed by the energy supply source 233 includes: a stage of emitting wavelength energy from the energy supply source 233; ; the stage in which the selected wavelength energy transmits the substrate 232 ; the stage in which the selected wavelength energy that transmits the substrate 232 is supplied to the evaporated film.

The stage of supplying the selected wavelength energy of the transmissive substrate 232 to the vapor deposition film may be performed up to the growth point, the middle point, or the upper part of the vapor deposition film according to the intensity of the selected wavelength energy. any part of .

The present invention exemplifies the above-mentioned preferred embodiments for illustration, but is not limited to the embodiments. Within the scope of not departing from the spirit of the present invention, those skilled in the art to which the present invention belongs can carry out various Changes and Modifications.

Claims (69)

1. An evaporation device, characterized in that, comprising: The substrate on which the vapor-deposited film is grown; a filter formed on the opposite side of the film-forming side of the substrate; and An energy supply source configured to supply energy to the vapor deposition film via the filter. 2. The vapor deposition apparatus according to claim 1, wherein the energy supply source is a wavelength energy supply source. 3. The vapor deposition device according to claim 2, wherein the wavelength energy is optical wavelength energy. 4. The vapor deposition apparatus according to claim 3, wherein the light wavelength energy is a light wavelength including wavelengths in infrared and/or near-infrared regions. 5. The vapor deposition apparatus according to claim 1, wherein the filter is a selective wavelength transmission filter. 6. The vapor deposition apparatus according to claim 5, wherein the selective wavelength is a wavelength of light. 7 . The vapor deposition apparatus according to claim 6 , wherein the wavelength of selective light transmitted through the selective wavelength transmission filter is in the infrared and/or near-infrared region. 8 . 8 . The vapor deposition apparatus according to claim 1 , further comprising a mask formed with a pattern so that energy can be supplied to a selective region of the vapor deposition film. 9. The vapor deposition device according to claim 8, wherein the mask is a light-shielding mask, and the pattern formed on the mask is a light-transmitting pattern. 10. The vapor deposition device according to claim 9, wherein the mask formed with the pattern is located between the substrate and the filter and/or between the filter and the energy supply source between. 11. The vapor deposition apparatus according to claim 1, wherein the filter is a patterned filter. 12. The vapor deposition device according to claim 11, wherein the pattern formed on the filter is a light-transmitting pattern. 13. The vapor deposition device according to claim 1, wherein the vapor deposition film is a thin film of silicon or a silicon compound. 14. The vapor deposition apparatus according to claim 1, wherein the substrate is a transparent substrate. 15. The vapor deposition apparatus according to claim 14, wherein the transparent substrate is glass. 16. The vapor deposition device according to claim 14, wherein the transparent substrate is a transparent polymer material. 17. An evaporation device, characterized in that it comprises: Chamber; a spray head located in a defined area inside the chamber; Corresponding to the shower head, a fixture with a substrate on the surface; and a heating body located between the nozzle and the fixture, The nozzles include: a first gas injection port and a second gas injection port; a cavity inside the shower head connected to the first gas injection port; a plurality of first nozzles located on the surface of the spray head corresponding to the fixture in conjunction with the cavity; and Connected with the second gas injection port, a plurality of second nozzles located on the surface of the shower head corresponding to the fixture. 18. The vapor deposition device according to claim 17, wherein an electrode connected to an external first power source is further provided on one side surface of the cavity. 19. The vapor deposition apparatus according to claim 18, wherein the electrode generates plasma inside the cavity by power supplied from the first power supply. 20. The vapor deposition apparatus according to claim 17, wherein the first gas injection port is a gas injection port for injecting a first gas whose decomposition energy is higher than that of the second gas. 21. The vapor deposition apparatus according to claim 17, wherein the second gas injection port is a gas injection port for injecting a second gas whose decomposition energy is lower than that of the first gas. 22. The vapor deposition device according to claim 20 or 21, wherein the first gas is ammonia or nitrogen, and the second gas is silane gas. 23. The vapor deposition apparatus according to claim 17, wherein a second power source is connected to the heating body. 24. The vapor deposition apparatus according to claim 17, wherein the heating body is made of tungsten. 25. The vapor deposition device according to claim 17, wherein the heating body is a filament. 26. The vapor deposition device according to claim 17, wherein the heating body is heated to a temperature greater than or equal to 1000 degrees. 27. The vapor deposition device according to claim 17, wherein the vapor deposition device is a device for vapor deposition of a silicon nitride film. 28. The vapor deposition device according to claim 17, wherein the interior of the cavity is a plasma region. 29. The vapor deposition device according to claim 17, wherein the first nozzles are evenly distributed on the surface of the spray head corresponding to the fixture. 30. The vapor deposition device according to claim 17, wherein the second nozzles are evenly distributed on the surface of the spray head corresponding to the fixture. 31. The evaporation device according to claim 17, wherein the first nozzle and the second nozzle are evenly distributed on the surface of the spray head corresponding to the fixture. 32. The vapor deposition apparatus according to claim 17, wherein the gas injected into the first gas injection port is decomposed by plasma and a heating body. 33. The vapor deposition apparatus according to claim 17, wherein the gas injected into the second gas injection port is decomposed by a heating body. 34. An evaporation device, characterized in that it comprises: Chamber; a spray head located in a defined area inside the chamber; Corresponding to the shower head, a substrate and a filter located under the substrate are installed on the surface to form a fixture for an energy supply source that supplies energy to the substrate; and a heating body located between the nozzle and the fixture, The nozzles include: a first gas injection port and a second gas injection port; a cavity inside the shower head connected to the first gas injection port; a plurality of first nozzles located on the surface of the spray head corresponding to the fixture in conjunction with the cavity; and Connected with the second gas injection port, a plurality of second nozzles located on the surface of the shower head corresponding to the fixture. 35. The vapor deposition apparatus according to claim 34, wherein the light wavelength energy is light wavelength energy including wavelengths in infrared and/or near-infrared regions. 36. The vapor deposition apparatus of claim 34, wherein the filter is a selective wavelength transmission filter. 37. The vapor deposition apparatus according to claim 34, further comprising a mask formed with a pattern so that energy can be supplied to a selective region of the vapor deposition film. 38. The vapor deposition device according to claim 37, wherein the mask is a light-shielding mask, and the pattern formed on the mask is a light-transmitting pattern. 39. The vapor deposition apparatus according to claim 37, further comprising an electrode connected to an external first power supply on one surface inside the cavity. 40. The vapor deposition device according to claim 34, wherein the electrode is a device for generating plasma inside the cavity by power applied from the first power source. 41. The vapor deposition apparatus according to claim 34, wherein the first gas injection port is a gas injection port for injecting a first gas whose decomposition energy is higher than that of the second gas. 42. The vapor deposition apparatus according to claim 34, wherein the second gas injection port is a gas injection port for injecting a second gas whose decomposition energy is lower than that of the first gas. 43. The vapor deposition device according to claim 41 or 42, wherein the first gas is ammonia or nitrogen, and the second gas is silane gas. 44. The vapor deposition apparatus according to claim 34, wherein a second power source is connected to the heating body. 45. The vapor deposition apparatus according to claim 34, wherein the heating body is made of tungsten. 46. The vapor deposition device according to claim 34, wherein the heating body is a filament. 47. The vapor deposition device according to claim 34, wherein the interior of the cavity is a plasma region. 48. A vapor deposition method, characterized in that, in a vacuum vapor deposition process consisting of a step of evacuating the inside of a chamber to a vacuum and a step of vapor-depositing a vapor-deposited film after evacuating the inside of the chamber to a vacuum , having an energy supply stage for supplying wavelength-selective energy to the vapor deposition film to the vapor deposition film. 49. The vapor deposition method according to claim 48, wherein the energy supply stage is performed during vapor deposition of the vapor deposition film. 50. The vapor deposition method according to claim 48, wherein the energy supply stage is performed after the vapor deposition of the vapor deposition film is completed. 51. The vapor deposition method according to claim 48, wherein the energy supply stage is performed before vapor deposition of the vapor deposition film, so as to give a preheating effect to the surface of the substrate. 52. The vapor deposition method according to claim 48, wherein the energy supply stage consists of the following stages: The stage of emitting wavelength energy from the energy supply source; A stage in which the emitted wavelength energy passes through a selective wavelength transmission filter to filter wavelength energy other than the selected wavelength; the stage of the selected wavelength energy transmissive substrate; and The step of supplying the energy of the selected wavelength of the transmissive substrate to the vapor deposition film. 53. The vapor deposition method according to claim 52, wherein the stage of supplying the selected wavelength energy of the transmissive substrate to the vapor deposition film is continuously supplied to the selected wavelength energy according to the intensity of the selected wavelength energy. The growth point of the vapor-deposited film, the middle point, or any part of the upper part of the vapor-deposited film. 54. An evaporation method, characterized in that it comprises: The stage where the substrate is placed inside the chamber having the plasma generation area and the heating body; a stage of supplying a first gas and a second gas to the chamber; The first gas passes through the plasma generation region and the heating body to form a first group, and the second gas passes through the heating body to form a second group; A step in which the first group reacts with the second group to form a vapor-deposited film on the substrate. 55. The vapor deposition method according to claim 54, further comprising injecting gas into the plasma generation region during the stage of placing the substrate and the stage of supplying the first gas and the second gas. The stage in which plasma is formed by inert gas and electric power is applied. 56. The vapor deposition method according to claim 54, further comprising supplying electric power to the heating body and stage of heating. 57. The vapor deposition method according to claim 54, wherein, when the substrate is placed inside the chamber, the first gas and the second gas form the first group and the second group respectively. Before the step, a step of passing the first gas and the second gas through the plasma generating region or the heating body region to form another deposited film on the substrate is also included. 58. The vapor deposition method according to claim 54, characterized in that, after the stage in which the first group reacts with the second group to form a vapor deposition film on the substrate, the plasma A step where the generation region or the heater region passes the first gas and the second gas to form another vapor deposition film on the substrate. 59. The vapor deposition method according to claim 57 or 58, wherein the other vapor deposition film is a vapor deposition film containing hydrogen. 60. A vapor deposition method, comprising: The stage where the substrate is placed inside the chamber having the plasma generation area and the heating body; a stage of supplying a first gas and a second gas to the chamber; The first gas passes through the plasma generation region and the heating body to form a first group, and the second gas passes through the heating body to form a second group; A stage in which the first group and the second group react to form a vapor deposition film on the substrate, and supply wavelength-selective energy to the vapor deposition film to the vapor deposition film. 61. The vapor deposition method according to claim 60, wherein the energy supply stage is performed during vapor deposition of the vapor deposition film. 62. The vapor deposition method according to claim 60, wherein the energy supply stage is performed after the vapor deposition of the vapor deposition film is completed. 63. The evaporation method according to claim 60, wherein the energy supply stage is performed before evaporating the evaporation film, so as to provide a preheating effect on the surface of the substrate. 64. The vapor deposition method according to claim 60, wherein the energy supply stage consists of the following stages: The stage of emitting wavelength energy from the energy supply source; a stage of filtering wavelength energy other than wavelengths selected from said emitted wavelength energy via a selective wavelength transmission filter; the stage of the selected wavelength energy transmissive substrate; and The step of supplying the energy of the selected wavelength of the transmissive substrate to the vapor deposition film. 65. The vapor deposition method according to claim 64, wherein the stage of supplying the selected wavelength energy of the transmissive substrate to the vapor deposition film is continuously supplied to the selected wavelength energy according to the intensity of the selected wavelength energy. The growth point of the vapor-deposited film, the middle point, or any part of the upper part of the vapor-deposited film. 66. The vapor deposition method according to claim 60, further comprising injecting gas into the plasma generation region during the stage of placing the substrate and the stage of supplying the first gas and the second gas. The stage in which plasma is formed by inert gas and electric power is applied. 67. The vapor deposition method according to claim 60, further comprising supplying electric power to the heating body and stage of heating. 68. The vapor deposition method according to claim 60, wherein when the substrate is placed inside the chamber, the first gas and the second gas respectively form the first group and the second group Before the step, a step of passing the first gas and the second gas through the plasma generating region or the heating body region to form another deposited film on the substrate is also included. 69. The vapor deposition method according to claim 60, characterized in that, after the stage in which the first group reacts with the second group to form a vapor deposition film on the substrate, the plasma A step where the generation region or the heater region passes the first gas and the second gas to form another vapor deposition film on the substrate.

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