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CN1762184A - Near-end crosstalk compensation at multi-stages - Google Patents

Near-end crosstalk compensation at multi-stages Download PDF

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CN1762184A
CN1762184A CN 200480007483 CN200480007483A CN1762184A CN 1762184 A CN1762184 A CN 1762184A CN 200480007483 CN200480007483 CN 200480007483 CN 200480007483 A CN200480007483 A CN 200480007483A CN 1762184 A CN1762184 A CN 1762184A
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pcb
capacitor
substrate
connector
chip
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CN100484364C (en
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鲁克·阿德里思
阿米德·哈西姆
特洛伊·朗
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Commscope Inc of North Carolina
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Commscope Solutions Properties LLC
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Abstract

A connector is provided for simultaneously improving both the NEXT high frequency performance when low crosstalk plugs are used and the NEXT low frequency performance when high crosstalk plugs are used. The connector includes PCB substrates made of materials having different dielectric frequency characteristics.

Description

多级近端串音补偿Multi-level near-end crosstalk compensation

本申请要求对于2003年3月21日提交的美国临时申请号60/456236的优先权,其全部内容通过引用而结合在本文中。This application claims priority to US Provisional Application No. 60/456,236, filed March 21, 2003, the entire contents of which are incorporated herein by reference.

                              技术领域Technical field

本发明涉及在通讯连接器中的近端串音(NEXT)补偿,更具体地说,涉及使用诸如由不同介电常数材料组成的印刷电路板(PCB)的基片消除或减少NEXT的技术。The present invention relates to near-end crosstalk (NEXT) compensation in communication connectors, and more particularly to techniques for eliminating or reducing NEXT using substrates such as printed circuit boards (PCBs) composed of different dielectric constant materials.

                              背景技术 Background technique

在连接器中导体之间的噪声或讯号干扰被称为串音。串音在使用连接器的通讯装置中是一个常见的难题。尤其是,在经常用于计算机的模数插头与模数插口紧密配合的通讯系统中,插口和/或插头内部的导电线(导体)引起近端串音(NEXT),即,在短距离中位置接近的导电线上的串音。一个插头,由于它的结构或电缆终止于该插头的形式可以产生高串音或低串音。有高串音的插头在本文中被称为高串音插头,而有低串音的插头在本文被称为低串音插头。Noise or signal interference between conductors in a connector is known as crosstalk. Crosstalk is a common problem in communication devices using connectors. In particular, in communication systems where an analog-to-digital plug, often used in computers, mates closely with an analog-to-digital jack, the conductive wires (conductors) inside the jack and/or plug cause near-end crosstalk (NEXT), i.e., in short distances Crosstalk on closely located conductive wires. A plug that can produce high or low crosstalk due to its construction or the way the cable terminates in the plug. Plugs with high crosstalk are referred to herein as high crosstalk plugs, while plugs with low crosstalk are referred to herein as low crosstalk plugs.

授予Adriaenssens等人的美国专利号5997358(以下称为“‘358专利”)描述了一个用于补偿这种NEXT的二级模式。‘358专利的全部内容通过引用而结合在本文中。更进一步,美国专利号5915989;6042427;6050843;和6270381的主题内容也通过引用而结合在本文中。US Patent No. 5,997,358 to Adriaenssens et al. (hereinafter the "'358 patent") describes a secondary mode for compensating for this NEXT. The entire contents of the '358 patent are incorporated herein by reference. Further, the subject matter of US Patent Nos. 5,915,989; 6,042,427; 6,050,843; and 6,270,381 are also incorporated herein by reference.

‘358专利通常通过以两级在插口中添加合成的或人工的串音减少模数插头的导电线对之间的NEXT(最初串音),因而消除串音或者降低插头插口组合的总串音。合成的串音在本文被称为补偿串音。这个方法一般通过将连接器内部一个导体的线路和连接器内部另一导体的线路交叉两次,由此提供两级NEXT补偿。这个模式在减少NEXT方面比单级添加补偿的模式更有效率,尤其在除了在一定的延时之后以外补偿不能被引入的通常情况下更是如此。The '358 patent generally reduces NEXT (initial crosstalk) between conductive wire pairs of an analog-to-digital plug by adding synthetic or artificial crosstalk in the jack in two stages, thus eliminating crosstalk or reducing the overall crosstalk of the plug-and-socket combination . The resulting crosstalk is referred to herein as compensating crosstalk. This method typically provides two levels of NEXT compensation by crossing the line of one conductor inside the connector twice with the line of the other conductor inside the connector. This mode is more efficient in reducing NEXT than the mode of adding compensation in a single stage, especially in the usual case where compensation cannot be introduced except after a certain delay.

尽管有效,但是‘358专利的NEXT补偿方案具有一个缺点,也就是,和电讯工业协会(TIA)极限线相关的NEXT容限当高串音插头被用于插口时在低频率(低于大约100MHz)上变坏,且当低串音插头被用于插口时在高频率(超过大约250MHz)上变坏。更具体地说,当在二级补偿的插孔中的净补偿串音少于初始串音(即,当高串音插头被插入插孔中)时,插头插孔组合被认为补偿不足,而且在零位设置在通过级间延迟和补偿级的大小所确定的频率点上之前,结果的NEXT频率特性在低频率上将达到峰值。在此情况下,和TIA极限线相关的NEXT容限在低频率上最差。另一方面,当在这个插口中的净补偿串音高于初始串音(即,当低串音插头被插入时)时,插头插口组合被认为补偿过度,而且结果的NEXT频率特性将没有零位,而NEXT频率特性的斜率在很高频率上将逐渐地向着60dB/十进位增加,远远超过TIA的20dB/十进位的极限斜率。在此情况下,和TIA极限线相关的NEXT容限在高频率上最差。Although effective, the NEXT compensation scheme of the '358 patent has a disadvantage, namely, the NEXT tolerance associated with the Telecommunications Industry Association (TIA) limit line at low frequencies (below about 100 MHz) when high crosstalk plugs are used for jacks. ) and worse at high frequencies (over about 250MHz) when low crosstalk plugs are used in jacks. More specifically, a plug-jack combination is considered undercompensated when the net compensated crosstalk in the secondary compensated jack is less than the initial crosstalk (i.e., when a high crosstalk plug is inserted into the jack), and The resulting NEXT frequency characteristic will peak at low frequencies before the null is set at a frequency determined by the interstage delay and the size of the compensation stage. In this case, the NEXT tolerance relative to the TIA limit line is worst at low frequencies. On the other hand, when the net compensated crosstalk in this jack is higher than the initial crosstalk (i.e., when a low crosstalk plug is inserted), the plug-socket combination is considered overcompensated, and the resulting NEXT frequency characteristic will not have zero bit, and the slope of the NEXT frequency characteristic will gradually increase towards 60dB/decade at very high frequencies, far exceeding the limit slope of 20dB/decade of TIA. In this case, the NEXT tolerance relative to the TIA limit line is worst at high frequencies.

因而,尽管在高串音插头被用于插口时低频容限(连接器的低频特性)可以通过增加补偿水平提高,但是当低串音插头被用于插口时这种行为会导致高频容限进一步变坏。相反地,尽管在低串音插头被用于插口时高频容限可以通过降低补偿水平提高,但是当高串音插头被用于插口时这种行为会导致低频容限进一步变坏。Thus, while low frequency tolerance (low frequency characteristics of the connector) can be improved by increasing the level of compensation when high crosstalk plugs are used in jacks, this behavior causes further deterioration in high frequency tolerance when low crosstalk plugs are used in jacks. bad. Conversely, although high frequency tolerance can be improved by reducing the compensation level when low crosstalk plugs are used in jacks, this behavior leads to further degradation of low frequency tolerance when high crosstalk plugs are used in jacks.

因此就存在一种技术需求,该技术能同时降低或消除当低串音插头被使用时在诸如250MHz或之上的高频率,以及当高串音插头被使用时在诸如100MHz或之下的低频率上的NEXT。Therefore, there is a need for a technology that can simultaneously reduce or eliminate high frequencies such as 250MHz or above when low crosstalk plugs are used, and low frequency frequencies such as 100MHz or below when high crosstalk plugs are used. NEXT on frequency.

                              发明内容Contents of Invention

本发明克服了减少连接器中的NEXT的相关技术的难题和局限性。具体地说,本发明提供了一种装置和方法,通过用具有不同电介质频率特性的材料制造多级补偿系统的不同的基片,同时提高使用低串音插头时的NEXT高频性能和使用高串音插头时的NEXT低频性能。因此,本发明既提高了模数输出和面板的低频(例如,1-100MHz)串音性能又提高了高频(例如,250-500MHz;或500MHz和更高)串音性能。The present invention overcomes the difficulties and limitations of the related art of reducing NEXT in connectors. Specifically, the present invention provides an apparatus and method for simultaneously improving NEXT high frequency performance when using low crosstalk plugs and using high NEXT low frequency performance with crosstalk plugs. Thus, the present invention improves both low frequency (eg, 1-100 MHz) and high frequency (eg, 250-500 MHz; or 500 MHz and higher) crosstalk performance of the analog-to-digital output and panel.

                              附图说明Description of drawings

通过参考附图从本发明的实施例的下列详细描述中,本发明的各个方面将变得显而易见,其中:Aspects of the invention will become apparent from the following detailed description of the embodiments of the invention with reference to the accompanying drawings, in which:

图1(a)是根据本发明的第一实施例的连接器的侧视图;Fig. 1 (a) is the side view of the connector according to the first embodiment of the present invention;

图1(b)是根据本发明的第一实施例的图1(a)的印刷电路板和补偿电容器的俯视平面图;Figure 1(b) is a top plan view of the printed circuit board and compensation capacitor of Figure 1(a) according to a first embodiment of the present invention;

图2是根据本发明的第二实施例的连接器的印刷电路板和补偿电容器的俯视平面图;2 is a top plan view of a printed circuit board and a compensation capacitor of a connector according to a second embodiment of the present invention;

图3(a)是根据本发明的第三实施例的连接器的印刷电路板的侧视图;Fig. 3 (a) is the side view of the printed circuit board of the connector according to the third embodiment of the present invention;

图3(b)是根据本发明的第三实施例的图3(a)的印刷电路板和补偿电容器的俯视平面图;Figure 3(b) is a top plan view of the printed circuit board and compensation capacitor of Figure 3(a) according to a third embodiment of the present invention;

图4(a)是根据本发明的第四实施例的连接器的印刷电路板的侧视图;Fig. 4 (a) is the side view of the printed circuit board of the connector according to the 4th embodiment of the present invention;

图4(b)是根据本发明的第四实施例的图4(a)的印刷电路板和补偿电容器的俯视平面图;和Figure 4(b) is a top plan view of the printed circuit board and compensation capacitor of Figure 4(a) according to a fourth embodiment of the present invention; and

图5是根据本发明的第五实施例的连接器的侧视图。Fig. 5 is a side view of a connector according to a fifth embodiment of the present invention.

                              具体实施方式 Detailed ways

现在将详细参考本发明的优选实施例说明附图中的实例。在本申请中,“级”是指进行在补偿延迟点上发生的补偿的地点。The examples shown in the drawings will now be described in detail with reference to the preferred embodiments of the present invention. In this application, "level" refers to the location where the compensation occurs at the compensation delay point.

本发明提供了多种结构的印刷电路板(PCB),该结构的印刷电路板可以代替‘358专利中图7A的印刷线路板。在一些实施例中,本发明的PCB通过层叠多个具有不同介电常数(DK)的基片而构成。The present invention provides printed circuit boards (PCBs) of various configurations that can replace the printed circuit board of Figure 7A of the '358 patent. In some embodiments, the PCB of the present invention is constructed by laminating a plurality of substrates with different dielectric constants (DK).

根据本发明的第一实施例,图1(a)是连接器的侧视图,图1(b)是图1(a)的印刷电路板和补偿电容器的俯视平面图。According to the first embodiment of the present invention, FIG. 1( a ) is a side view of the connector, and FIG. 1( b ) is a top plan view of the printed circuit board and compensation capacitor of FIG. 1( a ).

参考图1(a)和1(b),连接器包括具有跨接线14的触点30和混合PCB10,在该处插头20与连接器紧密配合。插头20可以是模数插头,诸如用于电话线或将个人计算机连接到墙上输出插座的接插线的末端的插头。触点30可以被焊接或被压入适配到位于PCB10的适当位置上的电镀通孔中并且可以是弹簧导线触点。此外,触点30具有载流部分30b和非载流部分30a,在图1(a)中标示出这些部分30a和30b之间的分界线BD。触点30和PCB10可以被安置在诸如模数插口的外壳中,当插头20进入插口时,使插头20上的电触点经由触点30和PCB10上的电触点紧密配合。Referring to Figures 1(a) and 1(b), the connector includes contacts 30 with jumpers 14 and a hybrid PCB 10 where the plug 20 is mated with the connector. Plug 20 may be a modular plug, such as the plug used on the end of a telephone line or patch cord that connects a personal computer to a wall outlet. The contacts 30 may be soldered or press fit into plated through holes in place on the PCB 10 and may be spring wire contacts. Furthermore, the contact 30 has a current-carrying portion 30b and a non-current-carrying portion 30a, the boundary BD between these portions 30a and 30b being indicated in FIG. 1(a). Contacts 30 and PCB 10 may be housed in a housing such as an analog-to-digital jack such that the electrical contacts on plug 20 mate via contacts 30 and electrical contacts on PCB 10 when plug 20 enters the jack.

根据第一实施例的PCB10由交替层叠的五个基片(S1-S5)和六个金属化层(ML1-ML6)组成。更具体地,基片和金属化层以下列顺序(从上到下)层叠:ML1、S1、ML2、S2、ML3、S3、ML4、S4、ML5、S5和ML6。第一基片S1、第二基片S2和第三基片S3的一半/部分由具有低斜率DK(即,介电常数相对于频率的下降率低)的材料制成。介电常数是众所周知的用于描述材料储存静电能量的能力的术语。第三基片S3的另一半/部分、第四基片S4和第五基片S5由具有高斜率DK(即,介电常数相对于频率的下降率高)的材料制成。基片S1-S5的两个不同DK材料的使用通过阴影线的存在和不存在表示。The PCB 10 according to the first embodiment consists of five substrates (S1-S5) and six metallization layers (ML1-ML6) stacked alternately. More specifically, the substrate and metallization layers are stacked in the following order (from top to bottom): ML1, S1, ML2, S2, ML3, S3, ML4, S4, ML5, S5, and ML6. Half/part of the first substrate S1, the second substrate S2, and the third substrate S3 are made of a material having a low slope DK (ie, a low rate of decrease in dielectric constant with respect to frequency). Dielectric constant is a well-known term used to describe a material's ability to store electrostatic energy. The other half/part of the third substrate S3, the fourth substrate S4 and the fifth substrate S5 are made of a material having a high slope DK (ie, a high drop rate of the dielectric constant with respect to frequency). The use of two different DK materials for substrates S1-S5 is indicated by the presence and absence of hatching.

金属化层ML1-ML6分别表示形成在基片表面上的金属化的导电图形,该基片直接处于相应金属化层的下方。在图1(b)中,具有如图1(a)所示的跨接线14的触点30被表示为例如导电线对12,并且被显示为形成在第一金属化层ML1上。作为第一级补偿电容器的交叉指型电容器40a和40b被分别形成在第四和第五金属化层ML4和ML5上或作为它们的一部分。作为第二级补偿电容器的交叉指型电容器42a和42b被分别形成在第二和第三金属化层ML2和ML3上或作为它们的一部分。交叉指型电容器是具有两个各自在不同电势上的互相啮合的金属梳的同平面排列的电容器,且已为人所知。Metallization layers ML1-ML6 respectively represent conductive patterns of metallization formed on the surface of the substrate directly below the corresponding metallization layer. In FIG. 1( b ), contacts 30 having jumper lines 14 as shown in FIG. 1( a ) are represented as, for example, conductive line pairs 12 and are shown formed on the first metallization layer ML1 . Interdigital capacitors 40a and 40b as first stage compensation capacitors are formed on or as part of the fourth and fifth metallization layers ML4 and ML5, respectively. Interdigitated capacitors 42a and 42b as second stage compensation capacitors are formed on or as part of the second and third metallization layers ML2 and ML3, respectively. Interdigitated capacitors are capacitors having two coplanar arrays of intermeshing metal combs, each at a different potential, and are known.

在此实施例中,电容器40a和40b被复制在层ML4和ML5上,且电容器42a和42b被复制在层ML2和ML3上。在本申请中,和补偿电容器相关的“复制”意思是完全相同地复制在全部指定的金属化层上。换句话说,电容器40a将具有与电容器40b完全相同的形状和尺寸,且与电容器40b垂直对齐。同样地,电容器42a将具有与电容器42b完全相同的形状和尺寸,且与电容器42b垂直对齐。复制交叉指型电容器的理由是为了增加电容量而不必增加足迹(表面覆盖度)。也可以用更大足迹的交叉指型电容器而不需要这样的复制。另一方面,如果印刷电路板被构造成有更多的金属化层,那么交叉指型电容器可以被复制在多于两个的金属化层上,如果需要可制得更小的足迹。In this embodiment, capacitors 40a and 40b are replicated on layers ML4 and ML5, and capacitors 42a and 42b are replicated on layers ML2 and ML3. In this application, "replication" in relation to compensation capacitors means identical replication on all specified metallization layers. In other words, capacitor 40a will have exactly the same shape and size as capacitor 40b, and be vertically aligned with capacitor 40b. Likewise, capacitor 42a will have exactly the same shape and size as capacitor 42b, and be vertically aligned with capacitor 42b. The reason for replicating interdigitated capacitors is to increase capacitance without having to increase footprint (surface coverage). Larger footprint interdigitated capacitors can also be used without such duplication. On the other hand, if the printed circuit board is constructed with more metallization layers, then the interdigitated capacitors can be replicated on more than two metallization layers, resulting in a smaller footprint if desired.

根据本发明,用于基片的不同DK材料的使用以及金属化层的交叉指型电容器和跨接线导电线对的使用能够减少由插头20所引入的如果插头20是低串音插头时在高频率,以及如果插头20是高串音插头时在低频率上的NEXT。工作如何进行的解释如下。According to the present invention, the use of different DK materials for the substrate and the use of interdigitated capacitors for the metallization layers and the use of jumper conductive wire pairs can reduce the noise introduced by the plug 20 if the plug 20 is a low crosstalk plug at high frequency, and NEXT at low frequencies if plug 20 is a high crosstalk plug. How this works is explained below.

NEXT被归因于两个因素:电容耦合和电感耦合。两条导电线的紧密接近引起电容耦合,而流过这些导电线的电流引起电感耦合。因而,插头20在其与触点30紧密配合时引入了电容耦合和电感耦合,并因此产生NEXT。NEXT is attributed to two factors: capacitive coupling and inductive coupling. The close proximity of two conductive wires causes capacitive coupling, while the current flowing through these conductive wires causes inductive coupling. Thus, the plug 20 introduces both capacitive and inductive coupling as it mates closely with the contacts 30, and thus NEXT.

为了减少或补偿由电感耦合引起的NEXT,导电线对12(触点30)具有跨接线14。这已经在‘358专利中已知和公开揭示。In order to reduce or compensate for NEXT caused by inductive coupling, the conductive wire pair 12 (contact 30 ) has a jumper 14 . This is already known and publicly disclosed in the '358 patent.

为了减少或补偿由电容耦合引起的NEXT,PCB10包括两级的电容补偿因子。在图1(a)和1(b)中,第一级处在从初始串音开始的最小延迟之处,该处处于PCB10的一部分上,在该部分上第一级经由触点30的非载流部分30a被直接电连接到插头20的触点截取触点30的地方。第二级处在从第一级开始的某些延迟之处,该处处于PCB10的一部分上,该部分从插头20的触点截取触点30的地方经由触点30的载流部分30b移开。In order to reduce or compensate NEXT caused by capacitive coupling, PCB 10 includes two levels of capacitive compensation factors. In FIGS. 1( a ) and 1 ( b ), the first stage is at the point of minimum delay from initial crosstalk on the portion of the PCB 10 where the first stage The current carrying portion 30a is electrically connected directly to the contacts of the plug 20 where the contacts intercept the contacts 30 . The second stage is at some delay from the first stage on a portion of the PCB 10 that is removed from where the contacts of the plug 20 intercept the contacts 30 via the current carrying portion 30b of the contacts 30 .

在本发明的多个实施例中,交叉指型或平行板型电容器被置于第一级的与高斜率DK材料制成的基片结合的金属化层上。平行板电容器是由两个在不同电势上的平行金属板组成的电容器,并且是已知的电容器。在第二级中,交叉指型或平行板型电容器被置于与低斜率DK材料制成的基片结合的金属化层上。例如,在第一实施例中,由于基片S4和S5由高斜率DK材料制成,因而交叉指型电容器40a和40b被分别置于第一级区域的金属化层ML4和ML5上。同样由于基片S1和S2由低斜率DK材料制成,因而交叉指型电容器42a和42b被分别置于第二级区域的金属化层ML2和ML3上。In various embodiments of the invention, interdigitated or parallel plate capacitors are placed on the metallization layer of the first level bonded to the substrate made of high slope DK material. A parallel plate capacitor is a capacitor consisting of two parallel metal plates at different potentials and is known as a capacitor. In the second stage, interdigitated or parallel-plate capacitors are placed on metallization layers bonded to a substrate made of low-slope DK material. For example, in the first embodiment, since substrates S4 and S5 are made of high-slope DK material, interdigitated capacitors 40a and 40b are respectively placed on metallization layers ML4 and ML5 in the first level region. Also because substrates S1 and S2 are made of low slope DK material, interdigitated capacitors 42a and 42b are placed on metallization layers ML2 and ML3, respectively, in the second level region.

在本发明中,通过在具有高DK斜率的PCB基片中安置第一级交叉指型电容器(或其它类型的电容器)使第一级电容耦合的大小随着频率下降。另一方面,通过在具有低DK斜率的PCB基片中安置第二级交叉指型电容器(或其它类型的电容器)而使第二级电容耦合随频率相对平坦。结果,由第一级补偿串音减去第二级补偿串音组成的连接器的净补偿串音(合成串音)随着频率(即,随着频率的增加)下降。换句话说,净补偿串音取决于频率可变,使得本发明在高频提供了低水平的补偿串音从而使连接器中串音的补偿过度最小化,而在低频提供了高水平的补偿串音从而使连接器中的串音补偿不足最小化。通过在高频提供低水平的补偿串音,本发明提高了低串音插头被插入插口时连接器的高频容限。另一方面,通过在低频提供高水平的补偿串音,本发明提高了高串音插头被插进插口时连接器的低频容限。In the present invention, the magnitude of the first-stage capacitive coupling decreases with frequency by placing the first-stage interdigitated capacitors (or other types of capacitors) in the PCB substrate with a high DK slope. On the other hand, the second stage capacitive coupling is made relatively flat with frequency by placing the second stage interdigitated capacitors (or other types of capacitors) in the PCB substrate with a low DK slope. As a result, the net compensating crosstalk (composite crosstalk) of a connector consisting of the first level compensating crosstalk minus the second level compensating crosstalk decreases with frequency (ie, with increasing frequency). In other words, the net compensated crosstalk is variable depending on frequency such that the present invention provides low levels of compensated crosstalk at high frequencies to minimize overcompensation of crosstalk in the connector, and high levels of compensation at low frequencies. Crosstalk thereby minimizing insufficient crosstalk compensation in the connector. By providing low levels of compensating crosstalk at high frequencies, the present invention improves the high frequency tolerance of the connector when a low crosstalk plug is inserted into the jack. On the other hand, the present invention improves the low frequency tolerance of the connector when a high crosstalk plug is inserted into the jack by providing a high level of compensated crosstalk at low frequencies.

图2是根据本发明的第二实施例的图1(a)的印刷电路板和补偿电容器的俯视平面图。除了使用不同类型的补偿电容器外第二实施例和第一实施例完全相同。即,第一级补偿电容器使用平行板电容器46a和46b实现,第二级补偿电容器使用平行板电容器48a和48b实现。平行板电容器46a和46b分别形成在图1(a)的金属化层ML4和ML5上,且平行板电容器48a和48b分别形成在金属化层ML2和ML3上。结果,第二实施例以和第一实施例同样的方式运转并获得上述相同的好处。2 is a top plan view of the printed circuit board and compensating capacitor of FIG. 1(a) according to a second embodiment of the present invention. The second embodiment is identical to the first embodiment except that a different type of compensating capacitor is used. That is, the first stage of compensation capacitors is implemented using parallel plate capacitors 46a and 46b, and the second stage of compensation capacitors is implemented using parallel plate capacitors 48a and 48b. Parallel plate capacitors 46a and 46b are formed on metallization layers ML4 and ML5, respectively, of FIG. 1(a), and parallel plate capacitors 48a and 48b are formed on metallization layers ML2 and ML3, respectively. As a result, the second embodiment operates in the same manner as the first embodiment and obtains the same benefits described above.

根据本发明的第三实施例,图3(a)是连接器的印刷电路板的侧视图,图3(b)是图3(a)的印刷电路板和补偿电容器的俯视平面图。第三实施例类似于第一实施例,其中连接器包括触点30和PCB并且接纳诸如插头20的插头。然而,取代如第一实施例中使用由高斜率和低斜率DK材料制成的混合PCB10,在第二实施例中使用同质的PCB50,其中PCB的所有基片都由高斜率DK材料制成。同样,取代PCB中通过使用交叉指型或平行板型电容器集成电容器,在第二级区域可使用表面安装型的电容器。According to a third embodiment of the present invention, FIG. 3(a) is a side view of the printed circuit board of the connector, and FIG. 3(b) is a top plan view of the printed circuit board and the compensation capacitor of FIG. 3(a). The third embodiment is similar to the first embodiment in that the connector includes contacts 30 and a PCB and receives a plug such as plug 20 . However, instead of using a hybrid PCB 10 made of high-slope and low-slope DK material as in the first embodiment, a homogenous PCB 50 is used in the second embodiment where all substrates of the PCB are made of high-slope DK material . Also, instead of integrating capacitors in the PCB by using interdigitated or parallel plate type capacitors, surface mount type capacitors may be used in the second level area.

具体地,参考图3(a),根据第三实施例的PCB50由交替层叠的四个基片S1-S4和五个金属化层ML1-ML5组成。全部四个基片S1-S4都由高DK材料制成。在第一金属化层ML1上的触点30没有在图3(a)中显示,但是在图3(b)中被显示为具有跨接线14的导电线对12。Specifically, referring to FIG. 3( a ), the PCB 50 according to the third embodiment is composed of four substrates S1 - S4 and five metallization layers ML1 - ML5 stacked alternately. All four substrates S1-S4 are made of high DK material. Contacts 30 on the first metallization layer ML1 are not shown in FIG. 3( a ), but are shown in FIG. 3( b ) as conductive wire pairs 12 with jumper wires 14 .

参考图3(b),在第一级,平行板型电容器60a和60b被分别形成在第二和第三金属化层ML2和ML3上或作为它们的一部分,其中每个电容器的两个板60a和60b都彼此平行。在第二级,表面安装电容器62a和62b被安装在第一金属化层ML1上(或安装在最后的金属化层下)。Referring to FIG. 3(b), in the first stage, parallel plate type capacitors 60a and 60b are respectively formed on or as part of the second and third metallization layers ML2 and ML3, wherein the two plates 60a of each capacitor and 60b are parallel to each other. At the second level, surface mount capacitors 62a and 62b are mounted on the first metallization layer ML1 (or below the last metallization layer).

在此实施例中,第一级电容耦合的大小随着频率下降,因为第一级平行板型电容器60a和60b处于具有高DK斜率的PCB50中。另一方面,第二级电容耦合随着频率相对平坦,因为第二级电容使用分立的表面安装电容器实现。结果,由第一级补偿串音减去第二级补偿串音组成的净补偿串音随着频率下降。通过在高频中提供低水平的补偿串音,本发明提高了低串音插头被插进插口时连接器的高频容限。另一方面,通过在低频中提供高水平的补偿串音,本发明提高了高串音插头被插进插口时连接器的低频容限。In this embodiment, the magnitude of the first stage capacitive coupling decreases with frequency because the first stage parallel-plate capacitors 60a and 60b are in the PCB 50 with a high DK slope. On the other hand, the second-stage capacitive coupling is relatively flat with frequency because the second-stage capacitance is implemented using discrete surface-mount capacitors. As a result, the net compensation crosstalk consisting of the first order compensation crosstalk minus the second order compensation crosstalk decreases with frequency. By providing low levels of compensated crosstalk at high frequencies, the present invention improves the high frequency tolerance of the connector when a low crosstalk plug is inserted into the jack. On the other hand, the present invention improves the low frequency tolerance of the connector when a high crosstalk plug is inserted into the jack by providing a high level of compensated crosstalk at low frequencies.

根据本发明的第四实施例,图4(a)是连接器的印刷电路板的侧视图,图4(b)是图4(a)的印刷电路板和补偿电容器的俯视平面图。According to a fourth embodiment of the present invention, FIG. 4(a) is a side view of the printed circuit board of the connector, and FIG. 4(b) is a top plan view of the printed circuit board and the compensation capacitor of FIG. 4(a).

第四实施例类似于第一实施例,其中连接器包括触点30并且接纳诸如插头20的插头。然而,取代使用如第一实施例中由高和低DK材料制成的混合PCB10,在第四实施例中两个同质的PCB被设置在连接器中,其中第一PCB的所有基片都由高斜率DK材料制成,第二PCB的所有基片都由低斜率DK材料制成。The fourth embodiment is similar to the first embodiment in that the connector includes contacts 30 and receives a plug such as plug 20 . However, instead of using a hybrid PCB 10 made of high and low DK materials as in the first embodiment, in a fourth embodiment two homogenous PCBs are provided in the connector, where all substrates of the first PCB are Made of high-slope DK material, all substrates of the second PCB are made of low-slope DK material.

具体地,参考图4(a),在第四实施例中,第一PCB70由交替层叠的四个基片S1-S4和五个金属化层ML1-ML5组成。在第一PCB70中的所有四个基片S1-S4都由高斜率DK材料制成。第二PCB72由交替层叠的四个基片S1-S4和五个金属化层ML1-ML5组成。在第二PCB72中的所有四个基片S1-S4都由低斜率DK材料制成。在第一金属层ML1上的触点30没有显示在图4(a)中,但是在图4(b)中被显示为具有跨接线14的导电线对12。Specifically, referring to FIG. 4( a ), in the fourth embodiment, the first PCB 70 is composed of four substrates S1 - S4 and five metallization layers ML1 - ML5 stacked alternately. All four substrates S1-S4 in the first PCB 70 are made of high slope DK material. The second PCB 72 is composed of four substrates S1-S4 and five metallization layers ML1-ML5 stacked alternately. All four substrates S1-S4 in the second PCB 72 are made of low slope DK material. Contacts 30 on the first metal layer ML1 are not shown in FIG. 4( a ), but are shown in FIG. 4( b ) as conductive wire pairs 12 with jumper wires 14 .

参考图4(b),在第一级,电容器80a和80b是分别形成在第一PCB70的第二和第三金属化层ML2和ML3上或作为它们一部分的交叉指型电容器。在第二级,电容器82a和82b是分别形成在第二PCB72的第二和第三金属化层ML2和ML3上或作为它们一部分的交叉指型电容器。Referring to FIG. 4( b ), at the first stage, capacitors 80 a and 80 b are interdigitated capacitors formed on or as part of the second and third metallization layers ML2 and ML3 of the first PCB 70 , respectively. In the second stage, capacitors 82a and 82b are interdigitated capacitors formed on or as part of the second and third metallization layers ML2 and ML3, respectively, of the second PCB 72 .

在此实施例中,第一级电容耦合的大小随着频率下降,因为第一级交叉指型电容器处于具有高DK斜率的PCB70中。另一方面,第二级电容耦合随着频率相当平坦,因为第二级交叉指型电容器处于具有低DK斜率的PCB72中。结果,由第一级补偿串音减去第二级补偿串音组成的净补偿串音随着频率下降。通过在高频提供低水平的补偿串音,本发明提高了低串音插头被插进插口时连接器的高频容限。另一方面,通过在低频提供高水平的补偿串音,本发明提高了高串音插头被插进插口时连接器的低频容限。In this embodiment, the magnitude of the first stage capacitive coupling decreases with frequency because the first stage interdigitated capacitors are in PCB 70 with a high DK slope. On the other hand, the second stage capacitive coupling is fairly flat with frequency because the second stage interdigitated capacitors are in PCB 72 with a low DK slope. As a result, the net compensation crosstalk consisting of the first order compensation crosstalk minus the second order compensation crosstalk decreases with frequency. By providing low levels of compensating crosstalk at high frequencies, the present invention improves the high frequency tolerance of the connector when a low crosstalk plug is inserted into the jack. On the other hand, the present invention improves the low frequency tolerance of the connector when a high crosstalk plug is inserted into the jack by providing a high level of compensated crosstalk at low frequencies.

图5是根据本发明的第五实施例的连接器的侧视图。第五实施例类似于第一实施例,其中连接器包括触点30和PCB并且接纳诸如插头20的插头。然而,取代在PCB中具有五个基片,在第五实施例中PCB90具有四个基片。Fig. 5 is a side view of a connector according to a fifth embodiment of the present invention. The fifth embodiment is similar to the first embodiment in that the connector includes contacts 30 and a PCB and receives a plug such as plug 20 . However, instead of having five substrates in the PCB, PCB 90 has four substrates in the fifth embodiment.

具体地,参考图5,混合PCB90由交替层叠的四个基片S1-S4和五个金属化层ML1-ML5组成。第一和第二基片S1和S2由高斜率DK材料制成,而第三和第四基片S3和S4由低斜率DK材料制成。在第一级,交叉指型电容器94a被形成在金属化层ML2上或作为它的一部分。在第二级,一个交叉指型电容器96a被形成在金属化层ML4上或作为它的一部分。Specifically, referring to FIG. 5 , the hybrid PCB 90 is composed of four substrates S1 - S4 and five metallization layers ML1 - ML5 stacked alternately. The first and second substrates S1 and S2 are made of high-slope DK material, while the third and fourth substrates S3 and S4 are made of low-slope DK material. At the first stage, interdigitated capacitor 94a is formed on or as part of metallization layer ML2. In the second stage, an interdigitated capacitor 96a is formed on or as part of metallization layer ML4.

在此实施例中,第一级电容耦合的大小随着频率而下降,因为第一级交叉指型电容器处于具有高DK斜率的基片S1和S2之间。另一方面,第二级电容耦合没有随着频率明显下降,因为第二级交叉指型电容器处于具有低DK斜率的基片S3和S4之间。结果,由第一级补偿串音减去第二级补偿串音组成的净补偿串音随着频率而下降。通过在高频中提供低水平的补偿串音,本发明提高了低串音插头被插进插口时连接器的高频容限。另一方面,通过在低频中提供高水平的补偿串音,本发明提高了高串音插头被插进插口时连接器的低频容限。In this embodiment, the magnitude of the first stage capacitive coupling decreases with frequency because the first stage interdigitated capacitor is between substrates S1 and S2 with a high DK slope. On the other hand, the second-stage capacitive coupling does not drop significantly with frequency because the second-stage interdigitated capacitor is between substrates S3 and S4 with a low DK slope. As a result, the net crosstalk, which consists of first order compensation crosstalk minus second order compensation crosstalk, decreases with frequency. By providing low levels of compensated crosstalk at high frequencies, the present invention improves the high frequency tolerance of the connector when a low crosstalk plug is inserted into the jack. On the other hand, the present invention improves the low frequency tolerance of the connector when a high crosstalk plug is inserted into the jack by providing a high level of compensated crosstalk at low frequencies.

在本发明的各种实施例中,被用于PCB基片的高斜率DK材料最好具有在1MHz等于或大约4.0的介电常数,在1MHz和1GHz之间该介电常数的频率每十进位的下降率为0.4。被用于PCB基片的低斜率DK材料最好具有等于或大约4.0的介电常数,其中在1MHz和1GHz的频率范围内应保持平坦。作为一个例子,诸如FR-4和/或Teflon的材料可以被用作PCB基片。其他可商业获得的高和低斜率DK材料都可以被使用。例如,Nelco N4000-7是可用于本发明的PCB基片的高斜率DK材料的例子,而Nelco N4000-13 SI是可用于本发明的PCB基片的低DK斜率材料的例子。Nelco N4000-7具有在1MHz为4.5和在1GHz为3.9的介电常数,而Nelco N4000-13SI具有在1MHz为3.6且在1GHz为3.5的介电常数。还有,如果需要,这些材料的介电常数水平可以通过调节交叉指型或平行板型电容器的足迹范围被很容易地调整。照此,可以使用在1MHz具有大约3.0至5.0范围内的介电常数的材料。显然也可以使用其他材料。In various embodiments of the present invention, the high-slope DK material used for the PCB substrate preferably has a dielectric constant equal to or about 4.0 at 1 MHz, with a frequency per decade of the dielectric constant between 1 MHz and 1 GHz The rate of decline is 0.4. The low-slope DK material used for the PCB substrate preferably has a dielectric constant equal to or about 4.0, which should remain flat over the frequency range of 1 MHz and 1 GHz. As an example, materials such as FR-4 and/or Teflon may be used as the PCB substrate. Other commercially available high and low slope DK materials can be used. For example, Nelco N4000-7 is an example of a high slope DK material that can be used in the PCB substrate of the present invention, and Nelco N4000-13 SI is an example of a low DK slope material that can be used in the PCB substrate of the present invention. Nelco N4000-7 has a dielectric constant of 4.5 at 1 MHz and 3.9 at 1 GHz, while Nelco N4000-13SI has a dielectric constant of 3.6 at 1 MHz and 3.5 at 1 GHz. Also, the dielectric constant levels of these materials can be easily tuned by adjusting the footprint range of interdigitated or parallel plate capacitors, if desired. As such, materials having a dielectric constant in the range of approximately 3.0 to 5.0 at 1 MHz may be used. Obviously other materials can also be used.

通常,大部分印刷电路板材料的介电常数(DK)随着频率下降。在常规的2级补偿系统中,由于在同一材料基片上部署反向极性的第一和第二补偿级,这种下降的效果已经在很大程度上被削弱。这使得第一和第二级有相同的DK下降率。本发明有意在第一级使用具有很陡峭的DK下降率的材料且在第二级使用具有很低的DK下降率的材料。这就使结果的电容耦合有这样方式的倾向,即随着频率增加降低补偿的总体水平,因而提高了高频NEXT性能。In general, the dielectric constant (DK) of most PCB materials decreases with frequency. In conventional 2-stage compensation systems, the effect of this drop has been largely weakened due to the deployment of first and second compensation stages of opposite polarity on the same material substrate. This makes the first and second tiers have the same DK drop rate. The present invention intentionally uses a material with a very steep DK dip in the first stage and a very low DK dip in the second stage. This tends to result in capacitive coupling in such a way that as frequency increases the overall level of compensation is reduced, thus improving high frequency NEXT performance.

尽管说明了四或五个PCB基片,但是非常显而易见的是任何其他数量的PCB基片和/或金属化层都可以被用于PCB。一个重要方面是,当比较用于制造低斜率DK基片和高斜率DK基片的材料时,DK斜率存在大的差异。高DK斜率和低DK斜率之间的差异可以处在频率的每十进位0.15至0.45的范围内。Although four or five PCB substrates are illustrated, it is quite obvious that any other number of PCB substrates and/or metallization layers could be used for the PCB. An important aspect is that there is a large difference in DK slope when comparing the materials used to fabricate low-slope DK substrates and high-slope DK substrates. The difference between the high DK slope and the low DK slope may be in the range of 0.15 to 0.45 per decade of frequency.

由于具有两个不同DK斜率的材料,连接器的设计者具有设计/提高电容器值的更大的灵活性从而更好地抑制连接器的NEXT。更进一步,NEXT抑制的各个级可以被安置在具有非常不同DK斜率的基片上/基片之间。本发明的结果的连接器可以与外壳、绝缘位移连接器、插口弹簧触点等相结合。With materials having two different DK slopes, the connector designer has more flexibility in designing/increasing the capacitor value to better suppress the NEXT of the connector. Still further, stages of NEXT suppression can be placed on/between substrates with very different DK slopes. The resulting connector of the present invention can be combined with housings, insulation displacement connectors, socket spring contacts and the like.

还有,上述实施例的各种结构和特征可以被组合或被其他实施例替换。例如,在图3(b)中的平行板型电容器60a、60b可以用交叉指型电容器替换。在图4(b)中的交叉指型电容器80a、80b、82a、82b可以用平行板型电容器替换。无论交叉指型电容器被使用在哪里,这种电容器都可以相对于相应的其他交叉指型电容器被复制。在一个连接器中,一些交叉指型电容器可以被实现在一个单一的金属化层上或几个金属化层上。更进一步,如上文所述,可以使用用于一个或多个PCB的任何数量的金属化层/基片;高和/或低斜率DK材料的位置可以改变;补偿电容器的位置可以根据高和/或低DK斜率材料的使用和位置而改变;且可以使用不同类型的电容器(例如,平行板型、交叉指型、表面安装型等)。Also, various structures and features of the above-described embodiments may be combined or replaced by other embodiments. For example, the parallel plate type capacitors 60a, 60b in FIG. 3(b) can be replaced with interdigitated type capacitors. The interdigitated capacitors 80a, 80b, 82a, 82b in FIG. 4(b) can be replaced with parallel plate capacitors. Wherever interdigitated capacitors are used, such capacitors can be duplicated relative to corresponding other interdigitated capacitors. In a connector, interdigitated capacitors can be implemented on a single metallization layer or on several metallization layers. Still further, as mentioned above, any number of metallization layers/substrates for one or more PCBs can be used; the location of high and/or low slope DK materials can be varied; or the use and location of low DK slope materials; and different types of capacitors (eg, parallel plate, interdigitated, surface mount, etc.) can be used.

尽管本发明已经通过上述附图中所示的实施例进行说明,但是在本技术领域中普通熟练的技术人员应该理解,本发明并不限于这些实施例,而在不背离本发明精神的情况下可以对其进行各种变化或修改。Although the present invention has been described by the embodiments shown in the above drawings, it should be understood by those skilled in the art that the present invention is not limited to these embodiments, and without departing from the spirit of the present invention Various changes or modifications can be made thereto.

Claims (38)

1, a kind of printed circuit board (PCB) (PCB) structure can be used for reducing cross-talk in the connector, it is characterized in that, this PCB structure comprises:
At least one PCB, this PCB comprises a plurality of substrates and a plurality of metal layers between substrate, this substrate comprises at least one first substrate made by first material and at least one second substrate of being made by second material, first material has first dielectric constant, and second material has second dielectric constant that is lower than first dielectric constant on the rate of descent with frequency;
Be arranged on described at least one first on-chip at least one first capacitor in the first order zone of PCB structure; With
Be arranged on described at least one second on-chip at least one second capacitor in the zone, the second level of PCB structure.
2, PCB structure as claimed in claim 1 is characterized in that, wherein, first dielectric constant is approximately 4.0 at 1MHz, and the every decimal rate of descent of the frequency of this first dielectric constant is 0.4 between 1MHz and 1GHz.
3, PCB structure as claimed in claim 1 is characterized in that, wherein, second dielectric constant is approximately 4.0, remains unchanged in the frequency range of 1MHz and 1GHz.
4, PCB structure as claimed in claim 1 is characterized in that, wherein, the substrate of PCB is five mutual stacked substrates,
The part of first substrate, second substrate and the 3rd substrate make by second material and
The part of the 3rd substrate, the 4th substrate and the 5th substrate are made by first material.
5, PCB structure as claimed in claim 4 is characterized in that, wherein, described at least one first capacitor comprises the 4th and the 5th on-chip two first capacitor elements in the first order zone that is formed on the PCB structure.
6, PCB structure as claimed in claim 5 is characterized in that, wherein, and described two first capacitor boards that capacitor element is interdigital capacitor or parallel plate capacitors.
7, PCB structure as claimed in claim 4 is characterized in that, wherein, described at least one second capacitor comprises the second and the 3rd on-chip two second capacitor elements in the zone, the second level that is formed on the PCB structure.
8, PCB structure as claimed in claim 7 is characterized in that, wherein, and described two second capacitor boards that capacitor element is interdigital capacitor or parallel plate capacitors.
9, PCB structure as claimed in claim 1 is characterized in that, wherein, the substrate of PCB is four substrates that are laminated to each other,
First substrate and second substrate make by first material and
The 3rd substrate and the 4th substrate are made by second material.
10, PCB structure as claimed in claim 9 is characterized in that, wherein, described at least one first capacitor comprises second on-chip first capacitor in the first order zone that is formed on the PCB structure.
11, PCB structure as claimed in claim 9 is characterized in that, wherein, described at least one second capacitor comprises the 4th on-chip second capacitor in the zone, the second level that is formed on the PCB structure.
12, PCB structure as claimed in claim 1 is characterized in that, wherein, described at least one PCB comprises first and second PCB, and a PCB comprises the substrate of being made by first material, and the 2nd PCB comprises the substrate of being made by second material.
13, PCB structure as claimed in claim 12 is characterized in that, wherein, described at least one first capacitor comprises at least two on-chip two first capacitor elements of a PCB in the first order zone that is formed on the PCB structure.
14, PCB structure as claimed in claim 13 is characterized in that, wherein, two first capacitor elements are capacitor boards of interdigital capacitor or parallel plate capacitors.
15, PCB structure as claimed in claim 12 is characterized in that, wherein, described at least one second capacitor comprises at least two on-chip two second capacitor elements of the 2nd PCB in the zone, the second level that is formed on the PCB structure.
16, PCB structure as claimed in claim 15 is characterized in that, wherein, and described two second capacitor boards that capacitor element is interdigital capacitor or parallel plate capacitors.
17, a kind of printed circuit board (PCB) (PCB) structure can be used for reducing cross-talk in the connector, it is characterized in that, this PCB structure comprises:
Printed circuit board (PCB) (PCB) comprises stacked a plurality of substrates and a plurality of metal layers between substrate, and this substrate is made by the material that has the dielectric constant of high rate of descent with frequency;
Be arranged on one of them on-chip at least one first capacitor in the first order zone of PCB structure; With
Be arranged on one of them on-chip at least one second capacitor in the zone, the second level of PCB structure.
18, PCB structure as claimed in claim 17 is characterized in that, wherein, substrate material has about 4.0 dielectric constant at 1MHz, and the every decimal rate of descent of the frequency of this dielectric constant is 0.4 between 1MHz and 1GHz.
19, PCB structure as claimed in claim 17 is characterized in that, wherein, described at least one first capacitor comprises at least two on-chip two first capacitor elements in the first order zone that is formed on the PCB structure.
20, PCB structure as claimed in claim 19 is characterized in that, wherein, and described two first capacitor boards that capacitor element is interdigital capacitor or parallel plate capacitors.
21, PCB structure as claimed in claim 17 is characterized in that, wherein, described at least one second capacitor comprises on first substrate in the zone, the second level that is surface mounted in the PCB structure or the second independent discrete capacitor under last substrate.
22, a kind of connector that is used to reduce cross-talk is characterized in that, comprising:
At least one printed circuit board (PCB) (PCB), this PCB comprises a plurality of substrates and a plurality of metal layers between substrate, this substrate comprises at least one first substrate made by first material and at least one second substrate of being made by second material, first material has first dielectric constant, and second material has second dielectric constant that is lower than first dielectric constant on the rate of descent with frequency;
Be arranged on described at least one first on-chip at least one first capacitor in the first order zone of connector;
Be arranged on described at least one second on-chip at least one second capacitor in the zone, the second level of connector; With
Be arranged at least one conductive contact on the PCB.
23, connector as claimed in claim 22 is characterized in that, wherein, first dielectric constant is approximately 4.0 at 1MHz, and the every decimal rate of descent of the frequency of this dielectric constant is 0.4 between 1MHz and 1GHz.
24, connector as claimed in claim 22 is characterized in that, wherein, second dielectric constant is approximately 4.0, remains unchanged in the frequency range of 1MHz and 1GHz.
25, connector as claimed in claim 22 is characterized in that, wherein, the substrate of PCB is five mutual stacked substrates,
The part of first substrate, second substrate and the 3rd substrate make by second material and
The part of the 3rd substrate, the 4th substrate and the 5th substrate are made by first material.
26, connector as claimed in claim 25 is characterized in that, wherein, described at least one first capacitor comprises the 4th and the 5th on-chip two first capacitor elements in the first order zone that is formed on connector.
27, connector as claimed in claim 25 is characterized in that, wherein, described at least one second capacitor comprises the second and the 3rd on-chip two second capacitor elements in the zone, the second level that is formed on connector.
28, connector as claimed in claim 22 is characterized in that, wherein, the substrate of PCB is four mutual stacked substrates,
First substrate and second substrate make by first material and
The 3rd substrate and the 4th substrate are made by second material.
29, connector as claimed in claim 28 is characterized in that, wherein, described at least one first capacitor comprises second on-chip first capacitor in the first order zone that is formed on connector.
30, connector as claimed in claim 28 is characterized in that, wherein, described at least one second capacitor comprises the 4th on-chip second capacitor in the zone, the second level that is formed on connector.
31, connector as claimed in claim 22 is characterized in that, wherein, described at least one PCB comprises first and second PCB, and a PCB comprises the substrate of being made by first material, and the 2nd PCB comprises the substrate of being made by second material.
32, connector as claimed in claim 31 is characterized in that, wherein, described at least one first capacitor comprises at least two on-chip two first capacitor elements of a PCB in the first order zone that is formed on connector.
33, connector as claimed in claim 31 is characterized in that, wherein, described at least one second capacitor comprises at least two on-chip two second capacitor elements of the 2nd PCB in the zone, the second level that is formed on connector.
34, a kind of connector that is used to reduce cross-talk is characterized in that, comprising:
Printed circuit board (PCB) (PCB) comprises a plurality of stacked substrates and a plurality of metal layers between substrate, and this substrate is made by the material that has the dielectric constant of high rate of descent with frequency;
Be arranged on one of them on-chip at least one first capacitor in connector first order zone;
Be arranged on one of them on-chip at least one second capacitor in zone, the connector second level; With
Be arranged at least one conductive contact on the PCB.
35, connector as claimed in claim 34 is characterized in that, wherein, substrate material has about 4.0 dielectric constant at 1MHz, and the every decimal rate of descent of the frequency of this dielectric constant is 0.4 between 1MHz and 1GHz.
36, connector as claimed in claim 34 is characterized in that, wherein, described at least one first capacitor comprises at least two on-chip two first capacitor elements in the first order zone that is formed on connector.
37, connector as claimed in claim 36 is characterized in that, wherein, and described two first capacitor boards that capacitor element is interdigital capacitor or parallel plate capacitors.
38, connector as claimed in claim 34 is characterized in that, wherein, described at least one second capacitor comprises on first substrate in the zone, the second level that is surface mounted in connector or the second independent discrete capacitor under last substrate.
CNB2004800074832A 2003-03-21 2004-03-17 multi-stage near-end crosstalk compensation Expired - Lifetime CN100484364C (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103390818B (en) * 2013-08-09 2015-08-12 浙江一舟电子科技股份有限公司 A kind of ultrahigh speed communication resistance to crosstalk interface circuit and comprise the socket of this interface circuit

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US6353540B1 (en) * 1995-01-10 2002-03-05 Hitachi, Ltd. Low-EMI electronic apparatus, low-EMI circuit board, and method of manufacturing the low-EMI circuit board.
US5997358A (en) * 1997-09-02 1999-12-07 Lucent Technologies Inc. Electrical connector having time-delayed signal compensation
US6057743A (en) * 1998-06-22 2000-05-02 Hubbell Incorporation Distributed noise reduction circuits in telecommunication system connector
CN2494043Y (en) * 2001-08-23 2002-05-29 超迈工业股份有限公司 Electrical connector components that reduce crosstalk

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Publication number Priority date Publication date Assignee Title
CN103390818B (en) * 2013-08-09 2015-08-12 浙江一舟电子科技股份有限公司 A kind of ultrahigh speed communication resistance to crosstalk interface circuit and comprise the socket of this interface circuit

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