CN1728221A - Light emitting device and image forming device - Google Patents
Light emitting device and image forming device Download PDFInfo
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- CN1728221A CN1728221A CNA2005100780409A CN200510078040A CN1728221A CN 1728221 A CN1728221 A CN 1728221A CN A2005100780409 A CNA2005100780409 A CN A2005100780409A CN 200510078040 A CN200510078040 A CN 200510078040A CN 1728221 A CN1728221 A CN 1728221A
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- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
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- G—PHYSICS
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- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/04—Apparatus for electrographic processes using a charge pattern for exposing, i.e. imagewise exposure by optically projecting the original image on a photoconductive recording material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明涉及发光装置及图象形成装置。其中，在象素电路(P)中，由于保持晶体管(61)、OLED元件(64)及驱动晶体管(62)沿着Y方向形成，所以能够缩小的间距(W)。进而，由于排列成交错状，所以可以使长度(Q)大于间距(W)。由于的发光亮度取决于其面积，所以能够。提供高亮度且高析象度的行头。
The present invention relates to a light emitting device and an image forming device. Wherein, in the pixel circuit (P), since the holding transistor (61), the OLED element (64) and the driving transistor (62) are formed along the Y direction, the pitch (W) can be reduced. Furthermore, since they are arranged in a zigzag shape, the length (Q) can be made larger than the pitch (W). Since the luminous brightness depends on its area, it can be. Provide high brightness and high resolution line head.
Description
Technical field
The present invention relates to use light-emitting device and the image processing system that sends the light-emitting component of the size light corresponding such as Organic Light Emitting Diode like that with the magnitude of current that flows into negative electrode by anode.
Background technology
In recent years, the follow-on luminescent device of liquid crystal cell as an alternative, be known as Organic Light Emitting Diode (Organic Light EmittingDiode, below suitably be called for short " OLED the element ") element of organic electroluminescent device and light emitting polymer element etc., noticeable.Developing the image processing system that wardrobe that a plurality of these OLED elements will be set use as exposing unit in delegation.In this wardrobe, except the OLED element, a plurality of transistorized pixel circuits that are intended to drive it that comprise are set also.For example, in patent documentation 1, announced the technology of the wardrobe that constitute by the 1 OLED element of going.
[patent documentation 1] spy opens flat 4-363264 communique
, the image dissection degree of printer depends on the spacing of pixel circuit; The area of OLED element is then depended in the brightness of wardrobe.Therefore, constitute the best configuration of the element of pixel circuit, just become a major issue.And, also preferably can reduce source impedance.
Summary of the invention
The present invention develops the image processing system that its purpose is to provide the light-emitting device of the spacing that can dwindle pixel circuit and uses it at above-mentioned situation.
In order to solve above-mentioned problem, the light-emitting device that the present invention relates to, it is characterized in that: be that a plurality of pixel circuits are arranged to a direction, each of described a plurality of pixel circuits all has: the light-emitting component that sends the size light corresponding with the amount of drive current, described drive current is supplied with the driving transistors of described light-emitting component, do media, the data-signal of supplying with is supplied with the maintenance transistor of described driving transistors by data line, connect described driving transistors and the transistorized connecting wiring of described maintenance; In the direction of reporting to the leadship after accomplishing a task with the orientation of described a plurality of pixel circuits, arrange described maintenance transistor, described light-emitting component and described driving transistors, the described light-emitting component of configuration between described maintenance transistor and described driving transistors.
After adopting the present invention,,, can improve the image dissection degree so can dwindle the spacing of pixel circuit owing in pixel circuit, be arranged in order maintenance transistor, light-emitting component and driving transistors.
In addition, in above-mentioned light-emitting device, do media, with the described driving transistors of the 1st power supply voltage supplying by the 1st power-supply wiring; Described light-emitting component has the 1st electrode that is connected with described driving transistors and the 2nd electrode of doing media, supply the 2nd supply voltage by the 2nd power-supply wiring; Described the 1st power-supply wiring and described the 2nd power-supply wiring, outside the zone that forms described a plurality of pixel circuits, the most also the side at described driving transistors disposes.After adopting this layout, because the 1st power-supply wiring and the 2nd power-supply wiring and driving transistors neighbor configuration, so can stop unnecessary wiring in the power supply supply.Its result can constitute pixel circuit with less area
Here, light-emitting component is preferably in the pixel circuit of adjacency, is arranged in staggered.In order to improve the luminosity of light-emitting component, need to increase its area.Be arranged in staggered after, just can increase the area of light-emitting component, can form light-emitting component with high brightness luminescent.
And then, the length of the orientation of the described pixel circuit in the described light-emitting component, the spacing that cans be compared between described a plurality of pixel circuits most is long.At this moment,,, dwindle on the one hand the spacing between pixel circuit, improve the image dissection degree of light-emitting device so can improve luminosity on the one hand because large-area light-emitting component is arranged in staggered.
In above-mentioned light-emitting device, described driving transistors and described light-emitting component, has the stepped construction that constitutes by multilayer, in described multilayer, comprise: the 1st layer of wiring, the 2nd layer of wiring, constitute the 3rd layer of wiring of described the 2nd electrode, the 1st interlayer insulating film that between described the 1st layer of wiring and described the 2nd layer of wiring, is provided with, the 2nd interlayer insulating film that between described the 2nd layer of wiring and described the 3rd layer of wiring, is provided with; Described the 1st power-supply wiring, preferably use described the 1st layer wiring and described the 2nd layer of wiring after form; Described the 2nd power-supply wiring, preferably use described the 2nd layer wiring and described the 3rd layer of wiring after form.At this moment, because the 1st power-supply wiring and the 2nd power-supply wiring are made 2 layers of structure, so can reduce source impedance.And then, because the 2nd layer of wiring of dual-purpose in the 1st power-supply wiring and the 2nd power-supply wiring, so can dwindle chip area.In addition, in the part that the 1st power-supply wiring and the 2nd power-supply wiring are reported to the leadship after accomplishing a task, can from a power-supply wiring, eliminate the 2nd layer of power-supply wiring at least.
In above-mentioned light-emitting device, described driving transistors and described light-emitting component, has the stepped construction that constitutes by multilayer, in described multilayer, comprise: the 1st layer of wiring, the 2nd layer of wiring constitutes the 3rd layer of wiring of described the 2nd electrode, constitutes the 4th layer of wiring of described the 1st electrode, the 1st interlayer insulating film that between described the 1st layer of wiring and described the 2nd layer of wiring, is provided with, the 2nd interlayer insulating film that between described the 2nd layer of wiring and described the 3rd layer of wiring, is provided with; Described the 1st power-supply wiring, preferably use described the 1st layer wiring and described the 2nd layer of wiring after form; Described the 2nd power-supply wiring, preferably use described the 2nd layer of wiring, described the 3rd layer wiring and described the 4th layer of wiring after form.At this moment, because the 1st electrode and the 2nd power-supply wiring are made 2 layers of structure, so can reduce source impedance.And then, because the 2nd layer of wiring of dual-purpose in the 1st electrode and the 2nd power-supply wiring, so need not make simple in structure for power-supply wiring is made stepped construction and special layer is set.
In addition, in above-mentioned light-emitting device, described the 1st electrode, the preferably anode of described light-emitting component; Described the 2nd electrode, the preferably negative electrode of described light-emitting component.At this moment, for example the TFT of the most handy P raceway groove formation keeps transistor, and with the TFT formation maintenance transistor of N raceway groove, the source electrode with hot side power supply supply driving transistors is connected its drain electrode with the anode of light-emitting component, the low potential side power supply is supplied with negative electrode.
In addition, above-mentioned light-emitting device preferably includes: be arranged in parallel with the orientation of described a plurality of pixel circuits, with each a plurality of data lines that are connected of described a plurality of pixel circuits; Have the 1st end face and the 2nd end face, between them, form the substrate of described a plurality of data line, described maintenance transistor, described light-emitting component, described driving transistors, described the 1st power-supply wiring and described the 2nd power-supply wiring successively; Cover the seal member that described a plurality of data line, described maintenance transistor, described light-emitting component, described driving transistors, described the 2nd power-supply wiring and described the 1st power-supply wiring ground are connected with described substrate.
In general, light-emitting component is with after oxygen contacts, and performance will deterioration.Therefore, in order when itself and atmosphere are separated, also to protect internal circuit, just make light-emitting device adopt hermetically-sealed construction.On hermetically-sealed construction, gimmicks such as jar sealing, diaphragm seal, substrate bonding sealing are widely known by the people.But no matter adopt which kind of gimmick, in the hermetically-sealed construction of reality, outside gas also can be invaded in the seal area.Therefore, be preferably near the light-emitting component that forms of central authorities of substrate.After adopting the present invention,, can near the central authorities of substrate, form light-emitting component owing on substrate, form a plurality of data lines → maintenance transistor → light-emitting component → driving transistors → power lead successively.Like this, can improve the reliability of light-emitting device.
In addition, above-mentioned light-emitting device preferably includes: be arranged in parallel with the orientation of described a plurality of pixel circuits, with each a plurality of data lines that are connected of described a plurality of pixel circuits; Have the 1st end face and the 2nd end face, between them, form the substrate of described a plurality of data line, described maintenance transistor, described light-emitting component, described driving transistors, described the 2nd power-supply wiring and described the 1st power-supply wiring successively; Cover the seal member that described a plurality of data line, described maintenance transistor, described light-emitting component, described driving transistors, described the 1st power-supply wiring and described the 2nd power-supply wiring ground are connected with described substrate; Described the 1st electrode is the anode of described light-emitting component; Described the 2nd electrode is the negative electrode of described light-emitting component.Because easily negative and oxygen reaction, so preferably as far as possible with the central part of cathode arrangement at substrate.After adopting the present invention,, dispose away from the 2nd end face, close middle ground, so can more close middle ground configuration negative electrode than the 1st power-supply wiring owing to be connected the 2nd power-supply wiring with feminine gender.Like this, can improve the reliability of light-emitting device.
The image processing system that the present invention relates to has the photoreceptor that is formed image after the irradiate light and will form the head of described image behind the described photoreceptor of irradiate light; Be preferably in and use above-mentioned light-emitting device in the described head.As mentioned above, because the spacing of the pixel circuit of light-emitting device reduces, and sends the light of high brightness, so can be the image that forms the high image dissection degree at photoreceptor.
Description of drawings
Fig. 1 is the block scheme of the structure of expression light-emitting device of the present invention.
Fig. 2 is the circuit diagram of the input esd protection unit of this device of expression.
Fig. 3 is the circuit diagram of the output esd protection unit of this device of expression.
Fig. 4 is the circuit diagram of the pixel circuit of this device of expression.
Fig. 5 is the oscillogram of the relation of expression data-signal and drive current.
Fig. 6 is the vertical view of the wire structures of expression pixel block and data line.
Fig. 7 is the sectional view of Z1-Z1 ' line shown in Figure 6.
Fig. 8 is the sectional view of Z2-Z2 ' line shown in Figure 6.
Fig. 9 is the vertical disconnected side view of an example of presentation image formation device.
Figure 10 is the vertical disconnected side view of other example of presentation image formation device.
Figure 11 is the stereographic map of the contour structures of expression light-emitting device.
Figure 12 is that expression uses S-S ' line to cut off the sectional view of an example of the section behind this device.
Figure 13 is that expression uses S-S ' line to cut off the sectional view of other example of the section behind this device.
Embodiment
Below, with reference to accompanying drawing, tell about embodiments of the present invention.
＜light-emitting device 〉
Fig. 1 is the block scheme of the structure of the light-emitting device that relates to of expression embodiments of the present invention.This light-emitting device, the head 10 that is used as the printer of image processing system uses.Head 10 is shaven heads of line, comprises input protection circuit 20,30, the 128 data lines L0～L127 of impact damper portion, output protection circuit 40, shift register 50 and pixel block B1～B40.To head 10, except that supplying with data-signal D0～D127, also supply with various control signals and power supply signal.Input protection circuit 20 is made of protected location Ua ' between the power supply that is provided with between a plurality of input esd protection unit Ua that are provided with in the wiring of supplying with control signal and a plurality of power supplys at the supply power signal.As control signal, comprise shift pulse signal SP, clock pulse signal CLK and enabling signal EN.Impact damper portion 30 constitutes with a plurality of transducers 31, when playing a role as driver from data-signal D0～D127 to data line L0～L127 that supply with, go back the impedance of each control signal of Low ESR conversion after, supply with shift register 50.
Shift pulse signal SP is when beginning during main sweep, becomes effective pulse; Enabling signal EN is to allow the signal of output by the selection signal SEL1～SEL40 of shift register 50 outputs.In shift register 50, supply line voltage signal VHH and VLL.Power supply voltage signal VHH does media by wiring 50b and supplies with; Power supply voltage signal VHH does media by wiring 50a and supplies with.Shift register 50 makes shift pulse signal SP displacement according to clock pulse signal CLK under the effective state of enabling signal EN, signal SEL1～SEL40 is selected in output successively.Each selects signal SEL1～SEL40, becomes during 1/40 during the main sweep effectively.In addition, clock pulse signal CLK, 50c mediates by wiring, is supplied to shift register 50.
The the 1st～the 40th pixel block B1～B40, selected signal SEL1～SEL40 select on exclusiveness ground successively.Owing to like this (during writing) laggard line time during being divided into a plurality of selections during the main sweep is separated driving, so can cut down the radical of data line L0～L127.Each of the 1st～the 40th pixel block B1～B40 all has 128 the pixel circuit Ps corresponding with each data line L0～L127.Supply with the 1st power supply voltage signal VDDEL and the 2nd power supply voltage signal VSSEL for these pixel circuits P.Then, during each was selected, the data-signal D0～D127 by data line L0～L127 mediates and supplies with was written into pixel circuit P.In addition, data-signal D0～D127 that this is routine is the binary signal that the OLED element is flickered.
The circuit diagram of the input esd protection unit Ua that input protection circuit shown in Fig. 2 20 uses, the circuit diagram of the output esd protection unit Ub that output protection circuit shown in Fig. 3 40 uses.Input esd protection unit Ua and output esd protection unit Ub between hot side power supply and low potential side power supply, connect with diode d1 and d2, and then also in input esd protection unit Ua resistor R are set.In addition, between power-supply wiring, oppositely connect diode, constitute protected location Ua ' between power supply.Preventing the holding circuit that static discharge is used why for the input end of data line L0～L127 and both sides' setting of output terminal, is that the length of data line L0～L127 reaches the cause about 215mm because this routine head 10 is corresponding with the printed dimensions that A4 indulges.In addition, setting prevents the holding circuit that static discharge is used to power supply, also based on same reason.And then, why impact damper portion 30 is set, be because input esd protection unit Ua has resistor R, if impact damper portion 30 is not set, after external drive, the cause that will increase the time delay of signal.
Fig. 4 illustrates the circuit diagram of pixel circuit P.Pixel circuit P comprises keeping transistor 61, driving transistors 62 and OLED element 64.Supply with to the grid that keeps transistor 61 by shift register 50 and to select some among signal SEL1～SEL40, the some connection among its source electrode and the data line L0～L127, be supplied to some among data-signal D0～D127.Keep the drain electrode of transistor 61 and the grid of driving transistors 62, be connected wiring 63 and connect.Just as described later, in connecting wiring 63, subsidiary stray capacitance, this electric capacity can be as keeping capacitor C to play a role.In keeping capacitor C, during selecting, write the voltage of 2 values, till during the next one selection, keep the voltage that writes.So, according to select signal SEL1～SEL40 selected to keep transistorized during in, 64 of OLED elements data-signal D0～D127 be the bright signal of instruction OLED element 64 during luminous.
Give the drain electrode of driving transistors 62, supply with the 1st power supply voltage signal VDDEL, its source electrode is connected with the anode of OLED element 64.The negative electrode of OLED element 64 is supplied to the 2nd power supply voltage signal VSSEL.OLED element 64 sends the light corresponding with the current value of drive current.In the pixel circuit P of present embodiment, with TFT (thin film transistor (TFT)) the formation maintenance transistor 61 of P raceway groove, with the TFT formation driving transistors 62 of N raceway groove.The transistor of P raceway groove has excellent characteristic aspect the suction of electric current, so as shown in Figure 5, the rising waveform of drive current is steep, and falling waveform is slow.Gamma characteristic when its result, the low gray scale of OLED element 64 is poor, but can improve peak brightness.In general, the sensitivity of photoreceptor is low, so it is very important to improve peak brightness.On the other hand, if near the luminous quantity the critical value electric current of OLED element 64, because the sensitivity of photoreceptor is extremely low, so image quality is not had harmful effect.Therefore, preferably preferentially guarantee peak brightness, constitute maintenance transistor 61, constitute driving transistors 62 with the N raceway groove with the P raceway groove.
Fig. 6 illustrates the wire structures of pixel block and data line.Just as shown in the drawing, data line L0～L127 is arranged in parallel along directions X (orientation of pixel circuit P).In addition, a plurality of pixel circuit P arrange towards directions X.Pixel circuit P has the transistor 61 of maintenance, driving transistors 62, connecting wiring 63 and OLED element 64.They are arranged along Y direction (with the staggered direction of the orientation of pixel circuit P).Each keeps the grid of transistor 61, and La connects jointly by wiring, and is connected with shift register 50.Data line L0～L127 forms behind the use source electrode line.Each keeps transistor 61 and data line L0～L127, is connected by the connecting wiring 60 that has used gate line.Keeping between transistor 61 and the driving transistors 62 OLED element 64 being set.In addition, each OLED element 64 is arranged as staggered.
In pixel circuit P, keep the occupied area of transistor 61, driving transistors 62 and OLED element 64 bigger.So, after these inscapes are provided with along the Y direction, can dwindle the spacing W of pixel circuit P.Its result can improve the image dissection degree.
In general, the sensitivity of photoreceptor is lower, so in head 10, it is very important to improve luminosity.The luminosity of OLED element 64 is directly proportional with its area., behind the increasing OLED element 64, the spacing W of pixel circuit P will be elongated.In other words, luminosity and image dissection degree exist this those long relations that disappear.In this embodiment, staggered owing to OLED element 64 is configured to, so compare, can increase the length Q of OLED element 64 with spacing W.Like this, just not only can make OLED element 64 usefulness high brightness luminescents but also can dwindle spacing W, improve the image dissection degree.
In addition, the driving transistors 62 of contiguous each pixel circuit P disposes the 1st power-supply wiring Ld and the 2nd power-supply wiring Ls.Owing to do media by the 1st power-supply wiring Ld, with the source electrode of the 1st power supply signal VDDEL supply driving transistors 62, institute is so that after both vicinities, can stop unnecessary wiring.On the other hand, be the 2nd power supply signal VSSEL that media is supplied with, be supplied to the negative electrode 645 (with reference to Fig. 7) of OLED element 64 by the 2nd power-supply wiring Ls.
Fig. 7 is the sectional view of Z1-Z1 ' line shown in Figure 6.Make with SiO
2For the substrate protective seam 11 of main body between the centre, driving transistors 62 is set on the surface of substrate 1.On the upper strata of substrate protective seam 11, form silicon layer 621.Therefore, driving transistors 62 becomes the transistor of N channel-type.Gate insulator 12 covers the upper strata that silicon layer 621 ground are arranged on substrate protective seam 11.The part relative with silicon layer 621 on gate insulator 12 is provided with gate electrode 623.Do media by this gate electrode 623, the V group element that mixes in silicon layer 621 forms drain region 621a and source area 621c.Here, the zone of the V group element that do not mix forms channel region 621b.The 1st interlayer insulating film 13, covering grid electrode 623 ground form on the upper strata of gate insulator 12.And then drain electrode 622 is done media by the contact hole that spreads all over gate insulator 12 and 13 perforates of the 1st interlayer insulating film, and 621a is connected with the drain region.On the other hand, source electrode 624 clips gate electrode 623, is provided with on the position relative with drain electrode 622, does media by the contact hole that spreads all over gate insulator 12 and 13 perforates of the 1st interlayer insulating film, and 621c is connected with source area.The 2nd interlayer insulating film 14 covers drain electrode 622 and source electrode 624 ground and forms on the upper strata of the 1st interlayer insulating film 13.
In addition, keep transistor 61, comprise silicon layer 611, gate insulator 12, gate electrode the 613, the 1st interlayer insulating film the 13, the 1st leakage/source electrode the 612, the 2nd leakage/source electrode 614 too.But, in silicon layer 611, do media by this gate electrode 613, doped with II I family element forms the 1st leakage/source region 611a and the 2nd leakage/source region 611c.Here, the zone of doped with II I family element does not form channel region 611b.Keep transistor 61, become the transistor of P channel-type.
And then the gate electrode 623 of driving transistors 62 is done media by connecting wiring 63, is connected with the 1st leakage/source electrode 612 that keeps transistor 61.This routine connecting wiring 63 constitutes (with reference to Fig. 6 and Fig. 7) by the 1st wiring the 631 and the 1st wiring 632.The 1st wiring 631 is used after the wiring that drain electrode 622 and source electrode 624 with the 1st leakage/source electrode 612 that keeps transistor 61 and the 2nd leakage/source electrode 614 and driving transistors 62 form with layer to form; The 2nd wiring 632 is used forming after layer wiring that forms together with gate electrode 623 and 613.
In addition, in the surface of the 1st interlayer insulating film 13, be provided with between the part and negative electrode 645 beyond the OLED element 64, the next door 15 that is made of synthetic resin etc. is set.In addition, next door 15 can also form them between the OLED element 64 that is provided with on each driving transistors 62 spaced-apartly.Anode 641 has function from the hole to luminescent layer 60 that supply with, uses the transparent conductive material of ITO (indium tin oxide) and indium oxide, Zinc oxide amorphous transparent conductive film (Indium Zinc Oxide:IZO (registered trademark)) etc.What anode 641 also comprised above-mentioned various materials contains gold and laminated plate.Negative electrode 645 is in order to improve electron injection efficiency, and constitutes with the metallic element (for example: alkaline metal, alkaline-earth metal, magnesium, rare earth metal (except the Pm), aluminium) of low work function.In addition, negative electrode 645, preferably light reflective or opaque conductive material.In this example, adopt from the come out structure (bottom emissive type) of light of spontaneous photosphere 643 of anode 641 1 side-draws.But also can adopt the structure (top emission structure) that goes out it from negative electrode 645 1 side-draws.
Here, negative electrode 645 does not cover the integral body of the 2nd insulation course 14, and only covers its part.Specifically, 645 zones in the arrow A of Figure 6 and Figure 7 of negative electrode form, and do not form in the zone of data line L0～L127 and maintenance transistor 61.Like this, why do not make negative electrode 645 overlapping, exactly in order to reduce stray capacitance with data line L0～L127 and maintenance transistor 61.Data line L0～L127 forms in the manufacturing process identical with the drain electrode 622 of the 1st leakage/source electrode the 612, the 2nd leakage/source electrode 614 that keeps transistor 61 and driving transistors 62 and source electrode 624.Therefore, if make negative electrode 645 cover the 2nd insulation course 14 comprehensively, between negative electrode 645 and data line L0～L127, will produce stray capacitance so.Owing to the light-emitting device of present embodiment, be used as the head 10 of printer, so it is the length of data line L0～L127 is longer, bigger by its subsidiary stray capacitance.Under the effect of this stray capacitance, the load of seeing from impact damper portion 30 just becomes big.Therefore, do not form negative electrode 645 in the zone of data line L0～L127.Like this, just can during limited selection, write data-signal D0～127 conscientiously, and then can also shorten the time delay of data-signal D0～127 significantly.
On the other hand, because negative electrode 645 is relative with the part of connecting wiring 63, so between them, will produce stray capacitance.Form the maintenance capacitor C by this stray capacitance.During selecting, keep transistor 61 to become on-state, data-signal writes the maintenance capacitor C.Then, although finish, keep transistor 61 to become off-state during selecting, the voltage of data-signal also still is held capacitor C and keeps.Like this, after driving transistors 62 finishes during certain is selected before begin during the next one is selected during in, also can with fixed current supply OLED element 64.In addition, in this embodiment, negative electrode 645 is relative with the part of connecting wiring 63, but depends on the capacitance by the maintenance capacitor C of the regulations such as length during keeping till where both overlap onto.Therefore, can be with negative electrode 645 and connecting wiring 63 whole relative.
In addition, on the angle of eliminating noise, can on connecting wiring 63, resistive element be set.At this moment, resistive element is preferably among the scope B shown in Figure 6 and is provided with.In other words, in not relative zone resistive element is set with negative electrode 645.If with negative electrode 645 relative regional A resistive element is set, keep the capacitance of capacitor C to reduce at connecting wiring 63.Cause exists, and after both not relative zones are provided with resistive element, can form the maintenance capacitor C effectively.
Fig. 8 is the sectional view of Z2-Z2 ' line shown in Figure 6.As shown in the drawing, the 1st power-supply wiring Ld is made of the 1st layer of wiring F1 and the 2nd layer of wiring F2, and they are done media by contact hole and are connected.In addition, the 2nd power-supply wiring Ls is made of the 2nd layer of wiring F2 and the 3rd layer of wiring F3, and they are done media by contact hole and are connected.Here, the 1st layer of wiring F1 with keep transistor 61 and driving transistors 62 in formation gate electrode layer corresponding.Here, the 2nd layer of wiring F2 with keep transistor 61 and driving transistors 62 in formation source/drain electrode layer corresponding.The 3rd layer of wiring F3 is corresponding with the negative electrode 645 of OLED element 64.Next door 15 is provided with between the 2nd layer of wiring F2 and the 3rd layer of wiring F3, as both the 2nd interlayer insulating films of insulation are played a role.The 1st layer of wiring F1, the 2nd layer of wiring F2 and keep transistor 61 and transistors such as driving transistors 62 form together; The 3rd layer of wiring F3 and OLED element 64 form together.Like this, with the 1st power-supply wiring Ld and the 2nd power-supply wiring Ls as stepped construction after, can reduce the impedance of power-supply wiring, can supply with the 1st stable power supply voltage signal VDDEL and the 2nd power supply voltage signal VSSEL.Here, the 2nd layer of wiring F2 used the 1st power-supply wiring Ld and the 2nd power-supply wiring Ls dual-purpose.So, because the 1st layer of wiring F1, the 2nd layer of wiring F2 and the 3rd layer of wiring F3, form together with transistor and OLED element 64, thus can not increase operation quantity ground with the 1st power-supply wiring Ld and the 2nd power-supply wiring Ls respectively as forming after the stepped construction that constitutes by the two layers of wiring layer.Like this, need not form easy structure for power-supply wiring is made stepped construction and special layer is set.In addition, also can the be stacked corresponding layer of the 2nd power-supply wiring Ls with the anode 641 of OLED element 64.Like this, can further reduce the impedance of power-supply wiring.
Figure 11 illustrates the contour structures of head 10.In this embodiment, head 10 (light-emitting device) seal member 2 that has substrate 1 and on substrate 1, be provided with.Figure 12 is the sectional view with an example of the section of S～S ' line cut-out head 10.In the area E 1 shown in this figure, form data line L0～L127.In area E 2, form the wiring 50a of the power supply voltage signal VLL that supplies with low potential side.In area E 3, form data line drive circuit 50.In area E 4, form the wiring 50b of the power supply voltage signal VHH that supplies with hot side.
As shown in figure 12, substrate 1 has the 1st end face S1 and the 2nd end face S2.And, on substrate 1,, disposing data line drive circuit 50, data line L0～L127 successively, keeping transistor 61, OLED element 64, driving transistors 62, power lead Ld and power lead Ls between the 1st end face S1 to the 2 end face S2.In addition, seal member 2 cover data line drive circuits 50, data line L0～L127, maintenance transistor 61, OLED element 64, driving transistors 62, power lead Ld and power lead Ls ground are connected with substrate 1.As shown in figure 12, seal member 2 has board 2a and the 2b of frame portion.Board 2a is arranged on the position relative with OLED element 64 grades that are provided with on the substrate.The 2b of frame portion then does media by bonding agent 22, with substrate 1 bonding agent together.In addition, 2 of substrate 1 and seal members bond together by the 2b of frame portion, between OLED element 64 that is provided with on the substrate and board 2a, seal cavity 23 are being set.Inject not active gases and liquid etc. such as dry nitrogen to this space, can prevent that luminescent layer 60 and negative electrode 645 etc. are because of deteriorations such as oxygen or moisture.In addition, can also in seal cavity 23, dispose drying agent etc.In this embodiment, adopted this so-called jar of sealing.In addition, also can adopt the sealing of diaphragm seal and substrate bonding.In diaphragm seal,, can on OLED element 64, form films such as the monox that adopts chemical vapor deposition method etc. to form, silicon nitride for example as seal member 2.In substrate bonding sealing, can will be bonding as the substrate and the substrate 1 of the glass of seal member 2 etc. by the bonding agent that on OLED element 64, disposes.Here, substrate 1 and seal member 2, bonding in the part of the organic material that does not form next door 15 grades.Like this, can prevent oxygen and moisture etc. to invade hermetically sealed space from the outside.
The luminescent layer 643 of OLED element 64 contains luminescent materials such as conductive poly zoarium and monomer.This luminescent material has easy oxidation, contact the character that the back characteristic will deterioration with oxygen.In addition, negative electrode 645 will inject electronics, so select the work function materials with smaller for use.This material for example comprises calcium etc., after the water reaction of invading from the outside, forms the hydroxide film easily.After forming the hydroxide film, just be unfavorable for injecting electronics.
In configuration shown in Figure 12, keeping configuration OLED element 64 between transistor 61 and the driving transistors 62, and then, keeping configuration data line L0～L127 and data line drive circuit 50 between transistor 61 and the 1st end face F1, configuration power lead Ld and power lead Ls between driving transistors 62 and the 2nd end face F2.Therefore, OLED element 64 can be configured near the central authorities of substrate 1.Its result can improve reliability.
In addition, negative electrode 645 is not because dispose in keeping transistor 61 and area E 1～E4, so be not vulnerable to from the influence of the gas of the 1st end face S1 one side intrusion.Like this, can reduce by negative 645 deterioration in characteristics, can improve reliability.
In Figure 13, illustrate and use S-S ' line to cut off other example of the section behind the head 10.The difference of this example and Figure 12 is the configuration counter-rotating of power lead Ls and power lead Ld.Be that the power lead Ls that negative electrode 645 connects is configured in than power lead Ld on the 2nd end face S2 position far away.At this moment, the drain electrode 622 of power lead Ld and driving transistors 62 is done media by grid wiring and is connected.After adopting this configuration, be not vulnerable to from the influence of the gas of the 2nd end face F2 one side intrusion.Like this, can reduce by negative 645 deterioration in characteristics, can improve reliability.
＜image processing system 〉
Fig. 9 is the vertical disconnected side view of an example of the expression image processing system that uses above-mentioned head 10.This image processing system, be organic EL array exposure head 10K, 10C, 10M, the 10Y that will have 4 same structures, be configured in respectively on the exposure position of the corresponding photoreceptor with 4 same structures (as being loaded with body) 110K, 110C, 110M, 110Y, constitute the image processing system of random fashion.Organic EL array exposure head 10K, 10C, 10M, 10Y are made of above-mentioned head 10.
As shown in Figure 9, this image processing system is being provided with driving rolls 121 and return idler 122, has the intermediate duplication band 120 that drives to the circulation of the diagram direction of arrow.As 4 pictures of this intermediate duplication band 120 with decided arranged spaced are loaded with on the outer peripheral face of body, preparing photoreceptor 110K, 110C, 110M, 110Y with photographic layer.Additional K, C, M, Y after described symbol refers to black, bluish-green, fuchsin, yellow respectively, represents the photoreceptor of black, bluish-green, fuchsin, yellow usefulness respectively.Other parts too. Photoreceptor 110K, 110C, 110M, 110Y are synchronously rotated driving with the driving of intermediate duplication band 120.
Around each photoreceptor 110 (K, C, M, Y), the equally charged charged elements (corona charging device) 111 (K, C, M, Y) of outer peripheral face that makes photoreceptor 110 (K, C, M, Y) is being set, with the outer peripheral face that makes at next belt transect electricity of effect of this charged elements 111 (K, C, M, Y), synchronous with the rotation of photoreceptor 110 (K, C, M, Y), the of the present invention above-mentioned the sort of organic EL array exposure head 10 (K, C, M, Y) of line scanning successively.
In addition, have and give the electrostatic latent image developer that forms with this organic EL array exposure head 10 (K, C, M, Y)---behind the ink powder, but as the developing apparatus 114 (K, C, M, Y) of video (ink powder resembles).
Here, each organic EL array exposure head 10 (K, C, M, Y) is configured to the bus of the array direction of organic EL array exposure head 10 (K, C, M, Y) along photoreceptor 110 (K, C, M, Y).And the luminous energy peak wavelength of organic EL array exposure head 10 (K, C, M, Y) is set for roughly consistent with the sensitivity peaks wavelength of photoreceptor 110 (K, C, M, Y).
Developing apparatus 114 (K, C, M, Y), for example, as developer, use a non magnetic composition ink powder, this component developer is for example carried to the development roller with supplying with roller, with adjusting the thickness of plate adjustment attached to the developer of development roller surface, make this development roller contact or extruding photoreceptor 110 (K, C, M, Y), potential level according to photoreceptor 110 (K, C, M, Y) makes developer attached thereto, thereby resembles development as ink powder.
Become black that station forms, bluish-green, fuchsin, each yellow ink powder to resemble by the monochromatic ink powder pictograph of this 4 looks, once duplicated successively on the intermediate duplication band 120, on the intermediate duplication band 120 by after overlapping successively, become panchromatic.Under the effect of sensing roller 103, one piece of recording medium 102 that one piece of ground is sent out from give carton 101 is duplicated roller 126 by secondary and is carried.Ink powder on the intermediate duplication band 120 resembles, and duplicates in the roller 126 at secondary, duplicated by recording mediums such as dedicated paper 102 secondaries, by photographic fixing portion---and after the photographic fixing pair of rollers 127, photographic fixing on recording medium 102.Then, line paper rolling wheel to 128 effect under, recording medium 102 is sent on the discharge tray that forms on device top.
Like this, the image processing system of Fig. 9 as writing unit, uses organic EL array, so compare miniaturization that can implement device when using the laser scanning optical system.
Below, tell about other embodiment of the image processing system that the present invention relates to.
Figure 10 is the vertical disconnected side view of image processing system.In Figure 10, as the main composition parts, the photoreceptor 165, the photohead 167 of being arranged to organic EL array, intermediate duplication band 169, dedicated paper induction system 174, the heating roller 172 of fuser, the paper feeding tray 178 that in image processing system, are provided with the developing apparatus 161 of rotating mechanism, play a role as the carrier of elephant.Photohead 167 is made of above-mentioned head 10.
The development rotating mechanism 161a of developing apparatus 161 is the center with axle 161b, to rotation counterclockwise.The inside of development rotating mechanism 161a is divided into 4 parts, and the pictograph that yellow (Y), bluish-green (C), fuchsin (M), black 4 looks such as (K) are being set respectively becomes the unit.Development roller 162a～162d and ink powder are supplied with roller 163a～163d, and each pictograph at described 4 looks becomes in the assembly to dispose respectively.In addition, ink powder be adjusted plate 164a～164d be adjusted to fixed thickness.
In dedicated paper induction system 174, a plurality of conveying rollers and line paper rolling wheel are being set to 176 etc., carry dedicated paper.Image (ink powder resembles) by the single face of intermediate duplication band 169 carryings duplicates the position of roller 171 by the simplex copying of dedicated paper at secondary.Secondary duplicates roller 171 under the effect of clutch coupling, with 169 clutches of intermediate duplication band, when clutch coupling is connected, join with intermediate duplication band 169, with IMAGE REPRODUCTION to dedicated paper.
As mentioned above, be replicated visual dedicated paper, then carried out photographic fixing and handle with fuser with fixing heater.In fuser, heating roller 172, pressure roller 173 are being set.Dedicated paper after photographic fixing is handled, line paper rolling wheel to 176 effect under, advance to the direction shown in the arrow F.After line paper rolling wheel rotated from this state in the opposite direction to 176, dedicated paper just clubhauled, and advanced towards the direction of arrow G in the two sides is printed with induction system 175.Dedicated paper is taken out by one piece one piece ground from paper feeding tray 178 under the effect of sensing roller 179.
In the dedicated paper induction system, drive the right driving motor of conveying roller, for example use the non-carbonate motor of low speed.In addition, intermediate duplication band 169 is owing to need to revise color and stagger etc., so use stepping motor.These motor all are subjected to the control from the signal of not shown control module.
In illustrated state, on photoreceptor reel 165, form the electrostatic latent image of yellow (Y), development roller 128a by applying high voltage after, on photoreceptor reel 165, just form yellow image.All by after 169 carryings of intermediate duplication band, development rotating mechanism 161a revolves and turn 90 degrees for the yellow inboard and the image in the outside.
After intermediate duplication band 169 revolves and turns around, return the position of photoreceptor reel 165.Then form 2 the image of bluish-green (C) on photoreceptor reel 165, this image is by the yellow picture overlapping carrying of intermediate duplication band 169 carryings.Below, make development rotational structure 161 rotate 90 degree equally repeatedly, carry out 1 rotation processing behind the image bearing of intermediate duplication band 169.
In order to carry the color image of 4 looks, with intermediate duplication band 169 rotations 4 times, then, control position of rotation once more, duplicate position replicated image on industrial siding of roller 171 at secondary.Carry the dedicated paper of being supplied with by paper feeding tray 178 with induction system 174, the position of duplicating roller 171 at secondary is to the described color image of the simplex copying of dedicated paper.Duplicated the dedicated paper of color image on the single face, as previously mentioned, reversed standby on landline to 176 with line paper rolling wheel.Then,, dedicated paper is transported to the position that secondary duplicates roller 171, duplicates described color image to another side in the suitable moment.In shell 180, vent fan 181 is being set.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2004218272 | 2004-07-27 | ||
| JP2004218272 | 2004-07-27 | ||
| JP2004-218272 | 2004-07-27 | ||
| JP2005050324 | 2005-02-25 | ||
| JP2005050324A JP4193805B2 (en) | 2004-07-27 | 2005-02-25 | Light emitting device and image forming apparatus |
| JP2005-050324 | 2005-02-25 |
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| CN200810145428XA Division CN101330781B (en) | 2004-07-27 | 2005-06-13 | Light-emitting device |
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| CNB2005100780409A Active CN100421144C (en) | 2004-07-27 | 2005-06-13 | Light emitting device and image forming device |
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| JP (1) | JP4193805B2 (en) |
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| US11929012B2 (en) * | 2021-02-22 | 2024-03-12 | Samsung Electronics Co., Ltd. | Display module and display apparatus having the same |
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| US4478504A (en) * | 1981-12-22 | 1984-10-23 | Minolta Camera Kabushiki Kaisha | Electrostatic recording apparatus |
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| JPH0557953A (en) | 1991-08-29 | 1993-03-09 | Toshiba Corp | Optical printer head |
| FR2685817B1 (en) * | 1991-12-31 | 1994-03-11 | Sgs Thomson Microelectronics Sa | GENERAL PROTECTION OF AN INTEGRATED CIRCUIT AGAINST PERMANENT OVERLOADS AND ELECTROSTATIC DISCHARGES. |
| US7288420B1 (en) * | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
| JP4550958B2 (en) * | 1999-11-16 | 2010-09-22 | 株式会社沖データ | Driving circuit |
| US6307322B1 (en) * | 1999-12-28 | 2001-10-23 | Sarnoff Corporation | Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage |
| JP4360015B2 (en) * | 2000-03-17 | 2009-11-11 | セイコーエプソン株式会社 | Method for manufacturing organic EL display, method for arranging semiconductor element, method for manufacturing semiconductor device |
| TW521226B (en) * | 2000-03-27 | 2003-02-21 | Semiconductor Energy Lab | Electro-optical device |
| TW493282B (en) | 2000-04-17 | 2002-07-01 | Semiconductor Energy Lab | Self-luminous device and electric machine using the same |
| JP4889872B2 (en) | 2000-04-17 | 2012-03-07 | 株式会社半導体エネルギー研究所 | Light emitting device and electric appliance using the same |
| US6723576B2 (en) * | 2000-06-30 | 2004-04-20 | Seiko Epson Corporation | Disposing method for semiconductor elements |
| JP2002287665A (en) | 2001-03-26 | 2002-10-04 | Sharp Corp | Memory integrated display substrate and display device and memory cell array |
| JP5019677B2 (en) | 2001-06-25 | 2012-09-05 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method thereof |
| JP4103373B2 (en) | 2001-11-08 | 2008-06-18 | 松下電器産業株式会社 | Electroluminescence display device and method of manufacturing electroluminescence display device |
| JP3799266B2 (en) * | 2001-11-15 | 2006-07-19 | 富士通株式会社 | Noise light removal method, noise light removal apparatus and optical transmission system using stimulated Brillouin scattering |
| KR100508296B1 (en) * | 2002-02-01 | 2005-08-17 | 세이코 엡슨 가부시키가이샤 | Circuit board, electrooptical device and electronic appliances |
| JP2004118013A (en) * | 2002-09-27 | 2004-04-15 | Sanyo Electric Co Ltd | Display device |
| JP2006066871A (en) * | 2004-07-27 | 2006-03-09 | Seiko Epson Corp | LIGHT EMITTING DEVICE, IMAGE FORMING DEVICE, AND DISPLAY DEVICE |
| JP4193805B2 (en) * | 2004-07-27 | 2008-12-10 | セイコーエプソン株式会社 | Light emitting device and image forming apparatus |
-
2005
- 2005-02-25 JP JP2005050324A patent/JP4193805B2/en not_active Expired - Lifetime
- 2005-04-25 US US11/113,192 patent/US7397491B2/en active Active
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- 2005-06-02 TW TW094118204A patent/TWI298475B/en active
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- 2005-06-13 CN CNB2005100780409A patent/CN100421144C/en active Active
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| US7397491B2 (en) | 2008-07-08 |
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| TWI298475B (en) | 2008-07-01 |
| US7663655B2 (en) | 2010-02-16 |
| CN101330781A (en) | 2008-12-24 |
| US20060022601A1 (en) | 2006-02-02 |
| CN100421144C (en) | 2008-09-24 |
| CN101330781B (en) | 2010-10-27 |
| US20090002473A1 (en) | 2009-01-01 |
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| JP2006065280A (en) | 2006-03-09 |
| KR100655875B1 (en) | 2006-12-11 |
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Effective date of registration: 20240116 Address after: Ai Erlandubailin Patentee after: Lumitec Display Technology Co.,Ltd. Address before: Tokyo Patentee before: Seiko Epson Corp. |
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