CN1674372A - Polygonal high-power semiconductor laser laminated array module - Google Patents

Abstract

A polygonal high-power semiconductor laser stacked array module is composed of: in a polygonal cylinder, each side is a trapezoidal semiconductor laser assembly in the shape of a trapezoidal strip with the same structure, the top surface of each trapezoidal strip faces inward, and from the inside to the outside, the contact electrode, the secondary heat sink and the heat sink strip are closely fitted together, and the central part of the top surface of the contact electrode is a plurality of high-power semiconductor laser line arrays arranged axially, and the plurality of trapezoidal semiconductor laser assemblies are fixed on a water cooling device, and the contact electrode is led out from the water cooling device through a connecting electrode and an insulating gasket. The present invention has the characteristics of uniform distribution of pump light sources, high pump efficiency, protection of the cavity surface of the high-power semiconductor laser array, simple structure, low cost, and easy replacement.

Description

Polygonal high-power semiconductor laser stacked array module

technical field

The invention relates to a semiconductor laser, in particular to a polygonal high-power semiconductor laser stacked array module.

Background technique

Due to the advantages of small size, light weight, high conversion efficiency, and low price, high-power semiconductor lasers are mainly used to pump various It is a solid-state laser medium, and it is also widely used in laser medical treatment.

At present, the pumping forms of solid-state laser media mainly include end pumping of circular rods, side pumping of circular rods, and planar pumping in the form of slabs. When pumping a solid-state laser with a flash lamp, most of the pump energy cannot be used by the laser crystal because the pump spectral line characteristics do not completely match the absorption characteristics of the active medium, and the spectral bandwidth of the flash lamp is much larger than the absorption bandwidth of the laser crystal. Therefore, the conversion efficiency of the solid-state laser medium is low, and the electro-optical conversion efficiency of the flash lamp is only 0.1-5%. The semiconductor laser is used instead of the flash lamp as the pumping source of the solid-state laser medium. Since the spectral linewidth of the semiconductor laser is relatively narrow, when the center wavelength of the semiconductor laser is in the absorption band of the solid-state laser medium, the conversion efficiency of the solid-state laser medium is high, so that the laser The performance of the laser is greatly improved, and the pumping of the semiconductor laser replaces the pumping of the gas lamp, and the components that make up the laser are all solid devices, thus realizing a fully solidified form. However, using a semiconductor laser as a pump source, in the side pumping of a circular rod, the circular solid laser medium has the disadvantages of low absorption efficiency and uneven absorption of the pump light of the high-power semiconductor laser array with a planar structure. The efficiency is also very low, and the output beam quality of the laser crystal medium is poor; in the patent No. ZL01220203.7 named semiconductor laser array with a semi-cylindrical light-emitting surface, there is a circular solid dielectric rod for its pumping light. The problem of uneven absorption, there is no cooling structure in the patent No. ZL02110983.4 of the high-power semiconductor laser module named linear array structure, and it cannot work under high duty cycle. Several linear arrays are assembled at the same time On the semicircular heat sink, if a semiconductor laser line array is damaged, the entire module will fail, increasing its use cost; the output lasers of the semiconductor laser arrays in the circular high-power semiconductor laser array may affect each other (no solid When the laser dielectric rod is used), the cavity surface of the pump source of the semiconductor laser array is damaged, thereby reducing the life of the pump source.

Contents of the invention

The purpose of the present invention is to overcome the shortcomings in the above-mentioned existing pumping technology, and provide a polygonal high-power semiconductor laser stacked array module, which can efficiently pump solid-state laser media, and has uniform distribution of pumping light sources and high pumping efficiency. It has the advantages of being high and protecting the laser irradiation on the cavity surface of the high-power semiconductor laser array, and at the same time it has the characteristics of simple structure, low cost, and easy replacement of components that make up the module.

Technical scheme of the present invention is realized like this:

A polygonal high-power semiconductor laser laminated array module is characterized in that its composition is:

In a polygonal cylinder, each side is a trapezoidal semiconductor laser component with the same structure, the top of each trapezoidal block faces inward, and from the inside to the outside, there are contact electrodes, sub-heat sinks and heat sinks in sequence The bars are closely attached together, and the central part of the top surface of the contact electrode is a plurality of high-power semiconductor laser line arrays arranged horizontally in the axial direction, and the plurality of trapezoidal semiconductor laser components are fixed on a water cooling device, so The above-mentioned contact electrodes are led out from the water cooling device through the connection electrodes and insulating pads.

The trapezoidal semiconductor laser assembly can be replaced separately.

Compared with the prior art, the present invention has the following obvious advantages:

1. In the present invention, the planar pump source of the high-power semiconductor laser assembly is designed into a polygonal structure, which can make the solid-state laser dielectric rod obtain symmetrical and uniform pumping, and improve the pumping efficiency.

2. The multiple trapezoidal semiconductor laser components separated in the present invention can be replaced arbitrarily, which avoids the disadvantage that the failure of one trapezoidal semiconductor laser component causes the failure of the entire module and is difficult to repair.

3. In the present invention, the lasers output by the high-power semiconductor laser line array are not directly irradiated with each other, which avoids the shortcoming of shortening the service life due to direct laser irradiation.

4. The module of the present invention is composed of a plurality of trapezoidal semiconductor laser components with planar structure, so it has the advantages of economy and convenience.

Description of drawings

FIG. 1 is a schematic structural diagram of a polygonal high-power semiconductor laser stacked array module embodiment of the present invention—a pentagonal high-power semiconductor laser stacked array module.

Fig. 2 is a schematic diagram of a trapezoidal semiconductor laser assembly of the present invention.

Detailed ways

The high-power semiconductor laser stacked array module of the present invention will be further described below in conjunction with the drawings and embodiments.

Example 1

First please refer to Fig. 1 and Fig. 2, it can be seen from the figures that the polygonal high-power semiconductor laser stacked array module of the present invention is composed of:

In a pentagonal cylinder, each side is a trapezoidal semiconductor laser assembly with the same structure, the top surface of each trapezoidal block faces inward, and the contact electrode 2 and the secondary heat sink are sequentially arranged from the inside to the outside. 3 and the heat sink 4 blocks are closely attached together, and in the central part of the upper surface of the contact electrode 2 is a plurality of high-power semiconductor laser line arrays 1 arranged horizontally in the axial direction, and the plurality of trapezoidal semiconductor laser components are fixed On a water cooling device 5 , the contact electrode 2 is led out from the water cooling device 5 through the connection electrode 6 and the insulating gasket 7 .

The trapezoidal semiconductor laser assembly can be replaced separately.

When in use, the solid laser dielectric rod 8 is placed in the center of the polygonal high-power semiconductor laser stacked array module through external components.

The working principle of the present invention is as follows:

Connect the external high-power semiconductor laser power supply (not shown) through two connection electrodes 6, and apply voltage to the multiple high-power semiconductor laser line arrays 1 connected in series in the polygonal high-power semiconductor laser array stack module, so that the high-power The laser emitted by the semiconductor laser line array 1 pumps the solid laser dielectric rod 8 . The heat generated by the polygonal high-power semiconductor laser array stack module is taken away by the constant-temperature circulating water in the water cooling device 5, so as to play the role of cooling and heat dissipation, so that the module can work under high duty cycle conditions.

In the present invention, the semiconductor laser assembly—consisting of the contact electrode 2, the sub-heat sink 3, and the heat sink 4—can be designed according to the diameter of the solid laser dielectric rod 8, and the stacked module can be used for pumping with a minimum diameter of Solid-state laser dielectric rods of 4mm or more.

A polygonal high-power semiconductor laser stacked array module, including a trapezoidal semiconductor laser assembly composed of a high-power semiconductor laser line array 1, a contact electrode 2, a sub-heat sink 3 and a heat sink 4, as shown in Figure 2, a water-cooling device 5, connecting Electrode 6, insulating spacer 7 and solid laser medium 8. In the first step, several high-power semiconductor laser line arrays with the same or similar characteristics (threshold current, lasing wavelength, slope efficiency, and output power) face up, and are sintered on the insulating secondary with solder with a higher melting point. On the heat sink 3 (the material can be AlN, Si, diamond or BeO), and then use low-temperature solder to sinter the solidly sintered insulating sub-heat sink to the trapezoidal metal generally composed of tungsten copper, oxygen-free copper and other materials with high thermal conductivity. The trapezoidal semiconductor laser assembly is formed on the heat sink 4. In this step of sintering, the insulating sub-heat sink 3 and the metal trapezoidal heat sink 4 can also be sintered together with solder with a higher melting point, and then several large lasers with the same characteristics can be sintered together with low-temperature solder. The power semiconductor laser line array 1, the contact electrode 2, the sub-heat sink 3 and the heat sink 4 are sintered to form a trapezoidal semiconductor laser assembly. In the second step, multiple trapezoidal semiconductor laser components with the same or similar characteristics after aging screening are installed on the water cooling device in a certain direction. In the third step, two connecting electrodes 6 and three insulating pads 7 are used to lead out the positive and negative electrodes of the semiconductor laser stacked array module. Finally, the solid laser dielectric rod 8 to be pumped is installed at the center of the high-power semiconductor laser stacked array module. According to the length of the solid laser medium, multiple high-power semiconductor laser stacked array modules can be installed along the rod length direction.

Example 2:

Ten trapezoidal semiconductor laser components (each component is composed of three high-power semiconductor laser line arrays 1) are composed of thirty high-power semiconductor laser line arrays 1 (output peak power ≥ 100W), and the ten trapezoidal semiconductor laser The laser components are connected in series in series and fixed on the water cooling device 5. The current is input from one of the connecting electrodes 6, flows through each high-power semiconductor laser line array 1, and is output from the other connecting electrode 6. The direction constitutes two high-power semiconductor laser stacked array modules sharing a water-cooling device, and pumps a solid-state laser dielectric rod with a radius of 6mm. The total output peak power of two high-power semiconductor laser stacked array modules is ≥3000W.

Claims (2)

1, a kind of polygonal large power semiconductor laser laminated array module is characterised in that its formation is:

In a polygon cylindrical shell, each limit is the trapezoidal semiconductor laser elements of the identical trapezoidal strip and block of a structure, the end face of each trapezoidal stick inwardly, be contact electrode (2) from the inside to the outside successively, inferior heat sink (3) and heat sink (4) stick fits tightly together, middle body at the end face of described contact electrode (2) is many high power semiconductor lasers linear arrays (1) of axial horizontally-arranged, these a plurality of trapezoidal semiconductor laser elements are fixed on the water cooling plant (5), described contact electrode (2) by connection electrode (6) and insulation spacer (7) by drawing on the water cooling plant (5).

2, polygonal large power semiconductor laser laminated array module according to claim 1 is characterized in that described trapezoidal semiconductor laser elements can change separately.

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