CN1668915B - Method and apparatus for determining characteristics of structural element interface having sub-micron cross-sectional area - Google Patents
Method and apparatus for determining characteristics of structural element interface having sub-micron cross-sectional area Download PDFInfo
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- CN1668915B CN1668915B CN038164191A CN03816419A CN1668915B CN 1668915 B CN1668915 B CN 1668915B CN 038164191 A CN038164191 A CN 038164191A CN 03816419 A CN03816419 A CN 03816419A CN 1668915 B CN1668915 B CN 1668915B
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Abstract
提供一种用于判定一具有一次微米截面的结构元件的截面特征的方法及系统，该截面是由一位于一第一及一第二横切段间的中间段所界定出。该方法包括下列步骤：(a)回应一倾斜一或多个对应倾斜角(例如照射至少该上方段及一第一横断面)的电子束对该结构元件进行的一或多次扫描，来判定一第一横切段截面特征；(b)回应该第一参数值决定是否进行(i)回应该第一横切截面特征判定一第二横切段截面特征，或(ii)回应以一倾斜一或多个对应倾斜角(例如照射至少该上方段及该第二横断面)的电子束对该结构元件进行的一或多次扫描，来判定该第二横切段截面特征；以及(c)回应该选择结果，判定该第二横切段截面特征。
A method and system are provided for determining the cross-sectional characteristics of a structural element having a sub-micron cross-section defined by an intermediate segment between a first and a second transverse segment. The method comprises the steps of: (a) determining one or more scans of the structural element in response to an electron beam tilted at one or more corresponding tilt angles (e.g. illuminating at least the upper section and a first transverse section) to determine (b) determine whether to respond to the first parameter value to determine whether to perform (i) determine a second cross-sectional feature in response to the first cross-sectional feature, or (ii) respond with an inclined one or more scans of the structural element by an electron beam corresponding to one or more oblique angles (for example, illuminating at least the upper section and the second cross-section) to determine the cross-sectional characteristics of the second cross-section; and (c ) in response to the selection result, and determine the cross-sectional characteristics of the second transverse section.
Description
Technical field
The invention relates to the system and method that is used to detect object (such as but not limited to semiconductor wafer, photolithography plate (reticle)) during the manufacturing, clearer and more definite, be the structural detail that is used to detect as data line, contact hole, irrigation canals and ditches and fellow.
Background technology
Integrated circuit is a kind ofly to comprise many layers and very complicated element.Each layer may comprise conductive material, insulating material, and other layers can comprise semiconductor material simultaneously.These different materials are by pattern setting, normally desire function according to integrated circuit and decide.Pattern also reflects the manufacturing course of integrated circuit usually.
Integrated circuit is made by the multistage manufacturing course of complexity.During this multistage processing procedure, resistance material is that (i) is deposited on the substrate/layer; (ii) mat photolithographic processes exposure; (iii) develop and desire to carry out etched pattern subsequently to form to define.
Different detections and defect analysis technology had developed already during fabrication phase, continuous fabrication phase integrated circuit is detected, and no matter were to combine (being also referred to as " on the line " detection technique) or not combination (being also referred to as " off-line " detection technique) with the manufacturing processing procedure.Various optics and charge-particle beam testing tool and inspection formula instrument are all known by industry, for example VersSEMTM, ComplussTM and the SEMVisionTM of the holy Plutarch La La in California city US business Applied Materials.
Manufacturing defect can influence the characteristic electron of integrated circuit.Many these defectives can cause not happy deviation of seeing occurring by required pattern dimension." critical size " typically refers to the width, the distance between two patterned metal lines, the width and the fellow of contact hole of patterned line.
One of purpose of inspection process is to judge whether the object that is detected waits critical size deviation to occur thus.This detection is measured aforementioned deviation by the charge-particle beam imaging that high-res can be provided usually.
The structural detail that the typical case detects is the metal wire with two opposite side walls.The measurement of metal wire bottom width comprises top width and the sidewall thereof of measuring this metal wire.
Only use the critical size defective a bit overlook mode (referring to that the electron beam that scans metal wire is perpendicular to base material) measurement structure element metallic, especially occur bearing side wall angle and more obvious when making the upper end of this sidewall cover this side wall lower ends at one of these sidewalls.
For handling aforementioned out of true shortcoming, be the CD-SEM instrument that proposes energy electrical tilt one electron beam.NanoSem 3D by the listing of merchant Applied Materials of Sheng Takela Latin America is a kind of full-automatic CD-SEM, but it has the column of an electrical tilt and mechanical tilt scanning electron bundle, to press differing tilt angles by several scanning direction wafer surface.
Critical size is measured and can be comprised that mat multi-angle oblique electron beam shines a test article and handles this waveform through detecting to define critical size.
Rapid also some shortcoming of possibility of measuring of multistep, at first, they can reduce the productive rate of detection system, and are especially more obvious when measurement comprises the inclination that changes scanning beam, Gauss's stage (de-Gauess stage) can fall in such change, and an electron beam stabilization sub stage.Rapid another shortcoming measured of multistep be result from tested structural detail degradation (for example shrinking or carbonization) and should tested structural detail occur do not find pleasure in the charged phenomenon of seeing.
Summary of the invention
The present invention provides multiple sweeping scheme with the required measurement number of times of the section feature that can effectively reduce the decision structure element.The present invention provides and a kind ofly is used to judge that one has time method of the section feature of the structural detail of micron sectional area (this sectional dimension is less than a micron at least), and this sectional area is defined by an interlude that is positioned between one first and one second traverse sections.This method comprise the following steps: (a) respond with one tilt one or more corresponding tilt angle at least (for example irradiation this top section and one first transversal section) at least electron beam to this structural detail carry out one or repeatedly scanning judge one first traverse section cross sectional; (b) respond one first parameter with select whether (i) respond this first crosscut section feature judge one second crosscut section feature or (ii) respond with one tilt one or more corresponding tilt angle at least (for example irradiation this top section and one second transversal section) at least electron beam to this structural detail carry out one or repeatedly scanning judge this second crosscut section feature; And (c) respond selection result and judge this second crosscut section feature.
But the essence according to this angle of inclination of one embodiment of the invention are zero or even are zero.
Can reach by electrical tilt and/or mechanical tilt or its both combinations according to another aspect of the present invention this pitch angle.Mechanical tilt can be by tilt this detecting element and/or this electron beam column body (or some of this column) or its both combinations mode for it.
The present invention provides and a kind ofly is used to judge that one has time method of the section feature of the structural detail in micron cross section, and this cross section is defined by an interlude that is positioned between one first and one second traverse sections.This method comprises the following steps: this structural detail of electron beam scanning that (a) tilts with first positive angle (with respect to a dotted line perpendicular to this structural detail), so that one first data set to be provided; (b) if the height of this structural detail is unknown or when not estimating, this structural detail of electron beam scanning that tilts with second positive angle (with respect to a dotted line perpendicular to this structural detail) is to provide one second data set; (c) respond at least this first data set to judge one first crosscut section feature; (d) if one first parameter has a particular value, respond this first crosscut section feature to judge one second crosscut section feature; (e) otherwise, if this first parameter is carried out the following step when having another value: (e.1) is with this structural detail of electron beam scanning of first negative angle (with respect to a dotted line perpendicular to this structural detail) inclination, so that one the 3rd data set to be provided; (e.2) if the height of this structural detail is unknown or when not estimating, this structural detail of electron beam scanning that tilts with second negative angle (with respect to a dotted line perpendicular to this structural detail) is to provide one the 4th data set; And this height can the first crosscut section feature be obtained so step (e.2) is not carried out usually by measuring; (e.3) respond at least the 3rd data set to judge one second crosscut section feature.
The invention provides and a kind ofly be used to judge that one has the once system of the section feature of the structural detail in micron cross section, this cross section is defined by an interlude that is positioned between one first and one second traverse sections, and this system comprises: first device that (a) is used to form an electron beam; (b) second device that is used to scan the electron beam of this structural detail that spreads all over a measured object and is used to judge a pitch angle of this electron beam; And this second device is the connection of mat one processor and controls; (c) detector that is connected to this processor, this detector are the electronics of being dispersed by structural detail to detect the interaction of this structural detail and electron beam through the location.This processor can operate with: (d.1) respond with one tilt one or more corresponding tilt angle at least (for example irradiation this top section and one first transversal section) at least electron beam to this structural detail carry out one or repeatedly scanning judge one first traverse section cross sectional; (d.2) respond one first parameter with select whether (i) respond this first crosscut section feature judge one second crosscut section feature or (ii) respond with one tilt one or more corresponding tilt angle at least (for example irradiation this top section and this second transversal section) at least electron beam to this structural detail carry out one or repeatedly scanning judge this second crosscut section feature; And (d.3) response selection result is judged this second crosscut section feature.
Description of drawings
For understanding the present invention and learning on its practice is how to carry out, now by nonrestrictive example and with reference to annexed drawings to describe preferred embodiment, wherein:
Fig. 1 a is a summary description according to the critical size sweep electron microscope of one embodiment of the invention;
Fig. 1 b is the oblique view according to object lens of another embodiment of the present invention;
Fig. 2 a is a perspective and a sectional view of explanation one metal wire;
Fig. 2 b is the cross-section of another metal wire of second traverse sections of explanation with first traverse sections of a upper portion, a forward (positively oriented) and negative sense (negatively oriented);
Fig. 3 a to 3c is that the traverse sections that a quite wide forward traverse sections, is rather narrow and the waveform of a negative sense traverse sections are represented in summary description;
Fig. 4 to 5 is that explanation is according to being used to judge that one has time method flow diagram of the section feature of the structural detail in micron cross section in one embodiment of the invention;
Fig. 6 a is the sectional view of explanation one between the exemplary relationship of two electron beams (tilting with first and second positive angle);
Fig. 6 b is the sectional view of explanation one between the exemplary relationship of two electron beams (tilting with first and second negative angle);
Fig. 7 is that explanation one is according to cross section and the Partial Feature of an aspect of the present invention by recording with this cross section of inclination electron beam scanning.
Embodiment
Typical C D-SEM comprises one in order to form the electron gun of an electron beam, utilizes deflection and the tilt component and the condenser lens of an electron beam scanning sample, and its grade can be under a certain heeling condition, reduces various skews and deviation of the alignment simultaneously.And the electronics of dispersing because of the interaction between this sample and this electron gun (for example secondary electron) can be adsorbed to the detector that detection signal can be provided, and with a processing modules process.This detection signal can be used for judging the sample of different characteristic, and forms the image of sample.
Invention can be implemented on the CD-SEMs of various structures, its structure may be different because of part count and arrangement of parts.For example the practical structures of the number of deflection units and each assembly all may be different.This CD-SEM can comprise built-in lens and outer lens detector or its both in conjunction with the person.
The calcspar of critical size sweep electron microscope (CD-SEM) 100 is that simplified schematic illustration is in Fig. 1 a.But CD-SEM 100 comprises the electron gun 103 of a divergent bundle 101, and this electron beam is captured by anode 104.These object lens 112 can focus on electron beam on this sample surfaces 105a.This electron beam is to utilize scan-type deflection units 102 these samples of scanning.The calibration of this electron beam and optical axis that this aperture 106 or desire these deflection units 108 to 111 of mat is respectively reached.When as a deflection unit coils, can use the static module and the static deflecting wedge that are charged plates or coil combining form.
Detection signal is that mat one processing components (can be the some of controller 33, but do not need herein) is handled, and this processing components has the image processing ability and can handle multi-form detection signal.Typical processing mode comprises that forming one reflects the waveform of this detection signal to the amplitude of direction of scanning.This waveform can further be handled with at least one edge of judging detected structural detail and other section features.
The different parts of this system are to be connected to the corresponding provisioning component of being controlled by different Control Component (for example the high pressure provisioning component 21), and the overwhelming majority such as its grade omits in diagram because of simplified illustration.These Control Component decidables are supplied to the electric current and the voltage of a specific features.
CD-SEM 100 comprises a pair of deflection system, and it comprises deflection units 110 and 111.Therefore, this deflection electron beam of introducing this first deflection units 110 can be proofreaied and correct in second deflection units 111.Because this pair deflection system, this electron beam can move and this electron beam need not be carried out the electron beam deflection with respect to this optical axis in a direction.
Fig. 1 b is the oblique view according to object lens 120 of another embodiment of the present invention.This tilt deflection is to carry out in these object lens belows (direction down) in Fig. 1 b.Object lens and object lens 102 different being in there being a center pole to be located in one or four configuration set, it is positioned these object lens and sample room, in order to control the deflected condition of this electron beam.This center pole be electrically connected to a ring and a core with additional coils (not shown) with a flux concentration between these center pole the space and allow electron beam pass through this place.
The accuracy measurement that CD-SEMs can several nanometers has the structural detail in inferior micron-scale cross section now.Expected is to make and inspection process continues under the situation of improvement again, and the size of this uniform cross section can more become to reducing in future.
The various features in this cross section then may become to attach most importance to, and these features can comprise as: the shape of cross sectional shape, one or more section, the width of section and/or height and/or position angle, and the relation between section.This feature can reflect representative value and maximum and/or minimum value.Generally speaking, the width of metal wire bottom is an emphasis, but is not certain, so other features also may be quite important.
Fig. 2 a is the stravismus and the sectional view of explanation metal wire 210.Metal wire 210 has a cross section 220, it comprises a top section 224 and two traverse sections 222 and 226 that essence is relative, it is to should top section 214 and the two side 212 and 214 of metal wire 210, wherein these traverse sections are to be the roughly forward at diagonal angle, so that the bottom of this metal wire can not covered by top section 210.Fig. 2 b illustrates the cross section 230 of another metal wire, and it has first traverse sections 232 of a top section 234, a forward and second traverse sections 236 of a negative sense.Fig. 2 b has also illustrated the various aspects of positive angle, negative angle and zero angle.
Be meant metal wire though should notice Fig. 2 a to 2b, but preceding method and system all can use to judge various structural details (for example contact hole, groove and fellow's) section feature, for example top critical size, bottom critical size, maximum critical size and fellow.
Fig. 3 a to 3c is that the traverse sections that a quite wide forward traverse sections, is rather narrow and the waveform 250-252 of a negative sense traverse sections are represented in summary description.Be as seen in Fig., suitable narrow of corrugated part that should be relevant with steep sidewalls and negative sense sidewall, and corresponding with the width f of this scanning beam.
Fig. 4 is that explanation one is used to judge that one has time method 400 process flow diagrams of the section feature of the structural detail in micron cross section, and this cross section is defined by an interlude that is positioned between one first and one second traverse sections.
Method 400 is initial by step 420, and it is to respond with an electron beam that tilts one or more corresponding tilt angle at least (for example irradiation this top section and one first transversal section) at least this structural detail to be carried out at least single pass and judge one first traverse section cross sectional.According to one embodiment of the invention, if the height of this structural detail is known or recorded, a single dip sweeping is promptly enough.Otherwise, then need at least twice scanning (with different heeling conditions).The height of this structural detail can be responded a height calibration process and/or respond the information that this measured object manufacturer provided and estimate.This calibration procedure can comprise that the height to the structural detail of horizontal month this tested object takes multiple measurements.This program can comprise that the height with this structural detail shines upon (mapping) in the zones of different of this tested object.This measurement can be undertaken by sweep electron microscope, but and nonessential, so other instruments such as atomic force microscope (atomic force microscope), confocal microscope (confocal microscope) all can use.
Confirm that first parameter value inquiry step 430 why can be connected on after the step 420, it is equivalent to confirm that whether a predetermined first condition satisfies, and/or confirm whether this first parameter value drops among a preset range or the scope group.Generally speaking, whether the result of this first parameter decidable step 420 can judge the required scanning times of a section feature to reduce in order to estimate this feature of second section.
Basically, if this traverse sections satisfies this first condition when being assumed to symmetry.Perhaps, this first parameter is also measured to some extent a possible traverse sections and responded, and is all relevant with specific waveforms as steep traverse sections and negative sense traverse sections.The inventor finds if when the width essence of a traverse sections equals the width of this electron beam, but it is the able one.
If when this first condition satisfies, promptly can follow step 430 and carry out step 440, it is to respond this first traverse sections feature to judge one second traverse section cross sectional.Otherwise, then can follow step 430 and carry out step 450, it is to respond with an electron beam that tilts one or more corresponding tilt angle at least (for example irradiation this top section and one second transversal section) at least this structural detail to be carried out at least single pass and judge one second traverse section cross sectional.It should be noted that under many situations when the height of this structural detail when being known by the result of step 420 (if they do not record or learn in advance), single dip sweeping is just enough.
This first parameter value can judge by different way, and such as but not limited to the combination of following manner and/or following these modes: (i) mat one pre-calibration program is judged; (ii) responding the balancing waveform of obtaining during the step 420 judges; (iii) responding related between the waveform segment relevant with traverse sections judges; (iv) judge by in pre-record waveform library, finding out the waveform that a best conforms to or roughly conform to.It should be noted that this waveform can be responded one and form with the scanning of an inclination electron beam and/or a non-inclination electron beam.But this symmetry mat end user gives this CD-SEM.
According to an aspect of the present invention, this symmetry can be by measuring an architectural feature (or composite structure feature), this tested object of rotation, finding out this predict object and reach and recorded by this this tested object of " relatively " orientation measurement.
This calibration procedure can comprise that the composite construction element both sides repeatedly measure, and judges whether this first condition satisfies.This first condition also can be responded to some extent to the required accuracy that this section feature is measured.
This first parameter value also or can respond to some extent to the width of this electron beam and with the relation between the width of this any one relevant corrugated part of first or second crosscut portion, wherein this waveform is to obtain in the step of judgement one first traverse section cross sectional.
One typical first parameter value may be true or mistake, but this is not certain, and for example it may have the numerical range that can point out certain number.When latter half of numerical range satisfied first condition, it can further respond other parameters, for example required accuracy and the fellow who all measures.
It after step 440 and 450 step 460 of judging the section feature of this structural detail.Can learn and first and second feature of this first and second traverse sections when also known by step 420 and/or step 440 when the section feature of this top/interlude, just can calculate the various features of this structural detail.For example, when supposing that this first condition satisfies, the width that this bottom critical size measurement of a metal wire is this top section adds the horizontal projection of this first side wall of twice.
Fig. 5 is that explanation is used to judge that one has time process flow diagram of the method for the section feature of the structural detail in micron cross section, and this cross section is to define by an interlude that is positioned between first and second traverse sections.
Method 500 is to originate in step 510, and it is this structural detail of electron beam scanning that tilts with first positive angle (with respect to a dotted line perpendicular to this structural detail), so that one first data set to be provided.The exemplary relationship that one electron beam 600 (tilting with first positive angle) and a structural detail are 210 then is illustrated in Fig. 6 a.
Be inquiry step 520 after step 510, whether the height of its inquiry structural detail known (height of structural detail records in advance) or recorded (getting by measuring other structural details, for example during a height calibration process).If answer then skips to step 530, otherwise then skips to step 540 for not.
Step 530 comprises this structural detail of electron beam scanning with second positive angle (with respect to a dotted line perpendicular to this structural detail) inclination, so that one second data set to be provided.The exemplary relationship that one electron beam 610 (tilting with second positive angle) and a structural detail are 210 then is illustrated in Fig. 6 a.Carry out step 540 after the step 530.
Step 540 comprise response at least this first data set judge one first traverse section cross sectional.Mention along band, when skipping, just respond this first data set to judge this feature as if step 530, right in execution in step 530, then respond two data sets and judge this feature.It should be noted that two data sets can see through chart and illustrate with waveform.
Confirm first parameter value inquiry step 550 why after the step 540.Those of skill in the art in the present technique field should understand this be similar to the inquiry this first parameter value whether fall within the particular range (or scope group).This first parameter value is to be used to judge whether one second traverse section cross sectional can be calculated by this first traverse section cross sectional.As hereinafter what will further specify is that this judgement meeting is responded to some extent to the symmetry of being estimated between this first and second traverse sections, and/or the width of these traverse sections is responded to some extent.
If can record this second traverse section cross sectional, after step 550, carry out step 560, otherwise just after step 550, proceed to step 601.
Step 601 comprises responds this first crosscut section feature to judge one second traverse section cross sectional.Usually judge the additional step of the section feature of this structural detail after step 601 and the step 580.
Step 560 comprises this structural detail of electron beam scanning with first negative angle (with respect to a dotted line perpendicular to this structural detail) inclination, so that one the 3rd data set to be provided.Exemplary relationship between one electron beam 620 (tilting with first negative angle) and a structural detail is to be illustrated in Fig. 6 b.
Be to inquire step 570 after the step 560, whether the height of its inquiry structural detail known (height of this structural detail is measured in advance) or estimated (by the measurement of other structural details, for example during height calibration process).If answer then skips to step 580, otherwise just skips to step 590 for not.
Step 580 comprises this structural detail of electron beam scanning with second negative angle (with respect to a dotted line perpendicular to this structural detail) inclination, so that one the 4th data set to be provided.Exemplary relationship between one electron beam 630 (tilting with second negative angle) and a structural detail is to be illustrated in Fig. 6 b, is carry out step 590 after the step 580.
Step 590 comprise response at least the 3rd data set judge one second traverse section cross sectional.If skips steps 580 is just responded the 3rd data set and judged this feature, if execution in step 580, both judge this feature then to respond the 3rd and the 4th data set.It should be noted that two data sets can illustrate it by a waveform.
It should be noted that this interlude (may be a top section when high structural detail) can be by judging in each scanning step.What can further note is, any feature (such as but not limited to top critical size, bottom critical size, maximum critical size) of supposing cross section and this cross section of first and second traverse section cross sectional, this structural detail all decidable it.Typical section feature is the horizontal projection of a traverse sections.Under the quite little situation in this pitch angle, be this pitch angle of supposition this tangent of an angle no better than.
It should be noted that some measurement may repeat, and the other dip sweeping of this structural detail (having identical and/or different pitch angle) also may be because of many former thereby carry out, for example average statistics noise and fellow.Therefore, method 400 and 500 may comprise measures one or more section feature, though the height of this structural detail is known or estimated in addition situation that a particular cross section feature has recorded under.
Fig. 7 illustrates a cross section and the measured certain characteristics of mat one this section of inclination electron beam scanning according to an aspect of the present invention.
With reference to Fig. 7, hereinafter listed variable all has following meaning:
The Z=height of line; X
TThe width (i.e. top critical size) that refers to the upper metal line; E
RThe horizontal projection that refers to right side wall; X
EThe horizontal projection that refers to left side wall; X
BThe horizontal projection (i.e. bottom critical size) that refers to the metal wire bottom; The α pitch angle of making a comment or criticism; E
EFinger is the side wall dimensions of inclined angle alpha through measurement.
If press two different positive angle (α by homonymy
L1And α
L2) and by two different negative angle (α
R1And α
R2) carry out two kinds of measurements, then: E
ER1Refer to that right side wall is with inclined angle alpha
R1The size that records; E
ER2Refer to that right side wall is with inclined angle alpha
R2The size that records; E
EL1Refer to that right side wall is with inclined angle alpha
L1The size that records; E
EL2Refer to that right side wall is with inclined angle alpha
L2The size that records.Should also assumablely be that this pitch angle (α) is very little so that α=tangent (α)
At least one that suppose that these parameters and bottom critical size can utilize the following equation group calculates:
First group (when satisfying) as if first condition:
X
B＝
X T+2
＊X
E；
X T＝(X
T+E
R1+E
R2)/3；
X
E＝E
E1-α1
＊(E
E1-E
E2)/(α
1-α
2)。
Second group (when not satisfying) as if first condition:
X
B＝
X T+X
EL+X
ER；
X T＝(X
T+E
R1+E
R2+E
L1+E
L2)/5；
X
EL＝E
EL1-α
L1 ＊ Z；
X
ER＝E
ER1-α
R1 ＊ Z；
Z＝{(E
E1-E
E2)/2(α
L1-α
L2)+(E
R1-E
R2)/2(α
R1-α
R2)}。
But the present invention's mat utilizes known instrument, method and element to implement.Therefore, the details of these instruments, element and method is not described in detail herein.In the preamble narration, be that the many specific detail of announcement such as the cross sectional shape of common metal line, the quantity of deflection units etc. are to help overall understanding the present invention.Yet what should understand is that the present invention also can implement under specific detail that need not be listed.
Though the present invention only discloses an one exemplary embodiment, the example of its variation has illustrated and has been specified in its announcement.Should understand the present invention can other combinations and be implemented under the varying environment, and can change under not departing from the inventive concept that this paper restrainted and retouch.
Claims (64)
1. one kind is used to judge that one has the once method of a section feature of the structural detail in micron cross section, and wherein this cross section is defined by an interlude that is positioned between first and second traverse sections, and this method comprises the following step at least:
Response to be with first pitch angle that tilts, with irradiation at least the electron beam of this interlude and this first traverse sections the single pass at least that this structural detail carries out is judged one first traverse section cross sectional;
Whether respond one first parameter value judges one second traverse section cross sectional or (ii) responds with second pitch angle that tilts to select (i) to respond this first traverse section cross sectional, with irradiation at least the disconnected electron beam of this interlude and this second crosscut the single pass at least that this structural detail carries out is judged this second traverse section cross sectional; And
Respond this selection result and judge this second traverse section cross sectional.
2. the method for claim 1, wherein this first parameter value is that the symmetry that this first and second traverse sections records is responded to some extent.
3. the method for claim 1, wherein this first parameter value is to be determined during a calibration procedure.
4. method as claimed in claim 3, wherein a test article comprises this submicron structure element and other submicron structure elements at least, and wherein this calibration procedure comprises both first and second section features at least of measuring in other submicron structure elements.
5. the method for claim 1, wherein this first parameter value is that the symmetry of a waveform is responded to some extent, this waveform be with this inclination with irradiation at least this interlude and this first traverse sections this structural detail of electron beam scanning and obtain.
6. the method for claim 1, wherein this first parameter value is that the symmetry of a waveform is responded to some extent, this waveform be with one be approximately perpendicular to one have this submicron structure element test article this structural detail of electron beam scanning and obtain.
7. the method for claim 1, wherein this first parameter value is that one between first corrugated part relevant with this first traverse sections and second corrugated part relevant with this second traverse sections relatedly responded to some extent.
8. the method for claim 1, wherein this first parameter value is that mat the following step is judged: obtain with this inclinations, to shine the waveform of this structural detail gained of electron beam scanning of this interlude and this first traverse sections at least; By the waveform that conforms to most of finding out a pre-record in several pre-record waveforms relevant with first parameter value of precomputation; And the precomputation association factor of responding the waveform that conforms to most of this pre-record is judged this first parameter value.
9. the method for claim 1, wherein this first parameter value is that the relation between the width of the width of electron beam and a corrugated part all relevant with this first or second traverse sections is responded to some extent, and wherein this waveform is obtained during the step of judging this first traverse section cross sectional.
10. the method for claim 1, wherein the step of this first traverse section cross sectional of this judgement comprises more at least: if the height of this structural detail is unknown or do not estimate, repeatedly scan with multiple corresponding tilt angle.
11. method as claimed in claim 10, wherein the height of this structural detail is to respond a height calibration process and estimate.
12. method as claimed in claim 11, wherein this height calibration process comprises the height of the composite construction element of measuring a test article, and wherein this test article has equal height ideally.
13. the method for claim 1, wherein this structural detail is a metal wire, and it has a top section and two roughly relative sidewalls.
14. the method for claim 1, wherein this structural detail is a contact hole.
15. the method for claim 1, wherein this structural detail is a groove.
16. the method for claim 1, wherein one of them of this first and second pitch angle is essentially zero degree.
17. one kind is used to judge that one has the once method of the section feature of the structural detail in micron cross section, wherein this cross section is defined by an interlude that is positioned between one first and one second traverse sections, and this method comprises the following step:
With this structural detail of electron beam scanning of first positive angle that tilts with respect to a dotted line perpendicular to this structural detail, so that one first data set to be provided;
If the height of structural detail is unknown or when not estimating, with this structural detail of electron beam scanning of second positive angle that tilts with respect to this dotted line perpendicular to this structural detail, so that one second data set to be provided;
Respond this first data set at least, judge one first traverse section cross sectional;
If when one first parameter has a particular value, respond this first traverse section cross sectional to judge one second traverse section cross sectional;
And, if this first parameter is carried out the following step when having another value:
With this structural detail of electron beam scanning of first negative angle that tilts with respect to this dotted line, so that one the 3rd data set to be provided perpendicular to this structural detail;
If the height of structural detail is unknown or when not estimating, with this structural detail of electron beam scanning of second negative angle that tilts with respect to this dotted line perpendicular to this structural detail, so that one the 4th data set to be provided;
Respond at least the 3rd data set to judge one second traverse section cross sectional.
18. method as claimed in claim 17, wherein this first parameter value is that the estimation symmetry of this first and second traverse sections is responded to some extent.
19. method as claimed in claim 17, wherein this first parameter value is to be determined during a calibration procedure.
20. method as claimed in claim 19, wherein a test article comprises this submicron structure element and other submicron structure elements at least; Wherein this calibration procedure comprises both first and second section features at least of measuring in other submicron structure elements.
21. method as claimed in claim 17, wherein this first parameter value is that the symmetry of a waveform is responded to some extent, this waveform be with one tilt with irradiation at least this interlude and one first traverse sections this structural detail of electron beam scanning and obtain.
22. method as claimed in claim 17, wherein this first parameter value is that the symmetry of a waveform is responded to some extent, this waveform be with one be approximately perpendicular to one have this submicron structure element test article this structural detail of electron beam scanning and obtain.
23. method as claimed in claim 17, wherein this first parameter value is that one between first corrugated part relevant with this first traverse sections and second corrugated part relevant with this second traverse sections relatedly responded to some extent.
24. method as claimed in claim 17, wherein this first parameter value is that mat the following step is judged: obtain with one to tilt with the irradiation waveform of this structural detail gained of electron beam scanning of this interlude and this first traverse sections at least; By the waveform that conforms to most of finding out a pre-record in several pre-record waveforms relevant with first parameter value of precomputation; And the precomputation association factor of responding the waveform that conforms to most of this pre-record is judged this first parameter value.
25. method as claimed in claim 17, wherein this first parameter value is that the relation between the width of the width of electron beam and a corrugated part all relevant with this first or second traverse sections is responded to some extent, and wherein this waveform is obtained during the step of judging this first traverse section cross sectional.
26. method as claimed in claim 17, wherein the step of this first traverse section cross sectional of this judgement comprises more at least: if the height of this structural detail is unknown or not estimation, repeatedly scan with multiple corresponding tilt angle.
27. method as claimed in claim 26, wherein the height of this structural detail is to respond a height calibration process and estimate.
28. method as claimed in claim 27, wherein this height calibration process comprises the height of the composite construction element of measuring a test article, and wherein this test article has equal height ideally.
29. method as claimed in claim 17, wherein this structural detail is a metal wire, and it has a top section and two roughly relative sidewalls.
30. method as claimed in claim 17, wherein this structural detail is a contact hole.
31. method as claimed in claim 17, wherein this structural detail is a groove.
32. method as claimed in claim 17, wherein one of them in this first positive angle and first negative angle is essentially zero degree.
33. one kind is used to judge that one has the once system of the section feature of the structural detail in micron cross section, wherein this cross section is defined by the interlude that is positioned between first and second traverse sections, and this system comprises:
First device is used to form an electron beam;
Second device is used to scan the pitch angle that this electron beam crosses this structural detail and is used to judge this electron beam; Wherein this second device is to be coupled to a processor and to be controlled by this processor; And
One detector is coupled to this processor, and this detector is the electronics that is configured to detect because of interacting and dispersed by this structural detail with this electron beam;
Wherein this processor is to operate to carry out the following step:
Response is with first pitch angle of inclining, with irradiation at least the electron beam of this interlude and this first traverse sections the single pass at least of this structural detail is judged one first traverse section cross sectional;
Respond one first parameter value and judge one second traverse section cross sectional or (ii) respond with second pitch angle that tilts whether to select (i) to respond this first traverse section cross sectional, with irradiation at least the electron beam of this interlude and this second traverse sections this structural detail carried out at least single pass judge this second traverse section cross sectional; And
Respond this selection result and judge this second traverse section cross sectional.
34. system as claimed in claim 33, wherein this first parameter value is that the symmetry that this first and second traverse sections records is responded to some extent.
35. system as claimed in claim 33, wherein this first parameter value is to be determined during a calibration procedure.
36. system as claimed in claim 35, wherein a test article comprises this submicron structure element and other submicron structure elements at least, and wherein this calibration procedure comprises both first and second section features at least of measuring in other submicron structure elements.
37. system as claimed in claim 33, wherein this first parameter value is that the symmetry of a waveform is responded to some extent, and this waveform is with an inclination, with irradiation at least this interlude and this first traverse sections this structural detail of electron beam scanning and obtain.
38. system as claimed in claim 33, wherein this first parameter value is that a symmetry of a waveform is responded to some extent, this waveform be with one be approximately perpendicular to one have this submicron structure element test article this structural detail of electron beam scanning and obtain.
39. system as claimed in claim 33, wherein this system is operation to judge that this first parameter value is that one between first corrugated part relevant with this first traverse sections and second corrugated part relevant with this second traverse sections relatedly responded to some extent.
40. system as claimed in claim 33, wherein this system be operation to judge that this first parameter value is that mat the following step is judged: obtain with an inclination, with the irradiation waveform of this structural detail gained of electron beam scanning of this interlude and this first traverse sections at least; By the waveform that conforms to most of finding out a pre-record in several pre-record waveforms relevant with first parameter value of precomputation; And the precomputation association factor of responding the waveform that conforms to most of this pre-record is judged this first parameter value.
41. system as claimed in claim 33, wherein this first parameter value is that the relation between a width of the width of electron beam and a corrugated part all relevant with this first or second traverse sections is responded to some extent, and wherein this waveform is obtained during the step of judging this first traverse section cross sectional.
42. system as claimed in claim 33, wherein this system is operation to judge that this first traverse section cross sectional is unknown or when not estimating at the height of this structural detail, is repeatedly to scan with multiple corresponding tilt angle.
43. system as claimed in claim 42, wherein this system is that operation is estimated a height of this structural detail to respond a height calibration process.
44. system as claimed in claim 43, wherein this height calibration process comprises the height of the composite construction element of measuring a test article, and wherein this test article has equal height ideally.
45. system as claimed in claim 33, wherein this structural detail is a metal wire, and it has a top section and two roughly relative sidewalls.
46. system as claimed in claim 33, wherein this structural detail is a contact hole.
47. system as claimed in claim 33, wherein this structural detail is a groove.
48. system as claimed in claim 31, wherein one of them of this first pitch angle and second pitch angle is essentially zero degree.
49. one kind is used for one and has the once system of a section feature of the structural detail in micron cross section, wherein this cross section is defined by the interlude that is positioned between first and second traverse sections, and this system comprises:
First device is used to form an electron beam;
Second device is used to scan the pitch angle that this electron beam crosses this structural detail and is used to judge this electron beam; Wherein this second device is to be coupled to a processor and to be controlled by this processor; And
One detector, it is coupled to this processor, and this detector is the electronics that is configured to detect because of interacting and dispersed by this structural detail with this electron beam;
Wherein this processor is to operate to carry out the following step:
Control this second device so that this structural detail can be scanned by the electron beam of first positive angle that tilts with respect to a dotted line perpendicular to this structural detail, so that one first data set to be provided;
If the height of structural detail is unknown or when not estimating, control this second device so that this structural detail can be scanned by the electron beam of second positive angle that tilts with respect to this dotted line perpendicular to this structural detail, so that one second data set to be provided;
Respond at least this first data set to judge one first traverse section cross sectional;
If one first parameter value has a particular value, respond this first traverse section cross sectional and judge one second traverse section cross sectional;
And wherein, if these other numerical value of first parameter value tool, then this processor is to operate to carry out the following step:
Control this second device so that this structural detail can be by this structural detail of electron beam scanning of first negative angle that tilts with respect to this dotted line perpendicular to this structural detail, so that one the 3rd data set to be provided;
If the height of this structural detail is unknown or estimation as yet, control this second device so that this structural detail can be scanned by the electron beam of second negative angle that tilts with respect to this dotted line perpendicular to this structural detail, so that one the 4th data set to be provided;
This second traverse section cross sectional is judged in response the 3rd data set at least.
50. system as claimed in claim 49, wherein this first parameter value is that the symmetry that this first and second traverse sections records is responded to some extent.
51. system as claimed in claim 49, wherein this first parameter value is to be determined during a calibration procedure.
52. system as claimed in claim 51, wherein a test article comprises this submicron structure element and other submicron structure elements at least, and wherein this calibration procedure comprises both first and second section features at least of measuring in other submicron structure elements.
53. system as claimed in claim 49, wherein this first parameter value is that a symmetry of a waveform is responded to some extent, and this waveform is with an inclination, with irradiation at least this interlude and one first traverse sections this structural detail of electron beam scanning and obtain.
54. system as claimed in claim 49, wherein this first parameter value is that a symmetry of a waveform is responded to some extent, this waveform be with one be approximately perpendicular to one have this submicron structure element test article this structural detail of electron beam scanning and obtain.
55. system as claimed in claim 49, wherein this system is operation to judge that this first parameter value is that one between first corrugated part relevant with this first traverse sections and second corrugated part relevant with this second traverse sections relatedly responded to some extent.
56. system as claimed in claim 49, wherein this system be operation to judge that this first parameter value is that mat the following step is judged: obtain with an inclination, with the irradiation waveform of this structural detail gained of electron beam scanning of this interlude and this first traverse sections at least; By the waveform that conforms to most of finding out a pre-record in several pre-record waveforms relevant with first parameter value of precomputation; And the precomputation association factor of responding the waveform that conforms to most of this pre-record is judged this first parameter value.
57. system as claimed in claim 49, wherein this first parameter value is that the relation between a width of the width of electron beam and a corrugated part all relevant with this first or second traverse sections is responded to some extent, and wherein this waveform is obtained during the step of judging one first traverse section cross sectional.
58. system as claimed in claim 49, wherein this system is operation to judge that this first traverse section cross sectional is unknown or when not estimating at the height of this structural detail, is repeatedly to scan with multiple corresponding tilt angle.
59. system as claimed in claim 58, wherein this system is that operation is estimated a height of this structural detail to respond a height calibration process.
60. system as claimed in claim 59, wherein this height calibration process comprises the height of the composite construction element of measuring a test article, and wherein this test article has equal height ideally.
61. system as claimed in claim 49, wherein this structural detail is a metal wire, and it has a top section and two roughly relative sidewalls.
62. system as claimed in claim 49, wherein this structural detail is a contact hole.
63. system as claimed in claim 49, wherein this structural detail is a groove.
64. system as claimed in claim 49, wherein one of them of this first positive angle and first negative angle is essentially zero degree.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
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| US39486402P | 2002-07-11 | 2002-07-11 | |
| US60/394,864 | 2002-07-11 | ||
| PCT/US2003/021690 WO2004008255A2 (en) | 2002-07-11 | 2003-07-11 | Method and apparatus for measuring critical dimensions with a particle beam |
Publications (2)
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| CN1668915A CN1668915A (en) | 2005-09-14 |
| CN1668915B true CN1668915B (en) | 2011-06-15 |
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| CN038164191A Expired - Fee Related CN1668915B (en) | 2002-07-11 | 2003-07-11 | Method and apparatus for determining characteristics of structural element interface having sub-micron cross-sectional area |
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| EP (1) | EP1523671A2 (en) |
| JP (1) | JP4493495B2 (en) |
| KR (1) | KR101057554B1 (en) |
| CN (1) | CN1668915B (en) |
| AU (1) | AU2003263776A1 (en) |
| WO (1) | WO2004008255A2 (en) |
Cited By (1)
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|---|---|---|---|---|
| US12123708B2 (en) | 2019-05-21 | 2024-10-22 | Applied Materials, Inc. | Enhanced cross sectional features measurement methodology |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101035426B1 (en) * | 2003-07-11 | 2011-05-18 | 어플라이드 머티리얼즈 이스라엘 리미티드 | Systems and methods for determining cross-sectional features of structural elements using reference structural elements |
| DE102004004597B4 (en) * | 2004-01-29 | 2008-08-07 | Qimonda Ag | Method for measuring a structure on a semiconductor wafer with a scanning electron microscope |
| DE102004021442A1 (en) * | 2004-04-28 | 2005-11-24 | Infineon Technologies Ag | Method for the metrological characterization of a structure |
| CN102569114B (en) * | 2010-12-17 | 2014-08-27 | 无锡华润上华半导体有限公司 | Metal lead size monitoring method |
| CN103065992A (en) * | 2012-12-14 | 2013-04-24 | 上海集成电路研发中心有限公司 | Semiconductor surface structure side wall characterization method |
| CN107978536A (en) * | 2016-10-25 | 2018-05-01 | 中芯国际集成电路制造(上海)有限公司 | The CDSEM scan methods of pattern in a kind of wafer domain |
| US10438769B1 (en) * | 2018-05-02 | 2019-10-08 | Kla-Tencor Corporation | Array-based characterization tool |
| CN111199895B (en) * | 2020-01-02 | 2022-07-15 | 长江存储科技有限责任公司 | Method, device, server and readable storage medium for measuring channel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61128114A (en) | 1984-11-27 | 1986-06-16 | Toshiba Corp | Evaluation of surface shape of pattern |
| JPH0621784B2 (en) * | 1984-12-10 | 1994-03-23 | 株式会社日立製作所 | Pattern shape evaluation device |
| JPH0727943B2 (en) * | 1986-12-22 | 1995-03-29 | 三菱電機株式会社 | Semiconductor pattern shape evaluation device |
| JPH0663758B2 (en) * | 1987-10-14 | 1994-08-22 | 株式会社東芝 | Pattern measurement method |
| JPH01311551A (en) * | 1988-06-08 | 1989-12-15 | Toshiba Corp | Pattern shape measuring device |
| JPH07111335B2 (en) * | 1990-02-07 | 1995-11-29 | 株式会社東芝 | Pattern shape measuring method and apparatus |
| JPH07111336B2 (en) * | 1990-02-07 | 1995-11-29 | 株式会社東芝 | Pattern dimension measuring method and device |
| WO2001045136A1 (en) * | 1999-12-14 | 2001-06-21 | Applied Materials, Inc. | Method and system for the examination of specimen using a charged particle beam |
| US6472662B1 (en) * | 2000-08-30 | 2002-10-29 | International Business Machines Corporation | Automated method for determining several critical dimension properties from scanning electron microscope by using several tilted beam or sample scans |
| US6670612B1 (en) * | 2002-07-01 | 2003-12-30 | Kla-Tencor Technologies Corporation | Undercut measurement using SEM |
| KR101035426B1 (en) * | 2003-07-11 | 2011-05-18 | 어플라이드 머티리얼즈 이스라엘 리미티드 | Systems and methods for determining cross-sectional features of structural elements using reference structural elements |
-
2003
- 2003-07-11 AU AU2003263776A patent/AU2003263776A1/en not_active Abandoned
- 2003-07-11 CN CN038164191A patent/CN1668915B/en not_active Expired - Fee Related
- 2003-07-11 WO PCT/US2003/021690 patent/WO2004008255A2/en active Application Filing
- 2003-07-11 KR KR1020057000440A patent/KR101057554B1/en not_active Expired - Fee Related
- 2003-07-11 JP JP2004521664A patent/JP4493495B2/en not_active Expired - Fee Related
- 2003-07-11 EP EP03764488A patent/EP1523671A2/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12123708B2 (en) | 2019-05-21 | 2024-10-22 | Applied Materials, Inc. | Enhanced cross sectional features measurement methodology |
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| WO2004008255A3 (en) | 2004-06-10 |
| CN1668915A (en) | 2005-09-14 |
| KR20060084787A (en) | 2006-07-25 |
| WO2004008255A2 (en) | 2004-01-22 |
| AU2003263776A1 (en) | 2004-02-02 |
| JP2005533252A (en) | 2005-11-04 |
| JP4493495B2 (en) | 2010-06-30 |
| WO2004008255A8 (en) | 2004-07-22 |
| KR101057554B1 (en) | 2011-08-17 |
| AU2003263776A8 (en) | 2004-02-02 |
| EP1523671A2 (en) | 2005-04-20 |
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