CN1661818A - LED structure - Google Patents

Abstract

The invention relates to a light emitting diode structure with a built-up oxide film contact layer. The light emitting diode structure is constructed on a substrate and comprises a buffer layer formed on the substrate, a lower binding layer formed on the buffer layer, a light emitting layer formed on the lower binding layer, an upper binding layer formed on the light emitting layer, a constructed oxide film contact layer formed on the upper binding layer, and a first electrode and a second electrode (transparent electrode), wherein the conductivity of the constructed oxide film contact layer can be P type, N type or I type, and the transparent electrode is formed on the constructed oxide film contact layer and is used as an anode of the light emitting diode. The first electrode is formed on the lower bound layer, and is separated from the light-emitting layer, the upper bound layer, the contact layer and the transparent electrode to be used as the cathode of the light-emitting diode.

Description

LED structure

technical field

The present invention relates to a light-emitting diode structure, in particular to a light-emitting diode structure composed of III-V group elements (III-V group element) and having a structural oxide film contact layer.

Background technique

Gallium Nitride (GaN)-based epitaxial technology has been a breakthrough by Japanese experts in 1993, which has set off a climax of the industrialization of GaN-based blue light-emitting diodes in the world.

The known gallium nitride-based light-emitting diode structure 1 (as shown in FIG. 1 ) is formed on a substrate 10, such as an Al ₂ O ₃ substrate, and its structure is sequentially composed of nucleation layer (nucleation layer) from bottom to top. ) 12. N-type conductive buffer layer (N-type conductive buffer layer) 14, lower confinement layer (confinement layer) 16 for N-type doped gallium nitride to make subsequent crystal growth smoother and easier The active layer (active layer) 18 for light emission, the upper confinement layer 20, the contact layer 22 of P-type gallium nitride, and the transparent electrode 24 for the anode of the light-emitting diode 1, wherein the doping of the lower confinement layer 16 and the upper confinement layer 20 The type is opposite, for example, when the lower confinement layer 16 is N-type doped GaN, the upper confinement layer 20 is P-type doped GaN. The material of the transparent electrode 24 is usually N-type doped, such as indium tin oxide, cadmium tin oxide or very thin metal. In addition, an electrode 26 for the cathode of the light-emitting diode 1 is formed on the buffer layer 14 in a region isolated from the upper and lower binding layers 20 , 16 and the active layer 18 .

FIG. 2 is a schematic diagram of the range of the light emitting area of the light emitting diode 1 in FIG. 1 . After a forward bias is applied to the transparent electrode 24 and the electrode 26 of the LED 1 , the LED 1 will be turned on, and current will flow from the transparent electrode 24 to the active layer 18 . It is known that the carrier concentration of the P-type GaN contact layer 22 cannot be too high, and the contact resistance is high, so that the current spreading effect is not good. However, the P-type transparent electrode 24 only covers part of the contact layer 22. As can be seen from FIG. The effect of the active layer 18 is brought into play, so that the luminous efficiency of the light emitting diode 1 is greatly reduced.

In summary, the known light-emitting diode structure is limited by the physical characteristics of the contact layer, making it impossible to effectively grow a high-concentration P-type contact layer, which increases the manufacturing cost of light-emitting diodes and reduces the yield of products. . Furthermore, the known LED structure cannot provide a diode with high luminous efficiency, and most of the active layer area of the diode is not well utilized. Furthermore, the doping type (conduction type) of the transparent electrode and the contact layer is different, so a junction may be generated between the transparent electrode and the contact layer, which affects the operation of the light emitting diode.

Therefore, improving the physical properties of the contact layer should effectively improve the luminous efficiency of the LED. Taiwan Patent No. 156268 discloses a doped superlattice strained layer (strained layer superlattices, SLS) structure as a contact layer of a light-emitting diode to improve the luminous efficiency of known light-emitting diodes. Taiwan Invention Patent Announcement No. 546859 also discloses a gallium nitride-based light-emitting diode with a digital penetration layer, so that the indium tin oxide layer and the p-type gallium nitride-based contact layer are in an ohmic contact state to reduce the two resistance between them. Although these improvements are more or less beneficial to the improvement of luminous efficiency, satisfactory results have not yet been achieved.

Therefore, the present invention aims at overcoming the above-mentioned disadvantages so as to effectively improve the luminous efficiency of the light-emitting diodes.

Contents of the invention

The object of the present invention is to provide a light emitting diode structure with a Constructive Oxide Contact Structure (COCS).

Another object of the present invention is to provide a light-emitting diode structure that can effectively reduce the resistance of the contact layer, so as to effectively improve its luminous efficiency.

According to the light emitting diode structure pointed out in the present invention, the contact layer of the light emitting diode is used as the contact layer of the structural oxide thin film, which makes it easier to form a high concentration (high conductivity) contact layer. When the contact layer is supplemented with an appropriate transparent electrode, it can be used to effectively increase the luminous efficiency and reduce the operating voltage.

Using the structure-type oxide film contact layer structure pointed out in the present invention as the contact layer of the light-emitting diode does not need to limit the type of dopant in the contact layer, and the transparent electrode can be made of the same conductivity type material as the contact layer to eliminate The interface between the transparent electrode and the contact layer.

In addition, using the structure-type oxide film contact layer structure pointed out in the present invention as the contact layer of the light-emitting diode has better contact characteristics with the transparent electrode, and the size of the transparent electrode can be roughly consistent with the active layer to improve the flow of current. The area of the active layer is used to increase the luminous area of the active layer and improve the luminous efficiency.

According to the LED structure pointed out by the present invention, its structure is briefly described as follows:

According to the light-emitting diode structure pointed out in the present invention, it is framed on a substrate, including a buffer layer, a lower binding layer, a light-emitting layer, an upper binding layer, a contact layer, and a first electrode and a second electrode (transparent electrode) . Wherein, the buffer layer of the first conductivity type is formed on the substrate, and the lower binding layer of the first conductivity type is formed on the buffer layer of the first conductivity type, wherein the dopant of the lower binding layer and the conductive buffer layer The dopants are of the same type, for example, both are P-type or N-type dopants. The light-emitting layer is formed on the lower confinement layer, and the upper confinement layer of the second conductivity type is formed on the emissive layer, wherein the dopant of the upper confinement layer and the dopant of the lower confinement layer are different types, for example, one of them is One is a P-type dopant and the other is an N-type dopant. The second conductive type semiconductor compound material is formed on the upper bound layer and used as a contact layer. The contact layer is a structural oxide film contact layer, and its conductivity can be P-type, N-type or I-type. As for the transparent electrode, it is formed on the contact layer and serves as the anode of the LED. The first electrode is formed on the lower binding layer and is isolated from the light-emitting layer, the upper binding layer, the contact layer and the transparent electrode, and serves as the cathode of the light-emitting diode.

The conductive types of the above-mentioned transparent electrode and the contact layer of the structured oxide film can be the same or different, for example, both are P-type or N-type, or one is P-type and the other is N-type.

The present invention further proposes a light emitting diode structure with a structured oxide thin film contact layer and built on a substrate. It consists of a conductive buffer layer formed on the substrate, a light-emitting layer framed on the buffer layer and sandwiched between the upper and lower binding layers, and a structural oxide film contact layer formed on the upper binding layer. It can be P-type, N-type or I-type, a conductive thin film formed on the contact layer of the structural oxide film, formed on the lower bound layer, and isolated from the light emitting layer, the upper bound layer, the contact layer and the transparent electrode The first electrode, and the second electrode (transparent electrode) formed on the conductive film. Among them, the conductive thin film is used as the current dispersion and light transmission layer. The dopant of the upper confinement layer and the dopant of the lower confinement layer are of different types, for example, one is a P-type dopant, and the other is an N-type dopant.

The conductive types of the above-mentioned transparent electrode and the contact layer of the structured oxide film can be the same or different, for example, both are P-type or N-type, or one is P-type and the other is N-type.

The present invention will be further illustrated by reference to the following examples, which do not limit the foregoing disclosure of the invention. Those skilled in the art of the present invention can make some improvements and modifications, but still do not depart from the scope of the present invention.

Description of drawings

FIG. 1 is a schematic cross-sectional view showing a known light-emitting diode containing III-V group elements;

FIG. 2 is a schematic diagram showing the scope of the light-emitting area of the light-emitting diode in FIG. 1;

3 is a schematic cross-sectional view of a preferred embodiment of a light emitting diode structure pointed out according to the present invention;

4 is a schematic cross-sectional view of another embodiment of the light emitting diode structure pointed out according to the present invention;

Fig. 5 is a data analysis chart of the current-voltage characteristic test of the light-emitting diode pointed out according to the present invention.

◆: Known light-emitting diode structure;

■: Light emitting diode structure of the present invention.

Fig. 6 is a data analysis chart of the current-brightness test of the light-emitting diode pointed out according to the present invention.

◆: Known LED structure;

■: Light emitting diode structure of the present invention.

in the picture

1 LED 10 Substrate

12 crystal nucleus layer 14 buffer layer

16 lower binding layers 18 active layers

20 upper binding layer 22 contact layer

24 transparent electrodes 26 electrodes

100 light emitting diode structure 120 substrate

122 buffer layer 124 lower binding layer

126 luminescent layer 128 upper bound layer

130 contact layer 132 first electrode

134 second electrode 136 conductive film

Detailed ways

In order to make the purpose, features and advantages of the present invention more easily understood by those skilled in the art of the present invention, now in conjunction with the accompanying drawings, further detailed description is as follows:

According to the light-emitting diode structure pointed out in the present invention, the Constructive Oxide Contact Structure (COCS) is used to form a high-concentration (high-conductivity) contact layer to reduce the contact layer resistance. When the contact layer is supplemented with an appropriate transparent electrode, it can be used to effectively increase the luminous efficiency and reduce the operating voltage.

In addition, since the contact layer of the structured oxide film has a higher carrier concentration than the bulk layer, the transparent electrode built on it can easily form an Ohmic contact with it, without causing carrier The concentration is not high enough to form a Schottky contact, which increases the operating voltage of the component. In addition, the transparent electrode can use the same conductivity type material as the contact layer of the structural oxide film, so that a junction between the transparent electrode and the contact layer is not easy to occur, and the dimensions of the transparent electrode and the contact layer are easier to make consistent.

Referring to FIG. 3 , it is a schematic cross-sectional view of a preferred embodiment of a light emitting diode structure 100 according to the present invention. According to the light emitting diode structure 100 pointed out in the present invention, a substrate 120 is firstly provided, and the substrate 120 can be an insulating material, and can also be made of a conductive semiconductor material. There is no special limitation here, as long as it is any known or unknown All materials available as LED substrates can be used in the LED structure pointed out in the present invention. When it is an insulating material, examples that can be mentioned here include aluminum oxide (Al ₂ O ₃ , sapphire), aluminum nitride (AlN), gallium nitride (GaN), spinel (Spinel), lithium oxide Gallium (LiGaO ₃ ) or lithium aluminum oxide (LiAlO ₃ ), etc., but not limited thereto. When it is a conductive semiconductor material, examples that can be cited here include silicon carbide (SiC), zinc oxide (ZnO), silicon (Si), gallium phosphide (GaP), gallium arsenide (GaAs), selenium Zinc oxide (ZnSe), indium phosphide (InP), or conductive gallium nitride (GaN) added with silicon impurities, etc., but not limited thereto.

Next, a buffer layer 122 of the first conductivity type is formed on the _substrate 120, and its material can be a compound such as _{AlxInyGa1 -xyN} , where x≥0; y≥0; 0≤x+y<1. Examples that can be mentioned here include indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or gallium nitride (GaN).

Form the lower confinement layer 124 on the buffer layer 122 of the first conductivity type, which can be prepared by any known or unknown III-V group element compound containing gallium nitride (GaN), and this compound can be made of Al _o In _p Ga _1-op The general chemical formula of N represents that o≥0; p≥0; 0≤o+p<1. For example, gallium nitride (GaN) of the first conductivity type. A light-emitting layer 126 is formed on the lower confinement layer 124, which can also be made of any known or unknown III-V group element compound containing gallium nitride (GaN), such as indium gallium nitride (InGaN). An upper confinement layer 128 is formed on the light-emitting layer 126, which can also be prepared from any known or unknown III-V group element compound containing gallium nitride (GaN), such as gallium nitride of the second conductivity type (GaN) or Aluminum Gallium Nitride (AlGaN). Wherein, the light emitting layer 126 is covered by the lower binding layer 124 and the upper binding layer 128 . Moreover, the material selection, composition content, and selection of dopants of the III-V group element compounds containing gallium nitride (GaN) in the three layers can be adjusted according to actual needs and designs. The aforementioned examples are only Examples illustrate, but do not limit the scope of rights of the present invention.

Next, a contact layer 130 is formed on the upper constraint layer 128 . In the light emitting diode structure 100 pointed out according to the present invention, the contact layer 130 is made of a III-V group element compound material with a very high carrier concentration, which is a structural oxide thin film contact layer, which can be made of four kinds of materials The stacks are P ⁺ GaN, Y ₁ InN, Y ₂ In _x1 Ga _1-x1 N and Y ₃ InN respectively, and the stacking order can be changed randomly according to the P-type and N-type dopants. Wherein, 0≤X ₁ ≤1, Y ₁ , Y ₂ and Y ₃ can be P-type or N-type dopants, so their conductivity can also be P-type, N-type or I-type. The thickness of the contact layer of the structured oxide film is in the range of 0.1-1,000 nanometers (nano meter, nm).

Next, on the lower confinement layer 124, a first electrode 132 is formed on the region isolated from the light emitting layer 126, the upper confinement layer 128 and the contact layer 130, as the cathode of the light emitting diode structure 100, which has good ohmic resistance with the lower confinement layer 124. Contact, and thus have a lower contact resistance. In addition, a second electrode (transparent electrode) 134 is formed on the contact layer 130 , which is made of a thin metal material and serves as the anode of the LED structure 100 .

The aforementioned first electrode or second electrode is selected from indium (In), tin (Sn), zinc (Zn), nickel (Ni), gold (Au), chromium (Cr), cobalt (Co), cadmium (Cd) , aluminum (Al), vanadium (V), silver (Ag), titanium (Ti), tungsten (W), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru) and other metals The metal electrode of a one-element, two-element or more than two-element alloy has a thickness ranging from 1 to 10,000 nanometers (nm).

According to another embodiment of the light-emitting diode pointed out by the present invention, as shown in Figure 4, its structure is substantially the same as the embodiment in Figure 3, but one layer of conductive thin film 136 is formed on the contact layer 130 for current dispersion and For light transmission. It can be applied to the material packaging of flip-chip light-emitting diodes, so as to effectively improve the heat dissipation characteristics and antistatic ability of the light-emitting diodes. This conductive film 136 is made of indium (In), tin (Sn), zinc (Zn), nickel (Ni), gold (Au), chromium (Cr), cobalt (Co), cadmium (Cd), aluminum (Al ), vanadium (V), silver (Ag), titanium (Ti), tungsten (W), platinum (Pt), palladium (Pd), rhodium (Rh) or ruthenium (Ru) and other metals Or a transparent oxide conductive layer of an oxide film or alloy with a thickness ranging from 1 to 1,000 nanometers. The conductive thin film 136 can also be made of a single, binary or more than binary alloy formed of a metal with high reflectivity. Among them, examples of the metal with high reflectivity include aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), titanium ( Ti), gold (Au), nickel (Ni) and copper (Cu), but not limited thereto.

In addition, since the contact layer of the structured oxide film has a higher carrier concentration than the bulk layer, the transparent electrode built on it can easily form an Ohmic contact with The concentration is not high enough to form a Schottky contact, which increases the operating voltage of the component. In addition, the transparent electrode can use the same conductivity type material as the contact layer of the structural oxide film, so that the junction between the transparent electrode and the contact layer is not easy to occur, and the size of the transparent electrode and the contact layer can be easily made consistent.

To sum up, the light emitting diode structure pointed out according to the present invention has at least the following characteristics:

1. When the contact layer of the structured oxide thin film pointed out by the present invention is used as the contact layer of the light-emitting diode, the contact layer with high carrier concentration can be easily formed.

2. The structured oxide thin film contact layer and the transparent electrode pointed out in the present invention have better ohmic contact characteristics, which can improve the luminous efficiency and reduce the operating voltage of the component.

3. The conductivity types of the transparent electrode and the contact layer can be the same type or different types. When the two are of the same conductivity type, the problem of the joint surface can be further eliminated.

Since light-emitting diodes are generally static-sensitive materials, when the light-emitting diode structure pointed out by the present invention is subjected to electrostatic tests with known structures, the structural oxide thin film contact layer as the contact layer can effectively improve the structure of the light-emitting diode according to the present invention. The anti-static discharge (Electrostatic Discharge, ESD) capability of the indicated light-emitting diodes (Table 1).

Referring to Fig. 5, it is a data analysis diagram of the light-emitting diode current-voltage characteristic test according to the present invention, as can be seen from the figure, when the same current is applied, the light-emitting diode pointed out according to the present invention is at low current In operation, lower voltage characteristics can be obtained compared to known light-emitting diodes.

Referring to FIG. 6 , it is a data analysis chart of the current-brightness test of the light-emitting diode pointed out according to the present invention. Under the same current applied, the light-emitting diode according to the invention can emit higher brightness than the known light-emitting diode.

To sum up, according to the light emitting diode structure pointed out in the present invention, it can indeed have higher luminous efficiency, lower device operating voltage and stronger anti-static discharge capability than the known light emitting diodes.

Table 1 According to the results of the electrostatic test of the light-emitting diode structure pointed out by the present invention Human Body Model (HBM) Mechanical Mode (MM) standard test Level 1 0～1999(v) M0 0～49(v) M3 200～399(v) Human body model: MIL-STD-883C Method 3015.7 Level 2 2000～3999(v) M1 50～99(v) M4 400～799(v) Mechanical mode: EIAJ-IC-121 Method 20 Level 3 4000～15999(v) M2 100～199(v) M5 >799(v) project Grain type Static electricity test mode 1 2 3 4 5 6 7 8 9 10 1 Known Light Emitting Diode Structures Human body pattern(+) 2000 2500 2000 2500 3000 2500 2500 3000 2500 3000 Human body model (-) -250 -1500 -2000 -1750 -200 -1000 -250 -500 -2000 -500 Mechanical Mode(+) 250 100 300 200 100 250 150 100 300 200 Mechanical mode (-) -75 -25 -100 -50 -75 -25 -100 -75 -50 -50 2 Light-emitting diode structure of the present invention Human body pattern(+) 4000 5000 4000 5000 7000 6000 4500 5000 4500 5000 Human body model (-) -5000 -3000 -4000 -3000 -5000 -3000 -4000 -4500 -5000 -4000 Mechanical Mode(+) 700 500 500 1000 500 700 800 600 750 500 Mechanical mode (-) -800 -600 -450 -500 -600 -700 -500 -600 -600 -500

Claims (13)

1. light emitting diode construction comprises:

One substrate;

One is formed at first conductivity type buffer layer on this substrate;

One is formed at the following bond course on this buffering;

One is formed at the luminescent layer on this time bond course;

One is formed at the last bond course on this luminescent layer;

One is formed at the contact layer on the bond course on this, and it is by the prepared constructor oxide film contact layer of the second conductive-type semiconductor compound-material;

One is formed on this time bond course, and with this luminescent layer, bond course and this contact layer are isolated on this first electrode; And

One is formed at second electrode on this contact layer.

2. light emitting diode construction as claimed in claim 1, wherein the conductivity of this constructor oxide film contact layer is P type, N type or I type, it is by P ⁺GaN, Y ₁InN, Y ₂In _X1Ga _1-x1N and Y ₃Four kinds of materials such as InN pile up and form, wherein 0≤X ₁≤ 1, Y ₁, Y ₂And Y ₃Can be P type or N type alloy.

3. light emitting diode construction as claimed in claim 2, wherein the thickness range of this constructor oxide film contact layer is 0.1～1, between 000 nanometer.

4. light emitting diode construction as claimed in claim 1, wherein this substrate is prepared by insulation light transmissive material or conductive-type semiconductor material.

5. light emitting diode construction as claimed in claim 4, wherein this insulation light transmissive material is to be selected from the group that is made up of aluminium oxide, aluminium nitride, gallium nitride, spinelle, lithia gallium and aluminium oxide lithium.

6. light emitting diode construction as claimed in claim 4, wherein this conductive-type semiconductor material is to be selected from the group that is made up of the conductive type nitride gallium of carborundum, zinc oxide, silicon, gallium phosphide, GaAs, zinc selenide, indium phosphide and adding sila matter.

7. light emitting diode construction as claimed in claim 1, wherein this resilient coating its be by Al _xIn _yGa _1-x-yN is prepared, wherein x 〉=0; Y 〉=0; 0≤x+y＜1.

8. light emitting diode construction as claimed in claim 1, wherein this time bond course is that this compound can be by Al by the III-V group element compound preparation that contains gallium nitride _oIn _pGa _1-o-pThe chemical general formula of N represents, wherein o 〉=0; P 〉=0; 0≤o+p＜1.

9. light emitting diode construction as claimed in claim 1, wherein this first electrode and second electrode are to be the metal electrode of the formed monobasic of metal, binary or the alloy more than the binary, and this metal is selected from the group that is made up of indium, tin, zinc, nickel, gold, chromium, cobalt, cadmium, aluminium, vanadium, silver, titanium, tungsten, platinum, palladium, rhodium and ruthenium.

10. light emitting diode construction as claimed in claim 9, wherein the thickness range of this first electrode or second electrode is 1～10, between 000 nanometer.

11. light emitting diode construction as claimed in claim 1 wherein between this contact layer and this second electrode, further comprises a conduction shape film, its thickness range is 1～1, between 000 nanometer.。

12. light emitting diode construction as claimed in claim 11, wherein this conductivity type film is that wherein this metal is to be selected from the group that is made up of indium, tin, zinc, nickel, gold, chromium, cobalt, cadmium, aluminium, vanadium, silver, titanium, tungsten, platinum, palladium, rhodium and ruthenium by the formed monobasic of metal, binary or the oxide film more than the binary or the prepared transparent conductive oxide layer of metal alloy.

13. light emitting diode construction as claimed in claim 11, wherein this conductivity type film is prepared by having the formed monobasic of high-reflectivity metal, binary or an alloy more than the binary, wherein this to have high-reflectivity metal be to be selected from the group that is made up of aluminium, silver, platinum, palladium, rhodium, ruthenium, titanium, gold, nickel and copper.

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