CN1610000A

CN1610000A - Magnetoresistive element, magnetic memory cell, and magnetic memory device

Info

Publication number: CN1610000A
Application number: CNA2004100877325A
Authority: CN
Inventors: 上岛聪史; 岛泽幸司; 羽立等
Original assignee: TDK Corp
Current assignee: TDK Corp
Priority date: 2003-10-21
Filing date: 2004-10-21
Publication date: 2005-04-27
Anticipated expiration: 2024-10-21
Also published as: JP2005129587A; EP1528569A3; EP1528569A2; EP1528569B1; US20050117386A1; US7002840B2; CN1610000B; JP4438375B2

Abstract

The present invention provides a magnetic memory device capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in write lines and having a high degree of flexibility in designing. A magneto-resistive element has: a magnetic yoke disposed annularly in a circumferential direction so as to surround a write word line and a write bit line, and having a pair of open ends facing each other while sandwiching a gap provided in a part in the circumferential direction; and a stacked body including a second magnetic layer of which magnetization direction changes according to an external magnetic field and a pair of end faces. The stacked body is disposed in the gap so that each of the pair of end faces and each of the pair of open ends face each other. With the configuration, magnetization of the second magnetic layer can be efficiently inverted and, as compared with the case where the stacked body and the magnetic yoke are in contact with each other, the material of the stacked body can be selected from a wider range and the magnetic and electric performances of the stacked body can be sufficiently displayed.

Description

Magneto-resistance effect element, magnetic cell and magnetic store

Technical field

The present invention relates to contain magneto-resistance effect element, the magnetic cell of the sense magnetosphere that direction of magnetization changes with the external magnetic field and utilize the direction of magnetization of the sense magnetosphere in this magneto-resistance effect element, the magnetic cell to change the magnetic store that carries out the information record, reads.

Background technology

As the general-purpose storage that adopts in the signal conditioning packages such as computing machine and communication facilities, what use traditionally is DRAM (Dynamic Randomaccess Memory) and SRAM volatile memory such as (StaticRAM).In these volatile memory, in order to keep storage, must constantly provide electric current, refresh.And in case dump, full detail will be lost, and therefore except these volatile memory, as the means that are used for recorded information, must design nonvolatile memory, for example adopt and refresh formula EEPROM and magnetic hard disk device etc.

In these nonvolatile memories, the high speed that accompanying information is handled, the high speed of access becomes important problem.In addition, follow popularizing rapidly and high performance of portable information device, advance rapidly with can be no matter when, anywhere can both carry out the information equipment exploitation of the so-called ubiquitous calculating (ubiquitous computing) of information processing as target.As the Primary Component of this information equipment development centre, seek to develop nonvolatile memory energetically corresponding to high speed processing.

In the high speed of nonvolatile memory, as otherwise effective technique, will be according to the direction of magnetization of ferromagnetic layer whose easy magnetizing axis the magnetic memory element of canned data to be arranged in rectangular MAGNETIC RANDOM ACCESS MEMORY (below be called MRAM:Magnetic Randomaccess Memory) be technique known.In MRAM, can utilize the combination of direction of magnetization in 2 ferromagnetism bodies, recorded information.And be parallel situation, or the resistance variations (being the variation of curtage) that produces of antiparallel situation by the detection of magnetized direction for the direction as a certain benchmark, carry out reading of canned data.Because utilize this principle, so in order to carry out stable writing and reading, importantly resistance change rate will be tried one's best greatly in MRAM.

The MRAM of practicability is the MRAM that utilizes huge magnetic resistance (GMR:Giant Magneto-Resistive) effect at present.The GMR effect is when disposing each magnetosphere making 2 layers of magnetospheric easy axis become parallel to each other, if the direction of magnetization of each layer is parallel along easy magnetizing axis, if resistance value minimum then is antiparallel, the then phenomenon of resistance value maximum.Have the MRAM (following note is made GMR-MRAM) of the GMR element of this GMR effect as utilization, for example disclosed technology is known in patent documentation 1.

With further raising storage speed and access speed is target, proposes recently to replace GMR-MRAM with the MRAM (following note is made TMR-MRAM) with the TMR element that utilizes tunnel magneto-resistance effect (TMR:Tunneling Magneto-Resistive).The TMR effect effect that to be the tunnel current mobile by insulation course change according to the relative angle of the direction of magnetization between 2 layers of ferromagnetic layer whose that clip insulation course (tunnel barrier layer) as thin as a wafer.When the direction of magnetization in 2 layers of ferromagnetic layer whose is parallel to each other, the resistance value minimum, mutually during antiparallel, the resistance value maximum.In TMR-MRAM, if the TMR element for example is " CoFe/ aluminum oxide/CoFe " this structure, then resistance change rate is high by about 40%, in addition because resistance value is also big, if therefore with semiconductor devices combination such as MOSFET, then be easy to coupling.So, compare with GMR-MRAM, obtain higher output easily, can expect the raising of memory capacity and access speed.In TMR-MRAM, electric current flows on as the lead that is disposed near the writing line the TMR element, thereby current field is changed, and utilizes this point, and the direction that can make the magnetosphere direction of magnetization of TMR element become appointment is come canned data.As the method for reading canned data, well-known have make electric current in the method that flows, detects the resistance variations of TMR element perpendicular to the direction of tunnel barrier layer.About this TMR-MRAM technology, open in patent documentation 2 or patent documentation 3.

In addition, improve for the requirement as the more densification of magnetic memory element recently, the miniaturization of TMR element also necessitates thereupon.The TMR element is got over miniaturization, because the counter magnetic field that its both ends magnetic pole causes influence, for direction of magnetization in the magnetosphere (magnetic free layer) that makes canned data is consistent with assigned direction, just need big magnetic field more, the tendency of write current required when increasing writing information is arranged more.At this problem, propose around near the lead the TMR element (writing line), form the structure (for example with reference to patent documentation 4) of closed magnetic circuit with free layer.According to patent documentation 4, because the free layer relevant with record forms closed magnetic circuit, therefore the harmful effect that can avoid counter magnetic field to cause can realize the magnetic store that integrated level is high.And, in this case, because therefore 2 writing line both sides can carry out magnetized counter-rotating expeditiously by the inboard of closed magnetic circuit.

No. 5343422 instructions of (patent documentation 1) United States Patent (USP)

No. 5629922 instructions of (patent documentation 2) United States Patent (USP)

(patent documentation 3) spy opens flat 9-91949 communique

(patent documentation 4) spy opens the 2001-273759 communique

Summary of the invention

But, in having above-mentioned patent documentation 4, in the magnetic cell of disclosed closed-flux structure,, therefore on material is selected, can be limited by the consideration of magnetic coupling state etc. because the closed circuit layer of magnetic contacts with each other with the magnetic free layer.So the restriction on material is selected might hinder the magnetic characteristic that improves in the TMR element.In addition, in order to adapt to further densification requirement, must further improve and write efficient.

The present invention proposes in view of this problem, its purpose is to provide a kind of can the utilization expeditiously by lead (writing line) to go up the electric current formed magnetic field of flowing, stably the information of carrying out writes, and degree of freedom is high in design magneto-resistance effect element, magnetic cell and magnetic store.

Magneto-resistance effect element of the present invention have (1) for along surrounding lead on the subregion of the bearing of trend of lead along the configuration of loopback direction ring-type, comprise across gap that the part on the loopback direction is provided with simultaneously and the yoke of a pair of open end of subtend and (2) comprise sense magnetosphere that direction of magnetization changes with the external magnetic field and the duplexer with a pair of end face mutually, duplexer is configured in the gap, and what make each end face of a pair of end face and a pair of open end respectively holds mutual subtend.Here, " mutually subtend " mean not contact mutually and do not have and electricly go up annexation and relative state.

Magnetic cell of the present invention is the magnetic cell with a pair of magneto-resistance effect element, each of a pair of magneto-resistance effect element all has (1) in order to dispose along loopback direction ring-type along surrounding lead on the subregion of lead bearing of trend, have simultaneously across gap that the part on the loopback direction is provided with and the yoke of a pair of open end of subtend and (2) comprise sense magnetosphere that direction of magnetization changes with the external magnetic field and the duplexer with a pair of end face mutually, duplexer is configured in the gap, and what make each end face of a pair of end face and a pair of open end respectively holds mutual subtend.

Be provided with (1) first writing line in the magnetic store of the present invention, (2) intersect with first writing line and extend, corresponding to the part of the intersection region of first writing line on parallel with first writing line and a pair of magneto-resistance effect element is contained in second writing line that constitutes and (3) and the magnetic cell that constitutes, each of a pair of magneto-resistance effect element all is provided with (1) along disposing along loopback direction ring-type for surrounding first and second writing line on a part of zone of first and second writing line bearing of trend, have simultaneously across the gap that on the part of loopback direction, is provided with and yoke and (2) of a pair of open end of subtend comprise the sense magnetosphere that direction of magnetization changes with the external magnetic field mutually, and has a duplexer of a pair of end face, duplexer is configured in the gap, and what make each end face of a pair of end face and a pair of open end respectively holds mutual subtend.

In magneto-resistance effect element of the present invention, magnetic cell and magnetic store, can feel the magnetization inversion of magnetosphere effectively, and compare with the interconnected situation of duplexer and yoke, enlarged the material range of choice that constitutes duplexer.

In magneto-resistance effect element of the present invention, magnetic cell and magnetic store, be preferably between each end of each end face of a pair of end face and a pair of open end insulation course is set.In addition, the area of section perpendicular to the loopback direction of yoke is preferably on a pair of open end to minimum.

At magneto-resistance effect element of the present invention, in magnetic cell and the magnetic store, be provided with (1) along extending in the direction of each end that leaves a pair of open end respectively, across the gap and the mutual a pair of subtend yoke of subtend, (2) be connected with an end of the opposite side with open end of a pair of subtend yoke respectively, and mutually subtend and an araeosystyle yoke of extending along the stacked direction of duplexer and (3) are each an end beam type yoke connected to one another araeosystyle yoke and the opposite side of a pair of subtend yoke, can make in total mutually at least one pair of the pillar yoke of a pair of magneto-resistance effect element and constitute.In addition, at this moment feeling magnetosphere preferably is arranged on on one deck with a pair of subtend yoke.

According to magneto-resistance effect element of the present invention, magnetic cell and magnetic store, has (1) along disposing along loopback direction ring-type in order to surround lead (first and second writing line) on the subregion of lead (first and second writing line) bearing of trend, have simultaneously across gap that the part on the loopback direction is provided with and the yoke of a pair of open end of subtend and (2) comprise sense magnetosphere that direction of magnetization changes with the external magnetic field and the duplexer with a pair of end face mutually, duplexer is configured in the gap, what make each end face of a pair of end face and a pair of open end respectively holds mutual subtend, therefore can feel the magnetization inversion of magnetosphere effectively, compare with the interconnected situation of duplexer and yoke simultaneously, the material of duplexer can be selected to constitute in a wider context, the magnetic property and the electrical property of duplexer can be given full play to.

Description of drawings

Fig. 1 is the integrally-built block diagram of magnetic store in expression one embodiment of the invention.

Fig. 2 is the planimetric map of expression magnetic store writing line structure shown in Figure 1.

Fig. 3 is the partial plan of major part structure of the storage unit groups of expression magnetic store shown in Figure 1.

Fig. 4 is the skeleton view of major part perspective structure of the storage unit groups of expression magnetic store shown in Figure 1.

Fig. 5 is structure on the direction of arrow of cutting is cut in expression along the V-V line of a magnetic cell shown in Figure 3 sectional view.

Fig. 6 is decomposed into the sectional view that 2 TMR elements are represented with magnetic cell shown in Figure 5 conceptive.

Fig. 7 is another part planimetric map of the storage unit groups major part structure of expression magnetic store shown in Figure 1.

Fig. 8 is the sectional view of expression along the structure of cutting the cross section of the VIII-VIII line of magnetic cell shown in Figure 7.

Fig. 9 is the circuit diagram of expression magnetic store circuit structure shown in Figure 1.

Figure 10 (A) is first key diagram of the relation of write current direction and backflow magnetic direction (direction of magnetization) in the cross section structure of expression magnetic cell shown in Figure 5.

Figure 10 (B) is second key diagram of the relation of write current direction and backflow magnetic direction (direction of magnetization) in the cross section structure of expression magnetic cell shown in Figure 5.

Figure 11 (A) is first's enlarged drawing in the circuit structure of presentation graphs 9.

Figure 11 (B) is a second portion enlarged drawing in the circuit structure of presentation graphs 9.

Figure 12 is the amplification profile of an operation in the manufacture method of expression magnetic store shown in Figure 1.

Figure 13 is the continue amplification profile of an operation of Figure 12 of expression.

Figure 14 is the continue amplification profile of an operation of Figure 13 of expression.

Figure 15 is the continue amplification profile of an operation of Figure 14 of expression.

Figure 16 is the continue amplification profile of an operation of Figure 15 of expression.

Figure 17 is the continue amplification profile of an operation of Figure 16 of expression.

Figure 18 is the continue amplification profile of an operation of Figure 17 of expression.

Figure 19 is the continue amplification profile of an operation of Figure 18 of expression.

Figure 20 is the sectional view of expression as the major part cross section structure of variation 1 in the magnetic memory element shown in Figure 1.

Figure 21 is the sectional view of expression as the major part cross section structure of variation 2 in the magnetic memory element shown in Figure 1.

Figure 22 is the sectional view of expression as the major part cross section structure of variation 3 in the magnetic memory element shown in Figure 1.

[symbol description]

1 storage unit; 1a, 1b magnetoresistance (TMR) element; 2 first magnetospheres; 3 tunnel barrier layers; 4 yokes; K4a, K4b open end; 5 write bit line; 6 write word line; 6F first layered portion; 6S second layered portion; 7 dielectric films; 8 second magnetospheres; 10 parallel portion; 16 backflow magnetic fields; The S20 duplexer; 31 substrates, 32 sense word line; 33 readout bit lines; 34 total parts; 41 subtend yokes; 42 pillar yokes; 43 beam type yokes; 46 write the word line extraction electrode; 47 write the bit line extraction electrode; 48 sense word line extraction electrodes; 49 readout bit line extraction electrodes;

Embodiment

With reference to the accompanying drawings, describe embodiments of the invention in detail.

At first, the magnetic memory structure of one of embodiment of the invention is described with reference to Fig. 1～Fig. 9.Fig. 1 is the integrally-built concept map of magnetic store in the expression present embodiment.The magnetic store of present embodiment has address buffer 51, data buffer 52, steering logic portion 53, storage unit groups 54, the first Drive and Control Circuit portion 56, the second Drive and Control Circuit portion 58, external address input terminal A0～A20 and external data terminal D0～D7.

Storage unit groups 54 has the matrix structure that a plurality of storage unit 1 that have 1 pair of tunnel magnetoresistive effect element (below be called the TMR element) is arranged in mutually perpendicular word-line direction (directions X) and bit line direction (Y direction).Storage unit 1 is the least unit of storage data in the magnetic store, is a concrete example corresponding to " magnetic cell " among the present invention.To describe storage unit 1 in detail below.

The first Drive and Control Circuit portion 56 comprises address decoder circuit 56A on the Y direction, sense amplifier circuit 56B, current driving circuit 56C, and the second Drive and Control Circuit portion 58 comprises address decoder circuit 58A on the directions X, constant current circuit 58B, current driving circuit 58C.

Address decoder circuit

56A, 58A select corresponding to the transliteration sign indicating number line 72 described later (aftermentioned) of the address signal that is transfused to and position decoding line 71 (aftermentioned).Y direction sense amplifier circuit 56B and directions X constant current circuit 58B are the circuit that drives when reading action, and Y direction and directions X

current driving circuit

56C and 58C are the circuit that drives when carrying out write activity.

The many positions decoding lines 71 that read current flow through when Y direction sense amplifier circuit 56B moved by reading with storage unit groups 54 are connected.The many transliteration sign indicating number lines 72 that read current flow through when similarly, directions X constant current circuit 58B moved by reading with storage unit groups 54 are connected.

The bit line 5 (aftermentioned) that writes that Y directional current driving circuit 56C needs during by write activity with storage unit groups 54 is connected.Similarly, the word line 6 (aftermentioned) that writes that needs during by write activity with storage unit groups 54 of directions X current driving circuit 58C is connected.

Address buffer 51 has external address input terminal A0～A20, by Y direction address wire 57, directions X address wire 55, be connected simultaneously with the Y direction address decoder circuit 56A in the first Drive and Control Circuit portion 56, the directions X address decoder circuit 58A in the second Drive and Control Circuit portion 58.Address buffer 51 is from the address signal of external address input terminal A0～A20 input from the outside, and the buffer amplifier (not shown) that is provided with by inside is amplified to the voltage level that necessitates in Y direction address decoder circuit 56A, directions X address decoder circuit 58A.In addition, address buffer 51 has following function: be exactly to make the address signal after the amplification be divided into 2, by Y direction address wire 57, output to Y direction address decoder circuit 56A, by directions X address wire 55, output to directions X address decoder circuit 58A simultaneously.

Data buffer 52 is made of input buffer 52A, output buffer 52B, has external data terminal D0～D7, is connected with steering logic portion 53 simultaneously, moves by the output control signal 53A from steering logic portion 53.Input buffer 52A has following function: promptly write with data bus 61 by Y direction and directions X, 60, respectively with the first Drive and Control Circuit portion 56 in Y directional current driving circuit 56C, directions X current driving circuit 58C in the second Drive and Control Circuit portion 58 connects, when in storage unit groups 54, carrying out write activity, the signal voltage of incoming external data terminal D0～D7, buffer amplifier (not shown) by inside is amplified to necessary voltage level, write with data bus 60 and Y direction by directions X then and write usefulness data bus 61, be sent to directions X current driving circuit 58C, Y directional current driving circuit 56C.Output buffer 52B has following function: promptly read by the Y direction and use data bus 62 to be connected with Y direction sense amplifier circuit 56B, in reading storage unit groups 54 during the canned data signal, the buffer amplifier (not shown) that is provided with by inside will amplify from the information signal of Y direction sense amplifier circuit 56B input, outputs to external data terminal D0～D7 with Low ESR then.

Steering logic portion 53 has substrate to be selected terminal CS and writes to allow terminal WE, is connected with data buffer 52.This steering logic portion 53 has following function: obtain from order to selecting selecting the signal voltage of terminal CS and from the signal voltage that allows terminal WE that writes that writes enabling signal in order to output as the substrate of the unit of reading and write object among a plurality of storage unit groups 54, and will export control signal 53A and output to data buffer 52.

The following describes in the magnetic store shown in Figure 1 the structure of write activity for information about.

Fig. 2 is the concept map of the major part planar structure of relevant write activity in the expression storage unit groups 54.As shown in Figure 2, the magnetic store of present embodiment comprises many and writes

bit line

5a, 5b and write with many that

bit line

5a, 5b intersect respectively and many of extending write word line 6, writing

bit line

5a, 5b and writing on each zone that word line 6 intersects, making to write

bit line

5a, 5b and write parallel portion 10a, the 10b that word line 6 has extension parallel to each other and constitute.Specifically, as shown in Figure 2, write word line 6 and extend along directions X, and write bit line 5a and write bit line 5b arranged side by side mutually, extend along the Y direction with linearity so that rectangle is wavy.Write rectangle in the word line 6 wavy rising part and sloping portion and write

bit line

5a, 5b and form a plurality of parallel portion 10a, 10b jointly.Storage unit 1 is set with writing on each zone that word line 6 intersects writing

bit line

5a, 5b, makes it comprise parallel portion 10a separately, at least a portion of 10b.Storage unit 1 is made of TMR element 1a and TMR element 1b, and TMR element 1a is arranged on and writes bit line 5a and write on each zone that word line 6 intersects, and TMR element 1b is arranged on and writes bit line 5b and write on each zone that word line 6 intersects.Here, TMR element 1a and TMR element 1b are 1 concrete examples corresponding to " 1 pair of magneto-resistance effect element " of the present invention.

Make respectively current direction write

bit line

5a, 5b and write word line 6 from Y directional current driving circuit 56C, directions X current driving circuit 58C.Here, flow through the electric current that writes bit line 5a and flow through the electric current one that writes bit line 5b and be decided to be opposite direction, for example, shown in arrow among Fig. 2, be made as at the direction of current that writes bit line 5a+situation of Y direction under, the direction of current that writes bit line 5b is-Y direction.So, suppose that flowing through the direction of current that writes word line 6 in this case all is+directions X (from left to right) on paper, then flow through TMR element 1a inside write bit line 5a and write the direction of current of word line 6 parallel to each other.Flow through TMR element 1b inside write bit line 5b and write the direction of current of word line 6 also parallel to each other.In addition, needn't distinguish especially under the situation of direction of current below, write bit line 5a, the 5b simple table is shown and writes bit line 5.In addition, write word line 6 and be a concrete example, write bit line 5 and be a concrete example corresponding to " second writing line " of the present invention corresponding to " first writing line " of the present invention.

Fig. 3 more specifically represents the major part planar structure as the storage unit groups 54 of concept map shown in Figure 2.Shown in Figure 3 write bit line 5a, 5b, write word line 6 and storage unit 1 (TMR element 1a, 1b) is corresponding with Fig. 2.TMR element 1a, 1b are configured in parallel portion 10a, the 10b that writes bit line 5a, 5b and write word line 6.TMR element 1a, 1b have respectively and comprise duplexer S20a, S20b and yoke 4a, the 4b that feels magnetosphere, write bit line 5a, 5b among parallel portion 10a, the 10b and write the magnetic field (being the external magnetic field among yoke 4a, the 4b) that both electric currents of word line 6 produce by flowing through, the direction of magnetization of sense magnetosphere is changed.Writing word line 6 comprises the first layered portion 6F that is arranged on (first layering described later in L1) in the layer identical with writing bit line 5a, 5b and these 2 layered portion of the second layered portion 6S that L2 (aftermentioned) forms in second layering different with it and constitutes.The first layered portion 6F is connected on electric with the articulamentum 6T (aftermentioned) that the second layered portion 6S forms by aluminium (Al), copper conductive materials such as (Cu).Thus, write word line 6 and stride across along what the Y direction was extended along directions X and write bit line 5a, 5b, bring into play function as 1 lead that extends along directions X on the whole.In this case, write bit line 5a, 5b and the first layered portion 6F among parallel portion 10a, the 10b and be arranged on L1 in first layering, mutual insulating on electric.

Be provided with respectively at the two ends that respectively write bit line 5 and write bit line extraction electrode 47.An electrode that respectively writes bit line extraction electrode 47 is connected with Y directional current driving circuit 56C respectively, the final ground connection of another electrode and connecting.Similarly, be provided with respectively at the two ends that respectively write word line 6 and write word line extraction electrode 46.An electrode that respectively writes word line extraction electrode 46 is connected with directions X current driving circuit 58C respectively, the final ground connection of another electrode and connecting.

Fig. 4 is the enlarged perspective of storage unit 1.Fig. 5 represents the summary cross section structure of the storage unit 1 on the direction of arrow of V-V cutting line shown in Figure 3.In addition, Fig. 6 is the figure that magnetic cell shown in Figure 51 is represented at the conceptive TMR of being decomposed into element 1a, TMR element 1b.In addition, Fig. 5 and Fig. 6 are the sketch maps that is used for clear and definite thin portion structure, and the size of storage unit 1 shown in Figure 4 and shape are not necessarily consistent.

As Fig. 4～shown in Figure 6, storage unit 1 has a pair of TMR element 1a, the 1b that comprises yoke 4a, 4b and duplexer S20a, S20b respectively.In first layering of the lamination surface that is being parallel to duplexer S20a, S20b on the zone that surrounds by yoke 4a, 4b L1 make write bit line 5a, 5b and write word line 6 (the first layered portion 6F) adjacent to each other and arrange (Fig. 5).Write word line 6 (the first layered portion 6F), write bit line 5a, 5b and yoke 4a, 4b by dielectric film 7a, 7b mutual insulating on electric.Duplexer S20a is configured in the gap of yoke 4a, makes that each end face of a pair of end face K20a (K21, K22) and a pair of open end K4a's (K41, K42) respectively hold mutual subtend.Between a pair of end face K20a and a pair of open end K4a, form for example by aluminium oxide (Al respectively ₂O ₃) wait the insulation course (not shown) of composition.Similarly, duplexer S20b is configured in the gap of yoke 4b, makes that each end face of a pair of end face K20b (K23, K24) and a pair of open end K4b's (K43, K44) respectively hold mutual subtend.Between a pair of end face K20b and a pair of open end K4b, form for example by Al respectively ₂O ₃Deng the insulation course of forming (not shown).In addition, duplexer S20a, S20b are being sandwiched in respectively between teat 32T and conductive layer 36a, the 36b (aftermentioned) on the stacked direction (Z direction), and are connected on electric with them.Pair of conductive layer 36a, 36b constitute the part of a pair of schottky diode 75a, 75b (aftermentioned), and the other end of schottky diode 75a, 75b is connected with readout bit line 33a, the 33b (aftermentioned) that extend along the Y direction.Schottky diode 75a, 75b are embedded in the substrate 31 (aftermentioned).In addition, duplexer S20a, S20b and the face opposite side of face that connects pair of conductive layer 36a, 36b, promptly the face of zone one side that is surrounded by yoke 4a, 4b is connected with teat 32T along the extension of Y direction.Teat 32T constitutes along the part of the sense word line 32 of directions X extension.Though teat 32T is connected with yoke 4a, 4b in Fig. 5, also can be by insulation course mutual insulating on electric.In addition, write word line 6 (the first layered portion 6F) and write bit line 5a, 5b and sense word line 32 (teat 32T) mutual insulating on electric.

Be provided with among the TMR element 1a in the storage unit 1: (1) writes bit line 5a on the edge and writes the subregion of the bearing of trend of word line 6, promptly write bit line 5a and write on the parallel zone (parallel portion 10a) of word line 6, for surround write the bit line 5a and the first layered portion 6F around along the configuration of loopback direction, have across gap that the part on the loopback direction the is provided with yoke 4a of a pair of open end K4a (K41, K42) of subtend mutually; And (2) duplexer S20a of comprising the second magnetosphere 8a of the sense magnetosphere that changes with the external magnetic field as direction of magnetization and making electric current flow and constitute along direction perpendicular to lamination surface.Make a pair of open end K4a along directions X across the setting of duplexer S20a subtend.TMR element 1b is provided with: (1) writes bit line 5b on the edge and writes the subregion of the bearing of trend of word line 6, promptly write bit line 5b and write on the parallel zone (parallel portion 10b) of word line 6, for surround write the bit line 5b and the first layered portion 6F around along the configuration of loopback direction, have across the gap that on the partial loopback direction, the is provided with yoke 4b of a pair of open end K4b (K43, K44) of subtend mutually; And (2) duplexer S20b of comprising the second magnetosphere 8b of the sense magnetosphere that changes with the external magnetic field as direction of magnetization and making electric current flow and constitute along direction perpendicular to lamination surface.Make a pair of open end K4b along directions X, be provided with across duplexer S20b subtend.A pair of TMR element 1a, 1b be the part of total yoke 4a, 4b mutually, promptly total part 34.

As Fig. 5 and shown in Figure 6, duplexer S20a, S20b comprise the first magnetosphere 2a that the

second magnetosphere

8a, 8b,

tunnel barrier layer

3a, 3b and direction of magnetization be fixed, the tmr film of 2b successively from writing bit line 5 and writing word line 6 one sides, have the structure that electric current is flowed along the direction perpendicular to lamination surface.In order to illustrate the structure of duplexer S20a, S20b, in Fig. 5 and Fig. 6, their size is represented than exaggerating relative to the earth on every side.

On a pair of

TMR element

1a, 1b, make the direction of magnetization counter-rotating of the second magnetosphere 8a and the second magnetosphere 8b and when becoming mutual antiparallel, for the inside by pair of

magnetic yoke

4a, 4b becomes same direction by the direction that writes

bit line

5a, 5b and write the backflow magnetic field that word line 6 forms in total part, the magnetic flux density in backflow magnetic field increases.Therefore, backflow magnetic field can be more effectively utilized, the needed electric current of magnetization inversion of

yoke

4a, 4b and the

second magnetosphere

8a, 8b can be reduced to make more.In addition,, can dwindle the formation area of storage unit 1 simultaneously, make the high capacity of canned data become possibility because therefore the part of total yoke 4 can form

TMR element

1a, 1b effectively.

If between the

first magnetosphere

2a, 2b and the

second magnetosphere

8a, 8b, on lamination surface, apply vertical voltage, then duplexer S20a, S20b, can pass through

tunnel barrier layer

3a, 3b of the electronics of the

first magnetosphere

2a, 2b for example, move to the

second magnetosphere

8a, 8b, tunnel current can flow.This tunnel current according to the interface portion of tunnel barrier layer 3 in the spin of the

first magnetosphere

2a, 2b and the

second magnetosphere

8a, 8b spin relative angle and change.That is to say, when the spin of the spin of the

first magnetosphere

2a, 2b and the

second magnetosphere

8a, 8b is parallel to each other, the resistance value minimum, when antiparallel, the resistance value maximum.Utilize these resistance values, change rate of magnetic reluctance (MR ratio) (1) definition by formula: (MR ratio)=dR/R ... (1)

Here, " dR " is the spin resistance value during with antiparallel poor when parallel to each other, and " R " be the resistance value when parallel to each other for spinning.

Depend on the thickness T of tunnel barrier layer 3 strongly for the resistance value of tunnel current (below be called tunnel resistor Rt).As shown in Equation (2), pressing exponential function at area of low pressure tunnel resistor Rt for the thickness T of tunnel barrier layer 3 increases.

Rt∝exp(2χ ^T)，χ＝{8л ²m ^*(φ·Ef) ^0.5}/h ……(2)

Here, " φ " expression barrier layer height, " m ^*" expression electronics effective mass, " Ef " represents Fermi level, h represents Planck's constant.In general, in the memory element that adopts the TMR element, in order to realize and the coupling of semiconductor devices such as transistor that tunnel resistor Rt is preferably several 10k Ω (μ m) ²About.But,, require tunnel resistor Rt less than 10k Ω (μ m) in order to realize magnetic store middle-high densityization and high-speedization of action ², preferably less than 1k Ω (μ m) ²So in order to reach above-mentioned tunnel resistor Rt, the thickness T that requires tunnel barrier layer 3 is less than 2nm, preferably less than 1.5nm.

By the thickness T of attenuate

tunnel barrier layer

3a, 3b, can reduce tunnel resistor Rt always, but since with the concavo-convex leakage current that causes of the combination interface of the

first magnetosphere

2a, 2b and the

second magnetosphere

8a, 8b, MR is than descending.In order to prevent this point, the thickness T of

tunnel barrier layer

3a, 3b must have and reaches the thickness that does not flow through leakage current, and specifically, required thickness is greater than 0.3nm.

Duplexer S20a, S20b preferably have coercive force difference type structure, and make the coercive force of the coercive force of the first magnetosphere 2a, 2b greater than the second magnetosphere 8a, 8b.Specifically, the coercive force of first magnetosphere 2 is with greater than (50/4 π) * 10 ³A/m is more preferably greater than (100/4 π) * 10 ³A/m.Be subjected to the influence in unnecessary magnetic fields such as external disturbance magnetic field because like this, just can prevent direction of magnetization among the first magnetosphere 2a, the 2b.The first magnetosphere 2a, 2b are ferro-cobalt (CoFe) formation of 5nm by thickness for example, in addition, can adopt simple substance cobalt (Co), cobalt-platinum alloy (CoPt), Perminvar (NiFeCo) etc. in the first magnetosphere 2a, 2b.The second magnetosphere 8a, 8b can be by simple substance cobalt (Co), ferro-cobalt (CoFe), cobalt-platinum alloy (CoPt), Rhometal (NiFe) or Perminvar formations such as (NiFeCo).In addition, the direction of magnetization stabilization under parallel to each other or antiparallel state in order to make the first magnetosphere 2a, 2b and the second magnetosphere 8a, 8b requires the easy magnetizing axis of the first magnetosphere 2a, 2b and the second magnetosphere 8a, 8b parallel.

Yoke 4a, 4b extend, and at least a portion that writes bit line 5a, 5b and write parallel portion 10a, 10b in the word line 6 is surrounded, and produce backflow magnetic field by yoke 4a, 4b inside by the electric current that flows through parallel portion 10a, 10b.In more detail, as shown in Figure 6, yoke 4a comprises (1) along leaving a pair of open end K4a (K41 respectively, the direction of each end K42) is extended, across the gap and the mutual a pair of subtend yoke 41a (411 of subtend, 412), (2) respectively with a pair of subtend yoke 41a (411,412) with open end K4a (K41, K42) end of an opposite side connects, mutual subtend, an and araeosystyle yoke 42a (421 who extends along the stacked direction (Z direction) of duplexer S20a, 422) and (3) with an araeosystyle yoke 42a (421,422), with a pair of subtend yoke 41a (411,412) each end beam type yoke connected to one another 43a of an opposite side and constituting.Here, the second magnetosphere 8a becomes with one deck a pair of subtend yoke 41a (411,412) to constitute among the duplexer S20a.And yoke 4b comprises: (1) along extend in direction of each end that leaves a pair of open end K4b (K43, K44) respectively, across the gap and the mutual a pair of subtend yoke 41b (413,414) of subtend; (2) respectively with a pair of subtend yoke 41b (413,414), be connected with an end of the opposite side of open end K4b (K43, K44), mutually subtend and the araeosystyle yoke 42b (422,423) that extends along the stacked direction (Z direction) of duplexer S20b; And (3) with an araeosystyle yoke 42b (422,423), constitute with each end beam type yoke connected to one another 43b of the opposite side of a pair of subtend yoke 41b (413,414).Here, the second magnetosphere 8b and a pair of subtend yoke 41b (413,414) become same one deck among the duplexer S20b.The total mutually pillar yoke 422 of TMR element 1a and TMR element 1b as shown in Figure 5, forms total part 34.In beam type yoke 43a, 43b the is arranged on second layering L2 identical with the second layered portion 6S.

The direction of magnetization separately of this yoke 4a, 4b is because of reversing respectively by its inner backflow magnetic field that forms.The direction of magnetization counter-rotating of yoke 4a, the 4b that causes along with this backflow magnetic field, the direction of magnetization counter-rotating of the second magnetosphere 8a, 8b, the second magnetosphere 8a, 8b have just had the function as the accumulation layer of canned data.Yoke 4a, 4b for example form by containing in nickel (Ni), iron (Fe) and the cobalt (Co) at least a metal.Area of section perpendicular to the loopback direction of yoke 4a, 4b becomes minimum in a pair of open end K4a, K4b.Specifically, for example, as shown in Figure 5, a pair of subtend yoke 41a, 41b are more little near duplexer S20a, S20b more along the width of Y direction among yoke 4a, the 4b, are minimum on a pair of open end K4a, K4b.According to this configuration, write bit line 5a, 5b and write word line 6 and form backflow magnetic field in case flow through, just can in duplexer S20a, S20b (especially at the second magnetosphere 8a, 8b), obtain high and the most stable magnetic flux density by yoke 4a, 4b at write current.Therefore, even little write current also can carry out high-level efficiency and stable writing.

To concentrate on

yoke

4a, 4b in order making to write

bit line

5a, 5b and write the current field that word line 6 produces, to require the magnetoconductivity of

yoke

4a, 4b bigger.Specifically, greater than 2000, more preferably greater than 6000.

Any one that writes the bit line 5 and the first layered portion 6F all has the structure of the aluminium (Al) of the titanium nitride (TiN) that stacks gradually for example titanium of thickness 10nm (Ti), thickness 10nm and thickness 500nm.In addition, the second layered portion 6S and articulamentum 6T by with the material of

yoke

4a, 4b identical type for example NiFe form.

Write bit line

5a, 5b and write word line 6 and be not limited to above-mentioned composition, for example also can be by at least a composition the in aluminium (Al), copper (Cu) and the tungsten (Wu).Narrate in the back for the details of write activity that employing writes

bit line

5a, 5b and writes the storage unit 1 of word line 6.

In a word, the magnetic store of present embodiment

write bit line

5a, 5b and write word line 6 on the zone that surrounds by

yoke

4a, 4b, to be parallel in first layering of lamination surface of duplexer S20a, S20b L1 adjacent to each other and arrange, and therefore forms simpler structure at stacked direction.In addition, duplexer S20a is configured in the gap of yoke 4a, make that each end face of a pair of end face K20a and a pair of open end K4a's respectively hold mutual subtend, same duplexer S20b is configured in the gap of yoke 4b, make that each end face of a pair of end face K20b and a pair of open end K4b's respectively hold mutual subtend, therefore compare with the interconnected situation of duplexer and yoke, feel bad the restriction of magnetic coupling state etc., can in big scope, select the material of formation duplexer S20b.Therefore, can obtain to have yoke 4a, the 4b of the closed magnetic circuit of passing through in formation backflow magnetic field, give full play to duplexer S20a, S20b simultaneously as the magnetic characteristic of

TMR element

1a, 1b.

Below with reference to Fig. 7 and Fig. 8, illustrate in the magnetic store shown in Figure 1 and read the relevant structure of action with information.Fig. 7 represent with storage unit groups 54 in read the relevant major part planar structure of action, corresponding to the figure of Fig. 3.Fig. 8 represents the cross section structure of the XIII-XIII cutting line place direction of arrow shown in Figure 7.

As shown in Figure 7, respectively dispose a storage unit 1 on each point of crossing of many sense word line 32 and Duo Gen

readout bit line

33a, 33b on corresponding to the XY plane.Here, duplexer S20a, S20b's below by a pair of

schottky diode

75a, 75b (being designated hereinafter simply as

diode

75a, 75b) in the storage unit 1, be connected with a pair of

readout bit line

33a, 33b, and the top and sense word line 32 of duplexer S20a, S20b is connected.

Readout bit line

33a, 33b each of a pair of

TMR element

1a, 1b in each storage unit 1 provides read current, and sense word line 32 will flow through each the read current of

TMR element

1a, 1b and import ground wire.Two ends at each readout bit line 33 are provided with readout bit line extraction electrode 49 respectively.And sense word line extraction electrode 48 is set respectively at the two ends of each sense word line 32.

As shown in Figure 8, the magnetic store of present embodiment make a pair of duplexer S20a, S20b on the zone that comprises storage unit 1 and have across it and the yoke 4a of a pair of open end of subtend, 4b be formed on be provided with as the substrate 31 of diode 75a, the 75b of rectifier cell on and constitute.

Pair of

diodes

75a, 75b contain conductive layer 36a, 36b, epitaxial loayer 37 and substrate 38 successively from duplexer S20a, S20b one side, form the Schottky barrier between conductive layer 36a, 36b and epitaxial loayer 37.Make conductive layer 36a, 36b with the part of the face of epitaxial loayer 37 opposite sides on, be connected with duplexer S20a, S20b, the part beyond it is surrounded by insulation course 31A and insulation course 17.Diode 75a and diode 75b constitute like this, make across duplexer S20a, S20b with

outside yoke

4a, 4b are connected, and also do not have the coupling part on electric mutually.Substrate 38 is n type silicon wafers.In general, on n type silicon wafer, impose phosphorus (P) diffusion of contaminants,, adopt high concentration diffusion to form n by phosphorus as substrate 38 ⁺⁺The silicon wafer of type.And epitaxial loayer 37 becomes n by low concentration diffusion phosphorus ^-Type.Epitaxial loayer 37 by the n-N-type semiconductor N contacts with the conductive layer 36a, the 36b that are made up of metal, produces band gap, forms the Schottky barrier.In addition, pair of

diodes

75a, 75b by articulamentum 33T, are connected with

readout bit line

33a, 33b respectively.

Below with reference to Fig. 9, the circuit structure of reading action in the magnetic store of relevant present embodiment is described.

The circuit system structure figure that Fig. 9 is made up of storage unit groups 54 and sensing circuit thereof.The differential scale-up version that the storage unit 1 of this sensing circuit system is made up of a pair of TMR element 1a, 1b.Here, the information of the difference value that flows through the read current (flow into

TMR element

1a, 1b respectively, flow out to the electric current of common sense word line 32 again from

readout bit line

33a, 33b) of

TMR element

1a, 1b respectively being carried out each storage unit 1 as output is read.

In Fig. 9 each storage unit ranked 1 of storage unit groups 54 and the part sensing circuit that comprises Y direction sense amplifier circuit 56B constitute sensing circuit recurring unit be unit sensing circuit 80 (..., 80n, 80n+1 ...), be configured in side by side and rank direction.The sensing circuit 80n of each unit by a position decoding line 71 (..., 70n, 70n+1 ...) be connected with Y direction address decoder circuit 56A, read usefulness data bus 62 by the Y direction and be connected with output buffer 52B.

Sense word line 32 by being arranged in directions X on storage unit groups 54 (..., 32m, 32m+1 ...) and be arranged in a pair of readout bit line 33a, the 33b of Y direction, form rectangular distribution.Each storage unit 1 be configured in the zone that clips by a pair of

readout bit line

33a, 33b in the position that intersects of sense word line 32 on.The end separately of

TMR element

1a, 1b in each storage unit 1 is connected with

readout bit line

33a, 33b by pair of

diodes

75a, 75b respectively, and the other end separately is connected with common sense word line 32 respectively.

One end of each sense word line 32 respectively by sense word line extraction electrode 48 and each sense switch 83 (..., 83m, 83m+1 ...) connect, and then be connected with common directions X constant current circuit 58B.Each sense switch 83 respectively by transliteration sign indicating number line 72 (..., 72m, 72m+1 ...) be connected with directions X address decoder circuit 58A, making selection signal one input from directions X address decoder circuit 58A is conducting.Directions X constant current circuit 58B has the function that makes the current constant that flows through sense word line 32.

One end of each readout bit line 33 is connected with Y direction sense amplifier circuit 56B respectively by readout bit line extraction electrode 49, and the other end is finally distinguished ground connection.Y direction sense amplifier circuit 56B is provided with 1 by each unit sensing circuit 80, and it has the potential difference (PD) that obtains between a pair of readout bit line 33a, the 33b in constituent parts sensing circuit 80, and amplifies the function of this potential difference (PD).Each Y direction sense amplifier circuit 56B respectively with output line 82 (..., 82n, 82n+1 ...) connect, finally read with data bus 62 and be connected with output buffer 52B by the Y direction.

The following describes the action in the magnetic store of present embodiment.

The write activity of information in the storage unit 1 at first, is described with reference to Fig. 2, Figure 10 (A) and Figure 10 (B).The relation of write current direction and backflow magnetic direction (direction of magnetization) in the cross section structure of the storage unit 1 that Figure 10 (A), Figure 10 (B) expression is shown in Figure 5.Arrow shown on each magnetosphere is represented the direction of magnetization in this magnetized layer in Figure 10 (A), Figure 10 (B).But for yoke 4a, 4b, the magnetic direction of the magnetic circuit that forms in inside is expression together also.Here, the magnetic quilt of the first magnetosphere 2a, 2b is fixed on-directions X.Figure 10 (A), Figure 10 (B) expression write current along mutually same direction in the situation about flowing on the bit line 5 and the first layered portion 6F that writes parallel to each other by storage unit 1.Figure 10 (A) is corresponding to write current direction shown in Figure 2.Figure 10 (A) expression be: write current in TMR element 1a along perpendicular to the direction of paper by in face of own inwards (+Y direction) flow, and produce backflow magnetic field 16a in the direction of the clock, by surrounding the yoke 4a inside that writes the bit line 5a and the first layered portion 6F, write current is flowed by lining (Y direction) in face of oneself along the direction perpendicular to paper in TMR element 1b simultaneously, and produce backflow magnetic field 16b counter clockwise, by surrounding the yoke 4b inside that writes the bit line 5b and the first layered portion 6F.At this moment, the direction of magnetization of the second magnetosphere 8a is-directions X that the direction of magnetization of the second magnetosphere 8b is+directions X.On the other hand, Figure 10 (B) gets situation about doing with the antipodal direction of current of state shown in Figure 10 (A) corresponding to flowing through the direction of current that writes the bit line 5 and the first layered portion 6F.That is to say, what Figure 10 (B) represented is that write current is flowed by lining (Y direction) in face of oneself along the direction perpendicular to paper in TMR element 1a, and produce backflow magnetic field 16a counter clockwise, by surrounding the yoke 4a inside that writes bit line 5a and write word line 6, simultaneously write current in TMR element 1b along perpendicular to the direction of paper by in face of own inwards (+Y direction) flow, and produce backflow magnetic field 16b in the direction of the clock, by surrounding the yoke 4b inside that writes the bit line 5b and the first layered portion 6F.At this moment, the direction of magnetization of the second magnetosphere 8a is+directions X that the direction of magnetization of the second magnetosphere 8b is-directions X.

In the occasion shown in Figure 10 (A), Figure 10 (B), become opposite direction owing to connect the direction of current that writes the bit line 5a and the first layered portion 6F of TMR element 1a with the direction of current that writes the bit line 5b and the first layered portion 6F that connects TMR element 1b, therefore, can regard the direction of backflow

magnetic field

16a, 16b that flows through the pillar yoke 422 (with reference to Fig. 6) of the total part 34 that is equivalent to

yoke

4a, 4b as same direction (is-the Z direction to be+the Z direction in Figure 10 (A) in Figure 10 (B).)

From Figure 10 (A), Figure 10 (B) as can be known: according to connecting writing bit line 5 and writing both backflow magnetic field 16a that electric current produced of word line 6, the direction of 16b of

yoke

4a, 4b by flowing through, it is opposite each other that the second magnetosphere 8a and the direction of magnetization of the second magnetosphere 8b are become, utilize this point can be in storage unit 1 canned data.

That is to say that if electric current flows writing bit line 5 and write word line 6 along same direction, then the direction of magnetization of the

second magnetosphere

8a, 8b just can be stored the diadic information of " 0 " or " 1 " along with the direction of magnetization counter-rotating of

yoke

4a, 4b and change.For example, if make " 0 " state corresponding to Figure 10 (A), promptly wherein the second magnetosphere 8a is magnetized to-state of directions X and the second magnetosphere 8b is magnetized to+directions X, then make " 1 " state corresponding to Figure 10 (B), promptly wherein the second magnetosphere 8a is magnetized to+state of directions X and the second magnetosphere 8b is magnetized to-directions X, thereby can store.

In this case, if the direction of magnetization of the

first magnetosphere

2a, 2b and the

second magnetosphere

8a, 8b is parallel in

TMR element

1a, 1b, then become the low resistance state that big tunnel current flows,, then become the high resistance state that only has little tunnel current to flow if antiparallel.Promptly in paired TMR element 1a and TMR element 1b one must be low resistance, another becomes high resistance, just can canned data.In addition, writing

bit line

5a, 5b in opposite direction and write under the situation that word line 6 flows at write current, perhaps only under any one situation about flowing, the direction of magnetization of each the

second magnetosphere

8a, 8b is nonreversible, just can not carry out the rewriting of data for write current.

In a word, according to the storage unit 1 in the magnetic store of the present embodiment that forms said structure, unidirectional electric current flows among both writing

bit line

5a, 5b and write word line 6, thereby the inside at

yoke

4a, 4b is same direction by the current field that writes

bit line

5a, 5b generation with by the current field that writes word line 6 generations, can form the resultant magnetic field.So, compare with writing

bit line

5a, 5b and writing situation that word line 6 intersects vertically etc. with the situation that

yoke

4a, 4b are not set, can obtain bigger magnetic flux density, therefore can more effectively utilize current field, the required electric current of magnetization of the counter-rotating

second magnetosphere

8a, 8b is reduced again.

In addition, in the magnetic store of present embodiment, make a pair of open end K4a respectively with a pair of end face K20a subtend, make a pair of open end K4b (K41, K42) respectively with a pair of end face K20b subtend, therefore electric current flows among both writing bit line 5a, 5b and write word line 6, thereby form not busy magnetic circuit, configuration duplexer S20a, S20b in this closed magnetic circuit by the inside of yoke 4a, 4b.Therefore, can more effectively carry out the yoke 4a of TMR element 1a, 1b, the magnetization inversion among the 4b, simultaneously for be made as storage unit 1 adjacent memory unit that writes object, can reduce magnetic influence.In addition, the shielding effect that can utilize yoke 4a, 4b to produce makes the storage unit interval each other of disposed adjacent on the substrate become narrower, and this highly integrated, densification for magnetic store is favourable.Particularly, dispose the second magnetosphere 8a with a pair of subtend yoke 411,412 with one deck ground, and dispose the second magnetosphere 8b with one deck ground with a pair of subtend yoke 413,414, therefore the magnetic flux density in the backflow magnetic field by the second magnetosphere 8a, 8b further improves, and can more effectively carry out the magnetization inversion of the second magnetosphere 8a, 8b.

Below with reference to 1, Fig. 9, Figure 11 (A) and Figure 11 (B), the action of reading in the magnetic store of present embodiment is described.

At first,, from many position decoding lines 71, select 1, control signal is sent to corresponding Y direction sense amplifier circuit 56B by the Y direction address decoder circuit 56A in the first Drive and Control Circuit portion 56.As a result, read current flows into

readout bit line

33a, 33b, applies positive current potential on duplexer S20a, S20b one side in TMR element 1a, 1b.Similarly, by directions X address decoder circuit 58A in the second Drive and Control Circuit portion 58, select 1 from many transliteration sign indicating number lines 72, the sense switch 83 of correspondence position is driven.Selected sense switch 83 becomes "on" position, and read current flows into corresponding sense word line 32, is applied in negative current potential on a side opposite with duplexer S20a, S20b.So,, can flow through and read required read current for 1 storage unit 1 choosing by Y direction address decoder circuit 56A and directions X address decoder circuit 58A.Based on this read current, can detect the direction of magnetization of a pair of

second magnetosphere

8a, 8b, read stored information.

Figure 11 (A), Figure 11 (B) represent the outer part of storage unit 1 with circuit figure.Represent separately the first magnetosphere 2a of duplexer S20a, S20b, the direction of magnetization of 2b respectively with white arrow, represent the direction of magnetization of the

second magnetosphere

8a, 8b with black arrow.The direction of magnetization of the

first magnetosphere

2a, 2b all be fixed on left to.The first magnetosphere 2a is parallel direction of magnetization with the first magnetosphere 2b on duplexer S20a in Figure 11 (A), and the first magnetosphere 2b and the second magnetosphere 2b are antiparallel direction of magnetization on duplexer S20b.In this case, duplexer S20a is a low resistance state, and duplexer S20b is a high resistance state, for example corresponding to " 0 ".And Figure 11 (B) is opposite with the situation of Figure 11 (A), and duplexer S20a is a high resistance state, and duplexer S20b is a low resistance state, for example corresponding to " 1 ".The difference of the current value that flows through therein respectively by the resistance value size detection of utilizing duplexer S20a and duplexer S20b can be carried out obtaining of this diadic information.

The following describes the manufacture method of the magnetic store of present embodiment with said structure.

The manufacture method of the magnetic store of present embodiment comprises following operation: (1) forms a pair of duplexer S20a, S20b on the substrate 31 that pair of

diodes

75a, 75b are set duplexer forms operation; (2) respectively across a pair of duplexer S20a, S20b and subtend ground forms the bottom yoke of bottom yoke 4B and forms operation; (3) L1 is adjacent to each other in conplane first layering that comprises the lamination surface that is parallel to duplexer S20a, S20b arranges by sense word line 32 (teat 32T) and dielectric film 7A, and the writing line that forms a pair of first layered portion 6F simultaneously and write

bit line

5a, 5b on the yoke 4B of bottom forms operation; And (4) surround and a pair ofly write word line 6B and write

bit line

5a, 5b, the a pair of first layered portion 6F and write

bit line

5a, 5b around dielectric film 7B is mediated, top yoke 4U is set, thereby forms along the yoke formation operation configuration of loopback direction and that have a part of pair of

magnetic yoke

4a, 4b mutually with bottom yoke 4B.Following with reference to accompanying drawing, describe in detail.

Below with reference to Figure 12～Figure 19, mainly specify the manufacture method of storage unit 1 in the magnetic store.In addition, Figure 12～Figure 19 is along the sectional view of the direction of arrow of cutting line α '-α shown in Figure 3, represents its manufacture process in order.In addition, in Figure 12～Figure 19, only illustrate TMR1a in the storage unit 1, and not shown TMR1b, TMR1a and TMR1b form simultaneously in this manufacture method.

In forming operation, the bottom yoke on substrate 31, makes respectively across duplexer S20a, S20b and subtend forms bottom yoke 4B (being the part of subtend yoke 41a, 41b and pillar yoke 421～423).Here, as shown in figure 12, at first prepare on the substrate 31 of having buried

diode

75a, 75b underground, to have formed the substrate that covers duplexer S20a, S20b and dielectric film 17A on every side thereof.In addition, in the later Figure 13～Figure 19 of the Figure 12 that continues, omit the detailed icon of substrate 31.As shown in figure 13; form photoresist pattern 30A more selectively; utilize it as mask then; by reactive ion etching methods such as (RIE); the downward dielectric film 17A in etching non-protection area territory is till becoming at least the degree of depth corresponding with the thickness of the second magnetosphere 8a, the 8b of duplexer S20a, S20b.Then,,, form across duplexer S20a, S20b and the bottom yoke 4B of subtend for example by methods such as sputters in order to imbed the zone of etching dielectric film 17A downwards, up to height with identical above duplexer S20a, the S20b till.

Then form in the operation, make to write bit line 5a, 5b and first layered portion 6F L1 in first layering is adjacent to each other, arrange and form at writing line.Here, as shown in figure 14, at first remove photoresist pattern 30A,, form sense word line 32 (teat 32T) selectively then in order to be connected with the top of duplexer S20a, S20b.Then, on whole, form dielectric film 7A and plating counterdie 56S successively.Specifically, for example adopt the CVD device, form by aluminium oxide (Al ₂O ₃) wait the dielectric film 7A of composition, then,, form the plating counterdie 56S that forms by the copper good materials of electric conductivity such as (Cu) for example by methods such as sputters.Again as shown in figure 15, on plating counterdie 56S, form photoresist pattern 30B selectively.Here, do not cover form write bit line 5a, 5b and the first layered portion 6F form photoresist pattern 30B regionally.Then,, handle as the plating of electrode, form simultaneously and write bit line 5a, 5b and the first layered portion 6F by utilizing with plating counterdie 56S by in the plating groove, flooding.As shown in figure 16, after carrying out the plating processing, remove photoresist pattern 30B, remove the plating counterdie 56S that exposes by methods such as grindings again.This Thinfilm pattern formation method is commonly referred to as structural formula plating (frame plating) method.

Form the formation top yoke 4U (i.e. an araeosystyle yoke 42 and the second beam type yoke 43) and the second layered portion 6S in the operation in ensuing yoke.At first as shown in figure 17, for example on whole, form by Al by methods such as sputters ₂O ₃Dielectric film 7B Deng forming then, forms photoresist pattern 30C selectively on dielectric film 7B.Specifically, in the zone that forms bottom yoke 4B, not cover the both sides that has formed the zone that writes bit line 5a, 5b and the first layered portion 6F and not form the mode that does not cover in the zone of bottom yoke 4B corresponding to the part of the first layered portion 6F, form photoresist pattern 30C.Pattern 30C by reactive ion etching methods such as (RIE), removes dielectric film 7A, the 7B in non-protection area territory as mask with photoresist then.Thus, as shown in figure 18, form reach through hole 7H1,7H2, the zone that bottom yoke 4B exposes appears in the both sides that writes bit line 5a, 5b and the first layered portion 6F being covered by dielectric film 7B, occurs the zone that the part of the first layered portion 6F is exposed simultaneously.Then, as shown in figure 19, have the photoresist pattern 30D of designated shape, utilize its to handle, thereby can in second layering, form the top yoke 4U and the second layered portion 6S simultaneously by L2 as the plating of frame (frame) by formation.By above process, finish yoke 4 respectively and write the making of word line 6, finish storage unit 1.After finishing storage unit 1, in order to be connected with top yoke 4U on electric, formation has the sense word line 32 of requirement width.

Then, write word line extraction electrode 46 in each two ends formation that writes word line 6, write bit line extraction electrode 47 in each two ends formation that writes bit line 5, each two ends in sense word line 32 form sense word line extraction electrode 48, in addition, form readout bit line extraction electrode 49 at each two ends of readout bit line 33.

By above operation, the making that comprises the storage unit groups 54 of storage unit 1 is finished for the time being.

In addition, through forming monox (SiO by sputter equipment and CVD device etc. ₂) or aluminium oxide (Al ₂O ₃) operation that waits the operation of protective seam and grind this diaphragm, each extraction electrode 46～49 is exposed, finish the manufacturing of magnetic store.

As mentioned above, manufacture method according to the magnetic store of present embodiment, write the operation that bit

line

5a, 5b and the first layered portion 6F form simultaneously owing to comprise, therefore compare, can form storage unit 1 with operation still less with writing the situation that the bit line 5b and the first layered portion 6F form separately.Especially, be included in zone beyond the zone that

yoke

4a, 4b surrounded with the operation that top yoke 4U forms the second layered portion 6S simultaneously, therefore can make manufacturing process simpler because yoke forms operation.

More than by enumerating embodiment, describe the present invention, but the present invention is not limited to the foregoing description, various distortion all are possible.For example, about the structure of duplexer, the duplexer S20a shown in Figure 5 that is not limited to illustrate in the foregoing description, the structure of S20b.For example duplexer S21a, the S21b of storage unit 121 (variation 1) that also can be as shown in figure 20 are such, also can be to comprise the first

free layer

181a, 181b and coercive force greater than its second free layer 182a, the double-decker of 182b as the second magnetosphere 8a, the 8b of sense magnetosphere.In addition, also can with duplexer S20a, S20b or duplexer S21a, S21b in the opposite side of the

first magnetosphere

2a, 2b with

tunnel barrier layer

3a, 3b on anti-strong magnetosphere (not shown) is set, make the magnetization of the

first magnetosphere

2a, 2b stable.In addition, duplexer is not limited to constitute electric current is flowed along the direction vertical with duplexer, also can constitute electric current is flowed in the direction along lamination surface.

In addition, also can be as storage unit 122 in the magnetic store of variation shown in Figure 21 2, the sense magnetosphere of a part of double as duplexer of teat 32T in the sense word line 32 and constituting.That is to say that in TMR element 122a, 122b, the part 183 of formation teat 32T, 183b are also as the sense magnetosphere among duplexer S22a, the S22b.Therefore, the second magnetosphere 8a, the 8b that are provided with on TMR element 1a, the 1b in the above-described embodiments can be saved, texture ratio storage unit 1 simpler storage unit 122 can be made.Consider electric conductivity and soft magnetic characteristic in variation 2, for example preferably adopting, NiFe (permalloy) constitutes teat 32T.

In addition, the magnetic cell with a pair of magneto-resistance effect element has been described in the above-described embodiments, but has been not limited to this.For example, also can adopt the TMR element of simple substance to use as TMR element 123 in the magnetic store of variation shown in Figure 22 3 as magnetic memory element with 1

yoke

4 and 1 duplexer S20.

Claims

1. magneto-resistance effect element is characterized in that:

Be provided with along on a part of zone of the bearing of trend of lead for surround described lead along the configuration of loopback direction ring-type, have across the gap that on the part of described loopback direction, the is provided with yoke of a pair of open end of subtend mutually, and

Comprise the duplexer sense magnetosphere, that have a pair of end face that its direction of magnetization changes because of the external magnetic field;

Described duplexer is configured in the described gap, and what make each end face of described a pair of end face and described a pair of open end respectively holds mutual subtend.

2. magneto-resistance effect element as claimed in claim 1 is characterized in that:

Between each end of each end face of described a pair of end face and described a pair of open end, be provided with insulation course.

3. as claim 1 or the described magneto-resistance effect element of claim 2, it is characterized in that:

Area perpendicular to the cross section of described loopback direction in the described yoke is minimum at described a pair of open end place.

4. as claim 1 each described magneto-resistance effect element to the claim 3, it is characterized in that described yoke comprises as the lower part to constitute:

Extend in direction of each end that leaves described a pair of open end respectively, across described gap and the mutual a pair of subtend yoke of subtend,

Connect with an end of the opposite side of the described open end of described a pair of subtend yoke respectively, the subtend and the araeosystyle yoke of extending mutually along the stacked direction of described duplexer, and

With each an end beam type yoke connected to one another described araeosystyle yoke and the opposite side of described a pair of subtend yoke.

5. magneto-resistance effect element as claimed in claim 4 is characterized in that:

Described sense magnetosphere and described a pair of subtend yoke are located at same one deck.

6. magnetic cell is characterized in that:

It is the magnetic cell that is provided with a pair of magneto-resistance effect element;

Each of described a pair of magneto-resistance effect element comprises,

Along on a part of zone of lead bearing of trend for surround described lead along loopback direction ring-type configuration, have across the gap that on the part of described loopback direction, the is provided with yoke of a pair of open end of subtend mutually, and

Comprise sense magnetosphere that its direction of magnetization changes with the external magnetic field and duplexer with a pair of end face;

7. magnetic cell as claimed in claim 6 is characterized in that:

8. as claim 6 or the described magnetic cell of claim 7, it is characterized in that:

9. as claim 6 each described magnetic cell to the claim 8, it is characterized in that:

A pair of described yoke has respectively,

With each an end beam type yoke connected to one another described araeosystyle yoke and the opposite side of described a pair of subtend yoke;

Described a pair of magneto-resistance effect element has in the described araeosystyle yoke at least mutually.

10. magnetic cell as claimed in claim 9 is characterized in that:

11. a magnetic memory device is characterized in that:

Be provided with first writing line,

Intersect with described first writing line and extend, corresponding to second writing line parallel with described first writing line with the part of the intersection region of described first writing line, and

The magnetic cell that comprises a pair of magneto-resistance effect element and constitute;

Each of described a pair of magneto-resistance effect element contains;

Along on a part of zone of described first and second writing line bearing of trend for surround described first and second writing line along loopback direction ring-type configuration, have across the gap that on described partial loopback direction, the is provided with yoke of a pair of open end of subtend mutually, and

1 2. magnetic memory devices as claimed in claim 11 is characterized in that:

13., it is characterized in that as claim 11 or the described magnetic memory device of claim 12:

14., it is characterized in that as claim 11 each described magnetic memory device to the claim 13:

Described pair of magnetic yoke comprises respectively,

On direction of each end that leaves described a pair of open end, extend respectively, across described gap and the mutual a pair of subtend yoke of subtend,

15. magnetic memory device as claimed in claim 14 is characterized in that:

16., it is characterized in that as claim 11 each described magnetic memory device to the claim 15:

In the zone that surrounds by described yoke, also be provided with the sense wire that is connected with described duplexer on electric at described first and second writing line.