CN1534800A - Orgain semiconductor electroluminous triode and its manufacturing method - Google Patents
Orgain semiconductor electroluminous triode and its manufacturing method Download PDFInfo
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- CN1534800A CN1534800A CNA031081681A CN03108168A CN1534800A CN 1534800 A CN1534800 A CN 1534800A CN A031081681 A CNA031081681 A CN A031081681A CN 03108168 A CN03108168 A CN 03108168A CN 1534800 A CN1534800 A CN 1534800A
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- semiconducting materials
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Abstract
An electroluminescent organic semiconductor transistor is made of organic semiconductor and metal material through vacuum evaporation. It is composed of organic electrostatic induction transistor and organic electroluminescent device. Said organic electrostatic induction transistor consists of a transparent electrode layer used as source or drain, a schokttky-type gate layer and a metal layer used as drain or source. Its advantages are low drive voltage, fine control of light intensity, and high speed and stability.
Description
Affiliated technical field
The present invention relates to a kind of full organic electroluminescence device that is composited by organic static induction transistor and organic electroluminescence device.
Background technology
With silicon be the inorganic semiconductor electronic component of representative microfabrication is to sub-micron, deep-submicron, the technical level of its chip can reach the limit that integrated level has trended towards Physical Processing; The organic electronic components and parts have large tracts of land, low cost, abundant advantages such as material selectivity, the history of the existing many decades of its developmental research.The organic thin film triode of developed country's researchs such as U.S., day, Europe is to adopt organic semiconductor fet structure at present, but it is because organic semi-conductor carrier concentration and mobility are very little, cause that its operating characteristic such as switching speed are low, driving voltage is high and be difficult to practicability, still difficult as practical electronic device.In opto-electronic device and field of flat panel displays, the electroluminescent device that extensively adopts is made by semi-conducting material at present, and inorganic semiconductor material luminous efficiency height is difficult to make large-area display but have, shortcomings such as manufacturing process complexity.It is very necessary developing a kind of new organic semiconductor electroluminescence triode that organic static induction transistor and organic electroluminescence device are composited at the existing in prior technology problem.
Summary of the invention
Inventing in view of above-mentioned existing in prior technology problem is for a kind of organic semiconductor electroluminescence triode that is composited by organic static induction transistor and organic electroluminescence device is provided, realize characteristics such as low driving voltage, luminous intensity can meticulously be controlled, high speed motion, had good stable electronics, optical characteristics.
Organic semiconductor electroluminescence triode of the present invention, its structure is to be made up of organic static induction transistor and organic electroluminescence device; The vertical shape structure that Schottky type grid layer, the metal electrode layer that organic static induction transistor is formed by transparent electrode layer, two layers of organic semiconducting materials folder metal gates formed, two layers of organic semiconducting materials are as the charge carrier transport layer; In transparent electrode layer and the metal electrode layer, one is the source electrode, another is a drain electrode, and the luminescent layer of being made by luminous organic material is added between one of them electrode layer and the Schottky type grid layer, has formed the electroluminescence triode display device of the full organic semiconducting materials of stacked structure.The method for making of a kind of organic semiconductor electroluminescence triode of the present invention is characterized in that adopting vacuum vapor deposition method to make, and at first the luminous organic material evaporation is produced on the transparency electrode on the glass substrate, makes luminous material layer; Then the evaporation of ground floor organic semiconducting materials is produced on the luminous organic material evaporating film; On the organic semiconducting materials evaporating film, make metal gates; Second layer organic semiconducting materials is made in evaporation on metal gates, forms the Schottky type grid layer of two layers of organic semiconducting materials folder metal gates; Make the evaporation of metal membrane electrode at last, i.e. metal electrode layer.During making, substrate temperature is a room temperature, and vacuum degree is 10
-6～10
-5Torr.
The present invention is compound with organic static induction transistor and organic electroluminescence device, forms full organic electroluminescence device.Luminous intensity by organic static induction transistor driving and control organic electroluminescence device realizes the meticulous control of organic electroluminescence device luminous intensity.Adopt vacuum vapor deposition method can finish the making of element.The electrostatic induction triode of vertical shape structure since between source electrode and drain electrode, grid and source, drain electrode apart from very short, and make its operating characteristics have high speed, powerful advantage; And the comparing of organic electroluminescence device with the inorganic electroluminescent material, organic electroluminescence device preparation technology mode is various, the cost of material is low, can be made into polychrome and full-color display spare, be suitable for large tracts of land etc., have the incomparable superiority of inorganic material, particularly the organic light-emitting device driving voltage is low, can be complementary with integrated circuit, in addition, and even the organic luminescent device flexibility good, can be processed into the difformity device that can curl.Organic semiconductor electroluminescence triode of the present invention has following advantage: 1, low driving voltage, high luminous intensity; 2, high speed motion; 3, have good stable electronics, optical characteristics; 4, the composite characteristic that has organic static induction transistor and two kinds of devices of organic electroluminescence device.
Description of drawings
The present invention has two accompanying drawings, wherein:
Fig. 1: organic semiconductor electroluminescence triode sectional structure schematic diagram
Fig. 2: the organic semiconductor electroluminescence triode sectional structure schematic diagram in the embodiment of the invention
Fig. 3: the pectination grid in the embodiment of the invention is made schematic diagram
Wherein: 1, transparent electrode layer 2, metal electrode layer 3, luminous material layer 4, two layers of organic semiconducting materials 5, metal gates 6, glass substrate 7, gold evaporation film 8, phthalein cyanogen copper (CuPc) evaporating film 9, aluminum evaporation film 10, quinoline aluminum evaporating film 11, aluminum evaporation source 12, sample substrate 13, mask plate L
1, evaporation source and mask plate distance L
2, mask plate and sample substrate distance D
1(D
2), aluminum evaporation membrane portions D
3, do not have a zone of aluminium
Embodiment
The embodiment of organic semiconductor electroluminescence triode of the present invention and method for making thereof such as accompanying drawing 2, shown in the accompanying drawing 3, its structure is composited by conductivity gate organic static induction transistor and organic electroluminescence device: the conductivity gate organic static induction transistor is the sandwich structure of two layers of semi-conducting material phthalein cyanogen copper (CuPc) evaporating film, 8 therebetween aluminium gate, grid is a pectination aluminum evaporation film 9, the gold evaporation film 7 that source electrode contacts with one of drain electrode 8 one-tenth ohmic properties of employing and phthalein cyanogen copper evaporating film, another is a transparency electrode 1, and luminous organic material is quinoline aluminum (Alq
3).The luminous material layer of being made by the luminous organic material quinoline aluminum is added between electrode layer and the Schottky type grid layer, form the full organic electroluminescence device of stacked structure, driven and controlled the luminous intensity of organic electroluminescence device by organic static induction transistor.Organic semiconductor electroluminescence triode of the present invention adopts vacuum vapor deposition method to make, production process is as follows: the luminous organic material quinoline aluminum that 1, thickness is about 100nm evaporates on the transparency electrode 1 that is produced on the glass substrate, makes quinoline aluminum evaporating film 10; 2, the phthalein cyanogen copper evaporation that ground floor thickness is about 200nm is produced on the quinoline aluminum evaporating film 10; 3, place pectination moulding mask plate 13 in aluminum evaporation source 11 and 12 of sample substrates, on phthalein cyanogen copper film, make the pectination aluminium gate; 4, the second layer phthalein cyanogen copper that evaporation is made on grid, thickness is about 200nm; 5, make gold evaporation membrane electrode 7 at last.The making time substrate temperature is a room temperature, and vacuum degree is 10
-6～10
-5Torr, the evaporating temperature of phthalein cyanogen copper is 420 ℃, evaporation rate is 2nm/min.
Manufacturing of organic static induction transistor, suitable pectination aluminium gate structure control is extremely important, because the phthalein cyanogen copper film of thicker aluminum evaporation membrane portions and both sides forms Schottky barrier, stops electric current to flow to drain electrode from source electrode.In other words, the operating current of organic static induction transistor can not be effectively controlled in this two parts zone of pectination grid.And its operating current is flow through by the zone that does not have aluminium.In the pectination aluminium gate structure, the aluminum evaporation membrane portions D among Fig. 3
1, D
2With the region D that does not have aluminium
3The each several part width is regulated the distance L apart from d, evaporation source 11 and mask plate 13 in two aluminum evaporation sources 11 among the figure by design
1, the distance L of mask plate 13 and sample substrate 12
2Control.In the present embodiment, the thickness of aluminium film is 50～500nm, is divided into continuous part and discontinuous part.
Claims (2)
1, a kind of organic semiconductor electroluminescence triode is characterized in that being made up of organic static induction transistor and organic electroluminescence device; The Schottky type grid layer that organic static induction transistor is formed by transparent electrode layer (1), two layers of organic semiconducting materials (4) folder metal gates (5), the vertical shape structure that metal electrode layer (2) is formed, two layers of organic semiconducting materials (4) are as the charge carrier transport layer; In transparent electrode layer (1) and the metal electrode layer (2), one is the source electrode, another is a drain electrode, the luminous material layer of being made by luminous organic material (3) is added between one of them electrode layer and the Schottky type grid layer, has formed the electroluminescence triode display device of the full organic semiconducting materials of stacked structure.
2, a kind of method for making of organic semiconductor electroluminescence triode is characterized in that adopting vacuum vapor deposition method to make, and at first the luminous organic material evaporation is produced on the transparency electrode (1) on the glass substrate (6), makes luminous material layer (3); Then the evaporation of ground floor organic semiconducting materials is produced on the luminous organic material evaporating film; On the organic semiconducting materials evaporating film, make metal gates (5); Go up evaporation at metal gates (5) and make second layer organic semiconducting materials, form the Schottky type grid layer of two layers of organic semiconducting materials (4) folder metal gates (5); Make the evaporation of metal membrane electrode at last, i.e. metal electrode layer (2).During making, substrate temperature is a room temperature, and vacuum degree is 10
-6～10
-5Torr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031081681A CN1534800A (en) | 2003-03-28 | 2003-03-28 | Orgain semiconductor electroluminous triode and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031081681A CN1534800A (en) | 2003-03-28 | 2003-03-28 | Orgain semiconductor electroluminous triode and its manufacturing method |
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|---|---|
| CN1534800A true CN1534800A (en) | 2004-10-06 |
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| CNA031081681A Pending CN1534800A (en) | 2003-03-28 | 2003-03-28 | Orgain semiconductor electroluminous triode and its manufacturing method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100447983C (en) * | 2005-09-29 | 2008-12-31 | 卡西欧计算机株式会社 | Manufacturing method of display device |
| CN1897321B (en) * | 2005-05-30 | 2011-01-12 | 哈尔滨理工大学 | Submicron Thickness Organic Semiconductor Thin Film Transistor |
| US8182304B2 (en) | 2004-11-17 | 2012-05-22 | Samsung Mobile Display Co., Ltd. | Method of manufacturing an organic electroluminescent device having organic light-emitting transistors |
-
2003
- 2003-03-28 CN CNA031081681A patent/CN1534800A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8182304B2 (en) | 2004-11-17 | 2012-05-22 | Samsung Mobile Display Co., Ltd. | Method of manufacturing an organic electroluminescent device having organic light-emitting transistors |
| CN1897321B (en) * | 2005-05-30 | 2011-01-12 | 哈尔滨理工大学 | Submicron Thickness Organic Semiconductor Thin Film Transistor |
| CN100447983C (en) * | 2005-09-29 | 2008-12-31 | 卡西欧计算机株式会社 | Manufacturing method of display device |
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