CN1498047A - Organic electroluminescence device and its making method and organic electroluminescence display device - Google Patents
Organic electroluminescence device and its making method and organic electroluminescence display device Download PDFInfo
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- CN1498047A CN1498047A CNA200310101239XA CN200310101239A CN1498047A CN 1498047 A CN1498047 A CN 1498047A CN A200310101239X A CNA200310101239X A CN A200310101239XA CN 200310101239 A CN200310101239 A CN 200310101239A CN 1498047 A CN1498047 A CN 1498047A
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Abstract
An organic EL device of the present invention includes: a substrate; electrodes including a first electrode formed adjacently to the substrate, and a second electrode disposed to be spaced from the first electrode, a function layer formed between the electrodes and including a luminous layer, and a buffer layer including in the second electrode and disposed to be spaced from the function layer, in which occurrence of dark spots is minimized. Moreover, the present invention provides a method for manufacturing the organic EL device and an organic EL display apparatus.
Description
Technical field
The present invention relates to organic electroluminescent (below be abbreviated as " organic EL ").More specifically, the present invention relates to improve dim spot (dark spots) occurs and growth question, thereby make the OLED display that can obviously improve display quality and its life-span, and relate to the method for making organic EL device and the OLED display that adopts this organic EL device.
Background technology
Organic EL device has very fast response speed, and is selfluminous element, and therefore, when El element was used for display unit, hope can provide the good panel display apparatus with wide visual angle.In this, after deliberation after liquid crystal indicator, organic EL device is applied to panel display apparatus (flat display apparatus).
When above-mentioned organic EL device is used for panel display apparatus, similar to liquid crystal indicator, can be to its using active matrix drive method.Know, can adopt top emission structure or bottom emission structure as the ray structure in the organic EL display that adopts the driven with active matrix method.
Figure 11 (a) and 11 (b) are for schematically showing the view of traditional organic EL device.Figure 11 (a) shows top emission structure (top emission type) organic EL device, and Figure 11 (b) illustrates bottom emissive type (bottomemission type) organic EL device.In the tradition of the top emission structure shown in Figure 11 (a) organic EL device 100, under many situations, reflective (reflective) anode 104 that is formed by the material such as Ni/Al is deposited on the substrate 102, and is formed on the anode 104 by the functional layer (function layer) 106 that organic EL Material forms.This functional layer 106 is made of multiple material according to the certain material and the purpose of organic EL device.In the conventional example shown in Figure 11 (a), on anode 104, functional layer 106 comprises: carrier injection layer 108, and it comprises copper phthalocyanine etc.; Carrier blocking layers 110 such as TPD; And such as the luminescent layer (luminous layer) 112 of Alq3.In addition, the negative electrode 114 that constitutes nesa coating is deposited on the luminescent layer 112.In the conventional example shown in Figure 11 (a), negative electrode 114 is made of the material such as aluminium (Al).In addition, the thin layer 116 that is made of the material such as the little ionization energy of having of Li, K, Ca and Mg is formed between negative electrode 114 and the functional layer 106.This thin layer 116 has improved electron injection efficiency.In addition, above-mentionedly respectively to constitute constituent element (components) and not influenced by external humidification in order to protect, deposition is by such as SiO
w, SiO
xN
yAnd SiN
zThe transparent insulating film 118 made of material with covered cathode 114.So, made a structure, wherein, the reliability of organic EL device is improved.In the top emission structure organic EL device 100 shown in Figure 11 (a), the light that produces in the functional layer 106 is launched to the direction shown in the arrow A.
In addition, also known the bottom emissive type structure shown in Figure 11 (b) now.On transparent substrates 122, bottom emissive type shown in Figure 11 (b) tradition organic EL device 120 comprises: the anode 124 that is made of nesa coating; Be deposited on the functional layer 126 on the anode 124; And the reflective negative electrode 128 that is deposited on the functional layer 126 and forms by the material of for example Al.For functional layer 126, can use the material similar, and obtain a structure to the material of above-mentioned top emission structure organic EL device, wherein the light that produces in the functional layer 126 is launched to the direction shown in the arrow B.
What now known in addition, is the display quality of above-mentioned El element and the phenomenon in life-span to have occurred having a strong impact on.Particularly, be known that and dim spot in El element, occurs.Dim spot is known as the point defect (spotted defects) on the organic EL device, does not produce luminous at this point.This dim spot is growth gradually as time goes by after it occurs.Therefore, worsen, and display performance worsens along with time lapse, so the existence of dim spot becomes serious defective owing to the light-emitting area of organic EL device reduces to cause the luminescent properties of organic EL device.Be known that these dim spots form for some reason in device manufacturing processes, and as time goes by, the quantity of point does not increase, but its enlarged areas only.Especially, think that not occurring dim spot in device manufacturing processes makes the life-span can significantly improve organic EL device, and provide superior display quality for organic EL device.
Up to now, various researchs have been carried out to solve the dim spot problem.For example, Japanese patent gazette disclose for flat 10 (1998)-No. 275682, in order to solve the dim spot problem, in the growth of device external structure hermetic unit with the dim spot that prevents to cause owing to oxygen and moisture.Yet, put down 10 (1998)-No. 275682 according to Japanese patent laid-open publication gazette, directly do not prevent the appearance of dim spot.Though make dim spot not enlarge, and thereby can prevent the device lost of life, the restriction that dim spot is occurred but is not the basic goal of this public technology.
In addition, this oxygen and the moisture of preventing also disclosed in Japanese patent gazette 2000-40594 number from the trial of extraneous infiltration.In Japanese patent gazette 2000-40594 number, to preventing that by on organic EL device, forming damage film (damage preventive film) from preventing that the influence that comes from the outside from having done research.Can find out that disclosed damage prevents that film from having prevented the damage that oxygen, water or plasma cause in Japanese patent gazette 2000-40594 number, and have the effect of restriction dim spot growth.Yet Japanese patent gazette 2000-40594 disclosed method does not relate to the appearance that prevents dim spot.
In addition, in preventing the above-mentioned technology that dim spot occurs, supposed that dim spot is caused by dust in the manufacture process and the heterogeneity of deposition as the film of anode and negative electrode.These defective utilizations reduce the method for the film of dust and polishing deposition and handle.Yet, the not talkative appearance that can suppress dim spot according to traditional treatment method fully.In addition, have been noted that and to come the more appearance of constitutionally inhibition dim spot by the essential mechanism that solves the dim spot appearance.
Summary of the invention
Consider that the above-mentioned disadvantage of background technology makes the present invention.The present invention relates to a kind of organic EL device, thereby obtain life-time dilatation by means of reduce to the minimum deterioration that causes because of the appearance of dim spot and growth subsequently thereof that prevents by the appearance with dim spot, this organic EL device has obtained the long-life.In addition, the present invention relates to a kind of method of making this organic EL device, and a kind of organic EL display that comprises this organic EL device.
The present inventor has obtained the present invention by the appearance mechanism that studies dim spot in great detail.Particularly, result as lucubrate, the present inventor finds that the dust or heterogeneity in the lip-deep deposition of sedimentary deposit, the appearance of dim spot is also caused by organic layer and the small delamination on the inorganic interface layer (micro delamination) as principal element.Usually, the inorganic material such as negative electrode is deposited on the functional layer that constitutes organic EL device, to guarantee electrical conductance.Inventor's discovery is as follows.In many cases, be not fine such as the organic membrane of luminescent layer with such as the adhesiveness between the inoranic membrane of negative electrode that forms by metal or metal oxide and anode.The stress that gathers in every layer of inoranic membrane causes the delamination on the interface between organic membrane and inoranic membrane, and this causes the appearance of dim spot.In case dim spot occurs, the surface seepage that oxygen or water are opened along pull-up is so dim spot is owing to reasons such as corrosion enlarge as time goes by, so reduced the long-term reliability of organic EL device.
The invention provides the structure of above-mentioned organic EL device, its appearance with dim spot reduces to minimum, so solved latent defect relevant with dim spot in traditional organic EL device.
Particularly, the invention provides a kind of organic EL device, comprising: substrate; Electrode, second electrode that is included in first electrode that forms on the substrate and is arranged to separate with first electrode; Between electrode, form and comprise the functional layer of luminescent layer; And the resilient coating that is included in second electrode and is arranged to separate with functional layer.
In the present invention, preferably, the upper surface 20nm of the resilient coating range capability layer of formation or littler.Among the present invention, resilient coating comprises oxide.Resilient coating of the present invention can comprise aluminium oxide.Among the present invention, organic EL device can further include: be arranged near the functional layer and comprise any one layer in alkali metal and the alkali earth metal.
The invention provides a kind of method of making organic EL device, this method comprises the following steps:
On substrate, form first electrode;
On first electrode, form the functional layer that comprises luminescent layer;
On luminescent layer, form second electrode; And
On the upper surface of functional layer predetermined value or littler distance, forming resilient coating.
Among the present invention, resilient coating can comprise oxide, and the step that forms resilient coating can comprise the step of oxidation second electrode and the arbitrary steps in the step of deposition oxide thereon.Among the present invention, resilient coating can comprise aluminium oxide.Among the present invention, this manufacture method also can further comprise step: near functional layer the deposition comprise in alkali metal and the alkali earth metal any one the layer.
The invention provides a kind of organic EL display that is included in a plurality of organic EL devices that form on the substrate, wherein this organic EL device comprises: electrode, second electrode that it comprises near first electrode the substrate and is arranged to separate with first electrode; Functional layer, it is included in the luminescent layer that forms between electrode; And resilient coating, it is included in second electrode, and is arranged to separate with functional layer.
Among the present invention, can form resilient coating at the upper surface of range capability layer 20nm or littler distance.Among the present invention, resilient coating can comprise oxide.Among the present invention, resilient coating can comprise aluminium oxide.Among the present invention, organic EL display can further include: be arranged near the functional layer and comprise any one layer in alkali metal and the alkali earth metal.
Description of drawings
For a more complete understanding of the present invention and advantage, with reference now to following explanation in conjunction with the accompanying drawings, wherein:
Fig. 1 is the view that the cross-sectional structure of organic EL device of the present invention is shown, and this device has top emission structure;
Fig. 2 is the view that the cross-sectional structure of organic EL device of the present invention is shown, and this device has the bottom emission structure;
Fig. 3 (a) to 3 (c) be the view that the manufacture process of organic EL device of the present invention is shown;
Fig. 4 (a) and 4 (b) are the views that the manufacture process of organic EL device of the present invention is shown;
Fig. 5 is the vertical view of organic EL display of the present invention;
Fig. 6 is the circuit diagram that the drive circuit of organic EL display of the present invention is shown;
Fig. 7 (a) and 7 (b) are the views of the characteristics of luminescence of each pixel that organic EL display all is shown (be right after at it and make the back);
Fig. 8 (a) and 8 (b) are the views of the characteristics of luminescence of each pixel (after through 3 week) that organic EL display all is shown;
Fig. 9 (a) and 9 (b) are the views that shows the characteristics of luminescence of organic EL display of the present invention;
Figure 10 (a) and 10 (b) are the views that shows the characteristics of luminescence of traditional organic EL display; And
Figure 11 (a) and 11 (b) are the views that shows the cross-sectional structure of traditional organic EL device.
Embodiment
Though the present invention will illustrate by the embodiment shown in the accompanying drawing hereinafter, the invention is not restricted to the embodiment shown in the accompanying drawing.
Fig. 1 is the explanatory view that the structure of organic EL device of the present invention is shown.Organic EL device 10 shown in Figure 1 is configured to the top emission structure structure, and wherein, reflective anode 14 is deposited on the substrate 12 such as glass, and is used for producing luminous functional layer 16 by electroluminescence and is deposited on anode 14.Anode can be formed by conductive metallic material, and, can use for example Ni, Al, Mo, Cr, Ni/Al and any alloy thereof.In addition, as shown in Figure 1, functional layer 16 more specifically comprises carrier injection layer 16a, carrier blocking layers 16b and luminescent layer 16c.Notice that in another embodiment of the present invention, functional layer 16 can comprise other layer with other function, for example electron transfer layer etc.In addition, in the embodiment shown in fig. 1, the thin layer 18 that is made of the material such as LiF is arranged near the luminescent layer 16c.
Charge carrier produces a layer 16a for example can comprise copper phthalocyanine etc.Yet, in the present invention, except copper phthalocyanine, can use any carrier generation materials, for example such as porphyrin and derivative thereof.
In addition, as carrier blocking layers 16b available among the present invention, TPD can be used in the specific embodiment of the present invention.Yet except TPD, known up to now any carrier transport material and any derivative thereof all can use.Such carrier transport material available among the present invention will illustrate hereinafter.
(Chemical formula 1)
(Chemical formula 2)
(chemical formula 3)
(chemical formula 4)
(chemical formula 5)
In addition,, can use for example known up to now any low molecule or high-molecular luminous material as the luminescent layer 16c that can be used among the present invention, and for example such as the complex compound of Alq3.Such luminescent material that can be used for the present invention is with explanation by way of example hereinafter.As so low mulecular luminescence material, can list following compound.
(chemical formula 6)
(chemical formula 7)
(chemical formula 8)
(chemical formula 9)
In addition, as such high-molecular luminous material, can list following compound.
(Chemical formula 1 0)
(Chemical formula 1 1)
(Chemical formula 1 2)
(Chemical formula 1 3)
About above-mentioned material, under many situations, low molecular material is used for its function and is divided into the structure that multilayer and this multilayer stack together, and adopts wherein macromolecular material as the structure of simple layer.Yet, among the present invention, various dopants can be added in this material, and above-mentioned luminescent material also can mix use mutually according to its luminous efficiency.
Various dopants can add in the above-mentioned functions layer, to control its characteristics of luminescence.As the dopant that can be used among the present invention, available any dopant is as long as can obtain the necessary characteristics of luminescence.For example, dopant can be selected from daylight type fluorescent material, fluorescent whitening agent, laser dye, organic scintillator, be used for the dyestuff of fluorescence analysis reagent etc.
More specifically, as above-mentioned dyestuff, the dyestuff shown in following can be arranged: Nile blue (Nile Blue), Nile red (Nile Red), TPB, coumarin 6, ketone group cumarin, rubrene, DCM-1 (orange red), perylene (perylene), p-terphenyl, polyphenyl 1 (polyphenyl 1), talan 1, talan 3, cumarin 2, cumarin 47, cumarin 102, cumarin 30, rhodamine 6G, rhodamine B, rhodamine 700, styryl 9 (styryl 9), HITCL, IR140 etc.Yet, in the present invention, also can use any dyestuff except above-mentioned dyestuff, as long as it can give suitable luminescent spectrum.
In addition, in the present invention, as required, electron transfer layer also is applicable to negative electrode.For being applicable to electronic shell of the present invention, can list following exemplary materials.
(Chemical formula 1 4)
(Chemical formula 1 5)
(Chemical formula 1 6)
(Chemical formula 1 7)
Can list the Zhe Yang De oxadiazole compound of above-mentioned chemical formula representative or Yi Zhi De oxadiazole derivative up to now.
Among the present invention in the specific embodiment used thin layer 18 can form with the optical clear with little ionization energy (optically transparent) material.For example, available bases metallic element or alkali earth metal, alkali metal comprise Li, K etc., and alkali earth metal comprises Ca, Mg etc.In certain embodiments of the invention, thin layer 18 can be formed by the fluoride such as LiF.Because above-mentioned thin layer 18 has improved electron injection efficiency, so thin layer 18 is specially adapted to form the situation of Al negative electrode 20.
Among the present invention, negative electrode 20 is formed on the thin layer 18, and is configured to provide electronics to functional layer 16.In certain embodiments of the invention, negative electrode 20 can be formed by Al.As material as negative electrode 20 in the type structure of bottom, though preferably reflective material, available in essence any electric conducting material.For example, available Al, Ca, Sr, LiAl, Ni, Ni/Al, Cr, Ag, MgAg etc.In addition, in another embodiment of the present invention, the organic conductive film that comprises alkali metal or alkali earth metal can be used as negative electrode.In this case, can be used as auxiliary conductive layer by metal conducting film such as Al, ITO, Ag, Ni and Cr.In addition, among the present invention, resilient coating 22 is formed near the negative electrode 20.This resilient coating 22 has reduced from diaphragm described hereinafter and has been applied to stress on the organic and inorganic interface.So, prevented on organic substance shown in Figure 1-inorganic matter interface the especially appearance of delamination on the Al/ functional layer interface in the embodiment of the invention.Note, be as thin as about 0.5nm because comprise the thin layer 18 of Li, so organic substance among the present invention-inorganic matter interface mainly refers to Al/ functional layer interface.
In a preferred embodiment of the invention, above-mentioned resilient coating 22 can constitute density than the density of luminescent layer 16c or the low density film of negative electrode 20.Among the present invention, the density of layer can be by for example determining by the image density (image density) on the cross-sectional structure of scanning electron microscopy acquisition.In the specific embodiment of the present invention, above-mentioned resilient coating 22 can comprise oxide.Especially Al is being used as in the situation of negative electrode 20, preferably, is using Al as aluminium oxide.Among the present invention, preferably, resilient coating 22 is fully soft, and has the density littler than cathode material, causes and can cushion the stress that applies from diaphragm fully.Consider the electronics injection efficiency, the thickness of the resilient coating 22 that uses among the present invention need be arranged to 50nm or littler.In order to ensure enough carrier transport performances, preferably, this thickness is set to 20nm or littler, more preferably, is arranged between the 0.5nm to 10nm.In addition, in the present invention, add the thickness that together obtains by thickness and can be set to 20nm or littler negative electrode 20 and resilient coating 22.
Especially, among the present invention, (upper surface of the luminescent layer 16c of embodiment for example shown in Figure 1) preferably is set to about 20nm or littler to the distance of resilient coating 22 from the functional layer upper surface.Among the present invention, for example, when unshowned electron transfer layer was formed on luminescent layer 16c upward with formation functional layer 16, the upper surface of functional layer 16 overlapped with the upper surface of electron transfer layer.Be used to protect the diaphragm 24 of avoiding extraneous water and oxygen influence such as the building block of functional layer 16 and negative electrode to be formed on resilient coating 22.Diaphragm 24 can be by such as SiO
w, Si
xO
yAnd SiN
zMaterial form, with optical clear fully, and give sufficient protective value to it.
Fig. 2 shows another embodiment of organic EL device of the present invention.Organic EL device 30 shown in Fig. 2 is configured to bottom emissive type.Except the structure of anode 32 and negative electrode 34, bottom emissive type organic EL device shown in Figure 2 is configured to roughly similar to organic EL device shown in Figure 1 10.When reference Fig. 2 described the organic EL device 30 of another embodiment of the present invention, anode 32 was deposited on the substrate 36, and by such as ITO, IZO and SnO
2Transparent conductive material form so that bottom emission becomes possibility.
In addition, the negative electrode 34 of organic EL device shown in Figure 2 is formed by reflective Al.Negative electrode 34 forms cathode layer 34a and 34b by the depositing operation that was divided into for two steps.On cathode layer 34a, resilient coating 22 forms with the structure with the described structural similarity of reference Fig. 1.In addition, and between negative electrode 34 and anode 32, forms, so the formation organic EL device with reference to those similar functional layers 16 and the thin layer 18 described in the first embodiment of the invention of Fig. 1 explanation.Notice that though do not form protective layer in the embodiment shown in Figure 2, protective layer can be similarly constructed with embodiment shown in Figure 1, so can improve reliability.
Fig. 3 (a) is the view that the structure of each step is shown to 4 (b), and the method that organic EL device of the present invention is made in this structure utilization forms.Fig. 3 (a) is the embodiment that makes the organic EL device 10 with top emission structure shown in Figure 1 to the manufacture method embodiment shown in 4 (b).Yet only by changing the material of substrate, anode and negative electrode, Fig. 3 (a) also can be applicable to organic EL device shown in Figure 2 30 to the manufacture method shown in 4 (b).
With reference to accompanying drawing manufacture method of the present invention is described from Fig. 3 (a) beginning.At first, shown in Fig. 3 (a), be deposited on the substrate such as glass, quartz, vitreous silica and silicon (monocrystalline, polycrystalline) such as the reflectorized material of for example Ni or Ni/Al, composition is to form anode 14 then.Then, shown in Fig. 3 (b), deposition is such as polymer and SiO
xInsulating material, to limit conductive component adjacent one another are and pixel.Then, the composition insulating material is so form insulation system 28.As Fig. 3 (c) shown in, comprise charge carrier produce the functional layer 16 of layer, carrier blocking layers and luminescent layer method by for example sputter (sputtering) and evaporation (evaporation), by suitable mask deposit thereafter.
In addition, in manufacture method of the present invention, shown in Fig. 4 (a), comprise that for example thin layer 18 and the negative electrode 20 of LiF utilize the method such as sputter and evaporation to deposit.Thereafter, shown in Fig. 4 (b), resilient coating 22 forms on the surface of negative electrode 20.In certain embodiments of the invention, can adopt such method to form resilient coating 22 and make oxygen, air etc. be introduced in the manufacturing equipment, organic EL device is in statu quo placed predetermined amount of time in predetermined temperature, and negative electrode 20 is surperficial oxidized.In addition, in another embodiment of manufacture method of the present invention, for example, can utilize the metal oxide of deposition such as aluminium oxide such as CVD method, the resilient coating 22 that has suitable density with preparation.In this case, can regulate deposition rate, to obtain suitable density.Among the present invention, prepare in the situation of resilient coating 22 at the surface oxidation that utilizes negative electrode, resilient coating 22 can be by forming with negative electrode 20 self aligned modes, and do not need to use especially the material such as mask.Therefore, manufacturing cost can reduce, and manufacture process can be simplified.
Thereafter, will be by the CVD method such as SiO
w, SiO
xN
yAnd SiN
zMaterial be deposited on the resilient coating 22, form protective layer 24.So, form top emission structure organic EL device as shown in Figure 1.In addition, before forming protective layer 24, can be formed for carrying out the unshowned conductive component of necessary connection.Notice that bottom emissive type organic EL device of the present invention shown in Figure 2 can form by replacing protective layer 24 at the material of Fig. 3 (a) change anode and negative electrode to the manufacture method shown in 4 (b) and deposition cathode material.In addition, among the present invention, also can adopt a kind of structure, wherein from functional layer, anode is arranged to lower electrode, and negative electrode is arranged to upper electrode.Alternatively be, also can adopt another kind of structure, wherein from functional layer, anode is arranged to upper electrode, and negative electrode is arranged to lower electrode.
Fig. 5 is the vertical view that shows the structure of organic EL display 40, and wherein, organic EL device of the present invention is arranged to active matrix.As shown in Figure 5, organic EL display 40 of the present invention is configured to active active matrix and arranges, and wherein, each pixel 42 is arranged to matrix on substrate.In a preferred embodiment of the invention, thin-film transistor (below be called TFT) 44 links to each other with each pixel 42, so can carry out switch drive (switching drive) to each pixel.The functional layer that its shape of cross section is illustrated schematically among Fig. 1 and 2 is deposited on each pixel 42, so constitute organic EL device.Carry out the required unshowned conductive component of driven with active matrix and form between pixel 42, so obtain a kind of structure, wherein, organic EL display of the present invention can drive based on the control signal from external world's input.
Fig. 6 illustrates an example of the drive circuit that can be used for organic EL device of the present invention.Among Fig. 6, organic EL device is shown as the diode by Reference numeral 50 expressions.In the embodiment of drive circuit shown in Figure 6, the drive circuit that drives organic EL device can comprise the switching TFT 54 that is used to carry out switch drive, be driven and be used for to the driver TFT 52 of organic EL device 50 supplying electric currents and be used for the stable capacitor 58 that is supplied to the electric current of organic EL device 50 by switching TFT 54.
Holding wire 56 is connected to switching TFT 54.Receive drive signal by holding wire 56, with driving switch TFT 54, it is the grid potential of Control Driver TFT 52 then.So driver TFT 52 is actuated to switch between Kai Heguan.The electric current that is supplied to organic EL device 50 is controlled according to the on/off operation of driver TFT52, so obtain the luminous of the functional layer used among as shown by arrow C the present invention.Among the present invention, the foregoing circuit that drives organic EL device is not limited to circuit shown in Figure 6, and known up to now any circuit all can use.
Fig. 7 (a) and 7 (b) are views, and it will adopt the characteristics of luminescence of a pixel of organic EL display of the present invention of the organic EL device (this organic EL device is shown among Fig. 2) of bottom emission structure to compare with the characteristics of luminescence of just making good traditional organic EL display shown in Figure 11.To the organic EL display device shown in 9 (b), Al is as negative electrode at Fig. 7 (a).Form resilient coating by this way and make negative electrode be deposited, dry air is introduced in the depositing device carrying out the air oxidation on Al surface, and aluminium oxide (Al
2O
3So) on cathode surface, form.
Thereafter, depositing Al once more, to form negative electrode, this negative electrode has the thickness of about 200nm, and comprises resilient coating wherein, so the formation organic EL device.In this case, the density utilization of resilient coating is assessed by the image density of the cross-sectional structure that scanning electron microscopy obtains, thereby definite density is lower than the density of Al layer.In addition, the resilient coating of formation has the thickness of about 2nm, is about 10nm from the distance of luminescent layer.In addition, LiF layer thickness with about 0.5nm between negative electrode and luminescent layer forms.
Fig. 7 (a) has shown the characteristics of luminescence of a pixel of organic EL display of the present invention, and Fig. 7 (b) has shown the characteristics of luminescence of traditional organic EL device.Shown in Fig. 7 (a), in organic EL display constructed in accordance, do not observe the black part that dim spot causes, and have good display quality.On the other hand, the traditional organic EL device shown in Fig. 7 (b) shows that though device is made, except not using the resilient coating that uses among the present invention, the display defect that causes because of dim spot occurs in organic EL device under identical sedimentary condition.Fig. 7 (a) is identical with creating conditions of the organic EL device shown in 7 (b).Therefore, shown by remaining stress on buffering organic substance-inorganic matter interface, rather than, can effectively reduce the appearance of dim spot by reducing the defective deposition of dust and electrode.
Fig. 8 (a) is the view that shows the display characteristic that obtains by the identical demonstration test that the pixel of organic EL device identical after about 3 week in past is carried out with 8 (b).Fig. 8 (a) has shown the display characteristic of organic EL display of the present invention, and Fig. 8 (b) has shown the display characteristic of traditional organic EL device.Shown in Fig. 8 (a), when dim spot did not occur in the manufacture process, even after time lapse, display quality still kept.Yet when dim spot having occurred in the manufacture process, the dim spot part enlarges as time goes by, shown in Fig. 8 (b).The result is to cause the decline of display quality, for example lowering of luminance, decrease of contrast and display defect., recognize to shown in the embodiment shown in 8 (b) as Fig. 7 (a), can significantly improve the reliability of the display characteristic of organic EL display according to the present invention.
Fig. 9 (a) and 9 (b) are views, and its characteristics of luminescence that organic EL display of the present invention in broader area is shown over time.Fig. 9 (a) is the view of the characteristics of luminescence after display unit has just been made, and Fig. 9 (b) has shown and makes the observed characteristics of luminescence after good about 3 week of back.Shown in Fig. 9 (a), organic EL display of the present invention has provided its contrast along higher luminous of the profile of pixel.In addition, shown in Fig. 9 (b), also be over time about the characteristics of luminescence, it shows, this generation hardly over time in organic EL display of the present invention.
On the other hand, the results are shown among Figure 10 (a) and 10 (b) the similar research of traditional organic EL display.Figure 10 (a) is the view of the characteristics of luminescence after the display unit manufacturing well just, and Figure 10 (b) is the view of the characteristics of luminescence after about 3 week after demonstration is made well.Shown in Figure 10 (a), though just make good after, in traditional organic EL display luminous, except the dark part that dim spot causes, also observe pixel periphery lowering of luminance.Though its reason infers at present, suppose that residual stress tends to discharge at the peripheral part of pixel, therefore, the delamination on organic substance-inorganic matter interface is more prone to take place at the peripheral part of pixel.In addition, in the characteristics of luminescence shown in Figure 10 (b) (wherein following the tracks of the characteristics of luminescence that changes along with the time (about 3 week)), be accompanied by the growth of dim spot, observed the decline of each pixel intensity, and further, the shape representation decline of pixel.Thereby the display characteristic that demonstrates organic EL display obviously worsens.
As mentioned above, according to the present invention, can provide organic EL device, it is minimum with dropping to of dim spot in essence, and has improved the reliability of display characteristic.In addition, according to the present invention, can provide the method for easily making organic EL device with low cost, this device can reduce the appearance of dim spot.In addition, according to the present invention, can provide organic EL display, it can provide the demonstration of good contrast for a long time, and can not cause display characteristic deterioration in time.
As above, described in detail the present invention by the embodiment shown in the accompanying drawing.Yet, the invention is not restricted to the embodiment shown in the accompanying drawing.For detail, the structure of organic EL device, structure, manufacturing process sequential scheduling, can suitably use any, as long as can obtain similar structure.
Though described the preferred embodiments of the present invention in detail, should be understood that, under the situation that does not break away from the spirit and scope that define by claims of the present invention, can do various variations, substitute and change.
Claims (14)
1. organic electroluminescence device comprises:
Substrate;
Electrode is included in first electrode that forms on the substrate, and is arranged to second electrode that separates with first electrode;
Between electrode, form and comprise the functional layer of luminescent layer; And
The resilient coating that is included in second electrode and is arranged to separate with functional layer.
2. organic electroluminescence device as claimed in claim 1, wherein, the upper surface 20nm of the resilient coating range capability layer of formation or littler.
3. organic electroluminescence device as claimed in claim 1, wherein, resilient coating comprises oxide.
4. organic electroluminescence device as claimed in claim 1, wherein, resilient coating comprises aluminium oxide.
5. organic electroluminescence device as claimed in claim 1 also comprises: be arranged near the functional layer and comprise any one layer in alkali metal and the alkali earth metal.
6. method of making organic electroluminescence device, this method comprises the following steps:
On substrate, form first electrode;
On first electrode, form the functional layer that comprises luminescent layer;
On luminescent layer, form second electrode; And
On the upper surface of functional layer predetermined value or littler distance, forming resilient coating.
7. the method for manufacturing organic electroluminescence device as claimed in claim 6, wherein, resilient coating comprises oxide, and the step that forms resilient coating comprises the step of oxidation second electrode and the arbitrary steps in the step of deposition oxide thereon.
8. the method for manufacturing organic electroluminescence device as claimed in claim 6, wherein, resilient coating comprises aluminium oxide.
9. the method for manufacturing organic electroluminescence device as claimed in claim 6 also comprises step: near functional layer the deposition comprise in alkali metal and the alkali earth metal any one the layer.
10. organic electroluminescence display device and method of manufacturing same that is included in a plurality of organic electroluminescence devices that form on the substrate, wherein this organic electroluminescence device comprises: electrode, second electrode that comprises near first electrode the substrate and be arranged to separate with first electrode; Functional layer, it forms between electrode and comprises luminescent layer; And resilient coating, it is included in second electrode and is arranged to and separates with functional layer.
11. organic electroluminescence display device and method of manufacturing same as claimed in claim 10, wherein, the upper surface 20nm of the resilient coating range capability layer of formation or littler.
12. organic electroluminescence display device and method of manufacturing same as claimed in claim 10, wherein, resilient coating comprises oxide.
13. organic electroluminescence display device and method of manufacturing same as claimed in claim 10, wherein, resilient coating comprises aluminium oxide.
14. organic electroluminescence display device and method of manufacturing same as claimed in claim 10 also comprises: be arranged between the luminescent layer and second electrode and comprise any one layer in alkali metal and the alkali earth metal.
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| CNA200310101239XA CN1498047A (en) | 2002-10-21 | 2003-10-13 | Organic electroluminescence device and its making method and organic electroluminescence display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP305626/2002 | 2002-10-21 | ||
| CNA200310101239XA CN1498047A (en) | 2002-10-21 | 2003-10-13 | Organic electroluminescence device and its making method and organic electroluminescence display device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7619358B2 (en) | 2004-08-20 | 2009-11-17 | Panasonic Corp. | Dispersion-type EL device and illuminated switch unit using the same |
| CN103165816A (en) * | 2011-12-14 | 2013-06-19 | 海洋王照明科技股份有限公司 | Inverted top emission organic light emission diode and manufacture method thereof |
| CN103872252A (en) * | 2012-12-11 | 2014-06-18 | 株式会社半导体能源研究所 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device |
| CN104183764A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Inverted organic light emission diode, preparation method thereof, display screen and terminal |
| CN110277511A (en) * | 2018-01-19 | 2019-09-24 | 武汉华美晨曦光电有限责任公司 | A kind of OLED device and its processing method of included external cabling |
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2003
- 2003-10-13 CN CNA200310101239XA patent/CN1498047A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7619358B2 (en) | 2004-08-20 | 2009-11-17 | Panasonic Corp. | Dispersion-type EL device and illuminated switch unit using the same |
| CN103165816A (en) * | 2011-12-14 | 2013-06-19 | 海洋王照明科技股份有限公司 | Inverted top emission organic light emission diode and manufacture method thereof |
| CN103872252A (en) * | 2012-12-11 | 2014-06-18 | 株式会社半导体能源研究所 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device |
| CN104183764A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Inverted organic light emission diode, preparation method thereof, display screen and terminal |
| CN110277511A (en) * | 2018-01-19 | 2019-09-24 | 武汉华美晨曦光电有限责任公司 | A kind of OLED device and its processing method of included external cabling |
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